CN108983446B - Light intensity modulator - Google Patents
Light intensity modulator Download PDFInfo
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- CN108983446B CN108983446B CN201710403862.2A CN201710403862A CN108983446B CN 108983446 B CN108983446 B CN 108983446B CN 201710403862 A CN201710403862 A CN 201710403862A CN 108983446 B CN108983446 B CN 108983446B
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- quantum dot
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
Abstract
The invention belongs to the technical field of display application, and provides a light intensity modulator. The invention provides a light intensity modulator, which comprises a first electrode, a planar optical waveguide, a second electrode, an in-coupling module and an out-coupling module, wherein the planar optical waveguide comprises at least one quantum dot layer and at least one dielectric layer which are combined in a laminated manner; meanwhile, the laminated structure of the quantum dot layer and the dielectric layer can effectively improve the regulation and control of the refractive index distribution in the waveguide, thereby reducing the tolerance of the waveguide to a light guide mode and improving the modulation efficiency of light intensity.
Description
Technical Field
The invention belongs to the technical field of display application, and particularly relates to a light intensity modulator.
Background
The optical modulator is a device for adjusting optical wave parameters (such as light intensity, polarization, phase and the like) by using an external signal, is a key device for realizing high-speed and short-distance optical communication, and is also an important integrated optical device. Wherein, the light intensity modulator is used for adjusting the light intensity by using the external signal.
The working principle of the existing waveguide type light intensity modulator controlled by an external electric field is as follows: under the condition of not applying an external electric field, the light guide is in a normal guided mode state, and the out-coupling section receives constant output; when an external electric field parallel to the section of the waveguide is applied to a certain section of the waveguide, the optical constants of materials in the waveguide change (electroabsorption) due to the external electric field, and when the change of the optical constants is obvious, the waveguide is no longer in a guided mode state, and the light intensity received by the out-coupling section is greatly reduced. This will achieve the effect of modulating the light intensity with an external voltage (field), which acts as a switch for the transmission of light waves. However, the electro-absorption efficiency of the material in the waveguide of the existing light intensity modulator is generally low, so the modulation efficiency of the modulator is generally low, and effective modulation of the light intensity is difficult to achieve.
Therefore, the conventional light intensity modulator has the problems that the modulation efficiency is low and the effective modulation of the light intensity is difficult to realize due to the low electro-absorption efficiency of the material in the waveguide.
Disclosure of Invention
The invention aims to provide a light intensity modulator, and aims to solve the problems that the existing light intensity modulator is low in modulation efficiency and is difficult to realize effective modulation of light intensity.
The present invention provides an optical intensity modulator, comprising:
the planar optical waveguide comprises a planar optical waveguide, a first electrode, a second electrode, an in-coupling module and an out-coupling module;
the planar optical waveguide is arranged between the first electrode and the second electrode, the in-coupling module and the out-coupling module are simultaneously arranged on the surface of the planar optical waveguide provided with the first electrode, and the in-coupling module and the out-coupling module are separately arranged on two sides of the first electrode;
the planar optical waveguide comprises at least one quantum dot layer and at least one dielectric layer which are combined in a laminated mode, and the quantum dot layer and the dielectric layer are not parallel to the electric field direction of an electric field between the first electrode and the second electrode.
The light intensity modulator provided by the invention comprises a first electrode, a planar optical waveguide, a second electrode, an in-coupling module and an out-coupling module, wherein the planar optical waveguide comprises at least one quantum dot layer and at least one dielectric layer, and the electro-absorption efficiency of a quantum dot material in the quantum dot layer is higher than that of a bulk material of the same material by more than one order of magnitude, so that the electro-absorption efficiency of the light intensity modulator is greatly improved; meanwhile, the laminated structure of the quantum dot layer and the dielectric layer can effectively improve the regulation and control of the refractive index distribution in the waveguide, thereby reducing the tolerance of the waveguide to a light guide mode and improving the modulation efficiency of light intensity.
Drawings
FIG. 1 is a schematic diagram of an optical intensity modulator according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a planar optical waveguide and a corresponding thickness-refractive index distribution diagram according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 1, an embodiment of the invention provides an optical intensity modulator, which includes a planar optical waveguide 1, a first electrode 2, a second electrode 3, an incoupling module 4, and an outcoupling module 5.
