CN108923257A - A kind of laser diode and preparation method thereof - Google Patents
A kind of laser diode and preparation method thereof Download PDFInfo
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- CN108923257A CN108923257A CN201810606843.4A CN201810606843A CN108923257A CN 108923257 A CN108923257 A CN 108923257A CN 201810606843 A CN201810606843 A CN 201810606843A CN 108923257 A CN108923257 A CN 108923257A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3219—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities explicitly Al-free cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3427—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in IV compounds
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Abstract
The invention discloses a kind of laser diode and preparation method thereof, the diode successively includes from the bottom to top：Lower electrode (1), substrate (2), lower clad (3), active layer (4), upper clad (5) and top electrode (6)；Preparation method is as follows：1) clad (3) under clean silicon substrate (2) upper surface deposition；2) active layer (4) are deposited in lower clad (3) upper surface；3) upper clad (5) are deposited in active layer (4) upper surface；4) one layer of metal layer is deposited in upper clad (5) upper surface, as top electrode (6)；One layer of metal layer is deposited in the lower surface of silicon substrate (2), as lower electrode (1).The laser diode has-eight phosphatization dipotassium hetero-junctions of boron nitride, not only shows higher efficiency, but also its stable structure, longevity of service, is not easy degradation failure, preparation process is simpler.
Description
Technical field
The present invention relates to a kind of laser diodes and preparation method thereof, more particularly to one kind to be based on-eight phosphatization two of boron nitride
The laser diode and preparation method thereof of potassium hetero-junctions, belongs to technical field of semiconductor device.
Background technique
Laser diode, also known as semiconductor laser are to use semiconductor material as the laser of operation material.Due to object
Difference in matter structure, the detailed process that variety classes generate laser is more special, compared with common lasers, laser diode
Have the advantages that high-efficient, small in size, the service life is long, be easy to modulate, most practical most important a kind of laser.It is using simple
Injection Current mode it is compatible with integrated circuit to pump its operating voltage and electric current, thus can single-chip integration therewith, and
Current-modulation can also directly be carried out with the up to frequency of GHz to obtain the output of the laser of High Speed Modulation.Due to these advantages, partly
Conductor diode laser laser communication, optical storage, optical circulator, laser printing, ranging and in terms of and obtain
It is widely applied.
Heterolaser is that active area is narrow direct band-gap semicondictor material, and limiting layer is wide bandgap semiconductor materials institute
The three-decker diode laser of formation.The birth of double heterojunection laser (DHL) widens available band constantly, line width and
Tuning performance steps up.The characteristics of its structure is to grown to undope and have compared with thin pillar between the material of weight doping
One thin layer of material, therefore the carrier injected is limited in the region (active area), thus inject less electric current just
The reversion that carrier number may be implemented generates very high injection efficiency, it is easy to accomplish and population inversion, gain greatly improve,
In addition, the temperature stable condition of laser is greatly improved, the characteristic temperature of quantum-well laser is very high, thus this is logical in optical fiber
It is most important in the application such as letter.
Most of laser diode is prepared by Si-Ge and III-V semiconductor, and different types of heterogeneous
The formation of knot (I, II and III type) would generally be limited by dislocation, and such dislocation would generally be when film be grown
At junction interface.Although this dislocation will increase the driving current of device, and the electric current can apply superlattices and nano wire
It is reduced when structure, but wants to avoid this dislocation still quite difficult during the preparation process.In view of such mesh
Mark, the two-dimensional material with atomic layer level thickness due to it is different from the superior property of body material and by the extensive research of people,
Such as graphene, MoS2 are the pole for preparing laser diode device since dangling bonds are not present on these two-dimensional material surfaces
Good material.
