CN108957902A - Device for non-linear optical comprising boracite crystal - Google Patents

Device for non-linear optical comprising boracite crystal Download PDF

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CN108957902A
CN108957902A CN201810196573.4A CN201810196573A CN108957902A CN 108957902 A CN108957902 A CN 108957902A CN 201810196573 A CN201810196573 A CN 201810196573A CN 108957902 A CN108957902 A CN 108957902A
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crystal
boracite
electromagnetic radiation
linear optical
boracite crystal
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CN108957902B (en
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龙西法
王祖建
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Fujian Institute of Research on the Structure of Matter of CAS
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Fujian Institute of Research on the Structure of Matter of CAS
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3551—Crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12—Salt solvents, e.g. flux growth
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The present invention provides a kind of device for non-linear optical, and the device for non-linear optical includes boracite crystal, wherein the boracite crystal is by periodic polarized.The device for non-linear optical is the device that at least a branch of incidence electromagnetic radiation is different from the output radiation of incidence electromagnetic radiation by generating at least a branch of frequency after at least one piece of boracite crystal.The wave-length coverage of the incidence electromagnetic radiation is 0.155~4.0 μm.Boracite crystal is a kind of with ferroelectricity and the nonlinear photoelectric information functional crystal of deep ultraviolet, the device for non-linear optical manufactured with boracite crystal, by quasi-phase matching, (quasi-phase matched is using periodic polarized method, by applying pulse voltage to boracite crystal, realize the periodic inversion of ferroelectric domain), deep ultraviolet electromagnetic radiation output may be implemented.

Description

Device for non-linear optical comprising boracite crystal
Technical field
The present invention relates to a kind of device for non-linear optical, include boracite (Mg more particularly to one kind3B7O13Cl) crystal Device for non-linear optical.
Background technique
With the development of modern laser, limited, the Wu Fashi that directly can be obtained optical maser wavelength using laser crystal Existing full wave laser output, from ultraviolet to infrared spectral region, still there is free white wave section, especially dark purple exterior domain.Nonlinear optical Crystal is learned because of its distinctive nonlinear effect, such as frequency multiplication and frequency, difference frequency, parameter amplification, can effectively widen the wavelength model of laser It encloses.It is more that second harmonic generator, upper and lower frequency converter, optical parametric oscillator etc. can be made using the nonlinear effect of crystal Kind device for non-linear optical.The electromagnetic radiation that laser generates can carry out frequency conversion by device for non-linear optical, to obtain The electromagnetic radiation for obtaining more useful wavelength, widens the application range of laser.
Currently, ultraviolet-infrared band nonlinear optical crystal has been achieved with commercialization, and deep ultraviolet nonlinear optical crystal Development task it is still very arduous.Although it have been found that many ultraviolet absorption edge 200nm novel non-linearity optics below Crystal, but since its two-fold rate is not moderate (Δ n is about 0.06-0.10), phase mismatches, to cannot achieve deep ultraviolet laser Output.Currently, only fluoro boron potassjum beryllate crystal (referred to as KBBF) directly can realize that 200nm is below dark purple by two frequencys multiplication Outer electromagnetic radiation output.But layer growth habit and active force weak between layers due to KBBF, it is difficult to which obtaining can be real With the large-size crystals of change.Simultaneously as the toxicity of beryllium element, will all bring a negative impact researcher and environment, also not Conducive to carrying out deep developmental research.
Therefore, there is an urgent need to develop environmental-friendly novel deep ultraviolet nonlinear optical crystals.Excellent deep ultraviolet is non-thread Property optical crystal does not need only to have short ultraviolet absorption edge, moderate two-fold rate, it is also necessary to have big nonlinear factor (> 0.39pm/V).But analyzed from structural point, the ultraviolet absorption edge and nonlinear factor of crystal are usually contradictory, pass through knot The deep ultraviolet nonlinear optical crystal that structure Design and optimization is had excellent performance is extremely difficult.And use quasi-phase matching real Existing deep ultraviolet electromagnetic radiation output, can be effectively reduced the requirement to crystal optics performance.It is reported for the first time from quasi-phase matched principle Since road, be developed the methods for much preparing quasi-phase-matching crystals, wherein carried out by external electric field periodic polarized be Most efficient method, this requires we develop it is novel there is ferroelectric deep ultraviolet nonlinear optical crystal, it is brilliant to pass through regulation The polarization cycle of body realizes deep ultraviolet electromagnetic radiation output.
