CN109030556A - A kind of opaque solid material normal direction emissivity measurement device and measurement method based on solar simulator heating - Google Patents
A kind of opaque solid material normal direction emissivity measurement device and measurement method based on solar simulator heating Download PDFInfo
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Abstract
A kind of opaque solid material normal direction emissivity measurement device and measurement method based on solar simulator heating, is related to a kind of normal emittance measuring device and measuring method.Purpose is to solve the problems, such as that opaque solid material high temperature normal direction emissivity measurement method accuracy is poor.The present invention directly heats sample by solar simulator, avoids interference of the multiple reflections caused by optical window to measuring signal in conventional high temperature optical path, and thermal infrared imager guarantees that sample to be tested temperature is uniform；First its background spectrum is measured before measuring emission spectrum, subtracts the background spectrum from emission spectrum in calculating, eliminates the interference of background signal, by the measurement of calibration factor, eliminates measured deviation that may be present between optical path.The glass screen of setting can weaken the stray radiation of light source.The present invention can accurately calculate the high temperature normal emittance of opaque solid material.The present invention is suitable for the high temperature normal direction emissivity measurement of opaque solid material.
Description
Technical field
The present invention relates to a kind of normal emittance measuring device and measuring method.
Background technique
With the development of aerospace field, the high temperature of metal material and anti-heat-barrier material, which is applied, more and more to be closed
Note.Since radiant heat transfer accounts for leading under hot conditions, the Research of emitting under opaque solid material high temperature is for heat
The fields such as radiation transmission and material property optimization are of great significance, therefore carry out and emit for opaque solid material high temperature normal direction
The research of rate measurement method is extremely urgent.
But in current ongoing research, optical window need to be equipped with using closed type high temperature furnace body heating method, by window
There can be the multiple reflections of measuring signal in mouth and the light path system of sample composition, so that measuring signal is not inconsistent with actual conditions；
And in existing research, the profiling temperatures on sample to be tested surface are not considered specifically, also will not measure radiation
Background signal removal in strength signal, then can make measurement result and physical presence deviation.Therefore sample normal direction in existing research
The accuracy of the extraction of emissivity spectra is poor.
Summary of the invention
The present invention is poor in order to solve the problems, such as existing opaque solid material high temperature normal direction emissivity measurement method accuracy,
It is proposed a kind of opaque solid material normal direction emissivity measurement device and measurement method based on solar simulator heating.
The present invention is based on the opaque solid material normal direction emissivity measurement devices of solar simulator heating by solar energy
Simulator, glass screen, high temp samples bracket, thermocouple, sliding rail, thermal infrared imager, parabolic reflector, FTIR spectrum
Instrument, blackbody furnace, reflective mirror pedestal, sample exit facet radical occlusion device and thermal imaging system pedestal are constituted；
The sample exit facet radical occlusion device is made of front apron, rear baffle and twin rail runway；The front apron is plate,
It is cavity in the middle part of front apron, front apron side is provided with the cooling water inlet pipe and cooling water outlet pipe being connected to cavity；After keep off
Plate is plate, is cavity in the middle part of rear baffle, rear baffle side is provided with the cooling water inlet pipe being connected to cavity and cooling water goes out
Water pipe；Front apron and rear baffle are separately positioned between two parallel twin rail runways, and front apron is set to its of twin rail runway
In in a slideway, rear baffle is set in another slideway of twin rail runway；Front apron is provided centrally with perpendicular to front apron
First circular through hole of plate face, rear baffle are provided centrally with the second circular through hole perpendicular to rear baffle plate face；
The solar simulator, glass screen, high temp samples bracket and sample exit facet radical occlusion device are successively set on cunning
Rail side, solar simulator are arranged far from sliding rail；Front apron is set up towards high temp samples branch in sample exit facet radical occlusion device
It sets；Blackbody furnace setting is set side by side on the slide rail in the sliding rail other side, thermal imaging system pedestal and reflective mirror pedestal；Fourier's infrared light
What spectrometer was arranged in sliding rail is provided with reflective mirror pedestal one end；Glass screen is provided centrally with light and passes through circular hole, solar simulator
Beam outlet towards glass screen light pass through circular hole be arranged；Parabolic reflector is arranged on reflective mirror pedestal, reflective mirror bottom
Seat upper surface is vertically connected with reflective mirror rotation axis, and the bracket of parabolic reflector is set in reflective mirror rotation axis；Fourier
The beam inlet of infrared spectrometer is arranged towards parabolic reflector；Thermal infrared imager is arranged on thermal imaging system pedestal；The height
Warm sample holder is annular, is provided with sample to be tested in high temp samples bracket, on the sample to be tested surface of thermal infrared imager side
It is provided with thermocouple；The diameter of first circular through hole is 50~60mm；
The glass screen is plate hollow quartz glass, and the side of glass screen is provided with cooling water inlet pipe and cooling water goes out
Water pipe；
The high temp samples bracket be metal material, be provided between the annular inner surface and sample of high temp samples bracket every
Hot material；Wherein, high temp samples bracket be used for fixed wafer shape sample, sample with a thickness of 0.1~1mm；High temp samples bracket
It for metal material, is separated between high temp samples bracket and sample by heat-barrier material, the thermal conductivity of heat-barrier material is low, reduces
The radial thermal losses of sample；Simultaneously the high temp samples bracket of annular its have and keep thermal stress on sample circumference and mechanical stress equal
The advantages of even distribution；Power, which is uniformly distributed, can prevent from deforming in sample heating process, guarantee that sample surfaces are flat when measurement
Face will not have an impact measurement direction.
It is connected between the thermocouple and computer by usb data acquisition system；The usb data acquisition system is beauty
The OM-DAQ-USB-2400 series usb data acquisition system of OMEGA company of state；It is equipped in computer for displays temperature
Daqpro software；
The reflective mirror base bottom is provided with first sliding groove, and first sliding groove is arranged on the slide rail；Thermal imaging system base bottom
It is provided with second sliding slot, second sliding slot is arranged on the slide rail.
