CN109054302A - Thermal interfacial material and preparation method thereof - Google Patents
Thermal interfacial material and preparation method thereof Download PDFInfo
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- CN109054302A CN109054302A CN201810871021.9A CN201810871021A CN109054302A CN 109054302 A CN109054302 A CN 109054302A CN 201810871021 A CN201810871021 A CN 201810871021A CN 109054302 A CN109054302 A CN 109054302A
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- interfacial material
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5435—Silicon-containing compounds containing oxygen containing oxygen in a ring
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
Abstract
The present invention relates to a kind of thermal interfacial materials and preparation method thereof.A kind of thermal interfacial material includes spherical boron nitride 30~70%, thermosetting resin 20-50%, curing agent 5-10%, coupling agent 1-5%, diluent 1-10% as mass fraction.The preparation method is that spherical boron nitride, thermosetting resin, curing agent, defoaming agent, coupling agent and diluent are uniformly mixed by a certain percentage.Thermal interfacial material is obtained using curing oven.The present invention replaces platelet boron nitride using spherical boron nitride, loading of the boron nitride in thermosetting resin can be improved, to improve the coefficient of thermal conductivity of thermal interfacial material；Meanwhile spherical boron nitride can reduce the viscosity of composite material, improve the operating performance of thermal interfacial material.This method is simple and easy, and cost of material is cheap, and the thermal interfacial material thermal coefficient of preparation is higher, can be widely applied to high-density electronic device field of radiating.
Description
Technical field
The invention belongs to electronic package material field, it is related to a kind of thermal interfacial material and preparation method thereof.
Background technique
As the integrated level of electronic device to micromation, miniaturization development and electronic chip is higher and higher, electronics
The working efficiency and reliability of device are increasingly dependent on the solution of heat dissipation problem, therefore the heat dissipation of Electronic Packaging becomes more to weigh
It wants.Thermal interfacial material is generally used for integrated circuit (chip) or microprocessor and cooling fin or equal backing and equal backing and dissipates
Solid interface between backing.The height of thermal interfacial material thermal coefficient directly affects the heat dissipation performance of chip.Therefore, exploitation heat
Boundary material is particularly important.
The polymer matrix thermal interfacial material of Inorganic Fillers Filled has high heat conductance by filling into polymeric matrix
The mode of ceramic particle realizes the raising of heat transfer property.Processing temperature of the polymer thermal interface materials due to maintaining polymer
It is low, flexible, easy to operate, it is the most commonly used material of current thermal interfacial material in conjunction with the characteristics of inorganic filler high thermal conductivity coefficient.By
Have the characteristics that thermal coefficient height, good insulating, breakdown voltage resistant strong in ceramic particle, is presently the most common and inorganic fills out
Material, common ceramic packing includes aluminium oxide, aluminium nitride, boron nitride, silicon nitride, silicon carbide.Boron nitride has good electricity absolutely
Edge has extraordinary inoxidizability and corrosion resistance.Common boron nitride has unformed and six side of sum of cubes etc. a variety of
Crystal form.Hexagonal boron nitride is most stable of crystal form, there is the layer structure similar to graphite, has the title of white graphite, by extensive
Research and application.Due to the superior function of boron nitride itself, have in the heat filling as heat conductive insulating polymer composites
Good prospect.But boron nitride is typically all laminated structure, and density is stronger.When it is with mixed with polymers, cause to polymerize
Object viscosity steeply rises, and causes nitridation Boron addition limited, and the polymer thermal interface materials thermal coefficient of preparation is lower, and due to
Viscosity is larger, and operability is poor.
Summary of the invention
The object of the present invention is to provide a kind of thermal interfacial materials and preparation method thereof, are led with the thermal interfacial material for solving current
The imperfect technical problem of hot property.
