CN109061529A - A method of measurement organic semi-conductor organo-magnetoresistive - Google Patents
A method of measurement organic semi-conductor organo-magnetoresistive Download PDFInfo
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- CN109061529A CN109061529A CN201810684175.7A CN201810684175A CN109061529A CN 109061529 A CN109061529 A CN 109061529A CN 201810684175 A CN201810684175 A CN 201810684175A CN 109061529 A CN109061529 A CN 109061529A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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Abstract
The invention discloses a kind of methods for measuring organic semi-conductor organo-magnetoresistive, comprising: measures first electric conductivity value of organic semiconductor in the environment of no externally-applied magnetic field；Measure second electric conductivity value of organic semiconductor in the environment of having externally-applied magnetic field；The organo-magnetoresistive is acquired according to the first electric conductivity value and the second electric conductivity value.Method disclosed by the invention can simply, accurately obtain the magnetic resistance of different organic semiconducting materials, and then available different organic materials device is in different temperatures, different electric field strengths, organo-magnetoresistive effect under magnetic field and carrier concentration provides a kind of physical method of universality to study the microphysics mechanism of different types of organo-magnetoresistive device.
Description
Technical field
The present invention relates to organic semiconductor fields, and in particular to a method of measurement organic semi-conductor organo-magnetoresistive.
Background technique
Organic semiconducting materials have many advantages, such as it is flexible, transparent, inexpensive, can large area manufacture, have wide application
Prospect.In past 20 years, organic semiconducting materials achieve huge progress, and the various devices based on organic semiconducting materials are not
It is disconnected to emerge in large numbers, such as Organic Thin Film Transistors, organic solar batteries, organic field effect tube etc..People pass through the study found that
Tremendous influence will be generated to electric current plus small magnetic field in organic semiconductor, this effect is referred to as organo-magnetoresistive.Have
Machine magnetic resistance is the intrinsic effect of one of organic semiconductor, it can show under room temperature or several bold and unconstrained Tesla magnetic fields effects.
In the prior art, in order to characterize and describe organo-magnetoresistive, it will usually using based on exciton to the model side of spin state
Method, trap carry grace model method etc..But these methods are all based on certain characteristics in organic semiconducting materials, as defect,
Polaron trap or exciton all do not have universality to spin state etc..
Therefore, it is necessary to it is a kind of simple and can blanket method characterize organo-magnetoresistive.
Summary of the invention
The present invention is intended to provide a kind of method of simple measurement organic semi-conductor organo-magnetoresistive, to solve to be based on
The certain characteristics of organic semi-conductor, the problem of could describing and characterize organic semi-conductor organo-magnetoresistive.
The embodiment of the present invention provides a kind of method for measuring organic semi-conductor organo-magnetoresistive, comprising:
Measure first electric conductivity value of organic semiconductor in the environment of no externally-applied magnetic field；
Measure second electric conductivity value of organic semiconductor in the environment of having externally-applied magnetic field；And
The organo-magnetoresistive is acquired according to the first electric conductivity value and the second electric conductivity value.
Further, when measuring first electric conductivity value and second electric conductivity value, the organic semiconductor is placed in very
Under empty bad border.
Further, the vacuum degree in the vacuum bad border is at least 1.0 × 10-4Pa。
Further, when measuring second electric conductivity value, the externally-applied magnetic field of application is 1mT-1T.
Further, measuring first electric conductivity value of organic semiconductor in the environment of no externally-applied magnetic field includes:
Using four end in contact methods, first resistor value of organic semiconductor in the environment of no externally-applied magnetic field is measured；And
The first electric conductivity value is obtained according to the first resistor value.
Further, measuring second electric conductivity value of organic semiconductor in the environment of having externally-applied magnetic field includes:
Using four end in contact methods, organic semiconductor is measured in the second resistance value outside plus under magnetic field environment；And
The second electric conductivity value is obtained according to the second resistance value.
Further, the organic semi-conductor organo-magnetoresistive is calculated according to the following formula:
MR=σcon(B=0)/σcon(B)-1
Wherein, MR indicates the size of organo-magnetoresistive, σcon(B=0) indicate that organic semiconductor is surveyed under no externally-applied magnetic field environment
The electric conductivity value obtained, σcon(B) electric conductivity value of the organic semiconductor under externally-applied magnetic field B effect is indicated.
