CN108918589A - With infrared thermal imaging microscope detecting chip failure except wrong method - Google Patents
With infrared thermal imaging microscope detecting chip failure except wrong method Download PDFInfo
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- CN108918589A CN108918589A CN201810357317.9A CN201810357317A CN108918589A CN 108918589 A CN108918589 A CN 108918589A CN 201810357317 A CN201810357317 A CN 201810357317A CN 108918589 A CN108918589 A CN 108918589A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
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Abstract
The present invention is with infrared thermal imaging microscope detecting chip failure except wrong method, including step：Chip and heat shield are provided, heat shield is placed on chip, and heat shield all covers the front of chip, the heat that chip normally generates heat is less than the heat of failpoint fever on chip, and the heat-insulated range of heat shield is between the heat that failpoint on the heat and chip that chip normally generates heat generates heat；It is powered to chip；Infrared thermal imaging microscope is provided, the chip of heat shield has been placed using the micro- sem observation of infrared thermal imaging and shooting, has obtained image.The present invention with infrared thermal imaging microscope detecting chip failure except wrong method, by increased heat shield in hot spot position fixing process, a possibility that the excessive hot noise interference generated so as to avoid chip, conducive to the accuracy for improving chip failure analysis.
Description
Technical field
The present invention relates to technical field of semiconductors, encapsulate mistake in particular for the three dimensional integrated circuits of heterogeneous multi-chip stacking
Product is imitated, is electrically positioned with infrared thermal imaging microscope along with special except wrong method effectively locks the chip really to fail
Abnormal point.
Background technique
At the beginning of 21 century, the interconnection bottleneck problem of microelectronic field is more and more prominent, and the technical difficulty for reducing characteristic size is got over
Come it is bigger, chip research and development trend in same chip bist logic IC and heterogeneous (Heterogeneous) assembling structure of memory body,
The manufacture of semiconductor for following Moore's Law to advance is miniature, can not provide complete heterogeneous chip and integrate benefit, therefore be reached with low cost
System in package (SiP) to acceptable operation efficiency will then show at future.Nearly 2 years high-orders envelope surveys market and has released " WLSI
(wafer scale system combination) platform " also makes market more and more CoWoS (chip package on wafer on substrate) and InFO occur
(integrating fan-out-type) wafer-level packaging.
It is therein often using the failpoint of infrared thermal imaging microscope detecting chip when doing chip failure point analysis
Principle is infrared thermal imaging technique.Infrared thermal imaging is believed with the infrared ray specific band of photoelectric technology detection object heat radiation
Number, convert the signal into the image and figure differentiated for human vision.
Because the chip of CoWoS and InFO Advanced Packaging stacks more and complexity, and chip and chip chamber have tin ball or TSV logical
Hole connection, therefore when the failpoint of use infrared thermal imaging microscope detecting chip, in the picture, usual bright spot may be by metal
It is blocked with bright spot caused by tin ball, as shown in Figure 1, the first bright spot 11 is that failpoint heat sends out bright spot thermogenetic on chip,
Second bright spot 12 is that chip normally sends out bright spot thermogenetic, and the second bright spot 12 includes the fever such as metal, tin ball and the bright spot that generates
And background value, i.e., the bright spot that chip heat generates correspond to the extra heat for not needing to observe, the second bright spot 12 affects sight
The judgement for situations such as person of examining is to shape, the position, size of the first bright spot 11, so that abnormal bright spot can not be accurately navigated to,
Influence the accuracy of chip failure analysis.Therefore it is necessary to provide one kind except wrong method, the accuracy of raising chip failure analysis.
Summary of the invention
In order to improve the accuracy of chip failure analysis, detected the present invention provides a kind of with infrared thermal imaging microscope
Chip failure removes wrong method.
The present invention is with infrared thermal imaging microscope detecting chip failure except wrong method, including step：
Chip and heat shield are provided, the heat shield is placed on the chip, and the heat shield whole shelter
The front of chip is stated, the heat that the chip normally generates heat is less than the heat of failpoint fever on the chip, the heat shield
Heat-insulated range between on the heat and the chip that the chip normally generates heat failpoint generate heat heat between；
It is powered to the chip；
Infrared thermal imaging microscope is provided, has been placed using the micro- sem observation of the infrared thermal imaging and shooting described heat-insulated
The chip of piece, obtains image.
The present invention removes wrong method with infrared thermal imaging microscope detecting chip failure, by increasing in hot spot position fixing process
The heat shield added, a possibility that interference so as to avoid the excessive hot noise that chip generates, conducive to chip failure analysis is improved
Accuracy.
The present invention is with the wrong further improvements in methods of removing of infrared thermal imaging microscope detecting chip failure, described
Heat shield is smooth non-conductor material.