Method is carried out using the above-mentioned opaque solid material normal direction emissivity measurement device based on solar simulator heating
It is followed the steps below to the method for emissivity measurement:
One, background spectrum S relevant to electromagnetic radiation spectrum measurement optical path is obtainedλ,extra；
The light of mobile reflective mirror pedestal to parabolic reflector, sample to be tested, glass screen is round logical by circular hole and first
Hole on the same line, and makes the light of glass screen pass through center of circular hole and the first circular through hole center on the same line；Rotation
Parabolic reflector makes the radiant light of sample to be tested under room temperature be reflected into the beam inlet of Fourier infrared spectrograph, benefit
Background spectrum S relevant to electromagnetic radiation spectrum measurement optical path is obtained with Fourier infrared spectrographλ,extra；
Two, equilibrium temperature T is obtainedsamThe emission spectrum S of lower sample to be testedλ,sam；
Solar simulator is opened, it is to be measured that adjustment high temp samples bracket is gathered in the light for opening solar simulator sending
The plane of incidence of sample simultaneously forms the hot spot that radius is 50~60mm, starts to heat sample to be tested；
Mobile thermal imaging system pedestal makes the surface of emission of thermal infrared imager alignment sample to be tested and obtains the transmitting of quasi- sample to be tested
The temperature distribution image in face；By in the temperature distribution image of the surface of emission of sample to be tested with picture centre temperature deviation 5% with
Interior border circular areas is chosen as temperature homogeneity range and is provided with the second circular through hole for having identical size with temperature homogeneity range
Rear baffle, mobile rear baffle to the second circular through hole center and the first circular through hole center are on the same line；
Thermocouple is placed in the surface of emission of sample to be tested in temperature homogeneity range close to marginal position to sample to be tested
The surface of emission carries out temperature monitoring, reaches equilibrium temperature T when the temperature fluctuation of thermocouple is less than 5ksam；
Outer thermal imaging system is removed, the light of mobile light microscopic pedestal to parabolic reflector, sample to be tested and glass screen passes through circular hole
On the same line；Rotation parabolic reflector makes the radiant light of sample to be tested be reflected into Fourier infrared spectrograph
Beam inlet obtains equilibrium temperature T using Fourier infrared spectrographsamThe emission spectrum S of lower sample to be testedλ,sam；
Three, background spectrum S relevant to blackbody spectrum measurement optical path is obtainedλ,extra,b；
Adjustment blackbody furnace makes the radiant light exit face of blackbody furnace to the distance and sample to be tested of paraboloid of revolution reflective mirror
The surface of emission is equidistant to paraboloid of revolution reflective mirror；Rotation parabolic reflector reflects into the radiant light of blackbody furnace
The beam inlet for entering Fourier infrared spectrograph is obtained using Fourier infrared spectrograph and measures optical path phase with blackbody spectrum
The background spectrum S of passλ,extra,b；
Four, obtaining temperature is TbThe transmitting radiation spectrum S of lower blackbody furnaceλ,b(Tb)；
It opens blackbody furnace and set temperature is Tb, obtaining temperature using spectrometer is TbThe blackbody radiation spectrum of lower blackbody furnace
Sλ,b(Tb)；As equilibrium temperature TsamNo more than blackbody furnace ceiling temperature when, Tb=Tsam, as equilibrium temperature TsamGreater than blackbody furnace
Ceiling temperature when, TbFor the ceiling temperature of blackbody furnace；
Five, system calibration coefficient C is obtainedλ；
It is T in temperaturebUnder, blackbody furnace is moved to sample to be tested position, and make the radiant light exit face of blackbody furnace
It is overlapped with the surface of emission of sample to be tested, it is infrared that rotation parabolic reflector makes the radiant light of blackbody furnace be reflected into Fourier
The beam inlet of spectrometer obtains blackbody radiation spectrum using Fourier infrared spectrograph, by blackbody radiation spectrum and step 4
Obtained temperature is TbThe blackbody radiation spectrum S of lower blackbody furnaceλ,b(Tb) make ratio, gained ratio is system calibration coefficient Cλ；
Six, the transmitting radiation intensity I of sample to be tested is calculatedλ,sam；
In formula, Iλ,b(Tb) indicate temperature TbUnder process
The spectral radiance power that Planck function is calculated；
Seven, the emissivity ε (T of sample to be tested is calculatedsam)；
In formula, Iλ,b(Tsam) indicate temperature TsamThe lower light being calculated by Planck function
Compose radiant force.
Variation of the spectral radiance power of black matrix of the Planck function for describing with wavelength, Planck function expression
Are as follows:In formula, Iλ,bFor spectral radiance power, unit W/m3；λ is wavelength, unit m；c1It is logical for the first radiation
Amount is 3.7419 × 10-16W·m2；c2It is 1.4388 × 10 for the second radiation flux-2m·K。
It the principle of the invention and has the beneficial effect that
1, the present invention is suitable for the high temperature normal direction emissivity measurement of opaque solid material, and Method And Principle is simple, Neng Gouzhun
Really measure the normal emittance under opaque solid sample high temperature.In the present invention, pass through the temperature observation of thermal infrared imager first
As a result it determines sample to be tested homogeneous heating region, guarantees that institute's survey region sample to be tested temperature is uniform；Secondly, in measurement process
The present invention, which adjusts blackbody furnace, makes the radiant light exit face of blackbody furnace to the distance of parabolic reflector and the surface of emission of sample to be tested
To being equidistant for parabolic reflector, therefore it can guarantee that blackbody furnace is identical with the transmission optical path of sample to be tested；It is surveying
Before measuring emission spectrum, first its background spectrum is measured, subtracts the background spectrum from emission spectrum in actually calculating
It goes, eliminates the interference of background signal, to guarantee the reliability of calculated result；In addition, being eliminated by the measurement of calibration factor
Measured deviation that may be present between two optical paths.And the glass screen that the present invention is arranged can shield the spuious spoke of light source
It penetrates；Therefore the present invention can accurately calculate the high temperature normal emittance of the opaque solid material of sample；Energy of the present invention
Enough output powers by adjusting solar simulator adjust the heating temperature of sample to be tested, and then adjust measurement temperature, measurement
Temperature reaches 1800K.
