CN108996465A - A kind of Quantum Teleportation type high performance thin film perception material and preparation method thereof - Google Patents

A kind of Quantum Teleportation type high performance thin film perception material and preparation method thereof Download PDF

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Publication number
CN108996465A
CN108996465A CN201810922267.4A CN201810922267A CN108996465A CN 108996465 A CN108996465 A CN 108996465A CN 201810922267 A CN201810922267 A CN 201810922267A CN 108996465 A CN108996465 A CN 108996465A
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grams
film
nanoparticle
quantum
interdigital electrode
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周剑峰
赵明国
宋翔宇
韩民
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New Mstar Technology Ltd In Suzhou
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New Mstar Technology Ltd In Suzhou
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032Packages or encapsulation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349Creating layers of material on a substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388Etch mask forming
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means

Abstract

The present invention relates to new material technology fields; and disclose a kind of Quantum Teleportation type high performance thin film perception material, the raw material including following parts by weight proportion: 50-100 grams of 20-50 grams of interdigital electrode, 50-90 grams of monocrystalline silicon piece, 10-30 grams of SiO2 insulating layer, 20-40 grams of metallic film, 50-100 grams of Pd nanoparticle, 60-80 grams of PMMA protective layer, 50-100 grams of Cr nanoparticle, 50-100 grams of Ni nanoparticle, 50-100 grams of AI nanoparticle, 100-120 grams of PET plastic and Pd-Ni alloy nano particle.The preparation method of Quantum Teleportation type high performance thin film perception material, quantum conductance nano thin-film, which perceives material, has high sensitivity, sensitivity such as quantum conductance nanometer strain film perception material is dozens to hundreds of times high than conventional metal strain plate, the equivalent resistance of nano particle dot array is more than the Europe M, it is far longer than the resistance of metal foil, therefore low-power consumption (receive W to micro- W magnitude) may be implemented and be miniaturized, it is easy to be integrated on a chip with electrical measurement unit, with MEMS highly compatible.

Description

A kind of Quantum Teleportation type high performance thin film perception material and preparation method thereof
Technical field
The present invention relates to new material technology field, specially a kind of preparation of Quantum Teleportation type high performance thin film perception material Method.
Background technique
Pay attention to day by day of the film perception material just by research circle and industrial circle based on nano effect, nano material have Unique property can be used as the sensitive material haveing excellent performance, so that it is more more excellent than existing film perception material to develop performance Different film of new generation perceives material, currently, sensing technology is classified as what 21 century first developed in succession by the U.S., European Union and Japan Focus technology, according to the survey report of U.S. NanoMarkets-LC, next two decades Quantum Teleportation type high performance thin film perceives material Material will obtain lasting development, and market scale in 2012 has reached 17,200,000,000 dollars, and Quantum Teleportation type high performance thin film perceives material In entire film perception material market proportion up to 28% or more, China also has been started up Internet of Things plan and attempts to share material The bonus of such development in science and technology, the special circumstances based on China, Quantum Teleportation type high performance thin film perceives material will be by Internet of Things The popularization of net and realize the quick output value and increase.
In the application field of film perception material mainstream, such as medicine and health care, military affairs and Homeland Security, Industry Control and machine Device people, intelligent automobile, network communication and environmental monitoring etc., Quantum Teleportation type high performance thin film perception material all have extensively Wealthy development prospect and marginal period waits for, for example, film perception material technology is one of key core technologies of automotive electronics, at present Tens even up to a hundred perception materials are about mounted on one domestic normal domestic use car, limousine will use several sometimes Hundred perception materials then will thousands of Quantum Teleportation type high performance thin films perceive materials comprising number in developing intelligent automobile Material, the quantity and technical level of film perception material determine the height of automotive control system rank, it uses more, automobile Electronization, the degree of automation is also higher, and Global Auto film perception material market scale is 196.9 hundred million dollars within 2014, arrives The year two thousand twenty market scale is up to 30,900,000,000 dollars, and 2015-2020, annual compound growth rate 7.8%, China's automobile is thin at present Film perception material industry integral level is lower, and 90% automobile film perception material market is by continent, Bosch and Delphi etc. Overseas-funded enterprise's monopolization, reverses this situation as early as possible, improves the technical level of domestic automobile film perception material, is to construct China not Carry out one of the key of automobile competitiveness.
