CN109001122A - The optical constant measuring device and method of gradient or graded index films - Google Patents
The optical constant measuring device and method of gradient or graded index films Download PDFInfo
- Publication number
- CN109001122A CN109001122A CN201811149497.8A CN201811149497A CN109001122A CN 109001122 A CN109001122 A CN 109001122A CN 201811149497 A CN201811149497 A CN 201811149497A CN 109001122 A CN109001122 A CN 109001122A
- Authority
- CN
- China
- Prior art keywords
- film
- sample
- thinned
- optical constant
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The present invention relates to a kind of gradient or the measuring devices and method of the optical constant of graded index films.Described device includes vacuum system, ellipsometric parameter detection system, film thickness monitoring system and ion source, and the vacuum system includes vacuum chamber and sample stage；The film thickness monitoring system includes quartz crystal oscillator film thickness gauge；The sample stage is mounted at the top of vacuum chamber, and ion source is mounted on vacuum chamber bottom, the ion beam delivery outlet face sample stage setting of ion source.Measurement method is: first measuring the initial ellipsometric parameter of gradient-index film sample, film is carried out with ion beam thinned, the ellipsometric parameter of thinned rear film is measured again, thinned, testing procedure is repeated, until film is thinned to setting step-length or less, the refractive index and extinction coefficient of last a thin layer can be obtained, the optical constant of each thin layer thereon can be successively obtained on this basis, the final optical constant distribution for obtaining film sample through-thickness, realizes the measurement of gradient-index film optical constant.
Description
Technical field
The present invention relates to the field of measuring technique of thin-film optical constant, in particular to a kind of gradient or graded index films
Optical constant measuring device and method.
Technical background
Common optical thin film such as antireflection film, high reflection film, filter coating, polarizing coating etc. are typically all with two kinds
The different Coating Materials of (or a variety of) refractive index, the multi-layer film structure that alternating is coated with.In these films, although adjacent two layers
The refractive index of film is different, but for same tunic, and but approaches uniformity is consistent for internal refractive index, does not become with thickness
Change, is the uniform films of stable refractive index.Since multilayer film is between layers there is interface, and interface is easiest to enrichment and lacks
It falls into and impurity, the absorption coefficient of interface often absorbs big several orders of magnitude than body, and in the presence of very big stress, this is usually led
Film is caused to be easy to damage under light laser, therefore the presence at interface is that damage threshold is not in laser system for assembly of thin films
High major reason.
On the other hand, numerous studies have shown that the electric-field intensity distribution inside film be also influence its damage from laser ability
An important factor for: if film layer and the electric field strength of film layer interface are larger, it is difficult to improve the laser deflection of entire membrane system
Value.Therefore it needs constantly to optimize in design, seeks reasonable film structure, make the peak value of standing-wave electric field intensity far from interface
Region can improve the resisting laser damage ability of film to a certain extent, but due to the limitation of layered medium membrane system itself, very
Difficulty makes all peak values of electric field strength all far from film layer interface, therefore obtainable effect is very limited.
Since the function of monofilm is very limited, usually used optical thin film is typically all multilayer film, but stratified film
Between the presence at interface limit the raising of laser damage in thin films threshold value.If a kind of the thin of refractive index consecutive variations can be prepared
Film, so that the interface between film layer and film layer is not present, then it can be to avoid the above problem.Gradient-index film or gradual change
Index film is consecutive variations along film thickness direction refractive index and extinction coefficient, interface is not present, it is possible to solve
This problem.Therefore the preparation in relation to gradient-index film and application study cause the extensive pass of domestic and international researcher already
Note.But for many years, progress is very slow always, and major obstacle is gradient-index film optical constant, and (refractive index disappears
Backscatter extinction logarithmic ratio) it can not detect.For uniform monolayers film, any problem has been not present in the detection of optical constant, using ellipse inclined
Instrument is obtained with accurate measurement result.But for Gradient Film, still lack effective refractive index detection means and method, this leads
Thin-film technique research is caused to be difficult to make a breakthrough.At present for the detection of gradient-index film, two ways is mainly used: first is that
The gradient distribution of refractive index is first estimated, then uses system design of optical film software, calculates the optical transmittance or anti-of the film
Rate is penetrated, then is compared with the result of actual test, if deviation is larger, the distribution of refractive index is estimated in adjustment repeatedly, until
Calculated value and measured value are close, that is, think to estimate the actual distribution that index distribution is exactly sample refractive index.Second is that entering from technique
Hand, the refractive index and extinction coefficient of the uniform monolayers film first prepared under clear different technology conditions.Due to the preparation of gradient film
It is the variation by technological parameter to realize, therefore when actually preparing Gradient Film, according to preparatory design adjusting process parameter, no
With technological parameter, corresponding thin-film optical constant is the optical constant for being considered the part Gradient Film.It is clear that both sides
Method is not the true reflection of film sample optical constant, therefore there is very large deviation with actual conditions.
