CN109041554B - Method and device for protecting reliability of electronic device during ionizing particle bombardment - Google Patents
Method and device for protecting reliability of electronic device during ionizing particle bombardment Download PDFInfo
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- CN109041554B CN109041554B CN201810555269.4A CN201810555269A CN109041554B CN 109041554 B CN109041554 B CN 109041554B CN 201810555269 A CN201810555269 A CN 201810555269A CN 109041554 B CN109041554 B CN 109041554B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
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- G06F30/39—Circuit design at the physical level
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Abstract
The invention discloses a method and a device for protecting the reliability of an electronic device during the bombardment of ionized particles, wherein the method comprises the following steps: s1, calculating the mean free path of the ionizing radiation particles acting in the electronic device aiming at different energies; s2, determining the size and the pressure value of a gas device required by the radiation protection of the electronic device according to the level requirement of the radiation protection and the mean free path of ionizing radiation particles and aiming at the technical node size of the electronic device; s3, placing the electronic device in a gas device, and filling neutral gas with preset pressure; and S4, reducing the energy flux density of the incident particles by utilizing the collision of the incident particles and neutral gas in the gas device, and protecting the electronic device from being damaged due to particle bombardment. The invention considers that the main external factor for damaging the electronic device is the strength of ion energy flow, reduces the energy flow density of incident particles through the arrangement of the gas device, and is combined with the design of a reliable circuit, thereby protecting the electronic device from being damaged due to particle bombardment and improving the reliability of the electronic device.
Description
Technical Field
The invention relates to the field of microelectronic integrated circuits, in particular to an integrated circuit chip working in a high-intensity particle flow environment, and particularly relates to a method and a device for protecting the reliability of an electronic device during bombardment of ionized particles.
Background
In the field of integrated circuit and chip fabrication, some chips need to operate in environments where a large number of particles are irradiated, such as medical electronics, automotive electronics, and aerospace electronics. In these externally irradiated environments, the chips can exhibit problems of premature fatigue and damage, leading to chip damage and failure. Modern high performance system on chip integrated circuits (SoC) and High Bandwidth Memory (HBM) chips are particularly sensitive to various ionizing radiation particles, and international semiconductor and integrated circuit companies (such as microchips/Microsemi, Cypress, Xlinx, and the like) have been researching and developing for decades from design methods, radiation protection resistance (RadHard) to chip manufacturing and packaging tests, forming a whole set of standards (JEDEC standards, army standards, and the like). These standards set requirements for charged particles (e.g., protons) and neutral particles (e.g., neutrons) not only for total radiation dose resistance (TID) to address premature fatigue, but also for single event rates or single event damage (SER or SEU). However, the single-chip SoC or FPGA chips of these products not only cost thousands of dollars per unit, but are also listed as sensitive sales goods.
The design is fully designed with the thermionic effect considered and the heating element is far away from the heat sensitive devices, however, in the environment with strong particle flow radiation, the traditional method is not enough to deal with the damage caused by particle radiation, the damage of radiation particles to grid oxide film crystal lattice can cause defects to cause short circuit between electrodes, the general particle radiation is caused by protons, α -particles, electrons and the like, the protons, α -particles and electrons are mainly from ionization and other series of reactions (including secondary ionization) caused by external high-energy particles entering a system, the damage protection of the integrated circuit chip in the prior art is mainly realized by means of special wiring method design and device structure adjustment, and the design and production of the integrated circuit need larger protection effect, and the ideal protection effect and the protection effect are not achieved according to the current principle of particle bombardment.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a method and a device for protecting the reliability of an electronic device during the bombardment of ionized particles, and the method and the device can increase the collision frequency of incident particles and neutral gas and reduce the energy flux density of the incident particles, thereby protecting the electronic device from being damaged due to the bombardment of the particles and improving the reliability of the electronic device.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method of protecting reliability of an electronic device upon bombardment by ionizing particles, comprising:
s1, respectively calculating the mean free path of the ionizing radiation particles with different energies acting in the electronic device;
s2, determining the size of a gas device and a preset gas pressure value of the charged gas required by the radiation protection of the electronic device according to the level requirement of the radiation protection and the calculated mean free path of the ionizing radiation particles and the size of the technical node of the electronic device;
s3, placing the electronic device in the gas device, realizing electric connection with the outside, filling neutral gas with preset pressure into the gas device, and sealing the gas device;
and S4, reducing the energy flux density of the incident particles by utilizing the collision of the incident particles and neutral gas in the gas device, and protecting the electronic device from being damaged due to particle bombardment.
