CN108899340A - Flexible AMOLED display panel and its manufacturing method - Google Patents
Flexible AMOLED display panel and its manufacturing method Download PDFInfo
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- CN108899340A CN108899340A CN201810698135.8A CN201810698135A CN108899340A CN 108899340 A CN108899340 A CN 108899340A CN 201810698135 A CN201810698135 A CN 201810698135A CN 108899340 A CN108899340 A CN 108899340A
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- layer
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- groove
- dielectric layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
Flexibility AMOLED display panel provided by the invention, including substrate include viewing area and non-display area on the substrate, are located on the non-display area, buffer layer, gate insulating layer and dielectric layer are sequentially laminated on the substrate；It further include the stepped groove recessed to the buffer layer from the dielectric layer, the hierarchic structure that groove sidewall is buffer layer relatively, gate insulating layer, dielectric layer are formed of two of the stepped groove, the bottom wall of the stepped groove includes multiple spaced binding areas, metal layer is also laminated on the dielectric layer and in stepped groove, each binding area includes the metal area on the buffer area connecting with the substrate and the covering buffer area, wherein, the buffer area is a part of buffer layer.
Description
Technical field
The present invention relates to liquid crystal display manufacturing technology field, in particular to a kind of flexibility AMOLED display panel and its system
Make method.
Background technique
AMOLED (Active-matrix organic light emitting diode) display screen is frivolous with its, bendable
Folding, it is non-friable, it is wearable the advantages that outstanding representative as next-generation display technology, in order to improve the bending performance in binding area,
In the industry using removing inorganic film by the way of binding area's multistep etching, replaced accordingly using the lesser organic film of stress,
Improve the bending performance and stability of product.And when filling inorganic material using organic material of the prior art, need finding property
The energy matched organic material of parameter, it is especially desirable to consider to adapt to high temperature resistance, water imbibition and dielectric constant in follow-up process
Etc. performances, therefore increase AMOLED manufacture difficulty.
Summary of the invention
The purpose of the present invention is to provide a kind of raising bending performance and the flexible AMOLED display panels of simple process.
The present invention provides a kind of flexibility AMOLED display panel production method.
Flexibility AMOLED display panel of the present invention, including substrate, the substrate include viewing area and non-display area,
On the non-display area, buffer layer, gate insulating layer and dielectric layer are sequentially laminated on the substrate and by being given an account of
The electric layer stepped groove recessed to the buffer layer, two of the stepped groove opposite groove sidewalls are that the buffer layer, grid are exhausted
The hierarchic structure that edge layer, dielectric layer are formed, the bottom wall of the stepped groove are the recessed formation of the buffer layer, on the dielectric layer and
Metal routing layer is also laminated in stepped groove, the metal routing layer covers bottom wall and the slot side of the dielectric layer and stepped groove
Wall.
Wherein, the bottom wall of the stepped groove is equipped with the notch at multiple intervals, and the cabling of the metal routing layer includes more
A spaced holes, the notch is opposite with the through-hole and penetrates through.
Wherein, the gate insulating layer is concavely provided with the first through slot, and dielectric layer is concavely provided with third through slot and is located at third
The second through slot in through slot, the groove, the first through slot, the second through slot and third through slot along the vertical substrate direction according to
Secondary connection forms the stepped groove；The buffer layer for exposing first through slot is first step, exposes the grid of second through slot
Pole insulating layer is second step, and the certain media layer for exposing third through slot is third step, and the dielectric layer is connect with metal layer
Part be the 4th step, the metal layer covers the first step, second step, third step and the 4th step.
Wherein, the substrate includes two layers of flexible material layer and the thermal insulation layer that is laminated between two layers of flexible material layer.
Wherein, the bottom wall of the stepped groove with a thickness of 200nm.
Flexibility AMOLED display panel production method of the present invention, including buffer layer, grid are sequentially formed on substrate
Pole insulating layer and dielectric layer；
Form third through slot on the dielectric layer by Patternized technique, wherein third through slot through part dielectric layer；
Another part dielectric layer for exposing the third through slot is patterned, is formed and is led to through the second of dielectric layer
Slot；
The gate insulating layer for exposing second through slot is patterned, it is logical to form first on the gate insulating layer
Slot；
The buffer layer for exposing first through slot is patterned, forms groove, further groove on the buffer layer
Bottom wall be portion of buffer layer, the groove, the first through slot, the second through slot, third through slot formed stepped groove；
Metal routing layer is formed in the stepped groove and on dielectric layer, wherein the cabling of the metal routing layer is equipped with more
A through-hole,
Light shield is carried out to the bottom wall for exposing the groove of the through-hole is located at, forms multiple spaced notches.
