CN108922899A - 像素阵列基板及其驱动方法 - Google Patents
像素阵列基板及其驱动方法 Download PDFInfo
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Abstract
一种像素阵列基板及其驱动方法,其中像素阵列基板包括基板、位于基板上的至少一像素结构以及液晶层。至少一像素结构包括微型发光二极管、支撑墙、位于支撑墙与微型发光二极管之间的第一底电极以及设置于支撑墙上且与第一底电极分离的第一顶电极。微型发光二极管包括第一电极、电性连接第一电极的第一半导体层、第二半导体层、位于第一半导体层与第二半导体层之间的发光层以及电性连接第二半导体层的第二电极。液晶层设置于第一底电极上且位于支撑墙与微型发光二极管之间。
Description
技术领域
本发明涉及一种基板及其驱动方法,且特别涉及一种像素阵列基板及其驱动方法。
背景技术
发光二极管(Light Emitting Diode;LED)为一种发光元件,因其具低功耗、高亮度、高分辨率及高色彩饱和度等特性,因而适用于构建发光二极管显示面板的像素结构。微型发光二极管(Micro-Light Emitting Diode;LED)不仅承继发光二极管的特性,同时可将使用微型发光二极管的像素结构的体积缩小至使用发光二极管的像素结构的体积的1%。
然而,微型发光二极管的电极垫会遮挡住微型发光二极管所激发出来的光线,导致微型发光二极管光取出效率降低的问题,严重地影响显示面板的品质。因此,目前亟需一种能增加微型发光二极管光取出效率的方法。
发明内容
本发明提供一种像素阵列基板,能解决微型发光二极管光取出效率降低的问题或调整出光角度。
本发明提供一种像素阵列基板的驱动方法,能解决微型发光二极管光取出效率降低的问题或调整出光角度。
本发明的一种像素阵列基板,包括基板、位于基板上的至少一像素结构以及液晶层。至少一像素结构包括微型发光二极管、设置于基板上的支撑墙、设置于基板上且位于支撑墙与微型发光二极管之间的第一底电极以及设置于支撑墙上且与第一底电极分离的第一顶电极。微型发光二极管包括第一电极、电性连接第一电极的第一半导体层、至少部分与第一半导体层重叠的第二半导体层、位于第一半导体层与第二半导体层之间的发光层以及电性连接第二半导体层的第二电极。液晶层设置于第一底电极上且位于支撑墙与微型发光二极管之间。
本发明的一种像素阵列基板的驱动方法,包括先提供像素阵列基板,其中像素阵列基板包括基板、位于基板上的至少一像素结构以及液晶层。至少一像素结构包括微型发光二极管、设置于基板上的第一底电极、位于微型发光二极管的至少两侧的支撑墙以及设置于支撑墙上且与第一底电极分离的第一顶电极。微型发光二极管包括第一电极、电性连接第一电极的第一半导体层、至少部分与第一半导体层重叠的第二半导体层、位于第一半导体层与第二半导体层之间的发光层以及电性连接第二半导体层的第二电极。液晶层设置于第一底电极上且位于支撑墙与微型发光二极管之间。再来,对第一电极施加第一电压、对第一底电极施加第二电压、对第二电极施加第三电压以及对第一顶电极施加第四电压,其中第一电压不同于第三电压且第二电压不同于第四电压。
基于上述,本发明的像素阵列基板及其驱动方法可以改善像素结构光取出效率降低的问题,或调整出光角度,并可进一步提升显示面板的显示品质。
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合说明书附图作详细说明如下。
附图说明
图1是依照本发明一实施例的一种像素阵列基板的俯视示意图。
图2是根据图1的剖线A-A’示出的像素阵列基板的剖面示意图。
图3是依照本发明另一实施例的一种像素阵列基板的俯视示意图。
图4是根据图3的剖线B-B’示出的像素阵列基板的剖面示意图。
图5是依照本发明另一实施例的一种像素阵列基板的俯视示意图。
图6是依照本发明另一实施例的一种像素阵列基板的俯视示意图。
附图标记说明:
100、200、300、400:像素阵列基板
110:基板
112:支撑墙
112a:第一侧
112b:第二侧
114:第一电极
116:第一半导体层
118:发光层
120:第二半导体层
122:第二电极
124、144:绝缘层
126、126’:电极垫
128:连接结构
132:第一信号线
134:第二信号线
136:对向基板
142:焊料
A-A’、B-B’:剖线
b1:第一底电极
b2:第二底电极
BM:遮光图案
COM:共用电极线
d:距离
D:漏极
DL:数据线
G:栅极
LC:液晶层
LED、LED1、LED2:微型发光二极管
PX、PX1、PX2:像素结构
S:源极
SL:扫描线
T:主动元件
t1:第一顶电极
t2:第二顶电极
α1、α2:夹角
具体实施方式
在下文中将参照附图更全面地描述本发明,在附图中示出了本发明的示例性实施例。如本领域技术人员将认识到的,可以以各种不同的方式修改所描述的实施例,而不脱离本发明的构思或范围。
除非另有定义,本文使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员通常理解的相同的含义。将进一步理解的是,诸如在通常使用的字典中定义的那些术语应当被解释为具有与它们在相关技术和本发明的上下文中的含义一致的含义,并且将不被解释为理想化的或过度正式的意义,除非本文中明确地这样定义。
