CN109038214A - Vertical cavity surface emitting laser and preparation method thereof based on super surface - Google Patents
Vertical cavity surface emitting laser and preparation method thereof based on super surface Download PDFInfo
- Publication number
- CN109038214A CN109038214A CN201810838038.4A CN201810838038A CN109038214A CN 109038214 A CN109038214 A CN 109038214A CN 201810838038 A CN201810838038 A CN 201810838038A CN 109038214 A CN109038214 A CN 109038214A
- Authority
- CN
- China
- Prior art keywords
- surface texture
- vertical cavity
- reflection mirror
- gain media
- super surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of vertical cavity surface emitting lasers based on super surface texture comprising reflecting mirror, gain media and the narrowband upper reflector based on super surface texture under broadband；Broadband mirrors reflectance spectrum, gain media luminescent spectrum and super front-surface mirror narrowband reflection wavelength three overlapping, gain media is motivated by pumping source first, the narrowband reflection mirror by broadband mirrors and based on super surface texture constitutes vertical cavity and forms stimulated radiation light amplification again, and then realizes the Laser emission of vertical cavity surface.The invention also discloses a kind of production methods, comprising: the design and preparation of broadband mirrors on base material；The structure of gain media designs and epitaxial growth；Narrowband reflection mirror based on super table structure designs and prepares；Finally obtain the vertical cavity surface emitting laser based on super surface texture.The vertical-cavity surface emitting laser structure is simple and compact, and compatible with the processing technology of existing semiconductor laser, preparation process is simple, single longitudinal mode and stability is good.
Description
Technical field
The invention belongs to semiconductor laser device field of micro-Na manufacture, are based on super surface texture more particularly, to one kind
Vertical cavity surface emitting laser and preparation method thereof.
Background technique
Kenichi Tga professor in 1977 et al. has been put forward for the first time vertical cavity surface emitting laser (Vertical Cavity
Surface-Emitting Laser, VCSEL) concept, it is main to propose that thought is to shorten the length of chamber to obtain single longitudinal mode
The semiconductor laser of output improves the communication capacity of light.VCSEL is that light is emitted from perpendicular to semiconductor substrate surface direction
A kind of Semiconductor Laser, with single longitudinal mode, the angle of divergence is small, threshold value is low, modulation rate is high, circular symmetry hot spot, coupling
It is high-efficient, small in size, can On-wafer measurement, it is cheap many advantages, such as.Since phase early 1990s, VCSEL's is ground
Study carefully and developed rapidly, the VCSEL for different field is also constantly developed, and the VCSEL of different wave length is mainly wrapped
It is not close identical to include 630nm~670nm, 750nm~780nm, the development of 850nm, 980nm, 1310nm, wherein 850nm,
The VCSEL development of 980nm rapidly, has come into commercialization stage.Vertical cavity surface emitting laser VECSEL is excellent with its
Laser characteristics surpass optical clock, optical communication, laser radar, laser color are shown, high-rate laser prints, HIGH-DENSITY OPTICAL STORAGE
More and more fields such as fast laser, nonlinear optics obtain application.But traditional vertical cavity surface emitting laser is still deposited
The disadvantages of preparation process is complicated, light power is small, single mode stability is poor, especially for the vertical cavity of InP system long wavelength
Planar laser is faced with required distributed bragg reflector mirror (Distributed Bragg Reflection, DBR) logarithm mistake
The problem for more causing series resistance excessive.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of based on the vertical of super surface texture
Cavity surface emitting lasers and preparation method thereof, thus solve traditional vertical cavity surface emitting laser need to grow it is thicker it is upper,
Lower Bragg reflector layer, the technical problem that there are preparation processes is complicated, light power is small, single mode stability is poor etc..
To achieve the above object, according to one aspect of the present invention, a kind of vertical cavity based on super surface texture is provided
Surface-emitting laser, comprising: gain media is situated between positioned at the broadband mirrors of the gain media lower surface and positioned at the gain
The narrowband reflection mirror of matter upper surface；
Wherein, the reflectance spectrum of the broadband mirrors, the luminescent spectrum of the gain media and the narrowband reflection mirror
Reflectance spectrum three has overlapping relation；
The surface of the narrowband reflection mirror is the super surface texture with sub-wavelength, the periodic structure of salt free ligands effect；
The narrowband reflection mirror and the broadband mirrors form vertical cavity, to realize hanging down based on super surface texture
Straight cavity surface-emitting laser.