Currently, domestic more emerging electrochemistry class hydrogen film perception material and optical-fiber type hydrogen film perceive material, Since product entry threshold is higher, manufacturing enterprise is few, and the competition faced at home is less, and the film perception produced at present Material property is not high, so that factors such as sensitivity are not high, range extra money and response speed be not fast, causing can not be in high-end hydrogen Sensory field breaks external technical monopoly completely, so propose a kind of preparation of Quantum Teleportation type high performance thin film perception material Method solves the problems, such as above-mentioned propose.
Summary of the invention
(1) the technical issues of solving
In view of the deficiencies of the prior art, the present invention provides a kind of preparations of Quantum Teleportation type high performance thin film perception material Method has the advantages that performance is high, solve produce at present film perception material property it is not high so that sensitivity it is not high, The factors such as range extra money and response speed be not fast, external technology ridge can not be broken completely in high-end hydrogen sensory field by causing Disconnected problem.
(2) technical solution
To realize the above-mentioned high purpose of performance, the invention provides the following technical scheme: a kind of Quantum Teleportation type high performance thin film Material is perceived, the raw material including following parts by weight proportion: 20-50 grams of interdigital electrode, 50-90 grams of monocrystalline silicon piece, SiO2 insulation Layer 10-30 grams, 20-40 grams of metallic film, 50-100 grams of Pd nanoparticle, 60-80 grams of PMMA protective layer, Cr nanoparticle 50- 100 grams, 50-100 grams of Ni nanoparticle, 50-100 grams of AI nanoparticle, 100-120 grams of PET plastic and Pd-Ni alloy nano 50-100 grams of particle.
Preferably, Quantum Teleportation type high performance thin film perception material be divided into quantum conductance nano thin-film perception material and Quantum conductance mechanical film perceives material, and quantum conductance nano thin-film perceives electricity of the material by the interdigital electrode in special designing Vapor deposited metal nanoparticle dense arrangement dot matrix is constituted between extremely pair.
Preferably, the raw material including following parts by weight proportion: 20 grams of interdigital electrode, 50 grams of monocrystalline silicon piece, SiO2 insulation Layer 10 grams, 20 grams of metallic film, 50 grams of Pd nanoparticle, 60 grams of PMMA protective layer, 50 grams of Cr nanoparticle, Ni nanoparticle 50 grams, 50 grams of AI nanoparticle, 100 grams of PET plastic and 50 grams of Pd-Ni alloy nano particle.
Preferably, the raw material including following parts by weight proportion: 30 grams of interdigital electrode, 70 grams of monocrystalline silicon piece, SiO2 insulation Layer 15 grams, 30 grams of metallic film, 75 grams of Pd nanoparticle, 70 grams of PMMA protective layer, 75 grams of Cr nanoparticle, Ni nanoparticle 75 grams, 75 grams of AI nanoparticle, 110 grams of PET plastic and 75 grams of Pd-Ni alloy nano particle.
Preferably, the raw material including following parts by weight proportion: 50 grams of interdigital electrode, 90 grams of monocrystalline silicon piece, SiO2 insulation Layer 30 grams, 40 grams of metallic film, 100 grams of Pd nanoparticle, 80 grams of PMMA protective layer, 100 grams of Cr nanoparticle, Ni nanoparticle 100 grams of son, 100 grams of AI nanoparticle, 120 grams of PET plastic and 100 grams of Pd-Ni alloy nano particle.