本文参考作为理想化实施例的示意图的截面图来描述示例性实施例。因此,可以预期到作为例如制造技术及/或(and/or)公差的结果的图示的形状变化。因此,本文所述的实施例不应被解释为限于如本文所示的区域的特定形状,而是包括例如由制造导致的形状偏差。例如,示出或描述为平坦的区域通常可以具有粗糙及/或非线性特征。此外,所示的锐角可以是圆的。因此,图中所示的区域本质上是示意性的,并且它们的形状不是旨在示出区域的精确形状,并且不是旨在限制权利要求的范围。
图1是依照本发明一实施例的一种像素阵列基板的俯视示意图。图2是根据图1的剖线A-A’示出的像素阵列基板的剖面示意图。
请参照图1及图2,本实施例的像素阵列基板100包括基板110、像素阵列以及液晶层LC。基板110的材质可为玻璃、石英、有机聚合物、金属、或是其它可适用的材料。基板110上包括设置有像素阵列。像素阵列包括多条扫描线SL、多条数据线DL、多条第一信号线132、至少一像素结构PX以及共用电极线COM,为了方便说明,仅以一条扫描线SL、一条数据线DL、一条第一信号线132、一个像素结构PX以及一条共用电极线COM为例。扫描线SL与数据线DL彼此交错设置,且每一个像素结构电性连接于所对应的扫描线SL的其中一条和所对应的数据线DL的其中一条。本发明的实施例,是以扫描线SL的延伸方向与数据线DL的延伸方向不平行为例。举例来说,扫描线SL的延伸方向与数据线DL的延伸方向互相垂直。扫描线SL与数据线DL一般是使用金属材料。然,本发明不限于此,根据其他实施例,扫描线SL与数据线DL也可以使用其他导电材料(例如:金属材料的氮化物、金属材料的氧化物、金属材料的氮氧化物或其它合适的材料)或是金属材料与其它导电材料的堆叠层。图2还示出设置于像素阵列基板100的对向侧的对向基板136,对向基板136上例如可以包括滤光图案、波长转换材料或其他构件。
请继续参考图1及图2,至少一像素结构PX位于基板110上。像素结构PX包括主动元件T、微型发光二极管LED、支撑墙112、第一底电极b1、第二底电极b2以及第一顶电极t1。主动元件T可以是底部栅极型薄膜晶体管或是顶部栅极型薄膜晶体管,其包括栅极G、源极S、漏极D以及通道CH。
主动元件T的栅极G电性连接至扫描线SL其中的一者,主动元件T的源极S电性连接至数据线DL其中的一者,且主动元件T的漏极D电性连接至微型发光二极管LED的一端。在一些实施例中,主动元件T与微型发光二极管LED之间还通过其他驱动元件电性连接,但本发明不以此为限。
请继续参考图1,在本实施例中,共用电极线COM包括延伸方向与扫描线SL延伸方向平行的主干以及自主干部朝向像素结构PX延伸的分支,其中共用电极线COM的分支与电极垫126’电性连接。共用电极线COM可为透明导电图案,其材质可为金属氧化物,例如铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物、或其它合适的氧化物、或者是上述至少二者的堆叠层。共用电极线COM的材质亦可采用具高反射性的导电材料,例如金属、合金、金属的氮化物、金属的氧化物、金属的氮氧化物、或是金属与其它导电材料的堆叠层。在本实施例中,共用电极线COM例如采用与扫描线SL相同的材质或同一道制程,但本发明不以此为限。
请继续参考图1及图2,微型发光二极管LED包括第一电极114、第一半导体层116、发光层118、第二半导体层120、第二电极122以及绝缘层124。在本实施例中,绝缘层124具有至少两个开口,分别暴露出第一半导体层116的部分顶面与第二半导体层120的部分顶面。在本实施例中,第一电极114与第二电极122分别设置于绝缘层124暴露出第一半导体层116与第二半导体层120的开口中。第一电极114亦可通过另一导电膜层,间接与第一半导体层116接触,第二电极122亦可通过前述的另一导电膜层,间接与第二半导体层120接触。第一电极114电性连接第一半导体层116,第二电极122电性连接第二半导体层120。在本实施例中,第二半导体层120与部分第一半导体层116重叠。第一半导体层116与第二半导体层120中的一者为N型掺杂半导体,且另一者为P型掺杂半导体。第一半导体层116与第二半导体层120的材料例如包括氮化镓(GaN)、氮化铟镓(InGaN)、砷化镓(GaAs)或其他IIIA族和VA族元素组成的材料或其他合适的材料,但本发明不以此为限。
发光层118位于第一半导体层116以及第二半导体层120之间。发光层118例如具有量子井(Quantum Well;QW),发光层118例如为单量子井(SQW)、多量子井(MQW)或其它的量子井,P型掺杂的半导体层提供的空穴与N型掺杂的半导体层提供的电子可以在发光层118结合,并以光的模式释放出能量。在一些实施例中,发光层118的材料例如包括氮化镓(GaN)、氮化铟镓(InGaN)、砷化镓(GaAs)、磷化铝镓铟(AlGaInP)、砷化铟铝镓(InAlGaAs)或其他IIIA族和VA族元素组成的材料或其他合适的材料。发光层118的宽度为W,例如W介于5微米与50微米之间。虽然在本实施例中,微型发光二极管LED是以水平式微型发光二极管为例,但本发明不以此为限。在其他实施例中,微型发光二极管LED也可以是垂直式微型发光二极管或其他形式的微型发光二极管。