Preferably, the micro-nano graph array of several splicings, each micro-nano figure are prepared on the super surface texture
Shape array is that multiple identical micro-nano graph period arrangements are constituted, by the ruler for regulating and controlling micro-nano graph in the micro-nano graph array
Very little and the single micro-nano graph array of cyclomorphosis reflection wavelength.
Preferably, micro- resonance mechanism is realized to target wavelength in face of the narrowband reflection mirror by the super surface texture
Reflection, the transmission of non-targeted wavelength, and the luminous wave of the reflected wavelength range of the narrowband reflection mirror and the gain media
The excitation wavelength of the long and described vertical cavity surface emitting laser is overlapped.
Preferably, micro- resonance mechanism is realized to target wavelength in face of the narrowband reflection mirror by the super surface texture
Antireflective effect, and the emission wavelength of the anti-reflection wave-length coverage of the narrowband reflection mirror and the gain media and the vertical cavity
The excitation wavelength of surface-emitting laser is overlapped.
Preferably, the luminescent spectrum and the narrowband reflection mirror of the reflectance spectrum of the broadband mirrors, the gain media
Reflectance spectrum three have overlapping relation are as follows:
The emission wavelength of the gain media is Chong Die with the reflection wavelength of narrowband reflection mirror based on super surface texture,
And the emission wavelength of the gain media is in the reflection spectral limit of the broadband mirrors.
Preferably, at work, the gain media is motivated by pumping source, then by the broadband mirrors and
The vertical cavity that the narrowband reflection mirror is constituted forms stimulated radiation light amplification, and then realizes the Laser emission of vertical cavity surface,
It is final to realize the vertical cavity surface emitting laser based on super surface texture.
Preferably, the micro-nano graph arrangement in the micro-nano graph array is tetragonal lattice, hexagoinal lattice or quasi-crystalline lattice.
Preferably, the micro-nano graph is nano-pore, nano-pillar, nanometer bead, nano-rings or nanometer rods.
It is another aspect of this invention to provide that providing a kind of system of vertical cavity surface emitting laser based on super surface texture
Make method, comprising:
Successively epitaxial growth broadband mirrors and gain media active area obtain the first intermediate structure in substrate；
Target material layer is deposited in first intermediate structure, obtains the second intermediate structure；
Cleaning substrate and in second intermediate structure spin coating obtain photoresist layer；
Super surface texture domain is formed on the photoresist layer, and the super surface texture domain is transferred to the mesh
Material layer is marked, the narrowband reflection mirror layer based on super surface texture is obtained.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show
Beneficial effect:
1, laser structure of the invention is simple and compact, and preparation is simple, while having vertical-cavity surface-emitting, low
The advantages that threshold value, single longitudinal mode and stability are good.It can be widely applied to that fiber optic communication, optical storage, optical circulator, light is shown, laser is beaten
Print, laser ranging, laser radar, medical treatment and environmental monitoring etc..
2, the present invention can pass through the size and the single micro-nano graph of cyclomorphosis of micro-nano graph in regulation micro-nano graph array
The reflection wavelength of array, to realize the vertical cavity surface emitting laser of the different wave length based on super surface texture, first basis
The difference of different gains medium emission wavelength can design and prepare the broadband mirrors of different-waveband, and prepare and be based on super surface
The vertical-cavity surface-emitting of the narrowband reflection mirror of the different wave length of structure, the final achievable different wave length based on super surface texture swashs
Light device.
