CN109004096A - A kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode - Google Patents
A kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode Download PDFInfo
- Publication number
- CN109004096A CN109004096A CN201810840601.1A CN201810840601A CN109004096A CN 109004096 A CN109004096 A CN 109004096A CN 201810840601 A CN201810840601 A CN 201810840601A CN 109004096 A CN109004096 A CN 109004096A
- Authority
- CN
- China
- Prior art keywords
- layer
- light emitting
- organic light
- emitting diode
- fluorescence organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
Abstract
The simple and efficient blue-fluorescence Organic Light Emitting Diode the present invention relates to a kind of structure, belong to basic electrical component technical field, which includes the substrate being cascading, anode layer, anode interface layer, hole transport and luminescent layer, electron transfer layer, cathode interface layer and cathode layer.Wherein, hole transport and luminescent layer doped with 2- methyl -9,10- bis- (2- naphthalene) anthracene of 1-4- bis--[4- (N, N- diphenyl) amino] styryl benzene by being made.Blue-fluorescence Organic Light Emitting Diode not only has simple structure, and efficiency also with higher overcomes multilayered structure in the prior art and is conducive to the technology prejudice that final efficiency improves, can be widely used in the fields such as high efficiency organic light emitting display and illumination.
Description
Technical field
The invention belongs to basic electrical component technical fields, and in particular to a kind of structure is simple and efficient blue-fluorescence
Organic Light Emitting Diode.
Background technique
U.S. Pope in 1963 etc. has found this phenomenon of electroluminescent by direct current logical on monocrystalline anthracene for the first time, and
The device (such as Fig. 1) of this single layer structure causes driving voltage to be up to 400V since organic layer anthracene is excessively too thick (20 microns), and
Luminous efficiency and brightness are all extremely low, therefore do not receive significant attention.What Tang in 1987 et al. was proposed has hole transport
Double-layer structure device (such as Fig. 2).Compared with single layer structure, double-layer structure substantially increases hole note because of the introducing of hole transmission layer
Enter, so this device architecture can efficiently solve the injection, transmission and Complex Problem of carrier, to reduce driving electricity
Pressure, and improve device brightness.Japanese Adachi et al. proposes three layer device structures within 1988, they are in double-layer structure
On the basis of the three-decker (such as Fig. 3) that extends, its feature is that hole transmission layer, luminescent layer, electron transfer layer are respectively adopted
Different materials can be such that device architecture energy level matches well；And Carrier recombination and exciton diffusion are limited at luminescent layer
Interior, recombination region reduces the quenching of exciton far from electrode, at the same also can equilbrium carrier injection efficiency, so as to
The luminous efficiency and brightness for improving device, the disadvantage is that increasing the complexity of preparation process.In recent years, people are to optimize organic hair
The carrier transport ability of level-density parameter degree and balancing device between optical diode (OLED) device function layer is to have improved
The luminous efficiency of organic electroluminescence devices can introduce the functional layer of a variety of different roles (as schemed in the design of practical OLED device
4) hole blocking layer and electronic barrier layer are introduced, for example.Introducing for hole blocking layer and electronic barrier layer is then to utilize sky
The lower minimum non-occupied orbital (LUMO) of deeper highest occupied molecular orbital (HOMO) energy level and electronic barrier layer on cave barrier layer
Energy level stops the migration of hole and electronics respectively, reduces leakage current, limits regions of carriers, improves the luminous efficiency of device.
Since the energy level of anode layer and cathode layer and organic layer (such as hole transmission layer, electron transfer layer) mismatches.Meanwhile
There are the microdefects such as pin hole, crystal boundary for anode layer and cathode layer itself, and anode layer and cathode layer is needed to introduce anodic interface respectively
Layer (hole injection layer) and cathode interface layer (electron injecting layer) carry out moditied processing, and hole and electricity on the one hand can be effectively reduced
The injection barrier of son makes hole and electronics be easier to be injected into organic layer from anode and cathode, to reduce the starting electricity of device
Pressure and operating voltage, improve the power efficiency of device.In addition, anode interface layer and cathode interface layer also help improve electrode with
Interfacial characteristics between organic layer also function to very effective effect for reducing leakage current, improving device stability, therefore existing
Have in OLED structure, anode interface layer and cathode interface layer are all used as essential functional decorative layer.
For luminous efficiency, the brightness for improving OLED device, the starting voltage and operating voltage of OLED device are reduced, is routinely ground
Study carefully thinking be realized by increasing corresponding functional layer, such as hole transmission layer introducing improved compared to single layer structure it is luminous
Efficiency and brightness, and reduce driving voltage；Three-decker (hole transmission layer, luminescent layer and electron transfer layer) compares two layers of knot
Structure improves luminous efficiency and brightness.The OLED device of current practice substantially using three layers and three layers or more structures,
Although single layer and double-layer structure structure are simple, since the performances such as luminous efficiency, brightness difference is not used substantially.
