CN109031761A - Colored filter substrate and preparation method thereof - Google Patents
Colored filter substrate and preparation method thereof Download PDFInfo
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- CN109031761A CN109031761A CN201810962893.6A CN201810962893A CN109031761A CN 109031761 A CN109031761 A CN 109031761A CN 201810962893 A CN201810962893 A CN 201810962893A CN 109031761 A CN109031761 A CN 109031761A
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- width
- color blocking
- black matrix
- substrate
- colored filter
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
Abstract
The embodiment of the invention discloses a kind of production methods of colored filter substrate, comprising: provides substrate；The black matrix" including multiple open areas is formed on the substrate, wherein the line width between two open areas of arbitrary neighborhood is not completely equivalent；And color blocking layer is formed on the black matrix", the color blocking layer includes the color blocking of multiple and different colors, and the width of the color blocking of the multiple different colours is not identical.The embodiment of the invention also discloses a kind of colored filter substrates.The embodiment of the present invention can expand a liter use scope for colored filter substrate manufacture craft.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of colored filter substrate and preparation method thereof.
Background technique
With the continuous improvement of LCD technology, quality and display effect requirement of the people to liquid crystal display product
It is higher and higher.AMLCD's (Active Matrix Liquid Crystal Display, active-matrix liquid crystal display)
One layer of black matrix" of production is generally required on colored filter substrate, effect is: 1) being used to cover grid line and data line is attached
Close light leakage；2) colour mixture between sub-pix is prevented；3) ambient is prevented to be irradiated to thin film transistor channel；4) it blocks aobvious
Show the backlight of area edge.Black matrix" has multiple open areas in certain rule arrangement, and color blocking layer is filled in institute
It states in multiple open areas and is formed with multiple overlapping regions with black matrix".It is described more on colored filter substrate at present
The line width of black matrix" between a open area is equal and the width of the color blocking of different colours in color blocking layer is also equal, but
In different pixel arrangement types, such case will lead to multiple overlapping regions of the formation of black matrix" and color blocking layer
It is of different size, and then the angle segment difference of color blocking layer is different, influences image quality.Therefore, the manufacturing process of current colored filter substrate
It is only applicable to that black matrix" line width is equal, the equal situation of color blocking width in color blocking layer, use scope is small.
Summary of the invention
In view of the above-mentioned problems, the embodiment of the present invention provides a kind of colored filter substrate and preparation method thereof, make colour
Black matrix" line width on filter sheet base plate is arranged according to corresponding pixel arrangement type, improves colored filter substrate system
Make the use scope of technique.
Specifically, the embodiment of the present invention provides a kind of production method of colored filter substrate, comprising: provides substrate；?
The black matrix" including multiple open areas is formed in the substrate, wherein between two open areas of arbitrary neighborhood
Line width be not completely equivalent；And color blocking layer is formed on the black matrix", the color blocking layer includes multiple and different colors
The width of color blocking, the color blocking of the multiple different colours is not identical.
In an embodiment of the invention, described to form the black matrix" including multiple open areas on the substrate
The step of include: to form black resin layer on the substrate；Ultraviolet light exposure is carried out to the black resin layer using light shield
Light, wherein the light shield includes multiple graphics fields, and the width between two graphics fields of arbitrary neighborhood is incomplete
It is equal；And the black resin layer is developed to obtain the black matrix".
In an embodiment of the invention, the multiple open area is in regularly arranged；The color blocking layer filling is described more
A open area and with the black matrix" is overlapping forms multiple overlapping regions, wherein the width of the multiple overlapping region
It is equal.
On the other hand, the embodiment of the present invention also provides a kind of colored filter substrate, comprising: substrate；Black matrix", position
In in the substrate, multiple open areas are provided on the black matrix", wherein two open regions of arbitrary neighborhood
Line width between domain is not completely equivalent；And color blocking layer, on the black matrix" and fill the multiple open area,
The color blocking layer includes the color blocking of multiple and different colors, and the width of the color blocking of the multiple different colours is not identical.
In an embodiment of the invention, the color blocking layer and the black matrix", which overlap, forms multiple overlapping regions,
In, the width of the overlapping region is equal.
In an embodiment of the invention, the color blocking of the multiple different colours includes red color resistance, green color blocking and indigo plant
Color color blocking, the width of the green color blocking are less than the width of the red color resistance or the width of the blue color blocking.
In an embodiment of the invention, the width of the blue color blocking is less than the width of the red color resistance.
