CN108919397A - A kind of device for realizing stepped depositions type tow -dimensions atom photoetching - Google Patents
A kind of device for realizing stepped depositions type tow -dimensions atom photoetching Download PDFInfo
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- CN108919397A CN108919397A CN201810548512.XA CN201810548512A CN108919397A CN 108919397 A CN108919397 A CN 108919397A CN 201810548512 A CN201810548512 A CN 201810548512A CN 108919397 A CN108919397 A CN 108919397A
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- reflecting mirror
- photoetching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Abstract
The present invention relates to a kind of devices for realizing stepped depositions type tow -dimensions atom photoetching, including the first reflecting mirror, the second reflecting mirror and it is mechanically fixed mechanism, first reflecting mirror and the second reflecting mirror vertical glue joint constitute vertical reflector group, the mechanism that is mechanically fixed includes first structure part, the second structural member, third structural member and the 4th structural member, first structure part, the second structural member, third structural member and the 4th structural member, which constitute one, can accommodate the frame of vertical reflector group, and there are the spaces for passing through atomic beam and converging light for the frame.Compared with prior art, the present invention traces to the source tow -dimensions atom photoetching grid angle to the vertical angle of vertical reflector group, ensure the orthogonality of lattice structure, and control the collimation that stationary field during tow -dimensions atom photoetching stepped depositions cuts light, the consistency and uniformity for ensuring photoetching lattice structure are, it can be achieved that stepped depositions type atom lithography technology prepares tow -dimensions atom photoetching lattice structure of the nonorthogonality error less than 0.01 degree.
Description
Technical field
The present invention relates to atom lithography technical fields, more particularly, to one kind for realizing stepped depositions type tow -dimensions atom light
The device at quarter.
Background technique
Have good orthogonality be nano measurement instrument and equipment application in widespread demand, such as scanning probe it is micro-
Mirror need good orthogonality reduce angular error, scanning electron microscope needs good orthogonality to reduce measurement process
In drift error, need good orthogonality to reduce Abbe error etc. in the surface encoder for measuring two shaft platforms.
Therefore, in the application of actual nano measurement instrument and equipment, the nonorthogonality between multiaxial motion system axis and axis is main
The Measuring origin wanted, it is to realize that high accuracy is surveyed that orthogonality calibration is carried out using the standard substance for having good orthogonality
The key of amount.
Two-dimensional quadrature type lattice structure is most common orthogonality calibration standard matter, and preparation process is generally based on sharp
Light interference lithography, electron beam lithography, multilayer technique and conventional lithographic techniques, for example, what Nanosensor company developed
The models two-dimensional quadrature type grid such as 2D292nm used in 2D144nm the and NANO5 international comparison that 2D200nm, ASM company develop
Lattice standard substance.It is with 2D292nm model two-dimensional quadrature type grid standard substance measurement result used in NANO5 international comparison
Example, two-dimensional grid vertical angle are 90.5 degree.Since the two-dimensional grid structural point of above-mentioned preparation process preparation is not direct
Traceability, cause nonorthogonality error angle larger, generally in 0.5 degree magnitude.At the same time, another is unique
Standard grid technology of preparing be stepped depositions type atom lithography technology, the grid orthogonality of the technology development can directly trace to the source
To sample rotates angle, nonorthogonality error be can control at 0.01 degree hereinafter, being very suitable for developing good orthogonality
Two-dimensional grid lattice standard substance.