In general, two-dimensional semiconductor layer is stacked together by the interaction of Robert Van de Walle hereby power, therefore base
It is that will not generate lattice mismatch in the hetero-junctions of two-dimensional material, to generate the hetero-junctions surface of high quality.According to stack material
The difference of band gap and electron affinity, hetero-junctions are divided into three types：I type (straddle riding type), II type (staggered) and III (are staggered
Type) type.Tradition needs to obtain by certain preparation process based on the laser diode device of GaAs double heterojunction (II type)
To the n+/p+ hetero-junctions of high doped, and it can only operate under 623K temperature.BN is as a kind of wide bandgap semiconductor material
Material has high heat conductance, high resistivity, high mobility, low-k, high breakdown electric field, is able to achieve dimorphism doping and has
Good stability, it and diamond, SiC and GaN are collectively known as the third generation semiconductor material after Si, Ge and GaAs
Material, their common feature is that band gap is wide, suitable for making the electronic device used under extreme conditions；And BN then can be real
Existing dimorphism doping.Comprehensive apparently BN is the most excellent third generation semiconductor material of performance, can be used not only for preparation in high temperature, height
Frequently, the electronic device to work under the extreme conditions such as high-power, and have in terms of deep-UV light-emitting and detector and widely answer
Use prospect.
Heterojunction structure of the invention at laser diode, preparation process is simpler, just only by van der waals force
The semiconductor of two kinds of different materials can be connected to form hetero-junctions；Eight phosphatization dipotassium primitive unit cells are a kind of novel cubic lattices simultaneously
The stability of structure, the lattice is extremely strong, it is not easy to avalanche occur.This method preparation condition is more convenient, low in cost, can be effective
Progress electric energy to the conversion of luminous energy, the necessary operating current and driving power of laser can be effectively reduced, gain is significantly
It improves.
Summary of the invention
Technical problem：The object of the present invention is to provide a kind of laser diode and preparation method thereof, which contains
There is-eight phosphatization dipotassium hetero-junctions of boron nitride.
Technical solution：The present invention provides a kind of laser diode, which contains-eight phosphatization dipotassium of boron nitride
Hetero-junctions, structure include silicon substrate, the upper surface of silicon substrate are provided with lower clad, the upper surface of clad has been deposited with
Active layer, active layer upper surface are deposited with clad, upper clad upper surface evaporated metal layer as top electrode, served as a contrast in silicon
The lower surface at bottom is vapor-deposited with metal layer as lower electrode.
Wherein：
The left and right ends top of the laser diode is formed with light non-absorbing window, and its depth is greater than on electrode and wraps
The sum of coating and the thickness of active area.
The active layer is eight phosphatization dipotassium thin layers, is quantum well region, with a thickness of 30~50nm.
Wherein upper clad doping Si forms N-shaped boron nitride, and wherein the atom number ratio of Si and boron nitride is 10~20:
100；Lower clad (3) doping Be forms p-type boron nitride, and wherein the atom number ratio of Be and boron nitride is 30~40:100；And
The thickness of upper clad and lower clad is 30~50nm.
Upper clad, active layer and the lower clad constitutes I type double heterojunction, can effectively reduce laser
Necessary operating current and driving power, gain greatly improve.
The upper surface evaporated metal layer in upper clad is vapor-deposited with gold as top electrode, in the lower surface of silicon substrate
Belong to layer as lower electrode, metal layer is uniformly and aluminium layer of the purity greater than 95wt%, the size of top electrode are active level
Long-pending 10%~15%.
The present invention also provides a kind of preparation methods of laser diode, and this approach includes the following steps：
1) clad under clean silicon substrate upper surface deposition；
2) active layer is deposited in lower clad upper surface；
3) upper clad is deposited in active layer upper surface；
4) one layer of metal layer is deposited in upper clad upper surface, as top electrode；One layer is deposited in the lower surface of silicon substrate
Metal layer, as lower electrode.
Wherein：
Clean silicon substrate described in step 1) refers to and silicon wafer is successively used to propyl alcohol, dehydrated alcohol, deionized water ultrasonic wave
It after cleaning 15min and is dried with nitrogen, is put into quartz ampoule after the steam of progress deposition processes removal silicon chip surface described in obtaining
Clean silicon substrate.
