CN109033926A - Fingerprint imaging mould group and electronic equipment - Google Patents
Fingerprint imaging mould group and electronic equipment Download PDFInfo
- Publication number
- CN109033926A CN109033926A CN201710429689.3A CN201710429689A CN109033926A CN 109033926 A CN109033926 A CN 109033926A CN 201710429689 A CN201710429689 A CN 201710429689A CN 109033926 A CN109033926 A CN 109033926A
- Authority
- CN
- China
- Prior art keywords
- light
- filter layer
- mould group
- fingerprint imaging
- imaging mould
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/1341—Sensing with light passing through the finger
Landscapes
- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
A kind of fingerprint imaging mould group and electronic equipment, the fingerprint imaging mould group includes: light source；Sensing face is contacted with part to be imaged, and the incident light for generating the light source forms the reflected light for carrying finger print information；Part formation interference light to be imaged described in environment light transmission；Imaging sensor carries out photoelectric conversion to the interference light and the reflected light, and obtains fingerprint image according to the reflected light；Filter layer, between the sensing face and described image sensor, for filtering out at least partly described interference light.The setting of the filter layer can take into account the improvement of integrated level and signal-to-noise ratio, can effectively improve the performance of the fingerprint imaging mould group.
Description
Technical field
The present invention relates to fingerprint imaging field, in particular to a kind of fingerprint imaging mould group and electronic equipment.
Background technique
Fingerprint identification technology collects the fingerprint image of human body by fingerprint imaging sensor, then with fingerprint recognition system
In have fingerprint imaging information be compared, to realize identification.It is unique due to the convenience that uses and somatic fingerprint
Property, fingerprint identification technology has been widely used in every field, such as: the field of safety check such as public security bureau, customs, the gate inhibition system of building
System and the consumer product areas such as PC and mobile phone etc..
The imaging mode of imaging modules employed in fingerprint identification technology has optical profile type, condenser type, ultrasonic type etc. a variety of
Technology.One of which is the fingerprint image that human body is acquired by optical imagery mould group.The work of optical fingerprint imaging modules is former
Reason: the finger of people presses when on the cover sheet of optical fingerprint imaging modules, and the light that light source issues forms incident light；It is incident
Light through after imaging sensor (Sensor) and cover sheet to the interface for projecting cover sheet and finger, in finger and protection
Reflection and refraction occur at the position that cover board is in contact；The reflected light is acquired by imaging sensor, by the reflected light
Optical signal is converted to electric signal, and the fingerprint image of finger can be obtained after processing.
But the fingerprint imaging mould group of the prior art can only acquire fingerprint image under suitable illumination condition, when environment light
When too strong, existing the obtained fingerprint image quality of fingerprint imaging mould group is poor, or even can not obtain fingerprint image.
Summary of the invention
Problems solved by the invention is to provide a kind of fingerprint imaging mould group and electronic equipment, to realize under strong environment light condition
Fingerprint image acquisition.
To solve the above problems, the present invention provides a kind of fingerprint imaging mould group, comprising:
Light source；Sensing face is contacted with part to be imaged, and the incident light formation for generating the light source carries finger print information
Reflected light；Part formation interference light to be imaged described in environment light transmission；Imaging sensor, to the interference light and the reflected light
Photoelectric conversion is carried out, and fingerprint image is obtained according to the reflected light；Filter layer, is located at the sensing face and described image senses
Between device, for filtering out at least partly described interference light.
Optionally, the thickness of the filter layer is in 50nm to 15000nm range.
Optionally, the minimum value that the filter layer filters out optical wavelength is greater than the maximum value of the lambda1-wavelength.
Optionally, the lambda1-wavelength range is in 400nm to 480nm range；The wave of the filtered out light of filter layer
Long range is in 680nm to 850nm range.
Optionally, the lambda1-wavelength range is in 400nm to 480nm range；The wave of the filtered out light of filter layer
Long range is in 700nm to 810nm range.
Optionally, the filter layer filters out feux rouges or infrared light；The incident light is ultramarine light.
Optionally, the minimum value that the filter layer filters out optical wavelength is greater than the maximum value of the lambda1-wavelength range, or
The maximum value that filter layer described in person filters out optical wavelength is less than the minimum value of the lambda1-wavelength range.
Optionally, the material of the filter layer includes ink.
Optionally, the material of the filter layer further includes infrared absorbing agents.
Optionally, the filter layer is lamination plated film.
Optionally, the filter layer includes the silicon oxide layer and titanium oxide layer being arranged alternately.
Optionally, in the filter layer the sum of the silicon oxide layer number of plies and the titanium oxide layer number of plies in 5 to 60 ranges.
Optionally, the thickness of the silicon oxide layer is in 8nm to 200nm range.The thickness of the titanium oxide layer is arrived in 8nm
Within the scope of 200nm.
Optionally, the filter layer is formed by way of silk-screen, spraying or plated film.
Optionally, the spectral region of described image sensor is less than or equal to 810nm.
Optionally, described image sensor is between the light source and the sensing face；Described in the filter layer covering
Image sensor surface.
Optionally, described image sensor includes the pixel unit being arranged in array, and the pixel unit includes transparent area
The shading region and；Through-hole is provided in the filter layer, the through-hole is corresponding with the pixel unit light transmission zone position.
Optionally, described image sensor includes the pixel unit being arranged in array, and the pixel unit includes transparent area
The shading region and；The filter layer covers the transparent area and the shading region.
Correspondingly, the present invention also provides a kind of electronic equipment, comprising: fingerprint imaging mould group of the invention.
Compared with prior art, technical solution of the present invention has the advantage that
The filter layer can part to be imaged described in filtering environmental light transmission and the interference light that is formed, therefore the filter layer
Setting can be effectively reduced influence of the environment light to the fingerprint imaging mould group image quality, strong environment light can be effectively improved
Under the conditions of the fingerprint imaging mould group image quality, be conducive to the performance for improving the fingerprint imaging mould group；And the filter
Photosphere between the sensing face and described image sensor, therefore the setting of the filter layer not will increase the fingerprint at
As the volume of mould group, so the setting of the filter layer can change under the premise of guaranteeing the fingerprint imaging mould group integrated level
Kind signal-to-noise ratio, is conducive to improve imaging effect of the fingerprint imaging mould group under intense light conditions.
