CN108987383A - GaAs base visualizes Terahertz and detects display chip - Google Patents
GaAs base visualizes Terahertz and detects display chip Download PDFInfo
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- CN108987383A CN108987383A CN201810554297.4A CN201810554297A CN108987383A CN 108987383 A CN108987383 A CN 108987383A CN 201810554297 A CN201810554297 A CN 201810554297A CN 108987383 A CN108987383 A CN 108987383A
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- Prior art keywords
- gaas
- terahertz
- detector diode
- gaas base
- display chip
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 64
- 238000012800 visualization Methods 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000003760 hair shine Effects 0.000 abstract description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 42
- 230000003287 optical effect Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Led Device Packages (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Abstract
The invention discloses a kind of GaAs base visualization Terahertzs to detect display chip, is related to THz wave technology field.The display chip includes GaAs Schottky detector diode, DC detecting control output circuit and GaAs base LED, and the output end of the GaAs Schottky detector diode is connect with the input terminal of DC detecting control output circuit；The output end of the DC detecting control output circuit is connect with the input terminal of the GaAs base LED, the GaAs base LED judges the intensity size of terahertz signal by observing the power that the GaAs base LED shines for being lighted according to the electric current that GaAs Schottky detector diode exports.The detection and display of Terahertz may be implemented in the chip, and homogeneity may be implemented and integrate, integrated level is high, and simple process, one single chip size are small, it can be achieved that array.
Description
Technical field
The present invention relates to THz wave technology field more particularly to a kind of GaAs base visualization Terahertz detection display cores
Piece.
Background technique
Terahertz (THz) wave refers to electromagnetic wave of the frequency within the scope of 0.3THz-3THz, the THz wave frequency of broad sense
Refer to 100GHz to 10THz, wherein 1THz=1000GHz.THz wave occupies very special position, THz skill in electromagnetic spectrum
Art is a generally acknowledged very important intersection Disciplinary Frontiers of International Technology circle.
Since Terahertz frequency range is in microwave to one section of electromagnetic frequency between infrared optics, in infrared optical frequencies, especially
It is near-infrared optical frequency range, except Terahertz and the infrared range for being in human eye perception, human eye cannot judge too
Hertz wave and infrared waves whether there is, if allowing to become the frequency of human eye impression by band shifting or other methods
Rate range is a kind of very direct Visual retrieval means.In infrared optics frequency range, there is IR fluorescence piece, when infrared optical frequencies
Electromagnetic wave irradiation on flourescent sheet, can issue allow human eye perceive feux rouges, such people it may determine that infrared light whether
Have, and can simply judge the size of infrared optical power by the power of fluorescence signal.In Terahertz frequency range, due to Terahertz
Particularity of the frequency range in electromagnetic spectrum, there has been no the functions that similar IR fluorescence piece directly may be implemented.Although to Terahertz
The directly detection of wave is more difficult, but passes through development in recent years, the Terahertz HF schottky diode based on GaAs base
The detection to terahertz signal can be achieved, that is, common detector diode, the function of detector diode are exactly to utilize Xiao Te
The positive of based diode is opened, and terahertz signal is become direct current signal by the characteristic reversely ended.
Summary of the invention
The technical problem to be solved by the present invention is to how provide a kind of detection that Terahertz may be implemented and display
GaAs base visualizes Terahertz and detects display chip.
In order to solve the above technical problems, the technical solution used in the present invention is: a kind of GaAs base visualization Terahertz inspection
Survey display chip, it is characterised in that: including GaAs Schottky detector diode, DC detecting control output circuit and GaAs base
The output end of LED, the GaAs Schottky detector diode are connect with the input terminal of DC detecting control output circuit, institute
GaAs Schottky detector diode is stated for detecting THz wave, Terahertz is responded, while by Terahertz high-frequency signal
Be converted to direct current signal；The output end of the DC detecting control output circuit is connect with the input terminal of the GaAs base LED, institute
State DC detecting control output circuit be used for the direct current signal that the GaAs Schottky detector diode export carry out detection with
Control, the GaAs base LED according to the electric current that GaAs Schottky detector diode exports for being lighted, by described in observation
The power that GaAs base LED shines judges the intensity size of terahertz signal.