In an embodiment of the invention, the multiple open area is in regularly arranged.
In an embodiment of the invention, the light shield for generating the black matrix" includes multiple graphics fields, arbitrary neighborhood
Two first graphics fields between width be not completely equivalent.
Another aspect, the embodiment of the present invention also provide a kind of colored filter substrate, comprising: substrate；Black matrix", position
In in the substrate, multiple open areas are provided on the black matrix"；And color blocking layer, be located on the black matrix",
And the multiple open area is filled, the color blocking layer and the black matrix" overlap and form multiple overlapping regions, the color blocking
Layer includes red color resistance, green color blocking and blue color blocking；Wherein, the line width between two open areas of arbitrary neighborhood
It is not completely equivalent, the width of the green color blocking is less than the width of the red color resistance or the width of the blue color blocking；Institute
The width for stating overlapping region is equal.
The embodiment of the present invention has by the line width and setting that different in width is arranged between the open area of black matrix"
There is the color blocking of the different colours of different in width, so that colored filter substrate adapts to different pixel arrangements, expands colored
The use scope of filter sheet base plate manufacture craft.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, making required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, right
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is a kind of flow diagram of the production method for colored filter substrate that one embodiment of the invention provides；
Fig. 2 a-2h is a kind of process signal of the production method for colored filter substrate that one embodiment of the invention provides
Figure；
Fig. 3 is a kind of structural schematic diagram for colored filter substrate that one embodiment of the invention provides；
Fig. 4 is the planar structure schematic diagram of the colored filter substrate in Fig. 3；
Fig. 5 be another embodiment of the present invention provides a kind of switching array substrate production method flow diagram；
Fig. 6 a-6c, 6e-6f be another embodiment of the present invention provides a kind of switching array substrate production method mistake
Journey schematic diagram, Fig. 6 d are the partial enlarged view of a-quadrant in Fig. 6 c；
Fig. 7 be another embodiment of the present invention provides a kind of switching array substrate structural schematic diagram；
Fig. 8 is the structural schematic diagram for another display panel that another embodiment of the invention provides；
Fig. 9 is a kind of structural schematic diagram for display device that further embodiment of the present invention provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment belongs to the range that the present invention protects.
Referring to Fig. 1, for a kind of process signal of the production method of colored filter substrate provided in an embodiment of the present invention
Figure.Specifically, Fig. 1 and Fig. 2 is please referred to, the production method of colored filter substrate provided in an embodiment of the present invention includes following
Step:
Step S11 provides substrate 1111.
Step S13 forms the (a to figure referring to fig. 2 of black matrix" 1112 including multiple open area P in substrate 1111
2d).For the ease of difference, multiple open area P are respectively designated as P1, P2 ..., Pn, n are the quantity of open area P.
Wherein, the line width between two open area P of arbitrary neighborhood is not completely equivalent, it can is a part of equal other part
It is unequal.It is, of course, also possible to be that line width between two open area P of arbitrary neighborhood is completely unequal.For example, such as Fig. 2 c
Shown, the line width L1 between open area P1 and P2 is greater than the line width L2 between open area P2 and open area P3, open region
Line width L2 between domain P2 and P3 is equal to the line width L3 between open area P3 and open area P4.
Specifically, as shown in Figure 2 a, firstly, forming black resin layer BR in substrate 1111；Then, as shown in Figure 2 b,
Ultraviolet exposure is carried out to black resin layer BR using light shield M.Wherein, light shield M includes multiple graphics field Q.For the ease of area
Not, multiple graphics field Q are respectively designated as Q1, Q2 ..., Qn, n are the quantity of graphics field Q.Typically, multiple figures
The shape of region Q is rectangle.In addition, multiple graphics field Q can be set to multiple rule according to different pixel arrangement needs
Arrangement mode, such as bar shaped arrangement, mosaic arrangement or triangle arrangement etc., even, two graphics field Q of arbitrary neighborhood it
Between width be not completely equivalent, it can be that part is equal, part is unequal.Certainly two figures of arbitrary neighborhood be can also be
Width between the Q of shape region is completely unequal.For example, as shown in Figure 2 b, the width between graphics field Q1 and graphics field Q2
D1 is greater than width D 2, width D 1 between graphics field Q1 and graphics field Q2 etc. between graphics field Q2 and graphics field Q3
Width D 3 between graphics field Q3 and graphics field Q4.Finally, being developed to obtain black matrix" to black resin layer BR
1112.So, by being designed according to actual needs on the light shield M of black matrix" 1112 including the more of different in width
The pattern of a image-region Q forms the black matrix" 1112 of corresponding different line widths after development in substrate 1111, can
With the scope of application of lifting process.