Summary of the invention
The present invention provides a kind of gradient or the optical constant measuring devices and method of graded index films, existing to solve
There is the problem of technology is unable to measure gradient or graded index.
To achieve the object of the present invention, technical solution provided by the invention is:
A kind of optical constant measuring device of gradient or graded index films, including vacuum system, ellipsometric parameter detection system,
Film thickness monitoring system and ion source, the vacuum system include vacuum chamber and sample stage；The film thickness monitoring system includes quartz
Crystal oscillator film thickness gauge；
The sample stage is mounted on the top of vacuum chamber, and ion source is mounted on vacuum chamber bottom, and the two is opposite and puts, ion source
The setting of ion beam delivery outlet face sample stage.
Further, the optical source wavelength is 300-900 nm；The test angle of light is 65 °.
Further, the ion energy of the ion source is between 0-3000 eV.
According to the method that the optical constant measuring device of above-mentioned gradient or graded index films measures, including it is following
Step:
The initial geometric thickness calibration of step 1, film sample: it is measured using geometric thickness of the contourgraph to film, obtains it
Original depth information determines thickness step-length thinned every time according to the test request of sample；
Step 2, by sample to be tested clamping on the lower surface of sample stage, coated surface face ion source takes out vacuum chamber
Vacuum reaches the working vacuum degree of ion source；
Step 3, the initial ellipse breath that believes one side only that film sample is measured using ellipsometric parameter detection system, i.e. ellipsometric parameter ΨnAnd Δn；
Step 4 opens ion source, the thickness of a thinned step-length is performed etching to film with ar-ion beam, using quartz crystal oscillator
The thinned film thickness of film thickness gauge detection, the thicknesses of layers etched away are denoted as dn, corresponding LnLayer；
The ellipsometric parameter Ψ that rear film sample is thinned is measured using ellipsometric parameter detection systemn-1And Δn-1；
Step 5 is again turned on ion source, film is performed etching using ar-ion beam it is thinned, while use quartz crystal oscillator film thickness
The thinned film thickness of instrument detection, the thicknesses of layers etched away are denoted as dn-1(corresponding Ln-1Layer)；
Measure the ellipse breath Ψ that believes one side only that rear film sample is thinned again using ellipsometric parameter detection systemn-2And Δn-2；
Step 5 is repeated in step 6, until film thickness is thinned to thickness step-length hereinafter, corresponding L1The film thickness of layer is denoted as
d1, using the ellipse breath Ψ that believes one side only of ellipsometric parameter detection system measurement sample1And Δ1；
Step 7, data process&analysis: according to Ψ1, Δ1And d1Numerical value, calculate L1The refractive index n of layer film1With delustring system
Number k1；
Step 8 successively calculates L2、L3Until LnThe refractive index and extinction coefficient of layer, to obtain film sample through-thickness
Optical constant distribution, realizes the measurement of gradient-index film optical constant.
Compared with prior art, the invention has the advantages that
1, the present invention is not only applicable to the measurement of gradient or graded index films, is also applied for common multilayer dielectric film refraction
The measurement of rate distribution can be used for multilayer dielectric film refractive index and extinction coefficient analysis, can really reflect film sample optical constant.
2, the present invention available film sample optical constant (refractive index and extinction coefficient) is true along the distribution of film thickness direction
The technology controlling and process situation of fixed each tunic provides foundation.