In optinal plan of the present invention, the minimum value that the filter layer filters out optical wavelength is greater than the maximum of the lambda1-wavelength
Value；The filter layer filter out optical wavelength minimum value be greater than the lambda1-wavelength range maximum value or the filter layer
The maximum value for filtering out optical wavelength is less than the minimum value of the lambda1-wavelength range；That is, the lambda1-wavelength range
It is filtered out other than optical wavelength range in the filter layer, i.e., the described lambda1-wavelength range and the filter layer filter out optical wavelength range
Have no overlapping region.This way can be effectively reduced influence of the filter layer to the incident light and the reflected light, energy
It is enough to filter out the interference light in the case where not influencing incident light and reflection light transmission, be conducive to improve signal-to-noise ratio.
In optinal plan of the present invention, the fingerprint imaging mould group is ultrathin type fingerprint imaging mould group, i.e. described image senses
Device is between the light source and the sensing face；The filter layer covers described image sensor surface.The filter layer
The volume that will increase the fingerprint imaging mould group is set not, so can be in the premise for guaranteeing the fingerprint imaging mould group integrated level
Under, improve the performance of the fingerprint imaging mould group.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of fingerprint imaging mould group；
Fig. 2 is the schematic diagram of the section structure of one embodiment of fingerprint imaging mould group of the present invention；
Fig. 3 is the optical path signal that filter layer 140 described in the group embodiment of fingerprint imaging mould shown in Fig. 2 filters out the interference light
Figure；
Fig. 4 is the schematic diagram of filter layer optical transmission spectra in another embodiment of the present invention；
Fig. 5 is the structural schematic diagram of fingerprint imaging mould group another embodiment of the present invention；
Fig. 6 is the enlarged diagram of structure in box 231 in the group embodiment of fingerprint imaging mould shown in Fig. 5；
Fig. 7 be in the group embodiment of fingerprint imaging mould shown in Fig. 6 filter layer 240 along the overlooking structure diagram in the direction arrow A.
Specific embodiment
It can be seen from background technology that there are lower the obtained fingerprint images of strong environment light condition for fingerprint imaging mould group in the prior art
As second-rate, or even the problem of fingerprint image can not be obtained.Now in conjunction with a kind of original of its problem of the structure of fingerprint imaging mould group
Cause:
With reference to Fig. 1, a kind of the schematic diagram of the section structure of fingerprint imaging mould group is shown.
As shown in Figure 1, the fingerprint imaging mould group includes: light source 11, for generating incident light 14；Sensing face 13, is used for
Receive the touch of finger 10, the incident light 14 forms the reflected light 15 for carrying finger print information in the sensing face 13；Figure
As sensor 12, acquires the reflected light 15 and fingerprint image is obtained according to the reflected light 15.
When finger 10 is by pressing against in the sensing face 13, it is transmitted through 14 part of the incident light in the sensing face 13
The reflected light 15 can be reflected to form；And part can occur refraction and be emitted from the sensing face 13.Due to 10 surface of finger
Oil layer is distributed with, the refractive index of oil layer is greater than the refractive index of air；So fingerprint ridge part oil layer can be with the sensing
Face 13 is in contact, and the incident light 14 reflected is more, therefore the light intensity of formed reflected light 15 is weaker；Fingerprint valley amount of grease
Layer will not be in contact with the sensing face 13, the incident light 14 reflected is less, thus the light intensity of formed reflected light 15 compared with
By force；Thus described image sensor 12 can obtain the fingerprint image according to the distribution of collected 15 light intensity of reflected light
Picture.
But as shown in Figure 1,21 light intensity of environment light is larger when acquiring fingerprint under the conditions of certain environment light；Part institute
It states environment light 21 and can transmit finger 10 and be transmitted through in the fingerprint imaging mould group, form interference light 22；Described image sensor 12
It is excessive that noise signal will cause to the acquisition of the interference light 22, to increase signal-to-noise ratio, influence the matter of obtained fingerprint image
Amount.
Specifically, the light intensity that described image sensor 12 acquires interference light 22 is generally uniform, so the interference
The acquisition of light 22 can cause obtained fingerprint image contrast to decline, to cause the degeneration of fingerprint image quality.When the ring
Light 21 light intensity in border is excessive, and 22 light intensity of the interference light are excessive, then it is excessive to be likely to result in noise signal, so as to cause that can not obtain
The problem of fingerprint image.
In the prior art, environment light is too strong in order to prevent, reduce it is described interference light light intensity, usually by the fingerprint at
As the sensing face of mould group is set in a groove, environment light is blocked by the side wall of the groove, or the fingerprint at
As mould group sensing face on hood is set, the environment light is blocked by the hood, to drop low ambient light light intensity, is dropped
Low interference light light intensity.
But this way would generally make the volume of the fingerprint imaging mould group excessive, will affect the fingerprint imaging mould group
Integrated level；Especially for ultrathin type fingerprint imaging mould group as shown in Figure 1, this way is simultaneously not suitable for.
To solve the technical problem, the present invention provides a kind of fingerprint imaging mould group, by the sensing face and described
Filter layer is set between imaging sensor, part to be imaged described in filtering environmental light transmission and the interference light that is formed, to effectively drop
Influence of the low ambient light to the fingerprint imaging mould group image quality, improves the fingerprint imaging mould group under strong environment light condition
Image quality.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
With reference to Fig. 2, the schematic diagram of the section structure of one embodiment of fingerprint imaging mould group of the present invention is shown.
As shown in Fig. 2, the fingerprint imaging mould group includes:
Light source 110；Sensing face 120 is contacted with part 100 to be imaged, and 111 shape of incident light for generating the light source 110
At the reflected light 112 for carrying finger print information；Environment light 160 transmits the part to be imaged 100 and forms interference light 161；Image passes
Sensor 130, by acquiring the reflected light 112 to obtain fingerprint image；Filter layer 140 is located at the sensing face 120 and described
Between imaging sensor 130, for filtering out the interference light 161.
The filter layer 140 can filtering environmental light 160 transmit the part to be imaged 100 and the interference light 161 that is formed, because
The setting of this filter layer 140 can be effectively reduced influence of the environment light 160 to the fingerprint imaging mould group image quality, energy
It is enough effectively improved the image quality of the fingerprint imaging mould group under the conditions of strong environment light 160, is conducive to improve the fingerprint imaging
The performance of mould group；And the filter layer 140 is between the sensing face 120 and described image sensor 130, therefore described
The setting of filter layer 140 not will increase the volume of the fingerprint imaging mould group, so the setting of the filter layer 140 can protected
Under the premise of demonstrate,proving the fingerprint imaging mould group integrated level, improves signal-to-noise ratio, be conducive to improve the fingerprint imaging mould group in strong light
Under the conditions of imaging effect.
The light source 110 is for generating incident light 111.
In the present embodiment, the light source 110 be area source, including light emitting diode (not shown) and be located at the hair
The light guide plate (not shown) of optical diode side.The light emitting diode is used to form initial light；The light emitting diode
Generated initial light is projected into the light guide plate, reflects to form the incident light of light distribution more evenly through the light guide plate
111.It sets the light source 110 to the way of area source, can effectively improve the uniformity of the incident light 111, it can
The incident angle for effectively reducing incident light 111 is conducive to the quality for improving obtained fingerprint image.
In other embodiments of the invention, the light source may be the light source of the other forms such as linear light source or point light source.Example
Such as, the light source can be single light emitting diode.
In the present embodiment, the incident light 111 is ultramarine light.Specifically, the wavelength of the incident light 111 is arrived in 400nm
Within the scope of 480nm.In other embodiments of the invention, the incident light may be red light, orange-colored light, sodium yellow, green light,
The light of other colors such as cyan light, blue light or purple light.In other embodiments of the invention, the incident light is also possible to red
Outer light or ultraviolet light.
The sensing face 120 makes the formation of incident light 111 carry fingerprint letter for contacting with part 100 to be imaged
The reflected light 112 of breath.
Specifically, the part 100 to be imaged is finger in the present embodiment；The pressing of part to be imaged 100 is in the sensing
After on face 120, the incident light being transmitted through in the sensing face 120 can occur to reflect and reflect, and carry finger to be formed
The reflected light 112 of line information.
In the present embodiment, the fingerprint imaging mould group further include: protective layer 150, for protect the fingerprint imaging mould
The hardware device of group.The sensing face 120 is the surface of the protective layer 150.Specifically, the protective layer 150 is glass cover
The film layers such as plate (Cover glass) or screen glass.
As shown in Fig. 2, when part 100 (in the present embodiment, the part 100 to be imaged is finger) pressing to be imaged is in the sense
When on survey face 120, environment light 160 will form interference light 161 after transmiting the part 100 to be imaged, and the interference light 161 is thrown
It is incident upon in the sensing face 120.
In the present embodiment, the environment light 160 is sunlight, i.e., it is that 400nm is arrived that the described environment light 160, which is wave-length coverage,
The continuous light of 1200nm.And the part to be imaged 100 is finger, preferably penetrates and transmits since human body has infrared light
Effect, so the environment light 160 of the transmission part 100 to be imaged is mainly feux rouges or infrared light, i.e., the described interference light 161
Predominantly wave-length coverage be 700nm to 1064nm feux rouges or infrared light.
Described image sensor 130 is converted for acquiring the reflected light 112, and by the optical signal of the reflected light 112
For electric signal, to obtain the fingerprint image.
In the present embodiment, the fingerprint imaging mould group is ultrathin fingerprint imaging mould group, and described image sensor 130 is located at
Between the sensing face 120 and the light source 110；It is projected to after the transmission of incident light 111 described image sensor 130 described
In sensing face 120.
Specifically, the fingerprint imaging mould group further includes protective layer 150.The protective layer 150 is located at described image sensing
On device 130.Specifically, the sensing face 120 is the protective layer 150 backwards to the surface of described image sensor 130.
In the present embodiment, the spectral region of described image sensor 130 is less than or equal to 810nm, that is to say, that described
Light of the imaging sensor 130 to wavelength less than or equal to 810nm has responding ability, i.e. described image sensor 130 can be right
Light of the wavelength less than or equal to 810nm carries out photoelectric conversion.Since the light of 810nm has been near infrared light, and the incidence
Light 111 is ultramarine light, central wavelength 465nm, therefore set 810nm's for the spectral region of described image sensor 130
Way can make the spectral region of described image sensor 130 cover the spectral region of the incident light 111, can be improved institute
Sensitivity of the imaging sensor 130 to the incident light 111 is stated, the quality for improving the fingerprint image is conducive to.
Described image sensor 130 includes the pixel unit (not indicating in figure) being arranged in array, the pixel unit packet
Include transparent area and shading region.The pixel unit of the transparent area is for transmiting the incident light 111；The pixel list of the shading region
Semiconductor devices is formed in member, to reduce the incident light of transmission described image sensor 130 to the semiconductor devices
Dysgenic possibility can be caused, the incident light of transmission described image sensor 130 is inhibited to obtain described image sensor 130
The interference of fingerprint image.
As shown in Fig. 2, the interference light 161 for being projected to the sensing face 120 can transmit the sensing face 120, it is transmitted through institute
It states on imaging sensor 130, to be acquired by described image sensor 130, becomes noise signal, so that described image can be caused
The decline of the obtained fingerprint image contrast of sensor 130, influences the quality of the fingerprint image.
The filter layer 140 at least filters out part institute between the sensing face 120 and described image sensor 130
It states interference light 161 and is conducive to the raising of fingerprint image quality so as to improve the contrast of obtained fingerprint image.
The filter layer 140 can filtering environmental light 160 transmit the part to be imaged 100 and the interference light 161 that is formed, because
The setting of this filter layer 140 can be effectively reduced influence of the environment light 160 to the fingerprint imaging mould group image quality, energy
It is enough effectively improved the image quality of the fingerprint imaging mould group under strong environment light condition, is conducive to improve the fingerprint imaging mould group
Performance.
And the filter layer 140 is between the sensing face 120 and described image sensor 130.Specifically, described
Sensing face 120 is the protective layer 150 backwards to the surface of described image sensor 130, thus the filter layer 140 cover it is described
Protective layer 150 is towards the surface of described image sensor 130.Therefore the setting of the filter layer 140 not will increase the fingerprint
The volume of imaging modules, so the setting of the filter layer 140 can be in the premise for guaranteeing the fingerprint imaging mould group integrated level
Under, improve signal-to-noise ratio, is conducive to improve imaging effect of the fingerprint imaging mould group under intense light conditions.
In the present embodiment, the fingerprint imaging mould group is ultrathin type fingerprint imaging mould group, i.e. described image sensor 130
Between the light source 110 and the sensing face 120；The filter layer 140 covers 130 surface of described image sensor.It is this
Setting method not will increase the volume of the fingerprint imaging mould group, so can guarantee the fingerprint imaging mould group integrated level
Under the premise of, improve the performance of the fingerprint imaging mould group.
In the present embodiment, the thickness of the filter layer 140 is in 50nm to 15000nm range.The thickness of the filter layer 140
If degree is too big, it is unfavorable for improving the incident light 111 and the reflected light 112 transmits the light transmittance of the filter layer 140, no
Conducive to the influence of the filter layer 140 to the incident light 111 and the reflected light 112 is reduced, be also unfavorable for the fingerprint at
As the control of mould group thickness, the raising of integrated level；If the thickness of the filter layer 140 is too small, the filter may be will affect
Photosphere 140 is unfavorable for inhibiting noise signal strength to the filtration result of the interference light 161, be unfavorable for improving the fingerprint at
As the signal-to-noise ratio of mould group, it is unfavorable for the improvement of fingerprint image quality.
In the present embodiment, the incident light 111 is ultramarine light；The interference light 161 is mainly feux rouges or infrared light；So
The filter layer 140 is for filtering out feux rouges or infrared light, to reduce the filter layer 140 to the incident light 111 and described anti-
Penetrate the influence of light 112.
In the present embodiment, the wavelength of the incident light 111 is in 400nm to 480nm range；The interference light 161 is main
The feux rouges or infrared light for being 700nm to 1064nm for wave-length coverage.So the minimum value that the filter layer 140 filters out optical wavelength is big
In the maximum value of the lambda1-wavelength, so 111 wave-length coverage of the incident light filters out optical wavelength model in the filter layer 140
Other than enclosing, i.e., described 111 wave-length coverage of incident light and the filter layer 140 filter out optical wavelength range and have no overlapping region.
While this way can make the filter layer 140 effectively filter out interference light 161, the filter layer 140 is reduced
Influence to the incident light and the reflected light can not influence what the incident light 111 and the reflected light 112 transmitted
In the case of, the interference light 161 is filtered out, is conducive to improve signal strength, inhibits noise intensity, be conducive to the improvement of signal-to-noise ratio,
Be conducive to the quality for further improving the fingerprint image.Specifically, the wave-length coverage of the filtered out light of the filter layer 140 exists
In 680nm to 850nm range.
It should be noted that in the present embodiment, the spectral region of described image sensor 130 be less than or equal to 810nm,
That is light of the described image sensor 130 for wave-length coverage greater than 810nm does not have respective capabilities, not can be carried out photoelectric conversion,
So the light for wavelength greater than 850nm will not be acquired by described image sensor 130, i.e., it will not be to the fingerprint image
Acquisition interferes.
Specifically, the filter layer 140 is lamination plated film, the interference light 161 is filtered out by the principle of interference of light wave.Knot
It closes and refers to Fig. 3, show the optical path that filter layer 140 described in the group embodiment of fingerprint imaging mould shown in Fig. 2 filters out the interference light
Schematic diagram.
The filter layer 140 includes the silicon oxide layer 141 and titanium oxide layer 142 being arranged alternately.As shown in figure 3, light exists
It when transmiting the filter layer 140, can be reflected in the interface of the silicon oxide layer 141 and the titanium oxide layer 142, institute is anti-
Constructive interference may occur between the light 140f penetrated, to improve the light intensity of institute reflection light 140f, make more energy
It is reflected by the filter layer 140, reduces the transmissivity of transmitted ray；Cancellation may also can occur between the light 140f reflected
Interference, to reduce the light intensity of institute reflection light 140f, transmits more energy by the filter layer 140, improves transmitted light
The transmissivity of line.
The thickness of the wavelength of light, the thickness of silicon oxide layer 141 and titanium oxide layer 142 determines reflected light 140f
Between be that constructive interference or destructive interference occurs；So passing through the thickness of the silicon oxide layer 141 and the thickness of titanium oxide layer 142
The setting of degree keeps the light reflectivity within the scope of specific band higher, and transmissivity is lower；Make the light transmission in particular range of wavelengths
It is higher, and reflectivity is lower；To enable the filter layer to filter out the light in particular range of wavelengths.
In order to make the filter layer 140 can be realized filtering out for the interference light 161, and reduce the filter layer 140
Influence to the incident light 111 and the reflected light 112；In the present embodiment, in the filter layer 140, the silicon oxide layer
Thickness in 8nm to 200nm range；The thickness of the titanium oxide layer is in 8nm to 200nm range.The silicon oxide layer and
The too large or too small wave band that can all influence the filtered out light of the filter layer 140 of the thickness of the titanium oxide layer, so as to
The filter layer 140 be will affect to the filtration result of the interference light 161, it is also possible to will increase the filter layer 140 to described
The influence of incident light 111 and the reflected light 112, and then influence the quality of obtained fingerprint image.
In addition, light is reflected in the interface of the silicon oxide layer 141 and the titanium oxide layer 142, so described
The sum of the number of plies of silicon oxide layer 141 and the number of plies of the titanium oxide layer 142 are in 5 to 60 ranges described in filter layer 140.It is described
If the sum of the number of plies of silicon oxide layer 141 and the number of plies of the titanium oxide layer 142 described in filter layer 140 are too small, may
The filter layer 140 is influenced to the filtration result of the interference light 161, is unfavorable for providing the quality of fingerprint image；The optical filtering
If the number of plies of silicon oxide layer 141 described in layer 140 and the sum of the number of plies of the titanium oxide layer 142 are excessive, it is unfavorable for described
The transmission of incident light 111 and the reflected light 112, it is also possible to be unfavorable for the raising of fingerprint image quality, and the silica
The number of plies of layer 141 and the number of plies of the titanium oxide layer 142 are excessive, will increase the thickness of the filter layer 140, are unfavorable for integrated level
Control.
