CN108975318B - Graphene-coated silylene, preparation method and use method thereof - Google Patents

Graphene-coated silylene, preparation method and use method thereof Download PDF

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CN108975318B
CN108975318B CN201810930600.6A CN201810930600A CN108975318B CN 108975318 B CN108975318 B CN 108975318B CN 201810930600 A CN201810930600 A CN 201810930600A CN 108975318 B CN108975318 B CN 108975318B
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CN108975318A (en
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孙旭辉
聂宇婷
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Suzhou University
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Abstract

The invention provides graphene-coated silicon alkene, a preparation method and a use method thereof. The preparation method comprises the following steps: placing a metal catalytic substrate in a reaction cavity, removing a natural oxidation layer on the metal catalytic substrate to expose a metal layer, selecting a gaseous hydrocarbon carbon source as a precursor, and forming graphene on the metal layer by a chemical vapor deposition method; closing the gaseous hydrocarbon carbon source of the reaction cavity, and introducing a silicon-containing gas source and reducing gas to enable evaporated silicon atoms to epitaxially grow silicon alkene on the surface layer of the graphene; and only closing the silicon-containing gas source, or simultaneously closing the silicon-containing gas source and the reducing gas, and introducing a gaseous hydrocarbon carbon source to coat carbon atoms on the surface of the silicon alkene, so as to obtain the graphene-coated silicon alkene. The silylene obtained in the invention can keep the original structure in the air for more than two years, and the method breaks through the traditional method, and the preparation conditions are looser and simpler.

Description

Graphene-coated silylene, preparation method and use method thereof
Technical Field
The invention relates to the technical field of silicon alkene preparation, in particular to graphene-coated silicon alkene prepared based on metal catalysis, a preparation method and a using method thereof.
Background
The silylene is a two-dimensional nano material with silicon atoms arranged in a planar honeycomb shape, and has a good two-dimensional crystal structure and electrical properties. Compared with zero-band-gap graphene, the silicon alkene has a certain forbidden band width, so that the silicon alkene has a wide application prospect in the fields of semiconductor electronic devices and optoelectronic devices. Sp of silylene2-sp3The surface of the structure is extremely sensitive, so that the chemical environment is very active, and the preparation of the silylene has strong limitation.
The existing method for preparing the silylene is a silicon source evaporation epitaxial growth method. In a high vacuum environment, silicon wafers are used as silicon sources, and silicon is heated at high temperatureThe atoms are deposited on different substrates selected from single crystals having an oriented crystalline phase, such as Ag (001), Ag (110), Ag (111), Ir (111) or ZrB2(0001). However, when the evaporated atoms epitaxially grow a silylene on a substrate, the silylene is reconstructed due to strong interface interaction, the warpage degree of the atomic layer is changed, some atoms are increased, some atoms are decreased, and the unit cell is enlarged and the symmetry is reduced, or a few-layer (few-layer) structure is formed, so that the dirac-fermi characteristic of the silylene is destroyed, and the performance of the silylene film layer material is affected. Some researchers have used alumina coating to protect the silylene synthesized on the silver surface, however, the silylene prepared in this way is very unstable and can be completely oxidized in less than one day.
Therefore, solving the technical problems of harsh conditions for preparing the silylene and improving the stability of the silylene in the air is an urgent need in the development of the silylene.
Disclosure of Invention
One purpose of the invention is to solve the technical problem of harsh conditions for preparing the silylene.
It is another object of the present invention to improve the stability of silylene in air.
Particularly, the invention provides a method for preparing graphene-coated silicon alkene based on metal catalysis, which comprises the following steps:
placing a metal catalytic substrate in a reaction cavity, removing a natural oxidation layer on the surface of the metal catalytic substrate to expose a metal layer, selecting a gaseous hydrocarbon carbon source as a precursor, and forming graphene on the metal layer by a chemical vapor deposition method;
closing the gaseous hydrocarbon carbon source of the reaction cavity, and introducing a silicon-containing gas source and reducing gas to enable evaporated silicon atoms to epitaxially grow silicon alkene on the surface layer of the graphene;
and only closing the silicon-containing gas source, or simultaneously closing the silicon-containing gas source and the reducing gas, and introducing the gaseous hydrocarbon carbon source to coat carbon atoms on the surface of the silicon alkene, so as to obtain the graphene-coated silicon alkene on the metal substrate.