3, the present invention is applicable not only to the measurement of dielectric film gradient or graded index, is also suitable for extinction coefficient and thickness
The detection of degree, while being suitable for the measurement of common multilayer dielectric film index distribution.
Detailed description of the invention
Fig. 1 is the device of the invention structural schematic diagram；
Fig. 2 is that schematic diagram is thinned in gradient-index film.
In figure, 1- light source, the 2- polarizer, 3- wave plate, 4- vacuum chamber, 5- sample stage, 6- sample to be tested, 7- ion source, 8-
Quartz crystal oscillator film thickness gauge, 9- analyzer, 10- detector, 11- computer.
Specific embodiment
Below with reference to embodiment and attached drawing, the present invention is described further, but guarantor of the invention should not be limited with this
Protect range.
The optical constant measuring device of shown in Figure 1 a kind of gradient or graded index films, including vacuum system,
Ellipsometric parameter detection system, film thickness monitoring system and ion source 7, the vacuum system include vacuum chamber 4 and sample stage 5；It is described
Film thickness monitoring system includes quartz crystal oscillator film thickness gauge 8；
Sample stage 5 is mounted on the top of vacuum chamber 4, and ion source 7 is mounted on 4 bottom of vacuum chamber, and the two is opposite and puts, ion source 7
Ion beam delivery outlet face sample stage setting.
Optical source wavelength is 300-900 nm；The test angle of light is 65 °.
The ion energy of ion source 7 is between 0-3000 eV.
Described vacuum system is mainly used for being supplied to the environment of ion source normal work, and vacuum chamber can achieve 1 × 10-4 The vacuum degree of Pa.
Ellipsometric parameter detection system is made of light source 1, the polarizer 2, wave plate 3, analyzer 9 and detector 10, described to be polarized
Device 2 and wave plate 3 are set in turn in the input path of light source 1, and analyzer 9 and detector 10 are disposed on emergent ray,
Ellipsometric parameter of the system for film sample measures, the natural light (wave-length coverage 300-900 nm) that light source 1 issues, through being polarized
Become linearly polarized light after device 2, after quarter-wave plate, through the window being arranged on vacuum chamber, is incident on film with 65 °
Sample surfaces are connect after analyzer 9 by photodetector 10 after film surface reflects, then through another side window of vacuum chamber
It receives.The ellipsometric parameter Ψ and Δ of film can be measured according to polarization and the correlation theory of delustring, ellipsometric parameter detection system, wherein
In formulaWithRespectively p light and s light film surface reflection coefficient,WithFor the phase difference of p light and s light.
Described quartz crystal oscillator film thickness gauge 8 is used to measure the geometric thickness information of film.When sample stage on 6 clamping of sample to be tested
After 5, the electrode on surface is connect with quartz crystal oscillator film thickness gauge, and pellicular front to be measured faces ion source.Quartz crystal oscillator film thickness gauge is opened
After beginning work, according to the oscillation frequency of quartz wafer, it is demarcated with the film thickness of actual measurement.
Described ion source 7 is a cold-cathode source 7, it constitute ion beam etching system, ion source 7 can emit argon from
Beamlet, ion energy 0-3000 eV is adjustable.The output ion energy that ion source is adjusted in described embodiment is 800eV, line
Density is 2mA/cm2, output ion beam is obtained, the film for sample surfaces performs etching thinned.
Computer control system 11 connects with each functional component, carries out Data Analysis Services.Pass through quartz crystal oscillator film thickness
The geometric thickness of monitoring system acquisition film.By detector 10, the polarizer 2, the cooperation of wave plate 3 and analyzer 9 be can get thin
The ellipsometric parameter information of film surface.Meanwhile for controlling the water of the ion energy of ion source 7 and output parameter and sample stage
Level state etc..
Referring to fig. 2, it is surveyed using the optical constant measuring device of gradient provided by the invention or graded index films
The method of amount, comprising the following steps:
(1) the initial geometric thickness calibration of film sample: start before testing gradient film optical constant, first using contourgraph to thin
The geometric thickness of film measures, and measuring its original depth is 358nm, it may be determined that thinned thickness step-length is 10 nm every time.It is thick
Degree step-length can be set according to the specific requirement of sample, and step-length is smaller, and resolution ratio is higher, but testing efficiency is lower.