The lower clad and upper clad are boron nitride pellicle, prepare and have by using chemical vapor deposition method
Body is as follows：With mass ratio for 1:1.7~1:2 B powder and ammonia is precursor, and is aided with MgO and FeO powder, 900~1200
1~1.5h is reacted under conditions of DEG C, the Si powder for adding specified amount later obtains N-shaped boron nitride, that is, clad, or addition is descended to refer to
Quantitative B powder obtains p-type boron nitride, i.e., upper clad, wherein the gross mass of MgO and FeO powder be B silty amount 20%~
30%.
Upper coating thickness is monoatomic layer to number atomic layer, and about 30~50nm has ultraviolet photoluminescence performance, passes through
Control reaction condition, the size and shape of adjustable product film.
It is as follows the step of lower clad upper surface deposits active layer described in step 2)：Active layer is that eight phosphatization dipotassiums are thin
Layer, eight phosphatization dipotassium primitive unit cells are a kind of novel cubic lattice structures, are made of eight phosphorus atoms and two potassium atoms, the lattice
Stability it is extremely strong, it is not easy to avalanche occurs, by mass ratio be 1:3.2~1:4 potassium and red phosphorus is prepared at 850~1000 DEG C
It obtains, is by mechanically pulling off to obtain eight phosphatization dipotassium thin layers of required thickness, and by chemical vapor deposition in boron nitride thin layer
Upper deposition eight phosphatization dipotassium thin layers, i.e. active layer, two kinds of materials combine to form boron nitride and eight phosphatization dipotassium hetero-junctions.
Beneficial effect：Compared with prior art, the present invention has the advantage that：
It is of the invention based on boron nitride/laser diodes of eight phosphatization dipotassium hetero-junctions, preparation process is simple, only by
Van der waals force can connect the semiconductor of two kinds of different materials to form hetero-junctions；Eight phosphatization dipotassium primitive unit cells are a kind of simultaneously
Novel cubic lattice structure is made of eight phosphorus atoms and two potassium atoms, and the stability of the lattice is extremely strong, it is not easy to occur
Avalanche, therefore the laser diode not only shows lower driving power and operating current, but also its stable structure, efficiency
Height is not easy degradation failure.
Detailed description of the invention
Fig. 1 is laser diode structure schematic diagram proposed by the present invention；
Fig. 2 is eight phosphatization dipotassium lattice structure schematic diagrames；
Fig. 3 is the band arrangement before-eight phosphatization dipotassium heterojunction of boron nitride；
Have in figure：Lower electrode 1, silicon substrate 2, lower clad 3, active layer 4, upper clad 5, top electrode 6 and light are non-absorbing
Window 7.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawings and examples.
Embodiment 1
It is of the present invention based on boron nitride/laser diodes (as shown in Figure 1) of eight phosphatization dipotassium hetero-junctions, for two dimension
Hetero junction laser diode, main includes following several parts：Lower electrode 1, silicon substrate 2, lower clad 3, active layer 4, upper packet
Coating 5 and top electrode 6 have a layer thickness to mix Si boron nitride thin layer for 40nm in the upper surface chemical vapor deposition of silicon substrate 2
(N-shaped, wherein the atom number ratio of Si and boron nitride is 10:100) i.e. lower clad 3, is deposited with a thickness on boron nitride layer
Degree is eight phosphatization dipotassium thin layers, that is, active layer 4 of 40nm, mixes Si boron nitride and eight phosphatization dipotassiums constitute heterojunction structure, Zhi Hou
Eight phosphatization dipotassium thin layer upper surfaces are deposited with a layer thickness again and mix Be boron nitride thin film layer (p-type, wherein Be and nitridation for 40nm
The atom number ratio of boron is 30:100) i.e. upper clad 5, mix Si boron nitride, eight phosphatization dipotassiums and mix Be boron nitride formed it is pair different
Matter junction structure is vapor-deposited with the aluminium that one layer of purity is greater than 95wt% in the upper surface of upper clad 5 and the lower surface of silicon substrate 2
Layer, respectively as top electrode 6 and lower electrode 1, and top electrode 6 accounts for the 10% of eight phosphatization dipotassium thin layer areas.