2, sample exit facet radical occlusion device is made of front apron and rear baffle in the present invention, when temperature is uniform on sample to be tested
After area determines, the rear baffle for being provided with the second circular through hole that there is identical size with temperature homogeneity range is chosen, and by rear baffle
It is arranged between parabolic reflector and sample to be tested, can either guarantees measured zone sample temperature uniformity, can also eliminate
Radiation interference of the sample slideway side peripheral region to measuring signal；
3, the present invention is open measuring device, and sample to be tested two sides are not provided with optical window, are simulated by solar energy
Device directly heats sample, avoids interference of the multiple reflections caused by optical window to measuring signal, and measurement accuracy is high.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of apparatus of the present invention；
Fig. 2 is the structural schematic diagram of glass screen 2；
Fig. 3 is the cross-sectional view of Fig. 2；
Fig. 4 is the surface of emission schematic diagram of sample to be tested 4；A is the surface of emission of sample to be tested 4 in figure, and b is thermocouple 5, and c is
Spectrometer monitors region；
Fig. 5 is 21 structural schematic diagram of sample exit facet radical occlusion device；
Fig. 6 is the sectional view of twin rail runway 18 in sample exit facet radical occlusion device 21；
Fig. 7 is the system calibration coefficient curve that 1 step 5 of embodiment obtains；As shown in Figure 7,1 step 5 of embodiment obtains
System calibration coefficient be almost 1；
Fig. 8 is the 6h-SiC sample normal emittance curve that embodiment 1 obtains；By Fig. 8 it can be seen that, in 800K temperature strip
Under part, within the scope of 3~10 mu m wavebands, normal emittance is gradually increased the electromagnetic radiation spectrum with the increase of wavelength；10
In~12.5 mu m wavebands, normal emittance strongly reduces trend with wavelength presentation, and reaches minimum value at 12.5 μm, then method
It is gradually increased to emissivity with wavelength increase.
Specific embodiment:
The technical solution of the present invention is not limited to the following list, further includes between each specific embodiment
Any reasonable combination.
Specific embodiment 1: the opaque solid material normal direction transmitting that present embodiment is heated based on solar simulator
Rate measuring device
By solar simulator 1, glass screen 2, high temp samples bracket 3, thermocouple 5, sliding rail 7, thermal infrared imager 8, parabolic
Face reflective mirror 9, Fourier infrared spectrograph 10, blackbody furnace 11, reflective mirror pedestal 12, sample exit facet radical occlusion device 21 and thermal imagery
Instrument pedestal 13 is constituted；
The sample exit facet radical occlusion device 21 is made of front apron 17, rear baffle 16 and twin rail runway 18；The front
Plate 17 is plate, is cavity in the middle part of front apron 17, and 17 side of front apron is provided with the cooling water inlet pipe being connected to cavity and cold
But water outlet pipe；Rear baffle 16 is plate, is cavity in the middle part of rear baffle 16,16 side of rear baffle be provided be connected to cavity it is cold
But water water inlet pipe and cooling water outlet pipe；Front apron 17 and rear baffle 16 be separately positioned on two parallel twin rail runways 18 it
Between, front apron 17 is set in one of slideway of twin rail runway 18, and rear baffle 16 is set to another of twin rail runway 18
In slideway；
The front apron 17 is provided centrally with the first circular through hole 20 perpendicular to 17 plate face of front apron, 16 center of rear baffle
It is provided perpendicular to the second circular through hole 19 of 16 plate face of rear baffle；
The solar simulator 1, glass screen 2, high temp samples bracket 3 and sample exit facet radical occlusion device 21 are set gradually
In 7 side of sliding rail, solar simulator 1 is arranged far from sliding rail 7；Front apron 17 is towards high temperature in sample exit facet radical occlusion device 21
Sample holder 3 is arranged；The setting of blackbody furnace 11 is disposed in parallel in 7 other side of sliding rail, thermal imaging system pedestal 13 and reflective mirror pedestal 12
On sliding rail 7；What Fourier infrared spectrograph 10 was arranged in sliding rail 7 is provided with 12 one end of reflective mirror pedestal；The setting of 2 center of glass screen
There is light by circular hole, the light of beam outlet towards the glass screen 2 of solar simulator 1 is arranged by circular hole；Parabolic reflector 9
It is arranged on reflective mirror pedestal 12,12 upper surface of reflective mirror pedestal is vertically connected with reflective mirror rotation axis 15, parabolic reflector 9
Bracket be set in reflective mirror rotation axis 15；The beam inlet of Fourier infrared spectrograph 10 is set towards parabolic reflector 9
It sets；Thermal infrared imager 8 is arranged on thermal imaging system pedestal 13；The high temp samples bracket 3 is annular, is set in high temp samples bracket 3
It is equipped with sample to be tested 4, is provided with thermocouple 5 on 4 surface of sample to be tested of 8 side of thermal infrared imager；
The diameter of first circular through hole 20 is 50~60mm.
It present embodiment principle and has the beneficial effect that
1, present embodiment is suitable for the high temperature normal direction emissivity measurement of opaque solid material, and Method And Principle is simple, energy
Enough normal emittances accurately measured under opaque solid sample high temperature.In the present invention, pass through the temperature of thermal infrared imager 8 first
Observed result determines 4 homogeneous heating region of sample to be tested, guarantees that 4 temperature of institute's survey region sample to be tested are uniform；Secondly, measuring
Present invention adjustment blackbody furnace 11 makes the radiant light exit face of blackbody furnace 11 to the distance of parabolic reflector 9 and to test sample in the process
The surface of emission of product 4 is equidistant to parabolic reflector 9, therefore can guarantee the transmission light of blackbody furnace 11 Yu sample to be tested 4
Road is identical；Before measuring emission spectrum, first its background spectrum is measured, by the background spectrum in actually calculating
It is subtracted from emission spectrum, eliminates the interference of background signal, to guarantee the reliability of calculated result；In addition, passing through calibration system
Several measurements eliminates measured deviation that may be present between two optical paths.And 2 energy of glass screen of present embodiment setting
Enough shield the stray radiation of light source；Therefore present embodiment can accurately calculate the height of the opaque solid material of sample
Warm normal emittance；Present embodiment can adjust the heating of sample to be tested 4 by adjusting the output power of solar simulator 1
Temperature, and then measurement temperature is adjusted, measurement temperature reaches 1800K.
