CN108988293B - Over-temperature protection circuit and data line with same - Google Patents
Over-temperature protection circuit and data line with same Download PDFInfo
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- CN108988293B CN108988293B CN201810847280.8A CN201810847280A CN108988293B CN 108988293 B CN108988293 B CN 108988293B CN 201810847280 A CN201810847280 A CN 201810847280A CN 108988293 B CN108988293 B CN 108988293B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/042—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using temperature dependent resistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/044—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a semiconductor device to sense the temperature
Abstract
An over-temperature protection circuit and a data line are provided, wherein a temperature sensing module outputs a sensing voltage according to an ambient temperature, a first path end of a first switch element receives an input voltage, a first control end of the first switch element receives the sensing voltage, a second path end of the first switch element is connected with a common end of a first voltage dividing resistor and a second voltage dividing resistor, a third path end of a second switch element receives the input voltage, a second control end of the second switch element is connected with a second path end of the first switch element, when the ambient temperature of the temperature sensing module is lower than the sensing temperature of the temperature sensing module, the sensing voltage output by the temperature sensing module turns off the first switch element to control the second switch element to be turned on, when the ambient temperature of the temperature sensing module is higher than or equal to the sensing temperature of the temperature sensing module, the sensing voltage output by the temperature sensing module turns on the first switch element to control the second switch element to be turned off, thereby opening the circuit to prevent over-temperature burn-out of the device.
Description
Technical Field
The invention relates to the technical field of data lines, in particular to an over-temperature protection circuit and a data line with the same.
Background
Universal Serial Bus (USB) is a Serial Bus standard for connecting computer systems and external devices, and is also a technical specification of input/output interfaces, and is widely used in information communication products such as personal computers and mobile devices, and is extended to other related fields such as video equipment, digital televisions (set-top boxes), game machines, and the like. The USB Type-C interface is a gradually popularized USB interface, along with the popularization of the USB Type-C interface, more equipment needs to support a USB Type-C protocol, the USB Type-C interface is usually located at the bottom of a smart phone and is used for charging, data transmission and other purposes most of the time, the USB Type-C interface has the biggest characteristic of supporting the function of 'forward and reverse plug' which can be plugged from the front side and the reverse side, and meanwhile, a USB data line used in cooperation with the USB Type-C interface is thinner and lighter.
At present, a Positive Temperature Coefficient thermistor (PTC) is only added to a VBUS access at an output end of a data line of a USB Type-C interface, and although the cost of a cable is low only by adopting the PTC, the protection Temperature of the PTC is at least more than 100 ℃ for 1-2 minutes, so that the PTC cannot timely and effectively avoid the Type-C interface from being burnt due to overhigh Temperature, and troubles are brought to a user.
Disclosure of Invention
The invention aims to provide an over-temperature protection circuit which can realize a reliable over-temperature protection function.
The invention provides an over-temperature protection circuit, which comprises a temperature sensing module, a first switch element, a second switch element, a first divider resistor and a second divider resistor, wherein the temperature sensing module is used for sensing the temperature of a power supply;
the temperature sensing module is used for outputting sensing voltage according to the ambient temperature;
the first switch element comprises a first path end, a second path end and a first control end, the first path end receives input voltage, the first control end receives the induction voltage, and the second path end is connected with a common end of the first divider resistor and the second divider resistor;
the first voltage-dividing resistor and the second voltage-dividing resistor are sequentially connected in series between the first path end and a grounding wire;
the second switch element comprises a third path end, a fourth path end and a second control end, the third path end receives the input voltage, the second control end is connected with the second path end of the first switch element, and the fourth path end is used for outputting voltage;
when the ambient temperature of the temperature sensing module is lower than the sensing temperature of the temperature sensing module, the sensing voltage output by the temperature sensing module switches off the first switch element to control the second switch element to be switched on, and when the ambient temperature of the temperature sensing module is higher than or equal to the sensing temperature of the temperature sensing module, the sensing voltage output by the temperature sensing module switches on the first switch element to control the second switch element to be switched off.
Further, the first switch element is an N-channel MOSFET field effect transistor, and the second switch element is a P-channel MOSFET field effect transistor.
Further, the temperature sensing module includes a third voltage dividing resistor and a thermistor connected in series between the first path end of the first switching element and a ground line, and a common end of the third voltage dividing resistor and the thermistor is used for outputting the sensing voltage.
Further, the thermistor is a positive temperature coefficient thermistor, and the third voltage dividing resistor and the positive temperature coefficient thermistor are sequentially connected in series between the first path end of the first switching element and the ground line.