The requirement of sample to be tested 6: gradient-index film to be measured is deposited on quartz wafer with furnace with workpiece in the preparation
On, two surfaces of quartz wafer are previously prepared Au electrode, and one of surface is completely covered by Au film, another surface perimeter
For Au electrode, centre is exposed quartz wafer, and gradient-index film deposition to be measured is on a surface.The present apparatus waits for
Surveying film must be plated on quartz wafer, which is standard currently on the market, is coated with electrode in advance.In order to
Then the index distribution for measuring plated film under certain technique is deposited film using the quartz wafer for having plated electrode of standard
It can be used as sample to be tested 6 on the quartz wafer.
(2) the coated surface face ion source by 6 clamping of sample to be tested on the indoor sample stage 5 of vacuum, on sample to be tested 6
7, two electrodes of 6 upper and lower surface of sample to be tested are connect with quartz crystal oscillator film thickness gauge 8；The adjusting of sample stage 5 is by two
Stepper motor driving, the levelness of 5 clamping face of sample stage is slightly adjusted, make film surface reflection light beam completely into
Detector 10, sample stage is cooling with water, can guarantee that the temperature of sample in test process is constant.
Vacuum chamber is vacuumized, the working vacuum degree 1 × 10 of ion source is reached-3 Pa。
(3) using the initial ellipse breath that believes one side only of ellipsometric parameter detection system measurement film sample, i.e. ellipsometric parameter ΨnAnd Δn,
This is the synthesis ellipsometric parameter of Initial Gradient film.
(4) ion source 7 is opened, film is performed etching with ar-ion beam, its thickness is made to reduce 10 nm.In etching process,
Using the thinned film thickness of the monitoring of quartz crystal oscillator film thickness gauge 8, the layer got rid of is denoted as LnLayer, corresponding film thickness are dn(it is in this example
10 nm).The ellipsometric parameter Ψ that rear film sample is thinned is measured using ellipsometric parameter detection systemn-1And Δn-1。
(5) it is again turned on ion source and film is performed etching with ar-ion beam thinned, its thickness is made to reduce 10 nm again.It carves
During erosion, using the thinned film thickness of quartz crystal oscillator film thickness gauge detection, the layer being thinned is denoted as Ln-1Layer, corresponding film thickness are
dn-1(being 10 nm in this example).Measure the ellipse breath Ψ that believes one side only that rear film sample is thinned again using ellipsometric parameter detection systemn-2With
Δn-2。
(6) step 5 is repeated, until film thickness is thinned to 10nm hereinafter, the layer is denoted as L1Layer, film thickness d1It is (remaining
8 nm).Using the ellipse breath Ψ that believes one side only of ellipsometric parameter detection system measurement sample1And Δ1。
(7) data process&analysis.According to Ψ1, Δ1And d1Numerical value, calculate L1The refractive index n of layer film1And delustring
Coefficient k1。
(8) in L1On the basis of layer optical constant and thickness are known, L is successively calculated2、L3Until LnLayer refractive index and disappear
Backscatter extinction logarithmic ratio draws refractive index, extinction coefficient with film thickness to obtain the optical constant distribution of film sample through-thickness
Change curve, realize the measurement of gradient-index film optical constant.
Claims (4)
1. the optical constant measuring device of a kind of gradient or graded index films, including vacuum system, ellipsometric parameter detection system
System, film thickness monitoring system and ion source (7), the vacuum system include vacuum chamber (4) and sample stage (5)；The film thickness monitoring
System includes quartz crystal oscillator film thickness gauge (8)；
The sample stage (5) is mounted on the top of vacuum chamber (4), and ion source (7) is mounted on vacuum chamber (4) bottom, and the two is opposite
And it puts, the ion beam delivery outlet face sample stage setting of ion source (7).
2. the optical constant measuring device of gradient according to claim 1 or graded index films, it is characterised in that: institute
The optical source wavelength stated is 300-900 nm；The test angle of light is 65 °.