Total colouring and solid-state lighting of the blue light for realization based on OLED as one of three primary colors is essential.
Compared with high efficiency, the feux rouges of long-life and green light OLED, blue-fluorescence OLED efficiency and in terms of there are still property
The low problem of energy.Wherein, restrict blue-fluorescence OLED device performance bottleneck be exactly the greater band gap of blue light emitting material (about
3.0eV), broad-band gap organic material is difficult to meet the dual requirements of high fluorescence efficiency and stable structure simultaneously.On the one hand, broad-band gap
Very big conjugated structure cannot be had by limiting luminescent material, i.e., molecular dimension cannot be too big, and small molecule structure can reduce material
Thermal stability；On the other hand, high-efficiency fluorescence blue light is strongly depend on big molecular rigidity structure, and molecular structure rigidity is too big
Lead to the bad stability of thin-film material.It is become difficult in addition, broad-band gap injects the balance of electrons and holes with transmission, from
And constrain the raising of luminous efficiency.In addition, the exciton formation of blue light is wider with light emitting region, it is easy to cause interface to swash base compound
Object shines, and red shift occurs for spectrum, and spectral characteristic is undesirable.Since the hole mobility of hole mobile material is usually superior to electronics
The electron mobility of transmission material, thus a large amount of hole can in luminescent layer cumulative damage carrier balance, it usually needs change
Into luminous layer structure.For example, increasing the number of plies of luminescent layer or introducing hole blocking layer to reach the work for adjusting carrier balance
With this method increase process costs and complicating device architecture.
In conclusion the technology resolving ideas of this field is mainly to improve blue by increasing different functional layers at present
The performance indicators such as luminous efficiency, power efficiency and the brightness of fluorescence OLED device, therefore nowadays efficient blue-fluorescence OLED
Device substantially uses multilayered structure, i.e., several functional layers is added between the electrode and luminescent layer of blue-fluorescence OLED, such as more
Layer luminescent layer, hole blocking layer etc., although multilayered structure is conducive to final efficient realization, simultaneously using such structure
Also the series of problems such as high cost, low reliability, complex process, production efficiency is low are brought, blue-fluorescence is seriously constrained
The cost effective and large-scale application of OLED production.Therefore, it is badly in need of that a kind of structure is simple and efficient blue-fluorescence OLED
Device architecture.
Summary of the invention
In view of this, the simple and efficient organic hair of blue-fluorescence one of the objects of the present invention is to provide a kind of structure
Optical diode.
In order to achieve the above objectives, the invention provides the following technical scheme:
1, a kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode, and the diode includes hole transport
And luminescent layer and electron transfer layer, the hole transport and luminescent layer are by doped with 1-4- bis--[4- (N, N- diphenyl) amino]
2- methyl -9,10- two (2- naphthalene) anthracene of styryl benzene is made.
Preferably, the diode further includes substrate, anode layer, anode interface layer, cathode interface layer and cathode layer；It is described
Substrate, anode layer, anode interface layer, hole transport and luminescent layer, electron transfer layer, cathode interface layer and cathode layer stack gradually
Setting.
Preferably, the substrate is made of glass, quartz or polyethylene terephthalate.
Preferably, the anode layer is by tin indium oxide, Al2O3The ZnO of the doping or SnO of Fluorin doped2It is made；The cathode
Layer is made of Al, Sm or Ca.
Preferably, the anode interface layer is by poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid, MoO3、WO3Or
V2O5It is made.
Preferably, the electron transfer layer is by 4,7- diphenyl -1,10- phenanthroline, 1,3,5- tri- (1- phenyl -1H- benzos
Imidazoles -2- base) benzene, 2,9- dimethyl -4,7- biphenyl -1,10- phenanthroline, two [5- (4- tert-butyl benzene of 2,2'- (1,3- phenyl)
Base) -1,3,4- oxadiazoles] or 3- (biphenyl -4- base) -5- (4- tert-butyl-phenyl) -4- phenyl -4H-1,2,4- triazole be made.
Preferably, the cathode interface layer is by LiF, Cs2CO3Or 8-hydroxyquinoline-lithium is made.
Preferably, 1-4- bis--[4- (N, N- diphenyl) amino] benzene second in 2- methyl -9,10- bis- (2- naphthalene) anthracene
The doping of alkenyl benzene is 1-5wt%.
Preferably, the hole transport and luminescent layer with a thickness of 60-90nm.