Wherein, the buffer layer for exposing first through slot is patterned, forms the step of groove on the buffer layer
In rapid, the bottom wall of the groove is to be patterned rear remaining buffer layer, with a thickness of 200nm.
Wherein, encapsulated layer is also formed on the metal layer, the encapsulated layer covers the metal routing layer and the bottom
The notch of wall.
Wherein, the gate insulating layer includes the first grid insulating layer and second grid insulating layer being stacked.
Wherein, the buffer layer with a thickness of
Flexibility AMOLED display panel of the present invention use on substrate reserved part buffer layer as stepped groove
Bottom wall completely cuts off metal layer and substrate, does not need to fill organic material before non-display area metal layer is formed, it is multiple to reduce technique
Polygamy guarantees the stability of display panel.And the design of notch reduces the stress of reserved part buffer layer, improves display panel
Flexibility.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the schematic cross-section of flexibility AMOLED display panel of the present invention.
Fig. 2 is the flow chart of flexibility AMOLED display panel production method of the present invention.
Fig. 3 to Fig. 8 is that the section of the structure in flexibility AMOLED display panel production method shown in Fig. 2 after each step shows
It is intended to.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 2, the present invention provides a kind of flexibility AMOLED display panel production method, the method includes：
Such as Fig. 3, step S1, buffer layer 11, gate insulating layer 12 and dielectric layer 14 are sequentially formed on the substrate 10；It is given an account of
Electric layer 14 and the buffer layer 11 with a thickness of
Such as Fig. 4, step S2, third through slot 141 is formed on the dielectric layer 14 by Patternized technique, wherein third is logical
141 through part dielectric layer 14 of slot；Patterning described in the present embodiment includes the film layers making technologies such as exposure, development, etching.
The part that the dielectric layer 14 is connect with metal layer 17 is the 4th step T4.
As Fig. 5, step S3 are formed to patterning on another part dielectric layer 14 for exposing the third through slot 141
Through the second through slot 142 of dielectric layer 14.Another part dielectric layer 14 after forming the second through slot 142 exposes the third
The part of through slot 141 forms the third step T3.
Such as Fig. 6, step S4, the gate insulating layer 12 for exposing second through slot 142 is patterned, in the grid
The first through slot 121 is formed on insulating layer；The part for forming 121 post tensioned unbonded prestressed concrete insulating layer 12 of the first through slot the second through slot 142 of exposing is
Second step T2.
Such as Fig. 7, step S5, the buffer layer 11 for exposing first through slot 121 is patterned, in the buffer layer 11
Upper formation groove 112, the bottom wall of further groove 112 are portion of buffer layer.Buffer layer after forming groove 112 exposes the first through slot
Part be first step T1.The groove 112, the first through slot 121, the second through slot 142, third through slot 141 form stepped groove
15, bottom of the groove 112 as stepped groove 15, the bottom wall of groove 112 is exactly the bottom wall of stepped groove 15.Wherein, described recessed
The bottom wall of slot is to be patterned rear remaining buffer layer, with a thickness of 200nm.
Such as Fig. 8, step S6, metal routing layer 17 is formed in the stepped groove 15 and on dielectric layer 14, wherein the gold
The cabling for belonging to routing layer is equipped with multiple through-holes 172.The cabling that the metal routing layer 17 is located at the non-display area can be letter
Number line, pressure-wire etc..The metal routing layer 17 covers the groove sidewall of the stepped groove 15 and the surface of bottom wall and dielectric layer 14
Surface.Why form using groove is selected in step S5, on buffer layer 11, and the simultaneously through slot of non-through buffer layer, just
It is that the metal routing layer 17 and the substrate 10 is isolated in order to reserve a part of buffer layer, prevents the formation of metal routing layer 17
When damage to substrate 10.In metal routing layer formation process, walked including the metal to the bottom wall for being located at the stepped groove 15
Line layer 17 is etched, and forms multiple spaced through-holes 172；Each through-hole 172 exposes the bottom of the groove 112
Wall, that is, remaining buffer layer.
