CN108988125A - In infrared superlattices band-to-band transition laser and preparation method thereof - Google Patents
In infrared superlattices band-to-band transition laser and preparation method thereof Download PDFInfo
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- CN108988125A CN108988125A CN201810842211.8A CN201810842211A CN108988125A CN 108988125 A CN108988125 A CN 108988125A CN 201810842211 A CN201810842211 A CN 201810842211A CN 108988125 A CN108988125 A CN 108988125A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
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Abstract
Infrared superlattices band-to-band transition laser in one kind, comprising: substrate is N-type gallium antimony material；Lower limit layer is prepared on substrate, is the AlGaAsSb of n-type doping；Lower waveguide layer is prepared on lower limit layer, is undoped AlGaInAsSb；Active area is prepared on lower waveguide layer, is superlattices band-to-band transition active area, the active area includes: the InAs/AlSb superlattices for transporting electronics；And transport the InGaSb/AlSb superlattices in hole；Upper ducting layer, is prepared on active area, is undoped AlGaInAsSb；Upper limiting layer is prepared on ducting layer, the AlGaAsSb of p-type doping；And upper contact layer, it is prepared on upper limiting layer, for the GaSb of p-type doping；The laser can alleviate the problem of quantum-well laser L-band is easy the limitation by auger recombination, and interband cascade lasers are due to using W type active area structure, cause its gain smaller, and itself does not lead to by force the technical problems such as its short wavelength's work relatively difficult to achieve for the restriction effect of electrons and holes.
Description
Technical field
This disclosure relates to infrared superlattices band-to-band transition laser in middle infrared semiconductor laser field more particularly to one kind
Device and preparation method thereof.
Background technique
2-5 mu m waveband includes very important atmospheric window, and asymmetric atom and polyatomic molecule gas are in 2-5um wave band
It is lower that there are strong absorption peaks, such as hydrone just stronger absorption peak, methane CH at 2.7um4There is absorption peak in 3.41um,
Hydrogen chloride gas HCl has absorption peak at 3.54um, and this characteristic is that have the attribute of infrared active substance inherently.
For example in 2-2.5 μm of wave band, water vapor absorption is especially weak, and some polluted gas, such as C0, CH4, NO2, the suction of these gases
Receipts are especially strong, so being extremely suitble to environmental monitoring.Mid-infrared laser gas detection technology is compared with other gas detection technologies, tool
Have a series of advantages: measurement range is wide, infrared band in wavelength covering；Detection accuracy is high；Fast response time, it can be achieved that exist in real time
Line measurement；Selectivity is good, and output wavelength is single, and tuning precision is high, is not interfered by background gas；The open survey of long light path can be achieved
Amount.Absorption spectroscopy techniques (TDLAS) and optoacoustic spectroscopy (PAS) based on mid-infrared laser device divide online in industrial gasses
All there is broad application prospect in the fields such as analysis, environmental monitoring, breathing detection.In addition to this, in military field, current is infrared
The seeker infrared band staring imaging guidance development into forth generation 2-5um wave band from the homing of the first generation, should
Technology substantially increases sensitivity and the anti-interference ability of infrared guidance guided missile, makes which give farther attack distances, and makes
The efficiency such as some traditional infrared counteraction means such as flash lamp, IR decoy subtract greatly, threaten in war very big.Tackle it most
Effective method is namely based on infrared semiconductor laser counterweapon system in 2-5 μm, can make focal plane in guidance system
The failure of detector array blinding or even complete physical destruction.In addition to this, the laser of this wave band may be also used in free sky
Between in optic communication, free-space optical communication system carries out optical signal transmission as transmission medium using atmosphere, has high orientation
Property, height hidden property, highly confidential property.2-5 μm and 8-13 μm of the lasing ejected wave of mid and far infrared semiconductor laser long covering this
Two atmospheric windows, can be used as optical sender and are communicated, and greatly reduce the boisterous influence such as haze, improve stability.
Free space communication simultaneously is without being laid with fiber optic network, so that it may communicate, communicate to star over long distances.