Light non-absorbing window 7 is formed on the left and right ends top of laser diode, and its depth is greater than on electrode and coats
Layer the sum of 5 and the thickness of active area 4.
It is heterogeneous to become two kinds of different conductive semiconductor materials, it combines to be formed by mutual van der waals force
I hetero-junctions, and the hetero-junctions can obtain the n+/p+ hetero-junctions of high concentration by simply adulterating process；Eight phosphatization dipotassiums
The hetero-junctions of (its lattice structure is as shown in Figure 2) and boron nitride composition, is the core of laser diode proposed by the present invention；
P-type boron nitride, eight phosphatization dipotassium K2P8, N-shaped boron nitride be all nanometer materials, and the forbidden bandwidth of boron nitride is far wider than eight phosphorus
Change dipotassium, the double heterojunction that three is formed has satisfactory electrical conductivity and mechanical property；In the heterojunction structure, eight phosphatization dipotassium institutes
Active layer be quantum well region, N-shaped boron nitride is used as acceptor portion, and eight phosphatization dipotassiums are as to body portion, eight phosphatization dipotassiums
Thin layer is transmitted to the surface of boron nitride thin layer by mechanical transfer process.
It is the band arrangement before-eight phosphatization dipotassium heterojunction of boron nitride shown in Fig. 3；The function of laser diode device
It is based on the electronics transfer between N-shaped and p-type semiconductor.Under thermal equilibrium state, the conduction band bottom of eight phosphatization dipotassiums and top of valence band are complete
In the full conduction band bottom and top of valence band for being included in boron nitride, to will form I type heterojunction semiconductor after contact；Due to nitridation
Biggish work function between boron and eight phosphatization dipotassiums, electrons and holes can be respectively on the boundaries of boron nitride and eight phosphatization dipotassium hetero-junctions
It is accumulated at face, to form the I type double heterojunction of high doped.
A kind of preparation method of laser diode, specifically includes following steps：
(1) substrate for preparing silicon wafer wipes base surface bulky grain dust using absorbent cotton；Again successively with propyl alcohol, anhydrous
Then ethyl alcohol, deionized water ultrasonic cleaning 15min are blown with washes of absolute alcohol base remained on surface solution 15min with nitrogen
It is dry, it is put into quartz ampoule and carries out deposition processes, obtain silicon substrate 2.
(2) boron nitride pellicle is prepared using chemical vapor deposition method on 2 surface of silicon substrate, it is specific as follows：With mass ratio
It is 1:2 B powder and ammonia is precursor, and is aided with MgO and FeO powder (gross mass is the 20% of B silty amount), at 900 DEG C
Under the conditions of react 1.5h, later add Si powder obtain N-shaped boron nitride (wherein the atom number ratio of Si and boron nitride be 10:100),
Control reaction condition obtains the lower clad 3 with a thickness of 40nm, which has ultraviolet photoluminescence performance；
It (3) is 1 by mass ratio:Eight phosphatization dipotassium thin layers are prepared in 4 potassium and red phosphorus at 850 DEG C, are shelled by machinery
From obtaining the eight phosphatization dipotassium thin layers of 40nm, and eight phosphatization dipotassium thin layers are deposited on lower clad 3 by chemical vapor deposition
Active layer 4 is obtained, lower clad 3 and active layer 4 combine to form I hetero-junctions by mutual van der waals force；
(4) on the basis of step (3), boron nitride pellicle is prepared using chemical vapor deposition method again：In eight phosphatizations
Dipotassium surface prepares boron nitride pellicle using same process：With mass ratio for 1:2 B powder and ammonia is precursor, and is aided with MgO
With FeO powder (gross mass is the 20% of B silty amount), 1.5h is reacted under conditions of 900 DEG C, Be powder is added later and obtains p-type
(wherein the atom number ratio of Be and boron nitride is 30 to boron nitride:100)；Control reaction condition obtains the upper cladding with a thickness of 40nm
Layer 5, lower clad 3, active layer 4 and upper clad 5 constitute boron nitride and eight phosphatization dipotassium double-heterostructures；
(5) under the above conditions, upper surface and silicon substrate 2 by the method for surface evaporation metal, in upper clad 5
Lower surface is deposited one layer uniformly and purity is greater than the aluminium layer of 95wt%, respectively as top electrode 6 and lower electrode 1, and top electrode 6
Account for the 10% of eight phosphatization dipotassium thin layer areas.
