CN109062312B - Single-fire electricity taking chip and implementation method thereof - Google Patents
Single-fire electricity taking chip and implementation method thereof Download PDFInfo
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- CN109062312B CN109062312B CN201811105782.XA CN201811105782A CN109062312B CN 109062312 B CN109062312 B CN 109062312B CN 201811105782 A CN201811105782 A CN 201811105782A CN 109062312 B CN109062312 B CN 109062312B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a single-fire power taking chip and an implementation method thereof, wherein the power taking chip comprises a chip input end Vin, a chip reference ground GND, an output voltage feedback pin FB and a chip driving output signal OUT, wherein the Vin pin is connected with the input end of an overvoltage protection circuit; the invention realizes the single live wire electricity taking function through the low material cost of few peripheral circuits, and simultaneously has various protection mechanisms such as input/output overvoltage protection, over-temperature protection and the like, so that the single live wire electricity taking application is safer and more reliable.
Description
Technical Field
The invention belongs to the technical field of semiconductor chips, and particularly relates to a power taking chip of a single live wire system, and particularly relates to a single-fire power taking chip and an implementation method thereof.
Background
With the continuous development of wireless communication technology and intelligent home industry, more and more wireless intelligent switch products replace the original traditional 86 mechanical switch to be applied to the daily life of people, so that the single-live-wire power taking technology is more and more. At present, most of mainstream single-fire power taking in the market supplies power for a touch IC or a 433MHZ radio frequency module and the like, and the scheme driving capability is weak. Or a circuit is built by adopting discrete components, so that the defects of insufficient failure protection capability, poor output consistency and the like exist.
Most of the switch 86 boxes in the household are not provided with zero lines, and the traditional linear or switching power supply cannot meet the power taking requirement. The existing single-fire power supply scheme on the market mainly has the following problems: 1) Only small output currents, such as hundreds of microamps to a few milliamperes, can be provided, and the zigbee chip needs 30-40 milliamperes of driving current when receiving and transmitting data; 2) The circuit is built by adopting the discrete devices of the comparator, although the carrying capacity is enhanced, the system consistency is poor due to a certain precision error of the component parameters of the discrete devices, and the whole system is crashed once one of the components is lost or fails. 3) There are also some schemes for packaging into a chip to realize single-fire power taking, but the scheme has more peripheral circuits, particularly needs 2 low-voltage power MOS tubes, so that the whole system has higher cost, occupies larger PCB space, and is difficult to meet the application occasion with higher size space requirement.
In the existing scheme, the chip can stably output direct current, but 2 high-power MOS (metal oxide semiconductor) tubes are required to be controlled, so that the system cost is high, and a large size space is required.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a single-fire power taking chip and a realization method thereof.
In order to solve the technical problems, the invention provides a single-fire power taking chip, which comprises a chip input end Vin, a chip reference ground GND, an output voltage feedback pin FB and a chip driving output signal OUT, wherein the chip input end Vin is connected with the input end of an overvoltage protection circuit, the chip input end Vin is also connected with the output end of a regulator, the output end of the overvoltage protection circuit is connected with the input end of a logic OR gate, the logic OR gate is also respectively connected with the output ends of an over-temperature protection circuit and a comparator, the output end of the logic OR gate is connected with the input end of a totem pole output circuit, the non-inverting input end of the comparator is connected with the output voltage feedback pin FB, the inverting input end of the comparator is connected with a reference voltage Vref, and the output end of the totem pole output circuit drives an external MOS tube through the chip driving output signal OUT; the power taking chip further comprises a power supply circuit, and the power supply circuit provides stable working voltage for other module circuits in the power taking chip.
The technical scheme of the invention is as follows:
the regulator takes the chip input end Vin of the power taking chip as output to obtain a specific base reference voltage Vref as an input signal of the comparator.
The temperature inside the chip is collected by the built-in NTC temperature sampling resistor of the over-temperature protection circuit.
The comparator is a chip output voltage sampling comparator.
The totem pole output circuit is a driving circuit of an external MOS tube.
The overvoltage protection circuit comprises an overvoltage latch, and the output end of the overvoltage latch is connected with the input end of the logic OR gate.