Detailed description of the invention
Fig. 1 is that a kind of structure of the vertical cavity surface emitting laser based on super surface texture provided in an embodiment of the present invention is shown
It is intended to；
Fig. 2 is that a kind of Prague broadband mirrors provided in an embodiment of the present invention reflect spectral line schematic diagram；
Fig. 3 is a kind of luminescence spectrum schematic diagram of gain media provided in an embodiment of the present invention；
Fig. 4 is a kind of reflection spectral line signal of narrowband reflection mirror based on super surface texture provided in an embodiment of the present invention
Figure；
Fig. 5 is a kind of production side of the vertical cavity surface emitting laser based on super surface texture provided in an embodiment of the present invention
Method flow diagram；
Fig. 6 is a kind of production work of the vertical cavity surface emitting laser based on super surface texture provided in an embodiment of the present invention
Skill schematic diagram；
Fig. 7 is a kind of schematic diagram of the narrowband reflection mirror based on super surface texture provided in an embodiment of the present invention；
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which:
1- substrate, 2- broadband reflection mirror layer, 3- gain media layer, 4- narrowband reflection mirror layer, 5- positive electronic beam photoresist
Layer.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
The present invention is a kind of special vertical cavity surface emitting laser based on super surface texture.Broadband mirrors reflection
Spectrum, gain media luminescent spectrum and super front-surface mirror narrowband reflection wavelength three overlapping, are first situated between to gain by pumping source
Matter is motivated, and population inversion is formed, and issues laser, then by broadband mirrors and based on the narrowband reflection mirror of super surface texture
The vertical cavity of composition carries out light amplification to it, and then realizes the Laser emission of vertical cavity surface.According to different broadband reflections
Specular reflection section, the gain media of different emission wavelength and different narrowband reflection specular reflections based on super surface texture are long
It is triangular to be mutually matched the vertical cavity surface emitting laser, it can be achieved that the different wave length based on super surface texture.Of the invention
Laser structure is simple and compact, and preparation is simple, while having vertical-cavity surface-emitting, Low threshold, single longitudinal mode and stabilization
The advantages that property is good.It can be widely applied to fiber optic communication, optical storage, optical circulator, light are shown, laser printing, laser ranging, laser thunder
It reaches, medical treatment and environmental monitoring etc..
Fig. 1 is that a kind of structure of the vertical cavity surface emitting laser based on super surface texture provided in an embodiment of the present invention is shown
Be intended to, by gain media, positioned at the broadband mirrors of gain media lower surface and positioned at gain media upper surface based on super table
The narrowband reflection mirror of face structure is constituted；
Wherein, the reflectance spectrum three tool of the reflectance spectrum of broadband mirrors, the luminescent spectrum of gain media and narrowband reflection mirror
Standby overlapping relation；The surface of narrowband reflection mirror is the super surface texture with sub-wavelength, the periodic structure of salt free ligands effect；It is narrow
Band reflecting mirror and broadband mirrors form vertical cavity, to realize the vertical cavity surface emitting laser based on super surface texture.
Wherein, the micro-nano graph array of several splicings, each micro-nano graph array are prepared on above-mentioned super surface texture
It is constituted for multiple identical micro-nano graph period arrangements, by regulating and controlling the size of micro-nano graph and week in the micro-nano graph array
Phase changes the reflection wavelength of single micro-nano graph array.
As shown in Figure 1,1 indicates substrate, 2 indicate Prague broadband mirrors, and 3 indicate gain media, and 4 indicate to realize
Narrowband reflection mirror layer based on super surface texture prepares the narrowband reflection mirror based on super surface texture.Fig. 2 is that Prague broadband is anti-
The reflection spectral line of mirror is penetrated, reflected waveband is 950nm~1020nm；Fig. 3 is the luminescence spectrum of gain media, and peak wavelength exists
Near 980nm；Fig. 4 is the reflection spectral line of the narrowband reflection mirror based on super surface texture, and reflection peak is in 980nm, the wave of three
Length has overlapping relation.
In embodiments of the present invention, which is vertical-cavity surface-emitting device, by designing and preparing broadband mirrors
Layer, gain media layer, the narrowband reflection mirror layer based on super surface texture, broadband mirrors reflectance spectrum, gain media luminescent spectrum
It is overlapped with super front-surface mirror narrowband reflection wavelength three, at work, gain media is motivated by pumping source first,
The narrowband reflection mirror by broadband mirrors and based on super surface texture constitutes vertical cavity and forms stimulated radiation light amplification again, into
And realize the Laser emission of vertical cavity surface.The excitation wavelength of the laser depend on narrowband reflection mirror based on super surface texture,
The collective effect of gain media and broadband mirrors three.