In order to achieve the above-mentioned object of the invention, an aspect of of the present present invention provides a kind of thermal interfacial material.The hot interface material
Material is by including that the component of following mass percent is formed:
Preferably, the diameter of the spherical boron nitride is 5 μm~200 μm.
Preferably, the thermosetting resin is liquid epoxies or organic siliconresin.
Specifically, the liquid epoxies is bisphenol A-type liquid epoxy resin, bisphenol F-type epoxy resin, alicyclic ring
One of race's liquid-state epoxy resin is a variety of.
Specifically, the organic siliconresin is poly- methyl silicon resin, poly- ethyl silicone resin, polyphenylene silicone resin, polyphenylene
One of methyl silicon resin is a variety of.
Preferably, the curing agent is methyl hexahydrophthalic anhydride, tetraethylenepentamine, m-phenylene diamine (MPD), 2- ethyl -4- methyl miaow
Azoles, N, one of N- dimethyl benzylamine and three-(dimethylamino methyl) phenol or a variety of.
Preferably, the coupling agent is silane coupling agent, titanate coupling agent, aluminate coupling agent, bimetallic coupling agent
One of or it is a variety of.
Specifically, the silane coupling agent is one of KH550 coupling agent, KH560 coupling agent or KH570 coupling agent
Or it is a variety of.
Preferably, the diluent is glycidol ether, preferably n-butyl glycidyl ether, diglycidyl ether, Isosorbide-5-Nitrae-
One of butanediol diglycidyl ether, polyglycidyl ether, trihydroxy methyl propane glycidol ether are a variety of.
Preferably, the thermal coefficient of the thermal interfacial material is 0.5-6W/mK.
Another aspect of the present invention provides a kind of method of preparing heat interfacial material.The method of preparing heat interfacial material includes
Following steps:
The spherical boron nitride, thermosetting resin, curing agent, defoaming agent, coupling agent and diluent are subjected to mixed processing,
Form mixture；
The mixture processing that be heating and curing is obtained into thermal interfacial material.
Preferably, described be heating and curing as temperature is 60-200 DEG C, and the time that is heating and curing is 0.5-6h.
It preferably, include ball-milling treatment during the mixed processing, the parameter of the ball-milling technology are as follows: ball milling speed
200~500rpm；Ball-milling Time is 0.5~2h；
Thermal interfacial material of the present invention replaces platelet boron nitride using spherical boron nitride, and spherical boron nitride can reduce composite wood
The viscosity of material improves the technical effect of loading of the boron nitride in thermosetting resin to reach；The heating conduction of boron nitride simultaneously
Much higher than the heating conduction of other raw materials, therefore, the excellent thermal conductivity of the thermal interfacial material, and viscosity is small before solidification,
Strong operability.
Contained component is carried out mixed processing by method of preparing heat interfacial material of the present invention, therefore the preparation method can
The thermal interfacial material performance that preparation is effectively ensured is stablized, and assigns the thermal interfacial material excellent heating conduction, and before curing
With smaller viscosity characteristics.In addition described preparation method is simple, and cost of material is cheap, and the material property being prepared is excellent
It is different.
Detailed description of the invention
Fig. 1 is thermal interfacial material of embodiment of the present invention structural schematic diagram；10 be polymer；20 be spherical boron nitride；
Fig. 2 is spherical boron nitride of embodiment of the present invention scanning electron microscope diagram.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
On the one hand, the embodiment of the invention provides a kind of thermal interfacial materials.The thermal interfacial material uses spherical boron nitride
The heating conduction that material is improved instead of platelet boron nitride is 0.5- by the thermal coefficient that test obtains the thermal interfacial material
6W/mK.Below by way of specific embodiments and the drawings, the invention will be further described.