According to another aspect of the present invention, the embodiment of the present invention provides a kind of measurement organic semi-conductor organo-magnetoresistive
Method, comprising:
Measure first current value of organic semiconductor in the environment of no externally-applied magnetic field；
Measure second current value of organic semiconductor in the environment of having externally-applied magnetic field；And
The magnetic resistance is acquired according to the first current value and the second current value.
Further, the organic semi-conductor organo-magnetoresistive is calculated according to the following formula:
MR=[I (B)-I (0)]/I (0)；
Wherein, MR indicates the size of magnetic reluctance, and I (0) indicates the current value that organic semiconductor is measured in no externally-applied magnetic field,
I (B) indicates current value of the organic semiconductor under externally-applied magnetic field B effect.
Further, when measuring first current value and second current value, the organic semiconductor is placed in very
Under empty bad border.
Compared with prior art, the invention has the following advantages that
Method disclosed by the invention is easy to operate, can accurately obtain the magnetic resistance of different organic semiconducting materials, into
And available different organic materials device having under different temperatures, different electric field strengths, magnetic field and carrier concentration
Machine magnetoresistance provides a kind of physics side of universality to study the microphysics mechanism of different types of organo-magnetoresistive device
Method.
Detailed description of the invention
By the description made for the present invention of below with reference to attached drawing, other objects and advantages of the present invention will be aobvious and easy
See, and can help that complete understanding of the invention will be obtained.
Fig. 1 is the flow chart of the method for measurement organic semi-conductor organo-magnetoresistive provided in an embodiment of the present invention；
Fig. 2 be another embodiment of the present invention provides measurement organic semi-conductor organo-magnetoresistive method flow chart；
Fig. 3 is the structural representation of the measuring device of measurement organic semi-conductor organo-magnetoresistive provided in an embodiment of the present invention
Figure；
Fig. 4 A-4D is the schematic diagram of the manufacturing process of measuring device provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the attached drawing of the embodiment of the present invention,
Technical solution of the present invention is clearly and completely described.Obviously, described embodiment is an implementation of the invention
Example, instead of all the embodiments.Based on described the embodiment of the present invention, those of ordinary skill in the art are without creating
Property labour under the premise of every other embodiment obtained, shall fall within the protection scope of the present invention.
Unless otherwise defined, the technical term or scientific term that the present invention uses should be tool in fields of the present invention
The ordinary meaning for thering is the personage of general technical ability to be understood.
As shown in Figure 1, the embodiment of the present invention provides a kind of method for measuring organic semi-conductor organo-magnetoresistive, including step
It is rapid:
S1 measures first electric conductivity value of organic semiconductor in the environment of no externally-applied magnetic field.
Specifically, organic semiconductor can be measured by using 6221 type current source measurement device of Keithley without outer
Add the resistance under magnetic field environment, and then is converted to the first electric conductivity value.
In the present embodiment, in order to eliminate the influence of contact resistance and conductor resistance to measurement result, four can be used
Hold-carrying measures organic semi-conductor resistance.
S2 measures second electric conductivity value of organic semiconductor in the environment of having externally-applied magnetic field.
Specifically, organic semiconductor can be measured by using 6221 type current source measurement device of Keithley outside having
Add the resistance under the bad border in magnetic field, and then is converted to the second electric conductivity value.
In the present embodiment, in order to eliminate the influence of contact resistance and conductor resistance to measurement result, four can be used
Hold-carrying measures organic semi-conductor resistance.The size of externally-applied magnetic field can be 1mT-1T, and the direction in magnetic field can be lateral.This
In, laterally refer to that magnetic direction is parallel with the surface of tested organic semiconductor device.
S3 acquires organo-magnetoresistive according to the first electric conductivity value and the second electric conductivity value.