The planar optical waveguide 1 is arranged between a first electrode 2 and a second electrode 3, the in-coupling module 4 and the out-coupling module 5 are simultaneously arranged on the surface of the planar optical waveguide 1 provided with the first electrode 2, and the in-coupling module 4 and the out-coupling module 5 are separately arranged on two sides of the first electrode 2; the planar optical waveguide 1 includes at least one quantum dot layer and at least one dielectric layer which are stacked and combined, and the quantum dot layer and the dielectric layer are not parallel to the direction of an electric field between the first electrode and the second electrode.
In the embodiment of the present invention, the planar optical waveguide 1 is disposed between the first electrode 2 and the second electrode 3, and is responsible for transmitting the optical wave of a specific guided mode. The planar optical waveguide 1 adopts a quantum dot layer-dielectric layer nanoscale layered structure. The planar optical waveguide 1 comprises a quantum dot layer structure, and the quantum dot material has an electro-absorption response which is more than 10 times larger than that of a bulk material of the same material, so that the efficiency of voltage modulation light intensity of the planar optical waveguide 1 can be greatly improved, and the modulation of refraction factors in the waveguide can be realized by utilizing the nano-sized electric shielding effect of the quantum dots; on the other hand, due to the embedding of the dielectric layer, the planar waveguide can be flattened; meanwhile, the quantum dot layer and the dielectric layer are combined, and the quantum dot layer-the dielectric layer form a multi-layer structure with a nano scale, so that the refractive index distribution in the planar optical waveguide 1 can be regulated.
In the embodiment of the invention, the refractive index factor of the dielectric layer is preferably less than or equal to 1.6, and in the preferred range, the dielectric layer can be better matched with the quantum dot layer so as to further realize the regulation and control of the refractive index distribution in the planar optical waveguide 1.
In the embodiment of the present invention, it is preferable that the quantum dot layer and the dielectric layer are stacked to form the planar optical waveguide 1, and the quantum dot layer and the dielectric layer are not parallel to each other in the electric field direction of the electric field between the first electrode 2 and the second electrode 3, so as to realize the matching between the dielectric layer and the quantum dot layer, and realize the control of the refractive index distribution in the planar optical waveguide 1. Preferably, the quantum dot layer and the dielectric layer are perpendicular to the electric field direction of the electric field between the first electrode 2 and the second electrode 3, respectively, so as to more effectively improve the matching degree of the dielectric layer and the quantum dot layer. The number and the stacking mode of the quantum dot layers and the dielectric layers are not limited, and the quantum dot layer and the dielectric layer can only comprise one quantum dot layer and one dielectric layer or comprise a plurality of quantum dot layers and a plurality of dielectric layers; the quantum dot layers and the dielectric layers may be alternately stacked on top of each other in a single layer or in multiple layers. For example, a quantum dot layer may be used as a central layer, and then dielectric layers may be stacked on the upper and lower surfaces of the quantum dot layer, and then the quantum dot layers may be sequentially stacked on the dielectric layers. The thicknesses of the quantum dot layer and the quantum dot layer can be the same or different, the thicknesses of the dielectric layer and the dielectric layer can be the same or different, and the thicknesses of the quantum dot layer and the dielectric layer can be the same or different.
In order to ensure that the dielectric shielding effect can be realized and simultaneously enable the quantum dot layer and the dielectric layer multilayer structure to effectively regulate and control the refractive index distribution in the waveguide, the thickness of the quantum dot layer is preferably 0nm-30nm but not 0, and the thickness of the dielectric layer is preferably 5nm-20 nm.