Preferably, with a thickness of 20- when the anode interface layer is poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid
40nm, anode interface layer MoO3When with a thickness of 0.5-15nm, anode interface layer WO3When with a thickness of 0.5-5nm, anodic interface
Layer is V2O5When with a thickness of 0.5-5nm；Electron transfer layer with a thickness of 20-50nm；With a thickness of 0.5- when cathode interface layer is LiF
1nm, cathode interface layer are Cs2CO3When with a thickness of 1-20nm, with a thickness of 1-5nm when cathode interface layer is 8-hydroxyquinoline-lithium.
The working principle of the invention and beneficial effect are: the simple and efficient blue the present invention provides a kind of structure
Hole transmission layer and luminescent layer are integrated in one in the diode, it is simultaneous to construct hole transport by fluorescence Organic Light Emitting Diode
On the one hand luminescent layer reduces the interface between the hole transmission layer and luminescent layer in traditional structure, simplify the structure of device；
The thickness of the another aspect hole transport and luminescent layer light emitting layer thickness more simple than in traditional structure is big, thus expands exciton
Recombination region is conducive to the energy transfer between subject and object, the recombination rate and utilization rate of exciton is improved, to be promoted
The luminous efficiency of diode；In addition, defining the material for being used to prepare hole transport and luminescent layer and the material in the present invention
In doping, the hole transport and luminescent layer prepared with the material serve not only as the load of energy transfer between subject and object
Body, is effectively performed that exciton is compound, realizes the function of High Efficiency Luminescence, and can also play the role of regulating and controlling cavity transmission ability,
Because the dopant in material can be used as the trap for influencing charge transporting mechanism and have scattering process, make to inject from anode layer
Extra hole captured or be delayed by by scattering process by trap, play the number of cavities that regulation enters luminescent layer, in turn
The balance of carrier is improved, the final efficiency for improving diode.Blue-fluorescence Organic Light Emitting Diode in the present invention is not only
With simple structure, efficiency also with higher, overcoming the multilayered structure that current those skilled in the art generally believe has
Conducive to the technology prejudice that the final efficiency of diode improves, present invention employs the double-deck knots that people are given up due to technology prejudice
Structure not only makes the luminous efficiency of the blue-fluorescence Organic Light Emitting Diode finally prepared be significantly larger than multilayered structure in the prior art
Blue-fluorescence Organic Light Emitting Diode, and also overcome high cost brought by multilayered structure in the prior art, low reliable
Property, the series of problems such as complex process, production efficiency is low, effectively facilitated the low cost of blue-fluorescence Organic Light Emitting Diode production
Change and large-scale application have great economic value.
Detailed description of the invention
In order to keep the purpose of the present invention, technical scheme and beneficial effects clearer, the present invention provides following attached drawing and carries out
Illustrate:
Fig. 1 is the Organic Light Emitting Diode schematic diagram of single layer structure；
Fig. 2 is the Organic Light Emitting Diode schematic diagram of double-layer structure；
Fig. 3 is the Organic Light Emitting Diode schematic diagram of three-decker；
Fig. 4 is the Organic Light Emitting Diode schematic diagram of multilayered structure；
Fig. 5 is blue-fluorescence Organic Light Emitting Diode schematic diagram in the present invention；
Fig. 6 is to implement blue-fluorescence Organic Light Emitting Diode performance test figure in 1；
Fig. 7 is to implement blue-fluorescence Organic Light Emitting Diode performance test figure in 2；
Fig. 8 is to implement blue-fluorescence Organic Light Emitting Diode performance test figure in 3；
Fig. 9 is to implement blue-fluorescence Organic Light Emitting Diode performance test figure in 4；
Figure 10 is to implement blue-fluorescence Organic Light Emitting Diode performance test figure in 5；
Figure 11 is to implement blue-fluorescence Organic Light Emitting Diode performance test figure in 6；
Figure 12 is that blue-fluorescence Organic Light Emitting Diode performance test figure in 1 is implemented in comparison；
Figure 13 is that blue-fluorescence Organic Light Emitting Diode performance test figure in 2 is implemented in comparison；
Figure 14 is current-voltage (I-V) characteristic and Impedance Analysis result figure of three kinds of single hole devices in embodiment 7.
Wherein, for Fig. 6 into Figure 13, a is the maximum luminous efficiency test chart of blue-fluorescence Organic Light Emitting Diode, and b is equal
For the maximum power efficiency test chart of blue-fluorescence Organic Light Emitting Diode, c be blue-fluorescence Organic Light Emitting Diode most
Big external quantum efficiency test chart, d are electroluminescent spectrum test chart.In Figure 14, a is the I-V diagram of three kinds of single hole devices, and b is
Impedance-voltage (Z-V) figure of three kinds of single hole devices, c are phase angle-voltage of three kinds of single hole devicesFigure, d are three kinds
Capacitance-voltage (C-V) figure of single hole device.