For example, the light source is the light source that wavelength is 465nm in some embodiments of the invention, i.e., in the described incident light
The a length of 465nm of cardiac wave；It is taken into account to realize that interference light filters out and incidence is light transmissive, the thicknesses of layers of the filter layer exists
1500nm or so, wherein the sum of the silicon oxide layer number of plies and the titanium oxide layer number of plies are 21 layers.In this case, the filter layer is to entering
The transmitance for penetrating light can achieve 95% or more.
It should be noted that 111 wave-length coverage of incident light is in 400nm to 480nm range in the present embodiment；Institute
The wave-length coverage of the filtered out light of filter layer 140 is stated in 680nm to 850nm range.But this setup is only an example.
In other embodiments of the invention, the lambda1-wavelength range is in 400nm to 480nm range；The filtered out light of filter layer
Wave-length coverage in 700nm to 810nm range.Reduce the filter layer by the design of the filter layer film layer structure to be filtered
Except the wave-length coverage of light, so as to which the probability that the filter layer influences the incident light and the reflected light is effectively reduced,
Be conducive to the raising of the fingerprint image quality.
In the present embodiment, the filter layer 140 is the lamination plated film that silicon oxide layer, titanium oxide layer are arranged alternately；So institute
Stating filter layer 140 can be formed by way of the plated films such as deposition, sputtering or vapor deposition.
In the present embodiment, described image sensor 130 includes the pixel unit (not indicating in figure) being arranged in array, described
Pixel unit includes transparent area and shading region.As shown in Fig. 2, the filter layer 140 covers the fingerprint imaging mould group pixel list
The transparent area of member and the shading region are provided with filter layer on the transparent area of that is, described pixel unit and the shading region
140.This way can make the filter layer 140 sufficiently filter out the interference light 161, to improve the comparison of fingerprint image
Degree.
In the present embodiment, the minimum value that the filter layer 140 filters out optical wavelength is greater than the maximum value of the lambda1-wavelength.
In other embodiments of the invention, the minimum value that the filter layer filters out optical wavelength is greater than the maximum of the lambda1-wavelength range
The maximum value that value or the filter layer filter out optical wavelength is less than the minimum value of the lambda1-wavelength range.
Specifically, showing the schematic diagram of filter layer optical transmission spectra in another embodiment of the present invention with reference to Fig. 4.
Wherein, horizontal axis indicates the wavelength of light；The transmitance of longitudinal axis mark filter layer.Figure line 401 indicates corresponding wavelength light
Line penetrates the transmitance of filter layer.As shown in figure 4, the filter layer is less than 730nm and wavelength greater than 800nn's for wavelength
Light penetration is lower, i.e., the described filter layer can be such that wavelength is less than produced by the light of 730nm and wavelength greater than 800nn
Reflected light between constructive interference occurs, to improve the light intensity of formed reflected light, make more energy by the filter layer
Reflection, to reduce the transmissivity of light of the wavelength less than 730nm and wavelength greater than 800nn.
Therefore the filter layer can prevent wavelength to be less than the light transmission of 730nm and wavelength greater than 800nn, can subtract
The transmission of light is interfered to be conducive to the raising of fingerprint image to be conducive to improve the contrast of obtained fingerprint image less.
In addition, as shown in figure 4, setting by silicon oxide layer thickness and the number of plies and the titanium oxide layer thickness and the number of plies
Set, the filter layer to wave-length coverage 730nm to 790nm light transmitance with higher, that is to say, that the optical filtering
Layer can make wave-length coverage that destructive interference occur between the reflected light caused by the light of 730nm to 790nm, to reduce institute
The light intensity for forming reflected light, makes more energy be transmissive to the filter layer, to improve wave-length coverage in 730nm to 790nm
Light transmissivity.
In the present embodiment, the light source is the light source of 770nm, i.e., the central wavelength that the described light source generates incident light is
770nm；Therefore the filter layer can also improve the transmissivity of the incident light and the reflected light formed by the incident light, from
And it can be improved signal strength.
So by the design to internal structure, the filter layer can play the role of to the light of specific band it is anti-reflection,
And increasing reaction is played to the light of remaining wave band, so as to effectively improve the transmission of the incident light and the reflected light
Rate reduces the transmissivity of interference light, is conducive to the raising of the fingerprint imaging mould group signal-to-noise ratio, is conducive to fingerprint image quality
Improve.
With reference to Fig. 5, the structural schematic diagram of fingerprint imaging mould group another embodiment of the present invention is shown.
Details are not described herein by the present embodiment and the previous embodiment something in common present invention.The present embodiment and previous embodiment are not
It is with place, in the present embodiment, the material of the filter layer 240 is ink.
In conjunction with reference Fig. 6, the amplification signal of structure in box 231 in the group embodiment of fingerprint imaging mould shown in Fig. 5 is shown
Figure.
In the present embodiment, the material of the filter layer 240 includes ink.It is dispersed in ink material and is largely used to realize face
The ink particle or droplet of ink of color.Due to the limitation of size, the interference light 261 is being projected in the filter layer 240
Afterwards, ink particle or the stronger scattering process of droplet of ink be will receive and cause transmitance lower；And 211 He of incident light
The reflected light 212 is then weaker by scattering process and has high transmittance；Therefore using ink as 240 energy of filter layer of material
Enough inhibit to cause, favorably to reduce the interference light transmission by the part that scattering process filters out the interference light 261
In the raising of signal-to-noise ratio, be conducive to the raising of fingerprint image quality.
