CN109053175B - Cerium-doped lutetium disilicate scintillation ceramic and preparation method thereof - Google Patents
Cerium-doped lutetium disilicate scintillation ceramic and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of optical ceramics. In order to solve the defects that impurities are easily introduced into the scintillation ceramic, ceramic particles are easily agglomerated, the product dispersibility is easily caused, and the uniformity is poor in the prior art, the invention provides the cerium-doped lutetium disilicate scintillation ceramic, and the general formula of the composition of the cerium-doped lutetium disilicate scintillation ceramic is (Lu)1‑ xCex)2Si2O7Wherein x = 0.001-0.06. The cerium-doped lutetium pyrosilicate is adopted as the raw material of the scintillating ceramic instead of the cerium-doped lutetium pyrosilicate which is widely applied at present, so that the scintillating efficiency of the product is improved, the melting point is reduced, the light emitting temperature is improved, the applicability of the invention is improved, and the transparency and the stability of the invention are enhanced.
Description
Technical Field
The invention relates to the technical field of optical ceramics, in particular to cerium-doped lutetium disilicate scintillation ceramic and a preparation method thereof.
Background
The ceramic scintillating material has high density, high light output, high light yield and short attenuation time, is suitable for the fields of medical imaging, space physics, high-energy physics, industrial flaw detection, geological exploration and the like, is gradually developed in the field of intelligent clothing at present, plays an important role in the scintillating ceramic, and has important values in the aspects of metal flaw detection of parts, measurement and control of special fibers and the like.
Although the light output of the ceramic scintillating material is not as good as that of the crystal scintillating material, the ceramic scintillating material generally has good transparency and stability, high strength, good insulating property, high temperature resistance and corrosion resistance. The ceramic scintillating material has short production time, low requirements on equipment and low cost, and the development and application of the ceramic scintillating material are not limited and limited as much as crystal scintillating materials. The ceramic scintillating material has a structure which is not as regular as the requirement of a crystal material, so that the ceramic scintillating material can better realize the uniform doping of the excitant with different concentrations, and the luminous performance of the scintillating material can be well improved. The purity, the dispersibility, the second phase doping uniformity and the like of the scintillating ceramic powder are key factors influencing the sintering performance of the ceramic and are also key problems determining the performance of the scintillating ceramic.
The invention patent with the application number of CN201210249353.6 discloses a hot-pressing sintering preparation method of cerium fluoride scintillating ceramic and the prepared cerium fluoride scintillating ceramic, which is arranged in a hot-pressing die opposite to high-purity CeF under specified pressure3Pre-pressing the powder, thereforThe high-purity CeF3The purity of the powder is more than 99 percent; a temperature rise step: after the pre-pressing pressure is removed, the vacuum degree is reached<5×10-3Pa, and then heating to 800-1000 ℃; and a hot-pressing sintering process: keeping the temperature at 800-1000 ℃, pressurizing to 100-300 MPa, and keeping the temperature and pressure for 0.5-2.5 h, wherein the ceramic has the advantages of high visible light transmittance, small crystal grains, high density, low oxidation degree and the like, but because impurities are easily introduced, ceramic particles are easily agglomerated, the product dispersibility is easily caused, and the uniformity is poor, the cerium-doped lutetium pyrosilicate scintillation ceramic with high purity, strong uniformity and strong scintillation performance and the preparation method thereof are provided.
Disclosure of Invention
In order to solve the problems, the invention provides cerium-doped lutetium disilicate scintillation ceramic with high purity, strong uniformity and strong scintillation performance and a preparation method thereof.
The cerium-doped lutetium disilicate scintillation ceramic has a general composition formula of (Lu)1-xCex)2Si2O7Wherein x = 0.001-0.06.