Stepped depositions type atom lithography technology is made of one dimensional atom photoetching process twice.One dimensional atom photoetching technique principle
For atom by the effect of dipolar forces in laser field.Specifically, as made of the detuning laser superposition of indigo plant that two beams are propagated in opposite directions
Stationary field constitutes laser field, when atom moves in this laser standing wave field, a photon can be absorbed from light beam, and pass through
Stimulated radiation makes another beam of laser obtain a photon.The process of Atomic absorption photon is that a static atom is in light intensity
The left side of minimum value, it absorbs the photon propagated from left to right first from laser beam, is then propagated from right to left
Laser excitation returns to ground state and releases a photon to the left.In the process, it obtains twice of recoil momentum, direction
It is directed to right side.At the same time, the stress condition of atom is exactly the opposite on the right side of the trough, in the case where stimulated radiation to
Left side movement.For synthesis, atom does the movement of similar simple harmonic oscillator in stationary field light field lowest point.When atom passes through stationary field
When, atom will be aggregated in trough near center location.Similarly, if under the action of red shift laser standing wave field, atom will be
The convergence of antinode near center location.Based on the optical grating construction of one dimensional atom photoetching technique preparation, due to atomic deposition position and swash
Optical standing wave field wave paddy or anti-node location strictly correspond to, can be with the reliable one-dimensional grating structure of manufacturing cycle pin-point accuracy, the structure
Period strictly trace the natural jump frequency between the transition energy level of atom, error size generally in the 0.1nm order of magnitude, has
Consistency and sample room consistency in extraordinary sample.
The detailed process of stepped depositions type atom lithography technology is to be based on atom lithography technology, prepare on substrate first
One dimensional atom photolitographic deposition optical grating construction out obtains one dimensional atom photolitographic deposition grating template；Then keep converging light be directed toward with
Grating template plane normal vector direction is constant, and rotates one dimensional atom photolitographic deposition grating template to required special angle θ；One
Second of atom lithography is carried out on dimension atom lithography optical grating construction, forms tow -dimensions atom grating diamond grid structure, and diamond shape grid
The one of interior angle of grid pattern is equal with one-dimensional grating template rotation angle, θ.For guarantee be formed by structure have it is good
Even property and consistency, it is desirable that metal atomic beam furnace temperature, converging light general power, converging light frequency detuning during atom lithography twice
Amount, converging light and substrate to cut light ratio, atomic beam transverse direction cooling effect, sedimentation time etc. always consistent.And converging light
With substrate to cut light ratio consistent, it is required that twice in deposition process specimen surface space normal vector be directed toward it is constant.
Orthogonal type tow -dimensions atom photoetching lattice structure (i.e. θ=90 degree are developed using stepped depositions type atom lithography technologies
Special case) key be guarantee following two condition：(1) accurately (required angle error is less than 0.01 for 90 degree of sample of rotation
Degree)；(2) the space normal vector direction of specimen surface remains unchanged before and after rotation sample.It generally can be directly using rotation sample
Turntable or the like carries out high-precision rotation to sample, however is to be difficult to ensure rotation front and back template table the drawbacks of the method
The space normal vector in face is constant.Therefore, for the demand for developing orthogonal type tow -dimensions atom photoetching grating, develop and design a kind of new
Adjustment structure come and meanwhile guarantee that above-mentioned two key technology condition is particularly necessary.
Summary of the invention
Guarantee simultaneously accurately it is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of
It rotates 90 degree of sample (required angle error is less than 0.01 degree) and rotates the space normal vector direction guarantor of specimen surface before and after sample
Constant stringent condition is held, realizes have the development of the tow -dimensions atom raster grid of good orthogonality.
The purpose of the present invention can be achieved through the following technical solutions：
A kind of device for realizing stepped depositions type tow -dimensions atom photoetching, including the first reflecting mirror, the second reflecting mirror and
It is mechanically fixed mechanism, first reflecting mirror and the second reflecting mirror vertical glue joint constitute vertical reflector group, the vertical reflection
Microscope group, which is fixed on, to be mechanically fixed in mechanism,
The mechanism that is mechanically fixed includes first structure part, the second structural member, third structural member and the 4th structural member, described
First structure part, the second structural member, third structural member and the 4th structural member, which constitute one, can accommodate the frame of the vertical reflector group
Frame, and the frame, there are the space for passing through atomic beam and converging light, the first structure part is equipped with for placing atom
The workpiece surface of photoetching grating template.