Another technical problem to be solved by the present invention is that providing a kind of system of Quantum Teleportation type high performance thin film perception material Preparation Method, comprising the following steps:
1) processing of basal electrode: the substrate that quantum conductance hydrogen film perceives material is with interdigital electrode Monocrystalline silicon piece (100) substrate of (Interdigital Electrode abbreviation IDE), and silicon chip surface insulate with SiO2 Metallic film is covered on SiO2 insulating layer by layer, electrode by photoetching process, the structural schematic diagram of interdigital electrode such as Fig. 1 institute Show, the electrode of this structure can realize that largely there may be the adjacent nanoparticles of the low coverage of quantum tunneling in the size of very little Subchannel provides enough sensitivity for the conductance real-time monitoring of nanoparticulate thin films, is conducive to the integrated of system, can be effective Material cost is reduced, interdigital electrode is prepared using photoresist method of stripping technique, due to needing to use a full set of uv-exposure and vacuum Coating process, in the small-scale production stage, according to the structure cooperation processing of designed, designed, after yield reaches certain scale, Be contemplated that self-test photoetching production line, quantum conductance mechanical film perceive material substrate be PET plastic with interdigital electrode or One of rubber with interdigital electrode prepares metal interdigital electrode in film surface, and interdigital electrode passes through vacuum thermal evaporation Film preparation is plated, mask is set between evaporation source and substrate, which completes on self-built high vacuum coating unit;
2) deposition of populated nano-scale particle dot matrix: nano particle dot array is deposited on based on magnetic controlled plasma air accumulation It is carried out in cluster-beam deposition system, every cement line includes magnetic controlled plasma air accumulation Cluster Beam source, difference vacuum System, ultra high vacuum deposition room and all parts of real-time conductivity monitoring, using quartz oscillator thickness monitoring instrument come to nanometer The deposition rate of particle carries out in-situ monitoring, is received by the real-time monitoring to nano particle dot array conductance in the control of 1 nanometer scale Thus rice corpuscles interplanar distance regulates and controls the quantum tunneling in dot matrix in the adjacent gold nanochains of low coverage, realizes nano particle dot array Nonmetallic-Metal Phase Transition, and the nano particle dot array in transitional face in nonmetallic-Metal Phase Transition is obtained, this low coverage is adjacent The formation for connecing nano particle dot array is the key that obtain quantum conductance film perception material, perceives material for quantum conductance hydrogen film Material, uses diameter for one of the metal Pd nanoparticle of 8nm or Pd-Ni alloy nano particle, for quantum conductance mechanics Film perceives material, then uses diameter for nanoparticles such as Cr, Ni and Al of 10nm;
3) lead packages: perceiving material for hydrogen film, completes film perception material chip lead connection in clean room, Then chip package is perceived material for mechanical film, according to specific on pedestal by chip surface spin coating PMMA protective layer Function establishes corresponding lead and packaging technology.
(3) beneficial effect
Compared with prior art, the present invention provides a kind of preparation sides of Quantum Teleportation type high performance thin film perception material Method, have it is following the utility model has the advantages that
The Quantum Teleportation type high performance thin film perceives the preparation method of material, is currently to receive by cluster-beam deposition technology The mainstream technology of rice corpuscles component film gas phase preparation has quantitative with existing device fabrication compatibility height, technical process Controllable and high efficiency, low cost advantage, the foundation of material chip volume production equipment is perceived by film, realizes that film perceives material cores The large-scale production of piece, will further decrease the cost of film perception material, and Quantum Teleportation type high performance thin film perceives material tool There is the Integrated Trait of extremely low power consumption and height, the low power consumption network for being allowed to be particularly suitable for use as having the information processing function is thin Film perceives material, this is also that most of other film types perception materials are not easily achieved, and is made using nano material extremely clever Quick biological and chemical film perceives material, can early diagnose to cancer and cardiovascular disease etc., utilize carbon nanotube Ammonia, nitrogen oxide, hydrogen peroxide, hydrocarbon, volatilization are able to detect with the chemical film perception material of other nano-micro structures Property organic compound and other gases, compared with other analyzers with the same function, not only size wants small but also valence for it Lattice are also cheap, and traditional electricity film perception material is mainly also to realize to sense by the resistance variations of metal or semiconductor paillon Measurement, still, quantum conductance nano thin-film perceive material with it be it is entirely different, firstly, quantum conductance nano thin-film sense The transmission for knowing electronics in material is realized by quantum tunneling mechanism, this is perceived in material with traditional electricity film based on electricity The classical transmission process of son drift is entirely different, and quantum conductance is extremely sensitive to the variation of nanoparticle interplanar distance, can be easily The interplanar distance for measuring the atomic diameter order of magnitude changes caused conductance variation, this makes quantum conductance nano thin-film perception material tool There is high sensitivity, the sensitivity such as quantum conductance nanometer strain film perception material is several than conventional metal strain plate height Ten arrive hundreds of times, secondly, the equivalent resistance of nano particle dot array is far longer than the resistance of metal foil more than the Europe M, therefore can To realize low-power consumption (receive W to micro- W magnitude) and micromation, it is easy to be integrated on a chip with electrical measurement unit, with MEMS Highly compatible.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of interdigital electrode in the present invention.
