CN108900074B - Double-edge modulation and demodulation wide-gap power device isolation driving system and method - Google Patents

Double-edge modulation and demodulation wide-gap power device isolation driving system and method Download PDF

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CN108900074B
CN108900074B CN201810786179.6A CN201810786179A CN108900074B CN 108900074 B CN108900074 B CN 108900074B CN 201810786179 A CN201810786179 A CN 201810786179A CN 108900074 B CN108900074 B CN 108900074B
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edge
demodulation
circuit module
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control signal
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CN108900074A (en
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朱忠尼
宋庆国
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

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  • Power Engineering (AREA)
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Abstract

The invention belongs to the field of power electronics, and discloses a wide-gap power device isolation driving system and method for double-edge modulation and demodulation, wherein the system comprises: a front and rear edge pulse detection circuit module of the control signal; the edge pulse shaping and amplifying circuit module; edge signalAn isolated transfer pulse transformer module; the demodulation and detection circuit module of the positive and negative signals of the edge pulse; the integrated amplifier is a demodulation circuit module of the core; and driving the amplifying circuit module. The wide-gap power device isolation driving system with double-edge modulation and demodulation provided by the invention has the advantages of simple circuit and low price; the debugging is convenient, and the reliability is high; the working frequency is high, and the frequency range is wide; wide duty cycle range, minimum control pulse tonLess than 1 mus; the pulse transformer has the positive effects of few turns and small size.

Description

Double-edge modulation and demodulation wide-gap power device isolation driving system and method
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a double-edge modulation and demodulation wide-gap power device isolation driving system and method.
Background
Currently, the current state of the art commonly used in the industry is such that:
third-generation power semiconductor switching devices represented by GaN and SiC are becoming more and more practical, and their operating frequencies are becoming higher and higher (f)sUp to 1MHz), the working modes of width modulation, frequency modulation, hybrid modulation, etc. are diversified, and the isolation driving circuit adapted to them should be studied. The drive circuit of the prior third-generation semiconductor power switch device at home and abroad is mainly in a non-isolated mode and also has a high-voltage floating drive mode, so that the semi-bridge upper and lower isolated drive is realized, the isolation of a single tube cannot be realized, and the application range is limited. The signal isolation transmission is realized by the pulse transformer through edge modulation and demodulation, but through the published documents and patent analysis, the circuit structure is complex, the manufacturing cost is high, and the practical application is difficult.
In summary, the problems of the prior art are as follows:
(1) with the increase of the frequency of the control signal, the photoelectric isolation device is difficult to select and high in price;
(2) the isolation of the pulse transformer is a better selection scheme, but the design of the pulse transformer is difficult along with the diversity of control modes;
(3) the pulse transformer causes delay and distortion to signals, needs a special shaping circuit and brings difficulty to high-frequency transmission;
the difficulty and significance for solving the technical problems are as follows:
the control signal of high frequency and multiple modulation modes is isolated by a pulse transformer.
The design of the pulse transformer is difficult;
the delay and distortion brought by the pulse voltage transformation transmission signal need a complex shaping circuit;
the two-side narrow pulse is triggered, the design of the pulse transformer is easy, but the demodulation and identification of the front edge and the rear edge of the control signal are difficult, the demodulation circuit is complex, and the signal reversal is easy to cause.