Further, the resistance value relationships among the first voltage-dividing resistor, the second voltage-dividing resistor, the positive temperature coefficient thermistor and the third voltage-dividing resistor are as follows:
in the formula, R1Represents a resistance value, R, of the first divider resistor2Represents a resistance value, R, of the second divider resistor3Represents a resistance value, R, of the third voltage dividing resistorPTCAnd the resistance value of the positive temperature coefficient thermistor is shown when the positive temperature coefficient thermistor is lower than the sensing temperature.
Further, the thermistor is a negative temperature coefficient thermistor, and the negative temperature coefficient thermistor and the third voltage dividing resistor are sequentially connected in series between the first path end of the first switching element and the ground line.
Furthermore, the resistance value relationships among the first voltage-dividing resistor, the second voltage-dividing resistor, the negative temperature coefficient thermistor and the third voltage-dividing resistor are as follows:
in the formula, R1Represents a resistance value, R, of the first divider resistor2Represents a resistance value, R, of the second divider resistor3Represents a resistance value, R, of the third voltage dividing resistorNTCAnd the resistance value of the negative temperature coefficient thermistor is expressed when the negative temperature coefficient thermistor is lower than the sensing temperature.
Furthermore, the induction temperature of the thermistor is 70-80 ℃, and the impedance response time is less than 1 s.
Further, the voltage stabilizing circuit further comprises a voltage stabilizing capacitor, and the voltage stabilizing capacitor is connected between the first control end of the first switching element and the grounding wire.
The invention also provides a data line which comprises the over-temperature protection circuit.
In the embodiment of the invention, the over-temperature protection circuit comprises the temperature sensing module, the first switch element, the second switch element, the first divider resistor and the second divider resistor, and the on-off of the first switch element and the second switch element can be effectively controlled through the temperature sensing module, the first divider resistor and the second divider resistor, so that the over-temperature protection function is realized, and the structure is simple and reliable. In addition, the second control end of the second switch element and the common end of the first voltage-dividing resistor and the second voltage-dividing resistor are connected, so that the second switch element can be kept in stable conduction without being influenced by the fluctuation of the sensing voltage output by the temperature sensing module when the ambient temperature is normal, and the stability of the circuit is ensured.
Drawings
Fig. 1 is a schematic circuit structure diagram of an over-temperature protection circuit according to a first embodiment of the present invention.
Fig. 2 is a schematic circuit structure diagram of an over-temperature protection circuit according to a second embodiment of the present invention.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description of the embodiments, structures, features and effects of the present invention will be made with reference to the accompanying drawings and preferred embodiments.
Fig. 1 is a schematic circuit structure diagram of an over-temperature protection circuit according to a first embodiment of the present invention. As shown in fig. 1, the over-temperature protection circuit 10 of the present embodiment may include a temperature sensing module 11, a first switching element Q1, a second switching element Q2, a first voltage dividing resistor R1, a second voltage dividing resistor R2, and a voltage stabilizing capacitor C1.
The temperature sensing module 11 is used for outputting a sensing voltage according to the ambient temperature.
The first switch element Q1 includes a first path terminal, a second path terminal and a first control terminal, the first path terminal of the first switch element Q1 receives the input voltage Vin, the first control terminal of the first switch element Q1 receives the induced voltage output by the temperature sensing module 11, and the second path terminal of the first switch element Q1 is connected to the common terminal of the first voltage-dividing resistor R1 and the second voltage-dividing resistor R2. Specifically, in the present embodiment, the first switching element Q1 is an N-channel MOSFET fet, the first path end is a drain of the fet, the second path end is a source of the fet, and the first control end is a gate of the fet.
The voltage stabilizing capacitor C1 is connected between the first control terminal of the first switching element Q1 and the ground line GND, and functions as a filter and a voltage stabilizer.
The second switching element Q2 includes a third terminal, a fourth terminal and a second control terminal, the third terminal of the second switching element Q2 receives the input voltage Vin, the second control terminal of the second switching element Q2 is connected to the second terminal of the first switching element Q1, and the fourth terminal of the second switching element Q2 is used for outputting the voltage Vout. Specifically, in the present embodiment, the second switching element Q2 is a P-channel MOSFET fet, the third path end is a source of the MOSFET fet, the fourth path end is a drain of the MOSFET fet, and the second control end is a gate of the MOSFET fet.
The first voltage-dividing resistor R1 and the second voltage-dividing resistor R2 are sequentially provided in series between the first path terminal of the first switching element Q1 and the ground line GND, and the second switching element Q2 can be turned on by arranging the resistances of the first voltage-dividing resistor R1 and the second voltage-dividing resistor R2.