Specific embodiment
Below in conjunction with the embodiment of the present invention and attached drawing, technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
Embodiment one:
A kind of Quantum Teleportation type high performance thin film perception material, the raw material including following parts by weight proportion: interdigital electrode 20 grams, 50 grams of monocrystalline silicon piece, 10 grams of SiO2 insulating layer, 20 grams of metallic film, 50 grams of Pd nanoparticle, 60 grams of PMMA protective layer, 50 grams of Cr nanoparticle, 50 grams of Ni nanoparticle, 50 grams of AI nanoparticle, 100 grams of PET plastic and Pd-Ni alloy nano particle 50 grams.
Quantum Teleportation type high performance thin film perception material is divided into quantum conductance nano thin-film perception material and quantum conductance power It learns film and perceives material, quantum conductance nano thin-film perception material passes through the gas phase between the electrode pair of the interdigital electrode of special designing Deposited metal nanoparticle dense arrangement dot matrix is constituted.
Another technical problem to be solved by the present invention is that providing a kind of system of Quantum Teleportation type high performance thin film perception material Preparation Method, comprising the following steps:
1) processing of basal electrode: the substrate that quantum conductance hydrogen film perceives material is with interdigital electrode Monocrystalline silicon piece (100) substrate of (Interdigital Electrode abbreviation IDE), and silicon chip surface insulate with SiO2 Metallic film is covered on SiO2 insulating layer by layer, electrode by photoetching process, the structural schematic diagram of interdigital electrode such as Fig. 1 institute Show, the electrode of this structure can realize that largely there may be the adjacent nanoparticles of the low coverage of quantum tunneling in the size of very little Subchannel provides enough sensitivity for the conductance real-time monitoring of nanoparticulate thin films, is conducive to the integrated of system, can be effective Material cost is reduced, interdigital electrode is prepared using photoresist method of stripping technique, due to needing to use a full set of uv-exposure and vacuum Coating process, in the small-scale production stage, according to the structure cooperation processing of designed, designed, after yield reaches certain scale, Be contemplated that self-test photoetching production line, quantum conductance mechanical film perceive material substrate be PET plastic with interdigital electrode or One of rubber with interdigital electrode prepares metal interdigital electrode in film surface, and interdigital electrode passes through vacuum thermal evaporation Film preparation is plated, mask is set between evaporation source and substrate, which completes on self-built high vacuum coating unit;
2) deposition of populated nano-scale particle dot matrix: nano particle dot array is deposited on based on magnetic controlled plasma air accumulation It is carried out in cluster-beam deposition system, every cement line includes magnetic controlled plasma air accumulation Cluster Beam source, difference vacuum System, ultra high vacuum deposition room and all parts of real-time conductivity monitoring, using quartz oscillator thickness monitoring instrument come to nanometer The deposition rate of particle carries out in-situ monitoring, is received by the real-time monitoring to nano particle dot array conductance in the control of 1 nanometer scale Thus rice corpuscles interplanar distance regulates and controls the quantum tunneling in dot matrix in the adjacent gold nanochains of low coverage, realizes nano particle dot array Nonmetallic-Metal Phase Transition, and the nano particle dot array in transitional face in nonmetallic-Metal Phase Transition is obtained, this low coverage is adjacent The formation for connecing nano particle dot array is the key that obtain quantum conductance film perception material, perceives material for quantum conductance hydrogen film Material, uses diameter for one of the metal Pd nanoparticle of 8nm or Pd-Ni alloy nano particle, for quantum conductance mechanics Film perceives material, then uses diameter for nanoparticles such as Cr, Ni and Al of 10nm;
3) lead packages: perceiving material for hydrogen film, completes film perception material chip lead connection in clean room, Then chip package is perceived material for mechanical film, according to specific on pedestal by chip surface spin coating PMMA protective layer Function establishes corresponding lead and packaging technology.
