CN108950242A - A kind of preparation facilities of high purity zinc - Google Patents

A kind of preparation facilities of high purity zinc Download PDF

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Publication number
CN108950242A
CN108950242A CN201810750773.XA CN201810750773A CN108950242A CN 108950242 A CN108950242 A CN 108950242A CN 201810750773 A CN201810750773 A CN 201810750773A CN 108950242 A CN108950242 A CN 108950242A
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China
Prior art keywords
partition
sections
preparation facilities
condenser
facilities according
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CN201810750773.XA
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Chinese (zh)
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CN108950242B (en
Inventor
彭寿
马立云
潘锦功
殷新建
周亮
郑林
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CNBM (CHENGDU) OPTOELECTRONIC MATERIAL Co Ltd
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CNBM (CHENGDU) OPTOELECTRONIC MATERIAL Co Ltd
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Publication of CN108950242A publication Critical patent/CN108950242A/en
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B19/00Obtaining zinc or zinc oxide
    • C22B19/32Refining zinc
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/02Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

The present invention discloses a kind of preparation facilities of high purity zinc, comprising: pedestal, three sections of partition distilling apparatus, vacuum gland, the shell and quartz ampoule being set on the pedestal;The shell is arranged around the quartz tube device;The quartz ampoule upper end opening, three sections of partition distilling apparatus described in the quartz ampoule inner containment and is connected to three sections of partition distilling apparatus;The vacuum gland seals the upper end opening of the quartz ampoule;Three sections of partition distilling apparatus include sequentially coaxially being arranged from the bottom to top: lower part condenser, first partition, middle part condenser, second partition and upper condensator and third partition;The middle part condenser is that semicircular groove is formed by connecting by two sections, and described two sections are formed with a chamber resettling between semicircular groove;The raising preparation efficiency can also prevent graphite-pipe crack damage in reclaiming process, extend service life of equipment.

Description

A kind of preparation facilities of high purity zinc
Technical field
The present invention relates to the preparation technical fields of high purity zinc, and in particular to a kind of preparation facilities of high purity zinc.
Background technique
With the raising of metal material purity, chemistry, electricity, optomagnetic performance and mechanical property etc. are available substantially Enhancing, high pure metal material sufficiently present the intrinsic physical and chemical performance of metal.As important basic material, in recent years with The development of the advanced science technologies such as electronic information, aerospace, atomic energy and photoelectron precision instrument, improve metal material Purity to obtain new performance, it has also become the important directions of modern material industry development.To some degree, High Purity Gold Belong to the basis that material may be considered modern high technology development.
A kind of deep processed product of the high purity zinc as metallic zinc is a kind of novel multipurpose functional material, is widely used in It prepares semiconducting compound, fluorescent material, reducing agent or alloy, ceramic material, precision casting, electronic refrigerating elements, help Solvent and reactor liquid cooled carrier etc..The preparation method of high purity zinc mainly has electrolysis method, vacuum distillation method, zone refining Method and weight rectification method etc., vacuum distillation method is a kind of method of relatively common purification high purity zinc at present.The vacuum distillation of zinc Method is metallic zinc and foreign metal (such as Cd, Pb, Fe, Cu, Sn, As) boiling point and saturated vapour pressure using at the same temperature Between difference, volatilization and condensation process in, strict control vapo(u)rizing temperature, to remove the mesh that impurity has reached separating-purifying 's.
Existing vacuum distillation plant is mainly sealed in quartz ampoule and is carried out, and condensation portion uses high purity graphite column (impurity Less than 10-5) it is processed into cylindrical shape, equipment operation is heavy, and operating efficiency is lower.
Summary of the invention
In view of this, this application provides the preparation facilities for being a kind of high purity zinc, the raising preparation efficiency can also be prevented Only graphite-pipe crack damage in reclaiming process extends service life of equipment.
In order to solve the above technical problems, technical solution provided by the invention is a kind of preparation facilities of high purity zinc, comprising: bottom Seat, three sections of partition distilling apparatus, vacuum gland, the shell and quartz ampoule being set on the pedestal;The shell is around described Quartz tube device setting;The quartz ampoule upper end opening, three sections of partition distilling apparatus described in the quartz ampoule inner containment and with Three sections of partition distilling apparatus connection;The vacuum gland seals the upper end opening of the quartz ampoule;Three sections of partitions Distilling apparatus includes sequentially coaxially being arranged from the bottom to top: lower part condenser, first partition, middle part condenser, second partition and Upper condensator and third partition;The middle part condenser is that semicircular groove is formed by connecting by two sections, described two Section is formed with a chamber resettling between semicircular groove.
Preferably, the material of the lower part condenser, the middle part condenser and the upper condensator is graphite;It is described Lower part condenser is raw material kettle, and the upper condensator is graphite-pipe.
Preferably, the length ratio of the lower part condenser, the middle part condenser and the upper condensator is 1:2:1.
Preferably, the first partition, the second partition and the third partition are graphite plate.
Preferably, the first partition and the second partition are porous plate, and the aperture of the first partition is greater than described The hole of second partition.
Preferably, the hole count of the first partition is less than the hole count of the second partition.
Preferably, the third partition is equipped with through-hole.
Preferably, the middle part upper end of condenser bore is greater than lower end bore.
Preferably, described two sections are that semicircular fluted external surface is equipped with card slot.
Preferably, described two sections are that semicircular groove medium position outer surface is equipped with the card slot.
Preferably, described two sections are that semicircular groove junction is equipped with holding section, and described two sections are half Circular groove is connected together.
Preferably, the holding section is intermeshing convex engaging portion.
Preferably, described two sections are that semicircular groove is fixed by clip.
Preferably, the clip is set at the card slot.
Preferably, the clip includes the fastener of clip ontology and the fixed clip ontology.Preferably, described
Clip includes the multiple fasteners to form the clip ontology and the fixed clip ontology of annulus.
Preferably, the vacuum gland connects vacuum pump, and the vacuum pump simultaneously passes through the vacuum gland and the stone
Connection inside English pipe.
Preferably, the graphite is high purity graphite, and impurity is less than 10-5
Compared with prior art, detailed description are as follows by the application:
The preparation facilities of high purity zinc provided by the invention uses three sections of partition distilling apparatus, entire three sections of partitions distillation dress Guarantee to carry out in the quartz ampoule of sealing, middle part condenser uses two sections for semicircular groove, and upper and lower ends bore is not Together, described two sections are that semicircular groove medium position outer surface is equipped with the card slot.In vacuum distillation, two sections It links together for semicircular groove;After vacuum distillation, separating two sections is that the connection of semicircular groove is i.e. desirable Product high purity zinc is evaporated in vacuo out.It is more convenient using the device operating process, physical strength and time can be not only saved, is mentioned High preparation efficiency can also prevent graphite-pipe crack damage in reclaiming process, extend service life of equipment.It can also promote and be used for The purification of metals of other suitable vacuum distillations.
The preparation facilities of high purity zinc provided by the invention is suitable for vacuum distillation method and prepares high purity zinc, under same temperature, gold Belong to the difference of zinc and foreign metal (such as Cd, Pb, Fe, Cu, Sn, As) between boiling point and saturated vapour pressure, is volatilizing and condensing In the process, strict control vapo(u)rizing temperature, to remove the purpose that impurity has reached separating-purifying.Specifically, provided by the invention Three sections of partition distilling apparatus described in the preparation facilities of high purity zinc include sequentially coaxially being arranged from the bottom to top: lower part condenser, First partition, middle part condenser, second partition and upper condensator and third partition;It can be to lower part condenser, middle part condenser With upper condensator segmentally heating, heating temperature can control.And in the vacuum distillation process of metallic zinc, point of most of heavy metals From being easier, but the more difficult removing of Pb, Fe, Cu and Cd.The fusing point (419.6 DEG C) and boiling point (917 DEG C) of zinc are relatively low, benefit Separation between carrying out individual element with this feature, the preparation facilities of high purity zinc of the present invention can effectively realization body metallic zinc with it is miscellaneous The separation of matter cadmium metal, lead.Low boiling impurity Cd volatility is preferable, is enriched in the lower the top of temperature, volatilizable to be enriched in Upper condensator, the volatility such as high-boiling-point impurity Pb, Cu, Fe are poor, are enriched in the higher bottom of temperature, condensable to be enriched in In lower part condenser for containing metallic zinc raw material, and product high purity zinc is enriched with and is condensate in after then passing through vacuum distillation a few hours Interlude, i.e. high purity zinc are enriched in middle part condenser;Therefore, the preparation facilities of high purity zinc of the present invention can take lower distillation temperature Degree, and three-stage stepwise distillation is carried out, realize the separation and enrichment of impurity.Further, it adopts for every section of three-stage stepwise distillation With condensation partition of different shapes, especially, the first partition and the second partition are porous plate, the first partition Aperture is greater than the hole of the second partition, convenient for the metallic zinc volatility of raw material in the condenser of lower part;Because the top top condenses Device is volatile foreign metal, and bottom lower part condenser is not volatile foreign metal, and the aperture of the first partition is big In the hole of the second partition, also achieves and the separated impurity with enrichment is stopped to enter middle part condenser, to promote metal The purification efficiency of zinc.
Further, the middle part upper end of condenser bore is greater than lower end bore, takes out vacuum distillation product high purity zinc.
Further, described two sections are that semicircular groove is connected together, and improve the airtightness of middle part condenser.
Further, described two sections are that semicircular groove is connected together, and are fixed by clip;Further, institute Stating clip includes the multiple fasteners to form the clip ontology and the fixed clip ontology of annulus;After vacuum distillation, pine Opening clip and separating two sections is that the connection of semicircular groove can be taken off vacuum distillation product high purity zinc.
Further, the clip is set at the card slot, and described two sections are that semicircular fluted external surface is equipped with Card slot, described two sections are after semicircular groove medium position outer surface is equipped with card slot vacuum distillation, to unclamp Clip can be taken off vacuum distillation product high purity zinc.It is more convenient using the device operating process, it can not only save body Power and time improve preparation efficiency, can also prevent graphite-pipe crack damage in reclaiming process, extend service life of equipment.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with It obtains other drawings based on these drawings.
Fig. 1 be the present invention provides high purity zinc preparation facilities schematic diagram;
Fig. 2 be the present invention provides high purity zinc preparation facilities in three sections of partition distilling apparatus schematic diagrames;
Fig. 3 be the present invention provides high purity zinc preparation facilities in the middle part of condenser top view;
Fig. 4 be the present invention provides high purity zinc preparation facilities in the middle part of condenser cross-sectional view;
Fig. 5 be the present invention provides high purity zinc preparation facilities in the middle part of condenser main sectional view;
Fig. 6 be the present invention provides high purity zinc preparation facilities in the middle part of upper end of condenser bore be greater than lower end bore three Section partition distilling apparatus schematic diagram.
Specific embodiment
It is right combined with specific embodiments below in order to make those skilled in the art more fully understand technical solution of the present invention The present invention is described in further detail.
As shown in Fig. 1~5, the present invention provides a kind of preparation facilities of high purity zinc, comprising: pedestal 1, three sections of partition distillations Device 2, vacuum gland 3, the shell 4 and quartz ampoule 5 being set on the pedestal;The shell 4 surrounds 5 device of quartz ampoule Setting;5 upper end opening of quartz ampoule, three sections of partition distilling apparatus 2 described in 5 inner containment of quartz ampoule and with described three sections Partition distilling apparatus 2 is connected to;The vacuum gland 3 seals 5 upper end openings of the quartz ampoule;Three sections of partitions distillation dress Setting 2 includes sequentially coaxially being arranged from the bottom to top: lower part condenser 21, first partition 22, middle part condenser 23, second partition 24 With upper condensator 25 and third partition 26;The middle part condenser 23 by two sections be semicircular groove 231 connect and At described two sections are formed with a chamber resettling between semicircular groove 231.
As shown in figs. 1 to 6, in a specific embodiment of the invention, the lower part condenser 21, the middle part condenser 23 Material with the upper condensator 25 is graphite;The lower part condenser 21 is raw material kettle, and the upper condensator 25 is stone Mo Guan.The length ratio of the lower part condenser 21, the middle part condenser 23 and the upper condensator 25 is 1:2:1.
The first partition 22, the second partition 24 and the third partition 26 are graphite plate.The first partition 22 It is porous plate with the second partition 24, the aperture of the first partition 22 is greater than the hole of the second partition 24.Described first The hole count of partition 22 is less than the hole count of the second partition 24.The third partition 26 is equipped with through-hole.
The 23. upper end bore of middle part condenser is greater than lower end bore.Described two sections are in semicircular groove 231 Portion position outer surface is equipped with the card slot 232.Described two sections are that semicircular 231 junction of groove is equipped with holding section 233, described two sections are that semicircular groove 231 is connected together.The holding section 233 is intermeshing concave-convex engaging Portion.Described two sections are that semicircular groove 231 is fixed by clip.The clip is set at the card slot 232.The card Hoop includes the fastener of clip ontology and the fixed clip ontology.The clip includes clip ontology and the fixation to form annulus Multiple fasteners of the clip ontology.
The vacuum gland connects vacuum pump, the vacuum pump and by connecting inside the vacuum gland and the quartz ampoule It is logical.The graphite is high purity graphite, and impurity is less than 10-5
High purity zinc process is prepared, low boiling impurity Cd volatility is preferable, is enriched in the lower the top of temperature, volatilizable richness Upper condensator 25 is combined in, the volatility such as high-boiling-point impurity Pb, Cu, Fe are poor, are enriched in the higher bottom of temperature, condensable It is enriched in the lower part condenser 21 for containing metallic zinc raw material, and product high purity zinc then passes through richness after vacuum distillation a few hours Collection is condensate in interlude, i.e. high purity zinc is enriched in middle part condenser 23.
The above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair Limitation of the invention, protection scope of the present invention should be defined by the scope defined by the claims..For the art For those of ordinary skill, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these change It also should be regarded as protection scope of the present invention into retouching.

Claims (10)

1. a kind of preparation facilities of high purity zinc characterized by comprising pedestal, three sections of partition distilling apparatus, vacuum gland, if The shell and quartz ampoule being placed on the pedestal;The shell is arranged around the quartz tube device;It opens the quartz ampoule upper end Mouthful, it three sections of partition distilling apparatus described in the quartz ampoule inner containment and is connected to three sections of partition distilling apparatus;It is described true Pneumatics lid seals the upper end opening of the quartz ampoule;Three sections of partition distilling apparatus include sequentially coaxially being arranged from the bottom to top : lower part condenser, first partition, middle part condenser, second partition and upper condensator and third partition;The middle part condensation Device is that semicircular groove is formed by connecting by two sections, and described two sections are formed with an accommodating between semicircular groove Chamber.
2. preparation facilities according to claim 1, which is characterized in that the lower part condenser, the middle part condenser and The material of the upper condensator is graphite;The lower part condenser is raw material kettle, and the upper condensator is graphite-pipe.
3. preparation facilities according to claim 1, which is characterized in that the lower part condenser, the middle part condenser and The length ratio of the upper condensator is 1:2:1.
4. preparation facilities according to claim 1, which is characterized in that the first partition, the second partition and described Third partition is graphite plate.
5. preparation facilities according to claim 1, which is characterized in that the first partition and the second partition are porous Plate, the aperture of the first partition are greater than the hole of the second partition.
6. preparation facilities according to claim 1, which is characterized in that the third partition is equipped with through-hole.
7. preparation facilities according to claim 1, which is characterized in that the middle part upper end of condenser bore is greater than lower port Diameter.
8. preparation facilities according to claim 1, which is characterized in that described two sections are semicircular fluted external surface Equipped with card slot.
9. preparation facilities according to claim 1, which is characterized in that described two sections are semicircular groove junction It is equipped with holding section, described two sections are that semicircular groove is connected together.
10. preparation facilities according to claim 1, which is characterized in that described two sections are that semicircular groove passes through Clip is fixed.
CN201810750773.XA 2018-07-10 2018-07-10 Preparation device of high-purity zinc Active CN108950242B (en)

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Application Number Priority Date Filing Date Title
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CN108950242B CN108950242B (en) 2021-04-06

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113649531A (en) * 2021-08-16 2021-11-16 江西中晶新材料有限公司 Production method of 5N zinc ingot
CN115724411A (en) * 2022-12-02 2023-03-03 成都中建材光电材料有限公司 Preparation method of high-purity tellurium
CN115724411B (en) * 2022-12-02 2024-07-16 成都中建材光电材料有限公司 Preparation method of high-purity tellurium

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2690414Y (en) * 2003-11-27 2005-04-06 四川鑫炬矿业资源开发股份有限公司 Vacuum distilling device for refining high purity metal
CN102605194A (en) * 2012-03-16 2012-07-25 葫芦岛锌业股份有限公司 Preparation method of high purity zinc by vacuum distillation
CN103184349A (en) * 2011-12-29 2013-07-03 广东先导稀材股份有限公司 High purity zinc preparation device and method
CN104513905A (en) * 2015-01-08 2015-04-15 成都汉普高新材料有限公司 High-purity antimony vacuum distillation equipment and preparation process thereof
CN105537404A (en) * 2016-01-20 2016-05-04 池州市容大电气有限公司 Simple cylinder flanging die
CN106381467A (en) * 2016-09-21 2017-02-08 铜陵市铜创电子科技有限公司 Metalized film vacuum coating device provided with novel evaporation drum
CN206781086U (en) * 2017-05-31 2017-12-22 谷刚 A kind of oil extraction element of tree peony

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2690414Y (en) * 2003-11-27 2005-04-06 四川鑫炬矿业资源开发股份有限公司 Vacuum distilling device for refining high purity metal
CN103184349A (en) * 2011-12-29 2013-07-03 广东先导稀材股份有限公司 High purity zinc preparation device and method
CN102605194A (en) * 2012-03-16 2012-07-25 葫芦岛锌业股份有限公司 Preparation method of high purity zinc by vacuum distillation
CN104513905A (en) * 2015-01-08 2015-04-15 成都汉普高新材料有限公司 High-purity antimony vacuum distillation equipment and preparation process thereof
CN105537404A (en) * 2016-01-20 2016-05-04 池州市容大电气有限公司 Simple cylinder flanging die
CN106381467A (en) * 2016-09-21 2017-02-08 铜陵市铜创电子科技有限公司 Metalized film vacuum coating device provided with novel evaporation drum
CN206781086U (en) * 2017-05-31 2017-12-22 谷刚 A kind of oil extraction element of tree peony

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113649531A (en) * 2021-08-16 2021-11-16 江西中晶新材料有限公司 Production method of 5N zinc ingot
CN115724411A (en) * 2022-12-02 2023-03-03 成都中建材光电材料有限公司 Preparation method of high-purity tellurium
CN115724411B (en) * 2022-12-02 2024-07-16 成都中建材光电材料有限公司 Preparation method of high-purity tellurium

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