Specific embodiment
Below by a preferred embodiment of the present invention will be described in detail.
Fig. 5 is that a kind of structure is simple and the schematic diagram of efficient blue-fluorescence Organic Light Emitting Diode in the present invention, by
Fig. 5 has substrate, anode layer, anode interface layer, hole transport are simultaneous to shine it is found that the diode is cascading from lower to upper
Layer, electron transfer layer, cathode interface layer and cathode layer.
In each embodiment,
ITO is tin indium oxide；
PEDOT:PSS is poly- (3,4- ethene dioxythiophene)-polystyrolsulfon acid；
NPB is N, N'- diphenyl-N, N'- (1- naphthalene) -1,1'- biphenyl -4,4'- diamines；
DSA-Ph is 1-4- bis--[4- (N, N- diphenyl) amino] styryl benzene, and structure is as shown in formula I；
MADN is 2- methyl -9,10- bis- (2- naphthalene) anthracene, and structure is as shown in formula II；
BPhen is 4,7- diphenyl -1,10- phenanthroline；
LiF is lithium fluoride；
Al is aluminium.
Embodiment 1
A kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode, the diode include being cascading
The glass substrate of 1mm thickness, sheet resistance be 15 Ω/ ito anode layer, the PEDOT:PSS anode interface layer of 30nm thickness, 60nm thickness
Doping be 3wt% MADN:DSA-Ph hole transport and luminescent layer, the BPhen electron transfer layer of 30nm thickness, 0.7nm thickness
LiF cathode interface layer and 100nm thickness Al cathode layer.Maximum luminous efficiency, the maximum power effect of the diode are tested respectively
Rate, maximum external quantum efficiency and electroluminescent spectrum and chromaticity coordinates, are as a result shown in Fig. 6, wherein a is maximum luminous efficiency survey in Fig. 6
Attempt, b is maximum power efficiency test chart in Fig. 6, and c is maximum external quantum efficiency test chart in Fig. 6, and d is electroluminescent in Fig. 6
Spectrum test figure, chromaticity coordinates value are listed in Table 1 below.
Embodiment 2
The difference from embodiment 1 is that doping is the MADN:DSA-Ph hole transport of 3wt% and the thickness of luminescent layer
For 70nm.Maximum luminous efficiency, maximum power efficiency, maximum external quantum efficiency and the CIE chromaticity coordinates of the diode are tested respectively,
As a result see Fig. 7, wherein a is maximum luminous efficiency test chart in Fig. 7, and b is maximum power efficiency test chart in Fig. 7, and c is in Fig. 7
Maximum external quantum efficiency test chart, d is electroluminescent spectrum test chart in Fig. 7, and chromaticity coordinates value is listed in Table 1 below.
Embodiment 3
The difference from embodiment 1 is that doping is the MADN:DSA-Ph hole transport of 3wt% and the thickness of luminescent layer
For 80nm.Maximum luminous efficiency, maximum power efficiency, maximum external quantum efficiency and the CIE chromaticity coordinates of the diode are tested respectively,
As a result see Fig. 8, wherein a is maximum luminous efficiency test chart in Fig. 8, and b is maximum power efficiency test chart in Fig. 8, and c is in Fig. 8
Maximum external quantum efficiency test chart, d is electroluminescent spectrum test chart in Fig. 8, and chromaticity coordinates value is listed in Table 1 below.
Embodiment 4
The difference from embodiment 1 is that doping is the MADN:DSA-Ph hole transport of 3wt% and the thickness of luminescent layer
For 90nm.Maximum luminous efficiency, maximum power efficiency, maximum external quantum efficiency and the CIE chromaticity coordinates of the diode are tested respectively,
As a result see Fig. 9, wherein a is maximum luminous efficiency test chart in Fig. 9, and b is maximum power efficiency test chart in Fig. 9, and c is in Fig. 9
Maximum external quantum efficiency test chart, d is electroluminescent spectrum test chart in Fig. 9, and chromaticity coordinates value is listed in Table 1 below.
Embodiment 5
Difference with embodiment 3 is that DSA-Ph doping is 1wt% in MADN:DSA-Ph hole transport and luminescent layer.
Maximum luminous efficiency, maximum power efficiency, maximum external quantum efficiency and the CIE chromaticity coordinates for testing the diode respectively, are as a result shown in
Figure 10, wherein a is maximum luminous efficiency test chart in Figure 10, and b is maximum power efficiency test chart in Figure 10, and c is most in Figure 10
Big external quantum efficiency test chart, d is electroluminescent spectrum test chart in Figure 10, and chromaticity coordinates value is listed in Table 1 below.
Embodiment 6
Difference with embodiment 5 is that DSA-Ph doping is 5wt% in MADN:DSA-Ph hole transport and luminescent layer.