In embodiments of the present invention, super surface texture is with sub-wavelength period structure, and working principle is to work as light
Be capable of the sociability coherent oscillation of the super interior surface dipole of exciting media when vertical incidence, the Local oscillating of this light field and
Incident light interaction is to change the transmission and reflection characteristic of light.Sub-wavelength, salt free ligands effect are formed by designing and preparing
Micro-nano structure graphic array, micro- resonance mechanism can realize the reflection to target wavelength, non-targeted wave in the face of super surface texture
Long transmission forms narrowband reflection mirror.The target reflection wavelength of the narrowband reflection mirror and the emission wavelength of gain media overlap,
It is Chong Die with the excitation wavelength of laser.The narrowband reflection mirror layer based on super surface texture can be according to associated media design of material simultaneously
To have antireflective effect for target wavelength, and the emission wavelength of the anti-reflection wave-length coverage of target and gain media, laser is sharp
Penetrate overlapping wavelengths, wherein anti-reflection design is that have certain width, in the anti-reflection effect of target wavelength centered on target wavelength
Fruit is best.
In embodiments of the present invention, broadband mirrors can be the periodic stacks of the dielectric material by different refractivity
Bragg mirror is formed, realization is also possible to pass through to the high reflectance of target wave band to the antiradar reflectivity of non-targeted wave band
The total reflective mirror of metal material preparation or the broadband mirrors etc. of other materials preparation, are specifically implemented using which kind of mode present invention
Example does not do uniqueness restriction.It is required that broadband mirrors reflected waveband can cover the back wave of the reflecting mirror based on super surface texture
It is long.
In embodiments of the present invention, the graphic structure period arrangement of above-mentioned sub-wavelength period structure can be tetragonal
Lattice, hexagoinal lattice or quasi-crystalline lattice etc. specifically do not do uniqueness restriction using which kind of mode embodiment of the present invention.
In embodiments of the present invention, the graphic structure pattern of above-mentioned sub-wavelength period structure can be nano aperture,
Nano-pillar, nanometer bead, one of nano-rings or nanometer rods or several mixing composition, specifically using which kind of mode present invention
Embodiment does not do uniqueness restriction.
Fig. 5 is a kind of production stream of the vertical cavity surface emitting laser based on super surface texture provided in an embodiment of the present invention
Cheng Tu, comprising the following steps:
(1) design and preparation of broadband mirrors；
(2) design and preparation of gain media；
(3) design and preparation of the narrowband reflection mirror layer based on super surface texture.
As an alternative embodiment, metallo-organic compound can be used in the preparation of step (1) middle width strip reflecting mirror
Chemical gaseous phase deposition (Metal-organic Chemical Vapor Deposition, MOCVD), molecular beam epitaxy
(Molecular Beam Epitaxy, MBE), Metal Organic Vapor extension (Metal-organic Vapor Phase
Epitaxy, MOVPE), liquid phase epitaxy (Liquid Phase Epitaxy, LPE), chemical beam epitaxy (Chemical Beam
Epitaxy, CBE) and the growing technologies such as electron-beam evaporator (Electron Beam Evaporator, EBE) prepared, have
Body does not do uniqueness restriction using which kind of mode embodiment of the present invention.
As an alternative embodiment, in step (2) gain media preparation can be used MOCVD, MBE, MOVPE,
Prepared by the growing technologies such as LPE, CBE, and the glow peak wavelength of gain media is in the reflection spectral limit of broadband mirrors.
As an alternative embodiment, in step (3) based on super surface texture narrowband reflection mirror layer design with
Preparation, can pass through plasma enhanced chemical vapor deposition method (Plasma Enhanced Chemical Vapor first
Deposition, PECVD), Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor Deposition,
LPCVD) or the technologies such as CBE carry out the growth and preparation of associated materials layer, then pass through electron beam lithography, ultraviolet photolithographic or focusing
The photoetching techniques such as ion beam complete exposure, and inductively coupled plasma (Inductively can be used after development, fixing
Coupled Plasma, ICP), the lithographic techniques such as reactive ion etching (Reactive Ion Etching, RIE) complete etching.
