CN108994525A - Semiconductor ultra-pure titanium sputtering target end face annular knurl technique - Google Patents
Semiconductor ultra-pure titanium sputtering target end face annular knurl technique Download PDFInfo
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- CN108994525A CN108994525A CN201810809001.9A CN201810809001A CN108994525A CN 108994525 A CN108994525 A CN 108994525A CN 201810809001 A CN201810809001 A CN 201810809001A CN 108994525 A CN108994525 A CN 108994525A
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- annular knurl
- target
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P9/00—Treating or finishing surfaces mechanically, with or without calibrating, primarily to resist wear or impact, e.g. smoothing or roughening turbine blades or bearings; Features of such surfaces not otherwise provided for, their treatment being unspecified
- B23P9/02—Treating or finishing by applying pressure, e.g. knurling
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Abstract
The present invention provides a kind of semiconductor ultra-pure titanium sputtering target end face annular knurl techniques, are related to the semiconductor technical field of ultra-pure titanium sputtering target, including to target end face annular knurl；To target side annular knurl；To the junction angle the R annular knurl of target end face and side.The purpose of the present invention is to provide a kind of semiconductor ultra-pure titanium sputtering target end face annular knurl techniques, make dedicated annular knurl cutter head and knife handle, by target clamping on lathe, by the operating of process equipment and cutter to the lower pressure of target, region is required to realize annular knurl line in target, increase target material surface adhesive force to reach, the excess ions for preventing target from accumulating in sputtering process fall off, and cause to damage wafer.
Description
Technical field
The present invention relates to the ultra-pure titanium sputtering target technical field of semiconductor, more particularly, to a kind of semiconductor with ultra-pure
Titanium sputtering target end face annular knurl technique.
Background technique
Target is in sputtering process, and the edge Blank and side can generate atom reverse sputtering, and it is attached that existing target receives ion
Surface roughness be unable to satisfy requirement, the ion of accumulation is easy to fall off.
The information disclosed in the background technology section is intended only to deepen understanding of the general background technology to the present invention, and
It is not construed as recognizing or implying in any form that the information constitutes the prior art known to those skilled in the art.
Summary of the invention
The purpose of the present invention is to provide a kind of semiconductor ultra-pure titanium sputtering target end face annular knurl techniques, make dedicated
Annular knurl cutter head and knife handle, by target clamping on lathe, by the operating of process equipment and cutter to the lower pressure of target, in target
Material requires region to realize annular knurl line, increases target material surface adhesive force to reach, prevents target from accumulating in sputtering process more
Remaining ion falls off, and causes to damage wafer.
To achieve the above object, the present invention the following technical schemes are provided:
The present invention provides a kind of semiconductor ultra-pure titanium sputtering target end face annular knurl technique, comprising:
To target end face annular knurl；
To target side annular knurl；
To the junction angle the R annular knurl of the target end face and side.
Further, described to include: to target end face annular knurl
To knife: the Continuous pressing device for stereo-pattern on the target scratches the target material surface to prevent cutter；
Feed: annular knurl width of the knurled wheel in the target end face is 12.5mm-13.5mm；
Annular knurl: lathe revolving speed 22r/min, amount of pressure drop range are 0.4mm-0.5mm；
Decorative pattern and the confirmation of knurled region size after annular knurl.
Further, described to include: to target side annular knurl
Cutting-tool angle is tuned into the angle being consistent with the target flank angle, and knurled wheel and the target side are flat
Row；
To knife: the Continuous pressing device for stereo-pattern on the target scratches the target material surface to prevent the cutter；
Feed: annular knurl width of the knurled wheel in the target side is 2.5mm-3.5mm；
Annular knurl: lathe revolving speed 22r/min, amount of pressure drop range are 0.4mm-0.5mm.
It is further, described that cutting-tool angle is tuned into the angle being consistent with the target flank angle includes: the cutter
Axis and target side institute it is angled be 30 °.
Further, the junction angle the R annular knurl to the target end face and side includes:
Knurled wheel rolls R corner piece line according to the angle that cutter is set.
Further, the angle in angle rolling R corner piece line that the knurled wheel is set according to cutter is 45 °.
Further, the angle in angle rolling R corner piece line that the knurled wheel is set according to cutter is 70 °.
Further, the semiconductor ultra-pure titanium sputtering target end face annular knurl technique further include:
Installs fixture posts adhesive tape on the fixture to prevent the fixture and scratches the target；
Knurling tool is installed, annular knurl wheel surface is parallel with the target side；
By target installation and the fixture, the degree of developing of the target Yu the fixture is confirmed, and confirm the target
Flatness after material installation.