The significance of solving the technical problems is as follows:
the driving circuit capable of being isolated electromagnetically is provided for the third generation semiconductor power switch device;
providing a method for identifying the upper edge and the lower edge of the edge;
the edge modulation and demodulation method and circuit realized by using the conventional chip are provided, and the circuit is simple and low in price.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a wide-gap power device isolation driving system and method for double-edge modulation and demodulation,
the invention is realized in this way, a double-edge modulation and demodulation wide-gap power device isolation driving system, comprising:
the input end of the front and rear edge pulse detection circuit module of the control signal is used for modulating the front and rear edge pulses of the control signal into differential narrow pulses;
the edge pulse shaping and amplifying circuit module is used for converting the differential narrow pulse into a square wave narrow pulse signal and amplifying the square wave narrow pulse signal;
the edge signal isolation transmission pulse transformer module is used for electrically isolating the modulation signal through a pulse transformer;
the demodulation and detection circuit module of the edge pulse positive and negative signals detects the positive and negative of the current by the secondary positive and negative rectification end of the pulse transformer;
the integrated amplifier is a demodulation circuit module of the core and is used for demodulating signals through the integrated amplification chip and restoring control signals;
the driving amplification circuit module is used for amplifying the restored control signal to drive the switching device;
the front and rear edge pulse detection circuit module of the control signal is connected with the control signal;
the input of the edge pulse shaping and amplifying circuit module is connected with a front edge pulse detection circuit module and a rear edge pulse detection circuit module of a control signal, the output of a NOT gate A2 is respectively connected with a differential resistance-capacitance element resistor R11 and a capacitor C11, and the output of a NOT gate A3 is respectively connected with a differential resistance-capacitance element resistor R11, a capacitor C11, a resistor R12 and a capacitor C12;
the output of the edge signal isolation transmission pulse transformer module is connected with a demodulation and detection circuit module of positive and negative signals of edge pulses;
the demodulation and detection circuit module of the edge pulse positive and negative signals is connected with the demodulation circuit module taking the integrated amplifier as a core;
and the demodulation circuit module taking the integrated amplifier as a core is connected with the driving amplification circuit module.
Another object of the present invention is to provide a semiconductor power switch device with the wide-gap power device isolation driving system for double-edge modulation and demodulation.
Another object of the present invention is to provide a dual-edge modulation and demodulation wide-gap power device isolation driving method using the dual-edge modulation and demodulation wide-gap power device isolation driving system, which has the following working principle:
a1 and A3 in the four NAND gate 4011 are connected with the control signal, A3 outputs the non-signal of the control signal, A1 and A2 output the signal in phase with the control signal;
the output of the NOT gate A2 is connected with a differential resistance-capacitance element resistor R11 and a capacitor C11, the output of the NOT gate A3 is connected with a differential resistance-capacitance element resistor R12 and a capacitor C12, the output of the NOT gate A2 is connected with a series circuit of R11 and C11, the front edge and the rear edge of a control signal are detected through the differential circuit, and a narrow pulse with delta less than 0.5 is formed; b1, B2, B3 and B4 are respectively connected with C11 and C12 and are used for pulse shaping and output capacity expansion; two ends of a primary winding N11 of the high-frequency pulse transformer T1 are respectively connected with the outputs of B1, B2, B3 and B4, and the front and rear edge wide pulses of a control signal are coupled and output;
the transformer T1 performs both electromagnetic isolation and voltage matching functions. The left side of the primary winding N11 of the transformer is provided with a signal modulation circuit, and after the signal modulation circuit is coupled by the transformer, the right sides of the secondary windings N21 and N22 are provided with a demodulation circuit;
secondary positive and negative half-wave rectification circuits VD21, R21, VD22 and R22 are respectively connected with the homonymous terminal and the synonym terminal of N21 and N22, and the midpoints of N21 and N22 form the zero point of the demodulation circuit; the in-phase end of the integrated amplifier VC21 is connected with the middle points of VD21 and R21 branches through a resistor R23, and the reverse end is connected with the middle points of VD22 and R22 branches through a resistor R25;
the circuit formed by the integrated amplifier VC21 and the resistors R25, R26 and R27 has a bistable function and is used for restoring a control signal;
the complementary circuits of Q21 and Q22 are connected with the restored control signal through R28, and the amplified control signal directly drives the power switch device.
Another object of the present invention is to provide a semiconductor power switching device operating the wide-gap power device isolation driving method for double-edge modulation and demodulation.
It is another object of the present invention to provide a non-linear use of an integrated amplifier operating a wide-gap power device isolation driving system for dual edge modulation and demodulation, to achieve upper and lower edge identification and control waveform restoration.
In summary, the advantages and positive effects of the invention are:
the wide-gap power device isolation driving system for double-edge modulation and demodulation provided by the invention has the advantages of signal double-edge modulation, demodulation and isolation driving, simple circuit, low cost, strong practicability and capability of realizing fs: 0 Hz-1 MHz, pulse duty ratio D: and controlling the effect of signal isolation transmission by 0-100%.
The invention has the positive effects that 1, the circuit is simple and the price is low; 2. the debugging is convenient, and the reliability is high; 3. the working frequency is high, and the frequency range is wide; 4. wide duty cycle range, minimum control pulse tonLess than 1 mus; 5. the pulse transformer has less turns and small volume.