Refering to fig. 1, step S7 carries out light shield to the bottom wall for exposing the groove 112 of the through-hole 172 is located at, is formed multiple
The spaced notch 16 with the through-hole 172 perforation, projection are located in the through-hole 172, and the notch 16 exposes institute
State substrate 10.The notch 16 can reduce the stress of groove bottom wall position.
This method further includes that encapsulated layer (not shown) is formed on the metal layer, and the encapsulated layer covers the metal and walks
The through-hole 172 and notch 16 of line layer 17.
Flexibility AMOLED display panel of the present invention regard the reserved a part in the buffer area of non-display area as isolated substrate
With the wall of metal layer, the damage in metal layer formation to substrate can be prevented, while meeting non-display flexibility, no
Influence its bending performance.
Further, flexibility AMOLED display panel of the present invention can solve the prior art in non-display area (bending
Area) increased organic incident metal layer of photoresist and ODH surface adhesion difference and the resistance to cleaning ability difference of ODH generate it is existing
As the present invention can cancel the influence of the harsher ODH material of condition, pass through the tune of stepped groove aperture widths and the ladder angle of the v-groove
Section, makes metal layer be in neutral surface, is more advantageous to the importing and reliability demonstration of this structure
In conjunction with the above method, referring to Fig. 1, the present invention provides a kind of flexibility AMOLED display panel, including protection panels
And substrate.It include viewing area (not shown) and non-display area (figure is mark) on the substrate, referring to Fig. 1, in the present embodiment, position
In on the non-display area, that is, flexibility AMOLED display panel flexibility bent area, it is sequentially laminated on the substrate 10 slow
Layer 11, gate insulating layer 12 and dielectric layer 14 and the stepped groove 15 recessed to the buffer layer 11 from the dielectric layer 14 are rushed,
The hierarchic structure that groove sidewall is buffer layer 11 relatively, gate insulating layer 12, dielectric layer 14 are formed of two of the stepped groove 15, institute
The bottom wall for stating stepped groove 15 is the recessed formation of the buffer layer 11, i.e., the described bottom wall is remaining after the formation stepped groove of buffer layer 11
A part.Metal routing layer 17 is also laminated on the dielectric layer 14 and in stepped groove, the metal routing layer 17 covers described
The bottom wall and groove sidewall of dielectric layer 14 and stepped groove 15.The bottom wall of the stepped groove 15 is equipped with the notch 16 at multiple intervals, institute
The cabling for stating metal routing layer 17 includes multiple spaced holes 172, and the notch 16 is opposite with the through-hole 172 and penetrates through.
Specifically, the bottom wall thickness of the stepped groove 15 is 200nm, the flexibility that both will not influence the region will not increase
Add difficulty of processing, is made of SiNx or SiO2.The gate insulating layer 12 includes the first grid insulating layer that is stacked and the
Two gate insulating layers；It is made of SiNx or SiO2.The substrate includes two layers of flexible material layer and is laminated in two sheets of flexible material
Thermal insulation layer between the bed of material, two layers of flexible material layer are mainly PI, the materials such as PET.
In the present embodiment, the stepped groove 15 includes the groove 112 that is formed on the buffer layer 11, and groove 112
Bottom wall forms the notch 16.Namely when forming the stepped groove 15,11 portion concave of buffer layer forms described recessed
Slot as stepped groove bottom.
In the present embodiment, the gate insulating layer 12 is concavely provided with the first through slot 121, and it is logical that dielectric layer 14 is concavely provided with third
Slot 141 and the second through slot 142 in third through slot 141, the groove 112, the first through slot 121, the second through slot 142 and
Three through slots 141 are sequentially communicated to form the stepped groove 15 along the direction of the vertical substrate 10；The bottom wall of the groove 112 is
It is the bottom wall of stepped groove 15.The buffer layer 11 for exposing first through slot 112 is first step T1, exposes second through slot
142 gate insulating layer is second step T2, and the certain media layer for exposing third through slot 141 is third step T3, the medium
14 part that connect with metal routing layer 17 of layer are the 4th step T4, the metal routing layer 17 cover the first step T1,
Second step T2, third step T3 and the 4th step T4.The first step T1, second step T2, third step T3 and the 4th
The design of the bottom wall of step T4 and groove 112, the layer that actually can be metal layer 11 are closely located in neutral surface, improve
The flexibility of non-display area guarantees stability.