Optionally, the reaction temperature is maintained at 400-1000 ℃ throughout the process of obtaining the graphene-coated silylene.
Optionally, the reaction temperature is maintained at 600-800 ℃ throughout the process of obtaining the graphene-coated silylene.
Optionally, in the step of epitaxially growing the silicon alkene on the graphene surface layer, the reaction time is 5-50s, the gas flow of the introduced silicon-containing gas source is 2-20sccm, and the gas flow of the reducing gas is 5-30 sccm. Wherein sccm is a volume flow unit.
Optionally, in the step of coating carbon atoms on the surface of the silicon alkene, the reaction time is 5-50s, and the gas flow of the gaseous hydrocarbon carbon source is 10-100 sccm;
optionally, in the step of coating the silicon surface with carbon atoms, the reducing gas is introduced at a gas flow rate of 5 to 30 sccm.
Optionally, when graphene is formed on the metal layer by a chemical vapor deposition method, a reducing gas is introduced into the reaction chamber, and a voltage pulse is added to generate plasma in the reaction chamber.
Particularly, the present invention also provides graphene-coated silylene prepared by the preparation method according to any one of claims 1 to 6, which includes a metal layer, a first graphene layer formed on the metal layer, silylene formed on an outer surface of the first graphene layer, and a second graphene layer formed on an outer surface of the silylene.
Optionally, the graphene-coated silylene is film-shaped or spherical.
Optionally, the thickness of the graphene-coated silicon alkene ranges from 2nm to 100 nm.
Particularly, the invention further provides a using method of the graphene-coated silicon alkene, and the metal layer is removed by using an etching method when the graphene-coated silicon alkene is used.
According to the scheme of the embodiment of the invention, the silicon alkene is epitaxially grown on the surface of the graphene, and the graphene is coated on the surface of the silicon alkene, so that the silicon alkene can be easily obtained. The graphene can be stored in a mode that the metal substrate graphene is coated with the silicon alkene, and when the silicon alkene is used, the metal layer can be etched. The stability of the obtained silylene in the air is extremely high, experiments prove that the silylene can keep the original structure in the air for more than two years, and the method for preparing the silylene breaks through the traditional method, has loose preparation conditions and is simple.
In addition, graphene-coated silylene can be obtained in a large area, for example, four inches of graphene-coated silylene can be obtained, where the substrate allows. Moreover, the graphene-coated silicon alkene prepared by the method has the characteristics of flexibility and bending, and can be transferred to a needed substrate. The method of the invention adopts the traditional vapor deposition method, saves resources and has wide sources.
The above and other objects, advantages and features of the present invention will become more apparent to those skilled in the art from the following detailed description of specific embodiments thereof, taken in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the invention will be described in detail hereinafter, by way of illustration and not limitation, with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily drawn to scale. In the drawings:
fig. 1 is a schematic flow diagram of a method of preparing graphene-coated silylene according to one embodiment of the invention;
fig. 2 is a scanning electron microscope image of graphene-coated silylene including a metal layer according to an embodiment of the present invention;
FIG. 3 is a Transmission Electron Microscope (TEM) image of graphene-coated silylene including a metal layer according to one embodiment of the invention;
fig. 4 is an electron diffraction pattern of a TEM image of graphene-coated silylene containing a metal layer according to an embodiment of the present invention;
FIG. 5 is a low power TEM image of graphene-coated silylene of the metal-containing layer shown in FIG. 4;
FIG. 6 is a high power TEM image of graphene coated silylene of the metal-containing layer shown in FIG. 4;
FIG. 7 is a schematic representation of graphene-coated silicon-containing alkene of the metal-containing layer shown in FIG. 4;
FIG. 8A is a TEM-mapping elemental distribution diagram of a topographic crystal structure of graphene-coated silylene of a metal-containing layer according to one embodiment of the present invention;
FIG. 8B is a TEM-mapping elemental distribution diagram of the topographic crystal structure of the graphene coated silylene with the metal layer removed according to one embodiment of the invention;
FIG. 9 is a three-dimensional structure diagram of AFM surface roughness of graphene-coated silylene containing metal layer according to one embodiment of the invention;
fig. 10 is a roughness profile of graphene-coated silylene of the metal-containing layer shown in fig. 9;
fig. 11A is an elemental morphology profile of STXM mapping of graphene-coated silylene of a metal-containing layer according to an embodiment of the invention;
fig. 11B is an elemental morphology profile of STXM mapping of graphene coated silylene according to an embodiment of the invention;
fig. 12A to 12D are K-edge absorption spectra of carbon and silicon, respectively, in a simultaneous experimental XANES absorption spectrum according to an embodiment of the present invention, wherein fig. 12A and 12B are characterization results of graphene-coated silylene including a metal layer, and fig. 12C and 12D are characterization results of graphene-coated silylene;
fig. 13A to 13D are a photoelectron spectrum of silicon 2p, a photoelectron spectrum of carbon 1s, and a photoelectron spectrum of oxygen 1s, and a photoelectron spectrum of copper 2p of graphene-coated silylene including a metal layer according to an embodiment of the present invention, respectively.