Summary of the invention
To improve the above problem, the present invention provides a kind of device for non-linear optical, and the device for non-linear optical includes side Boron stone crystal.
The chemical formula of the boracite crystal is Mg3B7O13Cl, the crystal are orthohormbic structure at room temperature, and space group is Pca21, cell parameter isα=β= γ=90 °.
Preferably, the crystal has X-ray crystal diffraction map substantially as shown in Figure 1a.
Preferably, the crystal has dielectric shown in ferroelectric hysteresis loop spectrogram shown in a basically as in Figure 2 and/or Fig. 2 b Wen Pu.Preferably, the coercive electric field of the crystal is 41.5kV/cm, and remanent polarization is 0.25 μ C/cm2。
Preferably, the crystal has shown in powder SHG effect map and/or Fig. 3 b substantially as shown in Figure 3a Through spectrum.Preferably, the ferroelectricity of the crystal-para-electric phase transition temperature (Curie temperature) is 258 DEG C.
Illustrative embodiment according to the present invention, the working principle of the optical device are as follows: two beam wavelength are λ1And λ2's Incidence electromagnetic radiation, by the boracite crystal, it is respectively λ that it is long, which to generate outgoing wave,1、λ2And λ3Output electromagnetic radiation, through filtering It is λ that required wavelength is obtained after mating plate3Outgoing electromagnetic radiation, wherein the wavelength of electromagnetic radiation meets relationship:
Illustrative embodiment according to the present invention, the ultraviolet absorption edge of the boracite crystal are 155nm.
Illustrative embodiment according to the present invention, the boracite crystal have nonlinear optical effect.
According to an embodiment of the invention, the boracite crystal is colourless transparent crystal.
According to an embodiment of the invention, being carried out to the boracite crystal period polarized.
According to an embodiment of the invention, the vertical direction the c cutting of the boracite crystal.
According to an embodiment of the invention, to the face+c plated film of the boracite crystal, and by being carried out to the face crystal+c Photoetching, corrosion and etc. produce polarized electrode structure.
Preferably, corroded with the right face+c of HF acid, obtained at the hole of boracite crystal；And it is covered on the face+c Upper one layer of SiO2Dielectric layer.
Preferably, corrosion depth is 5-20 μm.
Preferably, the SiO2Dielectric layer with a thickness of 15-25 μm.
Preferably, by alignment, development, to SiO2Dielectric layer is corroded, and the metal part of polarized electrode structure is exposed.
Preferably, the face-c of boracite crystal plate with+c face thickness and the consistent metal electrode of material, as Negative electrode.
According to an embodiment of the invention, the metal for plated film is selected from Al, Cr, Au or other alloy materials.
According to an embodiment of the invention, the plated film with a thickness of 60~100nm.
According to an embodiment of the invention, the boracite crystal is period polarized using the progress of periodic polarized electrode.
According to an embodiment of the invention, the device for non-linear optical is by least a branch of incidence electromagnetic radiation by extremely The device of output electromagnetic radiation of at least a branch of frequency different from incidence electromagnetic radiation is generated after few one piece of boracite crystal.
According to an embodiment of the invention, the wave-length coverage of the incidence electromagnetic radiation is 0.155~4.0 μm, preferably 0.155~2.0 μm.
According to an embodiment of the invention, the device for non-linear optical can be realized frequency multiplication output.
According to an embodiment of the invention, the device for non-linear optical can be realized and frequency exports.
According to an embodiment of the invention, the device for non-linear optical can be realized difference frequency output.
According to an embodiment of the invention, the device for non-linear optical, which can be realized optical parameter, generates output.
The present invention also provides a kind of methods for handling electromagnetic radiation, including by one or more electromagnetic radiation using described non- The processing of linear optics device.
According to the method for the present invention, wherein after device for non-linear optical processing, it is different to generate at least a branch of frequency In the output electromagnetic radiation of incidence electromagnetic radiation.
The present invention also provides the preparation method of boracite crystal, this method includes being passed through by the boracite and fluxing agent of pre-burning Molten-salt growth obtains boracite crystal.
According to the present invention, it the described method comprises the following steps:
(1) boracite of pre-burning is prepared；
(2) boracite of pre-burning and fluxing agent are mixed, in molten salt furnace after heating, melting, heat preservation, cooling, is obtained Boracite crystal.