Drawings
Fig. 1 is a diagram of a dual-edge modulation and demodulation wide-gap power device isolation driving system provided by an embodiment of the invention.
In the figure: 1. a front and rear edge pulse detection circuit module of the control signal; 2. the edge pulse shaping and amplifying circuit module; 3. the edge signal isolation transmission pulse transformer module; 4. the demodulation and detection circuit module of the positive and negative signals of the edge pulse; 5. the integrated amplifier is a demodulation circuit module of the core; 6. and driving the amplifying circuit module.
FIG. 2 is a block diagram of the input terminals of the front and back edge pulse detection circuit for the control signal according to the embodiment of the present invention.
Fig. 3 is a block diagram of an edge pulse shaping and amplifying circuit according to an embodiment of the present invention.
Fig. 4 is a block diagram of an edge signal isolation transfer pulse transformer according to an embodiment of the present invention.
Fig. 5 is a block diagram of a demodulation and detection circuit for positive and negative signals of edge pulses according to an embodiment of the present invention.
Fig. 6 is a block diagram of a demodulation circuit with an integrated amplifier as a core according to an embodiment of the present invention.
Fig. 7 is a block diagram of a driving amplifier circuit according to an embodiment of the present invention.
Fig. 8 is a diagram of major waveforms provided by an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The following detailed description of the principles of the invention is provided in connection with the accompanying drawings.
As shown in fig. 1, an isolation driving system for a dual-edge modulation and demodulation wide-gap power device according to an embodiment of the present invention includes:
a front and rear edge pulse detection circuit module 1 for controlling signals; an edge pulse shaping and amplifying circuit module 2; the edge signal isolation transmission pulse transformer module 3; a demodulation and detection circuit module 4 for positive and negative signals of the edge pulse; a demodulation circuit module 5 with an integrated amplifier as a core; the amplifier circuit block 6 is driven.
The front and back edge pulse detection circuit module 1 of the control signal provided by the invention is connected with the control signal;
the input of the edge pulse shaping and amplifying circuit module 2 provided by the invention is connected with the front and rear edge pulse detection circuit module 1 of a control signal, and the output edge signal isolation transmission pulse transformer module 3 is connected;
the input end of the front and rear edge pulse detection circuit module of the control signal is used for modulating the front and rear edge pulses of the control signal into differential narrow pulses;
the edge pulse shaping and amplifying circuit module is used for converting the differential narrow pulse into a square wave narrow pulse signal and amplifying the square wave narrow pulse signal;
the edge signal isolation transmission pulse transformer module is used for electrically isolating the modulation signal through a pulse transformer;
the demodulation and detection circuit module of the edge pulse positive and negative signals detects the positive and negative of the current by the secondary positive and negative rectification end of the pulse transformer;
the integrated amplifier is a demodulation circuit module of the core and is used for demodulating signals through the integrated amplification chip and restoring control signals;
the driving amplification circuit module is used for amplifying the restored control signal to drive the switching device;
the output of the edge signal isolation transmission pulse transformer module 3 provided by the invention is connected with a demodulation and detection circuit module 4 of positive and negative signals of edge pulses;
the demodulation and detection circuit module 4 of the edge pulse positive and negative signals provided by the invention is connected with the demodulation circuit module 5 taking an integrated amplifier as a core;
the demodulation circuit module 5 taking the integrated amplifier as the core is connected with the driving amplification circuit module 6.
As shown in the figures 2-7 of the drawings,
the method specifically comprises the following steps:
the input end of the front and rear edge pulse detection circuit module of the control signal is connected with the control signal;
the input end of the edge pulse shaping and amplifying circuit module is connected with the output end of the front and back edge pulse detection circuit module of the control signal, and the output end of the edge pulse shaping and amplifying circuit module is connected with the input end of the edge signal isolation transfer pulse transformer module;
the output end of the edge signal isolation transmission pulse transformer module (c) is connected with the input end of the edge pulse positive and negative signal demodulation and detection circuit module (c);
the output end of demodulation and detection circuit module for positive and negative signals of edge pulse is connected with the input end of demodulation circuit module for integrated amplifier as core, and can be connected with the capacitor in charge of integrated amplifier;
demodulation circuit module output end with integrated amplifier as coreAnd drive amplifying circuit module input endOutput end of demodulation circuit module with integrated amplifier as coreAnd outputting the required drive.