请继续参考图1及图2,支撑墙112设置于基板110上且第一顶电极t1设置于支撑墙112上。在本实施例中,支撑墙112与第一顶电极t1是封闭式地环绕于微型发光二极管LED的四侧,但本发明不限于此,支撑墙112与第一顶电极t1也可以是局部式地环绕于微型发光二极管LED的四侧。支撑墙112与第一顶电极t1垂直投影至基板110上的图样可为中空的圆形、椭圆形、正方形、长方形、菱形、六边形以及多边形。微型发光二极管LED的发光层118垂直投影至基板110上的图样的一侧边与第一顶电极t1垂直投影至基板110上的图样之间具有一最短距离d,此最短距离d大于W且小于5倍的W,例如最短距离d介于15微米与250微米之间。考量光取出效率或调整出光角度效果时,支撑墙112的高度H为微型发光二极管LED的高度L的两倍以上,优选的高度比值为三倍以上。例如微型发光二极管LED的高度L是2微米至10微米,支撑墙112的高度H是6微米至30微米。第一顶电极t1与第一信号线132电性连接。第一信号线132例如将多个第一顶电极t1串联在一起。第一底电极b1设置于基板110上,且位于支撑墙112与微型发光二极管LED之间。第一底电极b1与第一顶电极t1分离。第一底电极b1电性连接第一电极114至电极垫126’。第一底电极b1与第二底电极b2分离。第二底电极b2设置于基板110上,且与第二电极122电性连接。第二底电极b2通过电极垫126以及连接结构128与主动元件T的漏极D电性连接。
在一些实施例中,微形发光二极管LED是先形成于生长基板上,接着再自生长基板转移至基板110上。在一些实施例中,基板110上具有粘着层(未绘出),粘着层有助于固定微形发光二极管LED于基板110上。将微形发光二极管LED转移至基板110上之后,再形成第一底电极b1与第二底电极b2,以将微形发光二极管LED电性连接至电极垫126以及电极垫126’。
在一些实施例中,第一底电极b1、第二底电极b2以及第一顶电极t1例如是于同一道制程(例如是化学气相沉积制程)中所形成,且可以通过同一个遮罩而沉积出预期的形状。在一些实施例中,由于支撑墙112具有高度H,因此,沉积出来的第一顶电极t1与第一底电极b1可以互相分离而不会短路。在一实施例中,第一顶电极t1除了会形成于支撑墙112顶面之外,还会形成于支撑墙112靠近顶面的部分侧面,但并未完全覆盖支撑墙112的侧面,所以此时第一顶电极t1与基板110之间的距离至少大于2/3H较佳。在此设计下,因制程而造成短路的问题较不易发生,且在第一顶电极t1与第一底电极b1所产生的电场分布及控制上效果较佳。在本实施方式中,第一底电极b1、第二底电极b2以及第一顶电极t1的材质可包括:金属材料、金属氧化物或其他合适的材料,其中金属材料例如包括铜、钢、铜钨合金、铜银合金或其它合适的金属,金属氧化物例如包括铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物、其它合适的氧化物或者是上述至少二者的堆叠层。在本实施例中,第一底电极b1、第二底电极b2以及第一顶电极t1的材质相同,但本发明不限于此。在其他实施例中,第一底电极b1、第二底电极b2以及第一顶电极t1的材质也可以不相同。
请参考图2,液晶层LC设置于第一底电极b1上,且部分液晶层LC位于支撑墙112与微型发光二极管LED之间,部分液晶层覆盖微型发光二极管LED。液晶层LC包括液晶分子或是其它可适用的介质。在本发明下列实施例中,液晶层LC的材料优选是蓝相液晶分子,但本发明不限于此。液晶层LC中的液晶分子的折射率介于1.7与2.4之间。在未施加电场时,液晶层LC中的液晶分子具有光学等向性。像素阵列基板100的驱动方法包括,先提供像素阵列基板100,接着对第一电极114施加第一电压V1、对第一底电极b1施加第二电压V2、对第二电极122施加第三电压V3以及对第一顶电极t1施加第四电压V4。在本实施例中,第一电压V1等于第二电压V2、第一电压V1不同于第三电压V3,且第二电压V2不同于第四电压V4。在施加电场时,液晶层LC中的液晶分子会转动或如蓝相液晶分子产生结构改变,并进而改变微形发光二极管LED所发出的光线的行进方向,进一步地使光集中或可进行出光的调整。液晶分子的折射率变化例如可通过调整第四电压V4而改变。在本实施例中,通过改变液晶层LC内的液晶分子,可以增加像素结构的出光角度且解决像素结构光取出效率降低的问题,或者进行出光角度的调整。
基于上述,本发明的像素阵列基板100及其驱动方法可以增加像素结构的出光角度且解决像素结构光取出效率降低的问题,或调整出光角度,并可进一步提升显示面板的显示品质。
图3是依照本发明另一实施例的一种像素阵列基板的俯视示意图。图4是根据图3的剖线B-B’示出的像素阵列基板的剖面示意图。在此必须说明的是,图3与图4的实施例沿用图1与图2的实施例的元件标号与部分内容,其中采用相同或近似的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例,下述实施例不再重复赘述。
图4的实施例与图2的实施例的区别的特点在于:像素阵列基板200还包括第二顶电极t2与第二信号线134。