Step S15 forms color blocking layer 1113 (e, Fig. 2 f referring to fig. 2) on black matrix" 1112.Color blocking layer 1113 is filled
Multiple open area P.The color blocking of color blocking layer 1113 including multiple and different colors, for example including red color resistance R, green color blocking G and
Blue color blocking B can also include other color color blockings, such as yellow color blocking Y, white color blocking W etc. certainly.Herein, such as Fig. 2 f institute
Show, in order to adapt to different demands, the color blocking of different colours it is of different size.It is known, for example, that human eye compares green light
Sensitivity, then the width X1 of settable green color blocking G is less than the width X2 and/or red of other color color blockings such as blue color blocking B
The width X3 of color blocking R.Further, the width X2 of blue color blocking B is less than the width X3 of red color resistance R.Generate different colours
Color blocking, it is necessary to use different light shields.Certainly, the color blocking of same color may be the same or different.
It is noted that the different light shields of correspondence different colours give birth to and are provided with multiple patterns of openings, on different light shields
The width of patterns of openings is corresponding with the width of corresponding color color blocking, i.e., the width of the patterns of openings on different light shields not phase
Together.For example, the width for generating the patterns of openings on the light shield of green color blocking is less than the opening figure on the light shield for generating red color resistance
The width of case or the width of the patterns of openings on the light shield of generation blue color blocking further generate on the light shield of blue color blocking
Patterns of openings width be less than generate red color resistance light shield on patterns of openings width.
Color blocking layer 1113 and black matrix" 1112, which overlap, forms multiple overlapping region T, multiple overlapping for the ease of difference
Region T is respectively designated as T1, T2 ..., Tn, n are the quantity of overlapping region.Wherein, as shown in Fig. 2 e, Fig. 2 f, Duo Gejiao
The width of folded region T is equal, such as width W2 of the width W1 equal to overlapping region T2 of overlapping region T1, overlapping region T1's
Width W1 is equal to the width W3 of overlapping region T3.So, the angle segment difference of each overlapping region T can be consistent, from
And promote display image quality.It is noted that the width of multiple overlapping region T is smaller, display image quality is better.
In addition, the production method of colored filter substrate 111 further include:
Protective layer 1114 is formed in color blocking layer 1113 (referring to fig. 2 g), for protecting color blocking layer 1113.Protective layer 1114
Material be, for example, the resin materials such as propylene resin.
Further, the production method of colored filter substrate 111 further include:
Transparent electrode layer 1115 is formed (referring to fig. 2 h) on the protective layer 1114.Transparent electrode layer 1115 is, for example,
The transparent oxide materials such as indium tin oxide target (Indium-tin-oxide, ITO).It is saturating that transparent electrode layer 1115 can be whole piece
Bright conductive layer, or it is also possible to multiple striped transparent conductive layers, or multiple electrically conducting transparent blocks to arrange in ranks.
In addition, providing a kind of production side using above-mentioned colored filter substrate referring to Fig. 3 for the embodiment of the present invention
The structural schematic diagram of the colored filter substrate of method production.Colored filter substrate 111 provided in an embodiment of the present invention, comprising:
Substrate 1111, black matrix" 1112, color blocking layer 1113, protective layer 1114 and common electrode layer 1115.
Specifically, the material of substrate 1111 may be, for example, glass, quartz, organic polymer etc..
Black matrix" 1112 is located in substrate 1111.The material of black matrix" 1112 may be, for example, the black light of carbon black
The opaque materials such as resistance.Black matrix" 1112 is mainly used for preventing light leakage, increase contrast etc..As described in fig. 3 and fig. 4, black
Multiple open area P are placed in colour moment battle array 1112.For the ease of difference, multiple open areas are respectively designated as P1,
P2 ... Pn, n are the quantity of open area.Wherein, the incomplete phase of line width between two open area P of arbitrary neighborhood
Deng, it can part is equal, and part is unequal.Such as shown in Fig. 2, line width between open area P1 and open area P2
L1 is greater than line width L2, the line width L1 between open area P1 and open area P2 between open area P2 and open area P3
Equal to the line width L3 between open area P3 and open area P4.In addition, according to different pixel arrangement demands, multiple openings
Region P is in multiple rule arrangement mode, such as bar shaped arrangement, mosaic arrangement or triangle arrangement etc..In different arrangement modes
In, the line width between open area on black matrix" 1112 can be equal or unequal, needs fully according to display arrangement
Ask determining.