Detailed Description
Fig. 1 shows a schematic flow diagram of a method for preparing graphene-coated silylene according to an embodiment of the present invention. As shown in fig. 1, the preparation method comprises the following steps:
s100, placing a metal catalytic substrate in a reaction cavity, removing a natural oxidation layer on the surface of the metal catalytic substrate to expose a metal layer, selecting a gaseous hydrocarbon carbon source as a precursor, and forming graphene on the metal layer by a chemical vapor deposition method;
s200, closing a gaseous hydrocarbon carbon source of the reaction cavity, and introducing a silicon-containing gas source and reducing gas to enable evaporated silicon atoms to epitaxially grow silicon alkene on the surface layer of the graphene;
s300, only closing the silicon-containing gas source, or simultaneously closing the silicon-containing gas source and the reducing gas, and introducing a gaseous hydrocarbon carbon source to coat carbon atoms on the surface of the silicon alkene, so as to obtain the graphene-coated silicon alkene.
In step S100, the material of the metal-based catalytic substrate may be, for example, a metal such as copper, nickel, platinum, iridium, and ruthenium. In a preferred embodiment, a copper substrate, such as a copper foil, is selected. The oxide layer of the copper foil is copper oxide, and the method for removing the copper oxide comprises the following steps:
vacuumizing the reaction cavity to a first preset air pressure, and introducing reducing gas with a first preset flow rate to control the air pressure in the reaction cavity to be a second preset air pressure;
raising the temperature of the reaction chamber to a first predetermined temperature;
and adding a voltage pulse capable of generating plasma into the reaction cavity to generate plasma in the reaction cavity, and removing the copper oxide after reacting for a preset time.
The first predetermined pressure may be 0.2mbar, the first predetermined flow rate may be 200sccm, and the second predetermined pressure may be 6mbar, for example. The first predetermined temperature may be, for example, 600 ℃. In other embodiments, the first predetermined temperature may be, for example, 400 ℃, 500 ℃, 700 ℃, 800 ℃, 900 ℃ or 1000 ℃, or may be any value within the range of 400 ℃ and 1000 ℃. The voltage applied to generate plasma may be 800V, the power may be 40W, and the frequency may be 12 KHz. The predetermined time may be, for example, 60 s. The reducing gas in the step of removing copper oxide may be, for example, hydrogen.
After removing the copper oxide, the following steps are further included to form graphene on the metal layer:
reducing the gas flow of the reducing gas to a second preset flow, and introducing for a certain time;
raising the temperature of the reaction chamber to a second predetermined temperature;
and introducing a gaseous hydrocarbon carbon source with a certain flow, and forming graphene on the metal layer under the condition that the plasma exists.
In the step of forming graphene on the metal layer, the reducing gas may be, for example, hydrogen. The second predetermined flow rate may be, for example, 10sccm, and the predetermined time period may be, for example, 10 s. The second predetermined temperature may be, for example, 700 ℃. In other embodiments, the second predetermined temperature may be, for example, 400 ℃, 500 ℃, 600 ℃, 800 ℃, 900 ℃ or 1000 ℃, or may be any value within the range of 400 ℃ and 1000 ℃. The gaseous hydrocarbon carbon source may be, for example, methane, ethylene, ethane, or propane. In one embodiment, the gaseous hydrocarbon carbon source is selected to be methane, and the above-mentioned flow rate of the gaseous hydrocarbon carbon source may be 40sccm, for example, and the purity of the selected methane may be 6N, for example.
