CN109065216A - A kind of MWT crystal silicon cell grout slurry and preparation method thereof - Google Patents
A kind of MWT crystal silicon cell grout slurry and preparation method thereof Download PDFInfo
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- CN109065216A CN109065216A CN201810881915.6A CN201810881915A CN109065216A CN 109065216 A CN109065216 A CN 109065216A CN 201810881915 A CN201810881915 A CN 201810881915A CN 109065216 A CN109065216 A CN 109065216A
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- crystal silicon
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- 239000011440 grout Substances 0.000 title claims abstract description 38
- 239000002002 slurry Substances 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000007613 slurry method Methods 0.000 title abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 26
- 239000011230 binding agent Substances 0.000 claims abstract description 23
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000003085 diluting agent Substances 0.000 claims abstract description 15
- 239000003112 inhibitor Substances 0.000 claims abstract description 14
- 238000007665 sagging Methods 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 4
- 238000005303 weighing Methods 0.000 claims abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004952 Polyamide Substances 0.000 claims description 8
- 229920002647 polyamide Polymers 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical group CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 6
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229920005749 polyurethane resin Polymers 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- WHFKYDMBUMLWDA-UHFFFAOYSA-N 2-phenoxyethyl acetate Chemical compound CC(=O)OCCOC1=CC=CC=C1 WHFKYDMBUMLWDA-UHFFFAOYSA-N 0.000 claims description 5
- -1 alcohol ester Chemical class 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 3
- QWWTXMUURQLKOT-UHFFFAOYSA-N 1-phenoxypropan-2-yl acetate Chemical compound CC(=O)OC(C)COC1=CC=CC=C1 QWWTXMUURQLKOT-UHFFFAOYSA-N 0.000 claims description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000005331 crown glasses (windows) Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
Abstract
The present invention relates to a kind of MWT crystal silicon cell grout slurries and preparation method thereof.Grout slurry: it is mixed with by silver powder, glass binder, organic bond, auxiliary rheological agents, sagging inhibitor and diluent.Preparation method specifically carries out according to the following steps: one, weighing silver powder, glass binder, organic bond, auxiliary rheological agents, sagging inhibitor and diluent by number；Two, silver powder, glass powder and organic bond are mixed and is ground to uniformly without particle, then stirred evenly after addition auxiliary rheological agents, sagging inhibitor and diluent thereto, that is, complete the preparation of MWT crystal silicon cell grout slurry.A kind of MWT crystal silicon cell grout slurry and preparation method thereof of the invention, grout slurry has preferable rheological characteristic, it is not easily settled, being easy to will be in the perforation of filled therewith to crystal silicon cell, realize that the energy for collecting front passes through battery transfer to cell backside, shading-area is reduced, the purpose of battery conversion efficiency is improved.
Description
Technical field
The present invention relates to MWT battery fields, more particularly to a kind of MWT crystal silicon cell grout slurry and its preparation side
Method.
Background technique
MWT battery is the letter of metal piercing winding (metallization wrap-through, MWT) silicon solar cell
Claim, the technical application p-type polysilicon, the back of battery transfer to battery is passed through by the energy that laser drill collects battery front side
Face.To replace the grid line of conventional crystalline silicon battery front side, shading-area is greatly reduced, the delivery efficiency of battery is improved.
The approach at the back side that the energy through hole that battery front side is collected is transferred to battery is that metal electrode is filled in hole, the resistance of electrode
Rate is the smaller the better, and method is exactly to use silver paste filling perforation, forms electrode after sintering；And existing grout slurry, rheological property
It is bad, it is easily settled, so that being not easy to cause certain be stranded to production in the perforation of filled therewith to crystal silicon cell when grout
It is difficult.
Summary of the invention
The present invention provides a kind of MWT crystal silicon cell grout slurry and preparation method thereof, grout slurry has preferable
Rheological characteristic, it is and not easily settled, it is easy to by the perforation of filled therewith to crystal silicon cell, to collect front to realize
Energy passes through battery transfer to cell backside, reduces shading-area, improves the purpose of battery conversion efficiency.
A kind of MWT crystal silicon cell grout slurry, it by every 100 parts of mass fraction by 50-80 parts silver powder, 2-6 parts
Glass binder, 10-30 parts of organic bond, 0.2-1 parts of auxiliary rheological agents, 0.2-1 parts of sagging inhibitor and 4-16 parts
Diluent be mixed with.