Further, a method for protecting reliability of an electronic device upon bombardment by ionizing particles as described above, wherein the ionizing radiation particles include primary charged particles including protons, α -particles and electrons, and neutral particle neutrons in step S1, and secondary charged particles generated by interaction of the neutrons with a target substance include protons, α -particles and electrons, etc.
Further, the method for protecting the reliability of the electronic device during the bombardment of the ionized particles as described above, wherein the range of the technical node size of the electronic device described in the step S2 includes 10 μm to 3 nm.
Further, the method for protecting the reliability of the electronic device during the bombardment of the ionized particles as described above, wherein the neutral gas in the step S3 is any one or a combination of inert gases.
The invention also provides a device for protecting the reliability of the electronic device during the bombardment of the ionized particles, which comprises a sealable shell for accommodating the electronic device, wherein neutral gas with a preset air pressure value is filled in the shell, the shell is made of high-strength insulating materials which do not influence the penetration and the transmission of electromagnetic waves, the shell is provided with a vent hole and a lead wire extending to the outside of the shell, and the lead wire is connected with the electronic device arranged in the shell.
Further, the apparatus for protecting the reliability of the electronic device during the bombardment of the ionized particles as described above, wherein the electronic device is disposed at a central position of the housing through a support structure.
Further, the device for protecting the reliability of the electronic device during the bombardment of the ionized particles, wherein the pressure of the neutral gas filled in the shell is more than 1 atmosphere.
Further, the device for protecting the reliability of the electronic device during the bombardment of the ionized particles is characterized in that the lead is arranged at the bottom of the shell, one end of the lead is connected with the electronic device arranged in the shell, and the other end of the lead is connected with an external device positioned outside the shell.
Further, the apparatus for protecting the reliability of the electronic device during the bombardment of the ionized particles is described above, wherein the geometric dimension of the shell is determined according to the dimension of the electronic device and the grade requirement of the radiation protection.
The invention has the beneficial effects that: the method and the device provided by the invention have the advantages that the electronic device is placed in the shell filled with neutral gas in consideration of the fact that the main external factor for damaging the electronic device is the strength of ion energy flow, the shell does not influence the penetration of electromagnetic waves and can effectively reduce the energy flow density of external particles, and therefore, the normal working environment of the electronic device is protected to the maximum extent. The invention changes the technical idea of radiation damage protection by means of special wiring design and device structure adjustment at present, and reduces the energy flux density of incident particles by increasing the collision frequency of the incident particles and neutral gas in the shell according to the principle of molecular dynamics, thereby protecting the electronic device from being damaged due to particle bombardment and improving the reliability of the electronic device.
Drawings
FIG. 1 is a flow chart of a method for protecting reliability of an electronic device during ionizing particle bombardment as provided in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an apparatus for protecting reliability of an electronic device during bombardment by ionized particles according to an embodiment of the present invention;
FIG. 3 is an SiO diagram of a charged particle pass gate in an embodiment of the present invention2A schematic representation of a material;
FIG. 4 is a schematic diagram of the ionization event process of charged particle interaction in an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to specific embodiments and with reference to the following drawings.
In the present electronic device application environment, charged particles in the cosmic space allen radiation band are the main sources of electrons, ions and protons, and secondary charged particles (e.g., protons, α -particles, electrons, deuterium) generated by transient neutrons in the event of external space crossing to the earth's surface, high altitude or lightning, etc. current damage protection relies primarily on special wiring methods and device structure adjustments when circuit reliability is designed, but in environments with strong particle flux radiation, the above-mentioned conventional methods are not sufficient to account for damage to the particle radiation, as shown in fig. 3, damage to the grid oxide film lattice by radiation particles can cause defects such that the electrodes short circuit, as shown in fig. 4, ionizing events that interact with charged particles, thereby generating particle radiation, which is generally caused by protons, α -particles, electrons, etc. the present invention considers that the energy of damaged ions is a product of strong ion flux G, thus the external energy density of the device is not as a factor F, and the external energy of the device is effectively reduced.
The invention provides a method and a device for protecting the reliability of an electronic device, aiming at the reliability damage of the electronic device such as a semiconductor or an integrated circuit and the like under the bombardment of various ionizing radiation particles in a strong particle flow radiation environment.
As shown in fig. 1, a method for protecting reliability of an electronic device upon bombardment by ionized particles, the method comprising:
and S1, respectively calculating the mean free path of the ionizing radiation particles with different energies acting in the electronic device.