Taking a single quantum dot layer and a single dielectric layer as an example, as shown in fig. 2, taking the center of the planar optical waveguide 1 as symmetry, the thickness of the waveguide center quantum dot layer 2013 is larger as the distance between the quantum dot layer and the center of the planar optical waveguide 1 increases, and the thickness of each of the other quantum dot layers away from the center gradually decreases. The structure can realize a structure of 11 layers, from top to bottom, of 10nm thick dielectric layer 202, 10nm thick quantum dot layer 2011, 10nm thick dielectric layer 202, 15nm thick quantum dot layer 2012, 10nm thick dielectric layer 202, 30nm thick quantum dot layer 2013, 10nm thick dielectric layer 202, 15nm thick quantum dot layer 2014, 10nm thick dielectric layer 202, 10nm thick quantum dot layer 2015 and 10nm thick dielectric layer 202, and can realize continuous change of refractive index in ultraviolet, visible and infrared bands as shown in fig. 2 (wherein 203 is the refractive index corresponding to each quantum dot layer and dielectric layer 202, and 204 is the medium-effective refractive index distribution of the waveguide under the condition that each layer is in a nanometer size), so that the tolerance of the waveguide to a photoconductive mode is reduced, and the modulation efficiency of light intensity is improved.
In the embodiment of the present invention, the quantum dot material of the quantum dot layer may specifically include at least one of a group II-VI compound semiconductor, a group III-V compound semiconductor, a group II-V compound semiconductor, a group III-VI compound semiconductor, a group IV-VI compound semiconductor, a group I-III-VI compound semiconductor, a group II-IV-VI compound semiconductor, and a group IV simple substance, and may further include an oxide having a refractive factor of 2.0 or more in the visible light band, but is not limited to the foregoing materials. More specifically, the quantum dot material may be at least one of CdSe, CdS, CdTe, ZnO, ZnSe, ZnS, ZnTe, HgS, HgSe, HgTe, CdZnSe; and/or at least one of InAs, InP, InN, GaN, InSb, InAsP, InGaAs, GaAs, GaP, GaSb, AlP, AlN, AlAs, AlSb, CdSeTe, ZnCdSe; and/or at least one of carbon, silicon, germanium; and/or Ta2O5、Nb2O5、TiO2At least one of (1).
In embodiments of the present invention, the dielectric layer may be a dielectric polymer to achieve planarization of the waveguide.
In the embodiment of the present invention, the in-coupling module 4 and the out-coupling module 5 are simultaneously disposed on the surface of the planar optical waveguide 1 where the first electrode 2 is disposed, and the in-coupling module 4 and the out-coupling module 5 are separately disposed on both sides of the first electrode 2. The in-coupling module 4 couples the free-space optical wave into the optical waveguide, and the optical waveguide is responsible for transmitting the optical wave of a specific guide mode; the out-coupling module 5 couples the light wave at the end of the optical waveguide out of the optical waveguide.
In the embodiment of the present invention, the coupling manner of the in-coupling module 4 and the out-coupling module 5 is not particularly limited, and preferably, the coupling manner of the in-coupling module 4 may include at least one of prism coupling and grating coupling, and the coupling manner of the out-coupling module 5 includes at least one of prism coupling and grating coupling.
In the embodiment of the present invention, the first electrode 2 and the second electrode 3 are respectively disposed on two mutually corresponding surfaces of the planar optical waveguide 1, and are respectively connected to the power supply and the ground. The first electrode 2 and the second electrode 3 are mutually matched and are responsible for applying an external electric field to a section of optical waveguide material to modulate the transmission of light waves in the optical waveguide, and the direction of the electric field is parallel to the section of the optical waveguide. Specifically, the material of the first electrode 2 and the second electrode 3 is not limited, and a conventional electrode material may be used.
The light intensity modulator provided by the embodiment of the invention comprises a first electrode 2, a planar optical waveguide 1, a second electrode 3, an in-coupling module 4 and an out-coupling module 5, wherein the planar optical waveguide 1 comprises a quantum dot layer and a dielectric layer, and the electro-absorption efficiency of a quantum dot material in the quantum dot layer is higher than that of a bulk material of the same material by more than one order of magnitude, so that the electro-absorption efficiency of the light intensity modulator is greatly improved; meanwhile, the laminated structure of the quantum dot layer and the dielectric layer can effectively improve the regulation and control of the refractive index distribution in the waveguide, thereby reducing the tolerance of the waveguide to a light guide mode and improving the modulation efficiency of light intensity.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An optical intensity modulator, comprising:
the planar optical waveguide comprises a planar optical waveguide, a first electrode, a second electrode, an in-coupling module and an out-coupling module;
the planar optical waveguide is arranged between the first electrode and the second electrode, the in-coupling module and the out-coupling module are simultaneously arranged on the surface of the planar optical waveguide provided with the first electrode, and the in-coupling module and the out-coupling module are separately arranged on two sides of the first electrode;
the planar optical waveguide comprises at least one quantum dot layer and at least one dielectric layer which are combined in a laminated mode, and the quantum dot layer and the dielectric layer are not parallel to the direction of an electric field between the first electrode and the second electrode;
the quantum dot layers and the dielectric layers are alternately stacked to form the planar optical waveguide.
