CN108950505A - Preparation method with strong ferromagnetic CaB6 film - Google Patents

Preparation method with strong ferromagnetic CaB6 film Download PDF

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CN108950505A
CN108950505A CN201810888661.0A CN201810888661A CN108950505A CN 108950505 A CN108950505 A CN 108950505A CN 201810888661 A CN201810888661 A CN 201810888661A CN 108950505 A CN108950505 A CN 108950505A
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layers
sputtering
ndfeb
cab6
layer
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CN108950505B (en
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康丽纳
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GUANGDONG GUANHAO HIGH-TECH CO LTD
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Quanzhou Kang Xin Chemical Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/361—Coatings of the type glass/metal/inorganic compound/metal/inorganic compound/other
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering

Abstract

The invention discloses a kind of preparation methods with strong ferromagnetic CaB6 film, include the following steps: to prepare glass substrate；Using CuGe alloy as target, CuGe layers are deposited on a glass substrate, wherein CuGe layers with a thickness of 15-30nm；Using CoPbMn alloy as target, CoPbMnO layers are deposited on CuGe layer, wherein CoPbMnO layers with a thickness of 20-40nm；Using DyZn alloy as target, DyZn layers are deposited on CoPbMnO layer, wherein DyZn layers with a thickness of 10-30nm；Using NdFeB as target, the first NdFeB layers are deposited on DyZn layer, wherein the first NdFeB layers with a thickness of 20-40nm；Using PrZn alloy as target, PrZn layers are deposited on the first NdFeB layer, wherein PrZn layers with a thickness of 5-10nm；Using NdFeB as target, the 2nd NdFeB layers are deposited on PrZn layer, wherein the 2nd NdFeB layers with a thickness of 10-20nm；And using CaB6 as target, CaB6 layers are deposited on the 2nd NdFeB layer, wherein CaB6 layers with a thickness of 30-50nm.Preparation method of the invention improves the saturation magnetization of material entirety.

Description

Preparation method with strong ferromagnetic CaB6 film
Technical field
The present invention relates to information functional material fields, especially with regard to a kind of system with strong ferromagnetic CaB6 film Preparation Method.
Background technique
Boride has the performances such as high rigidity and high-melting-point, and chemical property is stablized, and can be used for fire resisting, grinding and superconductor Deng with critical role in modern industry.Six calcium borides (CAB6) also have than electricity not only with the denominator of boride Hinder constant, a certain range thermal expansion value be zero, the good characteristics such as high neutron absorption coefficient and low electronic work function, frequently as work Antioxidant, deoxidier in the production of industry copper alloy and the neutron-absorbing in nuclear industry and protective materials etc..From D.P.Young High temperature weak ferromagnetism is found in the CaB6 for mixing La, Many researchers occur this by sample experiments or theoretical modeling to explore The reason of kind phenomenon.Since ferromagnetism is very sensitive to lattice constant and crystal structure, so under study for action it has also been found that mixing europium (Eu), also there is ferromagnetism in gadolinium (Gd) and the CaB6 of thorium.Ferromagnetic element is typically all to contain unfilled 3d, 4f or 5f shell Transition metal element, and do not include magnetic transition metal impurity in CaB6, it is generated magnetic to be referred to as d0 ferromagnetism.By It can not be explained with previous electron theory in this abnormal ferromagnetism of CaB6, so more and more people has been attracted to carry out phase The research of pass.So that CaB6 film become it is a kind of it is newer there is ferromagnetic material, and due to the resistivity of CaB6 itself It is higher, so CaB6 thin-film material is expected to become a kind of novel soft magnetic materials
The information disclosed in the background technology section is intended only to increase the understanding to general background of the invention, without answering When being considered as recognizing or imply that the information constitutes the prior art already known to those of ordinary skill in the art in any form.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation methods with strong ferromagnetic CaB6 film, can overcome existing There is the shortcomings that technology.