According to based on different materials super surface narrowband reflection mirror and different super surface texture periods or structure size can realize not
Same narrowband reflection wavelength, it is Chong Die with the emission wavelength of gain media, and vertical cavity is formed with broadband mirrors, realize base
In the vertical cavity surface emitting laser of super surface texture.
In embodiments of the present invention, the production method of the above-mentioned vertical cavity surface emitting laser based on super surface texture, only
As a kind of referential production method for realizing the laser, it is not used to particularly limit and constrain the production of other feasibilities
Method.
Fig. 6 is a kind of vertical cavity surface emitting laser manufacture craft based on super surface texture provided in an embodiment of the present invention
Schematic diagram is described as follows:
In Fig. 6 shown in (a), can by MOCVD in substrate successively epitaxial growth broadband mirrors and gain media
Active area, layer 1 are substrate, and layer 2 is broadband mirrors, and layer 3 is gain media active layer.
In Fig. 6 shown in (b), on the basis of figure (a), silica and silicon nitride can successively be deposited by PECVD,
The narrowband reflection mirror layer that layer 4 forms for silica and silicon nitride.
In Fig. 6 shown in (c), on the basis of figure (b), cleaning substrate and spin coating electron beam resist, the present invention are implemented
Example preferably uses positive electronic beam photoresist ZEP520A, spin coating glue thickness 270nm, and is toasted under conditions of 180 DEG C using hot plate
3min completes solidification, and layer 5 is positivity electron beam resist layer.
In Fig. 6 shown in (d), on the basis of figure (c), by e-beam lithography in positive electronic beam photoresist layer
Form super surface texture domain.Electron beam exposure can use the EBPG 5000+ electron-beam lithography system of Vistec company, add
Fast voltage 100KV, electron beam exposure dosage are 220 μ C/cm2, setting beam spot scanning step is 4nm, selects electronic beam current
500pA.Sample is immersed into xylene solution the 70s that develops after the completion of exposure, is then immersed in aqueous isopropanol and is fixed 30s, take
With being dried with nitrogen after out.
In Fig. 6 shown in (e), on the basis of figure (d), is etched by ICP and super surface texture domain is transferred to nitridation
Silicon layer realizes the preparation of the narrowband reflection mirror based on super surface texture.Etching technics can use Oxford Instruments
Plasmalab System100 series inductance coupling plasma (ICP) etching machine, etch period 14s select gas SF6+
C4F8.It goes glue to remove the photoresist of etching residue using N-Methyl pyrrolidone NMP, is then placed in acetone and impregnates removal
Organic solvent is finally rinsed with deionized water, nitrogen gun drying.
Fig. 7 is the schematic diagram of the narrowband reflection mirror based on super surface texture, and (a) is based on the narrow of super surface texture in Fig. 7
Floor map with reflecting mirror, (b) is schematic illustration of the narrowband reflection mirror based on super surface texture, super surface in Fig. 7
Structure has sub-wavelength period structure, and working principle is when light field vertical incidence, can be in the super surface of exciting media
The sociability coherent oscillation of portion's dipole, the Local oscillating of this light field interact with incident light to change light transmission and
Reflection characteristic.The micro-nano structure graphic array of sub-wavelength, salt free ligands effect, the face of super surface texture are formed by designing and preparing
Interior micro- resonance mechanism can realize that the reflection to target wavelength, the transmission of non-targeted wavelength form narrowband reflection mirror.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of vertical cavity surface emitting laser based on super surface texture characterized by comprising gain media is located at institute
State the broadband mirrors of gain media lower surface and the narrowband reflection mirror positioned at the gain media upper surface；
Wherein, the reflection of the reflectance spectrum of the broadband mirrors, the luminescent spectrum of the gain media and the narrowband reflection mirror
Spectrum three has overlapping relation；
The surface of the narrowband reflection mirror is the super surface texture with sub-wavelength, the periodic structure of salt free ligands effect；
The narrowband reflection mirror and the broadband mirrors form vertical cavity, to realize the vertical cavity based on super surface texture
Surface-emitting laser.