请参考图3及图4,在本实施例的像素阵列基板200中,至少一像素结构PX包括主动元件T、微型发光二极管LED、支撑墙112、第一底电极b1、第一顶电极t1以及第二顶电极t2。在本实施例中,支撑墙112包含彼此分隔的两部分,第二顶电极t2设置于一部分支撑墙112上,且与位于另一部分支撑墙112上的第一顶电极t1互相分离。第二顶电极t2与第二信号线134电性连接,第二信号线134例如与第一信号线132具有相同的延伸方向但分别设置于像素结构PX的相对两侧。支撑墙112具有面向微型发光二极管LED的第一侧112a,与位于第一侧112a对面的第二侧112b。支撑墙112的第一侧112a与基板110之间的夹角为α1,支撑墙112的第二侧112b至少有部分与基板110之间的夹角为α2,α1大于α2。由于α1大于α2,支撑墙112上的第一顶电极t1以及第二顶电极t2可以沉积于支撑墙112第二侧112b较缓的部分上,通过结构变化较缓的部分,使第一顶电极t1与第二顶电极t2可以较轻易的分别与第一信号线132以及第二信号线134电性连接,而减少第一顶电极t1与第二顶电极t2和第一信号线132以及第二信号线134电性连接时因支撑墙112的高度太高而产生的断线问题。
在本实施例中,支撑墙112与第一顶电极t1或支撑墙112与第二顶电极t2是局部式地环绕于微型发光二极管LED的四侧,但本发明不限于此。
请继续参考图3及图4,在本实施例中,微型发光二极管LED例如是通过焊料142与基板110上的电极垫126接合(电性连接),且焊料142周围例如有绝缘层144,但本发明不限于此。微型发光二极管LED的第二电极122通过电极垫126以及连接结构128与主动元件T的漏极D电性连接。第二电极122电性连接第二半导体层120。在本实施例中,微型发光二极管LED的绝缘层124具有至少一个开口以暴露出第一半导体层116的部分顶面。第一电极114设置于绝缘层124在第一半导体层116暴露出的开口中,且第一电极114电性连接第一半导体层116。在本实施例中,第二半导体层120与第一半导体层116重叠。虽然在本实施例中,微型发光二极管LED是以垂直式微型发光二极管为例,但本发明不以此为限。在其他实施例中,微型发光二极管LED也可以是水平式微型发光二极管或其他形式的微型发光二极管。
像素阵列基板200的驱动方法包括,先提供像素阵列基板200,接着对第一电极114施加第一电压V1、对第一底电极b1施加第二电压V2、对第二电极122施加第三电压V3、对第一顶电极t1施加第四电压V4以及对第二顶电极t2施加第五电压V5,其中第一电压V1等于第二电压V2、第一电压V1不同于第三电压V3、第二电压V2不同于第四电压V4、第二电压V2不同于第五电压V5,且第五电压V5不同于第四电压V4。例如使第一电极114电性连接第一底电极b1。在施加电场时,液晶层LC中的液晶分子会转动或因形变而产生折射率的变化,并改变微形发光二极管LED所发出的光线的行进方向,进一步地使光集中或分散。液晶分子的折射率变化例如可通过调整第四电压V4以及第五电压V5而改变。在本实施例中,通过第五电压V5不同于第四电压V4,使得微形发光二极管LED与两侧支撑墙112之间的液晶分子感受到不同的电场强度,进一步地使微形发光二极管LED两侧的液晶分子的转动角度或形变程度不同,借此可以局部调整视角,达到特定方向影像或局部防窥的效果。举例来说,在本实施例中,使用高折射率(例如折射率为1.8)的蓝相液晶构成的液晶层LC的像素阵列基板200,在未施加电场或施加电场时的中心视角辉度及整体辉度都比一般的像素阵列基板高。在本实施例中,亦可通过液晶层LC位于支撑墙112与微型发光二极管LED之间且具有双折射率的特性,可以增加像素结构的出光角度且解决像素结构光取出效率降低的问题。
基于上述,本发明的像素阵列基板200及其驱动方法可以增加像素结构的出光角度且解决像素结构的光取出效率降低的问题,或调整出光角度,并可进一步提升显示面板的显示品质。
图5是依照本发明另一实施例的一种像素阵列基板的俯视示意图。在此必须说明的是,图5的实施例沿用图3的实施例的元件标号与部分内容,其中采用相同或近似的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例,下述实施例不再重复赘述。
图5的实施例是根据排列多个图3的实施例的像素结构的俯视示意图。请参考图5,在本实施例中,像素阵列基板300包括两个像素结构PX1、PX2。两个像素结构PX1、PX2的支撑墙112彼此分离,且其中一个像素结构PX2的第一顶电极t1相邻于另一个像素结构PX1的第二顶电极t2。在本实施例中,两个像素结构PX1、PX2中的微型发光二极管LED1、LED2可以各别发出不同颜色的光。举例来说,微型发光二极管LED1与微型发光二极管LED2可以各别发出不同颜色的光。在一些实施例中,对应于不同的微型发光二极管的液晶层包括不同折射率的液晶分子或者可通过施加的电压而个别视角调整。举例来说,其中一个像素结构PX2例如发出蓝光且使用折射率为1.7的液晶分子构成的液晶层,另一个像素结构PX1例如发出红光且使用折射率为2.2的液晶分子构成的液晶层。在本实施例中,使用不同的微型发光二极管以及不同折射率的液晶分子构成的液晶层,可以增加像素结构的出光角度且解决像素结构光取出效率降低的问题。在一些实施例中,例如使用喷墨的方式形成不同折射率的液晶分子。