2, sample exit facet radical occlusion device 21 is made of front apron 17 and rear baffle 16 in present embodiment, works as sample to be tested
After temperature homogeneity range determines on 4, the rear gear for being provided with the second circular through hole 19 that there is identical size with temperature homogeneity range is chosen
Plate 16, and rear baffle 16 is arranged between parabolic reflector 9 and sample to be tested 4, it can either guarantee measured zone sample temperature
Uniformity is spent, can also eliminate sample slideway side peripheral region to the radiation interference of measuring signal；
3, present embodiment is open measuring device, and 4 two sides of sample to be tested are not provided with optical window, pass through solar energy
Simulator directly heats sample, avoids interference of the multiple reflections caused by optical window to measuring signal, and measurement accuracy is high.
Specific embodiment 2: the present embodiment is different from the first embodiment in that: the glass screen 2 is in plate
The side of empty quartz glass, glass screen 2 is provided with cooling water inlet pipe and cooling water outlet pipe.Other steps and parameter and specific
Embodiment one is identical.
Specific embodiment 3: the present embodiment is different from the first and the second embodiment in that: the high temp samples branch
Heat-barrier material is provided between the annular inner surface and sample of frame 3.Other steps and parameter and specific embodiment one or two-phase
Together.
Specific embodiment 4: unlike one of present embodiment and specific embodiment one to three: the high temperature sample
Product bracket 3 is metal material.Other steps and parameter are identical as one of specific embodiment one to three.Present embodiment high temperature
Sample holder 3 be used for fixed wafer shape sample, sample with a thickness of 0.1~1mm；High temp samples bracket 3 is metal material, high temperature
It is separated between sample holder 3 and sample by heat-barrier material, the thermal conductivity of heat-barrier material is low, reduces the radial heat waste of sample
Consumption；Simultaneously annular high temp samples bracket 3 its have the advantages that make the thermal stress on sample circumference to be uniformly distributed with mechanical stress；
Power, which is uniformly distributed, can prevent from deforming in sample heating process, guarantee that sample surfaces are plane when measurement, will not be to measurement
Direction has an impact.
Specific embodiment 5: unlike one of present embodiment and specific embodiment one to four: the thermocouple 5
It is connect between computer by usb data acquisition system.Other steps and one of parameter and specific embodiment one to four phase
Together.
Specific embodiment 6: unlike one of present embodiment and specific embodiment one to five: the reflective mirror
12 bottom of pedestal is provided with first sliding groove, and first sliding groove is set on sliding rail 7；It is sliding that 13 bottom of thermal imaging system pedestal is provided with second
Slot, second sliding slot are set on sliding rail 7.Other steps and parameter are identical as one of specific embodiment one to five.
Specific embodiment 7: present embodiment utilizes the opaque solid material normal direction heated based on solar simulator
The method of emissivity measurement device progress normal emittance measurement, it is characterised in that: this method follows the steps below:
One, background spectrum S relevant to electromagnetic radiation spectrum measurement optical path is obtainedλ,extra；
The light of mobile reflective mirror pedestal 12 to parabolic reflector 9, sample to be tested 4, glass screen 2 passes through circular hole and the first circle
Shape through-hole 20 on the same line, and makes the light of glass screen 2 by center of circular hole and 20 center of the first circular through hole with always
On line；Rotation parabolic reflector 9 makes the radiant light of sample to be tested 4 under room temperature be reflected into Fourier infrared spectrograph 10
Beam inlet, utilize Fourier infrared spectrograph 10 to obtain and measure the relevant background spectrum of optical path with electromagnetic radiation spectrum
Sλ,extra；
Two, equilibrium temperature T is obtainedsamThe emission spectrum S of lower sample to be tested 4λ,sam；
Solar simulator 1 is opened, adjustment high temp samples bracket 3 is gathered in the light for opening the sending of solar simulator 1
The plane of incidence of sample to be tested 4 simultaneously forms the hot spot that radius is 50~60mm, starts to heat sample to be tested 4；
Mobile thermal imaging system pedestal 13 makes thermal infrared imager 8 be directed at the surface of emission of sample to be tested 4 and obtains quasi- sample to be tested 4
The temperature distribution image of the surface of emission；It will exist in the temperature distribution image of the surface of emission of sample to be tested 4 with picture centre temperature deviation
Border circular areas within 5% chooses the second circle for being provided with and having identical size with temperature homogeneity range as temperature homogeneity range
The rear baffle 16 of through-hole 19, mobile 16 to the second circular through hole of rear baffle, 19 center and 20 center of the first circular through hole are the same as always
On line；
Thermocouple 5 is placed in the surface of emission of sample to be tested 4 in temperature homogeneity range close to marginal position to sample to be tested 4
The surface of emission carry out temperature monitoring, when the temperature fluctuation of thermocouple 5 be less than 5k when reach equilibrium temperature Tsam；
Outer thermal imaging system 8 is removed, the light of mobile light microscopic pedestal 12 to parabolic reflector 9, sample to be tested 4 and glass screen 2 is logical
Cross circular hole on the same line；It is infrared that rotation parabolic reflector 9 makes the radiant light of sample to be tested 4 be reflected into Fourier
The beam inlet of spectrometer 10 obtains equilibrium temperature T using Fourier infrared spectrograph 10samThe emission spectrum of lower sample to be tested 4
Sλ,sam；
Three, background spectrum S relevant to blackbody spectrum measurement optical path is obtainedλ,extra,b；
Adjustment blackbody furnace 11 makes the radiant light exit face of blackbody furnace 11 to the distance of paraboloid of revolution reflective mirror 9 and to test sample
The surface of emission of product 4 is equidistant to paraboloid of revolution reflective mirror 9；Rotation parabolic reflector 9 makes the radiant light of blackbody furnace 11
It is reflected into the beam inlet of Fourier infrared spectrograph 10, utilizes the acquisition of Fourier infrared spectrograph 10 and blackbody spectrum
Measure the relevant background spectrum S of optical pathλ,extra,b；
Four, obtaining temperature is TbThe transmitting radiation spectrum S of lower blackbody furnace 11λ,b(Tb)；
It opens blackbody furnace 11 and set temperature is Tb, obtaining temperature using spectrometer 10 is TbThe black matrix spoke of lower blackbody furnace 11
Penetrate spectrum Sλ,b(Tb)；As equilibrium temperature TsamNo more than blackbody furnace 11 ceiling temperature when, Tb=Tsam, as equilibrium temperature TsamGreatly
When the ceiling temperature of blackbody furnace 11, TbFor the ceiling temperature of blackbody furnace 11；
Five, system calibration coefficient C is obtainedλ；
It is T in temperaturebUnder, blackbody furnace 11 is moved to 4 position of sample to be tested, and go out the radiant light of blackbody furnace 11
Mouth face is overlapped with the surface of emission of sample to be tested 4, and rotation parabolic reflector 9 makes the radiant light of blackbody furnace 11 be reflected into Fu
In leaf infrared spectrometer 10 beam inlet, using Fourier infrared spectrograph 10 obtain blackbody radiation spectrum, by black body radiation
The temperature that spectrum and step 4 obtain is TbThe blackbody radiation spectrum S of lower blackbody furnace 11λ,b(Tb) make ratio, gained ratio is system
Calibration factor Cλ；
Six, the transmitting radiation intensity I of sample to be tested 4 is calculatedλ,sam；
In formula, Iλ,b(Tb) indicate temperature TbUnder process
The spectral radiance power that Planck function is calculated；
Seven, the emissivity ε (T of sample to be tested 4 is calculatedsam)；
In formula, Iλ,b(Tsam) indicate temperature TsamThe lower light being calculated by Planck function
Compose radiant force.