The cerium-doped lutetium disilicate is adopted as a raw material of the scintillating ceramic instead of the cerium-doped lutetium disilicate which is widely applied at present, the cerium-doped lutetium disilicate is in an octahedral crystal form, Lu occupies one crystallographic lattice site in a crystal structure with a C2/m space group structure, and only one luminescence center exists after the Lu is replaced by Ce. The Ce ion occupies two crystallographic lattice sites in the C2/C space group structure of the LSO, so the LSO has two luminescence centers. According to l = -dn/dt (l is light intensity, n is number of luminous centers, and t is time), compared with the cerium-doped lutetium disilicate, the cerium-doped lutetium disilicate scintillation material has stronger luminous intensity, and the cerium-doped lutetium disilicate has single-molecule luminescence, so that the cerium-doped lutetium disilicate has no afterglow and has better scintillation efficiency compared with the cerium-doped lutetium disilicate. And the cerium-doped lutetium pyrosilicate has low melting point and high light-emitting temperature, and has better applicability compared with the cerium-doped lutetium pyrosilicate.
Preferably, the general formula (Lu)1-xCex)2Si2O7Ce in (1)3+The ion being laserAnd (4) living ions.
The invention adopts Ce3+As the exciting ion, activating ion Ce3+Entering lutetium pyrosilicate octahedron to replace Lu3+The ions can improve the scintillation property of the invention and improve the luminous efficiency.
A preparation method of cerium-doped lutetium disilicate scintillation ceramic comprises the following steps:
a is according to the chemical formula (Lu)1-xCex)2Si2O7Preparing LPS (lipopolysaccharide) and Ce powder in a ratio, mixing the LPS and Ce powder with ethanol according to the volume ratio of 1 (1-4) to obtain mixed slurry, and carrying out ball milling on the mixed slurry;
b. ball-milling the ball-milled slurry, sieving the ball-milled slurry by a 200-300-mesh sieve, injecting the ball-milled slurry into a mold for shaping, and calcining the ball-milled slurry in an air or oxygen atmosphere at the temperature of 400-;
c. primary sintering: obtaining an LPS and Ce primary blank after pressure molding of the LPS and Ce powder obtained after calcination; sintering the LPS-Ce primary blank in argon atmosphere;
d. and (3) secondary sintering: sintering the primary blank subjected to primary sintering again in an argon atmosphere;
e. annealing process: controlling the heating rate to be 5-20 ℃/min, raising the temperature to 1200 ℃ and 1300 ℃, and annealing for 4-10h in the air atmosphere to obtain the cerium-doped lutetium disilicate scintillation ceramic.
Firstly, the scheme of ethanol mixing and ball milling is adopted, the particle size of LPS (Low-pressure polystyrene) Ce powder can be improved to be uniform, so that the uniformity of a product is improved, and the optical performance of the product is improved.
Preferably, the LPS-Ce powder is prepared by the following steps: mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)1-xCex)2Si2O7The ions in the raw materials are uniformly mixed according to the molar ratio, the mixture is pressed into blocks under the pressure of 180-200MPa, then the blocks are placed into a muffle furnace, the blocks are sintered for 10-12h at the temperature of 1200-1300 ℃ to form polycrystalline LPS crystals, and the polycrystalline LPS crystals are crushed and sieved to obtain LPS-Ce powder.
The invention adopts high pressure to press each component, improves the reaction rate, accelerates the growth speed of the crystal, and adopts the polycrystal LPS crystal to help to improve the production speed of the product and reduce the production cost.
Preferably, the LPS-Ce powder is prepared by the following steps: mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)1-xCex)2Si2O7The ions in the raw materials are uniformly mixed according to the molar ratio, the mixture is pressed into blocks under the pressure of 180-200MPa, then the blocks are placed into a muffle furnace, the blocks are sintered for 10-12h at the temperature of 1200-1300 ℃ to form polycrystalline LPS crystals, the polycrystalline LPS crystals are put into an iridium crucible, the crystals are pulled and grown in the atmosphere of pure nitrogen or argon to obtain single-crystal LPS crystals, and the single-crystal LPS crystals are crushed and sieved to obtain LPS-Ce powder.