在本实施例中,像素阵列基板300的驱动方法包括对第一电极114施加第一电压V1、对第一底电极b1施加第二电压V2、对第二电极122施加第三电压V3、对第一顶电极t1施加第四电压V4以及对第二顶电极t2施加第五电压V5,其中第一电压V1等于第二电压V2、第一电压V1不同于第三电压V3、第二电压V2不同于第四电压V4、第二电压V2不同于第五电压V5、第五电压V5不同于第四电压V4,且其中一个像素结构PX2的第一顶电极t1与另一个像素结构PX1的第二顶电极t2施加有相同的电压。在本实施例中,通过其中一个像素结构PX2的第一顶电极t1与另一个像素结构PX1的第二顶电极t2施加有相同的电压,可以改善相邻的两像素结构PX1、PX2之间的漏光问题。
基于上述,本发明的像素阵列基板300及其驱动方法,通过位于基板110上且分别包括微型发光二极管LED1、LED2的像素结构PX1、PX2以及位于支撑墙112与微型发光二极管LED1、LED2之间的液晶层LC,可以增加出像素结构的光角度且解决像素结构光取出效率降低的问题,或调整出光角度,并可进一步提升显示面板的显示品质。
图6是依照本发明另一实施例的一种像素阵列基板的俯视示意图。在此必须说明的是,图6的实施例沿用图5的实施例的元件标号与部分内容,其中采用相同或近似的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例,下述实施例不再重复赘述。
图6的实施例与图5的实施例的区别的特点在于:像素阵列基板400还包括遮光图案BM。
请参考图6,在本实施例中,像素阵列基板400包括两个像素结构PX1、PX2。两个像素结构PX1、PX2的支撑墙112彼此分离,且其中一个像素结构PX2的第一顶电极t1相邻于另一个像素结构PX1的第二顶电极t2。在本实施例中,像素阵列基板400还包括遮光图案BM。遮光图案BM位于任意相邻两个像素结构之间,用以遮蔽其间的各信号线,其中遮光图案BM可部分延伸重叠于一个像素结构PX2的第一顶电极t1上方以及另一个像素结构PX1的第二顶电极t2上方,但本发明不以此为限,在其他实施例中可以不与任何顶电极重叠。遮光图案BM于基板110的垂直投影位于其中一个像素结构PX2的第一顶电极t1于基板110的垂直投影以及另一个像素结构PX1的第二顶电极t2于基板110的垂直投影之间。在本实施例中,通过遮光图案BM的配置可以改善相邻的两像素结构之间的漏光问题。
基于上述,本发明的像素阵列基板及其驱动方法可以增加像素结构的出光角度且解决像素结构光取出效率降低的问题,或调整出光角度,并可进一步提升显示面板的显示品质。
综上所述,本发明的像素阵列基板及其驱动方法,通过位于基板上且包括微型发光二极管的像素结构以及液晶层,可以增加中心视角辉度及整体辉度、局部调整视角且达到特定方向影像或局部防窥的效果或改善相邻的两像素结构之间的漏光问题等。本发明的像素阵列基板及其驱动方法可以增加像素结构的出光角度且解决像素结构光取出效率降低的问题,或调整出光角度,并可进一步提升显示面板的显示品质。
虽然本发明已以实施例公开如上,然其并非用以限定本发明,任何所属技术领域中技术人员,在不脱离本发明的构思和范围内,当可作些许的变动与润饰,故本发明的保护范围当视权利要求所界定者为准。
Claims (19)
1.一种像素阵列基板,包括:
一基板;
至少一像素结构,位于该基板上,该至少一像素结构包括:
一微型发光二极管,包括:
一第一电极;
一第一半导体层,电性连接该第一电极;
一第二半导体层,至少部分与该第一半导体层重叠;
一发光层,位于该第一半导体层以及该第二半导体层之间;以及
一第二电极,电性连接该第二半导体层;
一支撑墙,设置于该基板上;
一第一底电极,设置于该基板上,且位于该支撑墙与该微型发光二极管之间;以及
一第一顶电极,设置于该支撑墙上,且与该第一底电极分离;以及
一液晶层,设置于该第一底电极上,且位于该支撑墙与该微型发光二极管之间。
2.如权利要求1所述的像素阵列基板,其中该第一底电极与该第一电极电性连接。
3.如权利要求1所述的像素阵列基板,其中该支撑墙具有面向该微型发光二极管的一第一侧,与位于该第一侧对面的一第二侧,该第一侧与该基板之间的夹角为α1,该第二侧与该基板之间的夹角为α2,α1大于α2。
4.如权利要求1所述的像素阵列基板,还包括:
一第一信号线,与该第一顶电极电性连接。
5.如权利要求1所述的像素阵列基板,其中该液晶层的材料为蓝相液晶。
6.如权利要求2所述的像素阵列基板,还包括:
一第二底电极,设置于该基板上,且与该第二电极电性连接。
7.如权利要求1所述的像素阵列基板,其中该支撑墙与该第一顶电极环绕于该微型发光二极管的四侧。
8.如权利要求1所述的像素阵列基板,其中该支撑墙的高度为该微型发光二极管的高度的两倍以上。
9.如权利要求1所述的像素阵列基板,其中该支撑墙的高度为H,该第一顶电极与该基板之间的距离大于2/3H。
10.如权利要求1所述的像素阵列基板,其中该发光层的宽度为W,该发光层于该基板的垂直投影形成一图形,该图形的一侧边与该第一顶电极于该基板的垂直投影之间具有一最短距离,该最短距离大于W且小于5倍的W。
11.如权利要求1所述的像素阵列基板,还包括:
一第二顶电极,设置于该支撑墙上,且与该第一顶电极互相分离;以及
一第二信号线,与该第二顶电极电性连接。
12.如权利要求11所述的像素阵列基板,包括两个相邻的像素结构,该两个相邻的像素结构的支撑墙彼此分离,且其中一个像素结构的第一顶电极相邻于另一个像素结构的第二顶电极。
13.如权利要求12所述的像素阵列基板,还包括:
