CN108983490A - Quantum dot diaphragm, backlight module and display device - Google Patents
Quantum dot diaphragm, backlight module and display device Download PDFInfo
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- CN108983490A CN108983490A CN201810724710.7A CN201810724710A CN108983490A CN 108983490 A CN108983490 A CN 108983490A CN 201810724710 A CN201810724710 A CN 201810724710A CN 108983490 A CN108983490 A CN 108983490A
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- layer
- quantum dot
- scattering
- dot diaphragm
- diaphragm
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Planar Illumination Modules (AREA)
Abstract
The invention discloses a kind of quantum dot diaphragm, the quantum dot diaphragm includes: quantum dot layer, including first surface and second surface, and the first surface is for receiving incident light, and the second surface is for issuing emergent light；And scattering layer, the first surface of the quantum dot layer is set, the incident light enters the quantum dot layer after Rayleigh scattering occurs by the scattering layer, and the invention also discloses a kind of backlight module and display devices, to improve quantum dot diaphragm applied to optical problem present in backlight product.
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of quantum dot diaphragm, backlight module and display device.
Background technique
QD Film (Quantum Dot Film, quantum dot film) is added in LCD backlight realizes the full display of high color,
It has been technology common in the market.However during the QD backlight design of market, some previous white light LEDs are inevitably faced
The no optical problem of backlight, comprising: in side backlight, at non-light incidence side LGP (Light Guide Plate, light guide plate)
Visible obviously turn blue (edge indigo plant is dizzy) in edge；In direct-type backlight (LED+2nd lens scheme), it is especially smaller in OD and
And LED quantity it is few when, it is partially blue right above discovery LED, and other regions are relatively partially yellow.
Problem above annoyings backlight design dealer, although relevant issues have preferable solution, such as side
The formula machine edge problem of turning blue in side generallys use fringe region reflector plate process yellow site (or fluorescent powder), or in marginal zone
One layer of QD phosphor strip is added in domain again, can effectively improve the problem using similar scheme, however scheme corresponds to different back
When light size, especially different LGP thickness, particular problem is needed to make a concrete analysis of.
Cause side type machine scheme edge to turn blue main cause for the difference of edge optical path and intermediate region optical path, such as schemes
Shown in 1, light source S is in the left side of light guide plate 1, and in low-beam region A, incident ray a through site 2 on LGP scatters light light type tool at this time
There is apparent inclination angle theta (being biased to distance light side), and in high-beam region B, the anti-layer 3 of the attached silver of 1 lateral boundaries face paste of light guide plate, simultaneously at this time
There are incident ray b to scatter light through site 2 on LGP again through the anti-reflection of layer 3 of the silver, is similar to bilateral at this time and enters light, through net
Point 2 scatters light light type, and there is no apparent inclination angles.This two kinds go out light light type characteristic, cause it to conventional amounts as shown in Figure 2
Son point diaphragm (including quantum dot layer 21, and it is cascadingly set on the barrier layer 22 and substrate layer 23 of the quantum dot layer 21) in
The excitation degree of quantum dot is different in quantum dot layer 21, and fringe region excites degree obviously weaker, causes RG (red green) ratio low,
It is partially blue that whole light color compares middle position.
Summary of the invention
It, can be with the invention mainly solves the technical problem of providing a kind of quantum dot diaphragm, backlight module and display device
Quantum dot diaphragm is effectively improved applied to optical problem present in backlight product.
In order to solve the above technical problems, one technical scheme adopted by the invention is that:
A kind of quantum dot diaphragm is provided, comprising:
Quantum dot layer, including first surface and second surface, the first surface is for receiving incident light, second table
Face is for issuing emergent light；And
Scattering layer, is arranged in the first surface of the quantum dot layer, and by the scattering layer Rayleigh occurs for the incident light
Enter the quantum dot layer after scattering.
In order to solve the above technical problems, another technical solution used in the present invention is:
A kind of backlight module is provided, the backlight module includes above-mentioned quantum dot diaphragm.
In order to solve the above technical problems, another technical solution used in the present invention is:
A kind of display device is provided, the display device includes above-mentioned backlight module.
The beneficial effects of the present invention are: being in contrast to the prior art, the present invention passes through the first table in quantum dot layer
Scattering layer is arranged in face, and incident light enters the quantum dot layer after Rayleigh scattering occurs by the scattering layer, and the incident light is again
It is projected by the second surface of the quantum dot layer, the incident light occurs Rayleigh scattering through the scattering layer and makes the incident light
The light light type that goes out become isotropism, it is identical to the excitation degree of the quantum dot layer, and then effectively improve quantum dot diaphragm
Applied to optical problem present in backlight product.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of quantum dot diaphragm in the prior art；
Fig. 2 is the structural schematic diagram of light transmission route in side light source LGP；
Fig. 3 is the structural schematic diagram of quantum dot diaphragm first embodiment of the present invention；
Fig. 4 is the structural schematic diagram of quantum dot diaphragm second embodiment of the present invention；
Fig. 5 is the structural schematic diagram of quantum dot diaphragm 3rd embodiment of the present invention；
Fig. 6 is the structural schematic diagram of quantum dot diaphragm fourth embodiment of the present invention；
Fig. 7 is the structural schematic diagram of backlight module of the present invention；
Fig. 8 is the structural schematic diagram of the display device of that present invention.
Specific embodiment
The present invention will be described in detail with reference to the accompanying drawings and examples.
Referring to Fig. 3, being the structural schematic diagram of quantum dot diaphragm first embodiment of the present invention.The quantum dot diaphragm 10 wraps
It includes:
Quantum dot layer 11, including first surface 111 and second surface 112, the first surface 111 is for receiving incidence
Light, the second surface 112 is for issuing emergent light；And
Scattering layer 12, is arranged in the first surface 111 of the quantum dot layer 11, and the incident light passes through the scattering layer 12
Enter the quantum dot layer 11 after Rayleigh scattering occurs.
Wherein, the quantum dot diaphragm 10 further includes first and second substrate layer 13,14, and the first base material layer 13 is arranged
In the second surface 112 of the quantum dot layer 11, second substrate layer 14 is arranged in the scattering layer 12 far from the quantum
The surface of point layer 11；
Wherein, the quantum dot diaphragm 10 further includes first and second barrier layer 15,16, and first barrier layer 15 is arranged
Between the quantum dot layer 11 and the first base material layer 13, second barrier layer 16 is arranged in the scattering layer 12 and institute
It states between the second substrate layer 14.
Wherein, first and second described substrate layer 13,14 is polyethylene terephthalate, first and second described resistance
Interlayer 15,16 is water oxygen barrier layer, and scattered ion(s) is nanoscale scattered ion(s) in the scattering layer 12.
Since the anti-layer of the silver of side entering type light source and light-guide edge side makes the light light type out of the incident light through the light guide plate
Difference, the different incident light of the light type are sent out by the scattering layer 12 by nanoscale scattered ion(s) in the scattering layer 12 again
Raw Rayleigh scattering enters back into the quantum dot layer 11 so that the incident light is scattered that the light light type that goes out of layer becomes isotropism,
It is identical to the excitation degree of the quantum dot layer 11, it is not in aobvious when the quantum dot diaphragm 10 is applied in backlight product
Show the optical problems such as turn blue.
Referring to Fig. 4, being the structural schematic diagram of quantum dot diaphragm second embodiment of the present invention, with the first embodiment
The difference of (Fig. 3) is: the quantum dot diaphragm 10 further includes cementing layer 17, and setting is in the quantum dot layer 11 and the scattering
Between layer 12.
The quantum dot layer 11 is made of quantum dot and outer layer ligand, by modifying the outer layer ligand, thus it is possible to vary institute
State 11 dissolution characteristics of quantum dot layer (water-soluble or oil-soluble), existing quantum dot manufacturer associated ligands material on Formula Development
It selects, determines that glue material selection is completed.Since cause need to be to the scattering layer 12 for 11 dissolution characteristics of quantum dot layer
Scattered ion(s) centainly selected, cannot dissolve each other with the quantum dot layer 11, existing achievable nanoscale scattering particles is logical
It is often organic filler, part research laboratory can also prepare the inorganic SiO2 material of 20nm or so, gluing described in the present embodiment
Layer 17 separates the quantum dot layer 11 with the scattering layer 12, causes the quantum dot layer to avoid above-mentioned manufacturer's chemical formulation change
The change of 11 dissolution characteristics, to reduce the difficulty in scattering particles selection.Meanwhile the quantum dot layer 11 and the scattering layer
12 have different dissolubilities when, the quantum dot layer 11 is separated with the scattering layer 12 by the cementing layer 17, can be kept away
Exempt from that adhesiveness is bad and other possible chemical reaction problems.
Referring to Fig. 5, being the structural schematic diagram of quantum dot diaphragm 3rd embodiment of the present invention, with the first embodiment
The difference of (Fig. 3) is: first barrier layer 15 is arranged between the quantum dot layer 11 and the first base material layer 13, institute
The second barrier layer 16 is stated to be arranged between the quantum dot layer 11 and the scattering layer 12.
First barrier layer 15 and second barrier layer 16 are respectively arranged at the first surface of the quantum dot layer 11
111 and second surface 112, the quantum dot layer 11 is directly protected, is influenced to avoid quantum dot by water oxygen.
Referring to Fig. 6, being the structural schematic diagram of quantum dot diaphragm fourth embodiment of the present invention, with the 3rd embodiment
The difference of (Fig. 4) is: the quantum dot diaphragm 10 further includes third substrate layer 18, is arranged in second barrier layer 16 and institute
It states between scattering layer 12.
Quantum dot diaphragm (as shown in Figure 2) in compared with the prior art, the quantum dot diaphragm 10 in the present embodiment
Not only Rayleigh scattering can be occurred by nanoscale scattered ion(s) in the scattering layer 12, so that the incident light goes out light light
Type becomes isotropism, enters back into identical to the excitation degree of quantum dot when the quantum dot layer 11, and LGP difference goes out light light at this time
Type no longer influences its excitation degree to quantum dot in the quantum dot layer 11, and then avoids applying in the quantum dot diaphragm 10
Occur display when in backlight product the optical problems such as to turn blue, meanwhile, three substrate layers (first base material layer 13, the second substrate layer 14,
Third substrate layer 18) described in first base material layer 11 and third substrate layer 18 quantum dot layer 11 is protected, also
It states the second substrate layer 14 to protect the scattering layer 12, so that the scattering layer 12 reaches better working effect.
Fig. 7 is the structural schematic diagram of backlight module of the present invention, and the backlight module 20 includes any of the above-described quantum
Diaphragm 10 is put, the other elements and function in the backlight module 20 are identical as existing backlight module, and details are not described herein.
Fig. 8 is the structural schematic diagram of the display device of that present invention, and the display device 100 includes above-mentioned backlight module 20, institute
It states other elements in display device 100 and function is identical as existing display device, details are not described herein.
Wherein, the display device 100 is OLED or LCD.
The present invention is by increasing quantum dot layer in quantum dot diaphragm, so that by the scattering layer Rayleigh occurs for incident light
Enter quantum dot layer, the nanoscale scattered ion(s) in the quantum dot layer after scattering, so that the light light type that goes out of the incident light becomes
It is identical to the quantum dot excitation degree in the quantum dot layer for isotropism, and by controlling the scattering layer in the amount
Position in son point diaphragm goes out light light type anisotropy to meet different-effect, to avoid incident light to the amount afterwards through the light guide plate
It is different that the quantum dot of son point layer causes excitation degree, and then is effectively improved quantum dot diaphragm applied to light present in backlight product
Knowledge topic.
Mode the above is only the implementation of the present invention is not intended to limit the scope of the invention, all to utilize this
Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content, it is relevant to be applied directly or indirectly in other
Technical field is included within the scope of the present invention.
Claims (10)
1. a kind of quantum dot diaphragm characterized by comprising
Quantum dot layer, including first surface and second surface, the first surface are used for receiving incident light, the second surface
In sending emergent light；And
Scattering layer, is arranged in the first surface of the quantum dot layer, and by the scattering layer Rayleigh scattering occurs for the incident light
Enter the quantum dot layer afterwards.
2. quantum dot diaphragm according to claim 1, which is characterized in that the quantum dot diaphragm further includes first and second base
The second surface of the quantum dot layer is arranged in material layer, the first base material layer, and second substrate layer is arranged in the scattering
Surface of the layer far from the quantum dot layer.
3. quantum dot diaphragm according to claim 2, which is characterized in that the quantum dot diaphragm further includes first and second resistance
Interlayer, first barrier layer are arranged between the quantum dot layer and the first base material layer, the second barrier layer setting
Between the scattering layer and second substrate layer.
4. quantum dot diaphragm according to claim 3, which is characterized in that the quantum dot diaphragm further includes cementing layer, setting
Between the quantum dot layer and the scattering layer.
5. quantum dot diaphragm according to claim 2, which is characterized in that the quantum dot diaphragm further includes first and second resistance
Interlayer, first barrier layer are arranged between the quantum dot layer and the first base material layer, the second barrier layer setting
Between the quantum dot layer and the scattering layer.
6. quantum dot diaphragm according to claim 5, which is characterized in that the quantum dot diaphragm further includes third substrate layer,
It is arranged between second barrier layer and the scattering layer.
7. quantum dot diaphragm according to claim 1, which is characterized in that described first to third substrate layer is poly- terephthaldehyde
Sour glycol ester, first and second described barrier layer are water oxygen barrier layer, and scattered ion(s) is nanoscale scattering in the scattering layer
Ion.
8. a kind of backlight module, which is characterized in that the backlight module includes quantum dot film described in any one of claim 1-7
Piece.
9. a kind of display device, which is characterized in that the display device includes backlight module according to any one of claims 8.
10. display device according to claim 9, which is characterized in that the display device is OLED or LCD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810724710.7A CN108983490A (en) | 2018-07-04 | 2018-07-04 | Quantum dot diaphragm, backlight module and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810724710.7A CN108983490A (en) | 2018-07-04 | 2018-07-04 | Quantum dot diaphragm, backlight module and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108983490A true CN108983490A (en) | 2018-12-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810724710.7A Pending CN108983490A (en) | 2018-07-04 | 2018-07-04 | Quantum dot diaphragm, backlight module and display device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571352A (en) * | 2019-08-15 | 2019-12-13 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
| CN111435206A (en) * | 2019-01-14 | 2020-07-21 | 三星显示有限公司 | Display device |
| WO2020181591A1 (en) * | 2019-03-08 | 2020-09-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel manufacturing method, display panel, and electronic device |
| US11043652B2 (en) | 2019-08-15 | 2021-06-22 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel with quantum dot thin film |
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Application publication date: 20181211 |
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