Further, first reflecting mirror and the second mirror surface, which are plated, is formed with the reflection that reflectivity is higher than 97%
Film.
Further, the verticality angle tolerance between first reflecting mirror and the second reflecting mirror was less than 5 seconds.
Further, the first structure part includes in same surface and separating 3 protrusions being arranged, and described 3
Protrusion forms the workpiece surface, and the workpiece surface is vertical with first reflecting mirror and the second reflecting mirror respectively.
Further, the workpiece surface verticality angle between first reflecting mirror and the second reflecting mirror respectively
Tolerance was less than 30 seconds.
Further, the first structure part and the second structural member are oppositely arranged, and first structure part and the second structural member
Between there are for pass through converging light space.
Further, second structural member is equipped with multiple circular holes for across screw, and the screw is for fixing institute
State atom lithography grating template.
Further, second structural member is equipped with for the through-hole across atomic beam.
The device realizes that the tow -dimensions atom photoetching of stepped depositions type specifically includes following steps：
1) it is based on atom lithography technology, atomic beam passes through frame and is incident on the atom lithography light being placed on first structure part
On grid template, laser is from direction incidence vertical with the first reflecting mirror, with the second mirror parallel, backtracking after reflection,
One dimensional atom photolitographic deposition optical grating construction is prepared on atom lithography grating template, obtains one dimensional atom photolitographic deposition grating sample
Plate；
2) converging light direction is kept to be directed toward with one dimensional atom photolitographic deposition grating template plane normal vector constant, by described one
Tie up one set angle θ of atom lithography deposition grating template rotation, 0 degree<θ≤90 degree；
3) atomic beam passes through frame and is incident on the one dimensional atom photolitographic deposition grating template, and laser is reflected from second
Mirror is vertical, incident with the direction of the first mirror parallel, forms tow -dimensions atom grating vertical grid structure.
Further, in the step 1) and step 3), atomic beam furnace temperature, converging light general power, converging light frequency detuning
Cut light ratio, atomic beam transverse direction cooling effect and the sedimentation time of amount, converging light and atom lithography grating specimen surface are kept
Unanimously.
Compared with prior art, the invention has the advantages that：
1, vertical reflector group is fixed on and is mechanically fixed in mechanism by the present apparatus, passes through the stepped depositions first time of the present apparatus
The one dimensional atom photoetching parallel gratings of formation are in the first reflecting mirror, and second of one dimensional atom photoetching parallel gratings formed is in second
Reflecting mirror, the vertical angle that the grid angle that tow -dimensions atom photoetching is developed is traced to the source to vertical reflector group (can control at 5 seconds
Within), it is ensured that the orthogonality of tow -dimensions atom photoetching lattice structure.
2, for being bonded the workpiece surface and the first reflecting mirror, the second reflecting mirror point of tow -dimensions atom photoetching template in the present apparatus
Not vertical, vertical precision control errors are directed toward constant within 30 seconds in conjunction with convergent laser space during atom lithography twice
And respectively by backtracking after the first reflecting mirror and the second reflecting mirror, to ensure that tow -dimensions atom photoetching stepped depositions process
Middle stationary field cuts the collimation of light, and then realizes the consistency and uniformity of tow -dimensions atom photoetching lattice structure.
3, it is tested using the present apparatus, without being transformed to original vacuum chamber, has saved cost, good compatibility.
4, the present apparatus can be used to implement stepped depositions type atom lithography technology preparation nonorthogonality error less than 0.01 degree
Tow -dimensions atom photoetching lattice structure, for nano measurement instrument and equipment application in good orthogonality calibration.
Detailed description of the invention
Fig. 1 is the embodiment of the present invention for the vertical reflector group of stepped depositions type two dimension Cr atom lithography technology and its consolidates
Determine equipments overall structure figure
Fig. 2 is that the atomic force of the orthogonal type two dimension Cr atom lithography lattice structure of patent Example development through the invention is aobvious
Micro mirror image.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.The present embodiment is with technical solution of the present invention
Premised on implemented, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to
Following embodiments.