The thermal interfacial material is by including that the component of following mass percent is formed:
Specifically, the diameter of the spherical boron nitride is 5 μm~200 μm.Compared to platelet boron nitride, phase homogenous quantities it is spherical
The volume of boron nitride is smaller, and boron nitride is much larger than other raw materials to the contribution of viscosity in molten system to be processed, because
Can not liquefy for boron nitride is existed in the form of solid granule.Compared to sheet when using spherical boron nitride as raw material
Boron nitride, one side volume is smaller, and the probability for encountering machining object is smaller, and the viscosity resistance of generation is smaller；On the other hand spherical nitridation
It is rolling friction that boron, which encounters machining object, but also the viscosity resistance generated is smaller；On the one hand, spherical boron nitride is more than volume
It is small, it is easier to disperse, it is excessive to avoid the local viscosity resistance reunited and generated.Therefore the property showed is exactly with nitridation
Boron mass ratio rises in system, and spherical boron nitride system medium viscosity rises slower.Before reaching processable upper viscosity limit
Fillable spherical boron nitride is more.And the heating conduction of boron nitride is much higher than other components in material, therefore with boron nitride
The promotion material overall thermal conductivity of mass ratio can be promoted also.Boron nitride also has good electrical insulating property, corrosion resistance simultaneously
And inoxidizability, it is all property required for the thermal interfacial material.
The thermosetting resin is liquid epoxies or organic siliconresin.The shared property of both resins is, heat-resisting
Insulation performance might as well while performance is good.For the thermal interfacial material, this two properties are all important beneficial effect.
In one embodiment, the liquid epoxies is bisphenol A-type liquid epoxy resin, bisphenol-f type liquid ring
One of oxygen resin, alicyclic liquid-state epoxy resin are a variety of.
In another embodiment, the organic siliconresin is poly- methyl silicon resin, poly- ethyl silicone resin, polyphenylene silicon
One of resin, polyphenyl methyl silicone resin are a variety of.
The curing agent is methyl hexahydrophthalic anhydride, tetraethylenepentamine, m-phenylene diamine (MPD), 2-ethyl-4-methylimidazole, N, N- bis-
One of methylbenzylamine and three-(dimethylamino methyl) phenol are a variety of.Selected curing agent boiling point all with higher,
It can guarantee that curing agent will not excessively volatilize to influence solidification effect in solidification process.The coupling agent is silane coupling agent, titanium
One of acid esters coupling agent, aluminate coupling agent, bimetallic coupling agent are a variety of.The thermal interfacial material be inorganic material with
The composite material of high molecular material, the coupling agent have two kinds of groups of close inorganic material and organic-philic material simultaneously, can incite somebody to action
Two kinds of material tights are fused together, at the same play boron nitride heating conduction and thermoset macromolecule material it is heat-resisting, exhausted
The function of edge and solid.
The specific silane coupling agent be one of KH550 coupling agent, KH560 coupling agent or KH570 coupling agent or
It is a variety of.
The diluent is glycidol ether, preferably n-butyl glycidyl ether, diglycidyl ether, 1,4-butanediol two
One of glycidol ether, polyglycidyl ether, trihydroxy methyl propane glycidol ether are a variety of.The diluent is
Active glycerin ether diluent, curing reaction can be participated in while reducing system viscosity becomes a part of curing materials,
Material property will not be reduced.
The synergistic effect of the various raw materials of the thermal interfacial material is so that the thermal interfacial material has excellent thermal conductivity
Also has the advantages that heat-resisting, good insulation preformance while energy.As shown in Fig. 1: the main ingredient of thermal interfacial material includes
Polymeric matrix and spherical boron nitride filler, wherein 10 representation polymer matrixes, 20 represent spherical boron nitride filler.Further
Scanning electron microscope characterization has been carried out to the spherical boron nitride.It is shown such as attached drawing 2: form of the spherical boron nitride under Electronic Speculum.
Based on above-mentioned thermal interfacial material, the embodiment of the invention also provides a kind of method of preparing heat interfacial material, the system
Preparation Method includes the following steps:
S01: by the spherical boron nitride, thermosetting resin, curing agent, defoaming agent, coupling agent and diluent mixed processing；
S02: the processing that is heating and curing obtains thermal interfacial material.