A further technical solution lies in: the display chip further includes flat plane antenna, and the flat plane antenna is located at described
On GaAs Schottky detector diode, for improving the aggregate capabilities to THz wave, and two pole of GaAs Schottky detection is improved
The direct current signal of pipe output.
A further technical solution lies in: the display chip further includes high resistant Si lens, and the high resistant Si lens are located at
Before the flat plane antenna, for converging the THz wave dissipated in the air to flat plane antenna.
The beneficial effects of adopting the technical scheme are that when THz wave is radiated on the detection display chip
When, GaAs base detection Schottky diode perceives the presence of THz wave, the d. c. voltage signal generated to Terahertz response
The GaAs base LED chip of rear end is inputed to, LED chip is issued by the size of the direct current signal of perception GaAs detector diode
Equal light does not realize the detection and display of Terahertz by the combination of the two to intensity.
Display chip of the present invention, the form made of array can make pixel according to the size of application scenarios
The detection display chip to differ in size.GaAs Schottky detector diode and GaAs base LED junction are closed in the invention
Together, the direct detection display to THz wave is realized.The display chip may be implemented homogeneity and integrate, and integrated level is high.By
In being all the material system for using GaAs base, it is integrated that homogeneity may be implemented.Simple process: two pole of GaAs base schottky detection at present
The technique of pipe and GaAs base LED are mature, the two can organically be integrated.One single chip size it is small, it can be achieved that
Array: due to realizing using semiconductor technology, display technology can be designed using array.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the functional block diagram that display chip is detected described in the embodiment of the present invention；
Wherein: 1, GaAs Schottky detector diode 2, DC detecting control output circuit 3, GaAs base LED 4, flat plane antenna 5,
High resistant Si lens.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
As shown in Figure 1, the embodiment of the invention discloses a kind of GaAs base visualization Terahertzs to detect display chip, feature
It is: including GaAs Schottky detector diode 1, DC detecting control output circuit 2 and GaAs base LED3.Xiao GaAs
The output end of special base detector diode 1 is connect with the input terminal of DC detecting control output circuit 2, the GaAs Schottky
Detector diode 1 responds Terahertz, while Terahertz high-frequency signal is converted to direct current letter for detecting THz wave
Number；The output end of the DC detecting control output circuit 2 is connect with the input terminal of the GaAs base LED 3, the direct current inspection
The direct current signal that observing and controlling output circuit 2 is used to export the GaAs Schottky detector diode 1 detects and controls, institute
GaAs base LED 3 is stated for being lighted according to the electric current that GaAs Schottky detector diode 1 exports, by observing the GaAs
The power that base LED 3 shines judges the intensity size of terahertz signal.
In actual application, GaAs based schottky diode detects THz wave, responds to Terahertz, simultaneously
Terahertz high-frequency signal is converted into direct current signal, direct current signal is inputted into GaAs base LED, and LED chip shines, due to its sending
Light be visible light, therefore human eye can perceive, and then can decide whether terahertz signal incidence.It simultaneously can be according to hair
The intensity size of the weak judgement terahertz signal of light intensity.
In actual application, it is integrated can be designed according to the frequency of Terahertz frequency range to be measured for corresponding flat plane antenna 4
On GaAs Schottky detector diode 1, for improving the aggregate capabilities to THz wave, and the direct current signal of output is improved.
In actual application, the installation high resistant silicon lens 5 before flat plane antenna can be used, for converging aerial diverging
THz wave.
Since GaAs Schottky detector diode and GaAs base LED technique are mature, difficulty is had no in technique.?
In manufacturing process, the two needs the size using same wafer size, after respectively technique is realized, by way of being thinned,
The substrate of two chip dies is carried out to be thinned to 50 microns and its following thickness, then by way of wafer bonding, is realized
The connection of two chip wafers thereby realizes Schottky detector diode and the connection of LED.
In the actual process, the direct current signal that can be exported using control circuit to Schottky detector diode is detected
And amplify, detectivity is further promoted, the LED of rear end is made to issue stronger light.
To sum up, the present invention mainly gives a kind of GaAs base visualization Terahertz detection display chip, and simple process can
Row, integrated level are high, and can array, may be implemented to show the Visual retrieval of THz wave.