As shown in Figure 1, the present embodiment provides a kind of device for realizing stepped depositions type tow -dimensions atom photoetching, including the
One reflecting mirror M1, the second reflecting mirror M2 and it is mechanically fixed mechanism, the first reflecting mirror M1 and the second reflecting mirror M2 vertical glue joint are constituted
Vertical reflector group, vertical reflector group, which is fixed on, to be mechanically fixed in mechanism.Being mechanically fixed mechanism includes first structure part 3,
Two structural members 4, third structural member 5 and the 4th structural member 6, first structure part 3, the second structural member 4, third structural member 5 and the 4th
Structural member 6, which constitutes one, can accommodate the frame of vertical reflector group, and there are the skies for passing through atomic beam and converging light for the frame
Between, first structure part 3 is equipped with the workpiece surface for placing atom lithography grating template.
In the present embodiment, first structure part 3, the second structural member 4, third structural member 5 and the 4th structural member 6 are special-shaped knot
Component, first structure part 3 is L-shaped, combines to form rectangular-ambulatory-plane structure with third structural member 5 and the 4th structural member 6, the second structural member
4 be in rectangular-ambulatory-plane so that the frame that is formed of first structure part 3, the second structural member 4, third structural member 5 and the 4th structural member 6 there are
For passing through the space of atomic beam and converging light.
First reflecting mirror M1 and the second surface reflecting mirror M2, which are plated, is formed with the reflectance coating that reflectivity is higher than 97%.The present embodiment
It is middle to use corresponding wavelength for the high-reflecting film of 425.6nm.
Verticality angle tolerance between first reflecting mirror M1 and the second reflecting mirror M2 was less than 5 seconds, to guarantee tow -dimensions atom light
Carve the orthogonality of grid.
First structure part 3 includes in same surface and separating 3 protrusions 301,302,303 being arranged, 3 protrusions
Part forms workpiece surface, and workpiece surface is vertical with the first reflecting mirror M1 and the second reflecting mirror M2 respectively.Workpiece surface respectively with
Verticality angle tolerance between first reflecting mirror M1 and the second reflecting mirror M2 was less than 30 seconds, to ensure that tow -dimensions atom photoetching
Stationary field cuts the collimation of light during stepped depositions, so realize tow -dimensions atom photoetching lattice structure consistency and uniformly
Property.Atom lithography grating template is fixed on frame by 3 protrusions 301,302,303 simultaneously, between 301 and 302,302
With 303 between respectively recessing, space is stopped before and after atom lithography grating template, to adjust the cutting ratio of convergent laser simultaneously
Whether the height for observing converging light height and atomic beam is consistent, improves preparation precision.
In the present embodiment, first structure part 3 and the second structural member 4 are oppositely arranged, and first structure part 3 and the second structural member
There are the spaces for passing through converging light between 4.Set on second structural member 4 there are three for across screw circular hole 401,402,
403, the screw is used to atom lithography grating template correspondence being fixed on protrusion 301,302,303.On second structural member 4
Equipped with for the through-hole across atomic beam.
Above-mentioned apparatus realizes that the tow -dimensions atom photoetching of stepped depositions type specifically includes following steps：
1) it is based on atom lithography technology, atomic beam passes through frame and is incident on the atom lithography being placed on first structure part 3
On grating template, laser is incident from direction vertical with the first reflecting mirror M1, parallel with the second reflecting mirror M2, and the reflection road Hou Yuan is returned
It returns, one dimensional atom photolitographic deposition optical grating construction is prepared on atom lithography grating template, obtains one dimensional atom photolitographic deposition light
Grid template, atom lithography grating template be silicon or indium phosphide, atomic beam element be chromium (Cr), iron (Fe), sodium (Na), aluminium (Al) or
Ytterbium (Yb).The metal atomic beam that the present embodiment uses is chromium (Cr).