In use, when the ambient temperature of the temperature sensing module 11 is lower than the sensing temperature of the temperature sensing module 11, the sensing voltage output by the temperature sensing module 11 turns off the first switching element Q1 to control the second switching element Q2 to be turned on, and when the ambient temperature of the temperature sensing module 11 is higher than or equal to the sensing temperature of the temperature sensing module 11, the sensing voltage output by the temperature sensing module 11 turns on the first switching element Q1 to control the second switching element Q2 to be turned off.
Specifically, in the present embodiment, the temperature sensing module 11 includes a third voltage dividing resistor R3 and a thermistor R4 connected in series between the first path terminal of the first switching element Q1 and the ground line GND, and a common terminal of the third voltage dividing resistor R3 and the thermistor R4 is used for outputting a sensing voltage, the sensing temperature of the thermistor R4 in the present embodiment is 70-80 ℃, and the impedance response time is less than 1s, so that the change of the ambient temperature can be quickly sensed to protect the device in time. In this embodiment, the thermistor R4 is a ptc thermistor, and the third voltage divider resistor R3 and the ptc thermistor are sequentially connected in series between the first path end of the first switch element Q1 and the ground GND, wherein in order to realize the above-mentioned on-off function of the over-temperature protection circuit 10, the resistance value relationships among the first voltage divider resistor R1, the second voltage divider resistor R2, the ptc thermistor (thermistor R4), and the third voltage divider resistor R3 are as follows:
in the formula, R1Denotes the resistance value of the first divider resistor R1, R2Represents the resistance value, R2, of the second divider resistor R23Represents the resistance value of the third voltage dividing resistor R3, RPTCWhich represents the resistance value of the posistor below the sensed temperature. In addition, the resistance relationship between the first voltage-dividing resistor R1 and the second voltage-dividing resistor R2 can be configured according to the magnitude of the input voltage Vin and the withstand voltage of the second switching element Q2, so that the second switching element Q2 is only required to be kept in saturation conduction and not broken down.
In this way, since the first switching element Q1 is an N-channel MOSFET fet and the second switching element Q2 is a P-channel MOSFET fet in this embodiment, when the ambient temperature of the temperature sensing module 11 is lower than the sensing temperature of the temperature sensing module 11, since the ambient temperature of the temperature sensing module 11 is lower than the sensing temperature of the temperature sensing module 11
The induced voltage received by the first control terminal (gate) of the first switching element Q1 is less than or equal to the voltage of the second pass terminal (source) of the first switching element Q1, so that the first switching element Q1 is turned off, at this time, the voltage of the second control terminal (gate) of the second switching element Q2 is less than the voltage of the third pass terminal (source), and the second switching element Q2 is turned on, and in addition, since the second control terminal of the second switching element Q2 and the first voltage-dividing resistor R1 are connected to the common terminal of the second voltage-dividing resistor R2, the second switching element Q2 can be kept stably turned on, thereby ensuring the normal use of the device. When the ambient temperature of the temperature sensing module 11 is higher than or equal to that of the temperature sensing module 11When sensing temperature, the resistance of the positive temperature coefficient thermistor (thermistor R4) rises linearly, so that the induced voltage received by the first control terminal (gate) of the first switch element Q1 is higher than the voltage of the second terminal (source) of the first switch element Q1, and the first switch element Q1 is turned on, at this time, the output voltage Vin is directly applied to the second voltage-dividing resistor R2, so that the voltage of the second control terminal (gate) of the second switch element Q2 is equal to the voltage of the third terminal (source), and the second switch element Q2 is turned off, thereby turning off the circuit when the ambient temperature is abnormal to prevent the device from being burned due to over-high temperature.
Therefore, in the present embodiment, the temperature sensing module 11, the first voltage-dividing resistor R1 and the second voltage-dividing resistor R2 can reliably control the on/off of the first switching element Q1 and the second switching element Q2, so as to implement the over-temperature protection function, and the structure is simple, and in addition, since the second control terminal of the second switching element Q2 and the common terminal of the first voltage-dividing resistor R1 and the second voltage-dividing resistor R2 are connected, the second switching element Q2 can be stably turned on without being influenced by the fluctuation of the sensing voltage output by the temperature sensing module 11 when the ambient temperature is normal, thereby ensuring the stability of the circuit.
Fig. 2 is a schematic circuit structure diagram of an over-temperature protection circuit according to a second embodiment of the present invention. As shown in fig. 2, the structure and principle of the over-temperature protection circuit 20 of the present embodiment are substantially the same as those of the over-current protection circuit 10, except that the thermistor R4 in the temperature sensing module 21 of the present embodiment is a negative temperature coefficient thermistor, and the negative temperature coefficient thermistor and the third voltage dividing resistor R3 are sequentially connected in series between the first path end of the first switching element Q1 and the ground line GND.