Preferably, the rotation speed of the crystal in the pulling process is 10-20r/min, and the pulling speed of the crystal is 0.2-0.3 mm/h.
The method is favorable for reducing the defects in the crystal, and the LPS crystal prepared by the method has higher purity and light transmission capability, and is favorable for improving the uniformity and the scintillation performance of the product.
Preferably, the pressure forming step comprises: firstly, dry pressing LPS (low pressure polystyrene) and Ce powder, wherein the pressure of the dry pressing is 18-20MPa, then, carrying out cold isostatic pressing on the LPS and Ce subjected to the dry pressing, wherein the pressure of the cold isostatic pressing is 100-200MPa, and then obtaining an LPS and Ce primary blank, the temperature of the primary sintering is 1300-2000 ℃, the primary sintering adopts argon atmosphere, and the sintering time is 3-4 h.
The invention adopts dry pressure and cold isostatic pressing, and can enhance the compactness of the product through twice pressure forming, so that the product has good optical performance and scintillation performance, and meanwhile, the mechanical performance of the product can be improved.
Preferably, in the secondary sintering process, the pressure of argon is 40-50MPa in the temperature rising process below 350 ℃, the temperature rising rate is 10-11 ℃/min in the temperature rising process from 350 ℃ to 800 ℃, the temperature rising rate is 5-6 ℃/min in the temperature rising process from 800 ℃ to 800 ℃ until the temperature in the furnace reaches 1900-.
Preferably, the pressure of the gas is gradually increased in the temperature rise process of more than 350 ℃, and the pressure increasing rate is 30-40 MPa/h.
According to the scheme of the invention, the pressure of the gas is gradually enhanced in the heating and calcining process, the inert gas is used for uniformly applying pressure to the material, and the material grain boundary is facilitated to slide under the action of the pressure, so that the pore structure is effectively removed, the compactness of the product is improved, the product has good optical performance and scintillation performance, and meanwhile, the mechanical performance of the product can be improved.
The invention has the advantages of good transparency and stability, high strength, good insulativity, high purity, strong uniformity, strong scintillation property and high temperature resistance. The invention has the advantages of good transparency and stability, high strength, good insulativity, high purity, strong uniformity, strong flicker performance and high temperature resistance, and can be applied to the technical fields of industrial CT of intelligent clothes machinery, clothes fiber measurement and the like.
Detailed Description
The invention is further explained below with reference to specific embodiments:
example 1
A cerium-doped lutetium pyrosilicate scintillation ceramic has a general formula (Lu)0.999Ce0.001)2Si2O7，Ce3+The ions are active ions.
A preparation method of cerium-doped lutetium disilicate scintillation ceramic comprises the following steps:
a mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)0.999Ce0.001)2Si2O7Uniformly mixing the ion molar ratio, pressing into blocks under the pressure of 180MPa, then putting the blocks into a muffle furnace, sintering at 1200 ℃ for 10h to obtain polycrystalline LPS crystals, crushing and sieving the polycrystalline LPS crystals to obtain LPS: Ce powder, mixing the LPS: Ce powder and ethanol according to the volume ratio of 1:1 to obtain mixed slurry, and carrying out ball milling on the mixed slurry;
b. sieving the ball-milled slurry with a 200-300-mesh sieve, injecting the sieved slurry into a mold for shaping, and calcining at 400 ℃ in air or oxygen atmosphere;
c. primary sintering: firstly, dry pressing the obtained LPS and Ce powder after calcination, wherein the dry pressing pressure is 18MPa, then, carrying out cold isostatic pressing on the LPS and Ce subjected to dry pressing, wherein the cold isostatic pressing pressure is 100MPa, obtaining an LPS and Ce primary blank, the primary sintering temperature is 1300 ℃, argon atmosphere is adopted for primary sintering, the sintering time is 3 hours, obtaining the LPS and Ce primary blank,
d. and (3) secondary sintering: the pressure of argon is 40MPa in the temperature rising process below 350 ℃, the temperature rising rate is 10 ℃/min in the temperature rising process from 350 ℃ to 800 ℃, the temperature rising rate is 5 ℃/min in the temperature rising process from 800 ℃ to 1900 ℃, the temperature and the pressure are kept for 2h, the temperature is cooled to 50 ℃ along with the furnace, the pressure of gas is gradually enhanced in the temperature rising process above 350 ℃, and the pressure increasing rate is 30 MPa/h;
e. annealing process: controlling the heating rate to be 5 ℃/min, raising the temperature to 1300 ℃, and annealing for 4h in the air atmosphere.