The viscosity of the grout slurry is 10-70Pa.s.
The silver powder is flake silver powder, and particle size is 0.3-3.0 μm.
The particle size of the silver powder is 0.8-2.0 μm.
The particle size of the glass binder is 0.5-3.0 μm.
The glass binder by itself mass percent by 20-30% ZnO, 16-20% B2O3, 4-6%
SiO2, 2-4% ZrO2And the Bi of surplus2O3It is mixed with.
The organic bond is by the mass percent of itself by the polyamide of 8-12%, the polyurethane tree of 3-7%
The solvent of rouge, the PVB of 3-7% and surplus is prepared.
The solvent is butyl carbitol, ethylene glycol phenyl ether acetate, propylene glycol phenyl ether acetate, ethylene glycol monobutyl ether vinegar
One of acid esters and alcohol ester 12 or in which several mixtures combined in any proportion.
The auxiliary rheological agents are high molecular weight urea-modified polyamide solution.
The diluent be butyl carbitol, butyl carbitol acetate, propylene glycol methyl ether acetate, ethylene glycol ethyl ether,
One of ethylene glycol monomethyl ether acetate, petroleum ether and cyclohexanone or in which several mixtures combined in any proportion.
A kind of preparation method of MWT crystal silicon cell grout slurry, specifically carries out: according to the following steps one, by part
Number weighs silver powder, glass binder, organic bond, auxiliary rheological agents, sagging inhibitor and diluent；Two, by silver powder, glass powder and
Organic bond is mixed and is ground to uniformly without particle, then thereto after addition auxiliary rheological agents, sagging inhibitor and diluent, stirring
Uniformly, that is, the preparation of MWT crystal silicon cell grout slurry is completed.
Glass binder described in step 1 by itself mass percent by 20-30% ZnO, 16-20%
B203, 4-6% SiO2, 2-4% ZrO2And the Bi of surplus2O3It is mixed with, preparation method are as follows: claim in proportion
It takes and is uniformly mixed after each component, heated at 900-1200 DEG C, and keep the temperature 30-60 minutes, then after being quenched, be milled to 0.5-3 μm, mistake
200-400 mesh completes the preparation of glass binder.
Polyamide, 3-7% of the organic bond described in step 1 by the mass percent of itself by 8-12%
Polyurethane resin, the PVB of 3-7% and the solvent of surplus be mixed with, preparation method are as follows: weigh each component in proportion
After mix, be heated to 90-120 DEG C, and be stirred well to be completely dissolved after obtain pale yellow transparent organic bond.
Advantages of the present invention: a kind of MWT crystal silicon cell grout slurry and preparation method thereof of the invention, grout slurry
It is easily settled with preferable rheological characteristic, and not, it is easy to by the perforation of filled therewith to crystal silicon cell, so that realizing will just
The energy that face is collected passes through battery transfer to cell backside, reduces shading-area, improves the purpose of battery conversion efficiency.
Specific embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment, the invention will be described in further detail, the reality
It applies example for explaining only the invention, protection scope of the present invention is not constituted and limited.
Embodiment one
A kind of MWT crystal silicon cell grout slurry is present embodiments provided, it is by every 100 parts of mass fraction by 80 parts
Silver powder, 2 parts of glass binder, 10 parts of organic bond, 0.2 part of auxiliary rheological agents, 0.2 part of sagging inhibitor and 7.6 parts
Diluent be mixed with；Wherein, the glass binder is by 0.40 part of ZnO, 0.32 part of B2O3, 0.12 part
SiO2, 0.06 part of ZrO2And 1.10 parts of Bi2O3It is mixed with；The organic bond is by 0.8 part of polyamide
Resin, 0.3 part of polyurethane resin, 0.3 part of PVB, 6.6 parts of butyl carbitol, 1.0 parts of ethylene glycol phenyl ether acetate,
1.0 parts of alcohol ester 12 is mixed with.