3. the optical constant measuring device of gradient according to claim 1 or 2 or graded index films, feature exist
In: the ion energy of the ion source (7) is between 0-3000 eV.
4. the side that the optical constant measuring device of gradient according to claim 1 or graded index films measures
Method, it is characterised in that: the following steps are included:
The initial geometric thickness calibration of step 1, film sample: it is measured using geometric thickness of the contourgraph to film, obtains it
Original depth information determines thickness step-length thinned every time according to the test request of sample；
Step 2, by sample to be tested (6) clamping on the lower surface of sample stage (5), coated surface face ion source (7), to vacuum
Room (4) is vacuumized, and the working vacuum degree of ion source (7) is reached；
Step 3, the initial ellipse breath that believes one side only that film sample is measured using ellipsometric parameter detection system, i.e. ellipsometric parameter ΨnAnd Δn；
Step 4 opens ion source (7), the thickness of a thinned step-length is performed etching to film with ar-ion beam, using quartz-crystal
Shake the thinned film thickness of film thickness gauge (8) detection, and the thicknesses of layers etched away is denoted as dn, corresponding LnLayer；
The ellipsometric parameter Ψ that rear film sample is thinned is measured using ellipsometric parameter detection systemn-1And Δn-1；
Step 5 is again turned on ion source (7), film is performed etching using ar-ion beam it is thinned, while use quartz-crystal vibrating diaphragm
The thinned film thickness of thick instrument (8) detection, the thicknesses of layers etched away are denoted as dn-1(corresponding Ln-1Layer)；
Measure the ellipse breath Ψ that believes one side only that rear film sample is thinned again using ellipsometric parameter detection systemn-2And Δn-2；
Step 5 is repeated in step 6, until film thickness is thinned to thickness step-length hereinafter, corresponding L1The film thickness of layer is denoted as d1,
Using the ellipse breath Ψ that believes one side only of ellipsometric parameter detection system measurement sample1And Δ1；
Step 7, data process&analysis: according to Ψ1, Δ1And d1Numerical value, calculate L1The refractive index n of layer film1And extinction coefficient
k1；
Step 8 successively calculates L2、L3Until LnThe refractive index and extinction coefficient of layer, to obtain film sample through-thickness
Optical constant distribution, realizes the measurement of gradient-index film optical constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811149497.8A CN109001122B (en) | 2018-09-29 | 2018-09-29 | Optical constant measuring device and method for gradient or graded index film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811149497.8A CN109001122B (en) | 2018-09-29 | 2018-09-29 | Optical constant measuring device and method for gradient or graded index film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109001122A true CN109001122A (en) | 2018-12-14 |
| CN109001122B CN109001122B (en) | 2023-05-26 |
Family
ID=64590198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811149497.8A Active CN109001122B (en) | 2018-09-29 | 2018-09-29 | Optical constant measuring device and method for gradient or graded index film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109001122B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022105223A1 (en) * | 2020-11-18 | 2022-05-27 | 华侨大学 | Method for detecting thickness and optical properties of multilayer film |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4108329A1 (en) * | 1991-03-14 | 1992-09-24 | Plasmos Gmbh Prozesstechnik | Ellipsometric determn. of material parameters of successive layers of multilayer sample - by successive removal of layers, continuous ellipsometric measurement and computation of thickness, refractive index and absorption coefft. from test values |
| JPH05232298A (en) * | 1992-02-25 | 1993-09-07 | Nikon Corp | X-ray multilayer film reflector |
| US5354575A (en) * | 1993-04-16 | 1994-10-11 | University Of Maryland | Ellipsometric approach to anti-reflection coatings of semiconductor laser amplifiers |
| CN1144906A (en) * | 1995-09-06 | 1997-03-12 | 东南大学 | Imaging detecting method and its equipment for film thickness and refractive index |
| CN102830068A (en) * | 2012-08-03 | 2012-12-19 | 北京大学 | Multilayer film system luminous energy distribution measuring method |