Further, since the interference light 261 is mainly the feux rouges or infrared light that wave-length coverage is 700nm to 1064nm, because
The material of this filter layer 240 further include: infrared absorbing agents, to improve the filter layer 240 to the interference light 261
Absorptivity reduces the transmissivity of the interference light 261, improves the filter layer 240 to the filtration result of the interference light, favorably
In the improvement of signal-to-noise ratio, be conducive to the raising of fingerprint image quality.
Specifically, the infrared absorbing agents can be near infrared absorbent, i.e., to near-infrared radiation, (wave-length coverage exists
In 780nm to 2500nm range) absorbent with higher absorption rate.In the present embodiment, the infrared absorbing agents can be cyanines
Organic near-infrareds such as fuel, phthalocyanine dye, thiobis alkenes fuel, fragrant methane type fuel, quinoid fuel or azo dyes are inhaled
Receive one of fuel or a variety of.In other embodiments of the invention, the infrared absorbing agents may be nickel, tungsten, molybdenum, cobalt or platinum
Deng the metal fine particle to near-infrared radiation with absorption；It is also possible to tin indium oxide, tin-antiomony oxide or tin oxide
The nanoparticle of equal semiconductor materials.In other embodiments of the invention, the infrared absorbing agents can also be oxo transition metal
The complex compound of compound or some metal ions.
By in this present embodiment, the material of the filter layer 240 is ink；So the filter layer 240 can also pass through
The modes such as silk-screen or spraying are formed.
Fig. 7 is referred in addition, combining, shows in the group embodiment of fingerprint imaging mould shown in Fig. 6 filter layer 240 along the arrow side A
To overlooking structure diagram.
Described image sensor 230 (as shown in Figure 5) includes the pixel unit 231 being arranged in array, the pixel unit
231 include transparent area 231a and shading region 231b；As shown in Figure 6 and Figure 7, it in the present embodiment, is provided in the filter layer 240
Through-hole 241, the through-hole 241 are corresponding with the position transparent area 231a of the pixel unit 231.So as shown in fig. 7, described
Filter layer 240 is grid-shaped, and the mesh of grid is the through-hole 241.
Correspondingly, the present invention also provides a kind of electronic equipment, comprising: fingerprint imaging mould group of the invention.
The fingerprint imaging mould group is for acquiring fingerprint image.The fingerprint imaging mould group is fingerprint imaging mould of the present invention
Group, specific technical solution refer to the specific embodiment of aforementioned fingerprint imaging modules, and details are not described herein by the present invention.The electronics is set
For according to the obtained fingerprint image of fingerprint imaging mould group, fingerprint recognition is carried out.
Since the fingerprint imaging mould group is by the filter layer between the sensing face and described image sensor
Realization filters out at least partly described interference light, therefore the small volume of the fingerprint imaging mould group, and thickness is smaller, Neng Gou
Under the premise of guaranteeing integrated level, the fingerprint image of high quality is obtained, to be conducive to the electronic equipment fingerprint recognition success rate
Raising.
Since the thickness of the fingerprint imaging mould group is smaller, small volume, integrated level are higher, in the present embodiment, institute
Stating electronic equipment is the portable electronic devices such as mobile phone, tablet computer.
To sum up, the filter layer can part to be imaged described in filtering environmental light transmission and the interference light that is formed, so as to
It is effectively improved the image quality of the fingerprint imaging mould group under strong environment light condition, is conducive to improve the fingerprint imaging mould group
Performance；And the filter layer is between the sensing face and described image sensor, so as to guarantee the fingerprint
The integrated level of imaging modules.So the setting of the filter layer can take into account the improvement of integrated level and signal-to-noise ratio, can effectively mention
The performance of the high fingerprint imaging mould group.Moreover, the minimum value that the filter layer filters out optical wavelength is big in optinal plan of the present invention
In the maximum value of the lambda1-wavelength；The minimum value that the filter layer filters out optical wavelength is greater than the lambda1-wavelength range
The maximum value that maximum value or the filter layer filter out optical wavelength is less than the minimum value of the lambda1-wavelength range；Namely
It says, the lambda1-wavelength range filters out other than optical wavelength range in the filter layer, i.e., the described lambda1-wavelength range and institute
It states filter layer and filters out optical wavelength range and have no overlapping region, so as to the case where not influencing incident light and reflection light transmission
Under, the interference light is filtered out, is conducive to improve signal-to-noise ratio.In addition, the fingerprint imaging mould group is super in optinal plan of the present invention
Thin formula fingerprint imaging mould group, i.e., described image sensor is between the light source and the sensing face；The filter layer covering
Described image sensor surface.The setting of the filter layer not will increase the volume of the fingerprint imaging mould group, so can be
Under the premise of guaranteeing the fingerprint imaging mould group integrated level, the performance of the fingerprint imaging mould group is improved.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (19)
1. a kind of fingerprint imaging mould group characterized by comprising
Light source；
Sensing face is contacted with part to be imaged, and the incident light for generating the light source forms the reflected light for carrying finger print information；
Part formation interference light to be imaged described in environment light transmission；
Imaging sensor carries out photoelectric conversion to the interference light and the reflected light, and obtains fingerprint according to the reflected light
Image；
Filter layer, between the sensing face and described image sensor, for filtering out at least partly described interference light.
2. fingerprint imaging mould group as described in claim 1, which is characterized in that the thickness of the filter layer is arrived in 50nm
Within the scope of 15000nm.
3. fingerprint imaging mould group as described in claim 1, which is characterized in that the minimum value that the filter layer filters out optical wavelength is big
In the maximum value of the lambda1-wavelength.
4. fingerprint imaging mould group as claimed in claim 3, which is characterized in that the lambda1-wavelength range is arrived in 400nm
Within the scope of 480nm；The wave-length coverage of the filtered out light of filter layer is in 680nm to 850nm range.
5. fingerprint imaging mould group as claimed in claim 3, which is characterized in that the lambda1-wavelength range is arrived in 400nm
Within the scope of 480nm；The wave-length coverage of the filtered out light of filter layer is in 700nm to 810nm range.
6. fingerprint imaging mould group as described in claim 1, which is characterized in that the incident light is ultramarine light；The filter layer
Filter out feux rouges or infrared light.