Embodiment 2
It is of the present invention based on boron nitride/laser diodes of eight phosphatization dipotassium hetero-junctions, be two-dimensional hetero-junction laser
Diode, main includes following several parts：It lower electrode 1, silicon substrate 2, lower clad 3, active layer 4, upper clad 5 and powers on
Pole 6, having a layer thickness in the upper surface chemical vapor deposition of silicon substrate 2 is that 30nm mixes Si boron nitride thin layer (N-shaped, wherein Si
Atom number ratio with boron nitride is 20:100) i.e. lower clad 3, is deposited with eight that a layer thickness is 30nm on boron nitride layer
Phosphatization dipotassium thin layer, that is, active layer 4, mixes Si boron nitride and eight phosphatization dipotassiums constitute heterojunction structure, thin in eight phosphatization dipotassiums later
It is that 30nm mixes Be boron nitride thin film layer (p-type, wherein the atom number of Be and boron nitride that layer upper surface is deposited with a layer thickness again
Than being 40:100) i.e. upper clad 5 mixes Si boron nitride, eight phosphatization dipotassiums and mixes Be boron nitride formation double-heterostructure, upper
The upper surface of clad 5 and the lower surface of silicon substrate 2 are vapor-deposited with one layer of purity greater than 95wt% aluminium layer, respectively as top electrode
6 and lower electrode 1, and top electrode 6 accounts for the 15% of eight phosphatization dipotassium thin layer areas.
Light non-absorbing window 7 is formed on the left and right ends top of laser diode, and its depth is greater than on electrode and coats
Layer the sum of 5 and the thickness of active area 4.
It is heterogeneous to become two kinds of different conductive semiconductor materials, it combines to be formed by mutual van der waals force
I hetero-junctions, and the hetero-junctions can obtain the n+/p+ hetero-junctions of high concentration by simply adulterating process；Eight phosphatization dipotassiums
The hetero-junctions of (its lattice structure is as shown in Figure 2) and boron nitride composition, is the core of laser diode proposed by the present invention；
P-type boron nitride, eight phosphatization dipotassium K2P8, N-shaped boron nitride be all nanometer materials, and the forbidden bandwidth of boron nitride is far wider than eight phosphorus
Change dipotassium, the double heterojunction that three is formed has satisfactory electrical conductivity and mechanical property；In the heterojunction structure, eight phosphatization dipotassium institutes
Active layer be quantum well region, N-shaped boron nitride is used as acceptor portion, and eight phosphatization dipotassiums are as to body portion, eight phosphatization dipotassiums
Thin layer is transmitted to the surface of boron nitride thin layer by mechanical transfer process.
The function of laser diode device is based on the electronics transfer between N-shaped and p-type semiconductor.Under thermal equilibrium state,
The conduction band bottom of eight phosphatization dipotassiums and top of valence band are completely contained in the conduction band bottom and top of valence band of boron nitride, to after contact can
Form I type heterojunction semiconductor；Since biggish work function, electrons and holes can exist respectively between boron nitride and eight phosphatization dipotassiums
The interface of boron nitride and eight phosphatization dipotassium hetero-junctions accumulation, to form the I type double heterojunction of high doped.
A kind of preparation method of laser diode, specifically includes following steps：
(1) substrate for preparing silicon wafer wipes base surface bulky grain dust using absorbent cotton；Again successively with propyl alcohol, anhydrous
Then ethyl alcohol, deionized water ultrasonic cleaning 15min are blown with washes of absolute alcohol base remained on surface solution 15min with nitrogen
It is dry, it is put into quartz ampoule and carries out deposition processes, obtain silicon substrate 2.