Method produced according to the present invention, the boracite of the pre-burning is with magnesium-containing compound and B2O3And/or H3BO3For raw material, Weighed, mixing, grinding, tabletting, shove charge are fired；
The magnesium-containing compound is MgCl2、MgO、MgCO3At least one of；
The dosage of the raw material is according to Mg3B7O13The distribution of Cl stoichiometric ratio；
Preferably, the MgCl2Can excessive 0.5~3wt%, such as excess 1.0wt%, 1.5wt%, 2.0wt%, 2.5wt%；
Preferably, the B2O3And/or H3BO3Excessive 1.5~8wt%, for example, excess 3wt%, 3.5wt%, 4.0wt%, 5.0wt%, 6.0wt%, 7.0wt%, 7.5wt%；
The temperature of the firing can be 700 DEG C or more, such as 750~950 DEG C, such as 800~900 DEG C；Firing time can Think 1~3h, such as 1.5~2.5h, such as 2.0h.
Method produced according to the present invention, the boracite of the pre-burning and the molar ratio of fluxing agent can be 1:(1~6)；
Method produced according to the present invention, the fluxing agent are MgCl2With B2O3Or H3BO3Mixture, wherein MgCl2With B2O3Or H3BO3Molar ratio can be (1~8): 1, such as (1~6): 1, such as (1~5): 1；Such as can be 1:1,2:1,3:1, 4:1,4.5:1.
Method produced according to the present invention, temperature is is risen to 800~1500 DEG C, such as 950~1400 DEG C by the heating, such as 1000~1200 DEG C；
Soaking time is 0.5~4 day, such as 1~3 day；
Temperature is is reduced to 15~40 DEG C by the cooling, and such as 20~25 DEG C.
The rate of heating and cooling can be identical or different, independently selected from 10~100 DEG C/h, such as 30~60 DEG C/ Hour, such as 40~50 DEG C/h.
Preferably, after cooling, it can also be rinsed with water, obtain boracite crystal.
Beneficial effect
Device for non-linear optical is prepared using boracite crystal in the present invention, wherein boracite crystal belongs to Pca21Space Group, non-centrosymmetric structure have ferroelectricity, B7O13Functional structure group makes it have short deep ultraviolet ABSORPTION EDGE and big Nonlinear effect.The present inventor has found that boracite crystal is a kind of new nonlinear optical crystal under study for action, has stable Physics, chemical property are not easy to deliquesce, and without problem of Cracking, are suitable for device for non-linear optical.Also, boracite crystal is one Kind has ferroelectricity and the nonlinear photoelectric information functional crystal of deep ultraviolet, the nonlinear optics device manufactured with boracite crystal Part, by quasi-phase matching, (quasi-phase matched is using periodic polarized method, by applying to boracite crystal Add pulse voltage, realize the periodic inversion of ferroelectric domain), deep ultraviolet electromagnetic radiation output may be implemented.
The present inventor is carried out by the optical property to the boracite crystal grown using method provided by the invention Characterization finds that the crystal has nonlinear optical effect and wide optics through wave-length coverage.Meanwhile present inventors have shown that side The ferroelectricity of boron stone crystal, characterization have obtained its perfect ferroelectric hysteresis loop.Therefore, it is manufactured with boracite crystal non-linear Optical device can be realized frequency multiplication and frequency, difference frequency, optical parameter generate output by periodic polarized quasi-phase matching.
Detailed description of the invention
Fig. 1 is the structure chart of boracite crystal: (a) X-ray single crystal diffraction map (b) space structure figure.
Fig. 2 is the electric property phenogram of 1 boracite crystal of embodiment: (a) ferroelectric hysteresis loop (b) dielectric temperature is composed.
Fig. 3 is the optical property phenogram of 1 boracite crystal of embodiment: (a) powder SHG effect map (b) penetrates light Spectrum.
Fig. 4 is periodic polarized electrode structure and flow chart: (a) the periodic polarized process of electrode structure main view (b)
Wherein 1 is boracite crystal, and 2 be the face+c of crystal, and 3 be the face-c of crystal, and 4 be positive pectination grating
Polarizing electrode, 5 be negative electrode, and 6 be SiO2Dielectric layer.
Fig. 5 present invention includes the working principle diagram of the device for non-linear optical of boracite crystal, wherein 1 is incoming electromagnetic spoke It penetrates, 2 be the device for non-linear optical manufactured with boracite crystal, and 3 be generated first outgoing electromagnetic radiation, and 4 be optical filter, 5 be the second outgoing electromagnetic radiation.
Fig. 6 includes the frequency multiplication output of the device for non-linear optical of boracite crystal.
Fig. 7 includes exporting with frequency for the device for non-linear optical of boracite crystal.
Fig. 8 includes the difference frequency output of the device for non-linear optical of boracite crystal.
Fig. 9 includes that the optical parameter of the device for non-linear optical of boracite crystal generates output.
Specific embodiment
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate the present invention Rather than it limits the scope of the invention.Furthermore, it is to be understood that after having read content disclosed in this invention, ability Field technique personnel can make various changes or modifications the present invention, and such equivalent forms equally fall within protection defined by the present invention Within the scope of.
Unless otherwise indicated, raw materials and reagents used in the following embodiment are commercial goods, or can be by Perception method preparation.
1 molten-salt growth boracite crystal of embodiment
(1) it prepares the boracite of pre-burning: using analytically pure MgCl2、H3BO3Initial feed is done, according to Mg3B7O13Clization Learn metering ratio, MgCl2And H3BO3Respectively excess 1wt% and 3wt% weighed, mixed, being ground, shove charge after tabletting, in 800~ Two hours of 900 DEG C of pre-burnings.
(2) crystal growth: using molten-salt growth boracite crystal, includes the following steps: the boracite of pre-burning and helps Flux (fluxing agent MgCl2And H3BO3The mixture of 1:1 in molar ratio, to ensure not introduce impurity phase) according to molar ratio 1:1 It weighed, mixed, is fitted into platinum crucible, crucible is put into molten salt furnace center, covers bell；With 50 DEG C per hour Rate is warming up to 1200 DEG C, and melting keeps the temperature two days, is then down to room temperature with 50 DEG C per hour of rate, is rinsed with water, the side of obtaining Boron stone crystal.The crystal is colorless and transparent, is at room temperature orthohormbic structure, space group Pca21, cell parameter is α=β=γ=90 ° (see Fig. 1 b).
2 molten-salt growth boracite crystal of embodiment
(1) it prepares the boracite of pre-burning: using analytically pure MgO, MgCl2、H3BO3Initial feed is done, according to Mg3B7O13Cl stoichiometric ratio, by MgO, MgCl2And H3BO3It weighs, wherein MgCl2And H3BO3Respectively excess 3wt% with 5wt%, shove charge after mixing, grinding, tabletting, in two hours of 800~900 DEG C of pre-burnings.
(2) crystal growth: using molten-salt growth boracite crystal, includes the following steps: the boracite of pre-burning and helps Flux (fluxing agent MgCl2And H3BO3The mixture of 3:1 in molar ratio) it weighed, mixed according to molar ratio 1:2, it is packed into platinum In golden crucible, crucible is put into molten salt furnace center, covers bell；1180 DEG C are warming up to 50 DEG C per hour of rate, is melted Melt, keeps the temperature two days, room temperature is then down to 50 DEG C per hour of rate, is rinsed with water, obtains boracite crystal.
3 molten-salt growth boracite crystal of embodiment
(1) it prepares the boracite of pre-burning: using analytically pure MgCl2、H3BO3Initial feed is done, according to Mg3B7O13Clization Metering ratio is learned, by MgCl2And B2O3It weighs, wherein MgCl2Excessive 2wt%, mixing, grinding, shove charge after tabletting, in 800~ Two hours of 900 DEG C of pre-burnings.
(2) crystal growth: using molten-salt growth boracite crystal, includes the following steps: the boracite of pre-burning and helps Flux (fluxing agent MgCl2And H3BO3The mixture of 3:1 in molar ratio) it weighed, mixed according to molar ratio 1:4, it is packed into platinum In golden crucible, crucible is put into molten salt furnace center, covers bell；1150 DEG C are warming up to 50 DEG C per hour of rate, is melted Melt, keeps the temperature two days, room temperature is then down to 50 DEG C per hour of rate, is rinsed with water, obtains boracite crystal.
The structural characterization of 4 boracite crystal of embodiment
At room temperature, using X-ray single crystal diffraction, the structure of 1 gained boracite crystal of embodiment is measured, such as attached drawing 1a.Institute It is Mercury CCD (Mo target) single crystal diffractometer with instrument.The crystal structure of embodiment 2 and 3 is same as Example 1.
The electric property of 5 boracite crystal of embodiment characterizes
(1) 2000 standard ferroelectricity measuring system of TF is used, the ferroelectric properties of 1 gained boracite crystal of embodiment is characterized (see Fig. 2 a).
Test condition: the frequency of alternating voltage is 5Hz, and test temperature is 180 DEG C.
Test result: the coercive electric field of crystal is 41.5kV/cm, and remanent polarization is 0.25 μ C/cm2。
(2) Alpha-A dielectric/impedance Analytical high resolution instrument (Novolcontrol, German) is used, implementation is characterized The dielectric response of 1 gained crystal of example (see Fig. 2 b).
Test condition: 30~400 DEG C of temperature-measuring range, small signal testing voltage 1V.
Test result: the ferroelectricity of crystal-para-electric phase transition temperature (Curie temperature) is 258 DEG C.
The optical property of 6 boracite crystal of embodiment characterizes
(1) at room temperature, using modified Kurtz-Perry method, the powder of 1 gained boracite crystal of embodiment is tested Frequency-doubled effect (see Fig. 3 a), the results showed that boracite crystal has nonlinear optical effect.
(2) McPherson2000 vacuum ultraviolet line absorption energy disperse spectroscopy is used, 1 gained boracite crystal of embodiment is characterized Ultraviolet absorption edge (see Fig. 3 b), the results showed that the ultraviolet absorption edge of boracite crystal be 155nm.
The stability and mechanical performance of 7 boracite crystal of embodiment characterize
At room temperature, the boracite crystal that the growth of embodiment 1 obtains is placed in air after placing one month, without apparent Moisture absorption phenomenon；
Embodiment 1 is grown obtained boracite crystal to weigh to obtain 1.05g, is placed one month in water, taking-up is dried, title Weight still 1.05g, without weight change；
Cutting processing is carried out to boracite crystal, does not find problem of Cracking.
Illustrate that boracite crystal has stable physical and chemical performance, is not easy to deliquesce, it is good mechanical property, easy to process.
Embodiment 8 includes the device for non-linear optical of boracite crystal
The cutting of the boracite crystal that the method for embodiment 1 the is obtained vertical direction c, polishing at thickness 1mm optics Chip；Plated film, such as Fig. 4 carried out to the face+c of crystal, the plating filmed metals for electrode include Al, Cr, Au or other alloy materials, Coating film thickness is 60~100nm；By to the face crystal+c carry out photoetching, corrosion and etc. produce polarized electrode structure；With The right face+c of 40% HF acid is corroded 1-2 minutes, is removed electrode section, 5-20 μm of corrosion depth, is obtained at the hole of boracite crystal； The SiO of upper about 20 μm of a layer thickness is covered on the face+c2Dielectric layer, refractive index are 1.45~1.50；By alignment, development, Corrosion and etc. processing, expose the metal part of polarized electrode structure, for use in the application of applying pulse voltage；In square boron The face-c of stone crystal plates and+c face thickness and the consistent metal electrode of material, as negative electrode.Specific polarization process is detailed See page 7 page-the 8 of specification in Chinese patent 201410068516.X and example 3 and example 4.The so polarization side's of obtaining boron Stone device for non-linear optical.
Embodiment 9 includes the frequency multiplication output of the device for non-linear optical of boracite crystal
Working principle: a branch of wavelength is λ1Electromagnetic radiation, pass through the device for non-linear optical manufactured with boracite crystal Generation wavelength is λ2Outgoing electromagnetic radiation, wherein λ1And λ2Relationship are as follows:
Being placed in the device for non-linear optical that boracite crystal manufactures of obtaining as described in Example 8 is shown in fig. 5 In optical path, the electromagnetic radiation that a branch of wavelength is 0.355 μm is incident on period polarized boracite crystal, produces radio magnetic Radiation, by optical filter (filter plate: 0.355 μm decaying 99%, 0.178 μm through 80%) afterwards obtain 0.178 μm of electromagnetic radiation, As shown in Figure 6.
The device for non-linear optical that embodiment 10 is manufactured with boracite crystal is exported with frequency
Working principle: two beam wavelength are λ1And λ2Incidence electromagnetic radiation, pass through period polarized boracite crystal and generate wave A length of λ3Outgoing electromagnetic radiation, wherein λ1、λ2And λ3Relationship are as follows:
Being placed in the device for non-linear optical that boracite crystal manufactures of obtaining as described in Example 8 is shown in fig. 5 In optical path, two beam wavelength are respectively the electromagnetic radiation of 0.532 μm and 1.064 μm, are incident on period polarized boracite crystal, Radio magnetic radiation is produced, (filter plate: 0.532 μm of decaying 99%, 1.064 μm of decaying 99%, 0.355 μm thoroughly by optical filter It crosses and 80%) obtains 0.355 μm of electromagnetic radiation afterwards, as shown in Figure 7.
Embodiment 11 includes the difference frequency output of the device for non-linear optical of boracite crystal
Working principle: two beam wavelength are λ1And λ2Incidence electromagnetic radiation, pass through period polarized boracite crystal and generate wave A length of λ3Outgoing electromagnetic radiation, wherein λ1、λ2And λ3Relationship are as follows:
Being placed in the device for non-linear optical that boracite crystal manufactures of obtaining as described in Example 8 is shown in fig. 5 In optical path, the electromagnetic radiation that two beam wavelength are 0.532 μm and 0.676 μm is incident on period polarized boracite crystal, is generated It is emitted electromagnetic radiation, passes through optical filter (filter plate: 0.532 μm of decaying 99%, 0.676 μm of decaying 99%, 2.500 μm of transmissions 80%) 2.500 μm of electromagnetic radiation are obtained afterwards, as shown in Figure 8.
Embodiment 12 includes that the optical parameter of the device for non-linear optical of boracite crystal generates output
Working principle: a branch of wavelength is λ1Incidence electromagnetic radiation, pass through period polarized boracite crystal generation wavelength For λ2And λ3Outgoing electromagnetic radiation, wherein λ1、λ2And λ3Relationship are as follows:
Being placed in the device for non-linear optical that boracite crystal manufactures of obtaining as described in Example 8 is shown in fig. 5 In optical path, the electromagnetic radiation that a branch of wavelength is 1.064 μm is incident on period polarized boracite crystal, produces radio magnetic Radiation, by optical filter, (filter plate: 1.064 μm of decaying 99%, 3.661 μm of decaying 99%, 1.500 μm through obtaining after 80%) 1.500 μm of electromagnetic radiation, as shown in Figure 9.
More than, embodiments of the present invention are illustrated.But the present invention is not limited to above embodiment.It is all Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention Within the scope of shield.

Claims (10)

1. a kind of device for non-linear optical, which is characterized in that the device for non-linear optical includes boracite crystal.
2. device according to claim 1, which is characterized in that carried out to the boracite crystal period polarized；
Preferably, the boracite crystal is cut perpendicular to the direction c；
Preferably, to the face+c plated film of the boracite crystal, by the face crystal+c carry out photoetching, corrosion and etc. produce Polarized electrode structure；
Preferably, corroded with the right face+c of HF acid, obtained at the hole of boracite crystal；And upper one is covered on the face+c Layer SiO2Dielectric layer；
Preferably, corrosion depth is 5-20 μm；
Preferably, the SiO2Dielectric layer with a thickness of 15-25 μm；
Preferably, through alignment, development to SiO2Dielectric layer is corroded, and the metal part of polarized electrode structure is exposed.
Preferably, the face-c of boracite crystal plate with+c face thickness and the consistent metal electrode of material, as negative electricity Pole；
Preferably, Al, Cr, Au or other alloy materials are selected from for the metal of plated film；
Preferably, the plated film with a thickness of 60~100nm；
Preferably, the boracite crystal is carried out period polarized using periodic polarized electrode.
3. device according to claim 2, which is characterized in that the device for non-linear optical be by least it is a branch of enter radio Magnetic radiation generates output radiation of at least a branch of frequency different from incidence electromagnetic radiation after passing through at least one piece of boracite crystal Device.
4. device according to claim 1-3, which is characterized in that the working principle of the optical device are as follows: two Shu Bochang is λ1And λ2Incidence electromagnetic radiation, by the boracite crystal, generation wavelength is respectively λ1、λ2And λ3Output electricity Magnetic radiation, it is λ that required wavelength is obtained after optical filter3Outgoing electromagnetic radiation, wherein the wavelength of electromagnetic radiation meets relationship:
5. device according to claim 3 or 4, which is characterized in that the wave-length coverage of the incidence electromagnetic radiation is 0.155 ~4.0 μm, preferably 0.155~2.0 μm.
6. device according to claim 1-5, which is characterized in that the device for non-linear optical can be realized again Frequency exports.
7. device according to claim 1-6, which is characterized in that the device for non-linear optical can be realized and Frequency exports.
8. device according to claim 1-7, which is characterized in that the device for non-linear optical can be realized difference Frequency exports.
9. device according to claim 1-8, which is characterized in that the device for non-linear optical can be realized light Parameter generates output.
10. a kind of method for handling electromagnetic radiation, which is characterized in that including one or more electromagnetic radiation are used claim The described in any item device for non-linear optical processing of 1-9.
Preferably, it wherein after device for non-linear optical processing, generates at least a branch of frequency and is different from incidence electromagnetic radiation Output electromagnetic radiation.
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