Example 2
A cerium-doped lutetium pyrosilicate scintillation ceramic has a general formula (Lu)0.94Ce0.06)2Si2O7， Ce3+The ions are active ions.
A preparation method of cerium-doped lutetium disilicate scintillation ceramic comprises the following steps:
a mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)0.94Ce0.06)2Si2O7Uniformly mixing the ion molar ratio in the raw materials, pressing the mixture into blocks under the pressure of 180MPa, putting the blocks into a muffle furnace, sintering the blocks at 1200 ℃ for 10 hours to obtain polycrystalline LPS crystals, feeding the polycrystalline LPS crystals into an iridium crucible, pulling the crystals to grow in the atmosphere of pure nitrogen or argon, wherein the rotating speed of the crystals in the pulling process is 10r/min and the pulling speed of the crystals is 0.3mm/h to obtain single-crystal LPS crystals, crushing and sieving the single-crystal LPS crystals to obtain LPS: Ce powder, mixing the LPS: Ce powder and ethanol according to the volume ratio of 1:1 to obtain mixed slurry, and carrying out ball milling on the mixed slurry;
b. sieving the ball-milled slurry with a 200-300-mesh sieve, injecting the sieved slurry into a mold for shaping, and calcining the molded slurry in air or oxygen atmosphere at 400 ℃;
c. primary sintering: firstly, dry pressing the obtained LPS: Ce powder after calcination, wherein the pressure of the dry pressing is 18MPa, then carrying out cold isostatic pressing on the LPS: Ce subjected to dry pressing, wherein the pressure of the cold isostatic pressing is 100MPa, thus obtaining an LPS: Ce primary blank, the temperature of primary sintering is 1300 ℃, argon atmosphere is adopted for the primary sintering, and the sintering time is 3 hours.
d. And (3) secondary sintering: the pressure of argon is 50MPa in the temperature rising process below 350 ℃, the temperature rising rate is 11 ℃/min in the temperature rising process from 350 ℃ to 800 ℃, the temperature rising rate is 6 ℃/min in the temperature rising process from 800 ℃ to 2000 ℃, the argon is cooled to 50 ℃ along with the furnace after staying for 3 hours under the temperature and pressure condition, the pressure of the gas is gradually enhanced in the temperature rising process above 350 ℃, and the pressure increasing rate is 40 MPa/h;
e. annealing process: controlling the heating rate to be 5 ℃/min, raising the temperature to 1200 ℃, and annealing for 4h in the air atmosphere.
Example 3
A cerium-doped lutetium pyrosilicate scintillation ceramic has a general formula (Lu)0.99Ce0.01)2Si2O7， Ce3+The ions are active ions.