In experiment, convergent laser wavelength is 425.6nm, and the resonant transition energy level of corresponding Cr atom is7S3→7P40, it assembles
Laser frequency is adjusted to the resonance level and corresponds to just detuning (+the 20MHz) of centre frequency or bear the detuning position (- 250MHz).Shape
At one-dimensional chromium (Cr) atom lithography grating structure period be optical maser wavelength used half, be 212.8nm.In addition, preparing
Cheng Zhong, convergent laser are limited within 50% by template cutting ratio.
This time Cr atom lithography process uses the first reflecting mirror M1 to carry out atom lithography as principal reflection mirror
2) converging light direction is kept to be directed toward with one dimensional atom photolitographic deposition grating template plane normal vector constant, by one-dimensional original
Sub- photolitographic deposition grating template rotates a set angle θ, and in the present embodiment, θ is 90 degree, realization orthogonal type tow -dimensions atom photoetching grid
Lattice structure, angular error is less than 0.01 degree.
3) atomic beam pass through frame be incident on one dimensional atom photolitographic deposition grating template, laser from the second reflecting mirror M2
Vertically, the direction parallel with the first reflecting mirror M1 is incident, forms tow -dimensions atom grating vertical grid structure.This time Cr atom lithography
Process uses the second reflecting mirror M2 as principal reflection mirror.
In step 1) and step 3), atomic beam furnace temperature, converging light general power, converging light frequency detuning, converging light and original
Cut light ratio, atomic beam transverse direction cooling effect and the sedimentation time that sub-light carves grating specimen surface are consistent.
Fig. 2 is that the atomic force of the orthogonal type two dimension Cr atom lithography lattice structure of patent Example development through the invention is aobvious
Micro mirror image, in image, the theoretical distance of neighboring lattice points is 212.8nm, and the angle of vertical direction grid array is by vertically reflecting
Angle between microscope group (M1 and M2) determines, is theoretically better than 10 seconds.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that those skilled in the art without
It needs creative work according to the present invention can conceive and makes many modifications and variations.Therefore, all technologies in the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical solution, all should be within the scope of protection determined by the claims.
Claims (10)
1. a kind of device for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that including the first reflecting mirror (M1),
Second reflecting mirror (M2) and it is mechanically fixed mechanism, first reflecting mirror (M1) and the second reflecting mirror (M2) vertical glue joint are constituted and hung down
Straight reflection microscope group, the vertical reflector group, which is fixed on, to be mechanically fixed in mechanism,
The mechanism that is mechanically fixed includes first structure part (3), the second structural member (4), third structural member (5) and the 4th structural member
(6), the first structure part (3), the second structural member (4), third structural member (5) and the 4th structural member (6) constitute one and can accommodate
The frame of the vertical reflector group, and there are the space for passing through atomic beam and converging light, the first structures for the frame
Part (3) is equipped with the workpiece surface for placing atom lithography grating template.
2. the device according to claim 1 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that described
First reflecting mirror (M1) and the surface the second reflecting mirror (M2), which are plated, is formed with the reflectance coating that reflectivity is higher than 97%.
3. the device according to claim 1 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that described
Verticality angle tolerance between first reflecting mirror (M1) and the second reflecting mirror (M2) was less than 5 seconds.
4. the device according to claim 1 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that described
First structure part (3) includes in same surface and separating 3 protrusions being arranged, and 3 protrusions form the workpiece
Surface, and the workpiece surface is vertical with first reflecting mirror (M1) and the second reflecting mirror (M2) respectively.
5. the device according to claim 4 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that described
Workpiece surface respectively the verticality angle tolerance between first reflecting mirror (M1) and the second reflecting mirror (M2) less than 30 seconds.