Color blocking layer 1113 is located on black matrix" 1112, and fills multiple open area P.The material of color blocking layer 1113 can
For example, resinae pigment-dispersing type colour photoresist etc..Color blocking layer 1113 includes the color blocking of multiple and different colors, for example including
Red color resistance R, green color blocking G and blue color blocking B can also include other color color blockings, such as yellow color blocking Y, white certainly
Color blocking W etc..Each color blocking fills an open area P.Herein, as shown in figure 2f, in order to adapt to different demands, different face
The color blocking of color it is of different size.It is known, for example, that human eye is more sensitive to green light, then the width of settable green color blocking G
The width X3 of width X2 and/or red color resistance R of the X1 less than other color color blockings such as blue color blocking B.Further, blue
The width X2 of color blocking B is less than the width X3 of red color resistance R.Generate the color blocking of different colours, it is necessary to use different light shields.When
So, the color blocking of same color may be the same or different.
In addition, color blocking layer 1113 and black matrix" 1112 overlap and form multiple overlapping region T.It is multiple for the ease of difference
Overlapping region is respectively designated as T1, T2 ... Tn, n are the quantity of overlapping region.As shown in Figure 3, Figure 4, multiple crossover regions
The width of domain T is equal, such as width W2 of the width W1 equal to overlapping region T2 of overlapping region T1, the width of overlapping region T1
W1 is equal to the width W3 of overlapping region T3.So, the angle segment difference of overlapping region T can be consistent, to be promoted aobvious
Show image quality.
Colored filter substrate 111 further includes protective layer 1114.Protective layer 1114 is located above color blocking layer 1113, is used for
Protect color blocking layer 1113.The material of protective layer 1114 is, for example, the resin materials such as propylene resin.
Colored filter substrate 111 may also include transparent electrode layer 1115.Transparent electrode layer 1115 is located at color blocking layer 1113
The side of neighbouring array substrate 110 simultaneously covers color blocking layer 1113.Transparent electrode layer 1115 is, for example, indium tin oxide target (Indium-
Tin-oxide, ITO) etc. transparent oxide materials.Transparent electrode layer 1115 can be whole piece transparency conducting layer, or can also
To be multiple striped transparent conductive layers, or multiple electrically conducting transparent blocks to arrange in ranks.
In conclusion line width of the embodiment of the present invention by the setting different in width between the open area of black matrix",
So that colored filter substrate realizes different pixel arrangements, promote colored filter substrate manufacture craft uses model
It encloses；In addition the overlapping region is set while controlling color blocking layer and the overlapping region of black matrix" small as far as possible with identical
Width, make color blocking layer angle section keep difference consistent, promote display image quality.
Referring to Fig. 5, for another embodiment of the present invention provides a kind of array substrate production method process signal
Figure.Specifically, the production method of array substrate provided in an embodiment of the present invention includes:
Step S31 forms the first metal layer 1122 as shown in Figure 6 a in substrate 1121.The material of substrate 1121 can example
For example glass, quartz, organic polymer etc..The first metal layer 1122 be conductive metal film layer, material may be, for example, molybdenum,
Aluminium, copper, titanium, tungsten etc..The first metal layer 1122 includes the scan line GL formed by patterning processes, the grid electricity of thin film transistor (TFT)
Pole G and public pressure wire CL.Scan line GL is connected with gate electrode G.Public pressure wire CL is walked including the first cabling CL1, second
Line CL2 and third cabling CL3.First cabling CL1, third cabling CL3 are arranged in a crossed manner and mutual with the second lines CL2 respectively
Connection.The extending direction of first cabling CL1 is identical as the extending direction of the second cabling CL2, such as the first cabling CL1 prolongs
It is vertical with the extending direction of the second cabling CL2 to stretch direction, i.e. the first cabling CL1 and the second cabling CL2 square crossing are arranged and connect
It connects.Further, the extending direction of the first cabling CL1 is identical as the extending direction of scan line GL, and the second cabling CL2 prolongs
It is vertical with the extending direction of scan line GL to stretch direction.Further, third cabling CL3 and the first cabling CL1 is arranged in parallel.