In the present invention, using bottom wall of the reserved part buffer layer 11 as stepped groove on substrate, by metal routing layer 17
Completely cut off with substrate, avoids metal layer from generating pollution to substrate during molding and etching, do not need in non-display area metal
Layer fills organic material before being formed, and reduces process complexity, guarantees the stability of display panel.And the bottom wall of stepped groove has
For multiple spaced notches 16, the stress of reserved part buffer layer 11 is reduced, the non-display area of display panel is improved
Flexibility.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, those skilled in the art can understand all or part of the processes for realizing the above embodiment, and wants according to right of the present invention
Made equivalent variations is sought, is still belonged to the scope covered by the invention.
Claims (10)
1. a kind of flexibility AMOLED display panel, which is characterized in that including substrate, the substrate includes viewing area and non-display
Area is located on the non-display area, buffer layer, gate insulating layer and dielectric layer is sequentially laminated on the substrate and by described
The dielectric layer stepped groove recessed to the buffer layer, two of the stepped groove are opposite, and groove sidewall is the buffer layer, grid
The hierarchic structure that insulating layer, dielectric layer are formed, the bottom wall of the stepped groove are the recessed formation of the buffer layer, on the dielectric layer
And metal routing layer is also laminated in stepped groove, the metal routing layer covers bottom wall and the slot side of the dielectric layer and stepped groove
Wall.
2. flexibility AMOLED display panel according to claim 1, which is characterized in that the bottom wall of the stepped groove is equipped with
The notch at multiple intervals, the cabling of the metal routing layer include multiple spaced holes, the notch it is opposite with the through-hole and
Perforation.
3. flexibility AMOLED display panel according to claim 2, which is characterized in that the gate insulating layer is concavely provided with
First through slot, dielectric layer are concavely provided with third through slot and the second through slot in third through slot, the groove, the first through slot,
Second through slot and third through slot are sequentially communicated to form the stepped groove along the direction of the vertical substrate；It is logical to expose described first
The buffer layer of slot is first step, and the gate insulating layer for exposing second through slot is second step, exposes the portion of third through slot
Dividing dielectric layer is third step, and the part that the dielectric layer is connect with metal layer is the 4th step, described in the metal layer covering
First step, second step, third step and the 4th step.
4. flexibility AMOLED display panel according to claim 1, which is characterized in that the substrate includes two sheets of flexible material
The bed of material and the thermal insulation layer being laminated between two layers of flexible material layer.
5. flexibility AMOLED display panel production method according to claim 1, which is characterized in that the bottom of the stepped groove
Wall with a thickness of 200nm.
6. a kind of flexibility AMOLED display panel production method, which is characterized in that including sequentially forming buffer layer, grid on substrate
Pole insulating layer and dielectric layer；
Form third through slot on the dielectric layer by Patternized technique, wherein third through slot through part dielectric layer；
Another part dielectric layer for exposing the third through slot is patterned, the second through slot for running through dielectric layer is formed；
The gate insulating layer for exposing second through slot is patterned, forms the first through slot on the gate insulating layer；
The buffer layer for exposing first through slot is patterned, forms groove, the bottom of further groove on the buffer layer
Wall is portion of buffer layer, and the groove, the first through slot, the second through slot, third through slot form stepped groove；
Metal routing layer is formed in the stepped groove and on dielectric layer, wherein the cabling of the metal routing layer is equipped with multiple lead to
Hole,
Light shield is carried out to the bottom wall for exposing the groove of the through-hole is located at, forms multiple spaced notches.
7. flexibility AMOLED display panel production method according to claim 6, which is characterized in that exposing described first
The buffer layer of through slot is patterned, and in the step of forming groove on the buffer layer, the bottom wall of the groove is by pattern
Remaining buffer layer after change, with a thickness of 200nm.
8. flexibility AMOLED display panel production method according to claim 6, which is characterized in that on the metal layer also
It is formed with encapsulated layer, the encapsulated layer covers the notch of the metal routing layer and the bottom wall.
9. flexibility AMOLED display panel production method according to claim 6, which is characterized in that the gate insulating layer
Including the first grid insulating layer and second grid insulating layer being stacked.
10. flexibility AMOLED display panel production method according to claim 6, which is characterized in that the buffer layer
With a thickness of
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| WO2022056789A1 (en) * | 2020-09-17 | 2022-03-24 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
| CN114514612A (en) * | 2020-09-17 | 2022-05-17 | 京东方科技集团股份有限公司 | Display panel and display device |
| US11844250B2 (en) | 2020-09-17 | 2023-12-12 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel including grooved inorganic layer in bending area and display device including display panel |
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