The laser that middle infrared band may be implemented at present mainly has GaSb base one kind quantum-well laser, and GaSb base is a kind of
Quantum Well cascaded laser and GaSb base interband cascade lasers these three, common a kind of quantum-well laser is due in length
Wavelength range is easy to be limited by auger recombination, it is more difficult to realize the lasing compared with long-wave band, and interband cascade lasers are due to adopting
With W type active area structure, it is more difficult to realize population inversion, and itself does not lead to by force the restriction effect of electrons and holes
The work of its short wavelength relatively difficult to achieve.
Disclosure
(1) technical problems to be solved
Present disclose provides superlattices band-to-band transition lasers infrared in one kind and preparation method thereof, to alleviate the prior art
Middle quantum-well laser L-band is easy the problem of being limited by auger recombination and interband cascade lasers due to adopting
With W type active area structure, cause its gain smaller, and itself for the restriction effect of electrons and holes do not cause by force its compared with
Hardly possible realizes the technical problems such as short wavelength's work.
(2) technical solution
The disclosure provides infrared superlattices band-to-band transition laser in one kind, comprising: substrate is N-type gallium antimony material；Lower limit
Preparative layer is prepared on substrate, is the AlGaAsSb of n-type doping；Lower waveguide layer is prepared on lower limit layer, is undoped
AlGaInAsSb；Active area is prepared on lower waveguide layer, is superlattices band-to-band transition active area, comprising: transport electronics
InAs/AlSb superlattices；And transport the InGaSb/A1Sb superlattices in hole；Upper ducting layer, is prepared on active area, is non-
The A1GaInAsSb of doping；Upper limiting layer is prepared on ducting layer, the AlGaAsSb of p-type doping；And upper contact layer, system
For in the GaSb on upper limiting layer, adulterated for p-type.
In the embodiments of the present disclosure, the InAs/AlSb superlattice period for transporting electronics is 3-9 period, InAs's
Thickness gradual change in superlattices, thickness in 1-3.5nm, A1Sb with a thickness of 1-2nm.
In the embodiments of the present disclosure, the InGaSb/AlSb superlattices for transporting hole, the wherein thickness of InGaSb and A1Sb
Gradual change is spent, the period is 1-4 period, and wherein In group is divided between 0.25-0.4 in InGaSb hole trap, and the InGaSb is empty
Cave trap with a thickness of 1-4nm, AlSb with a thickness of 1-2nm.
In the embodiments of the present disclosure, the lower limit layer is the aluminum gallium arsenide antimony material of n-type doping, and component ratio is
Al0.6-0.9GaAs0.02-0.04Sb, tellurium doping concentration are 1e17-1e18em-3, with a thickness of 1.0 μm -2 μm.
In the embodiments of the present disclosure, the lower waveguide layer is undoped Al-Ga-In-As antimony material, component ratio Al0.1- 0.3GaIn0.2-0.4As0.15-0.35Sb, with a thickness of 300nm-600nm.
In the embodiments of the present disclosure, the upper ducting layer is the Al-Ga-In-As antimony material of p-type doping, and component ratio is
Al0.1-0.3GaIn0.2-0.4As0.15-0.35Sb, with a thickness of 300nm-600nm.
In the embodiments of the present disclosure, the upper limiting layer is the aluminum gallium arsenide antimony material of p-type doping, and component ratio is
Al0.3-0.9GaAs0.02-0.04Sb, beryllium doping concentration are 1e18-1e19cm-3, with a thickness of 1.0 μm -2 μm.
In the embodiments of the present disclosure, the upper contact layer is the gallium antimony material of p-type doping, and beryllium doping concentration is 1e19-
8e19cm-3, with a thickness of 250nm-500nm.