Mixed processing described in specific step S01 is in order to enable each component is uniformly mixed, as can be using routine
Hybrid mode mixes each component.It as in a particular embodiment, is handled using ball milling mixing, so that each component is sufficiently mixed
It closes uniform.When using ball milling mixing processing, the technological parameter of the ball-milling treatment are as follows: 200~500rpm of ball milling speed；Ball milling
Time is 0.5~2h.
In addition, each component each component as described in thermal interfacial material above in step S01, in order to save length,
Details are not described herein.
The temperature that is heating and curing described in step S02 is 60-200 DEG C, and the time that is heating and curing is 0.5-6h.Suitable temperature can
To promote curing rate, and the strength thermal resistant water resistance of material is effectively promoted, corrosion resistance etc., temperature is too low to lead to solidification not
Completely, the performance of material is reduced, temperature is too high to will lead to energy consumption increase, generates unnecessary waste-.
The preparation method of the thermal interfacial material does raw material due to using spherical boron nitride, so that integral material viscosity drops
It is low, it becomes prone to process, and more boron nitride can be filled, enhances heating conduction, increase while reducing difficulty of processing
The strong performance of the thermal interfacial material.
It is further described combined with specific embodiments below.
Embodiment 1
The present embodiment provides a kind of thermal interfacial material and preparation method thereof, the thermal interfacial material is by including following quality
The component of percentage is formed:
Spherical boron nitride: 30%, diameter is 5 μm；
Thermosetting resin: 50% bisphenol A-type liquid epoxy resin；
Curing agent: 4% methyl hexahydrophthalic anhydride and 1% 3-(dimethylamino methyl) phenol；
Coupling agent: 10% KH560 silane coupling agent；
Diluent: 5% n-butyl glycidyl ether.
The method of preparing heat interfacial material includes the following steps:
Above-mentioned raw materials are uniformly mixed using ball-milling technology.Milling parameters are as follows: ball milling speed 500, Ball-milling Time
0.5h.Obtained mixture is solidified into 3h at 200 DEG C and obtains final thermal interfacial material.
Embodiment 2
The present embodiment provides a kind of thermal interfacial material and preparation method thereof, the thermal interfacial material is by including following quality
The component of percentage is formed:
Spherical boron nitride: 70%, diameter is 200 μm；
Thermosetting resin: 20% bisphenol F-type epoxy resin；
Curing agent: 4% tetraethylenepentamine and 1%N, N- dimethyl benzylamine；
Coupling agent: 1% KH550 silane coupling agent；
Diluent: 4% 1,4- butanediol diglycidyl ether.
The method of preparing heat interfacial material includes the following steps:
Above-mentioned raw materials are uniformly mixed using ball-milling technology.Milling parameters are as follows: ball milling speed 200, Ball-milling Time 2h.
Obtained mixture is solidified into 2h at 200 DEG C and obtains final thermal interfacial material.
Embodiment 3
Spherical boron nitride: 40%, diameter is 100 μm；
Thermosetting resin: 40% alicyclic liquid-state epoxy resin；
Curing agent: 4% m-phenylene diamine (MPD) and 1%N, N- dimethyl benzylamine；
Coupling agent: 1% KH550 silane coupling agent；
Diluent: 4% 1,4- butanediol diglycidyl ether.
The method of preparing heat interfacial material includes the following steps:
Above-mentioned raw materials are uniformly mixed using ball-milling technology.Milling parameters are as follows: ball milling speed 200, Ball-milling Time 2h.
Obtained mixture is solidified into 2h at 200 DEG C and obtains final thermal interfacial material.-
Embodiment 4
Spherical boron nitride: 50%, diameter is 50 μm；
Thermosetting resin: 30% bisphenol A-type liquid epoxy resin；
Curing agent: 4% methyl hexahydrophthalic anhydride and 1% 3-(dimethylamino methyl) phenol；
Coupling agent: 10% KH560 silane coupling agent；
Diluent: 5% n-butyl glycidyl ether.