Further, the semiconductor ultra-pure titanium sputtering target end face annular knurl technique further include:
Polishing, detection；
Check whether decorative pattern size is qualified；
Check whether decorative pattern is smooth, impulse- free robustness；
Check whether the linking of the angle R is qualified.
Further, the polishing is polished using No. 600 sand paper, and polishes revolving speed 280r/min.
Semiconductor provided by the invention ultra-pure titanium sputtering target end face annular knurl technique has following
The utility model has the advantages that
The present invention provides a kind of semiconductor ultra-pure titanium sputtering target end face annular knurl technique, comprising: to target end face annular knurl；
To target side annular knurl；To the junction angle the R annular knurl of target end face and side.
For target in sputtering process, the edge Blank and side can generate atom reverse sputtering, partly be led using provided by the invention
Body ultra-pure titanium sputtering target end face annular knurl technique, in reverse sputtering region annular knurl, i.e., to target end face annular knurl；Target side is rolled
Flower；To the junction angle the R annular knurl of target end face and side.
A kind of semiconductor provided by the invention ultra-pure titanium sputtering target end face annular knurl technique, make dedicated knurled wheel and
Cutter, by the operating and cutter of process equipment to the lower pressure of target, requires region in target by target clamping on lathe
It realizes annular knurl line, increases target material surface adhesive force to reach, the excess ions for preventing target from accumulating in sputtering process fall off,
Cause to damage wafer.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is semiconductor provided in an embodiment of the present invention end face annular knurl in the annular knurl technique of ultra-pure titanium sputtering target end face
Structural schematic diagram；
Fig. 2 is semiconductor provided in an embodiment of the present invention side annular knurl in the annular knurl technique of ultra-pure titanium sputtering target end face
Structural schematic diagram；
Fig. 3 is the semiconductor provided in an embodiment of the present invention angle R annular knurl in the annular knurl technique of ultra-pure titanium sputtering target end face
Structural schematic diagram one；
Fig. 4 is the semiconductor provided in an embodiment of the present invention angle R annular knurl in the annular knurl technique of ultra-pure titanium sputtering target end face
Structural schematic diagram two.
Icon: 1- target；2- knurling tool；The end face 11-；The side 12-；The angle 13-R；21- knurled wheel；22- cutter.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
Fig. 1, Fig. 2, Fig. 3 and Fig. 4 are please referred to, below in conjunction with attached drawing to semiconductor superelevation provided in an embodiment of the present invention
Pure titanium sputtering target end face annular knurl technique elaborates.
The embodiment provides a kind of semiconductor ultra-pure titanium sputtering target end face annular knurl techniques, comprising:
To 1 end face of target, 11 annular knurl；
To 1 side of target, 12 annular knurl；
To 13 annular knurl of the junction angle R of 1 end face 11 of target and side 12.
Target 1 is in sputtering process, and the edge Blank and side 12 can generate atom reverse sputtering, and use is provided by the invention
Semiconductor ultra-pure titanium sputtering target end face annular knurl technique, in reverse sputtering region annular knurl, i.e., to 1 end face of target, 11 annular knurl；To target
1 side of material, 12 annular knurl；To 13 annular knurl of the junction angle R of 1 end face 11 of target and side 12.
A kind of semiconductor provided by the invention ultra-pure titanium sputtering target end face annular knurl technique, makes dedicated knurled wheel 21
And cutter 22, by 1 clamping of target on lathe, by the operating of process equipment and cutter 22 to the lower pressure of target 1, in target
1 requires region to realize annular knurl line, increases by 1 surface adhesion force of target to reach, prevents target 1 from accumulating in sputtering process more
Remaining ion falls off, and causes to damage wafer.
In the optional scheme of the present embodiment, further, include: to 1 end face of target, 11 annular knurl
To knife: the Continuous pressing device for stereo-pattern on target 1 scratches 1 surface of target to prevent cutter 22；
Feed: annular knurl width of the knurled wheel 21 in 1 end face 11 of target is 12.5mm-13.5mm；
Annular knurl: lathe revolving speed 22r/min, amount of pressure drop range are 0.4mm-0.5mm；
Decorative pattern and the confirmation of knurled region size after annular knurl.