(2) boron nitride pellicle is prepared using chemical vapor deposition method on 2 surface of silicon substrate, it is specific as follows：With mass ratio
It is 1:1.7 B powder and ammonia is precursor, and is aided with MgO and FeO powder (gross mass is the 30% of B silty amount), at 1200 DEG C
Under conditions of react 1h, later add Si powder obtain N-shaped boron nitride (wherein the atom number ratio of Si and boron nitride be 20:100)；
Control reaction condition obtains the lower clad 3 with a thickness of 30nm, which has ultraviolet photoluminescence performance；
It (3) is 1 by mass ratio:Eight phosphatization dipotassium thin layers are prepared in 3.2 potassium and red phosphorus at 1000 DEG C, pass through machinery
Removing obtains the eight phosphatization dipotassium thin layers of 30nm, and it is thin by chemical vapor deposition eight phosphatization dipotassiums to be deposited on lower clad 3
Layer obtains active layer 4, and lower clad 3 and active layer 4 combine to form I hetero-junctions by mutual van der waals force；
(4) on the basis of step (3), boron nitride pellicle is prepared using chemical vapor deposition method again：In eight phosphatizations
Dipotassium surface prepares boron nitride pellicle using same process, with mass ratio for 1:1.7 B powder and ammonia is precursor, and is aided with
MgO and FeO powder (gross mass is the 30% of B silty amount), reacts 1h under conditions of 1200 DEG C, adds Be powder later and obtain P
(wherein the atom number ratio of Be and boron nitride is 40 to type boron nitride:100)；Control reaction condition obtains the upper packet with a thickness of 30nm
Coating 5, lower clad 3, active layer 4 and upper clad 5 constitute boron nitride and eight phosphatization dipotassium double-heterostructures；
(5) under the above conditions, upper surface and silicon substrate 2 by the method for surface evaporation metal, in upper clad 5
Lower surface is deposited one layer uniformly and aluminium layer of the purity greater than 95wt%, respectively electrode 6 and lower electrode 1, and top electrode 6 accounts for eight phosphorus
Change the 15% of dipotassium thin layer area.
Embodiment 3
It is of the present invention based on boron nitride/laser diodes of eight phosphatization dipotassium hetero-junctions, be two-dimensional hetero-junction laser
Diode, main includes following several parts：It lower electrode 1, silicon substrate 2, lower clad 3, active layer 4, upper clad 5 and powers on
Pole 6, having a layer thickness in the upper surface chemical vapor deposition of silicon substrate 2 is that 50nm mixes Si boron nitride thin layer (N-shaped, wherein Si
Atom number ratio with boron nitride is 15:100) i.e. lower clad 3, is deposited with eight that a layer thickness is 50nm on boron nitride layer
Phosphatization dipotassium thin layer, that is, active layer 4, mixes Si boron nitride and eight phosphatization dipotassiums constitute heterojunction structure, thin in eight phosphatization dipotassiums later
It is that 50nm mixes Be boron nitride thin film layer (p-type, wherein the atom number of Be and boron nitride that layer upper surface is deposited with a layer thickness again
Than being 35:100) i.e. upper clad 5 mixes Si boron nitride, eight phosphatization dipotassiums and mixes Be boron nitride formation double-heterostructure, upper
The upper surface of clad 5 and the lower surface of silicon substrate 2 are vapor-deposited with the aluminium layer that one layer of purity is greater than 95wt%, respectively as powering on
Pole 6 and lower electrode 1, and top electrode 6 accounts for the 13% of eight phosphatization dipotassium thin layer areas.
Light non-absorbing window 7 is formed on the left and right ends top of laser diode, and its depth is greater than on electrode and coats
Layer the sum of 5 and the thickness of active area 4.