From the principle of molecular dynamics, the flying mean free path λ of a particle in a gas is 1/n σ, where λ, n and σ represent the mean free path of the particle, the gas density in the space where the particle is located, and the collision cross section, respectively. The mean free path is inversely proportional to the product of the collision frequency, which is proportional to the pressure, and the gas density, which is proportional to the pressure, and the collision frequency, which is proportional to the particle velocity v, the gas density n, and the collision cross-section σ, can be found. In an inert gas at room temperature, the collision of the primary positively charged particles with the neutral gas is a charge exchange. By this charge exchange, the energy loss E ═ 2 (m)1m2)/(m1+m2)2σm/σtotalWherein m is1，m2,σmAnd σtotalRespectively, the mass of particle 1, the mass of particle 2, the momentum transfer collision cross-section and the total collision cross-section. When the particles collide with a neutral gas of the same mass, the energy conversion rate epsilon (E100% > (E)0-E)/E0) Up to 50%, i.e. each collision can consume a large amount of energy and convert it into thermal energy.
The invention respectively calculates and establishes the mean free path lambda of the ionizing radiation interaction of ionizing radiation particles with different energies, namely the primary charged particle proton, α -particle and electron, and neutral particle neutron, concretely, the mean free path lambda of the primary charged particle proton, α -particle and electron is calculated by the following formula:
where σ is the cross-section of action, η is the number of target substance interactions per unit volume,
and
flux of protons, α -particles and electrons before and after the action, Δ x (═ x-x), respectively0) Is the path length; energy absorption, i.e. stopping power S (MeV. cm) of charged particles with energy E (keV)2The calculation of/g) and the distance of action δ x is as follows:
wherein k is1Is a constant, Z is the atomic number of the target substance, Z is the number of incident particle charges, MaFor molar mass constant, β (═ v/C) is the relativistic velocity, μ (═ mC)2) Is a constant, C is the speed of light, I is the average excitation potential (eV) of the atom, and Δ and δ are correction constants; wherein the calculation of the electronic stopping power S is adjusted accordingly, and the stopping power includes the collision stopping power SeAnd nuclear arrestability SnAlso using StotTo show that, when the density of a target substance is expressed by ρ and normalization is performed for different action substances, there is a linear energy transfer LET or L (keV/μm)
L＝Stot·ρ。
The mean free path λ of the neutrals neutrons is calculated by:
λ＝I/∑(σi·Ni),Ni＝ρNani/M
where, σ is the large cross section of the compoundiIs the effective micro-section under the condition of single element, rho is the density of the target substance, NaIs an Avogastron constant, niThe amount of each element in the compound molecule, and M is the molecular weight of the compound;
σ(E)＝2π[R+λr(E)]2(l-αcosβ)
where σ includes a scattering cross-section and an absorption cross-section, R is the effective radius of the acting atom, λrTo reduce the wavelength, the α value is determined by whether there is absorption or not, and β is the change value of the action phase.
The secondary charged particles generated by the interaction of the neutrons with the target material again include protons, α -particles, and electrons, whose characteristic mean free path λ is again calculated by:
where σ is the cross-section of action, η is the number of target substance interactions per unit volume,
and
flux of protons, α -particles and electrons before and after the action, Δ x (═ x-x), respectively0) Is the path length; the energy absorption, i.e. stopping power S, of these secondary charged particles with energy E produced by the neutrons and the distance of action δ x are calculated as follows:
wherein k is1Is a constant, Z is the atomic number of the target substance, Z is the number of incident particle charges, MaFor molar mass constant, β (═ v/C) is the relativistic velocity, μ (═ mC)2) Is a constant, C is the speed of light, I is the average excitation potential (eV) of the atom, and Δ and δ are correction constants; wherein the calculation of the electronic stopping power S is adjusted accordingly, and the stopping power includes the collision stopping power SeAnd nuclear arrestability SnAlso using StotTo express, when ρ represents the density of the target substance, the density of the target substance is not equal toNormalization of the interacting substances results in a linear energy shift LET or L (keV/mum)
L＝Stoi·ρ。
And S2, determining the size of a gas device and the preset gas pressure value of the charged gas required by the radiation protection of the electronic device according to the grade requirement of the radiation protection and the calculated mean free path of the ionizing radiation particles and the size of the technical node of the electronic device.
In the present embodiment, the main external factors for damaging the device are the intensity of the ion energy flow G, i.e., the product of the particle energy E and the ion current density F. Furthermore, the energy conversion rate can reach 50% when the particles collide with the same mass of neutral gas, i.e. each collision can consume a large amount of energy and convert it into thermal energy. The invention provides a high pressure gas apparatus, and an electronic device or system is arranged in the gas apparatus. The housing of the gas device is filled with neutral gas.