7. fingerprint imaging mould group as described in claim 1, which is characterized in that the minimum value that the filter layer filters out optical wavelength is big
It is less than the incident light wave in the maximum value that the maximum value of the lambda1-wavelength range or the filter layer filter out optical wavelength
The minimum value of long range.
8. the fingerprint imaging mould group as described in claim 1 to claim 7 any one, which is characterized in that the filter layer
Material include ink.
9. fingerprint imaging mould group as claimed in claim 8, which is characterized in that the material of the filter layer further includes infrared absorption
Agent.
10. the fingerprint imaging mould group as described in claim 1 to claim 7 any one, which is characterized in that the filter layer
For lamination plated film.
11. fingerprint imaging mould group as claimed in claim 10, which is characterized in that the filter layer includes the oxidation being arranged alternately
Silicon layer and titanium oxide layer.
12. fingerprint imaging mould group as claimed in claim 11, which is characterized in that the silicon oxide layer number of plies and oxygen in the filter layer
Change the sum of number of Ti-layers in 5 to 60 ranges.
13. fingerprint imaging mould group as claimed in claim 11, which is characterized in that the thickness of the silicon oxide layer is arrived in 8nm
Within the scope of 200nm.
The thickness of the titanium oxide layer is in 8nm to 200nm range.
14. fingerprint imaging mould group as described in claim 1, which is characterized in that the filter layer passes through silk-screen, spraying or plated film
Mode formed.
15. fingerprint imaging mould group as described in claim 1, which is characterized in that the spectral region of described image sensor is small
In or equal to 810nm.
16. fingerprint imaging mould group as described in claim 1, which is characterized in that described image sensor be located at the light source and
Between the sensing face；The filter layer covers described image sensor surface.
17. fingerprint imaging mould group as described in claim 1, which is characterized in that described image sensor includes being arranged in array
Pixel unit, the pixel unit includes transparent area and shading region；
Through-hole is provided in the filter layer, the through-hole is corresponding with the pixel unit light transmission zone position.
18. fingerprint imaging mould group as described in claim 1, which is characterized in that described image sensor includes being arranged in array
Pixel unit, the pixel unit includes transparent area and shading region；
The filter layer covers the transparent area and the shading region.
19. a kind of electronic equipment characterized by comprising such as claim 1 to claim 18 any one claim institute
The fingerprint imaging mould group stated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710429689.3A CN109033926A (en) | 2017-06-08 | 2017-06-08 | Fingerprint imaging mould group and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710429689.3A CN109033926A (en) | 2017-06-08 | 2017-06-08 | Fingerprint imaging mould group and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109033926A true CN109033926A (en) | 2018-12-18 |
Family
ID=64629646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710429689.3A Pending CN109033926A (en) | 2017-06-08 | 2017-06-08 | Fingerprint imaging mould group and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109033926A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110376671A (en) * | 2019-08-19 | 2019-10-25 | 杭州美迪凯光电科技股份有限公司 | Fingerprint recognition optical filter and its production technology under a kind of screen |
| CN110649086A (en) * | 2019-10-30 | 2020-01-03 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN111052143A (en) * | 2019-04-10 | 2020-04-21 | 深圳市汇顶科技股份有限公司 | Optical fingerprint device and electronic equipment |
| CN111066032A (en) * | 2019-09-27 | 2020-04-24 | 深圳市汇顶科技股份有限公司 | Optical filter, fingerprint detection device and electronic equipment |
| CN111164608A (en) * | 2019-08-29 | 2020-05-15 | 深圳市汇顶科技股份有限公司 | Fingerprint identification device and electronic equipment |
| CN111488863A (en) * | 2019-11-29 | 2020-08-04 | 神盾股份有限公司 | Fingerprint sensing module and electronic device |
| EP3742334A4 (en) * | 2019-04-10 | 2021-06-23 | Shenzhen Goodix Technology Co., Ltd. | Optical fingerprint apparatus and electronic device |
| CN113378599A (en) * | 2020-02-25 | 2021-09-10 | 北京小米移动软件有限公司 | Optical fingerprint device, electronic equipment, brightness control method and device |
| WO2022042957A1 (en) | 2020-08-26 | 2022-03-03 | JENETRIC GmbH | Device for capturing impressions of autopodia and use of same |
| US11403869B2 (en) | 2019-04-10 | 2022-08-02 | Shenzhen GOODIX Technology Co., Ltd. | Optical fingerprint identification apparatus and electronic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120170072A1 (en) * | 2009-09-18 | 2012-07-05 | Sharp Kabushiki Kaisha | Display device |
| CN103364926A (en) * | 2013-07-15 | 2013-10-23 | 南昌欧菲光电技术有限公司 | Arrayed lens module |
| CN104318199A (en) * | 2014-06-23 | 2015-01-28 | 上海箩箕技术有限公司 | Compound optical sensor and manufacture method and use method thereof |
| CN104318204A (en) * | 2014-09-29 | 2015-01-28 | 上海箩箕技术有限公司 | Fingerprint imaging system and method, fingerprint identification system, electronic apparatus |
| CN104933421A (en) * | 2015-07-06 | 2015-09-23 | 上海箩箕技术有限公司 | An optical type fingerprint imaging system |
| CN105989323A (en) * | 2015-01-29 | 2016-10-05 | 深圳印象认知技术有限公司 | Finger palm touch inductor, finger palm image acquisition device and electronic device |
-
2017
- 2017-06-08 CN CN201710429689.3A patent/CN109033926A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120170072A1 (en) * | 2009-09-18 | 2012-07-05 | Sharp Kabushiki Kaisha | Display device |
| CN103364926A (en) * | 2013-07-15 | 2013-10-23 | 南昌欧菲光电技术有限公司 | Arrayed lens module |