It present embodiment principle and has the beneficial effect that
1, present embodiment is suitable for the high temperature normal direction emissivity measurement of opaque solid material, and Method And Principle is simple, energy
Enough normal emittances accurately measured under opaque solid sample high temperature.In the present invention, pass through the temperature of thermal infrared imager 8 first
Observed result determines 4 homogeneous heating region of sample to be tested, guarantees that 4 temperature of institute's survey region sample to be tested are uniform；Secondly, measuring
Present invention adjustment blackbody furnace 11 makes the radiant light exit face of blackbody furnace 11 to the distance of parabolic reflector 9 and to test sample in the process
The surface of emission of product 4 is equidistant to parabolic reflector 9, therefore can guarantee the transmission light of blackbody furnace 11 Yu sample to be tested 4
Road is identical；Before measuring emission spectrum, first its background spectrum is measured, by the background spectrum in actually calculating
It is subtracted from emission spectrum, eliminates the interference of background signal, to guarantee the reliability of calculated result；In addition, passing through calibration system
Several measurements eliminates measured deviation that may be present between two optical paths.And 2 energy of glass screen of present embodiment setting
Enough shield the stray radiation of light source；Therefore present embodiment can accurately calculate the height of the opaque solid material of sample
Warm normal emittance；
2, sample exit facet radical occlusion device 21 is made of front apron 17 and rear baffle 16 in present embodiment, works as sample to be tested
After temperature homogeneity range determines on 4, the rear gear for being provided with the second circular through hole 19 that there is identical size with temperature homogeneity range is chosen
Plate 16, and rear baffle 16 is arranged between parabolic reflector 9 and sample to be tested 4, it can either guarantee measured zone sample temperature
Uniformity is spent, can also eliminate sample slideway side peripheral region to the radiation interference of measuring signal；
3, present embodiment is open measuring device, and 4 two sides of sample to be tested are not provided with optical window, pass through solar energy
Simulator directly heats sample, avoids interference of the multiple reflections caused by optical window to measuring signal, and measurement accuracy is high.
Specific embodiment 8: present embodiment is unlike specific embodiment seven: described in step 6 and step 7
Variation of the spectral radiance power of black matrix of the Planck function for describing with wavelength, Planck function expression are as follows:
In formula, Iλ,bFor spectral radiance power, unit W/m3；λ is wavelength, unit m；c1For the first spoke
Flux is penetrated, is 3.7419 × 10-16W·m2；c2It is 1.4388 × 10 for the second radiation flux-2m·K.Other steps and parameter
It is identical as specific embodiment seven.
Beneficial effects of the present invention are verified using following embodiment:
Embodiment 1:
The present invention is based on the opaque solid material normal direction emissivity measurement devices of solar simulator heating by solar energy
Simulator 1, glass screen 2, high temp samples bracket 3, thermocouple 5, sliding rail 7, thermal infrared imager 8, parabolic reflector 9, Fourier
Infrared spectrometer 10, blackbody furnace 11, reflective mirror pedestal 12, sample exit facet radical occlusion device 21 and thermal imaging system pedestal 13 are constituted；
The sample exit facet radical occlusion device 21 is made of front apron 17, rear baffle 16 and twin rail runway 18；The front
Plate 17 is plate, is cavity in the middle part of front apron 17, and 17 side of front apron is provided with the cooling water inlet pipe being connected to cavity and cold
But water outlet pipe；Rear baffle 16 is plate, is cavity in the middle part of rear baffle 16,16 side of rear baffle be provided be connected to cavity it is cold
But water water inlet pipe and cooling water outlet pipe；Front apron 17 and rear baffle 16 be separately positioned on two parallel twin rail runways 18 it
Between, front apron 17 is set in one of slideway of twin rail runway 18, and rear baffle 16 is set to another of twin rail runway 18
In slideway；
The front apron 17 is provided centrally with the first circular through hole 20 perpendicular to 17 plate face of front apron, 16 center of rear baffle
It is provided perpendicular to the second circular through hole 19 of 16 plate face of rear baffle；
The solar simulator 1, glass screen 2, high temp samples bracket 3 and sample exit facet radical occlusion device 21 are set gradually
In 7 side of sliding rail, solar simulator 1 is arranged far from sliding rail 7；Front apron 17 is towards high temperature in sample exit facet radical occlusion device 21
Sample holder 3 is arranged；The setting of blackbody furnace 11 is disposed in parallel in 7 other side of sliding rail, thermal imaging system pedestal 13 and reflective mirror pedestal 12
On sliding rail 7；What Fourier infrared spectrograph 10 was arranged in sliding rail 7 is provided with 12 one end of reflective mirror pedestal；The setting of 2 center of glass screen
There is light by circular hole, the light of beam outlet towards the glass screen 2 of solar simulator 1 is arranged by circular hole；Parabolic reflector 9
It is arranged on reflective mirror pedestal 12,12 upper surface of reflective mirror pedestal is vertically connected with reflective mirror rotation axis 15, parabolic reflector 9
Bracket be set in reflective mirror rotation axis 15；The beam inlet of Fourier infrared spectrograph 10 is set towards parabolic reflector 9
It sets；Thermal infrared imager 8 is arranged on thermal imaging system pedestal 13；The high temp samples bracket 3 is annular, is set in high temp samples bracket 3
It is equipped with sample to be tested 4, is provided with thermocouple 5 on 4 surface of sample to be tested of 8 side of thermal infrared imager；
The diameter of first circular through hole 20 is 60mm；
The glass screen 2 is plate hollow quartz glass, and the side of glass screen 2 is provided with cooling water inlet pipe and cooling water
Outlet pipe；
The high temp samples bracket 3 is metal material, is provided between the annular inner surface and sample of high temp samples bracket 3
Mullite thermal insulation material；The present embodiment high temperature sample holder 3 be used for fixed wafer shape 6h-SiC sample, sample with a thickness of
.33mm；High temp samples bracket 3 is metal material, is separated between high temp samples bracket 3 and sample by heat-barrier material, heat-insulated
The thermal conductivity of material is low, reduces the radial thermal losses of sample；Simultaneously annular high temp samples bracket 3 its have make sample circumference
On thermal stress and mechanical stress the advantages of being uniformly distributed；Power, which is uniformly distributed, can prevent from deforming in sample heating process,
Guarantee that sample surfaces are plane when measurement, will not have an impact measurement direction.