According to the present data, the mean free path of the particles in argon at one atmosphere is about 90 microns. This means that if the high pressure gas device (housing) is sized in the order of centimeters, there are 111 chances of ion collisions at one atmosphere. If the air pressure is 10 atmospheres, then the mean free path of the collision is 9 microns and the collider will have 1110 times. It can be seen that the larger the gas pressure, the smaller the gas mean free path of the external particles, the smaller the mean free path, the larger the number of collisions, and the larger the number of collisions, the larger the energy of the particles consumed. According to the radiation energy and the radiation quality of radiation particles in the strong particle flow radiation environment, the optimal neutral gas and the preset gas pressure value can be selected. The size range of the technical node of the semiconductor technology is 10 mu m-3nm, the common technology at present is 0.18um and the like, the advanced technology is 28nm, 16nm and the like, and the 10nm, 3nm and the like are more used in various high-end scenes in the future. As technology nodes shrink, foreign particles will be more sensitive and more serious to damage to the device. Preferably, depending on the size of the mean free path of the ionizing radiation particles, the respective semiconductor device process dimensions to be included may be determined.
And S3, placing the electronic device in the gas device, realizing the electric connection with the outside, filling neutral gas with preset pressure into the gas device, and sealing the gas device.
In this embodiment, the neutral gas filled in the housing may be any one or a combination of a plurality of inert gases. The shell is provided with two or more vent holes, and the vent holes are used for filling neutral gas into the shell from the outside of the shell, so that the electronic device in the shell is in the environment of the neutral gas, and the electronic device is continuously filled until the air pressure in the shell reaches a preset air pressure value determined by calculation, and then the inflation is stopped and the vent holes are sealed, so that the shell becomes a closed space. The electronic device can be arranged at the central position of the shell through the supporting structure, and is electrically connected with the outside through a lead, and the lead can transmit signals of the electronic device to an external device. When various ionizing radiation particles in a strong particle flow radiation environment outside the shell are shot into the shell, the ionizing radiation particles collide with inert neutral gas in the shell, and part of energy is transferred to the neutral gas at room temperature.
The present invention can set the air pressure in the housing within the range of 1 to 10 atmospheres, and can be expanded to more than 10 atmospheres according to the grade of use, therefore, the material of the housing should be able to bear the internal pressure of 1 to 10 atmospheres, even more than 10 atmospheres. The shape of the shell can be cylindrical, cuboid, square or any other shape, and also can be irregular, the geometric dimension of the shell can be determined according to the requirement and the size of the device generally, and the geometric dimension of the shell is larger than the size of the device by a few millimeters or centimeters and depends on the grade of protection required. The material of the shell can be selected from high-strength insulators, such as high polymer materials, and the penetration and the transmission of electromagnetic waves are not influenced.
And S4, reducing the energy flux density of the incident particles by utilizing the collision of the incident particles and neutral gas in the gas device, and protecting the electronic device from being damaged due to particle bombardment.
According to the theoretical analysis, the particles entering from the outside collide with the neutral gas in the device, and part of the energy is transferred to the neutral gas at room temperature. Since the neutral inert gas is mainly used for ionization process and has no other chemical process, the energy transfer is mainly in the secondary emission particles. By analogy, the energy of the secondary emission particles is transferred to the three-emission particles through charge exchange, and after each collision consumes a certain amount of energy and a large amount of collisions, the charge exchange is stopped until the remaining energy is lower than the ionization energy (the ionization energy of Ar is 15.76 eV). The invention uses the gas device filled with high-pressure neutral gas to reduce the energy flow of incident ions, thereby realizing the purpose of protecting integrated circuit devices and electronic systems.
The embodiment of the invention also provides a device for protecting the reliability of an electronic device during the bombardment of ionized particles, as shown in fig. 2, the protection device comprises: the electronic device or system comprises an electronic device or system 1 and a sealable shell 2 for accommodating the electronic device or system 1, wherein neutral gas with a preset air pressure value is filled in the shell, the shell is made of high-strength insulating materials, a vent hole 3 is formed in the shell, a lead extending to the outside of the shell is arranged at the bottom of the shell, the electronic device or system 1 is connected with one end, located in the shell, of the lead, and the end, located outside the shell, of the lead is used for being connected with an external device.
The neutral gas filled in the shell can be any one or combination of more of inert gases. The air pressure in the housing can be preset in the range of 1 to 10 atmospheres, and can be expanded to more than 10 atmospheres according to the use level, and is selected according to the specific process and radiation protection requirements. The larger the pressure of the gas, the smaller the mean free path of the radiation particles, but the higher the pressure-bearing requirement for the housing.
