CN108987526A - The polysilicon membrane preparation method of solar panel - Google Patents
The polysilicon membrane preparation method of solar panel Download PDFInfo
- Publication number
- CN108987526A CN108987526A CN201710402180.XA CN201710402180A CN108987526A CN 108987526 A CN108987526 A CN 108987526A CN 201710402180 A CN201710402180 A CN 201710402180A CN 108987526 A CN108987526 A CN 108987526A
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- China
- Prior art keywords
- amorphous silicon
- polysilicon
- energy
- film
- membrane
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 30
- 239000012528 membrane Substances 0.000 title claims abstract description 27
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000002344 surface layer Substances 0.000 claims abstract description 5
- 230000009466 transformation Effects 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 abstract description 10
- 230000008025 crystallization Effects 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 206010037660 Pyrexia Diseases 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 19
- 239000013078 crystal Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910003822 SiHCl3 Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021487 silica fume Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of polysilicon membrane preparation methods of solar panel, the method is the following steps are included: be incident on amorphous silicon membrane surface using the high-energy that moment laser pulse generates, only thermal energy effect is generated in the depth of film surface layer 100nm thickness, reach amorphous silicon membrane not less than 1000 DEG C in moment, to realize transformation of the amorphous silicon membrane to polysilicon membrane.Preparation method of the invention can use glass substrates as substrate, not only realize the preparation of p-Si film, but also be able to satisfy the requirement of LCD and OEL to transparent substrates.Major advantage is that pulse width is short (15~50ns), and substrate fever is small.By selecting also to can get mixing crystallization, the i.e. mixture of polysilicon and amorphous silicon.
Description
Technical field
The present invention relates to low temperature polycrystalline silicon technical fields, and in particular to a kind of polysilicon membrane preparation of solar panel
Method.
Background technique
Polysilicon is a kind of form of elemental silicon.When the elemental silicon of melting solidifies under the conditions of supercooling, silicon atom is with Buddha's warrior attendant
Stone lattice morphologic arrangement grows up to the different crystal grain of high preferred orientation at many nucleus, such as these nucleus, then these crystal grain combine,
Just crystallize into polysilicon.Utility value: it can be seen that its development trend is monocrystalline from the development process of current international solar cell
Silicon, polysilicon, band-like silicon, thin-film material (including microcrystalline silicon film, compound base film and dye film).
The production technology of polysilicon is mainly improved Siemens and silane thermal decomposition process.Siemens Method is by way of vapor deposition
Column of polysilicon is produced, in order to improve raw material availability and environmental-friendly, closed loop is used on the basis of the former and produces work
Skill, that is, improved Siemens.The technique reacts industrial silica fume with HCl, is processed into SiHCl3 , then allow SiHCl3In H2Atmosphere
Reduction deposition obtains polysilicon in reduction furnace.The tail gas H of reduction furnace discharge2、SiHCl3、SiCl4、SiH2Cl2 With HCl through excessive
From rear recycling.Silane thermal decomposition process is passed through silane in using polycrystalline silicon seed as the fluidized bed of fluidized particles, and silane is split
It solves and is deposited on crystal seed, to obtain granulated polycrystalline silicon.Improved Siemens and silane thermal decomposition process mainly produce electron level crystal
Silicon can also produce solar-grade polysilicon.Lining can not be used glass substrates as mostly in existing polysilicon membrane preparation
Bottom, it is at high cost, and random degree is higher in crystallization process, technical process and result human controllable's degree are low.
Summary of the invention
The present invention overcomes the deficiencies in the prior art, provide a kind of polysilicon membrane preparation method of solar panel.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of polysilicon membrane preparation method of solar panel, the method the following steps are included:
It is incident on amorphous silicon membrane surface using the high-energy that moment laser pulse generates, only in the depth of film surface layer 100nm thickness
Degree generates thermal energy effect, reaches amorphous silicon membrane not less than 1000 DEG C in moment, to realize amorphous silicon membrane to polysilicon
The transformation of film.
Further technical solution is 15~50ns laser pulse production that the moment laser pulse is laser pulse
Raw energy, the energy that 15~50ns laser pulse of the laser pulse generates are absorbed by amorphous silicon membrane and are converted into phase
Become energy.
Further technical solution is that the substrate of the amorphous silicon membrane uses glass substrates as substrate.
Compared with prior art, the beneficial effects of the present invention are: preparation method of the invention can be made using glass substrate
For substrate, the preparation of p-Si film had not only been realized, but also has been able to satisfy the requirement of LCD and OEL to transparent substrates.Its major advantage is arteries and veins
It is short (15~50ns) to rush width, substrate fever is small.By selecting also to can get mixing crystallization, i.e., polysilicon and amorphous silicon is mixed
It is fit.The polysilicon membrane crystal grain of the method for the present invention preparation is big, spatial selectivity is good, and doping efficiency is high, intracrystalline imperfection is few, electricity
Characteristic is good, mobility is up to 400cm2/v.s。
Specific embodiment
Below with reference to embodiment, the present invention is further elaborated.