Step S33 sequentially forms insulating layer GSN, and in insulating layer GSN as shown in Figure 6 b on the first metal layer 1122
Upper and gate electrode G corresponding position forms semiconductor layer AS.
Step S35 forms second metal layer 1123 on semiconductor layer AS and (does not indicate insulating layer in figure as fig. 6 c
GSN).Second metal layer 1123 includes the drain electrode D and data line DL of the source electrode S of thin film transistor (TFT), thin film transistor (TFT).Number
According to line DL connection source electrode S.
In addition, as shown in fig 6d, second metal layer 1123 partly overlaps with the first metal layer 1122, to form overlapping
Transitional region TR between region OV, Non-overlapping Domain NOV and connection overlapping region OV and Non-overlapping Domain NOV.Mistake herein
Crossing region TR can be one, be also possible to multiple.Under normal conditions, overlapping region OV is higher than Non-overlapping Domain NOV.Transition
Region TR connection overlapping region OV and Non-overlapping Domain NOV, to will form the step with constant slope.Transitional region TR
Cabling coverage condition affect the performance of second metal layer 1123.Therefore, when planning the cabling of second metal layer 1123,
The width of transitional region TR is not less than the width of Non-overlapping Domain NOV, namely increases the trace width of transitional region TR, can be with
Increasing the Step Coverage width at the place transitional region TR, reduction second metal layer 1123 breaks possibility at transitional region TR, with
Improve the product qualification rate of array substrate.
Specifically, as shown in fig 6d, data line DL and the scan line GL of the first metal layer 1122 partly overlap, thus shape
At overlapping region OV1, Non-overlapping Domain NOV1 and transitional region TR1, the width TD1 of transitional region TR1 is not small on data line DL
In the width ND1 for being greater than Non-overlapping Domain NOV1.Further, the width TD1 of transitional region TR1 is 5.5 microns, non-
The width ND1 of overlapping region NOV1 is 4.5 microns.
As shown in fig 6d, the source electrode S of the thin film transistor (TFT) and gate electrode G of the first metal layer 1122 partly overlaps, thus
Form the width TD2 of transitional region TR2 on overlapping region OV2, Non-overlapping Domain NOV2 and transitional region TR2, source electrode S not
Less than the width ND2 for being greater than Non-overlapping Domain NOV2.Further, the width TD2 of transitional region TR2 is 4.8 microns,
The width ND2 of Non-overlapping Domain NOV2 is 4.5 microns.Cabling at source electrode S is more complicated than the cabling of data line DL, in source electricity
The case where breaking is easier at the S of pole.Therefore, increase the transitional region TR2 trace width of source electrode S and gate electrode G, more
It is beneficial to prevent broken string.
As shown in fig 6d, the drain electrode D of the thin film transistor (TFT) and gate electrode G of the first metal layer 1122 partly overlaps, thus
Form the width TD3 etc. of transitional region TR3 on overlapping region OV3, Non-overlapping Domain NOV3 and transitional region TR3, drain electrode D
In the width ND3 of Non-overlapping Domain NOV3.Further, the width TD3 of transitional region TR3 is 4.8 microns, Non-overlapping Domain
The width ND3 of NOV3 is 4.8 microns.Equally, the cabling at drain electrode D is more complicated than the cabling of data line DL, at drain electrode D
It is also easier to the case where breaking.Therefore, increase the transitional region TR3 trace width of drain electrode D and gate electrode G, equally more
It is beneficial to prevent broken string.
Further, on source electrode S transitional region TR2 width TD2 be equal to drain electrode D on transitional region TR3 width
TD3.Such as the width TD3 of the width TD2 and transitional region TR3 of transitional region TR2 is 4.8 microns.
In addition, as shown in fig 6e, passivation layer PSN is formed in second metal layer 1123 and is formed in passivation layer PSN connect
Contact hole CH.
Finally, as shown in Figure 6 f, forming pixel electrode layer 1124 in passivation layer PSN (not shown).Pixel electrode
Layer 1124 is for example electrically connected by the drain electrode D connection of the contact hole CH and thin film transistor (TFT) of passivation layer PSN.So far, array
Substrate manufacture is completed.
In addition, providing a kind of production method production using above-mentioned array substrate referring to Fig. 7 for the embodiment of the present invention
Array substrate structural schematic diagram.Array substrate 112 provided in an embodiment of the present invention, comprising: substrate 1121, the first metal
Layer 1122, insulating layer GSN, semiconductor layer AS, second metal layer 1123, passivation layer PSN and pixel electrode layer 1124.