Embodiment two:
A kind of Quantum Teleportation type high performance thin film perception material, the raw material including following parts by weight proportion: interdigital electrode 30 grams, 70 grams of monocrystalline silicon piece, 15 grams of SiO2 insulating layer, 30 grams of metallic film, 75 grams of Pd nanoparticle, 70 grams of PMMA protective layer, 75 grams of Cr nanoparticle, 75 grams of Ni nanoparticle, 75 grams of AI nanoparticle, 110 grams of PET plastic and Pd-Ni alloy nano particle 75 grams.
Except it is above it is different in addition to, the present embodiment two it is other identical as above-described embodiment one, and the present embodiment two is same Has the advantages that such as above-described embodiment one, this is no longer going to repeat them.
Embodiment three:
A kind of Quantum Teleportation type high performance thin film perception material, the raw material including following parts by weight proportion: interdigital electrode 50 grams, 90 grams of monocrystalline silicon piece, 30 grams of SiO2 insulating layer, 40 grams of metallic film, 100 grams of Pd nanoparticle, 80 grams of PMMA protective layer, 100 grams of Cr nanoparticle, 100 grams of Ni nanoparticle, 100 grams of AI nanoparticle, 120 grams of PET plastic and Pd-Ni alloy nano 100 grams of particle.
Except it is above it is different in addition to, the present embodiment three it is other identical as above-described embodiment one, and the present embodiment three is same Has the advantages that such as above-described embodiment one, this is no longer going to repeat them.
The beneficial effects of the present invention are: being prepared by current nanoparticle component film gas phase by cluster-beam deposition technology Mainstream technology, have and existing device fabrication compatibility is high, quantitative controllable and high efficiency, low cost the advantage of technical process, The foundation of material chip volume production equipment is perceived by film, realizes the large-scale production of film perception material chip, it will be further The cost of film perception material is reduced, Quantum Teleportation type high performance thin film, which perceives material, has the integrated of extremely low power consumption and height Characteristic is allowed to be particularly suitable for use as having the low power consumption network film perception material of the information processing function, this is also most of What other film types perception materials were not easily achieved, extremely sensitive biological and chemical film is made using nano material and perceives material Material, can early diagnose cancer and cardiovascular disease etc., and the chemistry using carbon nanotube and other nano-micro structures is thin Film perception material is able to detect ammonia, nitrogen oxide, hydrogen peroxide, hydrocarbon, volatile organic compounds and other gases, Compared with other analyzers with the same function, not only size wants small but also price is also cheap for it, traditional electricity film sense Knowing material mainly is also to realize sensing measurement, still, quantum conductance nanometer by the resistance variations of metal or semiconductor paillon It is entirely different that film, which perceives material with it, firstly, the transmission of electronics is to pass through in quantum conductance nano thin-film perception material What quantum tunneling mechanism was realized, this is complete with the classical transmission process based on electronics drift in traditional electricity film perception material Difference, quantum conductance are extremely sensitive to the variation of nanoparticle interplanar distance, between the face that can measure the atomic diameter order of magnitude easily The variation of conductance caused by away from changing, this makes quantum conductance nano thin-film perception material have high sensitivity, such as quantum electricity The sensitivity that admittance rice strain film perceives material is dozens to hundreds of times high than conventional metal strain plate, secondly, nanoparticle The equivalent resistance of sub- dot matrix is far longer than the resistance of metal foil more than the Europe M, therefore low-power consumption may be implemented and (receive W to micro- W Magnitude) and micromation, it is easy to be integrated on a chip with electrical measurement unit, with MEMS highly compatible.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding And modification, the scope of the present invention is defined by the appended.