Laser crystallization is even more ideal for solid phase crystallization prepares polysilicon, is generated using moment laser pulse
High-energy is incident on amorphous silicon membrane surface, only generates thermal energy effect in the depth of film surface layer 100nm thickness, makes a-Si(amorphous
Silicon) film in moment reaches 1000 DEG C or so, to realize a-Si to p-Si(polysilicon) transformation.In the process, laser
Moment (15~50ns) energy of pulse by a-Si film absorption and is converted into phase-change energy, therefore, does not have excessive thermal energy and passes
Film-substrate is led, the wavelength and power of laser are reasonably selected, a-Si film can be made to reach fusing using laser heating
Temperature and guarantee substrate temperature be lower than 450 DEG C, substrate can be used glass substrates as, both realized the system of p-Si film
It is standby, and it is able to satisfy the requirement of LCD and OEL to transparent substrates.Its major advantage is that pulse width is short (15~50ns), substrate hair
Heat is small.By selecting also to can get mixing crystallization, the i.e. mixture of polysilicon and amorphous silicon.
The mechanism of quasi-molecule laser annealing crystallization: the surface of laser emission to a-Si makes its surface reach fusing point in temperature
When reached crystallization thresholding energy density Ec.A-Si absorbs energy under laser emission, excites unbalanced electronics-sky
Cave pair, increases the conduction energy of free electron, and thermoelectron-hole is incited somebody to action with radiationless compound approach in thermalization time
The energy of oneself is transmitted to lattice, and nearly surface layer is caused extremely rapidly to be heated up, since amorphous silicon material has a large amount of gap state and depth
Energy level, radiationless transition are main recombination processes, thus photothermal conversion efficiency with higher, if the energy density of laser reaches
When to thresholding energy density Ec, i.e., semiconductor is heated to melting temperature, and the surface of film can melt, and the forward position of fusing can be with about
The speed of 10m/s gos deep into material internal, and by laser irradiation, film forms the melting layer of certain depth, and after stopping irradiation, melting layer is opened
Begin cooling with the speed of 108-1010K/s, and the interface between solid phase and liquid phase will return to surface with the speed of 1-2m/s, it is cooling
Rear film crystallization be polycrystalline, with the increase of laser energy density, the size of crystal grain increases, when noncrystal membrane is completely melt
When, film crystallization is crystallite or polycrystalline, if laser energy density is less than thresholding energy density Ec, that is, the energy absorbed is not enough to
Surface temperature is set to rise to fusing point, then crystallization does not occur for film.Under normal circumstances, energy density increases, and crystal grain increases, and film moves
Shifting rate increases accordingly, and when Si film is close to when all fusings, crystal grain is maximum.But the limitation of energy stimulated light device, cannot infinitely increase,
Too big energy density enables mobility decline instead.Optical maser wavelength influences also very greatly crystal effect, and wavelength is longer, laser energy
Injection Si film is deeper, and crystal effect is better.The polysilicon membrane crystal grain of the present embodiment method preparation is big, spatial selectivity is good,
Doping efficiency is high, intracrystalline imperfection is few, electrology characteristic is good, mobility is up to 400cm2/v.s.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (3)
1. a kind of polysilicon membrane preparation method of solar panel, it is characterised in that: the method the following steps are included:
It is incident on amorphous silicon membrane surface using the high-energy that moment laser pulse generates, only in the depth of film surface layer 100nm thickness
Degree generates thermal energy effect, reaches amorphous silicon membrane not less than 1000 DEG C in moment, to realize amorphous silicon membrane to polysilicon
The transformation of film.
2. the polysilicon membrane preparation method of solar panel according to claim 1, it is characterised in that the wink
Between laser pulse be laser pulse 15~50ns laser pulse generate energy, 15~50ns laser of the laser pulse
The energy that pulse generates is absorbed by amorphous silicon membrane and is converted into phase-change energy.
3. the polysilicon membrane preparation method of solar panel according to claim 1, it is characterised in that described is non-
The substrate of polycrystal silicon film uses glass substrates as substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710402180.XA CN108987526A (en) | 2017-06-01 | 2017-06-01 | The polysilicon membrane preparation method of solar panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710402180.XA CN108987526A (en) | 2017-06-01 | 2017-06-01 | The polysilicon membrane preparation method of solar panel |
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| Publication Number | Publication Date |
|---|---|
| CN108987526A true CN108987526A (en) | 2018-12-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201710402180.XA Pending CN108987526A (en) | 2017-06-01 | 2017-06-01 | The polysilicon membrane preparation method of solar panel |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582466A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Polycrystalline silicon film solar cell |
| CN103219230A (en) * | 2013-04-19 | 2013-07-24 | 京东方科技集团股份有限公司 | Manufacturing method of low temperature polysilicon, low temperature polysilicon thin film and thin film transistor |
| CN104392913A (en) * | 2014-10-10 | 2015-03-04 | 京东方科技集团股份有限公司 | Quasi molecule laser annealing apparatus and preparation method of low-temperature polysilicon thin film |
| CN104956466A (en) * | 2012-12-31 | 2015-09-30 | 恩耐激光技术有限公司 | Short pulse fiber laser for LTPS crystallization |
-
2017
- 2017-06-01 CN CN201710402180.XA patent/CN108987526A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582466A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Polycrystalline silicon film solar cell |
| CN104956466A (en) * | 2012-12-31 | 2015-09-30 | 恩耐激光技术有限公司 | Short pulse fiber laser for LTPS crystallization |
| CN103219230A (en) * | 2013-04-19 | 2013-07-24 | 京东方科技集团股份有限公司 | Manufacturing method of low temperature polysilicon, low temperature polysilicon thin film and thin film transistor |
| CN104392913A (en) * | 2014-10-10 | 2015-03-04 | 京东方科技集团股份有限公司 | Quasi molecule laser annealing apparatus and preparation method of low-temperature polysilicon thin film |
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Application publication date: 20181211 |