In step S200, the silicon-containing gas source may be, for example, silane, and the purity of silane may be selected to be 6N. In which the voltage pulse capable of generating plasma described in the step S100 is not provided. The flow rate of the reducing gas, such as hydrogen, may be, for example, 10sccm, or may be 5sccm, 15sccm, 20sccm, 25sccm, or 30sccm, or may be any value within the range of 5 to 30 sccm. The flow rate of the silicon-containing gas source, such as silane, can be, for example, 6sccm, can also be 2sccm, 3sccm, 10sccm, 15sccm, or 20sccm, and can also be any value within the range of 2-20 sccm. The reaction time in step S200 may be 10S, or may be 5S, 20S, 30S, 40S, or 50S. In this step, the hydrogen gas path may be temporarily closed, and the argon gas path may be opened, for example, 50sccm of argon gas may be introduced for 5s, 10sccm, 20sccm, 30sccm, and 40sccm, or any value within a range of 10-50sccm, at this time, although the hydrogen gas path is closed, the switching time is only a few seconds, so that hydrogen gas still exists in the reaction chamber.
In step S300, one embodiment is to turn off the introduction of the silicon-containing gas source only, and another embodiment is to turn off the introduction of the silicon-containing gas source and the reducing gas simultaneously. In this step, the gas flow rate of the gaseous hydrocarbon carbon source, such as methane, may be 40sccm, may be 10sccm, 20sccm, 30sccm, 50sccm, 60sccm, 70sccm, 80sccm, 90sccm, or 100sccm, or may be any value within a range of 10-100 sccm. The methane gas may be supplied for 5s, 8s, or 10s, or for any of 2 to 15 s. In the embodiment of continuing to introduce the reducing gas, the gas flow rate of the introduced reducing gas is 10sccm, and may be 5sccm, 15sccm, 20sccm or 30sccm, or may be any value within the range of 5-30 sccm.
According to the scheme of the embodiment of the invention, the silicon alkene is epitaxially grown on the surface of the graphene, and the graphene is coated on the surface of the silicon alkene, so that the silicon alkene can be easily obtained. The metal substrate graphene can be stored together in a mode of coating the metal substrate graphene with the silicon alkene during storage, and the metal layer can be etched away during usage of the silicon alkene. The stability of the obtained silylene in the air is extremely high, experiments prove that the silylene can keep the original structure in the air for more than two years, and the method for preparing the silylene breaks through the traditional method, has loose preparation conditions and is simple.
In addition, graphene-coated silylene can be obtained in a large area, for example, four inches of graphene-coated silylene can be obtained, where the substrate allows. Moreover, the graphene-coated silicon alkene prepared by the method has the characteristics of flexibility and bending, and can be transferred to a needed substrate. The method of the invention adopts the traditional vapor deposition method, saves resources and has wide sources.
Particularly, the invention also provides graphene-coated silicon alkene prepared by the preparation method, which comprises a metal layer, a first graphene layer formed on the metal layer, silicon alkene formed on the outer surface of the first graphene layer and a second graphene layer formed on the outer surface of the silicon alkene. The graphene-coated silicon alkene is film-shaped or spherical. Fig. 2 shows a scanning electron microscope image of graphene-coated silylene according to an embodiment of the present invention. Fig. 3 shows a transmission electron microscope image of graphene-coated silylene according to an embodiment of the present invention. As shown in fig. 2 and 3, the graphene-coated silylene obtained in this example was spherical. The thickness of the graphene-coated silylene is in the range of 2-100nm, and may be, for example, 2nm, 5nm, 10nm, 30nm, 50nm, 70nm, 90nm or 100nm, or may be any value of 2-100 nm.