In another aspect of the present disclosure, a kind of preparation method is provided, is used to prepare middle infrared excess described in any of the above embodiments
Lattice band-to-band transition laser, comprising: step A: epitaxial wafer used in infrared superlattices band-to-band transition laser in preparation；Step
B: the ridge waveguide of laser is prepared on the prepared epitaxial wafer of step A；Step C: ridge waveguide has been prepared in step B
Epitaxial wafer surface deposition insulating layer；Step D: on the basis of step C, the etching insulating layer above corresponding vallum, preparation electricity
Pole window；Step E, p-type front electrode is prepared above the electrode window through ray prepared by step D；
Step F, N-shaped rear electrode is prepared at the back side of substrate；Step G, piece is dissociated into a bar item, and in the solution of bar item
From plated film on face；And step H, dissociation tube core, flip chip bonding is on heat sink, thus infrared superlattices band-to-band transition laser in being made
Device.
In the embodiments of the present disclosure, the material of insulating layer described in step C includes: SiO2Or Si3N4。
(3) beneficial effect
It can be seen from the above technical proposal that infrared superlattices band-to-band transition laser and preparation method thereof is extremely in the disclosure
One of them or in which a part are had the advantages that less:
(1) transition of electronics occurs in the band-to-band transition of two kinds of superlattices, and this mechanism can guarantee under bias, produces
Raw huge population inversion；
(2) due to the restriction effect of superlattices itself, there will be very strong limitation to electrons and holes, it is ensured that electronics
With the effective use in hole；
(3) radiative interband is compound due to being similar to for superlattices band-to-band transition mechanism, and the wave band of infrared relatively long wave can in
Effectively to reduce the generation of auger recombination；
(4) gain of active area can effectively be improved；
It (5) can effective adjusting wavelength by changing the width of trap in superlattices.
Detailed description of the invention
Fig. 1 is the epitaxial structure schematic diagram of infrared superlattices band-to-band transition laser in the embodiment of the present disclosure；
Fig. 2 is the energy of the superlattices band-to-band transition active area of infrared superlattices band-to-band transition laser in the embodiment of the present disclosure
Band figure.
Fig. 3 is the light of the superlattices band-to-band transition active area of infrared superlattices band-to-band transition laser in the embodiment of the present disclosure
It causes fluorescence Spectra (PL spectrum).
Fig. 4 is the process flow chart of infrared superlattices band-to-band transition laser in the embodiment of the present disclosure.
Fig. 5 is the preparation method step schematic diagram of infrared superlattices band-to-band transition laser in the embodiment of the present disclosure.
[embodiment of the present disclosure main element symbol description in attached drawing]
100- substrate；200- lower limit layer；300- lower waveguide layer；
400- active area；
410-InAs/AlSb superlattices；420-InGaSb/AlSb superlattices；
Ducting layer on 500；600- upper limiting layer；The upper contact layer of 700-.
Specific embodiment
Present disclose provides superlattices band-to-band transition laser infrared in one kind and preparation method thereof, the laser is used
The electron transition transmitted in superlattices to the hole state in another superlattices band-to-band transition mechanism, this band-to-band transition
Method can effectively increase the population inversion of active area, increase the gain of laser, can also be by adjusting in superlattices
The width of trap carrys out the excitation wavelength of adjusting device, additionally can effectively inhibit the generation of the auger recombination under long wave, make
Device can in biggish work in wavelength ranges, realization infrared band work, can be great using this structure
Improve active area gain and laser performance.
In the embodiments of the present disclosure, infrared superlattices band-to-band transition laser is jumped by the electronics in superlattices in described
Recombination luminescence in hole is adjourned, this laser can change wavelength by adjusting InAs layers in superlattices of thickness, and
Superlattice structure itself has strong limitation for electronics, and electronics can be guaranteed almost by forming micro-strip in superlattices under bias
Without hindrance transmission, this is advantageously implemented the reversion of population.In addition, using the structure of two class superlattices of band-to-band transition can be with
Effectively reduce auger recombination rate.Therefore infrared superlattices band-to-band transition structure laser can be improved effectively in the disclosure
The gain of active area, the convenient wavelength for adjusting laser works, the performance of laser with higher.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
In the disclosure, infrared superlattices band-to-band transition laser in one kind is provided, Fig. 1 is the epitaxy junction of the laser
Structure schematic diagram, as shown in Figure 1, in described infrared superlattices band-to-band transition laser epitaxial structure, comprising:
Substrate 100 is N-type gallium antimony material；
Lower limit layer 200 is prepared on substrate 100, is the AlGaAsSb of n-type doping；
Lower waveguide layer 300 is prepared on lower limit layer 200, is undoped AlGaInAsSb；
Active area 400 is prepared on lower waveguide layer 300, is superlattices band-to-band transition active area；
Upper ducting layer 500, is prepared on active area 400, is undoped AlGaInAsSb；
Upper limiting layer 600 is prepared on ducting layer 500, the AlGaAsSb of p-type doping；And
Upper contact layer 700, is prepared on upper limiting layer 600, for the GaSb of p-type doping.