2. laser according to claim 1, which is characterized in that be prepared with several splicings on the super surface texture
Micro-nano graph array, each micro-nano graph array is that multiple identical micro-nano graph period arrangements are constituted, by regulating and controlling institute
State the reflection wavelength of the size of micro-nano graph and the single micro-nano graph array of cyclomorphosis in micro-nano graph array.
3. laser according to claim 2, which is characterized in that the narrowband reflection mirror passes through the super surface texture
Micro- resonance mechanism realizes the reflection to target wavelength, the transmission of non-targeted wavelength, and the back wave of the narrowband reflection mirror in face
Long range is Chong Die with the excitation wavelength of the emission wavelength of the gain media and the vertical cavity surface emitting laser.
4. laser according to claim 2, which is characterized in that the narrowband reflection mirror passes through the super surface texture
Micro- resonance mechanism realizes the antireflective effect to target wavelength, and the anti-reflection wave-length coverage of the narrowband reflection mirror and the increasing in face
The overlapping of the excitation wavelength of the emission wavelength of beneficial medium and the vertical cavity surface emitting laser.
5. laser according to claim 3 or 4, which is characterized in that the reflectance spectrum of the broadband mirrors, the gain
The reflectance spectrum three of the luminescent spectrum of medium and the narrowband reflection mirror has overlapping relation are as follows:
The emission wavelength of the gain media is Chong Die with the reflection wavelength of narrowband reflection mirror based on super surface texture, and institute
The emission wavelength for stating gain media is in the reflection spectral limit of the broadband mirrors.
6. laser according to claim 5, which is characterized in that at work, by pumping source to the gain media
It is motivated, then excited radiation light is formed by the vertical cavity that the broadband mirrors and the narrowband reflection mirror are constituted and is put
Greatly, and then the Laser emission of vertical cavity surface is realized, it is final to realize the vertical cavity surface emitting laser based on super surface texture.
7. laser according to claim 2, which is characterized in that the micro-nano graph in the micro-nano graph array, which is arranged, is
Tetragonal lattice, hexagoinal lattice or quasi-crystalline lattice.
8. the laser as described in claim 2 or 7, which is characterized in that the micro-nano graph is nano-pore, nano-pillar, nanometer
Bead, nano-rings or nanometer rods.
9. a kind of production method of the vertical cavity surface emitting laser based on super surface texture characterized by comprising
Successively epitaxial growth broadband mirrors and gain media active area obtain the first intermediate structure in substrate；
Target material layer is deposited in first intermediate structure, obtains the second intermediate structure；
Cleaning substrate and in second intermediate structure spin coating obtain photoresist layer；
Super surface texture domain is formed on the photoresist layer, and the super surface texture domain is transferred to the target material
The bed of material obtains the narrowband reflection mirror layer based on super surface texture.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810838038.4A CN109038214B (en) | 2018-07-26 | 2018-07-26 | Vertical cavity surface emitting laser based on super surface and manufacturing method thereof |
| PCT/CN2018/114703 WO2020019574A1 (en) | 2018-07-26 | 2018-11-09 | Vertical-cavity surface-emitting laser employing metasurface structure, and manufacturing method for same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810838038.4A CN109038214B (en) | 2018-07-26 | 2018-07-26 | Vertical cavity surface emitting laser based on super surface and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109038214A true CN109038214A (en) | 2018-12-18 |
| CN109038214B CN109038214B (en) | 2020-01-03 |
Family