It is connected between the thermocouple 5 and computer by usb data acquisition system；The usb data acquisition system is
The OM-DAQ-USB-2400 series usb data acquisition system of OMEGA company of the U.S.；It is equipped in computer for displays temperature
Daqpro software；
12 bottom of reflective mirror pedestal is provided with first sliding groove, and first sliding groove is set on sliding rail 7；Thermal imaging system pedestal 13
Bottom is provided with second sliding slot, and second sliding slot is set on sliding rail 7.
Method is carried out using the above-mentioned opaque solid material normal direction emissivity measurement device based on solar simulator heating
It is followed the steps below to the method for emissivity measurement:
One, background spectrum S relevant to electromagnetic radiation spectrum measurement optical path is obtainedλ,extra；
The light of mobile reflective mirror pedestal 12 to parabolic reflector 9, sample to be tested 4, glass screen 2 passes through circular hole and the first circle
Shape through-hole 20 on the same line, and makes the light of glass screen 2 by center of circular hole and 20 center of the first circular through hole with always
On line；Rotation parabolic reflector 9 makes the radiant light of sample to be tested 4 under room temperature be reflected into Fourier infrared spectrograph 10
Beam inlet, utilize Fourier infrared spectrograph 10 to obtain and measure the relevant background spectrum of optical path with electromagnetic radiation spectrum
Sλ,extra；
Two, equilibrium temperature T is obtainedsamThe emission spectrum S of lower sample to be tested 4λ,sam；
Solar simulator 1 is opened, adjustment high temp samples bracket 3 is gathered in the light for opening the sending of solar simulator 1
The plane of incidence of sample to be tested 4 simultaneously forms the hot spot that radius is 60mm, starts to heat sample to be tested 4；
Mobile thermal imaging system pedestal 13 makes thermal infrared imager 8 be directed at the surface of emission of sample to be tested 4 and obtains quasi- sample to be tested 4
The temperature distribution image of the surface of emission；It will exist in the temperature distribution image of the surface of emission of sample to be tested 4 with picture centre temperature deviation
Border circular areas within 5% chooses the second circle for being provided with and having identical size with temperature homogeneity range as temperature homogeneity range
The rear baffle 16 of through-hole 19, mobile 16 to the second circular through hole of rear baffle, 19 center and 20 center of the first circular through hole are the same as always
On line；
Thermocouple 5 is placed in the surface of emission of sample to be tested 4 in temperature homogeneity range close to marginal position to sample to be tested 4
The surface of emission carry out temperature monitoring, when the temperature fluctuation of thermocouple 5 be less than 5k when reach equilibrium temperature Tsam；In the present embodiment
Tsam=800K；
Outer thermal imaging system 8 is removed, the light of mobile light microscopic pedestal 12 to parabolic reflector 9, sample to be tested 4 and glass screen 2 is logical
Cross circular hole on the same line；It is infrared that rotation parabolic reflector 9 makes the radiant light of sample to be tested 4 be reflected into Fourier
The beam inlet of spectrometer 10 obtains equilibrium temperature T using Fourier infrared spectrograph 10samThe emission spectrum of lower sample to be tested 4
Sλ,sam；
Three, background spectrum S relevant to blackbody spectrum measurement optical path is obtainedλ,extra,b；
Adjustment blackbody furnace 11 makes the radiant light exit face of blackbody furnace 11 to the distance of paraboloid of revolution reflective mirror 9 and to test sample
The surface of emission of product 4 is equidistant to paraboloid of revolution reflective mirror 9；Rotation parabolic reflector 9 makes the radiant light of blackbody furnace 11
It is reflected into the beam inlet of Fourier infrared spectrograph 10, utilizes the acquisition of Fourier infrared spectrograph 10 and blackbody spectrum
Measure the relevant background spectrum S of optical pathλ,extra,b；
Four, obtaining temperature is TbThe transmitting radiation spectrum S of lower blackbody furnace 11λ,b(Tb)；
It opens blackbody furnace 11 and set temperature is Tb, obtaining temperature using spectrometer 10 is TbThe black matrix spoke of lower blackbody furnace 11
Penetrate spectrum Sλ,b(Tb)；As equilibrium temperature TsamNo more than blackbody furnace 11 ceiling temperature when, Tb=Tsam, as equilibrium temperature TsamGreatly
When the ceiling temperature of blackbody furnace 11, TbFor the ceiling temperature of blackbody furnace 11；T in the present embodimentb=Tsam=800K；
Five, system calibration coefficient C is obtainedλ；
It is T in temperaturebUnder, blackbody furnace 11 is moved to 4 position of sample to be tested, and go out the radiant light of blackbody furnace 11
Mouth face is overlapped with the surface of emission of sample to be tested 4, and rotation parabolic reflector 9 makes the radiant light of blackbody furnace 11 be reflected into Fu
In leaf infrared spectrometer 10 beam inlet, using Fourier infrared spectrograph 10 obtain blackbody radiation spectrum, by black body radiation
The temperature that spectrum and step 4 obtain is TbThe blackbody radiation spectrum S of lower blackbody furnace 11λ,b(Tb) make ratio, gained ratio is system
Calibration factor Cλ；
Six, the transmitting radiation intensity I of sample to be tested 4 is calculatedλ,sam；
In formula, Iλ,b(Tb) indicate temperature TbUnder process
The spectral radiance power that Planck function is calculated；
Seven, the emissivity ε (T of sample to be tested 4 is calculatedsam)；
In formula, Iλ,b(Tsam) indicate temperature TsamThe lower light being calculated by Planck function
Compose radiant force.