Claims (6)

1. a kind of Quantum Teleportation type high performance thin film perceives material, which is characterized in that the raw material including following parts by weight proportion: 20-50 grams of interdigital electrode, 50-90 grams of monocrystalline silicon piece, 10-30 grams of SiO2 insulating layer, 20-40 grams of metallic film, Pd nanoparticle 50-100 grams, 60-80 grams of PMMA protective layer, 50-100 grams of Cr nanoparticle, 50-100 grams of Ni nanoparticle, AI nanoparticle 50-100 grams of 50-100 grams, 100-120 grams of PET plastic and Pd-Ni alloy nano particle.
2. a kind of Quantum Teleportation type high performance thin film according to claim 1 perceives material, which is characterized in that the quantum Mode transmission high performance thin film perception material is divided into quantum conductance nano thin-film perception material and quantum conductance mechanical film perception material Material, quantum conductance nano thin-film perception material pass through the vapor deposited metal nanometer between the electrode pair of the interdigital electrode of special designing Particle dense arrangement dot matrix is constituted.
3. a kind of Quantum Teleportation type high performance thin film according to claim 1 perceives material, which is characterized in that including following The raw material of parts by weight proportion: 20 grams of interdigital electrode, 50 grams of monocrystalline silicon piece, 10 grams of SiO2 insulating layer, 20 grams of metallic film, Pd receive 50 grams of rice corpuscles, 60 grams of PMMA protective layer, 50 grams of Cr nanoparticle, 50 grams of Ni nanoparticle, 50 grams of AI nanoparticle, PET modeling 100 grams and 50 grams of Pd-Ni alloy nano particle of material.
4. a kind of Quantum Teleportation type high performance thin film according to claim 1 perceives material, which is characterized in that including following The raw material of parts by weight proportion: 30 grams of interdigital electrode, 70 grams of monocrystalline silicon piece, 15 grams of SiO2 insulating layer, 30 grams of metallic film, Pd receive 75 grams of rice corpuscles, 70 grams of PMMA protective layer, 75 grams of Cr nanoparticle, 75 grams of Ni nanoparticle, 75 grams of AI nanoparticle, PET modeling 110 grams and 75 grams of Pd-Ni alloy nano particle of material.
5. a kind of Quantum Teleportation type high performance thin film according to claim 1 perceives material, which is characterized in that including following The raw material of parts by weight proportion: 50 grams of interdigital electrode, 90 grams of monocrystalline silicon piece, 30 grams of SiO2 insulating layer, 40 grams of metallic film, Pd receive 100 grams of rice corpuscles, 80 grams of PMMA protective layer, 100 grams of Cr nanoparticle, 100 grams of Ni nanoparticle, 100 grams of AI nanoparticle, 120 grams and 100 grams of Pd-Ni alloy nano particle of PET plastic.