Claims (3)
1. a kind of GaAs base visualization Terahertz detects display chip, it is characterised in that: including GaAs Schottky detector diode
(1), DC detecting control output circuit (2) and GaAs base LED(3), the output of the GaAs Schottky detector diode (1)
It holds and is connect with the input terminal of DC detecting control output circuit (2), the GaAs Schottky detector diode (1) is for visiting
THz wave is surveyed, Terahertz is responded, while Terahertz high-frequency signal is converted into direct current signal；The DC detecting control
The output end of output circuit (2) processed is connect with the input terminal of the GaAs base LED(3), and the DC detecting controls output circuit
(2) direct current signal for exporting to the GaAs Schottky detector diode (1) detects and controls, the GaAs base
LED(3) for being lighted according to the electric current that GaAs Schottky detector diode (1) exports, by observing the GaAs base LED
(3) luminous power judges the intensity size of terahertz signal.
2. GaAs base visualization Terahertz as described in claim 1 detects display chip, it is characterised in that: the display chip
It further include flat plane antenna (4), the flat plane antenna (4) is located on the GaAs Schottky detector diode (1), for raising pair
The aggregate capabilities of THz wave, and improve the direct current signal of GaAs Schottky detector diode (1) output.
3. GaAs base visualization Terahertz as claimed in claim 2 detects display chip, it is characterised in that: the display chip
It further include high resistant Si lens (5), the high resistant Si lens (5) are located at before the flat plane antenna, dissipate in the air for converging
THz wave is to flat plane antenna (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810554297.4A CN108987383A (en) | 2018-06-01 | 2018-06-01 | GaAs base visualizes Terahertz and detects display chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810554297.4A CN108987383A (en) | 2018-06-01 | 2018-06-01 | GaAs base visualizes Terahertz and detects display chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108987383A true CN108987383A (en) | 2018-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810554297.4A Pending CN108987383A (en) | 2018-06-01 | 2018-06-01 | GaAs base visualizes Terahertz and detects display chip |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050083567A1 (en) * | 2003-10-15 | 2005-04-21 | National Research Council Of Canada | Wavelength conversion device with avalanche multiplier |
| CN101377462A (en) * | 2008-09-18 | 2009-03-04 | 阮双琛 | THz wave detector, detecting system and method |
| CN102832289A (en) * | 2012-08-13 | 2012-12-19 | 上海交通大学 | Terahertz imaging device based on photon frequency up-conversion, and conversion method |
| CN103178150A (en) * | 2013-03-13 | 2013-06-26 | 上海交通大学 | Antenna coupling terahertz detector |
| CN104596641A (en) * | 2015-01-21 | 2015-05-06 | 中国科学院半导体研究所 | Terahertz wave detector |
| CN207321529U (en) * | 2017-11-03 | 2018-05-04 | 金如利 | Acoustical signal instruction device and system |
| CN108007566A (en) * | 2017-12-29 | 2018-05-08 | 同方威视技术股份有限公司 | Terahertz detector |
-
2018
- 2018-06-01 CN CN201810554297.4A patent/CN108987383A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050083567A1 (en) * | 2003-10-15 | 2005-04-21 | National Research Council Of Canada | Wavelength conversion device with avalanche multiplier |
| CN101377462A (en) * | 2008-09-18 | 2009-03-04 | 阮双琛 | THz wave detector, detecting system and method |
| CN102832289A (en) * | 2012-08-13 | 2012-12-19 | 上海交通大学 | Terahertz imaging device based on photon frequency up-conversion, and conversion method |
| CN103178150A (en) * | 2013-03-13 | 2013-06-26 | 上海交通大学 | Antenna coupling terahertz detector |
| CN104596641A (en) * | 2015-01-21 | 2015-05-06 | 中国科学院半导体研究所 | Terahertz wave detector |
| CN207321529U (en) * | 2017-11-03 | 2018-05-04 | 金如利 | Acoustical signal instruction device and system |
| CN108007566A (en) * | 2017-12-29 | 2018-05-08 | 同方威视技术股份有限公司 | Terahertz detector |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181211 |
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| RJ01 | Rejection of invention patent application after publication |