A preparation method of cerium-doped lutetium disilicate scintillation ceramic comprises the following steps:
a mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)0.99Ce0.01)2Si2O7The ions in the raw materials are uniformly mixed according to a molar ratio, the mixture is pressed into blocks under the pressure of 190MPa, then the blocks are placed into a muffle furnace, the blocks are sintered for 11 hours at the temperature of 1100 ℃ to form polycrystal LPS crystals, then the polycrystal LPS crystals are fed into an iridium crucible, the crystals are pulled and grown in the atmosphere of pure nitrogen or argon, the rotating speed of the crystals in the pulling process is 15r/min, the pulling speed of the crystals is 0.1mm/h, single crystal LPS crystals are obtained, and the single crystal LPS crystals are crushed and sieved to obtain LPS: Ce powder.
b. Sieving the ball-milled slurry with a 200-300-mesh sieve, injecting the sieved slurry into a mold for shaping, and calcining at 500 ℃ in air or oxygen atmosphere;
c. primary sintering: firstly, dry pressing the calcined LPS and Ce powder, wherein the dry pressing pressure is 19MPa, then carrying out cold isostatic pressing on the dry pressed LPS and Ce, wherein the cold isostatic pressing pressure is 150MPa, thus obtaining an LPS and Ce primary blank, the primary sintering temperature is 1500 ℃, the primary sintering adopts argon atmosphere, and the sintering time is 3 hours, thus obtaining the LPS and Ce primary blank; sintering the LPS-Ce primary blank in argon atmosphere;
d. and (3) secondary sintering: the pressure of argon is 45MPa in the temperature rising process below 350 ℃, the temperature rising rate is 10 ℃/min in the temperature rising process from 350 ℃ to 800 ℃, the temperature rising rate is 5 ℃/min in the temperature rising process to above 800 ℃, the temperature in the furnace reaches 1950 ℃, the temperature and the pressure are kept for 2.5 hours, the temperature is cooled to 50 ℃ along with the furnace, the pressure of gas is gradually increased in the temperature rising process to above 350 ℃, and the pressure increasing rate is 35 MPa/h;
e. annealing process: the temperature rise rate is controlled to be 10 ℃/min, the temperature is raised to 1250 ℃, and annealing is carried out for 4h under the air atmosphere.
Example 4
Cerium-doped lutetium pyrosilicate scintillating ceramic, and cerium-doped lutetium pyrosilicate scintillating ceramicThe general formula of the composition of the lutetium heteropyrosilicate scintillating ceramic is (Lu)0.999Ce0.001)2Si2O7， Ce3+The ions are active ions.
A preparation method of cerium-doped lutetium disilicate scintillation ceramic comprises the following steps:
a mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)0.999Ce0.001)2Si2O7The ions in the raw materials are uniformly mixed according to a molar ratio, the mixture is pressed into blocks under the pressure of 190MPa, then the blocks are placed into a muffle furnace, the blocks are sintered for 11 hours at the temperature of 1100 ℃ to form polycrystal LPS crystals, then the polycrystal LPS crystals are fed into an iridium crucible, the crystals are pulled and grown in the atmosphere of pure nitrogen or argon, the rotating speed of the crystals in the pulling process is 15r/min, the pulling speed of the crystals is 0.1mm/h, single crystal LPS crystals are obtained, and the single crystal LPS crystals are crushed and sieved to obtain LPS: Ce powder.
b. Sieving the ball-milled slurry with a 200-300-mesh sieve, injecting the sieved slurry into a mold for shaping, and calcining at 500 ℃ in air or oxygen atmosphere;
c. primary sintering: firstly, dry pressing the calcined LPS and Ce powder, wherein the dry pressing pressure is 19MPa, then carrying out cold isostatic pressing on the dry pressed LPS and Ce, wherein the cold isostatic pressing pressure is 150MPa, thus obtaining an LPS and Ce primary blank, the primary sintering temperature is 1500 ℃, the primary sintering adopts argon atmosphere, and the sintering time is 3 hours, thus obtaining the LPS and Ce primary blank; sintering the LPS-Ce primary blank in argon atmosphere;
d. and (3) secondary sintering: the pressure of argon is 45MPa in the temperature rising process below 350 ℃, the temperature rising rate is 10 ℃/min in the temperature rising process from 350 ℃ to 800 ℃, the temperature rising rate is 5 ℃/min in the temperature rising process to above 800 ℃, the temperature in the furnace reaches 1950 ℃, the temperature and the pressure are kept for 2.5 hours, the temperature is cooled to 50 ℃ along with the furnace, the pressure of gas is gradually increased in the temperature rising process to above 350 ℃, and the pressure increasing rate is 30 MPa/h;
e. annealing process: the temperature rise rate is controlled to be 10 ℃/min, the temperature is raised to 1250 ℃, and annealing is carried out for 4h under the air atmosphere.