Maximum luminous efficiency, maximum power efficiency, maximum external quantum efficiency and the CIE chromaticity coordinates for testing the diode respectively, are as a result shown in
Figure 11, wherein a is maximum luminous efficiency test chart in Figure 11, and b is maximum power efficiency test chart in Figure 11, and c is most in Figure 11
Big external quantum efficiency test chart, d is electroluminescent spectrum test chart in Figure 11, and chromaticity coordinates value is listed in Table 1 below.
Comparative example 1
A kind of blue-fluorescence Organic Light Emitting Diode, the diode include the 1mm thickness being cascading glass substrate,
Sheet resistance be 15 Ω/ ito anode layer, the PEDOT:PSS anode interface layer of 30nm thickness, 35nm thickness NPB hole transmission layer,
The doping of 45nm thickness be the MADN:DSA-Ph luminescent layer of 3wt%, the BPhen electron transfer layer of 30nm thickness, 0.7nm thickness LiF
The Al cathode layer of cathode interface layer and 100nm thickness.The maximum luminous efficiency of the diode, maximum power efficiency, most are tested respectively
Big external quantum efficiency and electroluminescent spectrum and chromaticity coordinates, the result is shown in Figure 12, wherein a is maximum luminous efficiency test in Figure 12
Scheme, b is maximum power efficiency test chart in Figure 12, and c is maximum external quantum efficiency test chart in Figure 12, and d is electroluminescent hair in Figure 12
Light spectrum test figure, chromaticity coordinates value are listed in Table 1 below.
Comparative example 2
Difference with comparative example 1 is that hole transmission layer is the MADN with a thickness of 35nm.The diode is tested respectively
Maximum luminous efficiency, maximum power efficiency, maximum external quantum efficiency and CIE chromaticity coordinates, the result is shown in Figure 13, wherein a in Figure 13
For maximum luminous efficiency test chart, b is maximum power efficiency test chart in Figure 13, and c is maximum external quantum efficiency test in Figure 13
Scheme, d is electroluminescent spectrum test chart in Figure 13, and chromaticity coordinates value is listed in Table 1 below.
Comparative example 3
Existing literature: C.H.Liao, M.T.Lee, C.H.Tsai, C.H.Chen, Highly efficient blue
organic light-emitting devices incorporating a composite hole transport
The blue-fluorescence Organic Light Emitting Diode recorded in layer, Appl.Phys.Lett.86 (2005) 203507, structure are as follows:
ITO/CFx/[NPB:CuPc](40nm)/NPB(30nm)/[MADN:DSA-Ph](40nm)/Alq3(10nm)/LiF(1nm)/Al
(200nm), wherein ITO is anode；CFxFor anode interface layer；[NPB:CuPc] (40nm)/NPB (30nm) is that the double-deck hole passes
Defeated layer；[MADN:DSA-Ph] (40nm) is blue luminescence layer；Alq3(10nm) is electron transfer layer；LiF (1nm) is yin
Pole boundary layer；Al (200nm) is cathode.The diode maximum luminous efficiency is 16.2cd/A, maximum power efficiency 7.9lm/
W, maximum external quantum efficiency are that 8.7%, 1931CIE chromaticity coordinates is (0.15,0.29).
Comparative example 4
Existing literature: S.Yue, S.Zhang, Z.Zhang, Y.Wu, P.Wang, R.Guo, Y.Chen, D.Qu, Q.Wu,
Y.Zhao,S.Liu,Improved power efficiency of blue fluorescent organic light-
The indigo plant recorded in emitting diode with intermixed host structure, J.Lumin.143 (2013) 619
Color fluorescence Organic Light Emitting Diode, structure are as follows: ITO/NPB (40nm)/[NPB:DSA-Ph] (9nm)/[NPB:MADN:DSA-
Ph] (2nm)/[MADN:DSA-Ph] (9nm)/BPhen (40nm)/LiF (1nm)/Al (100nm), wherein ITO is anode；NPB
(40nm) is hole transmission layer；[NPB:DSA-Ph](9nm)/[NPB:MADN:DSA-Ph](2nm)/[MADN:DSA-Ph]
(9nm) is multilayer blue luminescence layer；BPhen (40nm) is electron transfer layer；LiF (1nm) is cathode interface layer；Al
(100nm) is cathode.The diode maximum luminous efficiency is 10.5cd/A, maximum power efficiency 8.7lm/W, 1931CIE color
Coordinate is (0.15,0.29).
According to the test result of Fig. 6 to Figure 13, the structure prepared to embodiment 1 into embodiment 6 is simple and efficient
The blue-fluorescence Organic Light Emitting Diode prepared in blue-fluorescence Organic Light Emitting Diode and comparative example 1 and comparative example 2 it is each
Performance data is counted, and statistical result is shown in Table 1, and simultaneously that each performance data of diode in comparative example 3 and comparative example 4 is same
When sieve be listed in Table 1.