In the embodiments of the present disclosure, Fig. 2 be in infrared superlattices band-to-band transition laser superlattices band-to-band transition it is active
The energy band diagram in area, as shown in Fig. 2, the active area 400, comprising: transport the InAs/AlSb superlattices 410 of electronics；And it transports
The InGaSb/AlSb superlattices 420 in hole.
In the InAs/AlSb superlattices 410 for transporting electronics, InAs gradient thickness, thickness about in 1-3.5nm, and
The thickness of AlSb about 1-2nm.
In the embodiments of the present disclosure, the InAs/AlSb superlattices 410 for transporting electronics are substantially in 3-9 period, InAs
Thickness gradual change in superlattices, guarantee that the micro-strip holding of superlattices under voltage is horizontal with this, pass through the thickness for adjusting InAs
The laser of middle infrared band 2-5um may be implemented.
In the embodiments of the present disclosure, the InGaSb/AlSb superlattices 420 for transporting hole, wherein InGaSb and AlSb
Gradient thickness, the level of hole energy level holding under voltage is guaranteed with this, the period is 1-4 period, the wherein hole InGaSb
In group is divided between 0.25-0.4 in trap, to guarantee to have enough holes to limit, wherein the InGaSb hole trap with a thickness of
1-4nm, the thickness of the AlSb can adjust lasing by adjusting InGaSb hole trap and In component about in 1-2nm
Wavelength.
In the embodiments of the present disclosure, the lower limit layer 200 is the aluminum gallium arsenide antimony material of n-type doping, and component ratio is
Al0.6-0.9GaAs0.02-0.04Sb, tellurium doping concentration are 1e17-1e18cm-3, with a thickness of 1.0 μm -2 μm.
In the embodiments of the present disclosure, the lower waveguide layer 300 is undoped Al-Ga-In-As antimony material, and component ratio is
Al0.1-0.3GaIn0.2-0.4As0.15-0.35Sb, with a thickness of 300nm-600nm.
In the embodiments of the present disclosure, the upper ducting layer 500 is the Al-Ga-In-As antimony material of p-type doping, component ratio
For Al0.1-0.3GaIn0.2-0.4As0.15-0.35Sb, with a thickness of 300nm-600nm.
In the embodiments of the present disclosure, the upper limiting layer 600 is the aluminum gallium arsenide antimony material of p-type doping, and component ratio is
Al0.3-0.9GaAs0.02-0.04Sb, beryllium doping concentration are 1e18-1e19cm-3, with a thickness of 1.0 μm -2 μm.
In the embodiments of the present disclosure, the upper contact layer 700 is the gallium antimony material of p-type doping, and beryllium doping concentration is 1e19-
8e19cm-3, with a thickness of 250nm-500nm.