Example 5
A cerium-doped lutetium pyrosilicate scintillation ceramic has a general formula (Lu)0.98Ce0.02)2Si2O7， Ce3+The ions are active ions.
A preparation method of cerium-doped lutetium disilicate scintillation ceramic comprises the following steps:
a mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)0.99Ce0.01)2Si2O7The ions in the raw materials are uniformly mixed according to a molar ratio, the mixture is pressed into blocks under the pressure of 190MPa, then the blocks are placed into a muffle furnace, the blocks are sintered for 11 hours at the temperature of 1100 ℃ to form polycrystal LPS crystals, then the polycrystal LPS crystals are fed into an iridium crucible, the crystals are pulled and grown in the atmosphere of pure nitrogen or argon, the rotating speed of the crystals in the pulling process is 15r/min, the pulling speed of the crystals is 0.1mm/h, single crystal LPS crystals are obtained, and the single crystal LPS crystals are crushed and sieved to obtain LPS: Ce powder.
b. Sieving the ball-milled slurry with a 200-mesh sieve, injecting the sieved slurry into a mold for shaping, and calcining the shaped slurry in the atmosphere of air or oxygen at 500 ℃;
c. primary sintering: firstly, dry pressing the calcined LPS and Ce powder, wherein the dry pressing pressure is 19MPa, then carrying out cold isostatic pressing on the dry pressed LPS and Ce, wherein the cold isostatic pressing pressure is 150MPa, thus obtaining an LPS and Ce primary blank, the primary sintering temperature is 1500 ℃, the primary sintering adopts argon atmosphere, and the sintering time is 3 hours, thus obtaining the LPS and Ce primary blank; sintering the LPS-Ce primary blank in argon atmosphere;
d. and (3) secondary sintering: the pressure of argon is 45MPa in the temperature rising process below 350 ℃, the temperature rising rate is 10 ℃/min in the temperature rising process from 350 ℃ to 800 ℃, the temperature rising rate is 5 ℃/min in the temperature rising process to above 800 ℃, the temperature in the furnace reaches 1950 ℃, the temperature and the pressure are kept for 2.5 hours, the temperature is cooled to 50 ℃ along with the furnace, the pressure of gas is gradually increased in the temperature rising process to above 350 ℃, and the pressure increasing rate is 32 MPa/h;
e. annealing process: the temperature rise rate is controlled to be 10 ℃/min, the temperature is raised to 1250 ℃, and annealing is carried out for 4h under the air atmosphere.
In the embodiments of the invention, after fine grinding and polishing, the semitransparent scintillating optical ceramic is obtained, and the relative density of the scintillating optical ceramic is more than 99 percent. The luminescent material shows good luminescent performance under the ultraviolet excitation condition, and the luminescent intensity of the luminescent material reaches more than 65 percent of that of a Ce: Lu2SiO5 single crystal.