一遮光图案,位于该两个相邻的像素结构之间。
14.如权利要求13所述的像素阵列基板,其中该遮光图案于该基板的垂直投影位于该其中一个像素结构的该第一顶电极于该基板的垂直投影以及该另一个像素结构的该第二顶电极于该基板的垂直投影之间。
15.一种像素阵列基板的驱动方法,包括:
提供一像素阵列基板,该像素阵列基板包括:
一基板;
至少一像素结构,位于该基板上,该至少一像素结构包括:
一微型发光二极管,包括:
一第一电极;
一第一半导体层,电性连接该第一电极;
一第二半导体层,至少部分与该第一半导体层重叠;
一发光层,位于该第一半导体层以及该第二半导体层之间;以及
一第二电极,电性连接该第二半导体层;
一支撑墙,设置于该基板上;
一第一底电极,设置于该基板上,且位于该支撑墙与微型发光二极管之间以及
一第一顶电极,设置于该支撑墙上,且与该第一底电极分离;以及
一液晶层,设置于该第一底电极上,且位于该支撑墙与该微型发光二极管之间;
对该第一电极施加一第一电压;
对该第一底电极施加一第二电压;
对该第二电极施加一第三电压;以及
对该第一顶电极施加一第四电压,其中该第一电压不同于该第三电压,且该第二电压不同于该第四电压。
16.如权利要求15所述的驱动方法,其中该液晶层的材料为蓝相液晶。
17.如权利要求15所述的驱动方法,其中该第一底电极与该第一电极电性连接,且该第一电压等于该第二电压。
18.如权利要求15所述的驱动方法,其中该至少一像素结构还包括:
一第二顶电极,设置于该支撑墙上,且与该第一顶电极互相分离;以及
该像素阵列基板还包括:
一第二信号线,与该第二顶电极电性连接,
该驱动方法还包括:
对该第二顶电极施加一第五电压,其中该第二电压不同于该第五电压。
19.如权利要求18所述的驱动方法,其中该第五电压不同于该第四电压。
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Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070048409A (ko) * | 2005-11-04 | 2007-05-09 | 삼성전자주식회사 | 프린트 헤드 및 이를 채용한 화상형성장치 |
KR20070063314A (ko) * | 2005-12-14 | 2007-06-19 | 삼성전자주식회사 | 표시장치와 그 제조방법 |
US20070183038A1 (en) * | 2006-02-08 | 2007-08-09 | Samsung Electronics Co., Ltd. | Polarized light emitting light guide plate, method of manufacturing the same and illuminator for flat panel display device using polarized light emitting light guide plate |
JP2010160905A (ja) * | 2009-01-06 | 2010-07-22 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置および電子機器 |
CN102655163A (zh) * | 2011-03-04 | 2012-09-05 | 三星移动显示器株式会社 | 反射型复合显示装置及其制造方法 |
US20120228657A1 (en) * | 2011-03-07 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element and Light-Emitting Device |
US20140273317A1 (en) * | 2013-03-14 | 2014-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
CN104133320A (zh) * | 2014-08-20 | 2014-11-05 | 深圳市华星光电技术有限公司 | 彩色液晶显示模组结构及其背光模组 |
US20150221671A1 (en) * | 2014-01-31 | 2015-08-06 | Sharp Laboratories Of America, Inc. | Fabrication Process Using Circuit-on-Wire |
US20150317015A1 (en) * | 2014-05-02 | 2015-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device, Input/output Device, and Electronic Appliance |
CN105204239A (zh) * | 2014-05-28 | 2015-12-30 | 群创光电股份有限公司 | 显示面板与显示装置 |
US20160180767A1 (en) * | 2014-12-17 | 2016-06-23 | Apple Inc. | Display with a reduced refresh rate |