In the embodiments of the present disclosure, infrared superlattices band-to-band transition laser in described, active area is using a kind of novel
Transition mechanism, one kind or two class Quantum Well transition, this transition that this transition mechanism is different from common lasers be
It is completed in the superlattices InAs/AlSb of bound electron and the superlattices InGaSb/AlSb of bound hole, due to this transition
To be carried out in a kind of material, so it is substantially a kind of band-to-band transition, Fig. 2 be in infrared superlattices band-to-band transition swash
The energy band diagram of the superlattices band-to-band transition active area of light device, as shown in Fig. 2, active area includes the superlattices InAs/ for transporting electronics
AlSb, InAs gradient thickness in this superlattices, thickness is about in 1-3.5nm, and the thickness of AISb about 1-2nm, this superlattices
Substantially 3-9 period, thickness gradual change in super character of InAs guarantees that the micro-strip of superlattices under voltage keeps water with this
Flat, the laser of middle infrared band 2-5um may be implemented in the thickness by adjusting InAs, and the superlattices in hole are transported in Quantum Well
InGaSb/AlSb superlattices are similarly the superlattices of gradient thickness, guarantee the level of hole energy level holding under voltage with this,
Period is 1-4 period, and wherein In group is divided between 0.25-0.4 in InGaSb hole trap, to guarantee to have enough holes to limit
System, wherein InGaSb hole trap with a thickness of 1-4nm, wherein the thickness of AlSb, can be by adjusting InGaSb about in 1-2nm
Hole trap and In component adjust excitation wavelength, and InAs/A1Sb superlattices are mainly electronics upper state Ee, InGaSb/A1Sb
Superlattices are the lower energy state E in holeh, electronics and hole it is compound betide two kinds of superlattices before, be the oblique transition of interband.This
Kind band-to-band transition mechanism can effectively inhibit in the auger recombination rate compared with long-wave band.This band-to-band transition machine that the disclosure proposes
System effectively can generate population inversion using the forward bias of pn-junction, increase gain.And the adjusting that can be convenient it is entire in
The wavelength of infrared band.With preferable device performance, as shown in figure 3, infrared superlattices band-to-band transition laser active in being
The PL spectrum of area infrared 3621nm in.
In the embodiments of the present disclosure, the ridge waveguide structure that infrared superlattices band-to-band transition laser uses in described, but
The disclosure is not limited thereto.Those skilled in the art should clear enough, waveguiding structure may be double channel in laser
Ridge waveguide structure.In the embodiment of the present disclosure, the depth for etching the ridge waveguide structure of formation can be to limit on A1GaAsSb
Ducting layer lower surface any of the above position below layer upper surface and on A1GaInAsSb, the width of double channel ridge waveguide can be with
It can be about 100-200um, this field skill for wide stripe shape for the slab waveguide structure of single structure for fillet type 5-35um
Art personnel are not it should be clear that specific waveguiding structure can discuss emphasis as main to be a variety of in this example.
In the disclosure, a kind of preparation method is also provided, infrared superlattices band-to-band transition laser in described is used to prepare,
Fig. 4 is the process flow chart of the preparation method, and Fig. 5 is the preparation method step schematic diagram, in conjunction with shown in Fig. 4 and Fig. 5, institute
Stating preparation method includes:
Step A: epitaxial wafer used in infrared superlattices band-to-band transition laser in preparation；
Specially GaSb substrate is placed in molecular beam epitaxial device, is sequentially prepared lower limit layer, lower waveguide layer, superlattices
Band-to-band transition active area, upper ducting layer, upper limiting layer, upper contact layer, i.e., extension mixes the doping concentration of Te and is on GaSb substrate
5e17Al0.85Ga0.15As0.07Sb0.93Lower limit layer 200, thickness are about 1.5um；Extension undopes later
Al0.20Ga0.55In0.25As0.33Sb0.67Lower waveguide layer 300, thickness are about 400nm；Then 5 couples of extension of InAs/A1Sb, 4 pairs
In0.35Ga0.65Sb/A1Sb superlattices band-to-band transition active area；Extension undopes 400nm's later
Al0.20Ga0.55In0.25As0.33Sb0.67Upper ducting layer；And Be and doping concentration are mixed for 5e17Al0.85Ga0.15As0.07Sb0.93
Upper limiting layer；Last extension mixes Be and heavy dopant concentration is 5e18GaSb on contact layer.
Step B: the ridge waveguide of laser is prepared on the prepared epitaxial wafer of step A, comprising:
Sub-step B1: the spin coating photoresist on upper contact layer is covered with common contact exposure method with photolithography plate
Film, prepares the mask pattern of ridge waveguide, and whole figure is located at the upper surface of device；And
Sub-step B2: exposure mask is done with photoresist, etches upper surface with inductance coupled plasma (ICP) method, thus
To ridge waveguide.