The embodiment of the invention provides a wide-gap power device isolation driving method for double-edge modulation and demodulation,
the a1 and A3 of the four nand gate 4011(a1, a2, and A3) are connected to the control signal, the A3 outputs a non-signal of the control signal, and the a1 and a2 output signals in phase with the control signal.
The output of the NOT gate A2 is connected with a differential resistance-capacitance element resistor R11 and a capacitor C11, the output of the NOT gate A3 is connected with a differential resistance-capacitance element resistor R12 and a capacitor C12, the output of the NOT gate A2 is connected with a series circuit of R11 and C11, the front edge and the rear edge of a control signal are detected through the differential circuit, and a narrow pulse with delta less than 0.5 is formed; b1, B2, B3 and B4 (buffer gate circuit 4041) are respectively connected with C11 and C12 to play the functions of pulse shaping and output capacity expansion; two ends of a primary winding N11 of the high-frequency pulse transformer T1 are respectively connected with the outputs of B1, B2, B3 and B4, and the front and rear edge wide pulses of the control signal are coupled and output. The transformer T1 performs both electromagnetic isolation and voltage matching functions. The left side of the primary winding N11 of the transformer is a signal modulation circuit, and after transformer coupling, the right sides of the secondary windings N21 and N22 are demodulation circuits.
The secondary positive half-wave rectification circuit VD21, the secondary negative half-wave rectification circuit VD21, the secondary positive half-wave rectification circuit VD22 and the secondary negative half-wave rectification circuit R22 are respectively connected with the homonymous terminal and the heteronymous terminal of N21 and N22, and the midpoints of N21 and N22 form the zero point of the demodulation circuit. The non-inverting terminal of the integrated amplifier VC21 is connected with the middle points of VD21 and R21 branches through a resistor R23, and the inverting terminal is connected with the middle points of VD22 and R22 branches through a resistor R25. The circuit formed by the integrated amplifier VC21 and the resistors R25, R26 and R27 has a bistable function and is used for restoring the control signal. The complementary circuits of Q21 and Q22 are connected with the restored control signal through R28, and the amplified control signal directly drives the power switch device.
The present invention will be further described with reference to the following examples.
Example 1 Circuit design
Control signals: f. ofs: (0 Hz-800 Hz) is adjustable.
Low level: 0V
High level: 15V
Modulation circuit parameters: a. the1、A2、A3B1、B2、B3、B4
C11、C12:100pF;R11、R12:1kΩ。
Demodulating the pulse width: t is tg<0.5μs;
A pulse transformer: ferrite core of 6mm phi
N11=N21=N22Enamelled wire with 3 turns and phi 0.01mm
A demodulation circuit:
VC21:LM311
VD21、VD22、VD23、VD24:1N4148
R21、R22:10kΩ
R23、R24:1kΩ
R26:33kΩ
R24:27kΩ
R27:1kΩ
R28:100Ω
Q21、Q22
the key waveforms for the entire circuit are shown in fig. 8.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (2)

1. A dual-edge modulated and demodulated wide-gap power device isolation driving system, comprising:
the input end of the front and rear edge pulse detection circuit module of the control signal is used for modulating the front and rear edge pulses of the control signal into differential narrow pulses;
the edge pulse shaping and amplifying circuit module is used for converting the differential narrow pulse into a square wave narrow pulse signal and amplifying the square wave narrow pulse signal;
the edge signal isolation transmission pulse transformer module is used for electrically isolating the modulation signal through a pulse transformer;
the demodulation and detection circuit module of the edge pulse positive and negative signals detects the positive and negative of the current by the secondary positive and negative rectification end of the pulse transformer;
the integrated amplifier is a demodulation circuit module of the core and is used for demodulating signals through the integrated amplification chip and restoring control signals;
the driving amplification circuit module is used for amplifying the restored control signal to drive the switching device;
the front and rear edge pulse detection circuit module of the control signal is connected with the control signal;
the input of the edge pulse shaping and amplifying circuit module is connected with a front edge pulse detection circuit module and a rear edge pulse detection circuit module of a control signal, and the output of the edge pulse shaping and amplifying circuit module is connected with an edge signal isolation transmission pulse transformer module;
the output of the edge signal isolation transmission pulse transformer module is connected with a demodulation and detection circuit module of positive and negative signals of edge pulses;