To achieve the above object, the present invention provides a kind of preparation methods with strong ferromagnetic CaB6 film, including Following steps: prepare glass substrate；Using CuGe alloy as target, CuGe layers are deposited on a glass substrate, wherein CuGe thickness degree For 15-30nm；Using CoPbMn alloy as target, CoPbMnO layers are deposited on CuGe layer, wherein CoPbMnO layers with a thickness of 20- 40nm；Using DyZn alloy as target, DyZn layers are deposited on CoPbMnO layer, wherein DyZn layers with a thickness of 10-30nm；With NdFeB is target, and the first NdFeB layers are deposited on DyZn layer, wherein the first NdFeB layers with a thickness of 20-40nm；It is closed with PrZn Gold is target, PrZn layers is deposited on the first NdFeB layer, wherein PrZn layers with a thickness of 5-10nm；Using NdFeB as target, Deposition the 2nd NdFeB layers on PrZn layer, wherein the 2nd NdFeB layers with a thickness of 10-20nm；And using CaB6 as target, second CaB6 layers are deposited on NdFeB layer, wherein CaB6 layers with a thickness of 30-50nm.
In a preferred embodiment, wherein the nominal formula of CuGe alloy is Cu100-xGex, x=8-10, and Wherein, depositing CuGe layers on a glass substrate is carried out with following condition: using radio-frequency magnetron sputter method, sputtering atmosphere is argon Gas, sputtering pressure 2-3Pa, sputtering power 100-150W, sputtering voltage 300-500V, underlayer temperature are 300-400 DEG C.
In a preferred embodiment, wherein the nominal formula of CoPbMn alloy target material is CoaPbbMn100-a-b, a =3-6, b=20-40, and wherein, depositing CoPbMnO layers on CuGe layer is carried out with following condition: being penetrated using reaction Frequency magnetron sputtering method, sputtering atmosphere are oxygen, sputtering pressure 5-6Pa, sputtering power 300-500W, sputtering voltage 400- 600V, underlayer temperature are 300-400 DEG C.
In a preferred embodiment, depositing DyZn layers on CoPbMnO layer is carried out with following condition: being used and is penetrated Frequency magnetron sputtering method, sputtering atmosphere are argon gas, sputtering pressure 3-5Pa, sputtering power 150-200W, sputtering voltage 200- 300V, underlayer temperature are 400-500 DEG C.
In a preferred embodiment, NdFeB layers of deposition the first is carried out with following condition on DyZn layer: being used Radio-frequency magnetron sputter method, sputtering atmosphere are argon gas, sputtering pressure 3-5Pa, sputtering power 150-250W, and sputtering voltage is 200-300V, underlayer temperature are 150-300 DEG C.
In a preferred embodiment, depositing PrZn layers on the first NdFeB layer is carried out with following condition: being used Radio-frequency magnetron sputter method, sputtering atmosphere are argon gas, sputtering pressure 3-5Pa, sputtering power 50-100W, and sputtering voltage is 150-200V, underlayer temperature are 250-350 DEG C.
In a preferred embodiment, NdFeB layers of deposition the 2nd is carried out with following condition on PrZn layer: being used Radio-frequency magnetron sputter method, sputtering atmosphere are argon gas, sputtering pressure 3-5Pa, sputtering power 150-250W, and sputtering voltage is 200-300V, underlayer temperature are 500-600 DEG C.
In a preferred embodiment, depositing CaB6 layers on the 2nd NdFeB layer is carried out with following condition: being used Radio-frequency magnetron sputter method, sputtering atmosphere are argon gas, sputtering pressure 3-5Pa, sputtering power 100-150W, and sputtering voltage is 100-150V, underlayer temperature are 250-350 DEG C.
Compared with prior art, the present invention has the advantage that CaB6 film, which is, a kind of newer has ferromagnetic material Material, and since the resistivity of CaB6 itself is higher, so CaB6 thin-film material is expected to become a kind of novel soft magnetic materials.At present Difficulty encountered in the research of CaB6 thin-film material is: by conventional method (doping changes preparation process, heat treatment) It is difficult to further increase the saturation magnetization of CaB6 film, and lesser saturation magnetization means to reach quite big Small signal strength, it is necessary to increase the size of thin-film material, namely must make device bigger can meet magnetic recording Requirement.In order to overcome the drawbacks of the prior art, the invention proposes a kind of saturated magnetization of completely new increase CaB6 film is strong Spend and reduce the coercitive method of CaB6 material, method of the invention by increasing the film layer number of plies, under CaB6 layers plating its Its magnetosphere come pass through magnetic coupling interaction improve the CaB6 layers of saturation magnetization showed.Structure of the invention both remained The high resistivity (because CaB6 is located at material surface) of CaB6, and the saturation magnetization of material entirety is improved, it achieves good Good technical effect.
Detailed description of the invention
Fig. 1 is preparation method flow chart according to an embodiment of the present invention.