2. The optical intensity modulator of claim 1, wherein the dielectric layer has a refractive index factor of less than or equal to 1.6.
3. The optical intensity modulator of claim 1 or 2, wherein the thickness of the quantum dot layer decreases as its distance from the center of the planar optical waveguide increases.
4. The optical intensity modulator of claim 1 or 2, wherein the quantum dot layer has a thickness of 0nm to 30nm, but not 0.
5. The optical intensity modulator of claim 1 or 2, wherein the dielectric layer has a thickness of 5nm to 20 nm.
6. The optical intensity modulator according to claim 1 or 2, wherein the quantum dot material of the quantum dot layer comprises at least one of a group II-VI compound semiconductor, a group III-V compound semiconductor, a group II-V compound semiconductor, a group III-VI compound semiconductor, a group IV-VI compound semiconductor, a group I-III-VI compound semiconductor, a group II-IV-VI compound semiconductor, a group IV element.
7. The optical intensity modulator of claim 6, wherein the quantum dot material of the quantum dot layer further comprises an oxide having a refractive factor of 2.0 or more in the visible light band.
8. The optical intensity modulator of claim 7, wherein the II-VI compound semiconductor comprises at least one of CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, CdZnS, CdZnSe, CdZnSeS; and/or
The III-V compound semiconductor comprises at least one of GaP, GaAs, InP and InAs; and/or
The group IV simple substance comprises at least one of carbon, silicon and germanium; and/or
The oxide comprises Ta2O5、Nb2O5、TiO2At least one of (1).
9. The optical intensity modulator of claim 1 or 2, wherein the dielectric layer is a dielectric polymer.
10. The optical intensity modulator of claim 1 or 2, wherein the coupling mode of the in-coupling module comprises at least one of prism coupling and grating coupling, and the coupling mode of the out-coupling module comprises at least one of prism coupling and grating coupling.
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Citations (5)
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| CN1755427A (en) * | 2004-09-29 | 2006-04-05 | 株式会社东芝 | Refractive index variable element and method of varying refractive index |
| CN101609960A (en) * | 2008-06-19 | 2009-12-23 | 阿尔卡特朗讯 | Optics with quantum-dot structure |
| CN101639577A (en) * | 2009-05-27 | 2010-02-03 | 东南大学 | Quantum dot optical modulator based on quantum-confined Stark effect |
| CN1723401B (en) * | 2003-05-23 | 2010-12-01 | 松下电器产业株式会社 | Optical device, optical device manufacturing method, and optical integrated device |
| CN104570541A (en) * | 2015-01-15 | 2015-04-29 | 苏州旭创科技有限公司 | Electro-optical modulator |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4372048B2 (en) * | 2005-05-30 | 2009-11-25 | 株式会社東芝 | Refractive index change element |
| US7180648B2 (en) * | 2005-06-13 | 2007-02-20 | Massachusetts Institute Of Technology | Electro-absorption modulator device and methods for fabricating the same |
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- 2017-06-01 CN CN201710403862.2A patent/CN108983446B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1723401B (en) * | 2003-05-23 | 2010-12-01 | 松下电器产业株式会社 | Optical device, optical device manufacturing method, and optical integrated device |
| CN1755427A (en) * | 2004-09-29 | 2006-04-05 | 株式会社东芝 | Refractive index variable element and method of varying refractive index |
| CN101609960A (en) * | 2008-06-19 | 2009-12-23 | 阿尔卡特朗讯 | Optics with quantum-dot structure |
| CN101639577A (en) * | 2009-05-27 | 2010-02-03 | 东南大学 | Quantum dot optical modulator based on quantum-confined Stark effect |
| CN104570541A (en) * | 2015-01-15 | 2015-04-29 | 苏州旭创科技有限公司 | Electro-optical modulator |
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