The method of preparing heat interfacial material includes the following steps:
Above-mentioned raw materials are uniformly mixed using ball-milling technology.Milling parameters are as follows: ball milling speed 500, Ball-milling Time
0.5h.Obtained mixture is solidified into 3h at 200 DEG C and obtains final thermal interfacial material.
Embodiment 5
A kind of thermal interfacial material and preparation method thereof, in addition to the spherical boron nitride is 200 μm, other conditions with implementation
Example 4 is identical.
And the thermal interfacial material generated to five embodiments has carried out the test of heating conduction:
Table 1
| Project | Thermal coefficient (W/mK) |
| Embodiment 1 | 0.5 |
| Embodiment 2 | 6.0 |
| Embodiment 3 | 2.0 |
| Embodiment 4 | 3.0 |
| Embodiment 5 | 3.4 |
The Applicant declares that the present invention is explained by the above embodiments detailed construction feature of the invention, but the present invention is simultaneously
It is not limited to above-mentioned detailed construction feature, that is, does not mean that the present invention must rely on above-mentioned detailed construction feature and could implement.Institute
Belong to those skilled in the art it will be clearly understood that any improvement in the present invention, to the equivalence replacement of component selected by the present invention
And increase, selection of concrete mode of accessory etc., all of which fall within the scope of protection and disclosure of the present invention.
The preferred embodiment of the present invention has been described above in detail, still, during present invention is not limited to the embodiments described above
Detail within the scope of the technical concept of the present invention can be with various simple variants of the technical solution of the present invention are made, this
A little simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, can be combined in any appropriate way, in order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (10)
1. a kind of thermal interfacial material, it is characterised in that: the thermal interfacial material is by including that the component of following mass percent carries out
It is formed:
2. thermal interfacial material as described in claim 1, it is characterised in that: the diameter of the spherical boron nitride is 5 μm~200 μ
m；And/or
The thermosetting resin is liquid epoxies or organic siliconresin.
3. thermal interfacial material according to claim 2, it is characterised in that: the liquid epoxies is bisphenol A-type liquid
One of epoxy resin, bisphenol F-type epoxy resin, alicyclic liquid-state epoxy resin are a variety of；And/or
The organic siliconresin is poly- methyl silicon resin, in poly- ethyl silicone resin, polyphenylene silicone resin, polyphenyl methyl silicone resin
It is one or more.
4. thermal interfacial material according to claim 1, it is characterised in that: the curing agent is methyl hexahydrophthalic anhydride, tetrem
Five amine of alkene, m-phenylene diamine (MPD), 2-ethyl-4-methylimidazole, N, in N- dimethyl benzylamine and three-(dimethylamino methyl) phenol
It is one or more；And/or
The coupling agent is one of silane coupling agent, titanate coupling agent, aluminate coupling agent, bimetallic coupling agent or more
Kind.
5. thermal interfacial material as claimed in claim 4, it is characterised in that: the silane coupling agent be KH550 coupling agent,
One of KH560 coupling agent or KH570 coupling agent are a variety of.
6. thermal interfacial material according to claim 1, it is characterised in that: the diluent is glycidol ether, preferably just
Butyl glycidyl ether, diglycidyl ether, 1,4- butanediol diglycidyl ether, polyglycidyl ether, trihydroxy methyl third
One of alkane glycidol ether is a variety of.
7. thermal interfacial material according to claim 1-6, it is characterised in that: the thermally conductive system of the thermal interfacial material
Number is 0.5-6W/mK.