Table 1
As shown in Table 1, the maximum for each blue-fluorescence Organic Light Emitting Diode that embodiment 1 is prepared into embodiment 6 shines
Efficiency, maximum power efficiency, maximum external quantum efficiency are higher than comparative example 1, comparative example 2 and comparative example 4, maximum power efficiency and
Maximum external quantum efficiency is higher than comparative example 3, wherein blue-fluorescence Organic Light Emitting Diode of the comparative example 1 into comparative example 4 is equal
With multilayer labyrinth.It has been found by contrast that being only the blue-fluorescence Organic Light Emitting Diode relatively tool of double-layer structure in the present invention
There is the blue-fluorescence Organic Light Emitting Diode of multilayer labyrinth to have higher efficiency.
Embodiment 7
Verify the cavity transmission ability of MADN:DSA-Ph hole transport and luminescent layer that doping is 3wt%
The single hole device being made of building NPB, MADN and doping for tri- kinds of materials of MADN:DSA-Ph of 3wt%
Part, and three kinds of single hole devices are analyzed by current-voltage (I-V) characteristic and Impedance Analysis respectively, analyze result
See Figure 14, wherein in Figure 14 a be three kinds of single hole devices I-V diagram, b is impedance-voltage of three kinds of single hole devices in Figure 14
(Z-V) figure, c is phase angle-voltage of three kinds of single hole devices in Figure 14Scheme, d is the electricity of three kinds of single hole devices in Figure 14
Appearance-voltage (C-V) figure.
The structure difference of three kinds of single hole devices is as follows:
Device H1:ITO/PEDOT:PSS/NPB (90nm)/Al (100nm)
Device H2:ITO/PEDOT:PSS/MADN (60nm)/NPB (30nm)/Al
Device H3:ITO/PEDOT:PSS/ [MADN:DSA-Ph] (60nm)/NPB (30nm)/Al
Wherein, the NPB of the 30nm thickness in device H2 and device H3 plays the role of electronic barrier layer.
By a in Figure 14 it is found that under identical voltage, device H1 shows maximum current, is secondly device H2 and device H3, table
The MADN:DSA-Ph that bright doping is 3wt% has minimum hole mobility.
By c in b in Figure 14 and 14 it is found that three kinds of single hole devices are 10 at low-voltage (< 1.3V)5The high impedance of Ω
Phase with -90 °, shows state of insulation, and with the increase of voltage, three kinds of single hole devices all show semiconductor shape
State, since it is observed that the impedance sharply declined and about 0 ° of phase.Corresponding to Z-V figure andThe shift voltage of figure is according to device
Part H1 < device H2 < device H3 is sequentially increased, it is sufficient to illustrate the cavity transmission ability of three kinds of single hole devices with identical sequence
Gradually weaken.
By d in Figure 14 it is found that three kinds of single hole devices observe almost the same capacitor at low voltage, but with voltage
Increase, capacitor due to injection hole accumulation and increase, as voltage further increases, observe capacitor occur peak value (figure
Shown in middle arrow), it means that hole-electron start it is compound, from Figure 14 in d as can be seen that reach the corresponding voltage of peak value
For the increase of device H1 (3.1V) < device H2 (6.1V) < device H3 (9.0V) sequence, it is sufficient to show that hole transport gradually decreases.
The analysis to a, b, c, d in Figure 14 is integrated it is found that hole mobility is according to μNPB>μMADN>μThe MADN of 3wt%: DSA-Ph's
Sequence reduces.
Substrate is in addition to that can also be quartz or polyethylene terephthalate for glass in the present invention；Anode layer in addition to
It can also be Al for tin indium oxide2O3The ZnO of the doping or SnO of Fluorin doped2；Anode interface layer is in addition to for poly- (3,4- ethylene two
Oxygen thiophene)-polystyrolsulfon acid can also be MoO3、WO3Or V2O5；Electron transfer layer in addition to for 4,7- diphenyl -1,10- it is luxuriant and rich with fragrance
Sieve quinoline, can also be luxuriant and rich with fragrance for 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene, 2,9- dimethyl -4,7- biphenyl -1,10-
Sieve quinoline, 2,2'- (1,3- phenyl) two [5- (4- tert-butyl-phenyl) -1,3,4- oxadiazoles] or 3- (biphenyl -4- base) -5- (uncle 4-
Butyl phenyl) -4- phenyl -4H-1,2,4- triazole；Cathode interface layer is in addition to that can also be Cs for LiF2CO3Or 8-hydroxyquinoline-
Lithium, cathode is in addition to that for Al, can also be Sm or Ca, and each functional layer is using can reach identical technical effect after above-mentioned material.