Claims (4)
1. A preparation method of cerium-doped lutetium disilicate scintillation ceramic is characterized by comprising the following steps:
a is according to the chemical formula (Lu)1-xCex)2Si2O7Preparing LPS (lipopolysaccharide) and Ce powder in a ratio, mixing the LPS and Ce powder with ethanol according to the volume ratio of 1 (1-4) to obtain mixed slurry, and carrying out ball milling on the mixed slurry;
b. sieving the ball-milled slurry with a 200-300-mesh sieve, injecting the sieved slurry into a mold for shaping, and calcining the molded slurry in an air or oxygen atmosphere at the temperature of 400-;
c. primary sintering: firstly, dry pressing LPS (low pressure polystyrene) and Ce powder, wherein the pressure of the dry pressing is 18-20MPa, then, carrying out cold isostatic pressing on the LPS and Ce subjected to the dry pressing, wherein the pressure of the cold isostatic pressing is 100-200MPa, then obtaining an LPS and Ce primary blank, and preliminarily sintering the LPS and Ce primary blank in an argon atmosphere, wherein the preliminary sintering temperature is 1300-2000 ℃, and the sintering time is 3-4 h;
d. and (3) secondary sintering: sintering the primary blank subjected to primary sintering again in an argon atmosphere;
in the secondary sintering process, the pressure of argon is 40-50MPa in the temperature rising process below 350 ℃, the temperature rising rate is 10-11 ℃/min in the temperature rising process from 350 ℃ to 800 ℃, the temperature rising rate is 5-6 ℃/min in the temperature rising process above 800 ℃, the temperature in the furnace reaches 1900-2000 ℃, the temperature and the pressure are kept for 2-3h, then the temperature is cooled to 50-60 ℃ along with the furnace, the pressure of gas is gradually enhanced in the temperature rising process above 350 ℃, and the enhancing rate of the pressure is 30-40 MPa/h;
e. annealing process: controlling the heating rate to be 5-20 ℃/min, heating to 1200 ℃ and 1300 ℃, and annealing for 4-10h in the air atmosphere to obtain the cerium-doped lutetium disilicate scintillation ceramic;
the general formula of the cerium-doped lutetium disilicate scintillation ceramic is (Lu)1-xCex)2Si2O7Wherein x = 0.001-0.06.
2. The method for preparing cerium-doped lutetium disilicate scintillation ceramic as claimed in claim 1, wherein the method comprises the following steps: the LPS-Ce powder is prepared by the following steps: mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)1-xCex)2Si2O7The ions in the raw materials are uniformly mixed according to the molar ratio, the mixture is pressed into blocks under the pressure of 180-200MPa, then the blocks are placed into a muffle furnace, the blocks are sintered for 10-12h at the temperature of 1200-1300 ℃ to form polycrystalline LPS crystals, and the polycrystalline LPS crystals are crushed and sieved to obtain LPS-Ce powder.
3. The method for preparing cerium-doped lutetium disilicate scintillation ceramic as claimed in claim 1, wherein the method comprises the following steps: the LPS-Ce powder is prepared by the following steps: mixing Lu2O3Powder of SiO2Powder, Ce2O3The powder is according to the general formula (Lu)1-xCex)2Si2O7The ions in the raw materials are uniformly mixed according to the molar ratio, the mixture is pressed into blocks under the pressure of 180-200MPa, then the blocks are placed into a muffle furnace, the blocks are sintered for 10-12h at the temperature of 1200-1300 ℃ to form polycrystalline LPS crystals, the polycrystalline LPS crystals are put into an iridium crucible, the crystals are pulled and grown in the atmosphere of pure nitrogen or argon to obtain single-crystal LPS crystals, and the single-crystal LPS crystals are crushed and sieved to obtain LPS-Ce powder.
4. The method for preparing cerium-doped lutetium disilicate scintillation ceramic as claimed in claim 3, wherein the method comprises the following steps: the rotating speed of the crystal in the pulling process is 10-20r/min, and the pulling speed of the crystal is 0.2-0.3 mm/h.
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| CN107555977A (en) * | 2017-07-14 | 2018-01-09 | 上海大学 | Cerium dopping silicic acid lutetium scintillating ceramic and its HIP sintering preparation method |
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| CN107555977A (en) * | 2017-07-14 | 2018-01-09 | 上海大学 | Cerium dopping silicic acid lutetium scintillating ceramic and its HIP sintering preparation method |
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