6. a kind of preparation method of Quantum Teleportation type high performance thin film perception material, which comprises the following steps:
1) processing of basal electrode: the substrate that quantum conductance hydrogen film perceives material is with interdigital electrode Monocrystalline silicon piece (100) substrate of (Interdigital Electrode abbreviation IDE), and silicon chip surface insulate with SiO2 Metallic film is covered on SiO2 insulating layer by layer, electrode by photoetching process, the structural schematic diagram of interdigital electrode such as Fig. 1 institute Show, the electrode of this structure can realize that largely there may be the adjacent nanoparticles of the low coverage of quantum tunneling in the size of very little Subchannel provides enough sensitivity for the conductance real-time monitoring of nanoparticulate thin films, is conducive to the integrated of system, can be effective Material cost is reduced, interdigital electrode is prepared using photoresist method of stripping technique, due to needing to use a full set of uv-exposure and vacuum Coating process, in the small-scale production stage, according to the structure cooperation processing of designed, designed, after yield reaches certain scale, Be contemplated that self-test photoetching production line, quantum conductance mechanical film perceive material substrate be PET plastic with interdigital electrode or One of rubber with interdigital electrode prepares metal interdigital electrode in film surface, and interdigital electrode passes through vacuum thermal evaporation Film preparation is plated, mask is set between evaporation source and substrate, which completes on self-built high vacuum coating unit;
2) deposition of populated nano-scale particle dot matrix: nano particle dot array is deposited on based on magnetic controlled plasma air accumulation cluster Carried out on line depositing system, every cement line include magnetic controlled plasma air accumulation Cluster Beam source, difference vacuum system, Ultra high vacuum deposition room and all parts of real-time conductivity monitoring, using quartz oscillator thickness monitoring instrument come to nanoparticle Deposition rate carries out in-situ monitoring, controls nanoparticle in 1 nanometer scale by the real-time monitoring to nano particle dot array conductance Thus interplanar distance regulates and controls the quantum tunneling in dot matrix in the adjacent gold nanochains of low coverage, realizes the non-gold of nano particle dot array Category-Metal Phase Transition, and the nano particle dot array in transitional face in nonmetallic-Metal Phase Transition is obtained, this low coverage adjoining is received The formation of rice corpuscles dot matrix is the key that obtain quantum conductance film perception material, perceives material for quantum conductance hydrogen film, Use diameter for one of the metal Pd nanoparticle of 8nm or Pd-Ni alloy nano particle, for quantum conductance mechanical film Material is perceived, then uses diameter for nanoparticles such as Cr, Ni and Al of 10nm;
3) lead packages: perceiving material for hydrogen film, film perception material chip lead connection is completed in clean room, in chip Then chip package is perceived material for mechanical film, according to specific function on pedestal by surface spin coating PMMA protective layer Establish corresponding lead and packaging technology.
CN201810922267.4A 2018-08-14 2018-08-14 A kind of Quantum Teleportation type high performance thin film perception material and preparation method thereof Pending CN108996465A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101482528A (en) * 2009-01-23 2009-07-15 南京大学 Production method for integrated concentrated nano-particle monolayer film hydrogen sensor
US20130017441A1 (en) * 2011-06-17 2013-01-17 Sion Power Corporation Plating technique for electrode
CN102914395A (en) * 2012-11-06 2013-02-06 苏州新锐博纳米科技有限公司 Nano stress sensor based on metal nano gap and preparation method thereof
CN104502421A (en) * 2014-12-16 2015-04-08 电子科技大学 Room-temperature P-N-P heterostructure hydrogen sensor and preparation method thereof
CN106536403A (en) * 2014-05-28 2017-03-22 3M创新有限公司 MEMS devices on flexible substrate
CN107941409A (en) * 2017-10-19 2018-04-20 南京大学 A kind of resistance-type gas pressure gauge based on nano particle dot array

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101482528A (en) * 2009-01-23 2009-07-15 南京大学 Production method for integrated concentrated nano-particle monolayer film hydrogen sensor
US20130017441A1 (en) * 2011-06-17 2013-01-17 Sion Power Corporation Plating technique for electrode
CN102914395A (en) * 2012-11-06 2013-02-06 苏州新锐博纳米科技有限公司 Nano stress sensor based on metal nano gap and preparation method thereof
CN106536403A (en) * 2014-05-28 2017-03-22 3M创新有限公司 MEMS devices on flexible substrate
CN104502421A (en) * 2014-12-16 2015-04-08 电子科技大学 Room-temperature P-N-P heterostructure hydrogen sensor and preparation method thereof
CN107941409A (en) * 2017-10-19 2018-04-20 南京大学 A kind of resistance-type gas pressure gauge based on nano particle dot array

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