In the present embodiment, organic semi-conductor organo-magnetoresistive can be calculated according to the following formula:
MR=σcon(B=0)/σcon(B) -1 formula one
Wherein, MR indicates the size of organo-magnetoresistive, σcon(B=0) indicate that organic semiconductor is surveyed under no externally-applied magnetic field environment
The electric conductivity value obtained, σcon(B) electric conductivity value of organic semiconductor under the action of an external magnetic field is indicated.
In further preferred embodiment, when measuring the first electric conductivity value and the second electric conductivity value, in order to guarantee the accurate of measurement
Property, organic semiconductor is placed under vacuum bad border, and the vacuum degree in vacuum bad border is at least 1.0 × 10-4Pa。
As shown in Fig. 2, another embodiment of the present invention also provides a kind of method of magnetic resistance for measuring organic semiconducting materials,
Comprising steps of
A1: first current value of measurement organic semiconductor in the environment of no externally-applied magnetic field.
Specifically, organic semiconductor can be measured by using 6221 type current source measurement device of Keithley without outer
Add the electric current under magnetic field environment, and in the present embodiment, in order to eliminate contact resistance and conductor resistance to measurement result
It influences, organic semi-conductor electric current can be measured using four end in contact methods.
A2: second current value of measurement organic semiconductor in the environment of having externally-applied magnetic field.
Specifically, organic semiconductor can be measured by using 6221 type current source measurement device of Keithley outside having
Add the electric current under the bad border in magnetic field, moreover, in the present embodiment, in order to eliminate contact resistance and conductor resistance to measurement result
Influence, can using four end in contact methods measure current value.The size of externally-applied magnetic field can be 1mT-1T, and the direction in magnetic field can be with
It is lateral, the i.e. surface for being oriented parallel to organic semiconductor material in magnetic field.
A3: magnetic resistance is acquired according to the first current value and the second current value.
In the present embodiment, organic semi-conductor magnetic resistance can be calculated according to the following formula:
MR=[I (B)-I (0)]/I (0) formula two
Wherein, MR indicates the size of magnetic reluctance, the current value that I (0) is measured when indicating sample without externally-applied magnetic field, and I (B) is indicated
Current value of the sample under externally-applied magnetic field B effect.
Fig. 3 is a kind of knot of the measuring device 100 of organo-magnetoresistive for measuring organic semiconductor 3 provided in an embodiment of the present invention
Structure schematic diagram.Measuring device 100 includes: dielectric substrate layers 1；First metal gate layers 2, are set to the top of dielectric substrate layers 1；
Organic semiconductor layer 3 is set to the top of the first metal gate layers 2；Second metal gate layers 4, are set to organic semiconductor layer 3
Top；And measuring instrument 5, it is electrically connected between the first metal gate layers 2 and the second metal gate layers 4 by conducting wire.
In the present embodiment, dielectric substrate layers 1 can be Si substrate or glass lined with 200nm thickness SiO2 insulating layer
Bottom, with a thickness of 1mm-10mm.First metal gate layers 2 and the second metal gate layers 4 can be by least one in Pt, Au, Cu, Ag
Kind composition, width is 1mm~2mm, with a thickness of 100nm~500nm.Organic semiconductor layer 3 is the material for needing to measure organo-magnetoresistive
Material, such as Co, Ni, Si, Ge organic semiconductor.In the present embodiment, organic semiconductor layer 3 is organic semiconductor, that is, You Jiban
The substantially lamellar material of conductor layer 3, length can be 1mm~10mm, and width can be 100 μm~1mm, and thickness can be
500nm~1000nm.Measuring instrument 5 may include the measuring instrumentss of voltage source and measurement electric current, voltage etc..
In a further embodiment, organic semiconductor layer 3 may include multilayer organic semiconductor layer.Each layer organic half
The length of conductor layer is 1mm~10mm, and width is 100 μm~1mm.By the way that multi-lager semiconductor layer is arranged, different thickness can be obtained
The semiconductor material of degree, and then the magnetic resistance of the organic material of different-thickness can be measured.
Fig. 4 A-4D is the schematic diagram of the manufacturing process of measuring device 100 provided in an embodiment of the present invention.