Step C: in the epitaxial wafer surface deposition insulating layer for having prepared ridge waveguide；
Utilize the insulating layer of plasma reinforced chemical vapour deposition (PECVD) method deposition 250-300nm thickness, the insulating layer
Material include: SiO2Or Si3N4；
Step D: on the basis of step C, the etching insulating layer above corresponding vallum prepares electrode window through ray.
Using contact photolithography, exposure mask is done using photolithography plate above ridge waveguide, prepares the electricity above ridge waveguide
Pole graph window, then does exposure mask using photoresist, using the insulating layer of ICP etching 250nm, so that device p-type contact layer is sudden and violent
Expose and forms Ohmic contact for metal electrode later.
Step E, p-type front electrode is prepared above the electrode window through ray prepared by step D.
In the upper surface of device using magnetically controlled sputter method sputtering Ti/Pu/Au with a thickness of 20/50/300nm, to form the face P
Ohmic contact.
Step F, N-shaped rear electrode is prepared at the back side of substrate.
Attenuated polishing is carried out to the lower surface of device, by the GaSb substrate thinning of device to 150-200um, and is thrown
Light；Rapid thermal annealing is put into a thickness of 5/100/300nm using the Ohmic contact that Ni/AuGe/Au forms the face N later again
(RTP) it anneals in equipment, so as to form the Ohmic contact in the face N.
Step G, piece is dissociated into a bar item, and the plated film on bar dissociation face of item；
The Al of front cavity surface plating anti-reflection film λ/42O3, the Al of rear facet plating high-reflecting film 200nm2O3The Au of/100nm.
Step H, tube core is dissociated, flip chip bonding is on heat sink, thus infrared superlattices band-to-band transition laser in being made.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.It should be noted that in attached drawing or saying
In bright book text, the implementation for not being painted or describing is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it, such as:
(1) inductively coupled plasma body (ICP) can also be substituted with reactive ion etching (RIE) method；
(2)SiO2Insulating layer may be used as SiNxSubstitution；
According to above description, those skilled in the art should to superlattices band-to-band transition laser infrared in the disclosure and its
Preparation method has clear understanding.
In conclusion being used present disclose provides superlattices band-to-band transition laser infrared in one kind and preparation method thereof
A kind of method of superlattices band-to-band transition, the method for this band-to-band transition can effectively increase the population inversion of active area,
The gain for increasing laser, can also carry out the excitation wavelength of adjusting device by adjusting the width of trap in superlattices, additionally due to
The generation that the auger recombination under long wave can effectively be inhibited using the mechanism for being similar to band-to-band transition, allows device to exist
Biggish work in wavelength ranges, therefore laser can cover infrared 2-5um wave band in entire, the work of infrared band in realization
Make, active area gain and laser performance can greatly be improved using this structure.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Those skilled in the art will understand that can be carried out adaptively to the module in the equipment in embodiment
Change and they are arranged in one or more devices different from this embodiment.It can be the module or list in embodiment
Member or component are combined into a module or unit or component, and furthermore they can be divided into multiple submodule or subelement or
Sub-component.Other than such feature and/or at least some of process or unit exclude each other, it can use any
Combination is to all features disclosed in this specification (including adjoint claim, abstract and attached drawing) and so disclosed
All process or units of what method or apparatus are combined.Unless expressly stated otherwise, this specification is (including adjoint power
Benefit require, abstract and attached drawing) disclosed in each feature can carry out generation with an alternative feature that provides the same, equivalent, or similar purpose
It replaces.Also, in the unit claims listing several devices, several in these devices can be by same hard
Part item embodies.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. infrared superlattices band-to-band transition laser in one kind, comprising:
Substrate (100) is N-type gallium antimony material；
Lower limit layer (200) is prepared on substrate (100), is the AlGaAsSb of n-type doping；
Lower waveguide layer (300) is prepared on lower limit layer (200), is undoped AlGaInAsSb；
Active area (400) is prepared on lower waveguide layer (300), is superlattices band-to-band transition active area, comprising:
Transport the InAs/AlSb superlattices (410) of electronics；And
Transport the InGaSb/AlSb superlattices (420) in hole；
Upper ducting layer (500), is prepared on active area (400), is undoped AlGaInAsSb；
Upper limiting layer (600) is prepared on ducting layer (500), the AlGaAsSb of p-type doping；And
Upper contact layer (700), is prepared on upper limiting layer (600), for the GaSb of p-type doping.