It is heterogeneous to become two kinds of different conductive semiconductor materials, it combines to be formed by mutual van der waals force
I hetero-junctions, and the hetero-junctions can obtain the n+/p+ hetero-junctions of high concentration by simply adulterating process；Eight phosphatization dipotassiums
The hetero-junctions of (its lattice structure is as shown in Figure 2) and boron nitride composition, is the core of laser diode proposed by the present invention；
P-type boron nitride, eight phosphatization dipotassium K2P8, N-shaped boron nitride be all nanometer materials, and the forbidden bandwidth of boron nitride is far wider than eight phosphorus
Change dipotassium, the double heterojunction that three is formed has satisfactory electrical conductivity and mechanical property；In the heterojunction structure, eight phosphatization dipotassium institutes
Active layer be quantum well region, N-shaped boron nitride is used as acceptor portion, and eight phosphatization dipotassiums are as to body portion, eight phosphatization dipotassiums
Thin layer is transmitted to the surface of boron nitride thin layer by mechanical transfer process.
The function of laser diode device is based on the electronics transfer between N-shaped and p-type semiconductor.Under thermal equilibrium state,
The conduction band bottom of eight phosphatization dipotassiums and top of valence band are completely contained in the conduction band bottom and top of valence band of boron nitride, to after contact can
Form I type heterojunction semiconductor；Since biggish work function, electrons and holes can exist respectively between boron nitride and eight phosphatization dipotassiums
The interface of boron nitride and eight phosphatization dipotassium hetero-junctions accumulation, to form the I type double heterojunction of high doped.
A kind of preparation method of laser diode, specifically includes following steps：
(1) substrate for preparing silicon wafer wipes base surface bulky grain dust using absorbent cotton；Again successively with propyl alcohol, anhydrous
Then ethyl alcohol, deionized water ultrasonic cleaning 15min are blown with washes of absolute alcohol base remained on surface solution 15min with nitrogen
It is dry, it is put into quartz ampoule and carries out deposition processes, obtain silicon substrate 2.
(2) boron nitride pellicle is prepared using chemical vapor deposition method on 2 surface of silicon substrate, it is specific as follows：With mass ratio
It is 1:1.9 B powder and ammonia is precursor, and is aided with MgO and FeO powder (gross mass is the 25% of B silty amount), at 1050 DEG C
Under conditions of react 1.2h, later add Si powder obtain N-shaped boron nitride (wherein the atom number ratio of Si and boron nitride be 15:
100)；Control reaction condition obtains the lower clad 3 with a thickness of 50nm, which has ultraviolet photoluminescence performance,
It (3) is 1 by mass ratio:Eight phosphatization dipotassium thin layers are prepared in 3.6 potassium and red phosphorus at 950 DEG C, pass through machinery
Removing obtains the eight phosphatization dipotassium thin layers of 50nm, and it is thin by chemical vapor deposition eight phosphatization dipotassiums to be deposited on lower clad 3
Layer obtains active layer 4, and lower clad 3 and active layer 4 combine to form I hetero-junctions by mutual van der waals force；
(4) on the basis of step (3), boron nitride pellicle is prepared using chemical vapor deposition method again：In eight phosphatizations
Dipotassium surface prepares boron nitride pellicle using same process, with mass ratio for 1:1.9 B powder and ammonia is precursor, and is aided with
MgO and FeO powder (gross mass is the 25% of B silty amount), reacts 1.2h under conditions of 950 DEG C, adds Be powder later and obtain P
(wherein the atom number ratio of Be and boron nitride is 15 to type boron nitride:100)；Control reaction condition obtains the upper packet with a thickness of 50nm
Coating 5, lower clad 3, active layer 4 and upper clad 5 constitute boron nitride and eight phosphatization dipotassium double-heterostructures；
(5) under the above conditions, upper surface and silicon substrate 2 by the method for surface evaporation metal, in upper clad 5
Lower surface is deposited one layer uniformly and purity is greater than the aluminium layer of 95wt%, respectively as top electrode 6 and lower electrode 1, and top electrode 6
Account for the 13% of eight phosphatization dipotassium thin layer areas.