Planck function described in step 6 and step 7 for description black matrix spectral radiance power with wavelength variation,
Planck function expression are as follows:
In formula, Iλ,bFor spectral radiance power, unit W/m3；λ is wavelength, unit m；c1For the first spoke
Flux is penetrated, is 3.7419 × 10-16W·m2；c2It is 1.4388 × 10 for the second radiation flux-2m·K。
Fig. 4 is the surface of emission schematic diagram of sample to be tested 4 in embodiment 1；A is the surface of emission of sample to be tested 4 in figure, and b is heat
Galvanic couple 5, c are that spectrometer monitors region；
Fig. 7 is the system calibration coefficient curve that 1 step 5 of embodiment obtains；As shown in Figure 7,1 step 5 of embodiment obtains
System calibration coefficient be almost 1；
Fig. 8 is the 6h-SiC sample normal emittance curve that embodiment 1 obtains；By Fig. 8 it can be seen that, in 800K temperature strip
Under part, within the scope of 3~10 mu m wavebands, normal emittance is gradually increased the electromagnetic radiation spectrum with the increase of wavelength；10
In~12.5 mu m wavebands, normal emittance strongly reduces trend with wavelength presentation, and reaches minimum value at 12.5 μm, then method
It is gradually increased to emissivity with wavelength increase.
Claims (9)
1. a kind of opaque solid material normal direction emissivity measurement device based on solar simulator heating, it is characterised in that:
The device is by solar simulator (1), glass screen (2), high temp samples bracket (3), thermocouple (5), sliding rail (7), infrared thermal imagery
Instrument (8), parabolic reflector (9), Fourier infrared spectrograph (10), blackbody furnace (11), reflective mirror pedestal (12), sample outgoing
Face radical occlusion device (21) and thermal imaging system pedestal (13) are constituted；
The sample exit facet radical occlusion device (21) is made of front apron (17), rear baffle (16) and twin rail runway (18)；It is described
Front apron (17) is plate, is cavity in the middle part of front apron (17), front apron (17) side is provided with the cooling water being connected to cavity
Water inlet pipe and cooling water outlet pipe；Rear baffle (16) is plate, is cavity, the setting of rear baffle (16) side in the middle part of rear baffle (16)
There are the cooling water inlet pipe and cooling water outlet pipe being connected to cavity；Front apron (17) and rear baffle (16) are separately positioned on two
Between parallel twin rail runway (18), front apron (17) is set in one of slideway of twin rail runway (18), rear baffle
(16) it is set in another slideway of twin rail runway (18)；
The front apron (17) is provided centrally with the first circular through hole (20) perpendicular to front apron (17) plate face, rear baffle (16)
It is provided centrally with the second circular through hole (19) perpendicular to rear baffle (16) plate face；
The solar simulator (1), glass screen (2), high temp samples bracket (3) and sample exit facet radical occlusion device (21) are successively
Setting is arranged in sliding rail (7) side, solar simulator (1) far from sliding rail (7)；Front in sample exit facet radical occlusion device (21)
Plate (17) is arranged towards high temp samples bracket (3)；Blackbody furnace (11) setting in sliding rail (7) other side, thermal imaging system pedestal (13) and
Reflective mirror pedestal (12) is disposed in parallel on sliding rail (7)；Fourier infrared spectrograph (10) is arranged anti-in being provided with for sliding rail (7)
Light microscopic pedestal (12) one end；Glass screen (2) is provided centrally with light and passes through circular hole, the beam outlet direction of solar simulator (1)
The light of glass screen (2) is arranged by circular hole；Parabolic reflector (9) is arranged on reflective mirror pedestal (12), reflective mirror pedestal
(12) upper surface is vertically connected with reflective mirror rotation axis (15), and the bracket of parabolic reflector (9) is set in reflective mirror rotation axis
(15) on；The beam inlet of Fourier infrared spectrograph (10) is arranged towards parabolic reflector (9)；Thermal infrared imager (8) is set
It sets on thermal imaging system pedestal (13)；The high temp samples bracket (3) is annular, is provided in high temp samples bracket (3) to test sample
Product (4) are provided with thermocouple (5) on sample to be tested (4) surface of thermal infrared imager (8) side；
The diameter of first circular through hole (20) is 50~60mm.
2. the opaque solid material normal direction emissivity measurement dress according to claim 1 based on solar simulator heating
It sets, it is characterised in that: the glass screen (2) is plate hollow quartz glass, and the side of glass screen (2) is provided with cooling water water inlet
Pipe and cooling water outlet pipe.
3. the opaque solid material normal direction emissivity according to claim 1 or 2 based on solar simulator heating is surveyed
Measure device, it is characterised in that: be provided with heat-barrier material between the annular inner surface and sample of the high temp samples bracket (3).
4. the opaque solid material normal direction emissivity measurement dress according to claim 3 based on solar simulator heating
It sets, it is characterised in that: the high temp samples bracket (3) is metal material.
5. the opaque solid material normal direction emissivity according to claim 1,2 or 4 based on solar simulator heating
Measuring device, it is characterised in that: connect between the thermocouple (5) and computer by usb data acquisition system.
6. the opaque solid material normal direction emissivity measurement dress according to claim 5 based on solar simulator heating
It sets, it is characterised in that: reflective mirror pedestal (12) bottom is provided with first sliding groove, and first sliding groove is set on sliding rail (7)；Heat
Picture instrument pedestal (13) bottom is provided with second sliding slot, and second sliding slot is set on sliding rail (7).