| CN104318199A (en) * | 2014-06-23 | 2015-01-28 | 上海箩箕技术有限公司 | Compound optical sensor and manufacture method and use method thereof |
| CN104318204A (en) * | 2014-09-29 | 2015-01-28 | 上海箩箕技术有限公司 | Fingerprint imaging system and method, fingerprint identification system, electronic apparatus |
| CN105989323A (en) * | 2015-01-29 | 2016-10-05 | 深圳印象认知技术有限公司 | Finger palm touch inductor, finger palm image acquisition device and electronic device |
| CN104933421A (en) * | 2015-07-06 | 2015-09-23 | 上海箩箕技术有限公司 | An optical type fingerprint imaging system |
Non-Patent Citations (3)
| Title |
|---|
| 张广军: "《光电测试技术与系统》", 31 March 2010 * |
| 李念芦: "《影视技术基础 插图修订第3版》", 30 November 2012 * |
| 里天等: "《常用物理常数手册》", 31 October 1983 * |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11403869B2 (en) | 2019-04-10 | 2022-08-02 | Shenzhen GOODIX Technology Co., Ltd. | Optical fingerprint identification apparatus and electronic device |
| CN111052143B (en) * | 2019-04-10 | 2023-09-08 | 深圳市汇顶科技股份有限公司 | Optical fingerprint device and electronic equipment |
| CN111052143A (en) * | 2019-04-10 | 2020-04-21 | 深圳市汇顶科技股份有限公司 | Optical fingerprint device and electronic equipment |
| US11321957B2 (en) | 2019-04-10 | 2022-05-03 | Shenzhen GOODIX Technology Co., Ltd. | Optical fingerprint apparatus and electronic device |
| EP3742334A4 (en) * | 2019-04-10 | 2021-06-23 | Shenzhen Goodix Technology Co., Ltd. | Optical fingerprint apparatus and electronic device |
| CN110376671A (en) * | 2019-08-19 | 2019-10-25 | 杭州美迪凯光电科技股份有限公司 | Fingerprint recognition optical filter and its production technology under a kind of screen |
| WO2021035622A1 (en) * | 2019-08-29 | 2021-03-04 | 深圳市汇顶科技股份有限公司 | Fingerprint recognition apparatus and electronic device |
| CN111164608A (en) * | 2019-08-29 | 2020-05-15 | 深圳市汇顶科技股份有限公司 | Fingerprint identification device and electronic equipment |
| CN111164608B (en) * | 2019-08-29 | 2023-09-01 | 深圳市汇顶科技股份有限公司 | Fingerprint identification device and electronic equipment |
| WO2021056425A1 (en) * | 2019-09-27 | 2021-04-01 | 深圳市汇顶科技股份有限公司 | Optical filter, fingerprint detection apparatus and electronic device |
| CN111066032B (en) * | 2019-09-27 | 2022-07-12 | 深圳市汇顶科技股份有限公司 | Optical filter, fingerprint detection device and electronic equipment |
| CN111066032A (en) * | 2019-09-27 | 2020-04-24 | 深圳市汇顶科技股份有限公司 | Optical filter, fingerprint detection device and electronic equipment |
| CN110649086A (en) * | 2019-10-30 | 2020-01-03 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| US12075683B2 (en) | 2019-10-30 | 2024-08-27 | Boe Technology Group Co., Ltd. | Array substrate, method for manufacturing same, and display device |
| CN110649086B (en) * | 2019-10-30 | 2022-05-13 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| US11362154B2 (en) | 2019-10-30 | 2022-06-14 | Boe Technology Group Co., Ltd. | Array substrate, method for manufacturing same, and display device |
| CN111488863A (en) * | 2019-11-29 | 2020-08-04 | 神盾股份有限公司 | Fingerprint sensing module and electronic device |
| CN113378599A (en) * | 2020-02-25 | 2021-09-10 | 北京小米移动软件有限公司 | Optical fingerprint device, electronic equipment, brightness control method and device |
| DE102020122312B4 (en) | 2020-08-26 | 2022-04-28 | JENETRIC GmbH | Device for taking impressions of autopods and its use |
| DE102020122312A1 (en) | 2020-08-26 | 2022-03-03 | JENETRIC GmbH | Device for taking impressions of autopods and its use |
| WO2022042957A1 (en) | 2020-08-26 | 2022-03-03 | JENETRIC GmbH | Device for capturing impressions of autopodia and use of same |
| US12039801B2 (en) | 2020-08-26 | 2024-07-16 | Dermalog Jenetric Gmbh | Device for capturing impressions of autopodia and use of same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109033926A (en) | Fingerprint imaging mould group and electronic equipment | |
| CN208861297U (en) | Optical sensor module and electronic equipment | |
| US10607056B2 (en) | Device and method for the direct optical recording of live skin areas | |
| CN109196524A (en) | Optical imagery under screen in equipment with Organic Light Emitting Diode (OLED) screen or other screens for shielding upper fingerprint sensing in optical sensor module via imaging len and image pinhole | |
| CN106991366A (en) | Optical fingerprint sensor | |
| TWI839760B (en) | Sensor windows, optical filters and optical systems | |
| CN104933421A (en) | An optical type fingerprint imaging system | |
| CN204856529U (en) | Optical profile type fingerprint imaging system | |
| CN108256399B (en) | Fingerprint imaging module and electronic equipment | |
| CN103794614B (en) | For the ghost image that reduces infrared external reflection noise infrared external reflection/absorbed layer and use its imaging sensor | |
| CN110263600A (en) | Fingerprint imaging mould group and electronic equipment | |
| CN105518493A (en) | Optical filter, and imaging device comprising same | |
| US10466395B1 (en) | Systems with matte infrared-transparent layers | |
| CN112232306A (en) | Display panel and display device | |
| CN106650585A (en) | Glass panel for living fingerprint recognition | |
| CN111611952A (en) | Fingerprint identification device and electronic equipment | |
| CN108388827A (en) | Fingerprint imaging module and electronic equipment | |
| CN113065445B (en) | Fingerprint identification device and electronic equipment | |
| CN213091919U (en) | Coating protective cover | |
| WO2021168672A1 (en) | Fingerprint recognition apparatus and electronic device | |
| WO2019134460A1 (en) | Biological feature detection structure and manufacturing method therefor | |
| WO2021237524A1 (en) | Fingerprint recognition apparatus and electronic device | |
| WO2021017342A1 (en) | Oled screen fingerprint recognition microlens optical path structure, feature recognition model, and preparation method | |
| CN111066032B (en) | Optical filter, fingerprint detection device and electronic equipment | |
| TWI704685B (en) | Image capture apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181218 |