Claims (10)
1. a kind of laser diode, it is characterised in that：The laser diode contains-eight phosphatization dipotassium hetero-junctions of boron nitride, knot
Structure includes silicon substrate (2), is provided with lower clad (3) in the upper surface of silicon substrate (2), the upper surface of clad (3) is deposited with
Active layer (4), active layer (4) upper surface are deposited with clad (5), make in the upper surface evaporated metal layer of upper clad (5)
For top electrode (6), metal layer is vapor-deposited with as lower electrode (1) in the lower surface of silicon substrate (2).
2. a kind of laser diode as described in claim 1, it is characterised in that：On the left and right ends of the laser diode
Portion is formed with light non-absorbing window (7), and its depth is greater than the sum of the thickness of clad (5) and active area (4) on electrode.
3. a kind of laser diode as described in claim 1, it is characterised in that：The active layer (4) is eight phosphatization dipotassiums
Thin layer is quantum well region, with a thickness of for 30~50nm.
4. a kind of laser diode as described in claim 1, it is characterised in that：The upper clad (5) and lower clad
(3) it is boron nitride thin layer, forms N-shaped boron nitride wherein going up clad (5) and adulterating Si, wherein the atom number of Si and boron nitride
Than being 10~20:100；Lower clad (3) doping Be forms p-type boron nitride, and wherein the atom number ratio of Be and boron nitride is 30
~40:100；And the thickness of upper clad (5) and lower clad (3) is 30~50nm.
5. a kind of laser diode as described in claim 1, it is characterised in that：The upper clad (5), active layer (4)
I type double heterojunction is constituted with lower clad (3).
6. a kind of laser diode as described in claim 1, it is characterised in that：The upper surface in upper clad (5)
Evaporated metal layer is vapor-deposited with metal layer as lower electrode (1) as top electrode (6), in the lower surface of silicon substrate (2), and metal layer is
Uniform and purity is greater than the aluminium layer of 95wt%, and the size of top electrode (6) is the 10%~15% of active layer (4) area.
7. a kind of preparation method of laser diode as described in claim 1, it is characterised in that：This method includes following step
Suddenly：
1) clad (3) under clean silicon substrate (2) upper surface deposition；
2) active layer (4) are deposited in lower clad (3) upper surface；
3) upper clad (5) are deposited in active layer (4) upper surface；
4) one layer of metal layer is deposited in upper clad (5) upper surface, as top electrode (6)；It is deposited in the lower surface of silicon substrate (2)
One layer of metal layer, as lower electrode (1).
8. a kind of preparation method of laser diode as claimed in claim 7, it is characterised in that：It is clean described in step 1)
Silicon substrate (2), refer to silicon wafer successively with after propyl alcohol, dehydrated alcohol, deionized water ultrasonic cleaning and being dried with nitrogen, go
Except obtaining the clean silicon substrate (2) after the steam of silicon chip surface.
9. a kind of preparation method of laser diode as claimed in claim 7, it is characterised in that：The lower clad
(3) and upper clad (5) is boron nitride pellicle, is prepared by using chemical vapor deposition method, specific as follows：With mass ratio
It is 1:1.7~1:2 B powder and ammonia is precursor, and is aided with MgO and FeO powder, reacts 1 under conditions of 900~1200 DEG C
~1.5h, the Si powder for adding specified amount later obtain N-shaped boron nitride, that is, descend clad (3), or the B powder of addition specified amount obtains
To p-type boron nitride, i.e., upper clad (5), wherein the gross mass of MgO and FeO powder is the 20%~30% of B silty amount.
10. a kind of preparation method of laser diode as claimed in claim 7, it is characterised in that：Described in step 2)
The step of lower clad (3) upper surface deposition active layer (4), is as follows：Eight phosphatization dipotassiums are 1 by mass ratio:3.2~1:4 potassium and
Red phosphorus is prepared at 850~1000 DEG C, is by mechanically pulling off to obtain eight phosphatization dipotassium thin layers of required thickness, and passing through
It learns vapor deposition and deposits eight phosphatization dipotassium thin layers, i.e. active layer (4) on boron nitride thin layer, two kinds of materials combine to form nitridation
Boron and eight phosphatization dipotassium hetero-junctions.
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