Specifically, in order to realize the over-temperature protection function, the resistance value relationships among the first voltage-dividing resistor R1, the second voltage-dividing resistor R2, the negative temperature coefficient thermistor R4 (thermistor R4), and the third voltage-dividing resistor R3 in this embodiment are as follows:
in the formula, R1Represents the firstResistance value of voltage dividing resistor R1, R2Represents the resistance value, R2, of the second divider resistor R23Represents the resistance value of the third voltage dividing resistor R3, RNTCIndicating the resistance of the ntc thermistor below the sensed temperature. In addition, the resistance relationship between the first voltage-dividing resistor R1 and the second voltage-dividing resistor R2 can be configured according to the magnitude of the input voltage Vin and the withstand voltage of the second switching element Q2, so that the second switching element Q2 is only required to be kept in saturation conduction and not broken down.
In this way, since the first switching element Q1 is an N-channel MOSFET fet and the second switching element Q2 is a P-channel MOSFET fet in this embodiment, when the ambient temperature of the temperature sensing module 21 is lower than the sensing temperature of the temperature sensing module 21, since the ambient temperature is lower than the sensing temperature of the temperature sensing module 21
The induced voltage received by the first control terminal (gate) of the first switching element Q1 is less than or equal to the voltage of the second pass terminal (source) of the first switching element Q1, so that the first switching element Q1 is turned off, at this time, the voltage of the second control terminal (gate) of the second switching element Q2 is less than the voltage of the third pass terminal (source), and the second switching element Q2 is turned on, and in addition, since the second control terminal of the second switching element Q2 and the first voltage-dividing resistor R1 are connected to the common terminal of the second voltage-dividing resistor R2, the second switching element Q2 can be kept stably turned on, thereby ensuring the normal use of the device. When the ambient temperature of the temperature sensing module 21 is higher than or equal to the sensing temperature of the temperature sensing module 21, the resistance of the negative temperature coefficient thermistor (thermistor R4) decreases linearly, so that the induced voltage received by the first control terminal (gate) of the first switching element Q1 is higher than the voltage of the second terminal (source) of the first switching element Q1, so that the first switching element Q1 is turned on, at this time, the output voltage Vin is directly applied to the second voltage divider resistor R2, so that the voltage of the second control terminal (gate) of the second switching element Q2 is equal to the voltage of the third terminal (source), and the second switching element Q2 is turned off, thereby opening the circuit when the ambient temperature is abnormal to prevent the device from being burned due to over-high temperature.
The embodiment of the invention also provides a data line which comprises the over-temperature protection circuit. It should be noted that the data line according to the embodiment of the present invention includes, but is not limited to, various USB data lines, and particularly, taking a USB Type-C data line as an example, the input voltage Vin and the ground line GND signal are respectively a VBUS signal and a GND signal on the USB Type-C data line, and the thermistor R4 in the temperature sensing module is to be placed at a position close to the USB Type-C interface to accurately detect the temperature of the USB Type-C interface, so as to effectively prevent the USB Type-C interface from being burnt out due to excessive temperature.
In the over-temperature protection circuit of the embodiment of the invention, the on-off of the first switch element and the second switch element can be effectively controlled through the temperature sensing module, the first divider resistor and the second divider resistor, so that the over-temperature protection function is realized, the structure is simple and reliable, in addition, the second control end of the second switch element and the common end of the first divider resistor and the second divider resistor are connected, and the resistance value relation of the first divider resistor and the second divider resistor is configured according to the magnitude of the input voltage and the withstand voltage of the second switch element, so that the second switch element can be kept in stable conduction without being influenced by the fluctuation of the sensing voltage output by the temperature sensing module when the ambient temperature is normal, and the stability of the circuit is ensured.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. An over-temperature protection circuit is characterized by comprising a temperature sensing module, a first switch element, a second switch element, a first divider resistor and a second divider resistor;
the temperature sensing module is used for outputting sensing voltage according to the ambient temperature;
the first switch element comprises a first path end, a second path end and a first control end, the first path end receives input voltage, the first control end receives the induction voltage, and the second path end is connected with a common end of the first divider resistor and the second divider resistor;
the first voltage-dividing resistor and the second voltage-dividing resistor are sequentially connected in series between the first path end and a grounding wire;
the second switch element comprises a third path end, a fourth path end and a second control end, the third path end receives the input voltage, the second control end is connected with the second path end of the first switch element, and the fourth path end is used for outputting voltage;
when the ambient temperature of the temperature sensing module is lower than the sensing temperature of the temperature sensing module, the first switching element is turned off by the sensing voltage output by the temperature sensing module to control the second switching element to be turned on, and when the ambient temperature of the temperature sensing module is higher than or equal to the sensing temperature of the temperature sensing module, the first switching element is turned on by the sensing voltage output by the temperature sensing module to control the second switching element to be turned off;
the temperature sensing module comprises a third voltage-dividing resistor and a thermistor which are connected in series between a first path end of the first switching element and a ground wire, and a common end of the third voltage-dividing resistor and the thermistor is used for outputting the sensing voltage;
the thermistor is a positive temperature coefficient thermistor, and the third voltage dividing resistor and the positive temperature coefficient thermistor are sequentially connected in series between the first pass end of the first switch element and the grounding wire;
the resistance value relationships among the first voltage-dividing resistor, the second voltage-dividing resistor, the positive temperature coefficient thermistor and the third voltage-dividing resistor are as follows:
in the formula, the resistance value of the first divider resistor, the resistance value of the second divider resistor, the resistance value of the third divider resistor, and the resistance value of the positive temperature coefficient thermistor below the sensing temperature are shown.