The material of substrate 1121 may be, for example, glass, quartz, organic polymer etc..
The first metal layer 1122 is located in substrate 1121.The first metal layer 1122 includes being swept by what patterning processes were formed
Retouch the gate electrode G and public pressure wire CL of line GL, thin film transistor (TFT).The first metal layer 1122 is conductive membrane layer, and material can
For example, molybdenum, aluminium, copper, titanium, tungsten etc..
Insulating layer GSN (being not shown in Fig. 7) is arranged on the first metal layer 1122.Semiconductor layer AS is arranged exhausted
On edge layer GSN and at position corresponding with gate electrode G.
Second metal layer 1123 is arranged on semiconductor layer AS.Second metal layer 1123 includes the source electricity of thin film transistor (TFT)
The drain electrode D and data line DL of pole S, thin film transistor (TFT).Data line DL is connect with source electrode S.
Herein, it is worth mentioning at this point that, as shown in figs. 6 c and 6d, second metal layer 1123 with the first metal layer 1122
Divide overlapping, to be formed between overlapping region OV, Non-overlapping Domain NOV and connection overlapping region OV and Non-overlapping Domain NOV
Transitional region TR.Transitional region TR herein can be one, be also possible to multiple.Under normal conditions, overlapping region OV is higher than
Non-overlapping Domain NOV.Transitional region TR connection overlapping region OV and Non-overlapping Domain NOV, to will form with centainly oblique
The step of degree.The cabling coverage condition of transitional region TR affects the performance of second metal layer 1123.Therefore, in planning second
When the cabling of metal layer 1123, the width of transitional region TR is not less than the width of Non-overlapping Domain NOV, namely increases transition region
The trace width of domain TR can increase the Step Coverage width at transitional region TR, prevent second metal layer 1123 in transition region
Break at the TR of domain, to improve the product qualification rate of array substrate.
Specifically, data line DL and the scan line GL of the first metal layer 1122 partly overlap, to form overlapping region
OV1, Non-overlapping Domain NOV1 and transitional region TR1, the width TD1 of transitional region TR1 is greater than Non-overlapping Domain on data line DL
The width ND1 of NOV1.Further, the width TD1 of transitional region TR1 is 5.5 microns, the width ND1 of Non-overlapping Domain NOV1
It is 4.5 microns.
The source electrode S of thin film transistor (TFT) partly overlaps with the gate electrode G of the first metal layer 1122, to form overlay region
Domain OV2, Non-overlapping Domain NOV2 and transitional region TR2, the width TD2 of transitional region TR2 is greater than non-overlap area on source electrode S
The width ND2 of domain NOV2.Further, the width TD2 of transitional region TR2 is 4.8 microns, the width of Non-overlapping Domain NOV2
ND2 is 4.5 microns.Cabling at source electrode S is more complicated than the cabling of data line DL, is easier to break at source electrode S
The case where.Therefore, increase the transitional region TR2 trace width of source electrode S and gate electrode G, being more advantageous to prevents broken string.
The drain electrode D of thin film transistor (TFT) partly overlaps with the gate electrode G of the first metal layer 1122, to form overlay region
Domain OV3, Non-overlapping Domain NOV3 and transitional region TR3, the width TD3 of transitional region TR3 is equal to non-overlap area on drain electrode D
The width ND3 of domain NOV3.Further, the width TD3 of transitional region TR3 is 4.8 microns, the width of Non-overlapping Domain NOV3
ND3 is 4.8 microns.Cabling at drain electrode D is more complicated than the cabling of data line DL, is also easier to break at drain electrode D
The case where line.Therefore, increase the transitional region TR3 trace width of drain electrode D and gate electrode G, being equally more advantageous to prevents from breaking
Occur.
Further, on source electrode S transitional region TR2 width TD2 be equal to drain electrode D on transitional region TR3 width
TD3.Such as the width TD3 of the width TD2 and transitional region TR3 of transitional region TR2 is 4.8 microns.
Passivation layer PSN (being not shown in Fig. 7) is arranged in second metal layer 1123 and is formed with contact hole CH.
Pixel electrode layer 1124 is arranged on passivation layer PSN and is for example electrically connected the second gold medal by contact hole CH connection
Belong to layer 1123.