Finally, it is stated that preferred embodiment above is only used to illustrate the technical scheme of the present invention and not to limit it, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (10)
1. a kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode, which is characterized in that the diode includes
Hole transport and luminescent layer and electron transfer layer, the hole transport and luminescent layer are by doped with 1-4- bis--[4- (N, N- hexichol
Base) amino] 2- methyl -9,10- two (2- naphthalene) anthracene of styryl benzene is made.
2. a kind of structure as described in claim 1 is simple and efficient blue-fluorescence Organic Light Emitting Diode, feature exist
In the diode further includes substrate, anode layer, anode interface layer, cathode interface layer and cathode layer；The substrate, anode layer,
Anode interface layer, hole transport and luminescent layer, electron transfer layer, cathode interface layer and cathode layer are cascading.
3. a kind of structure as described in claim 1 is simple and efficient blue-fluorescence Organic Light Emitting Diode, feature exist
In the substrate is made of glass, quartz or polyethylene terephthalate.
4. a kind of structure as described in claim 1 is simple and efficient blue-fluorescence Organic Light Emitting Diode, feature exist
In the anode layer is by tin indium oxide, Al2O3The ZnO of the doping or SnO of Fluorin doped2It is made；The cathode layer is by Al, Sm or Ca
It is made.
5. a kind of structure as described in claim 1 is simple and efficient blue-fluorescence Organic Light Emitting Diode, feature exist
In the anode interface layer is by poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid, MoO3、WO3Or V2O5It is made.
6. a kind of structure as described in claim 1 is simple and efficient blue-fluorescence Organic Light Emitting Diode, feature exist
In the electron transfer layer is by 4,7- diphenyl -1,10- phenanthroline, 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl)
Benzene, 2,9- dimethyl -4,7- biphenyl -1,10- phenanthroline, [5- (4- the tert-butyl-phenyl) -1,3,4- of 2,2'- (1,3- phenyl) two
Oxadiazoles] or 3- (biphenyl -4- base) -5- (4- tert-butyl-phenyl) -4- phenyl -4H-1,2,4- triazole be made.
7. a kind of structure as described in claim 1 is simple and efficient blue-fluorescence Organic Light Emitting Diode, feature exist
In the cathode interface layer is by LiF, Cs2CO3Or 8-hydroxyquinoline-lithium is made.
8. as a kind of described in any item structures of claim 1-7 are simple and efficient blue-fluorescence Organic Light Emitting Diode,
It is characterized in that, 1-4- bis--[4- (N, N- diphenyl) amino] styryl in 2- methyl -9,10- bis- (2- naphthalene) anthracene
The doping of benzene is 1-5wt%.
9. a kind of structure as claimed in claim 8 is simple and efficient blue-fluorescence Organic Light Emitting Diode, feature exist
In, the hole transport and luminescent layer with a thickness of 60-90nm.
10. a kind of structure as claimed in claim 9 is simple and efficient blue-fluorescence Organic Light Emitting Diode, feature exist
In with a thickness of 20-40nm, anodic interface when the anode interface layer is poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid
Layer is MoO3When with a thickness of 0.5-15nm, anode interface layer WO3When with a thickness of 0.5-5nm, anode interface layer V2O5Shi Houdu
For 0.5-5nm；Electron transfer layer with a thickness of 20-50nm；With a thickness of 0.5-1nm, cathode interface layer when cathode interface layer is LiF
For Cs2CO3When with a thickness of 1-20nm, with a thickness of 1-5nm when cathode interface layer is 8-hydroxyquinoline-lithium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840601.1A CN109004096A (en) | 2018-07-27 | 2018-07-27 | A kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840601.1A CN109004096A (en) | 2018-07-27 | 2018-07-27 | A kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109004096A true CN109004096A (en) | 2018-12-14 |
Family
ID=64598401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810840601.1A Pending CN109004096A (en) | 2018-07-27 | 2018-07-27 | A kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109004096A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585668A (en) * | 2019-01-10 | 2019-04-05 | 京东方科技集团股份有限公司 | OLED display device, display panel, OLED display device preparation method |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1773746A (en) * | 2004-11-12 | 2006-05-17 | 三星Sdi株式会社 | Organic electroluminescent device |
| CN101179115A (en) * | 2007-12-17 | 2008-05-14 | 中国科学院长春应用化学研究所 | White light organic electroluminescent device and method for fabricating the same based on fluorochrome |
| CN102171848A (en) * | 2008-10-06 | 2011-08-31 | 索尼公司 | Organic electroluminescent element and display device |