Embodiment two
A kind of MWT crystal silicon cell grout slurry is present embodiments provided, it is by every 100 parts of mass fraction by 70 parts
Silver powder, 3 parts of glass binder, 22 parts of organic bond, 0.2 part of auxiliary rheological agents, 0.8 part of sagging inhibitor and 4 parts
Diluent is mixed with；Wherein, the glass binder is by 0.75 part of ZnO, 0.54 part of B2O3, 0.12 part of SiO2、
0.09 part of ZrO2And 1.50 parts of Bi2O3It is mixed with；The organic bond by 2.2 parts polyamide,
1.1 parts of polyurethane resin, 1.1 parts of PVB, 17.6 parts of ethylene glycol phenyl ether acetate are mixed with.
Embodiment three
A kind of MWT crystal silicon cell grout slurry is present embodiments provided, it is by every 100 parts of mass fraction by 65 parts
Silver powder, 4 parts of glass binder, 20 parts of organic bond, 0.6 part of auxiliary rheological agents, 0.6 part of sagging inhibitor and 9.8 parts
Diluent be mixed with；Wherein, the glass binder is by 1.00 parts of ZnO, 0.80 part of B2O3, 0.24 part
SiO2, 0.16 part of ZrO2And 1.80 parts of Bi2O3It is mixed with；The organic bond is by 2.2 parts of polyamide
Resin, 0.8 part of polyurethane resin, 0.8 part of PVB, 4.2 parts of butyl carbitol, 12 parts of alcohol ester 12 be mixed with and
At.
Example IV
A kind of MWT crystal silicon cell grout slurry is present embodiments provided, it is by every 100 parts of mass fraction by 50 parts
Silver powder, 6 parts of glass binder, 30 parts of organic bond, 1 part of auxiliary rheological agents, 1 part of sagging inhibitor and 12 parts of dilution
Agent is mixed with；Wherein, the glass binder is by 1.80 parts of ZnO, 1.02 parts of B2O3, 0.24 part of SiO2、0.24
The ZrO of part2And 2.70 parts of Bi2O3It is mixed with；The organic bond by 3.6 parts polyamide, 2.1 parts
Polyurethane resin, 2.1 parts of PVB, 16.2 parts of butyl carbitol, 3.0 parts of ethylene glycol phenyl ether acetate, 3.0 parts of alcohol
Ester 12 is mixed with.
The preparation method of the MWT crystal silicon cell grout slurry of above-described embodiment:
A, the preparation of glass binder weighs each component by number, and load weighted above-mentioned raw materials are uniformly mixed and are placed on height
Warm resistance stove heating, temperature controlling range: 900-1200 DEG C, soaking time: 30-60 minutes, by the glass powder after fusing
After grain is using deionized water quenching, it is milled to 0.5-3 μm, is sieved to obtain crown glass binder through 200-400 mesh spare；
B, the preparation of organic bond weighs each component by number, is heated to 90-120 DEG C after mixing, has been stirred well to
Pale yellow transparent organic bond is made after fully dissolved；
C, prepared by glass binder, 0.3-3.0 μm of average particle size range of flake silver powder, the step B prepared step A
When organic bond is fully ground to appearance exquisiteness, uniformly without particle, auxiliary rheological agents, sagging inhibitor and diluent stirring are added
Uniformly, that is, the preparation of grout slurry is completed.
The detail of each embodiment dosage of each component and test result is as follows shown in table.
Thus obtained grout slurry has preferable rheological characteristic, and not easily settled, and the technique that grout can be used will starch
Material is filled into the perforation of crystal silicon cell, to realize that the energy for collecting front passes through battery transfer to cell backside, is subtracted
Few shading-area, improves the purpose of battery conversion efficiency.
Above-described embodiment should not in any way limit the present invention, all to be obtained by the way of equivalent replacement or equivalency transform
Technical solution fall within the scope of protection of the present invention.
Claims (10)
1. a kind of MWT crystal silicon cell grout slurry, it is characterised in that: it is by every 100 parts of mass fraction by 50-80 parts of silver
Powder, 2-6 parts of glass binder, 10-30 parts of organic bond, 0.2-1 parts of auxiliary rheological agents, 0.2-1 parts of sagging inhibitor
Diluent with 4-16 parts is mixed with.
2. a kind of MWT crystal silicon cell grout slurry according to claim 1, it is characterised in that: the grout slurry
Viscosity be 10-70Pa.s.
3. a kind of MWT crystal silicon cell grout slurry according to claim 1, it is characterised in that: the glassy bond
Agent by itself mass percent by 20-30% ZnO, 16-20% B2O3, 4-6% SiO2, 2-4% ZrO2And
The Bi of surplus2O3It is mixed with.