2. The over-temperature protection circuit of claim 1, wherein the first switching element is an N-channel MOSFET field effect transistor and the second switching element is a P-channel MOSFET field effect transistor.
3. The over-temperature protection circuit according to claim 1, wherein the thermistor is a negative temperature coefficient thermistor, and the negative temperature coefficient thermistor and the third voltage dividing resistor are sequentially connected in series between the first path terminal of the first switching element and a ground line.
4. The over-temperature protection circuit of claim 3, wherein resistance values of the first voltage-dividing resistor, the second voltage-dividing resistor, the negative temperature coefficient thermistor and the third voltage-dividing resistor have a relationship of:
in the formula, R1Represents a resistance value, R, of the first divider resistor2Represents a resistance value, R, of the second divider resistor3Represents a resistance value, R, of the third voltage dividing resistorNTCAnd the resistance value of the negative temperature coefficient thermistor is expressed when the negative temperature coefficient thermistor is lower than the sensing temperature.
5. The over-temperature protection circuit of claim 1, wherein the thermistor has a sensing temperature of 70-80 ℃ and an impedance response time of less than 1 s.
6. The over-temperature protection circuit according to claim 1, further comprising a voltage stabilizing capacitor connected between the first control terminal of the first switching element and a ground line.
7. A data line comprising the excess temperature protection circuit according to any one of claims 1 to 6.
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| US11233386B2 (en) * | 2019-02-27 | 2022-01-25 | Google Llc | USB Type-C port short protection |
| CN110277700B (en) * | 2019-06-18 | 2020-11-13 | 维沃移动通信有限公司 | A kind of interface unit |
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| CN101588060A (en) * | 2009-07-03 | 2009-11-25 | 欣旺达电子股份有限公司 | Temperature protection circuit and a method for preventing battery temperature from being overhigh by using the circuit |
| CN102623977A (en) * | 2011-01-28 | 2012-08-01 | 富泰华工业（深圳）有限公司 | Electronic product |
| CN103036203A (en) * | 2011-10-10 | 2013-04-10 | 鸿富锦精密工业（深圳）有限公司 | Protection circuit |
| CN207380129U (en) * | 2017-04-13 | 2018-05-18 | 深圳市三诺电子有限公司 | A kind of excess temperature overvoltage crowbar |
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| US10177647B2 (en) * | 2015-09-10 | 2019-01-08 | Ut-Battelle, Llc | DC current controller for continuously variable series reactor |
| CN106602155B (en) * | 2016-12-19 | 2024-03-15 | 珠海格力电器股份有限公司 | Battery cell |
| CN206908279U (en) * | 2017-04-21 | 2018-01-19 | 深圳小黑牛检测技术有限公司 | A kind of lithium battery group overtemperature and overcurrent double protecting device |
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| CN101588060A (en) * | 2009-07-03 | 2009-11-25 | 欣旺达电子股份有限公司 | Temperature protection circuit and a method for preventing battery temperature from being overhigh by using the circuit |
| CN102623977A (en) * | 2011-01-28 | 2012-08-01 | 富泰华工业（深圳）有限公司 | Electronic product |
| CN103036203A (en) * | 2011-10-10 | 2013-04-10 | 鸿富锦精密工业（深圳）有限公司 | Protection circuit |
| CN207380129U (en) * | 2017-04-13 | 2018-05-18 | 深圳市三诺电子有限公司 | A kind of excess temperature overvoltage crowbar |
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