Fig. 2 is schematic diagram of product structure according to an embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail, it is to be understood that guarantor of the invention Shield range is not limited by the specific implementation.
Unless otherwise explicitly stated, otherwise in entire disclosure and claims, term " includes " or its change Changing such as "comprising" or " including " etc. will be understood to comprise stated element or component, and not exclude other members Part or other component parts.
Fig. 1 is preparation method flow chart according to an embodiment of the present invention.Fig. 2 is according to an embodiment of the present invention Schematic diagram of product structure.As shown, preparation method of the invention includes the following steps:
Step 101: preparing glass substrate 201；
Step 102: using CuGe alloy as target, on a glass substrate deposit CuGe layer 202, wherein CuGe layers with a thickness of 15-30nm；
Step 103: using CoPbMn alloy as target, CoPbMnO layer 203 is deposited on CuGe layer, wherein CoPbMnO layers With a thickness of 20-40nm；
Step 104: using DyZn alloy as target (wherein, in DyZn alloy the atomic ratio of Dy and Zn for 1:1), DyZn layer 204 is deposited on CoPbMnO layer, wherein DyZn layers with a thickness of 10-30nm；
Step 105: using NdFeB as target (NdFeB target has forming for common NdFeB permanent-magnet material), in DyZn On layer deposit the first NdFeB layer 205, wherein the first NdFeB layers with a thickness of 20-40nm；
Step 106: using PrZn alloy as target (wherein, in PrZn alloy the atomic ratio of Pr and Zn for 1:1), first PrZn layer 206 is deposited on NdFeB layer, wherein PrZn layers with a thickness of 5-10nm；
Step 107: using NdFeB as target, the 2nd NdFeB layer 207 is deposited on PrZn layer, wherein the 2nd NdFeB thickness Degree is 10-20nm；And
Step 108: using CaB6 as target, on the 2nd NdFeB layer deposit CaB6 layer 208, wherein CaB6 layers with a thickness of 30-50nm。
Embodiment 1
Preparation method with strong ferromagnetic CaB6 film includes the following steps: to prepare glass substrate；With CuGe alloy For target, CuGe layers are deposited on a glass substrate, wherein CuGe layers with a thickness of 15nm；Using CoPbMn alloy as target, in CuGe CoPbMnO layers are deposited on layer, wherein CoPbMnO layers with a thickness of 20nm；Using DyZn alloy as target, deposited on CoPbMnO layers DyZn layers, wherein DyZn layers with a thickness of 10nm；Using NdFeB as target, NdFeB layers of the deposition the first on DyZn layer, wherein the One NdFeB layers with a thickness of 20nm；Using PrZn alloy as target, PrZn layers are deposited on the first NdFeB layer, wherein PrZn thickness Degree is 5nm；Using NdFeB as target, the 2nd NdFeB layers are deposited on PrZn layer, wherein the 2nd NdFeB layers with a thickness of 10nm；With CaB6 is target, CaB6 layers is deposited on the 2nd NdFeB layer, wherein CaB6 layers with a thickness of 30nm.Wherein, the name of CuGe alloy Adopted chemical formula is Cu100-xGex, x=8, and wherein, depositing CuGe layers on a glass substrate is carried out with following condition: being adopted With radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 2Pa, sputtering power 100W, sputtering voltage 300V, Underlayer temperature is 300 DEG C.Wherein, the nominal formula of CoPbMn alloy target material is CoaPbbMn100-a-b, a=3, b=20, and Wherein, depositing CoPbMnO layers on CuGe layer is carried out with following condition: being used reactive radio frequency magnetron sputtering method, is sputtered gas Atmosphere is oxygen, and sputtering pressure 5Pa, sputtering power 300W, sputtering voltage 400V, underlayer temperature is 300 DEG C.? Depositing DyZn layers on CoPbMnO layer is carried out with following condition: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, is splashed Pressure of emanating is 3Pa, sputtering power 150W, sputtering voltage 200V, and underlayer temperature is 400 DEG C.First is deposited on DyZn layers NdFeB layers are carried out with following condition: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, and sputtering pressure 3Pa splashes Penetrating power is 150W, and sputtering voltage 200V, underlayer temperature is 150 DEG C.Depositing PrZn layers on the first NdFeB layer is with as follows What condition carried out: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 3Pa, sputtering power 50W, sputtering Voltage is 150V, and underlayer temperature is 250 DEG C.NdFeB layers of deposition the 2nd is carried out with following condition on PrZn layer: being used and is penetrated Frequency magnetron sputtering method, sputtering atmosphere are argon gas, sputtering pressure 3Pa, sputtering power 150W, sputtering voltage 200V, substrate Temperature is 500 DEG C.Depositing CaB6 layers on the 2nd NdFeB layer is carried out with following condition: being used radio-frequency magnetron sputter method, is splashed Atmosphere of emanating is argon gas, and sputtering pressure 3Pa, sputtering power 100W, sputtering voltage 100V, underlayer temperature is 250 DEG C.
Embodiment 2
Preparation method with strong ferromagnetic CaB6 film includes the following steps: to prepare glass substrate；With CuGe alloy For target, CuGe layers are deposited on a glass substrate, wherein CuGe layers with a thickness of 30nm；Using CoPbMn alloy as target, in CuGe CoPbMnO layers are deposited on layer, wherein CoPbMnO layers with a thickness of 40nm；Using DyZn alloy as target, deposited on CoPbMnO layers DyZn layers, wherein DyZn layers with a thickness of 30nm；Using NdFeB as target, NdFeB layers of the deposition the first on DyZn layer, wherein the One NdFeB layers with a thickness of 40nm；Using PrZn alloy as target, PrZn layers are deposited on the first NdFeB layer, wherein PrZn thickness Degree is 10nm；Using NdFeB as target, the 2nd NdFeB layers are deposited on PrZn layer, wherein the 2nd NdFeB layers with a thickness of 20nm； Using CaB6 as target, CaB6 layers are deposited on the 2nd NdFeB layer, wherein CaB6 layers with a thickness of 50nm.Wherein, CuGe alloy Nominal formula is Cu100-xGex, x=10, and wherein, depositing CuGe layers on a glass substrate is carried out with following condition: Using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 3Pa, sputtering power 150W, and sputtering voltage is 500V, underlayer temperature are 400 DEG C.Wherein, the nominal formula of CoPbMn alloy target material is CoaPbbMn100-a-b, a=6, b= 40, and wherein, depositing CoPbMnO layers on CuGe layer is carried out with following condition: reactive radio frequency magnetron sputtering method is used, Sputtering atmosphere is oxygen, and sputtering pressure 6Pa, sputtering power 500W, sputtering voltage 600V, underlayer temperature is 400 DEG C.? Depositing DyZn layers on CoPbMnO layer is carried out with following condition: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, is splashed Pressure of emanating is 5Pa, sputtering power 200W, sputtering voltage 300V, and underlayer temperature is 500 DEG C.First is deposited on DyZn layers NdFeB layers are carried out with following condition: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, and sputtering pressure 5Pa splashes Penetrating power is 250W, and sputtering voltage 300V, underlayer temperature is 300 DEG C.Depositing PrZn layers on the first NdFeB layer is with as follows What condition carried out: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, and sputtering pressure 5Pa, sputtering power 100W splash Radio pressure is 200V, and underlayer temperature is 350 DEG C.NdFeB layers of deposition the 2nd is carried out with following condition on PrZn layer: being used Radio-frequency magnetron sputter method, sputtering atmosphere are argon gas, sputtering pressure 5Pa, sputtering power 250W, sputtering voltage 300V, lining Bottom temperature is 600 DEG C.Depositing CaB6 layers on the 2nd NdFeB layer is carried out with following condition: radio-frequency magnetron sputter method is used, Sputtering atmosphere is argon gas, and sputtering pressure 5Pa, sputtering power 150W, sputtering voltage 150V, underlayer temperature is 350 DEG C.
Embodiment 3
Preparation method with strong ferromagnetic CaB6 film includes the following steps: to prepare glass substrate；With CuGe alloy For target, CuGe layers are deposited on a glass substrate, wherein CuGe layers with a thickness of 20nm；Using CoPbMn alloy as target, in CuGe CoPbMnO layers are deposited on layer, wherein CoPbMnO layers with a thickness of 25nm；Using DyZn alloy as target, deposited on CoPbMnO layers DyZn layers, wherein DyZn layers with a thickness of 15nm；Using NdFeB as target, NdFeB layers of the deposition the first on DyZn layer, wherein the One NdFeB layers with a thickness of 25nm；Using PrZn alloy as target, PrZn layers are deposited on the first NdFeB layer, wherein PrZn thickness Degree is 6nm；Using NdFeB as target, the 2nd NdFeB layers are deposited on PrZn layer, wherein the 2nd NdFeB layers with a thickness of 15nm；With CaB6 is target, CaB6 layers is deposited on the 2nd NdFeB layer, wherein CaB6 layers with a thickness of 35nm.Wherein, the name of CuGe alloy Adopted chemical formula is Cu100-xGex, x=8.5, and wherein, depositing CuGe layers on a glass substrate is carried out with following condition: Using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 2.5Pa, sputtering power 110W, and sputtering voltage is 320V, underlayer temperature are 320 DEG C.Wherein, the nominal formula of CoPbMn alloy target material is CoaPbbMn100-a-b, a=4, b= 25, and wherein, depositing CoPbMnO layers on CuGe layer is carried out with following condition: reactive radio frequency magnetron sputtering method is used, Sputtering atmosphere is oxygen, and sputtering pressure 5.5Pa, sputtering power 350W, sputtering voltage 450V, underlayer temperature is 320 DEG C. Depositing DyZn layers on CoPbMnO layer is carried out with following condition: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, Sputtering pressure is 3.5Pa, sputtering power 160W, sputtering voltage 220V, and underlayer temperature is 420 DEG C.It is deposited on DyZn layers First NdFeB layers be to be carried out with following condition: use radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, and sputtering pressure is 3.5Pa, sputtering power 180W, sputtering voltage 220V, underlayer temperature are 180 DEG C.PrZn layers are deposited on the first NdFeB layer It is to be carried out with following condition: uses radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 3.5Pa, sputtering power For 60W, sputtering voltage 160V, underlayer temperature is 260 DEG C.On PrZn layer deposition the 2nd NdFeB layers be with following condition into Capable: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, sputtering pressure 3.5Pa, sputtering power 180W, sputtering electricity Pressure is 220V, and underlayer temperature is 520 DEG C.Depositing CaB6 layers on the 2nd NdFeB layer is carried out with following condition: using radio frequency Magnetron sputtering method, sputtering atmosphere are argon gas, sputtering pressure 3.5Pa, sputtering power 110W, sputtering voltage 110V, substrate Temperature is 280 DEG C.
Embodiment 4
Preparation method with strong ferromagnetic CaB6 film includes the following steps: to prepare glass substrate；With CuGe alloy For target, CuGe layers are deposited on a glass substrate, wherein CuGe layers with a thickness of 25nm；Using CoPbMn alloy as target, in CuGe CoPbMnO layers are deposited on layer, wherein CoPbMnO layers with a thickness of 30nm；Using DyZn alloy as target, deposited on CoPbMnO layers DyZn layers, wherein DyZn layers with a thickness of 20nm；Using NdFeB as target, NdFeB layers of the deposition the first on DyZn layer, wherein the One NdFeB layers with a thickness of 30nm；Using PrZn alloy as target, PrZn layers are deposited on the first NdFeB layer, wherein PrZn thickness Degree is 7nm；Using NdFeB as target, the 2nd NdFeB layers are deposited on PrZn layer, wherein the 2nd NdFeB layers with a thickness of 15nm；With CaB6 is target, CaB6 layers is deposited on the 2nd NdFeB layer, wherein CaB6 layers with a thickness of 40nm.Wherein, the name of CuGe alloy Adopted chemical formula is Cu100-xGex, x=9, and wherein, depositing CuGe layers on a glass substrate is carried out with following condition: being adopted With radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 2.5Pa, sputtering power 120W, and sputtering voltage is 400V, underlayer temperature are 350 DEG C.Wherein, the nominal formula of CoPbMn alloy target material is CoaPbbMn100-a-b, a=5, b= 30, and wherein, depositing CoPbMnO layers on CuGe layer is carried out with following condition: reactive radio frequency magnetron sputtering method is used, Sputtering atmosphere is oxygen, and sputtering pressure 5.5Pa, sputtering power 400W, sputtering voltage 500V, underlayer temperature is 350 DEG C. Depositing DyZn layers on CoPbMnO layer is carried out with following condition: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, Sputtering pressure is 4Pa, sputtering power 180W, sputtering voltage 250V, and underlayer temperature is 450 DEG C.Is deposited on DyZn layers One NdFeB layers is carried out with following condition: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, sputtering pressure 4Pa, Sputtering power is 200W, and sputtering voltage 250V, underlayer temperature is 200 DEG C.Depositing PrZn layers on the first NdFeB layer is with such as What lower condition carried out: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, and sputtering pressure 4Pa, sputtering power 80W splash Radio pressure is 180V, and underlayer temperature is 300 DEG C.NdFeB layers of deposition the 2nd is carried out with following condition on PrZn layer: being used Radio-frequency magnetron sputter method, sputtering atmosphere are argon gas, sputtering pressure 4Pa, sputtering power 200W, sputtering voltage 250V, lining Bottom temperature is 550 DEG C.Depositing CaB6 layers on the 2nd NdFeB layer is carried out with following condition: radio-frequency magnetron sputter method is used, Sputtering atmosphere is argon gas, and sputtering pressure 4Pa, sputtering power 120W, sputtering voltage 120V, underlayer temperature is 300 DEG C.
Embodiment 5
Preparation method with strong ferromagnetic CaB6 film includes the following steps: to prepare glass substrate；With CuGe alloy For target, CuGe layers are deposited on a glass substrate, wherein CuGe layers with a thickness of 25nm；Using CoPbMn alloy as target, in CuGe CoPbMnO layers are deposited on layer, wherein CoPbMnO layers with a thickness of 35nm；Using DyZn alloy as target, deposited on CoPbMnO layers DyZn layers, wherein DyZn layers with a thickness of 25nm；Using NdFeB as target, NdFeB layers of the deposition the first on DyZn layer, wherein the One NdFeB layers with a thickness of 35nm；Using PrZn alloy as target, PrZn layers are deposited on the first NdFeB layer, wherein PrZn thickness Degree is 9nm；Using NdFeB as target, the 2nd NdFeB layers are deposited on PrZn layer, wherein the 2nd NdFeB layers with a thickness of 18nm；With CaB6 is target, CaB6 layers is deposited on the 2nd NdFeB layer, wherein CaB6 layers with a thickness of 45nm.Wherein, the name of CuGe alloy Adopted chemical formula is Cu100-xGex, x=9.5, and wherein, depositing CuGe layers on a glass substrate is carried out with following condition: Using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 2.5Pa, sputtering power 140W, and sputtering voltage is 450V, underlayer temperature are 380 DEG C.Wherein, the nominal formula of CoPbMn alloy target material is CoaPbbMn100-a-b, a=5, b= 35, and wherein, depositing CoPbMnO layers on CuGe layer is carried out with following condition: reactive radio frequency magnetron sputtering method is used, Sputtering atmosphere is oxygen, and sputtering pressure 5.5Pa, sputtering power 450W, sputtering voltage 550V, underlayer temperature is 380 DEG C. Depositing DyZn layers on CoPbMnO layer is carried out with following condition: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, Sputtering pressure is 4.5Pa, sputtering power 180W, sputtering voltage 280V, and underlayer temperature is 480 DEG C.It is deposited on DyZn layers First NdFeB layers be to be carried out with following condition: use radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, and sputtering pressure is 4.5Pa, sputtering power 230W, sputtering voltage 280V, underlayer temperature are 280 DEG C.PrZn layers are deposited on the first NdFeB layer It is to be carried out with following condition: uses radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 4.5Pa, sputtering power For 90W, sputtering voltage 180V, underlayer temperature is 330 DEG C.On PrZn layer deposition the 2nd NdFeB layers be with following condition into Capable: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, sputtering pressure 4.5Pa, sputtering power 220W, sputtering electricity Pressure is 280V, and underlayer temperature is 580 DEG C.Depositing CaB6 layers on the 2nd NdFeB layer is carried out with following condition: using radio frequency Magnetron sputtering method, sputtering atmosphere are argon gas, sputtering pressure 4.5Pa, sputtering power 140W, sputtering voltage 140V, substrate Temperature is 330 DEG C.
Comparative example 1
The steps or parameter different from embodiment 1 are: not depositing CuGe layers on a glass substrate.
Comparative example 2
The steps or parameter different from embodiment 1 are: CoPbMnO layers are deposited not on CuGe layer.
Comparative example 3
The steps or parameter different from embodiment 1 are: DyZn layers are deposited not on CoPbMnO layer.
Comparative example 4
The steps or parameter different from embodiment 1 are: NdFeB layers of the deposition the 2nd not on PrZn layer.
Comparative example 5
The steps or parameter different from embodiment 1 are: CuGe layers with a thickness of 15-30nm.
Comparative example 6
The steps or parameter different from embodiment 1 are: CoPbMnO layers with a thickness of 20-40nm.
Comparative example 7
The steps or parameter different from embodiment 1 are: CaB6 layers with a thickness of 30-50nm.
Comparative example 8
The steps or parameter different from embodiment 1 are: the nominal formula of CuGe alloy is Cu100-xGex, x=15.
Comparative example 9
The steps or parameter different from embodiment 1 are: on a glass substrate deposit CuGe layers be with following condition into Capable: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, sputtering pressure 2.5Pa, sputtering power 200W, sputtering electricity Pressure is 200V, and underlayer temperature is 200 DEG C.
Comparative example 10
The steps or parameter different from embodiment 1 are: the nominal formula of CoPbMn alloy target material is CoaPbbMn100-a-b, a=2, b=10.
Comparative example 11
The steps or parameter different from embodiment 1 are: on CuGe layer deposit CoPbMnO layers be with following condition into Capable: reactive radio frequency magnetron sputtering method is used, sputtering atmosphere is oxygen, sputtering pressure 5Pa, sputtering power 250W, sputtering Voltage is 300V, and underlayer temperature is 250 DEG C.
Comparative example 12
The steps or parameter different from embodiment 1 are: on CoPbMnO layer deposit DyZn layers be with following condition into Capable: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, sputtering pressure 3Pa, sputtering power 250W, sputtering voltage For 400V, underlayer temperature is 600 DEG C.
Comparative example 13
The steps or parameter different from embodiment 1 are: NdFeB layers of deposition the first is with following condition on DyZn layer It carries out: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 3Pa, sputtering power 300W, sputtering electricity Pressure is 350V, and underlayer temperature is 350 DEG C.
Comparative example 14
The steps or parameter different from embodiment 1 are: depositing PrZn layers on the first NdFeB layer is with following condition It carries out: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 3Pa, sputtering power 150W, sputtering electricity Pressure is 250V, and underlayer temperature is 400 DEG C.
Comparative example 15
The steps or parameter different from embodiment 1 are: NdFeB layers of deposition the 2nd is with following condition on PrZn layer It carries out: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 3Pa, sputtering power 300W, sputtering electricity Pressure is 350V, and underlayer temperature is 450 DEG C.
Comparative example 16
The steps or parameter different from embodiment 1 are: depositing CaB6 layers on the 2nd NdFeB layer is with following condition It carries out: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 3Pa, sputtering power 200W, sputtering electricity Pressure is 200V, and underlayer temperature is 200 DEG C.
(unit is emu/cm to the saturation magnetization of testing example 1-5 and comparative example 1-163) and coercivity (list Position is Oe), test is carried out using VSM well known in the art, and test result is shown in Table 1.
Table 1
The aforementioned description to specific exemplary embodiment of the invention is in order to illustrate and illustration purpose.These descriptions It is not wishing to limit the invention to disclosed precise forms, and it will be apparent that according to the above instruction, can much be changed And variation.The purpose of selecting and describing the exemplary embodiment is that explaining specific principle of the invention and its actually answering With so that those skilled in the art can be realized and utilize a variety of different exemplary implementation schemes of the invention and Various chooses and changes.The scope of the present invention is intended to be limited by claims and its equivalents.

Claims (8)

1. a kind of preparation method with strong ferromagnetic CaB6 film, it is characterised in that: described that there is strong ferromagnetic CaB6 The preparation method of film includes the following steps:
Prepare glass substrate；
Using CuGe alloy as target, CuGe layers are deposited in the glass substrate, wherein described CuGe layers with a thickness of 15-30nm；
Using CoPbMn alloy as target, on the CuGe layer deposit CoPbMnO layers, wherein described CoPbMnO layers with a thickness of 20-40nm；
Using DyZn alloy as target, DyZn layers are deposited on the CoPbMnO layer, wherein described DyZn layers with a thickness of 10- 30nm；
Using NdFeB as target, the first NdFeB layers are deposited on the DyZn layer, wherein the described first NdFeB layers with a thickness of 20- 40nm；
Using PrZn alloy as target, PrZn layers are deposited on the first NdFeB layer, wherein described PrZn layers with a thickness of 5- 10nm；
Using NdFeB as target, the 2nd NdFeB layers are deposited on the PrZn layer, wherein the described 2nd NdFeB layers with a thickness of 10- 20nm；And
Using CaB6 as target, CaB6 layers are deposited on the 2nd NdFeB layer, wherein described CaB6 layers with a thickness of 30-50nm.
2. the preparation method with strong ferromagnetic CaB6 film according to claim 1, it is characterised in that: wherein, institute The nominal formula for stating CuGe alloy is Cu100-xGex, x=8-10, and wherein, CuGe layers are deposited in the glass substrate It is to be carried out with following condition: uses radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, sputtering pressure 2-3Pa, sputtering power For 100-150W, sputtering voltage 300-500V, underlayer temperature is 300-400 DEG C.
3. the preparation method with strong ferromagnetic CaB6 film according to claim 1, it is characterised in that: wherein, institute The nominal formula for stating CoPbMn alloy target material is CoaPbbMn100-a-b, a=3-6, b=20-40, and wherein, described Depositing CoPbMnO layers on CuGe layer is carried out with following condition: using reactive radio frequency magnetron sputtering method, sputtering atmosphere is oxygen Gas, sputtering pressure 5-6Pa, sputtering power 300-500W, sputtering voltage 400-600V, underlayer temperature are 300-400 DEG C.
4. the preparation method with strong ferromagnetic CaB6 film according to claim 1, it is characterised in that: described Depositing DyZn layers on CoPbMnO layer is carried out with following condition: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, is splashed Pressure of emanating is 3-5Pa, sputtering power 150-200W, sputtering voltage 200-300V, and underlayer temperature is 400-500 DEG C.
5. the preparation method with strong ferromagnetic CaB6 film according to claim 1, it is characterised in that: described NdFeB layers of deposition the first is carried out with following condition on DyZn layer: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, Sputtering pressure is 3-5Pa, sputtering power 150-250W, sputtering voltage 200-300V, and underlayer temperature is 150-300 DEG C.
6. the preparation method with strong ferromagnetic CaB6 film according to claim 1, it is characterised in that: described the Depositing PrZn layers on one NdFeB layer is carried out with following condition: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, is splashed Pressure of emanating is 3-5Pa, sputtering power 50-100W, sputtering voltage 150-200V, and underlayer temperature is 250-350 DEG C.
7. the preparation method with strong ferromagnetic CaB6 film according to claim 1, it is characterised in that: described NdFeB layers of deposition the 2nd is carried out with following condition on PrZn layer: radio-frequency magnetron sputter method is used, sputtering atmosphere is argon gas, Sputtering pressure is 3-5Pa, sputtering power 150-250W, sputtering voltage 200-300V, and underlayer temperature is 500-600 DEG C.
8. the preparation method with strong ferromagnetic CaB6 film according to claim 1, it is characterised in that: described the Depositing CaB6 layers on two NdFeB layers is carried out with following condition: using radio-frequency magnetron sputter method, sputtering atmosphere is argon gas, is splashed Pressure of emanating is 3-5Pa, sputtering power 100-150W, sputtering voltage 100-150V, and underlayer temperature is 250-350 DEG C.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1659304A (en) * 2002-05-31 2005-08-24 霍尼韦尔国际公司 Thin films and methods for forming thin films utilizing ECAE-targets
JP2006080379A (en) * 2004-09-10 2006-03-23 Sharp Corp Hetero crystal multilayer structure, metal paste transistor including the same, vertical cavity surface emitting laser, magnetoresistance film, and resonance tunnel diode
CN102867538A (en) * 2011-07-07 2013-01-09 三星电子株式会社 Method and system for providing a magnetic junction using half metallic ferromagnets
CN105374485A (en) * 2015-11-26 2016-03-02 宁波科星材料科技有限公司 Multi-layer composite magnet and preparation method thereof
CN106252503A (en) * 2015-06-15 2016-12-21 中国科学院物理研究所 Hyperfrequency spinning microwave oscillator based on antiferromagnet

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1659304A (en) * 2002-05-31 2005-08-24 霍尼韦尔国际公司 Thin films and methods for forming thin films utilizing ECAE-targets
JP2006080379A (en) * 2004-09-10 2006-03-23 Sharp Corp Hetero crystal multilayer structure, metal paste transistor including the same, vertical cavity surface emitting laser, magnetoresistance film, and resonance tunnel diode
CN102867538A (en) * 2011-07-07 2013-01-09 三星电子株式会社 Method and system for providing a magnetic junction using half metallic ferromagnets
CN106252503A (en) * 2015-06-15 2016-12-21 中国科学院物理研究所 Hyperfrequency spinning microwave oscillator based on antiferromagnet
CN105374485A (en) * 2015-11-26 2016-03-02 宁波科星材料科技有限公司 Multi-layer composite magnet and preparation method thereof

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