7. being filled using the opaque solid material normal direction emissivity measurement described in claim 1 based on solar simulator heating
Set the method for carrying out normal emittance measurement, it is characterised in that: this method follows the steps below:
One, background spectrum S relevant to electromagnetic radiation spectrum measurement optical path is obtainedλ,extra；
The light of mobile reflective mirror pedestal (12) to parabolic reflector (9), sample to be tested (4), glass screen (2) passes through circular hole and the
One circular through hole (20) on the same line, and passes through the light of glass screen (2) in center of circular hole and the first circular through hole (20)
The heart is on the same line；Rotation parabolic reflector (9) is reflected into the radiant light of sample to be tested under room temperature (4) in Fu
The beam inlet of leaf infrared spectrometer (10) is obtained using Fourier infrared spectrograph (10) and measures optics with electromagnetic radiation spectrum
The relevant background spectrum S in pathλ,extra；
Two, equilibrium temperature T is obtainedsamThe emission spectrum S of lower sample to be tested (4)λ,sam；
It opens solar simulator (1), adjustment high temp samples bracket (3) makes to open the light aggregation that solar simulator (1) issues
In sample to be tested (4) the plane of incidence and formed radius be 50~60mm hot spot, start to heat sample to be tested (4)；
Mobile thermal imaging system pedestal (13) make the surface of emission of thermal infrared imager (8) alignment sample to be tested (4) and obtain quasi- sample to be tested
(4) temperature distribution image of the surface of emission；By in the temperature distribution image of the surface of emission of sample to be tested (4) with picture centre temperature
Border circular areas of the deviation within 5% chooses for being provided with and having identical size with temperature homogeneity range as temperature homogeneity range
The rear baffle (16) of two circular through holes (19), mobile rear baffle (16) to the second circular through hole (19) center and the first circular through hole
(20) center is on the same line；
Thermocouple (5) is placed in the surface of emission of sample to be tested (4) in temperature homogeneity range close to marginal position to sample to be tested
(4) the surface of emission carries out temperature monitoring, reaches equilibrium temperature T when the temperature fluctuation of thermocouple (5) is less than 5ksam；
It removes outer thermal imaging system (8), mobile light microscopic pedestal (12) to parabolic reflector (9), sample to be tested (4) and glass screen (2)
Light by circular hole on the same line；Rotation parabolic reflector (9) is reflected into the radiant light of sample to be tested (4)
The beam inlet of Fourier infrared spectrograph (10) obtains equilibrium temperature T using Fourier infrared spectrograph (10)samUnder it is to be measured
The emission spectrum S of sample (4)λ,sam；
Three, background spectrum S relevant to blackbody spectrum measurement optical path is obtainedλ,extra,b；
Adjustment blackbody furnace (11) make the radiant light exit face of blackbody furnace (11) to paraboloid of revolution reflective mirror (9) distance with it is to be measured
The surface of emission being equidistant to paraboloid of revolution reflective mirror (9) of sample (4)；Rotation parabolic reflector (9) makes blackbody furnace
(11) radiant light is reflected into the beam inlet of Fourier infrared spectrograph (10), utilizes Fourier infrared spectrograph
(10) background spectrum S relevant to blackbody spectrum measurement optical path is obtainedλ,extra,b；
Four, obtaining temperature is TbThe transmitting radiation spectrum S of lower blackbody furnace (11)λ,b(Tb)；
It opens blackbody furnace (11) and set temperature is Tb, obtaining temperature using spectrometer (10) is TbThe black matrix of lower blackbody furnace (11)
Radiation spectrum Sλ,b(Tb)；As equilibrium temperature TsamNo more than blackbody furnace (11) ceiling temperature when, Tb=Tsam, work as equilibrium temperature
TsamGreater than blackbody furnace (11) ceiling temperature when, TbFor the ceiling temperature of blackbody furnace (11)；
Five, system calibration coefficient C is obtainedλ；
It is T in temperaturebUnder, blackbody furnace (11) is moved to sample to be tested (4) position, and make the radiant light of blackbody furnace (11)
Exit face is overlapped with the surface of emission of sample to be tested (4), and it is anti-that the radiant light of blackbody furnace (11) occurs for rotation parabolic reflector (9)
The beam inlet into Fourier infrared spectrograph (10) is injected, obtains black body radiation light using Fourier infrared spectrograph (10)
Spectrum, the temperature that blackbody radiation spectrum and step 4 are obtained are TbThe blackbody radiation spectrum S of lower blackbody furnace (11)λ,b(Tb) make ratio,
Gained ratio is system calibration coefficient Cλ；
Six, the transmitting radiation intensity I of sample to be tested (4) is calculatedλ,sam；
In formula, Iλ,b(Tb) indicate temperature TbUnder process
The spectral radiance power that Planck function is calculated；
Seven, the emissivity ε (T of sample to be tested (4) is calculatedsam)；
In formula, Iλ,b(Tsam) indicate temperature TsamThe lower spectrum spoke being calculated by Planck function
Penetrate power.
8. the opaque solid material normal direction emissivity measurement dress according to claim 7 based on solar simulator heating
Set the method for carrying out emissivity measurement, it is characterised in that: spectrum spoke of the Planck function described in step 6 for the black matrix of description
Power is penetrated with the variation of wavelength, Planck function expression are as follows:
In formula, Iλ,bFor spectral radiance power, unit W/m3；λ is wavelength, unit m；c1It is logical for the first radiation
Amount is 3.7419 × 10-16W·m2；c2It is 1.4388 × 10 for the second radiation flux-2m·K。
9. the opaque solid material normal direction emissivity measurement dress according to claim 7 based on solar simulator heating
Set the method for carrying out emissivity measurement, it is characterised in that: spectrum spoke of the Planck function described in step 7 for the black matrix of description
Power is penetrated with the variation of wavelength, Planck function expression are as follows:
In formula, Iλ,bFor spectral radiance power, unit W/m3；λ is wavelength, unit m；c1It is logical for the first radiation
Amount is 3.7419 × 10-16W·m2；c2It is 1.4388 × 10 for the second radiation flux-2m·K。
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