The present invention is with the wrong further improvements in methods of removing of infrared thermal imaging microscope detecting chip failure, described
The thickness of heat shield is less than or equal to 0.2mm.
The present invention is with the wrong further improvements in methods of removing of infrared thermal imaging microscope detecting chip failure, described
Heat shield is the scraps of paper or plastic plate.
The present invention is with the wrong further improvements in methods of removing of infrared thermal imaging microscope detecting chip failure, described
The distance between chip and the microscopical camera lens of the infrared thermal imaging are lens focus distance.
The present invention is with the wrong further improvements in methods of removing of infrared thermal imaging microscope detecting chip failure, is obtaining
It further include step after to described image：Hot spot is carried out to described image and positions crash handling, positions the failpoint of the chip.
Detailed description of the invention
Fig. 1 is bright spot schematic diagram when directly detecting chip failure with infrared thermal imaging microscope.
Fig. 2 is the flow chart for removing wrong method that the present invention detects chip failure with infrared thermal imaging microscope.
Bright spot schematic diagram when Fig. 3 is using after the present invention with infrared thermal imaging microscope detecting chip failure.
Specific embodiment
In order to improve the accuracy of chip failure analysis, detected the present invention provides a kind of with infrared thermal imaging microscope
Chip failure removes wrong method.
The present invention is removed with infrared thermal imaging microscope detecting chip failure in the following with reference to the drawings and specific embodiments
The preferred embodiment of wrong method is described further.Those skilled in the art can be by content disclosed by this specification easily
Solve other advantages and effect of the invention.
In conjunction with shown in Fig. 1 to Fig. 3, the present invention is with infrared thermal imaging microscope detecting chip failure except wrong method, packet
It includes：
Step 101：Chip 10 and heat shield are provided, heat shield is placed on chip 10, and heat shield all covers core
The front of piece, the heat that chip 10 normally generates heat are less than the heat of failpoint fever on chip 10, and the heat-insulated range of heat shield is situated between
Between the heat that failpoint on the heat and chip 10 that chip 10 normally generates heat generates heat；
Step 102：It is powered to chip 10；
Step 103：Infrared thermal imaging microscope is provided, has been placed using the micro- sem observation of infrared thermal imaging and shooting heat-insulated
The chip 10 of piece, obtains image.
Using the micro- sem observation chip 10 of infrared thermal imaging is passed through after heat shield, bright spot can be weakened.
In the picture, corresponding first bright spot 11 of the heat that failpoint generates heat on chip 10, the heat that chip 10 normally generates heat
Corresponding second bright spot 12, the heat that chip 10 normally generates heat are usually less than the heat that failpoint generates heat on chip 10, heat shield
Thus heat-insulated range can guarantee heat-insulated between the heat that failpoint on the heat and chip 10 that chip 10 normally generates heat generates heat
Piece is aobvious using infrared thermal imaging without the heat of isolated failure point fever while the heat that isolating chip 10 normally generates heat
When micro mirror is observed, the first bright spot 11 can be clearly observed.
Second bright spot 12 affects the judgement of situations such as shape, position, size of the observer to the first bright spot 11；But due to
The heat of failpoint fever is more, and the fever such as metal, tin ball is less, i.e. the heat that normally generates heat of chip 10 is less, therefore first
Bright spot 11 is relatively strong brighter, and the second bright spot 12 is weaker smaller；After heat shield, the heat that chip 10 normally generates heat can be heat-insulated
Piece isolation, and the heat that failpoint issues can still be observed by infrared thermal imaging microscope；It is red using passing through after heat shield
The range of the outer micro- sem observation chip 10 of thermal imaging, the first bright spot 11 that the failpoint of chip 10 itself can be made to generate is more clear.
Using the present invention, can it is obvious, be clearly observed the position of the first bright spot 11, shape, size, range caused by failpoint
Deng, and then be conducive to positioning chip failpoint, it reduces chip 10 and generates influence caused by extra heat and background value, improve core
The accuracy of 10 failure analysis of piece.
The present invention is placed between chip 10 and the micro- lens head of infrared thermal imaging using a heat-insulated material, in detecting hot spot
During to reduce chip 10 generate influence caused by extra heat and background value, so that chip 10 is generated hot spot more
It is clear, defective locations can be clearly defined out, analyzed and carried out with sharp subsequent failure.
Further, heat shield is smooth non-conductor material, it is preferable that heat shield surface is without dirty, and thickness is less than
Or it is equal to 0.2mm.The thickness of heat shield can also determine according to bright spot size, smaller weaker bright spot may be selected it is relatively thin every
Backing.
Further, heat shield is the scraps of paper or plastic plate.
Further, the distance between chip 10 and the microscopical camera lens of infrared thermal imaging are lens focus distance.