ID=64646827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810838038.4A Active CN109038214B (en) | 2018-07-26 | 2018-07-26 | Vertical cavity surface emitting laser based on super surface and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109038214B (en) |
| WO (1) | WO2020019574A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797747A (en) * | 2019-11-06 | 2020-02-14 | 安徽大学 | Laser transmitter based on all-dielectric super surface and parameter determination method |
| CN111817134A (en) * | 2020-09-03 | 2020-10-23 | 武汉云岭光电有限公司 | Vertical cavity surface emitting laser and manufacturing method thereof, coupling device and manufacturing method thereof |
| CN112117640A (en) * | 2020-11-02 | 2020-12-22 | 北京工业大学 | VCSEL (vertical cavity surface emitting laser) light splitting structure of substrate type diffractive optical element and preparation method |
| CN113345971A (en) * | 2021-05-27 | 2021-09-03 | 华中科技大学 | Super-surface resonance enhanced narrow-band photoelectric detector and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4335007A1 (en) * | 2021-05-05 | 2024-03-13 | NILT Switzerland GmbH | Manufacturing of surface emitting lasers including an integrated metastructure |
| DE102022101668A1 (en) * | 2022-01-25 | 2023-07-27 | Trumpf Photonic Components Gmbh | laser device |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0442002A1 (en) * | 1990-02-13 | 1991-08-21 | Siemens Aktiengesellschaft | Radiation producing semiconductor device |
| WO1997045903A2 (en) * | 1996-05-24 | 1997-12-04 | Btg International Limited | A semiconductor laser |
| US5956364A (en) * | 1997-10-02 | 1999-09-21 | Motorola, Inc. | Vertical cavity surface emitting laser with shaped cavity mirror and method of fabrication |
| US20060093008A1 (en) * | 2004-11-01 | 2006-05-04 | Seiko Epson Corporation | Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device |
| US20150117015A1 (en) * | 2013-10-31 | 2015-04-30 | Samsung Electronics Co., Ltd. | Apparatus for outputting directional light and light interconnection system having the same |
| CN102714395B (en) * | 2010-01-29 | 2015-06-10 | 惠普发展公司，有限责任合伙企业 | vertical-cavity surface-emitting lasers with non-periodic gratings |
| CN106058642A (en) * | 2016-06-29 | 2016-10-26 | 北京工业大学 | High-contrast-grating coupled-cavity narrow-spectral-line-width surface-emitting laser |
| CN106654858A (en) * | 2017-03-08 | 2017-05-10 | 长春理工大学 | Vertical cavity surface emitting laser with dual-layer sub-wavelength grating reflecting mirror |
| CN108521074A (en) * | 2018-05-21 | 2018-09-11 | 北京大学 | The method and laser of tunable single-mode laser are realized using asymmetric D BR structures |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106483594B (en) * | 2017-01-03 | 2019-02-22 | 济南大学 | Surpass colored filter and the application on surface and nanostructured metal film based on silicon |
| CN106918850B (en) * | 2017-03-09 | 2019-08-06 | 中国科学院半导体研究所 | A kind of super surface texture of flexibility |
| CN107275796B (en) * | 2017-06-23 | 2019-08-13 | 华中科技大学 | A kind of THz wave wave-absorber, preparation method and application |
| CN107257084A (en) * | 2017-08-07 | 2017-10-17 | 北京工业大学 | A kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser and preparation method thereof |
| CN108254945B (en) * | 2018-01-08 | 2021-01-26 | 东南大学 | Reflection type super-surface display device and color image display method |
-
2018
- 2018-07-26 CN CN201810838038.4A patent/CN109038214B/en active Active
- 2018-11-09 WO PCT/CN2018/114703 patent/WO2020019574A1/en active Application Filing
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0442002A1 (en) * | 1990-02-13 | 1991-08-21 | Siemens Aktiengesellschaft | Radiation producing semiconductor device |
| WO1997045903A2 (en) * | 1996-05-24 | 1997-12-04 | Btg International Limited | A semiconductor laser |
| US5956364A (en) * | 1997-10-02 | 1999-09-21 | Motorola, Inc. | Vertical cavity surface emitting laser with shaped cavity mirror and method of fabrication |
| US20060093008A1 (en) * | 2004-11-01 | 2006-05-04 | Seiko Epson Corporation | Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device |
| CN102714395B (en) * | 2010-01-29 | 2015-06-10 | 惠普发展公司，有限责任合伙企业 | vertical-cavity surface-emitting lasers with non-periodic gratings |