| CN103606633A (en) * | 2013-11-28 | 2014-02-26 | 电子科技大学 | Organic electroluminescence and photovoltaic integration device and manufacturing method |
| CN104051630A (en) * | 2013-03-11 | 2014-09-17 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104377309A (en) * | 2014-10-14 | 2015-02-25 | 天津理工大学 | Low-voltage organic electroluminescent blue light emitting device and preparation method thereof |
| CN104576958A (en) * | 2013-10-11 | 2015-04-29 | 三星显示有限公司 | Organic light-emitting device |
| CN105185908A (en) * | 2015-08-10 | 2015-12-23 | 华南理工大学 | Solution-processed organic-inorganic planar heterojunction light emitting diode and manufacturing method thereof |
| CN106848071A (en) * | 2015-10-30 | 2017-06-13 | 吴忠帜 | Electro photo-luminescent apparatus |
-
2018
- 2018-07-27 CN CN201810840601.1A patent/CN109004096A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1773746A (en) * | 2004-11-12 | 2006-05-17 | 三星Sdi株式会社 | Organic electroluminescent device |
| CN101179115A (en) * | 2007-12-17 | 2008-05-14 | 中国科学院长春应用化学研究所 | White light organic electroluminescent device and method for fabricating the same based on fluorochrome |
| CN102171848A (en) * | 2008-10-06 | 2011-08-31 | 索尼公司 | Organic electroluminescent element and display device |
| CN104051630A (en) * | 2013-03-11 | 2014-09-17 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104576958A (en) * | 2013-10-11 | 2015-04-29 | 三星显示有限公司 | Organic light-emitting device |
| CN103606633A (en) * | 2013-11-28 | 2014-02-26 | 电子科技大学 | Organic electroluminescence and photovoltaic integration device and manufacturing method |
| CN104377309A (en) * | 2014-10-14 | 2015-02-25 | 天津理工大学 | Low-voltage organic electroluminescent blue light emitting device and preparation method thereof |
| CN105185908A (en) * | 2015-08-10 | 2015-12-23 | 华南理工大学 | Solution-processed organic-inorganic planar heterojunction light emitting diode and manufacturing method thereof |
| CN106848071A (en) * | 2015-10-30 | 2017-06-13 | 吴忠帜 | Electro photo-luminescent apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585668A (en) * | 2019-01-10 | 2019-04-05 | 京东方科技集团股份有限公司 | OLED display device, display panel, OLED display device preparation method |
| US11737296B2 (en) | 2019-01-10 | 2023-08-22 | Boe Technology Group Co., Ltd. | OLED display device, display panel and manufacturing method of OLED display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107507918B (en) | A kind of perovskite light emitting diode and preparation method thereof | |
| CN104681731B (en) | A kind of Ca-Ti ore type electroluminescent device and preparation method thereof | |
| Huang et al. | Achieving high‐efficiency polymer white‐light‐emitting devices | |
| CN100484353C (en) | Organic electroluminescent part | |
| CN102136550B (en) | White light organic electroluminescent device and preparation method thereof | |
| CN108281559B (en) | A kind of high efficiency, the low phosphorescence Organic Light Emitting Diode that roll-offs | |
| CN105261707A (en) | Novel quantum dot luminescent device | |
| CN101635334A (en) | Red organic electroluminescence device and preparation method thereof | |
| CN102651454B (en) | Electroluminescent device, display device and preparation method of electroluminescent device | |
| CN100470877C (en) | Organic electro phosphorescent device and its preparation method | |
| CN108011047A (en) | A kind of glow organic electroluminescent device | |
| CN108666432B (en) | Organic light-emitting diode containing multistage organic semiconductor heterojunction | |
| CN108963089A (en) | Quanta point electroluminescent device | |
| CN107452886A (en) | A kind of laminated film and Organic Light Emitting Diode and preparation method thereof | |
| CN109256473A (en) | White organic LED and preparation method | |
| CN107086271B (en) | A kind of fluorescent/phosphorescent mixed white light OLED | |
| Niu et al. | White polymeric light-emitting diodes with high color rendering index | |
| CN107452887A (en) | A kind of fluorescent/phosphorescent mixed white light OLED | |
| CN108807701B (en) | White organic light emitting diode comprising thermally activated delayed fluorescent material and preparation method thereof | |
| CN102842682A (en) | Stacked organic electroluminescence device and manufacturing method thereof | |
| CN104882545A (en) | Organic electroluminescent device and preparation method thereof | |
| CN109004096A (en) | A kind of structure is simple and efficient blue-fluorescence Organic Light Emitting Diode | |
| CN109616578B (en) | Fluorescence/phosphorescence mixed white light organic light emitting diode and preparation method thereof | |
| CN101777626A (en) | Micro molecular white-light organic light-emitting device produced by wet method | |
| CN101447554A (en) | Organic electroluminescent diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181214 |