US20160293688A1 (en) * | 2015-04-01 | 2016-10-06 | Innolux Corporation | Display panel |
WO2017163926A1 (ja) * | 2016-03-24 | 2017-09-28 | ソニー株式会社 | 撮像装置、電子機器 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI230305B (en) | 2002-12-31 | 2005-04-01 | Au Optronics Corp | Dual mode liquid crystal display |
KR101404582B1 (ko) * | 2006-01-20 | 2014-06-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치의 구동방법 |
GB0620955D0 (en) * | 2006-10-20 | 2006-11-29 | Speakman Stuart P | Methods and apparatus for the manufacture of microstructures |
CN101608743B (zh) | 2008-06-20 | 2015-04-22 | 晶元光电股份有限公司 | 光源模块、其对应的光棒及其对应的液晶显示装置 |
US8642363B2 (en) * | 2009-12-09 | 2014-02-04 | Nano And Advanced Materials Institute Limited | Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology |
WO2012111581A1 (en) | 2011-02-18 | 2012-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP2012220575A (ja) | 2011-04-05 | 2012-11-12 | Japan Display East Co Ltd | 液晶表示装置 |
JP6141590B2 (ja) * | 2011-10-18 | 2017-06-07 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
KR101924996B1 (ko) * | 2012-03-29 | 2018-12-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US9558721B2 (en) * | 2012-10-15 | 2017-01-31 | Apple Inc. | Content-based adaptive refresh schemes for low-power displays |
KR102096051B1 (ko) * | 2013-03-27 | 2020-04-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이를 포함하는 유기 발광 표시 장치 |
US20140368561A1 (en) * | 2013-06-17 | 2014-12-18 | Jasper Display Corp. | Method For Modulating A Micro-Led Display |
KR102105061B1 (ko) | 2014-01-06 | 2020-04-28 | 삼성디스플레이 주식회사 | 유기발광 표시패널 및 이의 제조방법 |
US10229630B2 (en) * | 2014-05-14 | 2019-03-12 | The Hong Kong University Of Science And Technology | Passive-matrix light-emitting diodes on silicon micro-display |
TWI570486B (zh) | 2014-06-11 | 2017-02-11 | 友達光電股份有限公司 | 顯示模組及其驅動方法 |
KR102246365B1 (ko) * | 2014-08-06 | 2021-04-30 | 삼성디스플레이 주식회사 | 표시장치와 그의 제조방법 |
CN105390503B (zh) * | 2014-08-29 | 2018-12-28 | 乐金显示有限公司 | 薄膜晶体管基板及使用薄膜晶体管基板的显示装置 |
CN105390502B (zh) * | 2014-08-29 | 2019-07-12 | 乐金显示有限公司 | 显示装置 |
KR102284754B1 (ko) * | 2014-10-27 | 2021-08-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 및 이를 포함하는 유기 발광 표시 장치 |
KR102409965B1 (ko) * | 2015-06-08 | 2022-06-16 | 삼성전자주식회사 | 발광소자 패키지, 파장 변환 필름 및 그 제조 방법 |