Particularly, the invention further provides a using method of the graphene-coated silicon alkene, and the metal layer is removed by using an etching method when the graphene-coated silicon alkene is used. The specific operation process is as follows:
firstly, taking PMMA/chlorobenzene solution as a transfer film to be coated on the surface of prepared graphene coated silicon alkene with a metal substrate in a spin coating mode. The PMMA/chlorobenzene solution is prepared in advance, and the concentration of the PMMA/chlorobenzene solution can be 46mg/ml, for example. The spin coating speed is set in advance, for example, the first preset rotating speed can be set to 900r/s, and the rotating time can be set to 9 s; the second preset rotating speed is set to be 6000r/s, and the rotating time is 30 s;
and secondly, baking the metal substrate graphene coated with PMMA on a heating plate. The preset baking temperature can be set to 85 ℃, and the baking time can be 5 minutes;
and thirdly, etching by using a solution method to remove the metal copper. Wherein, a mixed solution of anhydrous copper sulfate, hydrochloric acid and water is prepared in advance, and the volume ratio of the mixed solution can be 1:5:5, for example. The etching time is determined according to the size of the selected graphene-coated silicon alkene, and the larger the size of the selected metal substrate graphene-coated silicon alkene is, the longer the etching time is, for example, 10h, 6h, 8h, 10h and 12h, or any value between 2 and 24 h;
fourthly, after the metal copper substrate is removed, taking out the graphene-coated silicon alkene thin layer and sequentially cleaning for 3 times by using deionized water, wherein the resistivity of the deionized water can be 18M omega cm for example;
fifthly, drying the graphene-coated silicon alkene, wherein the drying temperature can be 85 ℃, the drying time can be 2 minutes, the drying can be natural drying at normal temperature and normal pressure, and the drying time is relatively long;
sixthly, removing the PMMA film on the graphene-coated silicon alkene by using acetone, wherein two containers need to be prepared and filled with fresh acetone, and then sequentially cleaning and removing the PMMA film on the graphene-coated silicon alkene;
and seventhly, drying the acetone on the graphene coated silicon alkene by using nitrogen. The substrate carrying the graphite-coated silicon alkene required in the transfer process can be selected according to the requirement, and can be flexible or hard materials such as glass, plastic, metal and the like.
And removing the metal layer to obtain a product which is graphene coated silicon alkene. The thickness of the graphene-coated silicon alkene is not more than 50 nm.
Fig. 4 to 13 show characterization data of the graphene-coated silylene containing the metal layer prepared by the above preparation method and the graphene-coated silylene after the metal layer is removed, which will be described in detail below.
As can be seen from fig. 4 to 6, the graphene-coated silylene prepared by the preparation method according to the above embodiment is spherical. Moreover, the outside of the copper is wrapped by graphene and silicon alkene, and the structure of wrapping silicon alkene by graphene exists
Figure BDA0001766519160000071
And
Figure BDA0001766519160000072
the interplanar spacing of (a). Wherein the interplanar spacing of the metallic copper is 2.1 angstroms
Figure BDA0001766519160000073
That is, the obtained copper has a Cu (111) crystal plane.
Fig. 7 shows a structure diagram of a spherical structure of graphene-coated silylene including a metal layer according to an embodiment of the present invention. As can be seen from fig. 7, the spherical structure includes, from the inside to the outside, a metal layer, a first graphene layer, a silicon oxide layer, a silicon alkene, and a second graphene layer. Wherein the detected silicon oxide layer is the result of partial silicon alkene oxidation in air.
Fig. 8A shows a Scanning Transmission Electron Microscope (STEM) elemental profile of graphene-coated silylene including a metal layer according to an embodiment of the invention. Fig. 8B shows an element distribution diagram of graphene coated silylene according to an embodiment of the invention. As can be seen from fig. 8A and 8B, the element distribution structure in the figure is identical to the simulated structure diagram shown in fig. 7.
Fig. 9 shows an Atomic Force Microscope (AFM) image of graphene-coated silylene including a metal layer according to an embodiment of the present invention. Fig. 10 is a graph illustrating a surface roughness profile of graphene-coated silylene according to an embodiment of the invention. As can be seen from fig. 9 and 10, the height difference of the surface protrusions is in the range of 2-150nm, which means that the size of the metal-based graphene-coated silicon particles is in the range of 2-150 nm.
Fig. 11A shows a scanning transmission X-ray microscope (STXM) image of graphene-coated silylene including a metal layer according to an embodiment of the invention. Fig. 11B shows a scanning transmission X-ray microscope (STXM) view of the graphene-coated silylene with the metal layer removed, according to an embodiment of the present invention. Again, the spherical and thin film regions are clearly distributed as demonstrated by fig. 11A and 11B.
Fig. 12A and 12B show X-ray near edge structure (XANES) diagrams of a carbon K-edge and a silicon K-edge of a graphene-coated silylene including a metal layer according to an embodiment of the present invention. Fig. 12C and 12D show XANES diagrams for the carbon K edge and the silicon K edge of graphene-coated silylene according to one embodiment of the invention. As shown in the figure, compared with the metal-substrate-containing graphene-coated silicon alkene and the graphene-coated silicon alkene, the peak position is not greatly changed, but the spectrum peak intensity ratio between different peak positions is changed, which indicates that the graphene-coated silicon alkene obtained after the metal layer is removed still maintains a relatively complete structural form.