8. a kind of according to the described in any item method of preparing heat interfacial material of claim 1~7, which is characterized in that including walking as follows
It is rapid:
The spherical boron nitride, thermosetting resin, curing agent, defoaming agent, coupling agent and diluent are subjected to mixed processing, formed
Mixture；
The mixture processing that be heating and curing is obtained into thermal interfacial material.
9. the preparation method according to requiring 8, it is characterised in that: described be heating and curing as temperature is 60-200 DEG C, and heating is solid
The change time is 0.5-6h.
10. the preparation method according to requiring 8 or 9, which is characterized in that it include ball-milling treatment during the mixed processing,
The technological parameter of the ball-milling treatment are as follows: 200~500rpm of ball milling speed；Ball-milling Time is 0.5~2h.
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| CN110128997A (en) * | 2019-05-17 | 2019-08-16 | 陈定方 | A kind of organic silicon potting adhesive effectively improving thermal coefficient and preparation method |
| CN111138832A (en) * | 2019-12-16 | 2020-05-12 | 湖南文理学院 | Method for preparing BN thermal interface material |
| CN111423699A (en) * | 2020-05-12 | 2020-07-17 | 河北工业大学 | Preparation method of high-filling-amount hexagonal boron nitride/polymer blocky composite material |
| CN111423698A (en) * | 2020-05-12 | 2020-07-17 | 河北工业大学 | High-filling-amount hexagonal boron nitride nanosheet/fiber/polymer blocky composite material and preparation method thereof |
| CN111995991A (en) * | 2020-07-27 | 2020-11-27 | 深圳陶陶科技有限公司 | Thermal interface material and preparation method thereof |
| CN112877039A (en) * | 2021-03-05 | 2021-06-01 | 江苏晶河电子科技有限公司 | High-performance single-component organic silicon modified epoxy heat conduction material and preparation method thereof |
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| CN114752216A (en) * | 2022-02-28 | 2022-07-15 | 复旦大学 | Preparation method of internal stress controlled thermal interface material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110128997A (en) * | 2019-05-17 | 2019-08-16 | 陈定方 | A kind of organic silicon potting adhesive effectively improving thermal coefficient and preparation method |
| CN111138832A (en) * | 2019-12-16 | 2020-05-12 | 湖南文理学院 | Method for preparing BN thermal interface material |
| CN111423699A (en) * | 2020-05-12 | 2020-07-17 | 河北工业大学 | Preparation method of high-filling-amount hexagonal boron nitride/polymer blocky composite material |
| CN111423698A (en) * | 2020-05-12 | 2020-07-17 | 河北工业大学 | High-filling-amount hexagonal boron nitride nanosheet/fiber/polymer blocky composite material and preparation method thereof |
| CN111423699B (en) * | 2020-05-12 | 2022-11-11 | 河北工业大学 | Preparation method of high-filling-amount hexagonal boron nitride/polymer blocky composite material |
| CN111423698B (en) * | 2020-05-12 | 2022-11-15 | 河北工业大学 | High-filling-amount hexagonal boron nitride nanosheet/fiber/polymer blocky composite material and preparation method thereof |
| CN111995991A (en) * | 2020-07-27 | 2020-11-27 | 深圳陶陶科技有限公司 | Thermal interface material and preparation method thereof |
| CN111995991B (en) * | 2020-07-27 | 2022-01-18 | 深圳陶陶科技有限公司 | Thermal interface material and preparation method thereof |
| WO2022124005A1 (en) * | 2020-12-11 | 2022-06-16 | 富士フイルム株式会社 | Curable composition, thermally conductive material, thermally conductive sheet, and device with thermally conductive layer |
| CN112877039A (en) * | 2021-03-05 | 2021-06-01 | 江苏晶河电子科技有限公司 | High-performance single-component organic silicon modified epoxy heat conduction material and preparation method thereof |
| CN114752216A (en) * | 2022-02-28 | 2022-07-15 | 复旦大学 | Preparation method of internal stress controlled thermal interface material |
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Application publication date: 20181221 |