In at least one embodiment, annular knurl width of the knurled wheel 21 in 1 end face 11 of target is 12.5mm-13.5mm, example
Such as can with but be not limited only to for 12.5mm, 12.6mm, 12.7mm, 12.8mm, 12.9mm, 13.0mm, 13.1mm, 13.2mm,
13.3mm, 13.4mm or 13.5mm.Amount of pressure drop range be 0.4mm-0.5mm, such as can with but be not limited only to for 0.4mm,
0.45mm or 0.5mm.
In the optional scheme of the present embodiment, further, include: to 1 side of target, 12 annular knurl
22 angle of cutter is tuned into the angle being consistent with 1 side of target, 12 angle, and knurled wheel 21 and 1 side 12 of target are flat
Row；
To knife: the Continuous pressing device for stereo-pattern on target 1 scratches 1 surface of target to prevent cutter 22；
Feed: annular knurl width of the knurled wheel 21 in 1 side 12 of target is 2.5mm-3.5mm；
Annular knurl: lathe revolving speed 22r/min, amount of pressure drop range are 0.4mm-0.5mm.
In at least one embodiment, annular knurl width of the knurled wheel 21 in 1 end face 11 of target is 12.5mm-13.5mm, example
Such as can with but be not limited only to as 2.5mm, 2.6mm, 2.7mm, 2.8mm, 2.9mm, 3.0mm, 3.1mm, 3.2mm, 3.3mm, 3.4mm
Or 3.5mm.Amount of pressure drop range be 0.4mm-0.5mm, such as can with but be not limited only to as 0.4mm, 0.45mm or 0.5mm.
In the optional scheme of the present embodiment, further, 22 angle of cutter is tuned into and is consistent with 1 side of target, 12 angle
Angle include: cutter 22 axis and the institute of 1 side of target 12 it is angled be 30 °.
In the optional scheme of the present embodiment, further, the junction angle R 13 of 1 end face 11 of target and side 12 is rolled
Flower includes:
Knurled wheel 21 rolls 13 decorative pattern of the angle R according to the angle that cutter 22 is set.
In the optional scheme of the present embodiment, further, knurled wheel 21 rolls the angle R 13 according to the angle that cutter 22 is set
Angle in decorative pattern is 45 °.
In the optional scheme of the present embodiment, further, knurled wheel 21 rolls the angle R 13 according to the angle that cutter 22 is set
Angle in decorative pattern is 70 °.
In the optional scheme of the present embodiment, further, semiconductor with ultra-pure titanium sputtering target end face annular knurl technique also
Include:
Installs fixture posts adhesive tape on fixture to prevent fixture and scratches target 1；
Knurling tool 2 is installed to have, 21 surface of knurled wheel is parallel with 1 side 12 of target；
Target 1 is installed and fixture, confirms the degree of developing of target 1 and fixture, and confirms the flatness after the installation of target 1.
In the optional scheme of the present embodiment, further, semiconductor with ultra-pure titanium sputtering target end face annular knurl technique also
Include:
Polishing, detection；
Check whether decorative pattern size is qualified；
Check whether decorative pattern is smooth, impulse- free robustness；
Check whether the linking of the angle R 13 is qualified.
In the optional scheme of the present embodiment, further, polishing is polished using No. 600 sand paper, and polishes revolving speed 280r/
min。
In at least one embodiment, semiconductor includes: with ultra-pure titanium sputtering target end face annular knurl technique
1. preparation
(1) fixture is installed.Fixture is sticked into Teflon adhesive tape, to prevent fixture from scratching target 1.Teflon tape-stripping
When pay attention to lateral stickup, and adhesive tape overlapping phenomenon do not occur, otherwise influence whether the flatness of 1 clamping of target.
(2) tool of knurling tool 2 installation.When installation on the basis of 1 surface of target, 21 surface of knurled wheel has to be parallel to target
1 surface.21 model of knurled wheel: 11 knurled wheel 21 of the end face 50TPI.
(3) target 1 is installed.Target 1 pays attention to the degree of developing with fixture when installing, target 1 is clamped after confirmation, then uses percentage
Table confirms flatness after the installation of target 1.It should be noted that pointer head has to be wrapped with Teflon adhesive tape, prevent from scratching target
Material 1 confirms flatness error within 0.05mm.
2. 11 annular knurl of end face
(1) to knife: knurled wheel 21 is zeroed with the maximum outer circle of target 1, and digital display meter X-axis inputs the maximum excircle dimension of target 1.It needs
It is noted that when cutter 22 contacts target 1, have to post Teflon adhesive tape and properly protect, target 1 is scratched when avoiding to knife
Surface.