Fig. 13 shows an X-ray photoelectron spectroscopy (XPS) graph of graphene-coated silylene including a metal layer according to an embodiment of the present invention. Fig. 13A is an XPS chart of silicon 2p, fig. 13B is an XPS chart of carbon 1s, fig. 13C is an XPS chart of oxygen 1s, and fig. 13D is an XPS chart of copper 2 p. As shown in fig. 13A, there are three main types of bonding of silicon atoms, and the peak position at 100.4 electron volts (eV) is assigned to the bonding type of the silylene structure, and the peak position at the high energy portion is assigned to the oxidized silicon atom. As shown in fig. 13B, there are four types of bonding of carbon atoms, 284.8eV being attributed to the binding energy of the carbon structure of graphene, and the other three peaks in the high energy region being attributed to the bonding energy of the carbon-oxygen bond. As shown in FIG. 13C, there are two types of bonding of oxygen atoms, and the peak at 531.5eV is attributed to the bonding energy of the C-O conjugate. As shown in fig. 13D, the bonding of copper is mainly copper with a portion of the surface oxidized.
Thus, it should be appreciated by those skilled in the art that while a number of exemplary embodiments of the invention have been illustrated and described in detail herein, many other variations or modifications consistent with the principles of the invention may be directly determined or derived from the disclosure of the present invention without departing from the spirit and scope of the invention. Accordingly, the scope of the invention should be understood and interpreted to cover all such other variations or modifications.

Claims (7)

1. A method for preparing graphene-coated silicon alkene based on metal catalysis is characterized by comprising the following steps:
placing a metal catalytic substrate in a reaction cavity, removing a natural oxidation layer on the metal catalytic substrate to expose a metal layer, selecting a gaseous hydrocarbon carbon source as a precursor, and forming graphene on the metal layer by a chemical vapor deposition method;
closing the gaseous hydrocarbon carbon source of the reaction cavity, and introducing a silicon-containing gas source and reducing gas to enable evaporated silicon atoms to epitaxially grow silicon alkene on the surface layer of the graphene;
only closing the silicon-containing gas source, or simultaneously closing the silicon-containing gas source and the reducing gas, and introducing the gaseous hydrocarbon carbon source to coat carbon atoms on the surface of the silicon alkene so as to obtain graphene-coated silicon alkene, wherein the graphene-coated silicon alkene is spherical, and the particle size of the graphene-coated silicon alkene is 2-150 nm;
keeping the reaction temperature at 400-1000 ℃ in the whole process of obtaining the graphene-coated silicon alkene;
in the step of epitaxially growing the silicon on the graphene surface layer, the reaction time is 5-50s, the gas flow of the introduced silicon-containing gas source is 2-20sccm, and the gas flow of the reducing gas is 5-30 sccm;
in the step of coating the surface of the silicon alkene with carbon atoms, the reaction time is 5-50s, and the gas flow of the introduced gaseous hydrocarbon carbon source is 10-100 sccm;
the metal catalytic substrate is a copper foil;
the graphene-coated silicon alkene structure is spherical and sequentially comprises a metal layer, a first graphene layer, silicon alkene and a second graphene layer from inside to outside;
when graphene is formed on the metal layer by a chemical vapor deposition method, reducing gas is introduced into the reaction cavity, and voltage pulse is added to generate plasma in the reaction cavity.
2. The method as claimed in claim 1, wherein the reaction temperature is maintained at 600-800 ℃ throughout the process of obtaining the graphene-coated silylene.
3. The method as set forth in any one of claims 1 to 2, wherein the reducing gas is introduced at a gas flow rate of 5 to 30 seem in the step of coating the surface of the silicon face with carbon atoms.
4. A graphene-coated graphene prepared by the method of any one of claims 1 to 3, comprising a metal layer, a first graphene layer formed on the metal layer, a graphene formed on an outer surface of the first graphene layer, and a second graphene layer formed on an outer surface of the graphene.
5. The graphene-coated silicon alkene of claim 4, wherein the graphene-coated silicon alkene is spherical.
6. The graphene-coated silicon alkene of claim 4, wherein the graphene-coated silicon alkene has a thickness in a range of 2-100 nm.
7. The use method of the graphene-coated silicon alkene as claimed in any one of claims 4 to 6, wherein the metal layer can be removed by etching when the graphene-coated silicon alkene is used.
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