As shown in figs. 4 a-4d, the process for making measuring device 100 as shown in Figure 3 is as follows:
Step 1: as shown in Figure 4 A, the first metal gate layers 2 are deposited in dielectric substrate layers 1；
Step 2: as shown in Figure 4 B, transfer organic semiconducting materials to the first metal gate layers 2 form organic semiconductor layer
3；
Step 3: as shown in Figure 4 C, the second metal gate layers 4 are deposited on organic semiconductor layer 3；And
Step 4: as shown in Figure 4 D, being electrically connected between the first metal gate layers 2 and the second metal gate layers 4 by conducting wire
Measuring instrument 5.
Specifically, deposited in dielectric substrate layers 1 in step 1 the first metal gate layers 2 can using electron beam evaporation,
The methods of chemical vapor deposition, pulse laser deposition, atomic layer deposition or magnetron sputtering, the thickness of the first metal gate electrode 2 can
Think 100nm to 500nm.
In step 2, organic semiconducting materials are transferred to the first metal gate layers 2, can using physical connection or
It is the method for chemical vapor deposition, the thickness of organic semiconductor layer 3 can be 500nm~1000nm.Physical connection is that will have
Organic semiconductor layer 3 be connected to the method in the first metal gate layers 2；Chemical vapor deposition is that organic semiconducting materials sink
The method of organic semiconductor layer 3 is formed in product to the first metal gate layers 2.
In step 3, can using with identical method in step S1, the second metal gate layers 4 are deposited to organic half
In conductor layer 3, the thickness of the second metal gate layers 4 can be 100nm to 500nm.
In one particular embodiment of the present invention, it is possible, firstly, to using electron beam evaporation process, thick with 200nm
SiO2On the Si substrate 1 of insulating layer, the Au film of magnetron sputtering 200nm is as the first metal gate layers 2；Then using chemical gas
Organic semiconducting materials are transferred on Au film by phase sedimentation, form organic semiconductor layer 3；Then magnetically controlled sputter method is utilized
The Pt film of 200nm is prepared as the second metal gate layers 4 in the upper surface of organic semiconductor layer 3；Finally by conducting wire first
Measuring instrument 5 is electrically connected between metal gate layers 2 and the second metal gate layers 4, so that measuring device 100 be made.Measuring instrument 5
It such as can be 6221 type current source of Keithley.
After preparing measuring device 100, the resistance value of organic semiconductor layer 3 is measured using measuring instrument 5, and measurement
Resistance value be converted into electric conductivity value；Then measuring device 100 is placed in the B of magnetic field, laterally, i.e., in parallel the direction of magnetic field B is
In the surface of tested organic semiconductor layer 3, the size in magnetic field is 1mT-1T.Under magnetic field B effect, measuring instrument 5 is reused
The resistance value of organic semiconductor layer is measured, and the resistance value of measurement is converted into electric conductivity value, finally by formula one:
MR=σcon(B=0)/σcon(B)-1
Calculate the magnetic resistance value of organic semiconductor layer.In above-mentioned formula one, MR indicates the size of organo-magnetoresistive, σcon(B
=0) electric conductivity value that organic semiconductor measures under no externally-applied magnetic field environment, σ are indicatedcon(B) indicate that organic semiconductor is adding magnetic outside
Electric conductivity value under the B effect of field.
Compared with prior art, the embodiment of the present invention has the advantage that
Embodiment provided by the invention is according to the analysis to Related Research Domain status, and the transition theory based on carrier is simultaneously
Magnetic field-magnetic resistance corresponding relationship under different voltages that Binding experiment measures develops a kind of method for characterizing organo-magnetoresistive, should
Method is easy to operate, can accurately obtain the magnetic resistance of different organic semiconducting materials, and then the available organic material of difference
Organo-magnetoresistive effect of the glassware part under different temperatures, different electric field strengths, magnetic field and carrier concentration is different for research
The microphysics mechanism of the organo-magnetoresistive device of type provides a kind of physical method of universality.
For the embodiment of the present invention, it is also necessary to explanation, in the absence of conflict, the embodiment of the present invention and reality
Applying the feature in example can be combined with each other to obtain new embodiment.