(2) feed: X-axis is moved to the minimum diameter of annular knurl range from the maximum excircle dimension of target 1 inwards.
(3) with calliper to measure examine knurled wheel 21 enter Ti composition surface whether 13mm wide.It should be noted that slide calliper rule are surveyed
It is careful not to draw to 1 surface of target when amount, annular knurl width is 13mm, positive and negative 0.5mm tolerance.
(4) start annular knurl, between confirmation lathe revolving speed 22r/min, amount of pressure drop 0.4mm-0.5mm.
(5) decorative pattern and the confirmation of knurled region size after annular knurl.
3. 12 annular knurl of side
(1) 2 angle of knurling tool is tuned into the angle (30 °) being consistent with 1 side of target, 12 angle, removes contact target with cutter 22
1 side 12 of material, confirmation are parallel.It should be noted that knurled wheel 21 and 12 depth of parallelism of side of target 1 are extremely important, if not
It is deep to will appear one side decorative pattern in parallel, the shallow phenomenon of one side decorative pattern.
(2) to knife: 21 edge of knurled wheel is zero point with 1 end face 11 of target.It should be noted that when to knife, centainly by target
Teflon adhesive tape is sticked on material 1, carries out the protection of target 1.
(3) X-axis exits target 1Blank outer circle zero-bit, and Z axis prepares annular knurl into 3mm.
(4) knurled wheel 21 is examined to enter whether Ti composition side 12 is 3mm wide with calliper to measure.
(5) start annular knurl, lathe revolving speed 22r/min, X-axis amount of pressure drop is in 0.4mm-0.5mm or so.
13 annular knurl of the angle 4.R
(1) 13 decorative pattern of the angle angle roller R that knurled wheel 21 is set according to knife rest.It should be noted that 45 ° of one knife, 70 ° one
Knife.
5. polishing, detection
(1) annular knurl is carried out using 11 knurled wheel 21 of the end face 50TPI；Multi-angle carries out 11 annular knurl of end face, is connected each face
It is smooth；Lathe revolving speed 22r/min when annular knurl, amount of pressure drop 0.4mm-0.5mm；Surface detail is uniform；Revolving speed 280r/min is polished, is made
It is polished with No. 600 sand paper.
(2) check whether decorative pattern size is qualified.11 decorative pattern width 13mm of end face, 12 decorative pattern width 3mm of side.It needs to illustrate
, the 11 positive and negative 0.5mm tolerance of decorative pattern standard size 13mm of end face；The 12 positive and negative 0.5mm tolerance of decorative pattern standard size 3mm of side.
(3) check whether decorative pattern is smooth, impulse- free robustness.Whether the linking of the angle R 13 is qualified.It should be noted that decorative pattern polishing is
It is no uniform, confirm decorative pattern without flange and burr phenomena.The angle R 13 is connected without noticeable steps.
The present invention passes through process equipment by 1 clamping of target on lathe by making dedicated knurled wheel 21 and cutter 22
Operating and cutter 22 to the lower pressure of target 1, require region to realize annular knurl line in target 1, splashed to reach and increase target 1
To the adhesive force of produced excess ions during penetrating, the excess ions for preventing target 1 from accumulating in sputtering process fall off, cause
Damage the effect of wafer.
Semiconductor of the invention is illustrated with ultra-pure titanium sputtering target end face annular knurl technique above, still, this hair
It is bright to be not limited to above-mentioned specific embodiment, without departing from the scope of the claims, various deformations can be carried out
Or change.The invention includes various changes and modifications within the scope of the claims.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe is described in detail invention referring to foregoing embodiments, those skilled in the art should understand that: it is still
It is possible to modify the technical solutions described in the foregoing embodiments, or some or all of the technical features is carried out
Equivalent replacement；And these are modified or replaceed, it does not separate the essence of the corresponding technical solution various embodiments of the present invention technical side
The range of case.
Claims (10)
1. a kind of semiconductor ultra-pure titanium sputtering target end face annular knurl technique characterized by comprising
To target end face annular knurl；
To target side annular knurl；
To the junction angle the R annular knurl of the target end face and side.
2. semiconductor according to claim 1 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that described right
Target end face annular knurl includes:
To knife: the Continuous pressing device for stereo-pattern on the target scratches the target material surface to prevent cutter；
Feed: annular knurl width of the knurled wheel in the target end face is 12.5mm-13.5mm；
Annular knurl: lathe revolving speed 22r/min, amount of pressure drop range are 0.4mm-0.5mm；
Decorative pattern and the confirmation of knurled region size after annular knurl.