the demodulation and detection circuit module of the edge pulse positive and negative signals is connected with the demodulation circuit module taking the integrated amplifier as a core;
the demodulation circuit module taking the integrated amplifier as a core is connected with the driving amplification circuit module;
the double-edge modulation and demodulation wide-gap power device isolates the semiconductor power switch device of the driving system;
the double-edge modulation and demodulation wide-gap power device isolation driving method of the double-edge modulation and demodulation wide-gap power device isolation driving system comprises the following steps:
the NOT gate A1 and the NOT gate A3 in the four-NAND gate 4011 are connected with a control signal, the NOT gate A3 outputs a NOT signal of the control signal, and the NOT gate A1 and the NOT gate A2 output signals which are in phase with the control signal;
the output of the NOT gate A2 is connected with a differential resistance-capacitance element resistor R11 and a capacitor C11, the output of the NOT gate A3 is connected with a differential resistance-capacitance element resistor R12 and a capacitor C12, the output of the NOT gate A2 is connected with a series circuit of R11 and C11, wherein one end of the C11 is connected with the output of the NAND gate A2, the other end of the C11 is connected with the R11, the other end of the R11 is grounded, the end point of the connection of the R11 and the C11 is an output end, and the front edge and the back edge of a control signal are detected through the differential; the output of the NOT gate A3 is connected with a series circuit of R12 and C12, wherein the output of a NAND gate A3 at one end of C12 is connected, the other end of C12 is connected with R12, the other end of R12 is grounded, the end point of the connection of R12 and C12 is an output end, and the front edge and the back edge of a control signal are detected through a differential circuit to form narrow pulses; the input ends and the output ends of the buffers B1 and B2 are connected in parallel, and the input ends of B1 and B2 are connected with the connection nodes of R11 and C11; the input ends and the output ends of the buffers B3 and B4 are connected in parallel, and the input ends of B3 and B4 are connected with the connection nodes of R12 and C12, so that two-path signal pulse shaping and output capacity expansion are realized; two ends of a primary winding N11 of the high-frequency pulse transformer T1 are respectively connected with the outputs of B1, B2, B3 and B4, and the front and rear edge wide pulses of a control signal are coupled and output;
the transformer T1 has the functions of electromagnetic isolation and voltage matching; the left side of the primary winding N11 of the transformer is provided with a signal modulation circuit, and after the signal modulation circuit is coupled by the transformer, the right sides of the secondary windings N21 and N22 are provided with a demodulation circuit;
the diode VD21, the resistor R21, the diode VD22 and the resistor R22 of the secondary positive half-wave rectifying circuit and the secondary negative half-wave rectifying circuit are respectively connected with the homonymous end and the heteronymous end of N21 and N22, and the midpoints of N21 and N22 form a zero point of the demodulation circuit; the in-phase end of the integrated amplifier VC21 is connected with the middle points of the branches of the diode VD21 and the resistor R21 through the resistor R23, and the reverse end is connected with the middle points of the branches of the diode VD22 and the resistor R22 through the resistor R24;
two ends of a resistor R25 are respectively connected with the in-phase end and the output end of an integrated amplifier VC21, two ends of a resistor R26 are respectively connected with the inverting end of the integrated amplifier VC21 and VDD, one end of the resistor R27 is connected with VDD, the other end of the resistor R27 is connected with the output end of VC21, and a circuit formed by the integrated amplifier VC21, the resistor R25, the resistor R26 and the resistor R27 has a bistable function and is used for restoring a control signal;
the complementary circuit of the triode Q21 and the triode Q22 is connected with the restored control signal through a resistor R28, and the amplified control signal directly drives the power switch device.
2. A non-linear use of an integrated amplifier operating the wide-gap power device isolation drive system for dual edge modulation and demodulation of claim 1 to achieve both upper and lower edge identification and control waveform recovery.
CN201810786179.6A 2018-07-17 2018-07-17 Double-edge modulation and demodulation wide-gap power device isolation driving system and method Active CN108900074B (en)

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