2. infrared superlattices band-to-band transition laser according to claim 1, wherein the InAs/ for transporting electronics
AlSb superlattices (410) period 3-9 period, the gradual change in superlattices of the thickness of InAs, thickness in 1-3.5nm, AlSb's
With a thickness of 1-2nm.
3. infrared superlattices band-to-band transition laser according to claim 1, wherein the hole that transports
InGaSb/AlSb superlattices (420), wherein the gradient thickness of InGaSb and AlSb, period are 1-4 period, wherein
In group is divided between 0.25-0.4 in InGaSb hole trap, the InGaSb hole trap with a thickness of 1-4nm, AlSb with a thickness of
1-2nm。
4. infrared superlattices band-to-band transition laser according to claim 1, wherein the lower limit layer (200) is N
The aluminum gallium arsenide antimony material of type doping, component ratio Al0.6-0.9GaAs0.02-0.04Sb, tellurium doping concentration are 1e17-1e18cm-3,
With a thickness of 1.0 μm -2 μm.
5. infrared superlattices band-to-band transition laser according to claim 1, wherein the lower waveguide layer (300) is
Undoped Al-Ga-In-As antimony material, component ratio Al0.1-0.3GaIn0.2-0.4As0.15-0.35Sb, with a thickness of 300nm-600nm.
6. infrared superlattices band-to-band transition laser according to claim 1, wherein the upper ducting layer (500) is P
The Al-Ga-In-As antimony material of type doping, component ratio Al0.1-0.3GaIn0.2-0.4As0.15-0.35Sb, with a thickness of 300nm-
600nm。
7. infrared superlattices band-to-band transition laser according to claim 1, wherein the upper limiting layer (600) is P
The aluminum gallium arsenide antimony material of type doping, component ratio Al0.3-0.9GaAs0.02-0.04Sb, beryllium doping concentration are 1e18-1e19cm-3,
With a thickness of 1.0 μm -2 μm.
8. infrared superlattices band-to-band transition laser according to claim 1, wherein the upper contact layer (700) is P
The gallium antimony material of type doping, beryllium doping concentration are 1e19-8e19cm-3, with a thickness of 250nm-500nm.
9. a kind of preparation method, be used to prepare claim 1 to 8 it is described in any item in infrared superlattices band-to-band transition laser
Device, comprising:
Step A: epitaxial wafer used in infrared superlattices band-to-band transition laser in preparation；
Step B: the ridge waveguide of laser is prepared on the prepared epitaxial wafer of step A；
Step C: the epitaxial wafer surface deposition insulating layer of ridge waveguide has been prepared in step B；
Step D: on the basis of step C, the etching insulating layer above corresponding vallum prepares electrode window through ray；
Step E, p-type front electrode is prepared above the electrode window through ray prepared by step D；
Step F, N-shaped rear electrode is prepared at the back side of substrate；
Step G, piece is dissociated into a bar item, and the plated film on bar dissociation face of item；And
Step H, tube core is dissociated, flip chip bonding is on heat sink, thus infrared superlattices band-to-band transition laser in being made.
10. preparation method according to claim 9, wherein the material of insulating layer described in step C includes: SiO2Or
Si3N4。
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| CN112421375A (en) * | 2020-11-18 | 2021-02-26 | 长春理工大学 | Intermediate infrared band laser epitaxial structure, intermediate infrared band micro-cavity laser, preparation method and application thereof, and detection device |
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