| US20150117015A1 (en) * | 2013-10-31 | 2015-04-30 | Samsung Electronics Co., Ltd. | Apparatus for outputting directional light and light interconnection system having the same |
| CN106058642A (en) * | 2016-06-29 | 2016-10-26 | 北京工业大学 | High-contrast-grating coupled-cavity narrow-spectral-line-width surface-emitting laser |
| CN106654858A (en) * | 2017-03-08 | 2017-05-10 | 长春理工大学 | Vertical cavity surface emitting laser with dual-layer sub-wavelength grating reflecting mirror |
| CN108521074A (en) * | 2018-05-21 | 2018-09-11 | 北京大学 | The method and laser of tunable single-mode laser are realized using asymmetric D BR structures |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797747A (en) * | 2019-11-06 | 2020-02-14 | 安徽大学 | Laser transmitter based on all-dielectric super surface and parameter determination method |
| CN110797747B (en) * | 2019-11-06 | 2020-09-01 | 安徽大学 | Laser transmitter based on all-dielectric super surface and parameter determination method |
| CN111817134A (en) * | 2020-09-03 | 2020-10-23 | 武汉云岭光电有限公司 | Vertical cavity surface emitting laser and manufacturing method thereof, coupling device and manufacturing method thereof |
| CN112117640A (en) * | 2020-11-02 | 2020-12-22 | 北京工业大学 | VCSEL (vertical cavity surface emitting laser) light splitting structure of substrate type diffractive optical element and preparation method |
| CN113345971A (en) * | 2021-05-27 | 2021-09-03 | 华中科技大学 | Super-surface resonance enhanced narrow-band photoelectric detector and preparation method thereof |
| CN113345971B (en) * | 2021-05-27 | 2022-08-09 | 华中科技大学 | Super-surface resonance enhanced narrow-band photoelectric detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109038214B (en) | 2020-01-03 |
| WO2020019574A1 (en) | 2020-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109038214A (en) | Vertical cavity surface emitting laser and preparation method thereof based on super surface | |
| CN108988123B (en) | Monolithic integrated surface emitting semiconductor laser based on super surface and preparation method thereof | |
| CN107768979B (en) | Extension integrates high contrast grating external cavity emitting laser | |
| TW508883B (en) | Semiconductor or solid-state laser having an external fiber cavity | |
| JP5923555B2 (en) | A compact multimode laser with fast wavelength scanning. | |
| CN106058642B (en) | The narrow spectral line width surface-emitting laser of high contrast grating coupler | |
| TWI569549B (en) | Laser structure, semiconductor laser structure and method of operating a laser structure | |
| TWI342646B (en) | ||
| JP3637081B2 (en) | Method and apparatus for optimizing the output characteristics of a tunable external cavity laser | |
| Warren et al. | On‐axis far‐field emission from two‐dimensional phase‐locked vertical cavity surface‐emitting laser arrays with an integrated phase‐corrector | |
| US9158057B2 (en) | Semiconductor light source free from facet reflections | |
| JP2008529068A5 (en) | ||
| EP1265327A2 (en) | Vertical cavity surface emitting laser | |
| Danielewicz et al. | Hybrid output mirror for optically pumped far infrared lasers | |
| CN103650264A (en) | Surface emitting laser element and atomic oscillator | |
| JP2013229580A (en) | Surface emitting laser incorporating third reflector | |
| Shchukin et al. | Tilted wave lasers: A way to high brightness sources of light | |
| JP2004520709A (en) | Compact ultrafast laser | |
| US20040008742A1 (en) | Mode-locked laser using a mode-locking wavelength selective reflector | |
| Borgentun et al. | Optimization of a broadband gain element for a widely tunable high-power semiconductor disk laser | |
| WO2020019573A1 (en) | Narrow linewidth external cavity laser based on metasurface narrowband reflector | |
| CN113363798B (en) | Adjustable high-optical-efficiency broadband multi-longitudinal-mode Raman microchip laser | |
| US20070201531A1 (en) | Optically pumped semiconductor laser device | |
| Burnham et al. | Low‐divergence beams from grating‐coupled composite guide heterostructure GaAlAs diode lasers | |
| CN107104362B (en) | Semiconductor laser diode and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |