CN108946739B - Efficient purification method and device for silicon material - Google Patents
Efficient purification method and device for silicon material Download PDFInfo
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Abstract
The invention relates to the field of solar grade polysilicon manufacture, in particular to a high-efficiency purification method and device for a silicon material. The device of the invention is provided with a smelting crucible; the casting port of the smelting crucible is provided with an inclination angle with a low inner wall and a high outer wall; a rotary observation window is arranged on the furnace body; when in use, the energy value of the independent energy module accounts for 10-20% of the total power proportion of the electron beam, and the independent energy module irradiates the position where the silicon raw materials are accumulated and the casting nozzle. According to the invention, the independent energy module is extracted through controlling the electron beam scanning mode in the process of smelting the polysilicon by the electron beam, so that specific irradiation can be carried out on a specific area, and the electron beam smelting efficiency is improved.
Description
Technical Field
The invention relates to the field of solar grade polysilicon manufacture, in particular to a high-efficiency purification method and device for a silicon material.
Background
The solar grade polysilicon prepared by electron beam melting is used as an important process component in the production flow of preparing the solar grade polysilicon by a metallurgical method, and can efficiently remove volatile impurities in silicon. Under the traditional technological condition, the electron beam smelting process is simpler, the electron beam irradiates the silicon material under the high-power condition, the silicon material is melted and smelted, and the energy consumption in the whole production process is higher, so that the electron beam smelting process also becomes an important limiting factor for limiting the large-scale and wide-spread application of the electron beam smelting polysilicon.
The patent 201510252743.2 discloses an electron beam zone polysilicon melting device and a method for removing impurities, which are characterized in that the temperature is gradually changed on the left side of an irradiation zone due to the movement of an electron beam, so that directional solidification of silicon liquid on the left side is realized, but the irradiation position and irradiation power of the electron beam cannot be adjusted arbitrarily according to actual needs in the operation process, so that the device is not flexible, and the risk that the silicon liquid is solidified at the position of a casting nozzle of a melting crucible to block the silicon liquid exists, and further research and optimization are needed.
Disclosure of Invention
The invention aims to solve the technical problems that the irradiation position and irradiation power of electron beams cannot be adjusted arbitrarily according to actual needs in the operation process in the prior art, the flexibility is not enough, and the risk that silicon liquid solidifies at the casting port of a smelting crucible to block the silicon liquid exists, so that further research and optimization are needed.
In order to solve the problems, the invention provides a high-efficiency purifying method and device for silicon materials, which can extract a single energy module by controlling an electron beam scanning mode in the process of smelting polysilicon by using an electron beam, and can specifically irradiate a specific area to improve the smelting efficiency of the electron beam.
In order to achieve the above purpose, the invention is realized by the following technical scheme: a device for efficiently purifying silicon materials comprises a smelting crucible; the casting port of the smelting crucible is provided with an inclination angle with a low inner wall and a high outer wall; a rotary observation window is arranged on the furnace body.
Further, the inclination angle of the casting nozzle of the smelting crucible is 30-45 degrees.
Further, a smelting crucible overturning shaft is connected below the smelting crucible and is connected with an external overturning hydraulic system control shaft through a dynamic sealing structure, and overturning of the crucible is driven through rotation of the control shaft.
Further, as shown in fig. 4-6, the cooling water path of the smelting crucible is divided into two paths, namely a side wall water path and a bottom water path, the side wall water path adopts a spiral water path structure, cooling water enters from a water inlet at the bottom and flows out from a water outlet at the top, the bottom plate of the smelting crucible adopts a circulating water cooling structure, and the side wall and the bottom are respectively cooled by adopting the single path water path, so that a good cooling effect is achieved, and meanwhile, the processing difficulty of the integral structure of the crucible is reduced.
Further, as shown in fig. 1, the device for efficiently purifying the silicon material further comprises a feeding mechanism, a furnace body, an electron gun, a smelting crucible and a solidification crucible; the feeding structure is connected to the upper end of the furnace body, a rotary observation window is arranged on the furnace body, one side of the furnace body is connected with the vacuum suction structure, the electron gun is arranged above the furnace body and emits electron beams downwards, and the electron gun is connected with the vacuum suction structure; the electron beam irradiation side in the furnace body is a smelting crucible, the rear end of the smelting crucible is positioned below a feeding port of a feeding mechanism, and the liquid guide port end is positioned above an opening of the solidification crucible; the solidification crucible is arranged at the bottom of the furnace body.
Further, the vacuum suction structure at one side of the furnace body is a mechanical pump I, a Roots pump I and a diffusion pump which are sequentially connected, the end part of the diffusion pump is connected with the furnace body, and air in the furnace chamber is pumped away to construct a vacuum environment required by electron beam melting; the vacuum suction structure at one side of the electron gun is a molecular pump, a Roots pump II and a mechanical pump II which are sequentially connected, and the end part of the molecular pump is connected with the electron gun to construct a vacuum environment required by emitting electron beams; one side of the furnace body is provided with an inflation valve.
The method for high-efficiency purification of silicon material adopts the above-mentioned equipment, and has independent energy module, and for the independent and adjustable irradiation zone formed after extracting partial energy of electron beam, the energy value of independent energy module is 10% -20% of total power of electron beam. The method specifically comprises the following steps:
the first step: 1000kg of clean silicon raw material after cleaning and drying, wherein the content of P in the silicon raw material is 10-50ppm and the content of O is 5-100ppm, and the massive silicon raw material is respectively filled into a feeding mechanism of an electron beam melting furnace;
and a second step of: closing furnace, introducing cooling circulating water into the equipment, and respectively vacuumizing the furnace chamber to 5×10 by using electron beam melting furnace chamber vacuum system and electron gun vacuum system -2 Vacuum pumping to below Pa and 5×10 in electron gun -3 Under Pa, vacuum condition required by electron beam melting is achieved;
and a third step of: preheating an electron gun, setting the filament current of the electron gun to be 800-1000mA, preheating the electron gun for 10-15min, synchronizing, starting a feeding mechanism in the process of preheating the electron gun, conveying 50kg of silicon raw material into a smelting crucible, and conveying the silicon raw material into the smelting crucible to be piled in a conical shape;
fourth step: after the electron gun is preheated, closing an electron gun preheating mode, starting an electron gun irradiation mode, setting the irradiation power to be 150-200kW, emitting electron beams to irradiate silicon raw materials in a smelting crucible, setting the energy value of an independent energy module to be 10-20% (accounting for the total power proportion of the electron beams, the initial position of the independent energy module is positioned at the center of the smelting crucible), irradiating a silicon raw material enrichment area in the smelting crucible 9, observing the actual position of the independent energy module through a rotary observation window, adjusting the irradiation position of the independent energy module through an independent energy module control system to irradiate the position with more silicon raw materials, observing the melting state of the silicon materials in the smelting crucible at any time in the whole melting process of the silicon raw materials, and adjusting the irradiation position of the independent energy module at any time (the irradiation position of the independent energy module can move in the whole smelting crucible but cannot exceed the area of the smelting crucible, and the condition is locked through the control system), so as to accelerate the melting efficiency of the silicon raw materials;
fifth step: after the silicon raw material in the smelting crucible is completely melted, a liquid silicon molten pool is formed, an independent energy module irradiation mode is closed, the independent energy module disappears, the electron beam irradiation power is kept at 150-200kw, the silicon molten pool 8 is smelted for 10-20min, and volatile impurities in the silicon molten pool are removed;
sixth step: after the silicon molten pool is smelted for 10-20min, volatile impurity elements in the silicon molten pool are effectively removed, restarting an independent energy module irradiation mode, setting the energy of the independent energy module to be 10% -15%, adjusting the irradiation position of the independent energy module through an independent energy module control system and a rotary observation window, adjusting the position of the independent energy module to the position of a casting port of a smelting crucible, starting a smelting crucible turnover mechanism, rotating a smelting crucible turnover shaft, driving the smelting crucible to rotate, enabling silicon liquid of the silicon molten pool to flow to the casting port of the smelting crucible, enabling the silicon liquid to flow into a solidification crucible through the casting port, and rapidly cooling and solidifying the silicon liquid in the solidification crucible to form solid silicon;
in the pouring process of the silicon liquid, the silicon liquid is easy to condense at the position of the casting nozzle, the silicon liquid is blocked to flow, the silicon liquid is not smooth to flow, even the silicon liquid overflows out of the casting nozzle, certain potential safety hazards exist, the position of the casting nozzle is irradiated through an independent energy module, the energy of the position of the casting nozzle is increased, the solidification quantity of the silicon liquid at the position of the casting nozzle is greatly reduced, and the smooth running of the casting process is ensured.
Meanwhile, in order to prevent the direct irradiation of the electron beam to the casting nozzle of the smelting crucible and damage to the smelting crucible when the electron beam irradiates the casting nozzle, the casting nozzle is designed to be of a 30-45-degree inclined angle structure, so that silicon liquid exists at the casting nozzle all the time in the process, and the direct irradiation of the electron beam to the smelting crucible is avoided.
Seventh step: after the silicon liquid in the melting crucible is completely poured into the solidification crucible, closing an independent energy module irradiation mode, closing an electron gun, and resetting the melting crucible to an initial horizontal position;
eighth step: and conveying 50kg of silicon raw materials into the smelting crucible again through the feeding mechanism, and repeating the processes from the fourth step to the seventh step to melt, smelt and cast the silicon raw materials.
Ninth step: and after the silicon materials in the feeding mechanism are completely smelted, closing the electron gun system, and cooling the equipment and the solid silicon.
Tenth step: and (5) opening the furnace to take out the melted solid silicon ingot.
The invention has the beneficial effects that:
the method is characterized in that an independent energy module scanning mode is adopted in the process of smelting polycrystalline silicon by an electron beam, the independent energy module is introduced in the process of smelting polycrystalline silicon by the electron beam, the energy and the irradiation position of the independent energy module are adjustable, high-energy irradiation is carried out on a solid silicon material enrichment area in a silicon material melting stage through the control of the irradiation position, the melting efficiency of the silicon material is accelerated, the melting time is shortened, and the melting time of the silicon material is shortened from 10min to 7min; meanwhile, in the pouring stage of the silicon liquid, the energy module is controlled to irradiate the casting port of the smelting crucible, so that the silicon liquid is prevented from being solidified at the casting port of the smelting crucible to block the silicon liquid, the production time is reduced from 22h to 20h, the total energy consumption is reduced by 8%, and the production safety is improved.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a graph of the individual energy modules of the present invention from the melting stage to the casting stage.
FIG. 3 is a side cross-sectional view of a melting crucible of the present invention;
FIG. 4 is a front cross-sectional view of a melting crucible of the present invention;
FIG. 5 is a side wall water-cooling structure diagram of the melting crucible of the present invention;
FIG. 6 is a bottom water-cooled block diagram of a melting crucible of the present invention;
in the figure, an electron gun 1, a molecular pump 2, a Roots pump II 3, a mechanical pump II 4, a furnace body 5, an electron beam 6, a casting nozzle 7, a silicon molten pool 8, a smelting crucible 9, a water inlet 91, a water outlet 92, a solidification crucible 10, a silicon liquid 11, solid silicon 12, a smelting crucible turning shaft 13, a mechanical pump I14, a Roots pump I15, a diffusion pump 16, an inflation valve 17, a rotary observation window 18, a silicon raw material 19, a feeding mechanism 20 and an independent energy module 21.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1:
as shown in fig. 3 to 4, a device for efficiently purifying silicon materials is provided with a smelting crucible 9, wherein a casting nozzle 7 of the smelting crucible 9 is provided with an inclination angle with a low inner wall and a high outer wall; the furnace body 5 is provided with a rotary observation window 18.
The inclination angle of the smelting crucible is 30-45 degrees. The numerical value is obtained by combining electron beam smelting characteristics and the cooling capacity optimization of the water-cooled copper crucible, and the effect is optimal.
The lower part of the smelting crucible is connected with a smelting crucible overturning shaft 13, which is connected with a control shaft of an external overturning hydraulic system through a dynamic sealing structure, and the overturning of the crucible is driven through the rotation of the control shaft.
As shown in fig. 1, the device for efficiently purifying the silicon material comprises a feeding mechanism 20, a furnace body 5, an electron gun 1, a smelting crucible 9 and a solidification crucible 10; the feeding structure 20 is connected to the upper end of the furnace body 5, one side of the furnace body 5 is connected with the vacuum suction structure, the electron gun 1 is arranged above the feeding structure, the electron beam 6 is emitted downwards, and the electron gun 1 is connected with the vacuum suction structure; the electron beam 6 irradiates the melting crucible 9 in the furnace body 5, the rear end of the melting crucible 9 is positioned below a feeding port of the feeding mechanism 20, and a liquid guide port end is positioned above an opening of the solidification crucible 10; the solidification crucible 10 is arranged at the bottom of the furnace body 5.
The vacuum suction structure at one side of the furnace body 5 comprises a mechanical pump I14, a Roots pump I15 and a diffusion pump 16 which are sequentially connected, wherein the end part of the diffusion pump is connected with the furnace body to pump air in the furnace chamber away, so as to construct a vacuum environment required by electron beam melting; the vacuum suction structure at one side of the electron gun 1 is a molecular pump 2, a Roots pump II 3 and a mechanical pump II 4 which are sequentially connected, and the end part of the molecular pump is connected with the electron gun 1 to construct a vacuum environment required by emitting electron beams; one side of the furnace body 5 is provided with an inflation valve 17.
A method for efficiently purifying silicon material adopts the equipment, which is provided with an independent energy module and is an independent adjustable irradiation area formed after extracting partial energy of electron beams; the energy value of the independent energy module accounts for 10% -20% of the total power of the electron beam, the energy value of other scanning areas can be reduced when the proportion is too large, the capability of maintaining the molten state of the molten pool is weakened, and the effect of setting the independent energy module cannot be achieved when the proportion is too small. The method specifically comprises the following steps:
the first step: 1000kg of clean silicon raw material after cleaning and drying, wherein the content of P in the silicon raw material is 10-50ppm and the content of O is 5-100ppm, and the massive silicon raw material 19 is respectively filled into a feeding mechanism 20 of an electron beam melting furnace;
and a second step of: closing furnace, introducing cooling circulating water into the equipment, and respectively vacuumizing the furnace chamber to 5×10 by using electron beam melting furnace chamber vacuum system and electron gun 1 vacuum system -2 Vacuum-pumping the interior of the electron gun 1 to 5×10 under Pa -3 Under Pa, vacuum condition required by electron beam melting is achieved;
and a third step of: preheating the electron gun 1, setting the filament current of the electron gun 1 to 800-1000mA, preheating the electron gun 1 for 10-15min, and synchronously starting a feeding mechanism 20 to convey 50kg of silicon raw material into a smelting crucible 9 in the process of preheating the electron gun 1, wherein the silicon raw material is conveyed into the smelting crucible to be piled in a conical shape;
fourth step: after the preheating of the electron gun 1 is finished, closing a preheating mode of the electron gun 1, starting an irradiation mode of the electron gun 1, setting the irradiation power to be 150-200kW, emitting an electron beam 6 to irradiate the silicon raw material in the smelting crucible 9, setting the energy value of an independent energy module to be 10-20% (accounting for the total power proportion of the electron beam, the initial position of the independent energy module is positioned at the center of the smelting crucible), irradiating a silicon raw material enrichment area in the smelting crucible 9, observing the actual position of the independent energy module by rotating an observation window 18 according to the color of a scanning area, adjusting the irradiation position of the independent energy module by an independent energy module control system (an independent control system similar to the electron beam control system) to ensure that the independent energy module irradiates at a position with more silicon raw material accumulation, observing the melting state of the silicon raw material in the smelting crucible at any time in the whole melting process of the silicon raw material, and adjusting the irradiation position of the independent energy module (the independent energy module irradiation position can move in the whole smelting crucible but cannot exceed the smelting crucible area by the control system locking) at any time so as to accelerate the melting efficiency of the silicon raw material;
fifth step: after the silicon raw material 19 in the smelting crucible 9 is completely melted, a liquid silicon molten pool 8 is formed, an independent energy module irradiation mode is closed, the independent energy module disappears, the electron beam irradiation power is kept at 150-200kw, the silicon molten pool 8 is smelted for 10-20min, and volatile impurities in the silicon molten pool 8 are removed;
sixth step: after the silicon molten pool 8 is smelted for 10-20min, volatile impurity elements in the silicon molten pool are effectively removed, an independent energy module irradiation mode is restarted, the energy of the independent energy module is set to be 10% -15%, the irradiation position of the independent energy module is regulated through an independent energy module control system and a rotary observation window 18, the position of the independent energy module is regulated to the position of a casting nozzle 7 of a smelting crucible 9, a smelting crucible 9 turnover mechanism is started, a smelting crucible turnover shaft 13 rotates to drive the smelting crucible 9 to rotate, silicon liquid of the silicon molten pool 8 flows to the casting nozzle 7 of the smelting crucible 9, the silicon liquid flows into a solidification crucible 10 through the casting nozzle 7, and the silicon liquid 11 is quickly cooled and solidified in the solidification crucible 10 to form solid silicon 12;
in the pouring process of the silicon liquid, the silicon liquid is easy to condense at the position of the casting nozzle, the silicon liquid is blocked to flow, the silicon liquid is not smooth to flow, even the silicon liquid overflows out of the casting nozzle, certain potential safety hazards exist, the position of the casting nozzle is irradiated through an independent energy module, the energy of the position of the casting nozzle is increased, the solidification quantity of the silicon liquid at the position of the casting nozzle is greatly reduced, and the smooth running of the casting process is ensured.
Meanwhile, in order to prevent the direct irradiation of the electron beam to the casting nozzle of the smelting crucible and damage to the smelting crucible when the electron beam irradiates the casting nozzle, the casting nozzle is designed to be of a 30-45-degree inclined angle structure, so that silicon liquid always exists at the casting nozzle in the process, and the direct irradiation of the electron beam to the solidification crucible is avoided.
Seventh step: after the silicon liquid in the melting crucible 9 is completely poured into the solidification crucible 10, the irradiation mode of the independent energy module is closed, the electron gun is closed, and the melting crucible 9 is reset to the initial horizontal position;
eighth step: 50kg of the silicon raw material 19 is fed into the melting crucible 9 again by the feeding mechanism 20, and the fourth to seventh steps of the process are repeated to melt, smelt and cast the silicon raw material 19.
Ninth step: after the silicon materials in the feeding mechanism 20 are completely smelted, the electron gun system is closed, and the equipment and the solid silicon 12 are cooled.
Tenth part: and (5) opening the furnace to take out the melted solid silicon ingot.
Example 2:
as shown in fig. 4-6, the cooling water path of the smelting crucible 9 is divided into two paths, namely a side wall water path and a bottom water path, the side wall water path adopts a spiral water path structure, a single-path water path is adopted, cooling water enters from a water inlet 91 at the bottom and flows out from a water outlet 92 at the top, the bottom plate of the smelting crucible adopts a circulating water cooling structure, and the side wall and the bottom are respectively cooled by adopting the single-path water path, so that a good cooling effect is achieved, and meanwhile, the processing difficulty of the integral structure of the crucible is reduced.
The remainder was the same as in example 1.
Claims (1)
1. A method for efficiently purifying a silicon material is characterized by comprising the following steps: the device for efficiently purifying the silicon material is adopted and provided with a smelting crucible; the casting port of the smelting crucible is provided with an inclination angle with a low inner wall and a high outer wall; the dip angle of the casting nozzle of the smelting crucible is 30-45 degrees; the lower part of the smelting crucible is connected with a smelting crucible overturning shaft which is connected with an external overturning hydraulic system control shaft through a dynamic sealing structure; the cooling water path of the smelting crucible is divided into a side wall water path and a bottom water path, the side wall water path adopts a spiral water path structure, a single-path water path is adopted, cooling water enters from a water inlet at the bottom and flows out from a water outlet at the top, and a bottom plate of the smelting crucible adopts a circulating water cooling structure and adopts a single-path water path; comprises a feeding mechanism, a furnace body, an electron gun, a smelting crucible and a solidifying crucible; the feeding structure is connected to the upper end of the furnace body, a rotary observation window is arranged on the furnace body, one side of the furnace body is connected with the vacuum suction structure, the electron gun is arranged above the furnace body and emits electron beams downwards, and the electron gun is connected with the vacuum suction structure; the electron beam irradiation side in the furnace body is a smelting crucible, the rear end of the smelting crucible is positioned below a feeding port of a feeding mechanism, and the liquid guide port end is positioned above an opening of the solidification crucible; the solidification crucible is arranged at the bottom of the furnace body; the vacuum suction structure at one side of the furnace body is a mechanical pump I, a Roots pump I and a diffusion pump which are sequentially connected, the end part of the diffusion pump is connected with the furnace body, and air in the furnace chamber is pumped away to construct a vacuum environment required by electron beam melting; the vacuum suction structure at one side of the electron gun is a molecular pump, a Roots pump II and a mechanical pump II which are sequentially connected, and the end part of the molecular pump is connected with the electron gun to construct a vacuum environment required by the electron gun to emit electron beams; one side of the furnace body is provided with an inflation valve;
the device is provided with an independent energy module, and is a separate adjustable irradiation area formed after extracting partial energy of the electron beam; the energy value of the independent energy module accounts for 10% -20% of the total power proportion of the electron beam;
the independent energy module irradiates the position where the silicon raw materials are accumulated and the casting nozzle;
the method comprises the following steps:
the first step: 1000kg of clean silicon raw material after cleaning and drying, wherein the content of P in the silicon raw material is 10-50ppm and the content of O is 5-100ppm, and the massive silicon raw material is respectively filled into a feeding mechanism of an electron beam melting furnace;
and a second step of: closing furnace, introducing cooling circulating water into the equipment, and respectively vacuumizing the furnace chamber to 5×10 by using electron beam melting furnace chamber vacuum system and electron gun vacuum system -2 Vacuum pumping to below Pa and 5×10 in electron gun -3 Under Pa, vacuum condition required by electron beam melting is achieved;
and a third step of: preheating an electron gun, setting the filament current of the electron gun to be 800-1000mA, preheating the electron gun for 10-15min, synchronizing, starting a feeding mechanism in the process of preheating the electron gun, conveying 50kg of silicon raw material into a smelting crucible, and conveying the silicon raw material into the smelting crucible to be piled in a conical shape;
fourth step: after the electron gun is preheated, closing an electron gun preheating mode, starting an electron gun irradiation mode, setting the irradiation power to be 150-200kW, emitting electron beams to irradiate the silicon raw material in the smelting crucible, setting the energy value of an independent energy module to be 10-20% when the electron beam irradiation power reaches a set value, irradiating a silicon raw material enrichment region in the smelting crucible, observing the actual position of the independent energy module through a rotary observation window, adjusting the irradiation position of the independent energy module through an independent energy module control system to irradiate the position where the silicon raw material is more accumulated, observing the melting state of the silicon material in the smelting crucible at any time in the whole melting process of the silicon raw material, and adjusting the irradiation position of the independent energy module at any time to accelerate the melting efficiency of the silicon raw material;
fifth step: after the silicon raw material in the smelting crucible is completely melted, a liquid silicon molten pool is formed, an independent energy module irradiation mode is closed, the independent energy module disappears, the electron beam irradiation power is kept at 150-200kw, the silicon molten pool is smelted for 10-20min, and volatile impurities in the silicon molten pool are removed;
sixth step: after the silicon molten pool is smelted for 10-20min, volatile impurity elements in the silicon molten pool are effectively removed, restarting an independent energy module irradiation mode, setting the energy of the independent energy module to be 10% -15%, adjusting the irradiation position of the independent energy module through an independent energy module control system and a rotary observation window, adjusting the position of the independent energy module to the position of a casting port of a smelting crucible, starting a smelting crucible turnover mechanism, rotating a smelting crucible turnover shaft, driving the smelting crucible to rotate, enabling silicon liquid of the silicon molten pool to flow to the casting port of the smelting crucible, enabling the silicon liquid to flow into a solidification crucible through the casting port, and rapidly cooling and solidifying the silicon liquid in the solidification crucible to form solid silicon;
seventh step: after the silicon liquid in the melting crucible is completely poured into the solidification crucible, closing an independent energy module irradiation mode, closing an electron gun, and resetting the melting crucible to an initial horizontal position;
eighth step: conveying 50kg of silicon raw materials into the smelting crucible again through the feeding mechanism, repeating the processes from the fourth step to the seventh step, and melting, smelting and casting the silicon raw materials;
ninth step: after the silicon materials in the feeding mechanism are completely smelted, closing the electron gun system, and cooling the equipment and the solid silicon;
tenth step: and (5) opening the furnace to take out the melted solid silicon ingot.
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