In addition, as shown in fig. 7, the extending direction of scan line GL is not identical as the extending direction of data line DL, it is preferred that
The extending direction of scan line GL is vertical with the extending direction of data line DL, i.e. scan line GL and data line DL are mutually perpendicular to intersect
Arrangement.Multi-strip scanning line GL and multiple data lines DL intersects to form multiple interlaced area SR in matrix distribution.Pixel electrode layer
1124 are located in the interlaced area.In addition, as shown in fig. 7, public pressure wire CL be located in interlaced area SR and not with sweep
It retouches line GL to be connected with gate electrode G, projection of the public pressure wire CL in substrate 1121 and pixel electrode layer 1124 are in substrate 1121
On projection section overlapping so that public pressure wire CL and pixel electrode layer 1124 form storage capacitance.It is arranged on scan line GL
There is an opening K, the first end cabling CL1, which is deeply open, K and is kept for such as 9.75 microns of pre-determined distance with opening K.First cabling
The end CL1 is provided with aperture H.The shape of aperture H is, for example, rectangle.Further, the both ends of the first cabling CL1 are respectively set
There is aperture H.In addition, the size, shape of the aperture H at both ends can not also be identical on the first cabling CL1.So, by
Aperture H is set on the first cabling CL1, can reduce metal layer occupied space, saves production cost.
In conclusion between the first metal layer and second metal layer of the embodiment of the present invention by increasing array substrate
The trace width of transitional region can increase the Step Coverage width at transitional region, prevent second metal layer in transitional region
Place's broken string, to improve the product qualification rate of array substrate；In addition, aperture is arranged on the route of public pressure wire, to reduce gold
Belong to layer occupied space, saves production cost.
On the other hand, as shown in figure 8, further embodiment of this invention also provides a kind of display panel.Display panel 11 includes
Colored filter substrate 111, array substrate 112, display dielectric layer 113 and frame glue 114.
Specifically, colored filter substrate 111 is oppositely arranged with array substrate 112.Colored filter substrate 111 can be with
Using the colored filter substrate in above-described embodiment.Array substrate 112 can be active array substrate, such as thin film transistor (TFT)
Array substrate is used for transmission and controls electric signal.Array substrate 112 can be using the array substrate in above-described embodiment.Display
Such as liquid crystal layer of dielectric layer 113 is set between colored filter substrate 111 and array substrate 112.Frame glue 114 is set to coloured silk
Between colo(u)r filter substrate 111 and array substrate 112.Frame glue 114 is around display dielectric layer 113 to seal display dielectric layer
113, so that an accommodating space is collectively formed is aobvious to accommodate for frame glue 114 and array substrate 112 and colored filter substrate 111
Show dielectric layer 113.
As shown in figure 9, yet another embodiment of the invention provides a kind of display device.Display dress provided in an embodiment of the present invention
Setting 1 includes display panel 11, the first polarizing film 12 and the second polarizing film 13.Display panel 11 can be, for example, above-described embodiment
In display panel.First polarizing film 12 and the second polarizing film 13 are divided into the opposite sides of display panel 11.First polarizing film
12 polarization direction and the polarization direction of the second polarizing film 13 are typically mutually perpendicular to.
The implementation of display device 1 and technical effect may refer to previous embodiment, and details are not described herein.
In several embodiments provided by the present invention, it should be understood that arriving, disclosed system, device and method can
To realize by another way.For example, the apparatus embodiments described above are merely exemplary, for example, the unit
Division, only a kind of logical function partition, there may be another division manner in actual implementation, for example, multichannel unit or
Component can be combined or can be integrated into another system, or some features can be ignored or not executed.Another point, institute
Display or the mutual coupling, direct-coupling or communication connection discussed can be through some interfaces, device or unit
Indirect coupling or communication connection, can be electrical property, mechanical or other forms.
The unit as illustrated by the separation member may or may not be physically separated, as unit
The component of display may or may not be physical unit, it can and it is in one place, or may be distributed over more
On road network unit.Some or all of unit therein can be selected to realize this embodiment scheme according to the actual needs
Purpose.
It, can also be in addition, the functional units in various embodiments of the present invention may be integrated into one processing unit
It is that each unit physically exists alone, can also be integrated in one unit with two or more units.Above-mentioned integrated list
Member both can take the form of hardware realization, can also realize in the form of hardware adds SFU software functional unit.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, those skilled in the art should understand that: it is still
It is possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is equally replaced
It changes；And these are modified or replaceed, the essence for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution
Mind and range.