Further, the invention also provides a method for realizing the single-fire power taking chip, which comprises the following specific steps:
the regulator takes the Vin pin as output to obtain a specific reference voltage Vref as an input signal of the comparator;
the overvoltage protection circuit acquires input voltage through a Vin pin through a high-precision voltage stabilizing tube and a high-precision sampling resistor, and if the input voltage Vin exceeds an overvoltage protection threshold value, an overvoltage latch in the overvoltage protection circuit outputs high level to a logic OR gate in the power taking chip;
an NTC temperature sampling resistor is arranged in the over-temperature protection circuit to collect the internal temperature of the chip, and if the internal temperature exceeds the over-temperature protection threshold value when the power-taking chip works, a high-level signal is output to a logic OR gate;
the comparator is a sampling comparator for outputting voltage of the power taking chip, the FB pin is connected with the in-phase input end of the comparator, the base reference voltage Vref is connected with the inverting input end of the comparator, if the voltage of the FB pin is larger than Vref, the comparator judges to output overvoltage, and at the moment, the comparator outputs high level as an input signal of the logic OR gate;
the logical OR gate has 3 input signals, respectively: the output signal of the overvoltage latch, the output signal of the over-temperature protection circuit and the output signal of the comparator, and the output signal of the logic OR gate is the input signal of the totem-pole output circuit;
the power supply circuit is a voltage-stabilizing power supply module of the chip and provides stable working voltage for other module circuits in the chip;
the totem pole output circuit is a driving circuit of the external MOS tube, the output of the logic OR gate is used as the input signal of the totem pole output circuit, and the external MOS tube is driven through the OUT pin after amplification.
The beneficial effects of the invention are as follows:
the invention provides a method for realizing a single-fire power-taking chip, which uses fewer peripheral circuits to realize that a single fire wire obtains stable direct-current voltage. The power taking chip has small standby power consumption, stable and reliable output voltage and reliability far higher than that of some circuit schemes built by discrete components. The chip is internally provided with protection mechanisms such as input/output overvoltage protection, over-temperature protection and the like, and can be suitable for various single-fire electricity taking application occasions. The peripheral circuit is simple, the system cost is low, the required space size is smaller, and the applicability is far higher than other schemes on the market.
Drawings
FIG. 1 is a schematic circuit diagram of the present invention;
the device comprises a 1-regulator, a 2-overvoltage protection circuit, a 3-overtemperature protection circuit, a 4-comparator, a 5-logic OR gate, a 6-power supply circuit and a 7-totem pole output circuit.
Detailed Description
The invention is further illustrated by the following detailed description, in which:
the overvoltage protection circuit adopts a voltage stabilizing tube and a voltage reference circuit;
the over-temperature protection circuit consists of an NTC resistor and a pull-up resistor;
the comparator adopts the design of TI company LM321 datasheet 'SNOS 935B-FEBRUARY 2001-REVISED MARCH 2013';
the power supply circuit adopts a linear stabilized voltage power supply, and can refer to LP3869x-3.3V of TI.
Example 1
The embodiment provides a single-fire power taking chip, the structure of which is shown in fig. 1, wherein the power taking chip comprises a chip input end Vin, a chip reference ground GND, an output voltage feedback pin FB and a chip driving output signal OUT, the chip input end Vin is connected with the input end of an overvoltage protection circuit 2, the chip input end Vin is also connected with the output end of a regulator 1, the output end of the overvoltage protection circuit 2 is connected with the input end of a logic OR gate 5, meanwhile, the logic OR gate 5 is also respectively connected with the output ends of an over-temperature protection circuit 3 and a comparator 4, the output end of the logic OR gate 5 is connected with the input end of a totem pole output circuit 7, the in-phase input end of the comparator 4 is connected with the output voltage feedback pin FB, the inverting input end of the comparator 4 is connected with a reference voltage Vref, and the output end of the totem pole output circuit 7 drives an external MOS tube through the chip driving output signal OUT; the power taking chip further comprises a power supply circuit 6, and the power supply circuit 6 provides stable working voltage for other module circuits in the power taking chip.
The regulator 1 takes the chip input Vin of the power taking chip as output to obtain a specific reference voltage Vref as an input signal of the comparator 4. The over-temperature protection circuit 3 is internally provided with an NTC temperature sampling resistor for collecting the internal temperature of the chip. The comparator 4 is a chip output voltage sampling comparator. The totem pole output circuit 7 is a driving circuit of an external MOS transistor, and includes. The overvoltage protection circuit 2 includes an overvoltage latch, and an output terminal of the overvoltage latch is connected to an input terminal of the logic or gate 5.