6. the device according to claim 1 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that described
First structure part (3) and the second structural member (4) are oppositely arranged, and between first structure part (3) and the second structural member (4) there are with
In the space for passing through converging light.
7. the device according to claim 1 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that described
Second structural member (4) is equipped with multiple circular holes for across screw, and the screw is for fixing the atom lithography grating template.
8. the device according to claim 1 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that described
Second structural member (4) is equipped with for the through-hole across atomic beam.
9. the device according to claim 1 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that the dress
It sets and realizes that the tow -dimensions atom photoetching of stepped depositions type specifically includes following steps：
1) it is based on atom lithography technology, atomic beam passes through frame and is incident on the atom lithography light being placed on first structure part (3)
On grid template, laser is incident from direction vertical with the first reflecting mirror (M1), parallel with the second reflecting mirror (M2), reflects the road Hou Yuan
It returns, one dimensional atom photolitographic deposition optical grating construction is prepared on atom lithography grating template, obtains one dimensional atom photolitographic deposition
Grating template；
2) converging light direction is kept to be directed toward with one dimensional atom photolitographic deposition grating template plane normal vector constant, by the one-dimensional original
Sub- photolitographic deposition grating template rotation one set angle θ, 0 degree<θ≤90 degree；
3) atomic beam pass through frame be incident on the one dimensional atom photolitographic deposition grating template, laser from the second reflecting mirror
(M2) vertical, parallel with the first reflecting mirror (M1) direction is incident, forms tow -dimensions atom grating vertical grid structure.
10. the device according to claim 9 for realizing stepped depositions type tow -dimensions atom photoetching, which is characterized in that institute
It states in step 1) and step 3), atomic beam furnace temperature, converging light general power, converging light frequency detuning, converging light and atom lithography
Cut light ratio, atomic beam transverse direction cooling effect and the sedimentation time of grating specimen surface are consistent.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113777685A (en) * | 2021-08-30 | 2021-12-10 | 同济大学 | Large-area self-tracing grating preparation method based on scanning atomic lithography technology |
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|---|---|---|---|---|
| US6787759B1 (en) * | 2003-04-23 | 2004-09-07 | Wisconsin Alumni Research Foundation | Atomic lithography of two dimensional nanostructures |
| CN102033996A (en) * | 2010-12-08 | 2011-04-27 | 桂林电子科技大学 | Three-dimensional analysis method for deposition characteristic of nano-grating |
| CN102538775A (en) * | 2010-12-24 | 2012-07-04 | 清华大学 | Cold atom beam interference gyro device |
| CN103116212A (en) * | 2012-12-10 | 2013-05-22 | 同济大学 | Atomic beam two-dimension cooling optical prism frame |
| CN103985427A (en) * | 2014-05-16 | 2014-08-13 | 中国科学院上海光学精密机械研究所 | Double pulse standing wave coherent beam splitting system used for 87Rb cold atoms |
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- 2018-05-31 CN CN201810548512.XA patent/CN108919397B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6787759B1 (en) * | 2003-04-23 | 2004-09-07 | Wisconsin Alumni Research Foundation | Atomic lithography of two dimensional nanostructures |
| CN102033996A (en) * | 2010-12-08 | 2011-04-27 | 桂林电子科技大学 | Three-dimensional analysis method for deposition characteristic of nano-grating |
| CN102538775A (en) * | 2010-12-24 | 2012-07-04 | 清华大学 | Cold atom beam interference gyro device |
| CN103116212A (en) * | 2012-12-10 | 2013-05-22 | 同济大学 | Atomic beam two-dimension cooling optical prism frame |
| CN103985427A (en) * | 2014-05-16 | 2014-08-13 | 中国科学院上海光学精密机械研究所 | Double pulse standing wave coherent beam splitting system used for 87Rb cold atoms |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113777685A (en) * | 2021-08-30 | 2021-12-10 | 同济大学 | Large-area self-tracing grating preparation method based on scanning atomic lithography technology |
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