4. a kind of MWT crystal silicon cell grout slurry according to claim 1, it is characterised in that: the organic
Agent is by the mass percent of itself by the polyamide of 8-12%, the polyurethane resin of 3-7%, the PVB of 3-7% and surplus
Solvent is prepared.
5. a kind of MWT crystal silicon cell grout slurry according to claim 1, it is characterised in that: the solvent is fourth
One in base carbitol, ethylene glycol phenyl ether acetate, propylene glycol phenyl ether acetate, ethylene glycol monomethyl ether acetate and alcohol ester 12
Kind or in which several mixtures combined in any proportion.
6. a kind of MWT crystal silicon cell grout slurry according to claim 1, it is characterised in that: the auxiliary rheological agents
For high molecular weight urea-modified polyamide solution.
7. a kind of MWT crystal silicon cell grout slurry according to claim 1, it is characterised in that: the diluent is
Butyl carbitol, butyl carbitol acetate, propylene glycol methyl ether acetate, ethylene glycol ethyl ether, ethylene glycol monomethyl ether acetate, stone
One of oily ether and cyclohexanone or in which several mixtures combined in any proportion.
8. preparing a kind of method of MWT crystal silicon cell grout slurry as described in claim 1, it is characterised in that: preparation
What method specifically carried out according to the following steps: one, by number weigh silver powder, glass binder, organic bond, auxiliary rheological agents,
Sagging inhibitor and diluent；Two, silver powder, glass powder and organic bond are mixed and is ground to uniformly without particle, then thereto
It after auxiliary rheological agents, sagging inhibitor and diluent is added, stirs evenly, that is, completes the preparation of MWT crystal silicon cell grout slurry.
9. a kind of preparation method of MWT crystal silicon cell grout slurry according to claim 8, it is characterised in that: step
Glass binder described in rapid one by itself mass percent by 20-30% ZnO, 16-20% B2O3, 4-6%
SiO2, 2-4% ZrO2And the Bi of surplus2O3It is mixed with, preparation method are as follows: mixed after weighing each component in proportion
It closes uniformly, is heated at 900-1200 DEG C, and keep the temperature 30-60 minute, then after being quenched, be milled to 0.5-3 μm, mistake 200-400 mesh,
Complete the preparation of glass binder.
10. a kind of preparation method of MWT crystal silicon cell grout slurry according to claim 8, it is characterised in that: step
Organic bond described in rapid one is by the mass percent of itself by the polyamide of 8-12%, the polyurethane tree of 3-7%
The solvent of rouge, the PVB of 3-7% and surplus is mixed with, preparation method are as follows: is mixed, is added after weighing each component in proportion
Heat to 90-120 DEG C, and be stirred well to be completely dissolved after obtain pale yellow transparent organic bond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810881915.6A CN109065216A (en) | 2018-08-03 | 2018-08-03 | A kind of MWT crystal silicon cell grout slurry and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810881915.6A CN109065216A (en) | 2018-08-03 | 2018-08-03 | A kind of MWT crystal silicon cell grout slurry and preparation method thereof |
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| CN109065216A true CN109065216A (en) | 2018-12-21 |
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| CN201810881915.6A Pending CN109065216A (en) | 2018-08-03 | 2018-08-03 | A kind of MWT crystal silicon cell grout slurry and preparation method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103415892A (en) * | 2011-03-15 | 2013-11-27 | E.I.内穆尔杜邦公司 | Conductive metal paste for a metal-wrap-through silicon solar cell |
| CN105164761A (en) * | 2012-12-28 | 2015-12-16 | 赫劳斯德国有限两和公司 | An electro-conductive paste comprising an inorganic reaction system with a high glass transition temperature in the preparation of electrodes in MWT solar cells |
-
2018
- 2018-08-03 CN CN201810881915.6A patent/CN109065216A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103415892A (en) * | 2011-03-15 | 2013-11-27 | E.I.内穆尔杜邦公司 | Conductive metal paste for a metal-wrap-through silicon solar cell |
| CN105164761A (en) * | 2012-12-28 | 2015-12-16 | 赫劳斯德国有限两和公司 | An electro-conductive paste comprising an inorganic reaction system with a high glass transition temperature in the preparation of electrodes in MWT solar cells |
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Application publication date: 20181221 |