Claims (10)
1. a kind of production method of colored filter substrate characterized by comprising
Substrate is provided；
The black matrix" including multiple open areas is formed on the substrate, wherein two open regions of arbitrary neighborhood
Line width between domain is not completely equivalent；And
Color blocking layer is formed on the black matrix", the color blocking layer includes the color blocking of multiple and different colors, the multiple difference
The width of the color blocking of color is not identical.
2. the production method of colored filter substrate as described in claim 1, which is characterized in that the shape on the substrate
At including the steps that the black matrix" of multiple open areas includes:
Black resin layer is formed on the substrate；
Ultraviolet exposure is carried out to the black resin layer using light shield, wherein the light shield includes multiple graphics fields, arbitrarily
Width between two adjacent graphics fields is not completely equivalent；And
The black resin layer is developed to obtain the black matrix".
3. the production method of colored filter substrate as described in claim 1, which is characterized in that the multiple open area is in
It is regularly arranged；The color blocking layer, which is filled the multiple open area and overlapped with the black matrix", forms multiple overlapping regions,
Wherein, the width of the multiple overlapping region is equal.
4. a kind of colored filter substrate characterized by comprising
Substrate；
Black matrix" is located in the substrate, multiple open areas is provided on the black matrix", wherein arbitrary neighborhood
Line width between two open areas is not completely equivalent；And
Color blocking layer on the black matrix" and fills the multiple open area, and the color blocking layer includes multiple and different face
The width of the color blocking of color, the color blocking of the multiple different colours is not identical.
5. colored filter substrate as claimed in claim 4, which is characterized in that the color blocking layer and the black matrix" are overlapping
Form multiple overlapping regions, wherein the width of the overlapping region is equal.
6. colored filter substrate as claimed in claim 5, which is characterized in that the color blocking of the multiple different colours includes red
Color color blocking, green color blocking and blue color blocking, width of the width less than the red color resistance of the green color blocking or the blue
The width of color blocking.
7. colored filter substrate as claimed in claim 6, which is characterized in that the width of the blue color blocking is less than described red
The width of color color blocking.
8. colored filter substrate as claimed in claim 4, which is characterized in that the multiple open area is in regularly arranged.
9. colored filter substrate as claimed in claim 4, which is characterized in that it includes more for generating the light shield of the black matrix"
A graphics field, the width between first graphics field of two of arbitrary neighborhood are not completely equivalent.
10. a kind of colored filter substrate characterized by comprising
Substrate；
Black matrix" is located in the substrate, multiple open areas is provided on the black matrix"；And
Color blocking layer on the black matrix" and fills the multiple open area, the color blocking layer and the black matrix"
Overlapping to form multiple overlapping regions, the color blocking layer includes red color resistance, green color blocking and blue color blocking；
Wherein, the line width between two open areas of arbitrary neighborhood is not completely equivalent, and the width of the green color blocking is small
In the width of the red color resistance or the width of the blue color blocking；The width of the overlapping region is equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810962893.6A CN109031761A (en) | 2018-08-22 | 2018-08-22 | Colored filter substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810962893.6A CN109031761A (en) | 2018-08-22 | 2018-08-22 | Colored filter substrate and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109031761A true CN109031761A (en) | 2018-12-18 |
Family
ID=64627987
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810962893.6A Pending CN109031761A (en) | 2018-08-22 | 2018-08-22 | Colored filter substrate and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111413823A (en) * | 2019-01-07 | 2020-07-14 | 群创光电股份有限公司 | Electronic device |
| CN112558208A (en) * | 2020-12-01 | 2021-03-26 | 惠科股份有限公司 | Circular color filter and circular display thereof |
| CN114509889A (en) * | 2022-02-08 | 2022-05-17 | 武汉华星光电技术有限公司 | Color film substrate, manufacturing method thereof and display panel |
-
2018
- 2018-08-22 CN CN201810962893.6A patent/CN109031761A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111413823A (en) * | 2019-01-07 | 2020-07-14 | 群创光电股份有限公司 | Electronic device |
| CN112558208A (en) * | 2020-12-01 | 2021-03-26 | 惠科股份有限公司 | Circular color filter and circular display thereof |
| CN114509889A (en) * | 2022-02-08 | 2022-05-17 | 武汉华星光电技术有限公司 | Color film substrate, manufacturing method thereof and display panel |
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