WO2017075776A1 (en) * | 2015-11-04 | 2017-05-11 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
TWI622188B (zh) * | 2016-12-08 | 2018-04-21 | 錼創科技股份有限公司 | 發光二極體晶片 |
US10141475B1 (en) * | 2017-12-24 | 2018-11-27 | Mikro Mesa Technology Co., Ltd. | Method for binding micro device to conductive pad |
-
2018
- 2018-05-10 TW TW107115997A patent/TWI681554B/zh active
- 2018-07-24 CN CN201810819972.1A patent/CN108922899B/zh active Active
-
2019
- 2019-05-09 US US16/407,204 patent/US10978496B2/en active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070048409A (ko) * | 2005-11-04 | 2007-05-09 | 삼성전자주식회사 | 프린트 헤드 및 이를 채용한 화상형성장치 |
KR20070063314A (ko) * | 2005-12-14 | 2007-06-19 | 삼성전자주식회사 | 표시장치와 그 제조방법 |
US20070183038A1 (en) * | 2006-02-08 | 2007-08-09 | Samsung Electronics Co., Ltd. | Polarized light emitting light guide plate, method of manufacturing the same and illuminator for flat panel display device using polarized light emitting light guide plate |
JP2010160905A (ja) * | 2009-01-06 | 2010-07-22 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置および電子機器 |
CN102655163A (zh) * | 2011-03-04 | 2012-09-05 | 三星移动显示器株式会社 | 反射型复合显示装置及其制造方法 |
US20120228657A1 (en) * | 2011-03-07 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element and Light-Emitting Device |
US20140273317A1 (en) * | 2013-03-14 | 2014-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
US20150221671A1 (en) * | 2014-01-31 | 2015-08-06 | Sharp Laboratories Of America, Inc. | Fabrication Process Using Circuit-on-Wire |
US20150317015A1 (en) * | 2014-05-02 | 2015-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device, Input/output Device, and Electronic Appliance |
CN105204239A (zh) * | 2014-05-28 | 2015-12-30 | 群创光电股份有限公司 | 显示面板与显示装置 |
CN104133320A (zh) * | 2014-08-20 | 2014-11-05 | 深圳市华星光电技术有限公司 | 彩色液晶显示模组结构及其背光模组 |
US20160180767A1 (en) * | 2014-12-17 | 2016-06-23 | Apple Inc. | Display with a reduced refresh rate |
US20160293688A1 (en) * | 2015-04-01 | 2016-10-06 | Innolux Corporation | Display panel |
WO2017163926A1 (ja) * | 2016-03-24 | 2017-09-28 | ソニー株式会社 | 撮像装置、電子機器 |
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US10978496B2 (en) | 2021-04-13 |
CN108922899B (zh) | 2020-10-16 |
TW201947756A (zh) | 2019-12-16 |
TWI681554B (zh) | 2020-01-01 |
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