According to the selected range of the gas pressure, the high-strength insulating material adopted by the shell is an insulating material with the pressure resistance of 1-10 atmospheres or more than 10 atmospheres, a high-strength high polymer material can be selected, and an optimized design framework with high mechanical strength is adopted. The electronic device or system 1 is placed in the center of the housing 2, and a support structure can be designed in the housing to support and fix the electronic device or system. The bottom of the shell is provided with a metal connecting wire for transmitting the signal of the electronic device. After the inert gas is filled into the housing to a certain pressure, the vent hole is closed and the sealing performance is ensured. The geometry of the housing may be as large as desired, typically on the order of a few millimeters or centimeters larger than the chip or system (depending on the level of shielding desired), depending on the size of the chip.
The integrated circuit manufacturing process range starts from 10 μm, the common process is 0.18um, the current advanced process is 28nm or 16nm, and the future mainstream process is 10nm and enters 3 nm. Preferably, the characteristic dimensions of the semiconductor process technology nodes of the electronic device or system 1 of the present invention range from 10 μm to 3 nm. As technology nodes shrink, foreign particles will be more sensitive and more serious to damage to the device.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is intended to include such modifications and variations.
Claims (9)
1. A method of protecting reliability of an electronic device upon bombardment by ionizing particles, comprising:
s1, respectively calculating the mean free path of the ionizing radiation particles with different energies acting in the electronic device;
s2, determining the size of a gas device and a preset gas pressure value of the charged gas required by the radiation protection of the electronic device according to the level requirement of the radiation protection and the calculated mean free path of the ionizing radiation particles and the size of the technical node of the electronic device;
s3, placing the electronic device in the gas device, realizing electric connection with the outside, filling neutral gas with preset pressure into the gas device, and sealing the gas device;
and S4, reducing the energy flux density of the incident particles by utilizing the collision of the incident particles and neutral gas in the gas device, and protecting the electronic device from being damaged due to particle bombardment.
2. The method for protecting the reliability of an electronic device during the bombardment of ionizing particles according to claim 1, wherein the ionizing radiation particles in the step S1 include primary charged particle protons, α -particles, electrons, and neutrals.
3. The method of protecting the reliability of an electronic device upon bombardment of ionizing particles of claim 2, wherein: the mean free path λ of the neutrals in step S1 is calculated by the following equation:
λ＝1/∑(σi·Ni)，Ni＝ρNani/M
where, σ is the large cross section of the compoundiIs the effective micro-section under the condition of single element, rho is the density of the target substance, NaIs an Avogastron constant, niThe amount of each element in the compound molecule, and M is the molecular weight of the compound;
σ(E)＝2π[R+λr(E)]2(1-αcosβ)
where σ includes a scattering cross-section and an absorption cross-section, R is the effective radius of the acting atom, λrTo reduce the wavelength, the α value is determined by whether there is absorption or not, and β is the change value of the action phase.
4. The method of protecting the reliability of an electronic device upon bombardment of ionizing particles of claim 1, wherein: the range of the technology node size of the electronic device described in step S2 includes 10 μm to 3 nm.
5. The method of protecting the reliability of an electronic device upon bombardment of ionizing particles of claim 1, wherein: the neutral gas in step S3 is any one or combination of inert gases.
6. The utility model provides a device of protection electron device reliability during ionized particle bombardment which characterized in that: including a inclosed casing that is used for holding electron device, fill the neutral gas of predetermineeing the atmospheric pressure value in the casing, the casing adopts the high strength insulating material preparation that does not influence the electromagnetic wave and pierce through and propagate to form, is equipped with the air vent on the casing to be provided with the wire that extends to the casing outside, the wire with arrange in electron device in the casing is connected, the geometric dimensions of casing requires according to electron device's size and radiation protection's grade and confirms, and several millimeters or several centimetres of magnitude are bigger than electron device.
7. The apparatus for protecting the reliability of an electronic device upon bombardment by ionizing particles of claim 6, wherein: the electronic device is arranged in the center of the shell through a supporting structure.
8. The apparatus for protecting the reliability of an electronic device upon bombardment by ionizing particles of claim 6, wherein: the pressure of neutral gas filled in the shell is more than 1 atmosphere.
9. The apparatus for protecting the reliability of an electronic device upon bombardment by ionizing particles of claim 6, wherein: the lead is arranged at the bottom of the shell, one end of the lead is connected with an electronic device arranged in the shell, and the other end of the lead is connected with an external device positioned outside the shell.
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