Further, further include after step 103：Hot spot is carried out to image and positions crash handling, the failure of positioning chip
Point.
The present invention removes wrong method with infrared thermal imaging microscope detecting chip failure, by increasing in hot spot position fixing process
The heat shield added a possibility that interference so as to avoid the excessive hot noise that chip 10 generates, is conducive to improve chip failure analysis
Accuracy.
The above is only presently preferred embodiments of the present invention, not do limitation in any form to the present invention, although this
Invention has been disclosed in a preferred embodiment above, and however, it is not intended to limit the invention, any person skilled in the art,
In the range of not departing from technical solution of the present invention, when the technology contents using the disclosure above make a little change or are modified to
With the equivalent embodiment of variation, but anything that does not depart from the technical scheme of the invention content, according to the technical essence of the invention to
Any simple modification, equivalent change and modification made by upper embodiment, all of which are still within the scope of the technical scheme of the invention.
It should be noted that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to cooperate
The bright revealed content of book is not intended to limit the invention enforceable limit so that those skilled in the art understands and reads
Fixed condition, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size, not
It influences still fall in disclosed technology contents under the effect of present invention can be generated and the purpose that can reach
In the range of capable of covering.
Claims (6)
1. a kind of remove wrong method with infrared thermal imaging microscope detecting chip failure, which is characterized in that including：
Chip and heat shield are provided, the heat shield is placed on the chip, and the heat shield all covers the core
The front of piece, the heat that the chip normally generates heat be less than the chip on failpoint fever heat, the heat shield every
Heat rating is between the heat that failpoint on the heat that the chip normally generates heat and the chip generates heat；
It is powered to the chip；
Infrared thermal imaging microscope is provided, has placed the heat shield using the micro- sem observation of the infrared thermal imaging and shooting
The chip, obtains image.
2. as described in claim 1 with infrared thermal imaging microscope detecting chip failure except wrong method, it is characterised in that：
The heat shield is smooth non-conductor material.
3. as described in claim 1 with infrared thermal imaging microscope detecting chip failure except wrong method, it is characterised in that：
The thickness of the heat shield is less than or equal to 0.2mm.
4. as described in claim 1 with infrared thermal imaging microscope detecting chip failure except wrong method, it is characterised in that：
The heat shield is the scraps of paper or plastic plate.
5. as described in claim 1 with infrared thermal imaging microscope detecting chip failure except wrong method, it is characterised in that：
The distance between the chip and the microscopical camera lens of the infrared thermal imaging are lens focus distance.
6. as described in claim 1 with infrared thermal imaging microscope detecting chip failure except wrong method, which is characterized in that
It further include step after obtaining described image：Hot spot is carried out to described image and positions crash handling, positions the mistake of the chip
Effect point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810357317.9A CN108918589B (en) | 2018-04-20 | 2018-04-20 | Debugging method for detecting chip failure by using infrared thermal imaging microscope |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810357317.9A CN108918589B (en) | 2018-04-20 | 2018-04-20 | Debugging method for detecting chip failure by using infrared thermal imaging microscope |
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| CN108918589A true CN108918589A (en) | 2018-11-30 |
| CN108918589B CN108918589B (en) | 2021-09-14 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109596222A (en) * | 2018-12-06 | 2019-04-09 | 广东金鉴实验室科技有限公司 | A kind of micro- heat distribution test method and system |
| CN109813435A (en) * | 2018-12-29 | 2019-05-28 | 中国电子科技集团公司第十三研究所 | Static light reflects microscopic thermal imaging method, device and terminal device |
| CN110797274A (en) * | 2019-10-21 | 2020-02-14 | 大同新成新材料股份有限公司 | Intelligent detection method for silicon-based quality of stacked chip |
| CN111239590A (en) * | 2020-02-24 | 2020-06-05 | 珠海格力电器股份有限公司 | Method and device for positioning electrostatic damage of chip |
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| Publication number | Publication date |
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| CN108918589B (en) | 2021-09-14 |
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Address after: Room C101, Building 8, 1618 Yishan Road, Minhang District, Shanghai, 201100 Applicant after: Suzhou Yite (Shanghai) Testing Technology Co., Ltd Address before: 201103 C101 room 8, building 1618, Yishan Road, Shanghai, Minhang District, China Applicant before: INTEGRA TED SERVICE TECHNOLOGY (SHANGHAI) Co.,Ltd. |
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Address after: 201100 room C101, building 8, No. 1618, Yishan Road, Xuhui District, Shanghai Patentee after: Su shiyite (Shanghai) Testing Technology Co.,Ltd. Address before: Room C101, building 8, 1618 Yishan Road, Minhang District, Shanghai 201100 Patentee before: Suzhou Yite (Shanghai) Testing Technology Co.,Ltd. |