Finally it should be noted that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although reference
Preferred embodiment describes the invention in detail, those skilled in the art should understand that, it can be to of the invention
Technical solution is modified or equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. a kind of method for measuring organic semi-conductor organo-magnetoresistive, comprising:
Measure first electric conductivity value of organic semiconductor in the environment of no externally-applied magnetic field；
Measure second electric conductivity value of organic semiconductor in the environment of having externally-applied magnetic field；And
The organo-magnetoresistive is acquired according to the first electric conductivity value and the second electric conductivity value.
2. the method as described in claim 1, which is characterized in that when measuring first electric conductivity value and second electric conductivity value,
The organic semiconductor is placed under vacuum bad border.
3. method according to claim 2, which is characterized in that the vacuum degree in the vacuum bad border is at least 1.0 × 10-4Pa。
4. the method as described in claim 1, which is characterized in that when measuring second electric conductivity value, the externally-applied magnetic field of application is
1mT-1T。
5. method according to any of claims 1-4, which is characterized in that measure the organic semiconductor in no externally-applied magnetic field
In the environment of the first electric conductivity value include:
Using four end in contact methods, first resistor value of organic semiconductor in the environment of no externally-applied magnetic field is measured；And according to institute
It states first resistor value and obtains the first electric conductivity value.
6. method as claimed in claim 5, which is characterized in that measure the organic semiconductor in the environment of having externally-applied magnetic field
The second electric conductivity value include:
Using four end in contact methods, organic semiconductor is measured in the second resistance value outside plus under magnetic field environment；And
The second electric conductivity value is obtained according to the second resistance value.
7. the method as described in claim 1, which is characterized in that calculate the organic semi-conductor organo-magnetoresistive according to the following formula:
MR=σcon(B=0)/σcon(B)-1
Wherein, MR indicates the size of organo-magnetoresistive, σcon(B=0) indicate what organic semiconductor measured under no externally-applied magnetic field environment
Electric conductivity value, σcon(B) electric conductivity value of the organic semiconductor under externally-applied magnetic field B effect is indicated.
8. a kind of method for measuring organic semi-conductor organo-magnetoresistive, comprising:
Measure first current value of organic semiconductor in the environment of no externally-applied magnetic field；
Measure second current value of organic semiconductor in the environment of having externally-applied magnetic field；And
The magnetic resistance is acquired according to the first current value and the second current value.
9. method according to claim 8, which is characterized in that calculate the organic semi-conductor organo-magnetoresistive according to the following formula:
MR=[I (B)-I (0)]/I (0)；
Wherein, MR indicates the size of magnetic reluctance, and I (0) indicates the current value that organic semiconductor is measured in no externally-applied magnetic field, I (B)
Indicate current value of the organic semiconductor under externally-applied magnetic field B effect.
10. method as claimed in claim 9, which is characterized in that when measuring first current value and second current value,
The organic semiconductor is placed under vacuum bad border.
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| CN1373889A (en) * | 1999-09-14 | 2002-10-09 | 国际商业机器公司 | Ratio method for measurement of MR read head resistance |
| WO2006044715A2 (en) * | 2004-10-15 | 2006-04-27 | University Of Iowa Research Foundation | Magneto resistive elements and methods for manufacture and use of same |
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| CN105652222A (en) * | 2016-03-09 | 2016-06-08 | 广州智光电气股份有限公司 | Method and system for measuring magnetic resistance characteristics of salient poles and yoke parts of switched reluctance motor |
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2018
- 2018-06-27 CN CN201810684175.7A patent/CN109061529A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373889A (en) * | 1999-09-14 | 2002-10-09 | 国际商业机器公司 | Ratio method for measurement of MR read head resistance |
| WO2006044715A2 (en) * | 2004-10-15 | 2006-04-27 | University Of Iowa Research Foundation | Magneto resistive elements and methods for manufacture and use of same |
| CN2881967Y (en) * | 2005-12-16 | 2007-03-21 | 沈阳汇博思宾尼斯传感技术有限公司 | Film low dissipation strong magnet reluctance sensing device |
| CN105652222A (en) * | 2016-03-09 | 2016-06-08 | 广州智光电气股份有限公司 | Method and system for measuring magnetic resistance characteristics of salient poles and yoke parts of switched reluctance motor |
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