The single-fire power-taking chip provided by the embodiment comprises 4 main pins which are an input end Vin of the chip, a ground GND of the chip, an output voltage feedback pin FB and a chip driving output signal OUT. The chip is mainly divided into the following functional circuits: regulator 1, overvoltage protection circuit 2, overtemperature protection circuit 3, comparator 4, logic or gate 5, power supply circuit 6, totem pole output circuit 7. The regulator 1 takes the Vin pin of the chip as output to obtain a specific reference voltage Vref as one input signal of the comparator 4; the overvoltage protection circuit 2 collects input voltage Vin through a high-precision voltage stabilizing tube and a high-precision sampling resistor, and if the input voltage Vin exceeds an overvoltage protection threshold value, an overvoltage latch in the protection circuit outputs high level to a logic OR gate 5 in the chip; the over-temperature protection circuit 3 is internally provided with an NTC temperature sampling resistor for collecting the internal temperature of the chip, and if the internal temperature exceeds the over-temperature protection threshold value during the operation of the chip, a high-level signal is output to the logic OR gate 5; the comparator 4 is a chip output voltage sampling comparator, the chip FB pin is connected with the in-phase input end of the comparator 4, the internal reference voltage reference source Vref is connected with the inverting input end of the comparator 4, if the FB voltage is larger than Vref, the output overvoltage is judged, and at the moment, the comparator outputs a high level as an input signal of the logic OR gate 5; the logical or gate 5 has 3 input signals, respectively: the output signal of the overvoltage latch 2, the output signal of the over-temperature protection 3 and the output signal of the comparator 4 are input signals of the totem pole output circuit 7; the power supply circuit 6 is a voltage-stabilizing power supply module of the chip and provides stable working voltage for other module circuits in the chip; the totem pole output circuit 7 is a driving circuit of an external MOS tube, and can enhance the output driving capability of the chip. The output of the logic OR gate 5 is used as the input signal of the circuit, and the external MOS tube is driven by the chip OUT pin after amplification.
Example 2
The embodiment provides a method for realizing a single-fire power-taking chip, which comprises the following specific steps:
the regulator 1 takes the Vin pin as output to obtain a specific base reference voltage Vref as one input signal of the comparator 4;
the overvoltage protection circuit 2 acquires input voltage through a Vin pin through a high-precision voltage stabilizing tube and a high-precision sampling resistor, and if the input voltage Vin exceeds an overvoltage protection threshold value, an overvoltage latch in the overvoltage protection circuit 2 outputs high level to a logic OR gate 5 in a power taking chip;
the temperature inside the chip is collected by the built-in NTC temperature sampling resistor of the over-temperature protection circuit 3, and if the inside exceeds the over-temperature protection threshold value when the power-taking chip works, a high-level signal is output to the logic OR gate 5;
the comparator 4 is a sampling comparator for outputting voltage from the power taking chip, the FB pin is connected with the in-phase input end of the comparator 4, the reference voltage Vref is connected with the inverting input end of the comparator 4, if the voltage of the FB pin is larger than Vref, the output overvoltage is judged, and at the moment, the comparator 4 outputs high level as an input signal of the logic OR gate 5;
the logical or gate 5 has 3 input signals, respectively: the output signal of the overvoltage latch, the output signal of the over-temperature protection circuit 3 and the output signal of the comparator 4, and the output signal of the logic OR gate 5 is the input signal of the totem pole output circuit 7;
the power supply circuit 6 is a voltage-stabilizing power supply module of the chip and provides stable working voltage for other module circuits in the chip;
the totem pole output circuit 7 is a driving circuit of an external MOS tube, and the output of the logic OR gate 5 is used as an input signal of the totem pole output circuit 7, and the external MOS tube is driven through an OUT pin after amplification.
The embodiment provides a method for realizing a single-fire power-taking chip, which uses fewer peripheral circuits to realize that a single fire wire obtains stable direct-current voltage. The power taking chip has small standby power consumption, stable and reliable output voltage and reliability far higher than that of some circuit schemes built by discrete components. The chip is internally provided with protection mechanisms such as input/output overvoltage protection, over-temperature protection and the like, and can be suitable for various single-fire electricity taking application occasions. The peripheral circuit is simple, the system cost is low, the required space size is smaller, and the applicability is far higher than other schemes on the market.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereto, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the present invention.