3. semiconductor according to claim 1 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that described right
Target side annular knurl includes:
Cutting-tool angle is tuned into the angle being consistent with the target flank angle, and knurled wheel is parallel with the target side；
To knife: the Continuous pressing device for stereo-pattern on the target scratches the target material surface to prevent the cutter；
Feed: annular knurl width of the knurled wheel in the target side is 2.5mm-3.5mm；
Annular knurl: lathe revolving speed 22r/min, amount of pressure drop range are 0.4mm-0.5mm.
4. semiconductor according to claim 3 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that described to incite somebody to action
Cutting-tool angle is tuned into that the angle being consistent with the target flank angle includes: the axis of the cutter and the target side is in
Angle is 30 °.
5. semiconductor according to claim 1 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that described right
The junction angle the R annular knurl of the target end face and side includes:
Knurled wheel rolls R corner piece line according to the angle that cutter is set.
6. semiconductor according to claim 5 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that the rolling
The angle in angle rolling R corner piece line that floral whorl sets according to cutter is 45 °.
7. semiconductor according to claim 5 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that the rolling
The angle in angle rolling R corner piece line that floral whorl sets according to cutter is 70 °.
8. semiconductor according to claim 1 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that described half
Conductor ultra-pure titanium sputtering target end face annular knurl technique further include:
Installs fixture posts adhesive tape on the fixture to prevent the fixture and scratches the target；
Knurling tool is installed, annular knurl wheel surface is parallel with the target side；
By target installation and the fixture, the degree of developing of the target Yu the fixture is confirmed, and confirm the target peace
Flatness after dress.
9. semiconductor according to claim 1 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that described half
Conductor ultra-pure titanium sputtering target end face annular knurl technique further include:
Polishing, detection；
Check whether decorative pattern size is qualified；
Check whether decorative pattern is smooth, impulse- free robustness；
Check whether the linking of the angle R is qualified.
10. semiconductor according to claim 9 ultra-pure titanium sputtering target end face annular knurl technique, which is characterized in that described
Polishing is polished using No. 600 sand paper, and polishes revolving speed 280r/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810809001.9A CN108994525B (en) | 2018-07-20 | 2018-07-20 | Knurling process for end face of ultrahigh-purity titanium sputtering target for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810809001.9A CN108994525B (en) | 2018-07-20 | 2018-07-20 | Knurling process for end face of ultrahigh-purity titanium sputtering target for semiconductor |
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| Publication Number | Publication Date |
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| CN108994525A true CN108994525A (en) | 2018-12-14 |
| CN108994525B CN108994525B (en) | 2020-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810809001.9A Active CN108994525B (en) | 2018-07-20 | 2018-07-20 | Knurling process for end face of ultrahigh-purity titanium sputtering target for semiconductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112318063A (en) * | 2020-09-08 | 2021-02-05 | 有研亿金新材料有限公司 | Method for processing surface patterns of sputtering ring accessory |
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| JPWO2011122317A1 (en) * | 2010-03-29 | 2013-07-08 | Jx日鉱日石金属株式会社 | Tantalum coil for sputtering and processing method of the coil |
| CN203474887U (en) * | 2013-09-30 | 2014-03-12 | 宁波江丰电子材料有限公司 | Target material assembly |
| CN107717462A (en) * | 2016-08-11 | 2018-02-23 | 宁波江丰电子材料股份有限公司 | Annular element fracture knurling device and annular element fracture rose work method |
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| TW446991B (en) * | 1997-09-05 | 2001-07-21 | Applied Materials Inc | Embossed semiconductor fabrication parts |
| CN102791903A (en) * | 2010-03-29 | 2012-11-21 | 吉坤日矿日石金属株式会社 | Tantalum coil for sputtering and method for processing the coil |
| JPWO2011122317A1 (en) * | 2010-03-29 | 2013-07-08 | Jx日鉱日石金属株式会社 | Tantalum coil for sputtering and processing method of the coil |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112318063A (en) * | 2020-09-08 | 2021-02-05 | 有研亿金新材料有限公司 | Method for processing surface patterns of sputtering ring accessory |
| CN112318063B (en) * | 2020-09-08 | 2022-01-18 | 有研亿金新材料有限公司 | Method for processing surface patterns of sputtering ring accessory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108994525B (en) | 2020-08-11 |
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