CN108987286A - A kind of ameliorative way of LTCC cofiring mismatch - Google Patents
A kind of ameliorative way of LTCC cofiring mismatch Download PDFInfo
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- CN108987286A CN108987286A CN201810696582.XA CN201810696582A CN108987286A CN 108987286 A CN108987286 A CN 108987286A CN 201810696582 A CN201810696582 A CN 201810696582A CN 108987286 A CN108987286 A CN 108987286A
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- ltcc
- cofiring
- mismatch
- heating rate
- ameliorative way
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- 238000005245 sintering Methods 0.000 claims abstract description 44
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 239000002002 slurry Substances 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 2
- 230000008602 contraction Effects 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 10
- 230000006872 improvement Effects 0.000 description 4
- 238000000280 densification Methods 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The present invention provides a kind of ameliorative way of LTCC cofiring mismatch, during this method includes the cofiring in LTCC ceramic body and inner layer conductive slurry, when sintering temperature reaches the rapid desufflation temperature range of the inner layer conductive slurry, improve heating rate, after sintering temperature is more than the rapid desufflation temperature range of the electrocondution slurry, restore conventional heating rate.The ameliorative way of the LTCC cofiring mismatch is not under the premise of influencing product sintered density, largely improve the contraction matching problem between conductive metal layer and substrate, so that the range of selection broadens, the reliability of ltcc substrate and function element is also substantially increased, realizes superior electrical property.
Description
Technical field
The present invention relates to ceramic material preparation method technical field more particularly to a kind of improvement sides of LTCC cofiring mismatch
Method.
Background technique
LTCC technology is one of the integrated packaging technology of current mainstream, has many merits, utilizes LTCC technology preparation
Electronic component has many advantages, such as highly reliable, high-performance, high frequency, be realize current electronic building brick to micromation, lightweight and
The important means that integrated equal directions are developed, has had been more and more widely used.
But LTCC is there is also the difficult point of reliability is related to simultaneously, such as LTCC ceramic body and receipts when inner layer conductive slurry cofiring
Shrinkage is one of significant challenge, it is related to the quality of multiple-layer metallization wiring.When LTCC cofiring, ceramic body with lead
The temperature that the sintering characteristic mismatch of plasma-based material is mainly reflected in sintering densification completion is different;The sintering of substrate and slurry is received
Shrinkage is inconsistent;Speed mismatch of sintering densification etc..These mismatches are easy to cause firing metacoxal plate surface irregularity, stick up
Bent, layering, there are also the adhesive force of metal line declines etc..The consistent ceramic body of maximum collapse can be used in practice and lead
Plasma-based, but often the speed of the two sintering densification mismatches, and contraction rate has certain difference, if be routinely sintered, just
Will cause sintering after porcelain body be not combined together well with inner layer metal conductive layer, between have biggish gap.
This is for the function element or functional base plate of some high frequencies, and there are gap, being equivalent to makes entirely to produce for metal layer and ceramic body
The structure of product is changed, can be huge on the influence of its electrical property, if the Insertion Loss of filter increases, standing-wave ratio variation etc..
In consideration of it, providing a kind of ameliorative way of LTCC cofiring mismatch, solves LTCC ceramic body and inner layer conductive slurry is burnt
During knot the temperature spot that starts to shrink and the unmatched problem of contraction rate be it is current there is an urgent need to.
Summary of the invention
The present invention aiming at the problems existing in the prior art, provides a kind of ameliorative way of LTCC cofiring mismatch, this method
It can be under the premise of influencing product sintered density, the contraction matching significantly improved between conductive metal layer and substrate is asked
Topic, so that the range of selection broadens, also greatly improves the reliability of ltcc substrate and function element, realizes superior electrical property
Energy.
To achieve the above object, technical solution provided by the invention is as follows:
A kind of ameliorative way of LTCC cofiring mismatch, the cofiring process in LTCC ceramic body and inner layer conductive slurry
In, when sintering temperature reaches the rapid desufflation temperature range of the inner layer conductive slurry, heating rate is improved, sintering temperature is worked as
After the rapid desufflation temperature range of the electrocondution slurry, restore conventional heating rate.
Further, when sintering temperature be current environmental temperature to 500 ° of sections when, control heating rate is 1 DEG C/min.
Further, when sintering temperature be 500 ° to 600 ° of sections when, control heating rate is 3.5 DEG C/min.
Further, when sintering temperature be 600 ° to 750 ° of sections when, control heating rate is 5 DEG C/min.
Further, when sintering temperature be 750 ° to 870 ° of sections when, control heating rate is 3.5/min.
The present invention provides a kind of ameliorative way of LTCC cofiring mismatch, and this method is by starting rapid desufflation in electrocondution slurry
On temperature section, faster heating rate is set, shorten the time of electrocondution slurry rapid desufflation phase, while accelerating to reach ceramic body fast
Fast shrinkage temperature point, restores conventional heating rate again later, in this way, can ensure the case where not influencing ceramic body compactness
Under, realize the improvement of LTCC ceramic body and inner layer conductive slurry cofiring mismatch ratio, porcelain body and metal conducting layer mismatch ratio after sintering
About 7% is reduced, the reliability of product is improved.
Detailed description of the invention
Fig. 1 is the flow chart of the embodiment of the ameliorative way of LTCC cofiring mismatch of the invention;
Heating rate setting and sintering finished figure of the Fig. 2 for the ameliorative way experiment 1 of LTCC cofiring mismatch of the invention;
Heating rate setting and sintering finished figure of the Fig. 3 for the ameliorative way experiment 2 of LTCC cofiring mismatch of the invention;
Heating rate setting and sintering finished figure of the Fig. 4 for the ameliorative way experiment 3 of LTCC cofiring mismatch of the invention;
Heating rate setting and sintering finished figure of the Fig. 5 for the ameliorative way experiment 4 of LTCC cofiring mismatch of the invention;
Fig. 6 is the structural schematic diagram of the LTCC ceramic body of the embodiment of the ameliorative way of LTCC cofiring mismatch of the invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is not intended to limit the scope of the invention for illustrating the present invention.
The present invention provides a kind of ameliorative way of LTCC cofiring mismatch, and the method includes in LTCC ceramic body and internal layer
During the cofiring of electrocondution slurry, when sintering temperature reaches the rapid desufflation temperature range of the inner layer conductive slurry, improve
Heating rate restores conventional heating rate after sintering temperature is more than the rapid desufflation temperature range of the electrocondution slurry.
It is one embodiment of the ameliorative way of LTCC cofiring mismatch of the invention, the LTCC cofiring with reference to Fig. 1 and Fig. 6
The ameliorative way of mismatch includes:
S100, when sintering temperature be current environmental temperature to 500 ° of sections when, control heating rate is 1 DEG C/min.
S200, when sintering temperature be 500 ° to 600 ° of sections when, control heating rate is 3.5 DEG C/min.
S300, when sintering temperature be 600 ° to 750 ° of sections when, control heating rate is 5 DEG C/min.
S400, when sintering temperature be 750 ° to 870 ° of sections when, control heating rate is 3.5/min.
The maximum collapse temperature of LTCC ceramic body and inner layer conductive slurry is close;Electrocondution slurry contraction start temperature is lower,
Electrocondution slurry shrinks behavior first during cofiring;In 600~700 DEG C of temperature range electrocondution slurry rapid desufflations, ceramics
Body is then in contraction initial stage, this temperature section is rapidly heated rate:5~10 DEG C/min;Restore slowly to rise when >=700 DEG C
Temperature.
Ceramic body characteristic temperature: about 600 DEG C of glass transition temperature Tg, about 705 DEG C of flow temperature Tf, cut-off temperature is shunk
About 900 DEG C of Ts of degree, longitudinal contraction rate Δ Z/Z~17.35%;
Electrocondution slurry characteristic temperature: about 520 DEG C of glass transition temperature Tg, about 614 DEG C of flow temperature Tf, cut-off is shunk
About 950 DEG C of temperature Ts, longitudinal contraction rate Δ Z/Z~4.64%;
Experimental data
With reference to Fig. 2, experiment 1, normal sintering: 1# sample, sintering furnace is 1.;
RT-500 DEG C, 1 DEG C/min of rate;
500-870 DEG C, 3.5 DEG C/min. of rate
With reference to Fig. 3, test 2,5 DEG C/min sintering: 2# sample, sintering furnace is 1.;
RT-500 DEG C, 1 DEG C/min of rate;
500-600 DEG C, 3.5 DEG C/min of rate;
600-750 DEG C, 5 DEG C/min of rate;
750-870 DEG C, rate 3.5/min.
Comparative experiments 1 and experiment 2 are sintered under same sintering furnace using control heating rate, and sintering finished is flat
Equal mismatch ratio is reduced to 10.502% by 17.736%.
With reference to Fig. 4, experiment 3, normal sintering: 3# sample, sintering furnace is 2.;
RT-500 DEG C, 1 DEG C/min of rate;
500-870 DEG C, 3.5 DEG C/min. of rate
With reference to Fig. 5, test 4,5 DEG C/min sintering: 4# sample, sintering furnace is 2.;
RT-500 DEG C, 1 DEG C/min of rate;
500-600 DEG C, 3.5 DEG C/min of rate;
600-750 DEG C, 8 DEG C/min of rate;
750-870 DEG C, rate 3.5/min.
Comparative experiments 3 and experiment 4 are sintered under same sintering furnace using control heating rate, and sintering finished is flat
Equal mismatch ratio is reduced to 14.475% by 21.136%.
The present invention provides a kind of ameliorative way of LTCC cofiring mismatch, and this method is by starting rapid desufflation in electrocondution slurry
On temperature section, faster heating rate is set, shorten the time of electrocondution slurry rapid desufflation phase, while accelerating to reach ceramic body fast
Fast shrinkage temperature point, restores conventional heating rate again later, in this way, can ensure the case where not influencing ceramic body compactness
Under, realize the improvement of LTCC ceramic body and inner layer conductive slurry cofiring mismatch ratio, porcelain body and metal conducting layer mismatch ratio after sintering
About 7% is reduced, the reliability of product is improved.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to restrict the invention, it is all in spirit of the invention and
In principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (5)
1. a kind of ameliorative way of LTCC cofiring mismatch, which is characterized in that the method includes leading in LTCC ceramic body with internal layer
During the cofiring of plasma-based material, when sintering temperature reaches the rapid desufflation temperature range of the inner layer conductive slurry, improves and rise
Warm rate restores conventional heating rate after sintering temperature is more than the rapid desufflation temperature range of the electrocondution slurry.
2. the ameliorative way of LTCC cofiring mismatch according to claim 1, which is characterized in that when sintering temperature is to work as front ring
When border temperature is to 500 ° of sections, control heating rate is 1 DEG C/min.
3. the ameliorative way of LTCC cofiring mismatch according to claim 2, which is characterized in that arrived when sintering temperature is 500 °
When 600 ° of sections, control heating rate is 3.5 DEG C/min.
4. the ameliorative way of LTCC cofiring mismatch according to claim 3, which is characterized in that arrived when sintering temperature is 600 °
When 750 ° of sections, control heating rate is 5 DEG C/min.
5. the ameliorative way of LTCC cofiring mismatch according to claim 4, which is characterized in that arrived when sintering temperature is 750 °
When 870 ° of sections, control heating rate is 3.5/min.
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Citations (6)
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CN1394113A (en) * | 2001-06-05 | 2003-01-29 | 株式会社村田制作所 | Method for mfg. glass ceramic multi-substrate and glass ceramic multi-substrate |
US20030211931A1 (en) * | 2002-05-13 | 2003-11-13 | Hyun-Jai Kim | Low temperature co-firing ceramic (LTCC) composition for microwave frequency |
CN102013320A (en) * | 2010-10-22 | 2011-04-13 | 广东风华高新科技股份有限公司 | Single-layer capacitor and preparation method thereof |
CN103050281A (en) * | 2011-10-12 | 2013-04-17 | 李文熙 | Shrinkage sintering inhibition for improving electrode continuity of multilayer ceramic assembly |
CN103137326A (en) * | 2011-12-01 | 2013-06-05 | 李文熙 | Electronic component and manufacturing method thereof |
CN109250920A (en) * | 2018-09-19 | 2019-01-22 | 深圳市晶特智造科技有限公司 | A kind of low-temperature co-burning ceramic material and preparation method thereof |
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2018
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CN1394113A (en) * | 2001-06-05 | 2003-01-29 | 株式会社村田制作所 | Method for mfg. glass ceramic multi-substrate and glass ceramic multi-substrate |
US20030211931A1 (en) * | 2002-05-13 | 2003-11-13 | Hyun-Jai Kim | Low temperature co-firing ceramic (LTCC) composition for microwave frequency |
CN102013320A (en) * | 2010-10-22 | 2011-04-13 | 广东风华高新科技股份有限公司 | Single-layer capacitor and preparation method thereof |
CN103050281A (en) * | 2011-10-12 | 2013-04-17 | 李文熙 | Shrinkage sintering inhibition for improving electrode continuity of multilayer ceramic assembly |
CN103137326A (en) * | 2011-12-01 | 2013-06-05 | 李文熙 | Electronic component and manufacturing method thereof |
CN109250920A (en) * | 2018-09-19 | 2019-01-22 | 深圳市晶特智造科技有限公司 | A kind of low-temperature co-burning ceramic material and preparation method thereof |
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Effective date of registration: 20230801 Address after: 5th Floor, Building 6, Fenghua Electronics Industrial Park, No. 18 Fenghua Road, Duanzhou District, Zhaoqing City, Guangdong Province, 526000 Patentee after: Guangdong Fenghua Special New Materials Co.,Ltd. Address before: Fenghua Electronic Industry City, No.18 Fenghua Road, Zhaoqing City, Guangdong Province Patentee before: Guangdong Fenghua Advanced Technology Holding Co.,Ltd. |
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