Claims (6)
1. The implementation method of the single-fire power taking chip is characterized in that the power taking chip comprises a chip input end Vin, a chip reference ground GND, an output voltage feedback pin FB and a chip driving output signal OUT, wherein the Vin pin is connected with the input end of an overvoltage protection circuit (2), the Vin pin is also connected with the output end of a regulator (1), the output end of the overvoltage protection circuit (2) is connected with the input end of a logic OR gate (5), meanwhile, the logic OR gate (5) is also respectively connected with an over-temperature protection circuit (3) and the output end of a comparator (4), the output end of the logic OR gate (5) is connected with the input end of a totem-pole output circuit (7), the in-phase input end of the comparator (4) is connected with the FB pin, the inverting input end of the comparator (4) is connected with a reference voltage Vref, and the output end of the totem-pole output circuit (7) drives an external MOS tube through the OUT pin; the power taking chip further comprises a power supply circuit (6), and the power supply circuit (6) provides stable working voltage for other module circuits in the power taking chip;
the method comprises the following specific steps:
the regulator (1) takes a Vin pin as output to obtain a base reference voltage Vref as an input signal of the comparator (4);
the overvoltage protection circuit (2) acquires input voltage through a Vin pin through a high-precision voltage stabilizing tube and a high-precision sampling resistor, and if the input voltage Vin exceeds an overvoltage protection threshold value, an overvoltage latch in the overvoltage protection circuit (2) outputs high level to a logic OR gate (5) in the power taking chip;
an NTC temperature sampling resistor is arranged in the over-temperature protection circuit (3) to collect the internal temperature of the chip, and if the internal temperature exceeds an over-temperature protection threshold value when the power taking chip works, a high-level signal is output to a logic OR gate (5);
the comparator (4) is a sampling comparator for outputting voltage by the power taking chip, the FB pin is connected with the in-phase input end of the comparator (4), the reference voltage Vref is connected with the inverting input end of the comparator (4), if the voltage of the FB pin is larger than Vref, the output overvoltage is judged, and at the moment, the comparator (4) outputs high level to be used as an input signal of the logic OR gate (5);
the logical OR gate (5) has 3 input signals, respectively: the output signal of the overvoltage latch, the output signal of the over-temperature protection circuit (3) and the output signal of the comparator (4), wherein the output signal of the logic OR gate (5) is the input signal of the totem-pole output circuit (7);
the power supply circuit (6) is a voltage-stabilizing power supply module of the chip and provides stable working voltage for other module circuits in the chip;
the totem pole output circuit (7) is a driving circuit of an external MOS tube, and the output of the logic OR gate (5) is used as an input signal of the totem pole output circuit (7), and the external MOS tube is driven through an OUT pin after amplification.
2. The method according to claim 1, wherein the regulator (1) takes Vin pin of the power taking chip as output to obtain a reference voltage Vref as an input signal of the comparator (4).
3. The method for realizing the single-fire power-taking chip according to claim 1, wherein the over-temperature protection circuit (3) is internally provided with an NTC temperature sampling resistor for acquiring the internal temperature of the chip.
4. The method for implementing the single-fire power-taking chip according to claim 1, wherein the comparator (4) is a chip output voltage sampling comparator.
5. The method for realizing the single-fire power-taking chip according to claim 1, wherein the totem-pole output circuit (7) is a driving circuit of an external MOS tube.
6. The method for realizing the single-fire power-taking chip according to claim 1, wherein the overvoltage protection circuit (2) comprises an overvoltage latch, and an output end of the overvoltage latch is connected with an input end of a logic or gate (5).
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| CN201811105782.XA CN109062312B (en) | 2018-09-21 | 2018-09-21 | Single-fire electricity taking chip and implementation method thereof |
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| CN201811105782.XA CN109062312B (en) | 2018-09-21 | 2018-09-21 | Single-fire electricity taking chip and implementation method thereof |
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| CN109062312B true CN109062312B (en) | 2023-04-25 |
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| CN110854976A (en) * | 2019-12-16 | 2020-02-28 | 河北工大科雅能源科技股份有限公司 | Single-fire power supply circuit |
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| US20030063900A1 (en) * | 2001-12-13 | 2003-04-03 | Carter Group, Inc. | Linear electric motor controller and system for providing linear speed control |
| DE102004025909A1 (en) * | 2004-05-27 | 2005-12-22 | Infineon Technologies Ag | Constant current supply for such as LED lights on an automobile has a fault detection circuit to provide status data |
| WO2008042230A2 (en) * | 2006-09-28 | 2008-04-10 | Holosonic Research Labs. Inc. | Capacitive load driving device |
| CN202514136U (en) * | 2012-03-30 | 2012-10-31 | 南京冠亚电源设备有限公司 | Light emitting diode (LED) driving chip capable of dimming and driving circuit |
| US9007041B2 (en) * | 2012-12-04 | 2015-04-14 | Green Solution Technology Co., Ltd. | Controller for protectively reducing an output of a converting circuit |
| CN203279284U (en) * | 2013-05-20 | 2013-11-06 | 贵州恩纬西光电科技发展有限公司 | LED lighting power supply drive chip |
| CN107666306A (en) * | 2016-07-28 | 2018-02-06 | 深圳指芯智能科技有限公司 | A kind of single live wire power getting intelligent switch based on fingerprint identification technology |
| CN106292821B (en) * | 2016-09-23 | 2018-04-17 | 南京物联传感技术有限公司 | A kind of single live wire power getting chip |
| CN206237638U (en) * | 2016-11-17 | 2017-06-09 | 重庆市嘉凌新科技有限公司 | A kind of LED drive chip |
| CN206235909U (en) * | 2016-12-12 | 2017-06-09 | 重庆市嘉凌新科技有限公司 | A kind of power drives chip |
| CN208673178U (en) * | 2018-09-21 | 2019-03-29 | 南京荟学智能科技有限公司 | It is a kind of list fire take electrical chip |
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