| CN103743349A (en) * | 2013-12-30 | 2014-04-23 | 中国科学技术大学 | Method and device for measuring nano film |
| CN107917672A (en) * | 2018-01-05 | 2018-04-17 | 中国计量大学 | A kind of test method for being used to improve super thin metal films test sensitivity |
-
2018
- 2018-09-29 CN CN201811149497.8A patent/CN109001122B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4108329A1 (en) * | 1991-03-14 | 1992-09-24 | Plasmos Gmbh Prozesstechnik | Ellipsometric determn. of material parameters of successive layers of multilayer sample - by successive removal of layers, continuous ellipsometric measurement and computation of thickness, refractive index and absorption coefft. from test values |
| JPH05232298A (en) * | 1992-02-25 | 1993-09-07 | Nikon Corp | X-ray multilayer film reflector |
| US5354575A (en) * | 1993-04-16 | 1994-10-11 | University Of Maryland | Ellipsometric approach to anti-reflection coatings of semiconductor laser amplifiers |
| CN1144906A (en) * | 1995-09-06 | 1997-03-12 | 东南大学 | Imaging detecting method and its equipment for film thickness and refractive index |
| CN102830068A (en) * | 2012-08-03 | 2012-12-19 | 北京大学 | Multilayer film system luminous energy distribution measuring method |
| CN103743349A (en) * | 2013-12-30 | 2014-04-23 | 中国科学技术大学 | Method and device for measuring nano film |
| CN107917672A (en) * | 2018-01-05 | 2018-04-17 | 中国计量大学 | A kind of test method for being used to improve super thin metal films test sensitivity |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022105223A1 (en) * | 2020-11-18 | 2022-05-27 | 华侨大学 | Method for detecting thickness and optical properties of multilayer film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109001122B (en) | 2023-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208999296U (en) | A kind of thin-film optical constant measuring device | |
| CN107270822B (en) | The method for measuring porous membrane thickness and porosity | |
| JP3816533B2 (en) | Improved thickness monitoring | |
| US20030137664A1 (en) | Combination thermal wave and optical spectroscopy measurement systems | |
| CN109141259A (en) | A kind of optical constant of thin absorbing film and the measuring device and method of thickness | |
| CN103424839B (en) | Optical axis alignment method of compound wave plates | |
| Ahangar et al. | Optical properties and swelling of thin film perfluorinated sulfonic-acid ionomer | |
| CN109001122A (en) | The optical constant measuring device and method of gradient or graded index films | |
| JP6144685B2 (en) | Terahertz wave detecting element, manufacturing method thereof, and observation apparatus | |
| Granata et al. | Optical and Mechanical Properties of Ion-Beam-Sputtered Mg F 2 Thin Films for Gravitational-Wave Interferometers | |
| CN113340818A (en) | Self-consistent verification differential spectrometer and measurement method | |
| CN104458614B (en) | Accurate measuring method for extinction coefficient of low-absorption thin-film material | |
| CN111781148B (en) | Method, device, terminal and system for detecting longitudinal non-uniformity of film | |
| Stenzel et al. | A hybrid method for determination of optical thin film constants | |
| Atkinson et al. | Optical constants of thin film bismuth | |
| CN113358604B (en) | Oblique incidence type spectral reflection differential measurement device and method | |
| Zangooie et al. | Investigation of optical anisotropy of refractive-index-profiled porous silicon employing generalized ellipsometry | |
| CN114690088A (en) | Faraday optical rotation distribution measuring device and method capable of adjusting sensitivity | |
| Meyer et al. | Optical Effects in Metals: Application of a Least‐Squares Method to Measurements on Gold and Silver | |
| CN113483677A (en) | In-situ film property parameter real-time characterization method based on ellipsometer | |
| Sopinskii | Determination of optical constants of a biaxially anisotropic film by standard multiangle monochromatic ellipsometry | |
| CN106324740A (en) | Broad band absorbing film preparation method | |
| Kildemo et al. | Real time monitoring of the growth of transparent thin films by spectroscopic ellipsometry | |
| JPH07208937A (en) | Equipment and method for measuring film thickness and permittivity | |
| JPH047852A (en) | Film thickness measuring method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |