CN108896222B - Pressure sensor and method for detecting pressure by using same - Google Patents
Pressure sensor and method for detecting pressure by using same Download PDFInfo
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- CN108896222B CN108896222B CN201810847853.7A CN201810847853A CN108896222B CN 108896222 B CN108896222 B CN 108896222B CN 201810847853 A CN201810847853 A CN 201810847853A CN 108896222 B CN108896222 B CN 108896222B
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
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Abstract
The invention discloses a pressure sensor and a method for detecting pressure, the pressure sensor includes: the interference filter structure is positioned between the first substrate and the second substrate, and the photosensitive element is positioned on one side of the second substrate, which is far away from the first substrate; the interference filter structure has a self-luminous part generating multi-beam interference therein; the interference filtering structure generates thickness deformation according to the received external pressure, so that self-luminescence after multi-beam interference is converted into emergent light with brightness related to the thickness of the interference filtering structure; the photosensitive element is used for detecting the emitted light and generating an electric signal representing the corresponding pressure according to the emitted light. Because the thickness of the interference filter structure is related to the external pressure, the self-luminescence after multi-beam interference can be converted into emergent light with the brightness related to the thickness, and the bright fringes of the emergent light formed by the multi-beam interference are fine and sharp, the photosensitive element can easily detect the emergent light, and the high resolution and the high sensitivity of pressure detection are realized.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a pressure sensor and a method for detecting pressure by the same.
Background
The pressure sensor is a sensing device commonly used in production and life, and is widely applied to various self-control environments. The traditional pressure sensor mainly uses a mechanical structure type device, and indicates pressure by deformation of an elastic element, but the sensor structure is large in size and heavy in weight, and cannot provide electrical output. With the development of new material technology, new sensors are also produced. A piezoelectric pressure sensor is a sensor that converts a measured pressure into an electric signal using the piezoelectric effect of a piezoelectric material. The piezoelectric pressure sensor giant head has the advantages of small volume, simple structure and capability of providing electrical output, and is the most widely used pressure sensor. However, the piezoelectric pressure sensor still has the following disadvantages: the resolution ratio is low, the method is insensitive to micro strain, and the method cannot respond well to the measurement of micro force values.
Disclosure of Invention
The embodiment of the invention provides a pressure sensor and a method for detecting pressure by using the same, which are used for solving the problems of low resolution and insensitivity to micro strain of the pressure sensor in the prior art.
An embodiment of the present invention provides a pressure sensor, including: the optical filter comprises a first substrate, a second substrate, an interference filtering structure and a photosensitive element, wherein the first substrate and the second substrate are oppositely arranged, the interference filtering structure is positioned between the first substrate and the second substrate, and the photosensitive element is positioned on one side of the second substrate, which is far away from the first substrate;
wherein the interference filter structure has a self-luminous part generating multi-beam interference therein; the interference filtering structure generates thickness deformation according to the received external pressure, so that self-luminescence after multi-beam interference is converted into emergent light with brightness related to the thickness of the interference filtering structure;
the photosensitive element is used for detecting the emitted light and generating an electric signal representing the corresponding pressure according to the emitted light.
In a possible implementation manner, in the above pressure sensor provided in an embodiment of the present invention, the interference filter structure includes: the light-emitting device is positioned on one side of the first substrate facing the second substrate, the elastic supporting unit covers one side of the first substrate facing the second substrate and covers the light-emitting device, and the reflector is positioned on one side of the elastic supporting unit departing from the first substrate;
the light-emitting device comprises a metal anode, an organic functional layer and a semitransparent cathode which are sequentially stacked on the first substrate; the elastic supporting unit is made of elastic transparent materials; the reflecting surface of the reflector faces the first substrate.
In a possible implementation manner, in the pressure sensor provided in the embodiment of the present invention, when the interference filter structure does not receive the external pressure, a thickness of the interference filter structure is equal to a distance between the mirror and the metal anode.
In a possible implementation manner, in the above pressure sensor provided in an embodiment of the present invention, the interference filter structure includes: the light-emitting device and the elastic supporting unit are positioned on one side of the first substrate facing the second substrate, and the reflector is positioned on one side of the second substrate facing the first substrate;
the light-emitting device comprises a metal anode, an organic functional layer and a semitransparent cathode which are sequentially stacked on the first substrate; the reflecting surface of the reflector faces the first substrate; the elastic supporting unit, the metal anode and the reflector enclose a hollow cavity structure.
In a possible implementation manner, in the pressure sensor provided in the embodiment of the present invention, when the interference filter structure does not receive the external pressure, the thickness of the interference filter structure is the cavity length of the hollow cavity structure, and is equal to the distance between the reflector and the metal anode.
In a possible implementation manner, in the pressure sensor provided in an embodiment of the present invention, the hollow cavity structure is filled with nitrogen or air.
In a possible implementation manner, in the pressure sensor provided in the embodiment of the present invention, the photosensitive element includes a photodiode and a chip that are connected to each other;
the photosensitive diode is used for detecting emergent light and forming a current signal or a voltage signal corresponding to the emergent light;
the chip is used for outputting an electric signal representing corresponding pressure according to the current signal or the voltage signal and the one-to-one correspondence relationship between the current signal or the voltage signal and the pressure prestored in the chip.
In a possible implementation manner, in the pressure sensor provided in an embodiment of the present invention, the photosensitive element includes a first photodiode, a second photodiode, and a chip respectively connected to the first photodiode and the second photodiode;
the first photosensitive diode is used for detecting emergent light forming a first included angle with the horizontal direction and forming a first current signal or a first voltage signal corresponding to the detected emergent light;
the second photosensitive diode is used for detecting emergent light forming a second included angle with the horizontal direction and forming a second current signal or a second voltage signal corresponding to the detected emergent light;
the chip is used for outputting an electric signal representing corresponding pressure according to a first ratio of the first current signal to the second current signal and a one-to-one correspondence relationship between the first ratio and the pressure prestored in the chip; or the chip is used for outputting an electric signal representing corresponding pressure according to a second ratio of the first voltage signal to the second voltage signal and a one-to-one correspondence relationship between the second ratio and the pressure prestored in the chip.
Based on the same inventive concept, an embodiment of the present invention further provides a method for detecting pressure by using the pressure sensor, including:
the first photosensitive diode detects emergent light forming a first included angle with the horizontal direction and forms a first current signal or a first voltage signal corresponding to the detected emergent light;
the second photosensitive diode detects emergent light forming a second included angle with the horizontal direction and forms a second current signal or a second voltage signal corresponding to the detected emergent light;
the chip outputs an electric signal representing corresponding pressure according to a first ratio of the first current signal to the second current signal and a one-to-one correspondence relationship between the first ratio and the pressure prestored in the chip; or the chip outputs an electric signal representing corresponding pressure according to a second ratio of the first voltage signal to the second voltage signal and a one-to-one correspondence relationship between the second ratio and the pressure prestored in the chip.
The embodiment of the invention has the beneficial effects that:
the embodiment of the invention provides a pressure sensor and a method for detecting pressure by the same, wherein the pressure sensor comprises: the optical filter comprises a first substrate, a second substrate, an interference filtering structure and a photosensitive element, wherein the first substrate and the second substrate are oppositely arranged, the interference filtering structure is positioned between the first substrate and the second substrate, and the photosensitive element is positioned on one side of the second substrate, which is far away from the first substrate; wherein the interference filter structure has a self-luminous part generating multi-beam interference therein; the interference filtering structure generates thickness deformation according to the received external pressure, so that self-luminescence after multi-beam interference is converted into emergent light with brightness related to the thickness of the interference filtering structure; the photosensitive element is used for detecting the emitted light and generating an electric signal representing the corresponding pressure according to the emitted light. Because the thickness of the interference filter structure is related to the external pressure, and the self-luminescence of the interference filter structure can be converted into emergent light with the brightness related to the thickness of the interference filter structure after multi-beam interference, the brightness of the emergent light is related to the external pressure, and the bright fringes of the emergent light formed by multi-beam interference are sharp, so that the photosensitive element can easily detect the emergent light with the brightness related to the external pressure, and the high resolution and the high sensitivity of pressure detection are realized.
Drawings
Fig. 1 to fig. 4 are schematic structural diagrams of a pressure sensor according to an embodiment of the present invention;
FIG. 5 is a graph showing the relationship between the luminance of the emitted light and the emission angle at different thicknesses (i.e., the distance between the reflector and the metal anode) according to the embodiment of the present invention;
fig. 6 is a flowchart of a method for manufacturing a pressure sensor according to an embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of a pressure sensor and a method for detecting pressure thereof according to an embodiment of the present invention with reference to the accompanying drawings. It should be noted that the embodiments described in this specification are only a part of the embodiments of the present invention, and not all embodiments; and in case of conflict, the embodiments and features of the embodiments in the present application may be combined with each other; moreover, all other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative effort belong to the protection scope of the present invention.
The shape and size of the various membrane layers in the drawings are not intended to reflect the true scale of the pressure sensor, but are merely illustrative of the present invention.
Example one
Fig. 1 shows a pressure sensor according to a first embodiment of the present invention. The pressure sensor includes: the optical filter comprises a first substrate 101 and a second substrate 102 which are oppositely arranged, an interference filter structure 103 positioned between the first substrate 101 and the second substrate 102, and a photosensitive element 104 positioned on one side of the second substrate 102, which is far away from the first substrate 101;
wherein the interference filter structure 103 has a self-light emitting part generating multi-beam interference therein; the interference filter structure 103 generates thickness deformation according to the received external pressure, so that self-luminescence after multi-beam interference is converted into emergent light with brightness related to the thickness of the interference filter structure 103;
the light receiving element 104 detects the emitted light and generates an electrical signal representing the corresponding pressure from the emitted light.
In the pressure sensor provided in the first embodiment of the present invention, since the thickness of the interference filter structure 103 is related to the external pressure, and the self-luminescence of the interference filter structure 103 can be converted into the emergent light with the brightness related to the thickness of the interference filter structure 103 after the multi-beam interference occurs, based on this, the brightness of the emergent light is related to the external pressure, and the bright fringes of the emergent light formed by the multi-beam interference are sharp, so that the photosensitive element 104 can easily detect the emergent light with the brightness related to the external pressure, thereby implementing the high resolution and the high sensitivity of the pressure detection.
Specifically, in the pressure sensor provided in the first embodiment of the present invention, as shown in fig. 1, the interference filter structure 103 includes: a light emitting device 1031 and an elastic supporting unit 1032 on a side of the first substrate 101 facing the second substrate 102, and a mirror 1033 on a side of the second substrate 102 facing the first substrate 101;
the light emitting device 1031 includes a metal anode, an organic functional layer, and a translucent cathode sequentially stacked on the first substrate 101, wherein when a voltage difference exists between the metal anode and the translucent cathode, the organic functional layer emits light and emits light from the translucent cathode; specifically, the organic functional layer includes an electron injection layer, an electron transport layer, an organic light emitting layer, a hole transport layer, and a hole injection layer.
It is understood that the reflecting surface of the mirror 1033 faces the first substrate 101, so that the light emitted from the semitransparent cathode is incident on the mirror 1033, multiple beam interference is formed between the mirror 1033 and the metal anode, and finally the light subjected to the multiple beam interference is emitted from the second substrate 102 side to be detected by the photosensitive element 104.
In addition, the elastic supporting unit 1032, the metal anode, and the reflector 1033 enclose a hollow cavity structure, and the hollow cavity structure is filled with transparent gas such as nitrogen or air. And since the light emitted from the light emitting device 1031 can directly irradiate the reflector 1033 through the transparent gas and generate multi-beam interference under the action of the reflector 1033 and the metal anode, the material of the elastic supporting unit 1032 may be transparent or opaque, which is not limited herein.
As is apparent from the above description, light emitted from the light emitting device 1031 forms multi-beam interference between the mirror 1033 and the metal anode, so that in actual use, the luminance of outgoing light detected by the light sensing element 104 by the action of the multi-beam interference is regulated by the distance between the mirror 1033 and the metal anode. In the pressure sensor according to the first embodiment of the present invention, as shown in fig. 1, when the interference filter structure 103 does not receive the external pressure (i.e., the external pressure is not loaded on the pressure sensor), the thickness of the interference filter structure 103 is the cavity length of the hollow cavity structure and is equal to the distance L between the reflector 1033 and the metal anode; and the distance L is effectively changed with the change of the vertically applied pressure on the pressure sensor during the actual detection of the pressure.
In the pressure sensor provided in the first embodiment of the present invention, as shown in fig. 1, the photosensitive element 104 includes a photodiode and a chip (not shown in the figure) connected to each other;
the photosensitive diode is used for detecting emergent light and forming a current signal or a voltage signal corresponding to the emergent light;
the chip (not shown in the figure) is used for outputting an electric signal representing corresponding pressure according to the current signal or the voltage signal and the one-to-one correspondence relationship between the current signal or the voltage signal and the pressure, which is prestored in the chip (not shown in the figure).
Example two
As shown in fig. 2, the pressure sensor provided in the second embodiment of the present invention is similar to the pressure sensor shown in fig. 1, and the pressure sensor are different only in the specific structure of the interference filter structure 103, so only the differences will be described below, and the repeated points can refer to the first embodiment, and are not described herein again.
In the pressure sensor according to the second embodiment of the present invention, as shown in fig. 2, the interference filter structure 103 includes: a resilient support unit 1032 on the first substrate 101 covering the light emitting device 1031 on the side of the first substrate 101 facing the second substrate 102 and covering the light emitting device 1031, and a mirror 1033 on the side of the resilient support unit 1032 facing away from the first substrate 101;
the light emitting device 1031 includes a metal anode, an organic functional layer, and a translucent cathode sequentially stacked on the first substrate 101; the reflecting surface of the mirror 1033 faces the first substrate 101; when the interference filter structure 103 does not receive the external pressure (i.e., the external pressure is not applied to the pressure sensor), the thickness of the interference filter structure 103 is equal to the distance L between the mirror 1033 and the metal anode.
In addition, the elastic supporting unit 1032 may be made of an elastic transparent material so that the interference filter structure 103 may deform in thickness under the action of a slight pressure. For example, the elastic supporting unit 1032 may be made of a transparent material with a higher young's modulus of elasticity, so that the interference filter structure 103 may be effectively elastically deformed under the action of a small external pressure due to the existence of the elastic supporting unit 1032; in addition, since the elastic supporting unit 1032 is transparent, the light emitted from the semitransparent cathode can be irradiated to the reflector 1033 through the elastic supporting unit 1032.
EXAMPLE III
As shown in fig. 3, the pressure sensor provided in the third embodiment of the present invention is similar to the pressure sensor shown in fig. 1, and the pressure sensor are different only in the specific structure of the photosensitive element 104, so that only the differences will be described below, and the repeated points can refer to the first embodiment, and are not described herein again.
Since the light emission luminance of the light emitting device 1031 depends on the current flowing through the light emitting device 1031, the magnitude of the current is not only related to the voltage difference between the metal anode and the translucent cathode, but also susceptible to the external environment such as a magnetic field. Therefore, in the first and second embodiments, when the emitted light emitted from the light emitting device 1031 and obtained by multi-beam interference is detected by only one photodiode, it is not possible to distinguish whether the detected change in the brightness of the emitted light is caused by the change in the thickness of the interference filter structure 103 or by the effect of the external environment, such as a magnetic field. Therefore, to avoid the interference of the external factors, in the third embodiment of the present invention, as shown in fig. 3, the photosensitive element 104 includes a first photodiode 1041, a second photodiode 1042, and chips (not shown) respectively connected to the first photodiode 1041 and the second photodiode 1042;
the first photodiode 1041 is configured to detect an outgoing light beam forming a first included angle with a horizontal direction, and form a first current signal or a first voltage signal corresponding to the detected outgoing light beam;
the second photodiode 1042 is configured to detect an outgoing light that forms a second included angle with the horizontal direction, and form a second current signal or a second voltage signal corresponding to the detected outgoing light;
the chip is used for outputting an electric signal representing corresponding pressure according to a first ratio of the first current signal to the second current signal and a one-to-one correspondence relationship between the first ratio and the pressure prestored in the chip; or the chip is used for outputting an electric signal representing the corresponding pressure according to a second ratio of the first voltage signal to the second voltage signal and a one-to-one correspondence relationship between the second ratio and the pressure prestored in the chip.
In order to better understand the technical solution of the third embodiment of the present invention, the following describes in detail the principle that the pressure sensor shown in fig. 3 can improve the accuracy of pressure detection.
The Fabry-Perot interference principle gives the thickness of the interference filter structure 103 (i.e. the distance L between the mirror 1033 and the metal anode) versus the transmitted maximum center wavelength λcThe influence of (a):
λc＝2nCosθ/m
where n is a refractive index of the dielectric layer (i.e., the elastic supporting unit 1032 made of a transparent material or the transparent gas filled in the interference filtering cavity), θ is an exit angle of the outgoing light detected by the photosensitive element 104, and m is 1, 2, 3 … …. From the above formula, the distance L between the reflector 1033 and the metal anode and the exit angle θ of the exit light detected by the photosensitive element 104 both affect the transmission maximum center wavelength λc. If at the maximum central wavelength λ of transmissioncThe maximum central wavelength λ of transmission is set by taking the case of overlapping the spectrum of the light emitted from the light emitting device 1031 (the luminance of the emitted light detected by the light receiving element 104 is maximum) as an examplecWhen the distance L between the reflector 1033 and the metal anode changes due to the external pressure, the emitting angle θ with the maximum emitting light brightness inevitably changes.
Fig. 5 is a graph of the relationship between the luminance of the emitted light and the emission angle at different thicknesses (i.e., the distance L between the reflector 1033 and the metal anode) obtained by software fitting. The luminescent device 1031 in the pressure sensor for fitting emits red light, the reflecting surface of the reflector 1033 is a silver film with the thickness of 30nm, and the transparent gas filled in the interference filtering cavity is air. As can be seen from fig. 5, when the distance L between the mirror 1033 and the metal anode is changed from L0 to L1, L2, and L3 in this order, the emission angle θ at which the maximum luminance of the emitted light is obtained gradually increases. And there is a one-to-one correspondence between the emission luminance and the distances L (specifically, L0, L1, L2, and L3) of the mirror 1033 from the metal anode while the emission angle θ remains unchanged (e.g., θ equals 45 °). Therefore, when the first photodiode 1041 detects the outgoing light with a first angle with the horizontal direction and the second photodiode 1042 detects the outgoing light with a second angle with the horizontal direction, when the distance L between the reflector 1033 and the metal anode is a certain value, the outgoing light intensities detected by the first photodiode 1041 and the second photodiode 1042 respectively have a fixed ratio. Taking the example that the distance L between the reflector 1033 and the metal anode is L0 ═ 212nm, the first included angle is 45 °, and the second included angle is 0 °, it can be seen from table i that the ratio (i.e., the enhancement factor) of the luminance of the emergent light detected by the first photodiode 1041 and the luminance of the emergent light detected by the second photodiode 1042 is 1.56; when the distance L between the reflector 1033 and the metal anode is L1 ═ 214nm, the first included angle is 45 °, and the second included angle is 0 °, as shown in table i, the ratio (i.e., the enhancement factor) of the luminance of the emergent light detected by the first photodiode 1041 and the second photodiode 1042, respectively, is 2.31; when the distance L between the reflector 1033 and the metal anode is L2 nm, the first included angle is 45 °, and the second included angle is 0 °, as shown in table i, the ratio (i.e., the enhancement factor) of the luminance of the emergent light detected by the first photodiode 1041 and the luminance of the emergent light detected by the second photodiode 1042 are 3.23; when the distance L between the reflector 1033 and the metal anode is L3 ═ 218nm, the first included angle is 45 °, and the second included angle is 0 °, as shown in table i, the ratio (i.e., the enhancement factor) of the luminance of the outgoing light detected by the first photodiode 1041 and the luminance of the outgoing light detected by the second photodiode 1042 are 4.23.
Watch 1
| Thickness symbol | L0 | L1 | L2 | L3 |
| Size of thickness | 212nm | 214nm | 216nm | 218nm |
| |
45° | 45° | 45° | 45° |
| Multiple of enhancement | 1.56 | 2.31 | 3.23 | 4.23 |
As can be seen from the above description, the distance L between the reflector 1033 and the metal anode is related to the external pressure, so that the ratio of the light intensities detected by the first photodiode 1041 and the second photodiode 1042 is related to the external pressure, and thus, the external pressure can be detected by identifying the ratio of the light intensities detected by the first photodiode 1041 and the second photodiode 1042 through the chip. And since the ratio is only related to the distance L of the mirror 1033 from the metal anode, and is not related to other environmental factors such as a magnetic field, the accuracy of pressure detection is improved.
Example four
As shown in fig. 4, compared with the pressure sensor (shown in fig. 2) provided in the second embodiment of the present invention, the pressure sensor provided in the fourth embodiment of the present invention has a different specific structure of only the photosensitive element 104, and the specific structure of the photosensitive element 104 of the pressure sensor is the same as the photosensitive element 104 of the pressure sensor (shown in fig. 3) provided in the third embodiment of the present invention, so that the detailed implementation process of the pressure sensor provided in the fourth embodiment of the present invention can refer to the repeated parts of the second embodiment and the third embodiment, and is not repeated herein.
EXAMPLE five
Based on the same inventive concept, embodiments of the present invention provide a method for detecting pressure by using the pressure sensor shown in fig. 3 and fig. 4, and because the principle of solving the problem by the method is similar to the principle of solving the problem by using the pressure sensor, the implementation of the method provided by embodiments of the present invention may refer to the implementation of the pressure sensor provided by embodiments of the present invention, and repeated details are omitted.
As shown in fig. 6, a flow chart of a method for detecting pressure by the pressure sensor shown in fig. 3 and 4 is provided for the embodiment of the present invention. As shown in fig. 6, the manufacturing method may specifically include the following steps:
s601, detecting emergent light forming a first included angle with the horizontal direction by a first photosensitive diode, and forming a first current signal or a first voltage signal corresponding to the detected emergent light;
s602, detecting emergent light forming a second included angle with the horizontal direction by a second photosensitive diode, and forming a second current signal or a second voltage signal corresponding to the detected emergent light;
s603, outputting an electric signal representing corresponding pressure by the chip according to a first ratio of the first current signal to the second current signal and a one-to-one correspondence relationship between the first ratio and the pressure prestored in the chip; or the chip outputs an electric signal representing the corresponding pressure according to a second ratio of the first voltage signal to the second voltage signal and a one-to-one correspondence relationship between the second ratio and the pressure prestored in the chip.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (7)
1. A pressure sensor, comprising: the optical filter comprises a first substrate, a second substrate, an interference filtering structure and a photosensitive element, wherein the first substrate and the second substrate are oppositely arranged, the interference filtering structure is positioned between the first substrate and the second substrate, and the photosensitive element is positioned on one side of the second substrate, which is far away from the first substrate;
wherein the interference filter structure has a self-luminous part generating multi-beam interference therein; the interference filtering structure generates thickness deformation according to the received external pressure, so that self-luminescence after multi-beam interference is converted into emergent light with brightness related to the thickness of the interference filtering structure;
the photosensitive element is used for detecting the emitted light and generating an electric signal representing the corresponding pressure according to the emitted light;
the photosensitive element comprises a first photosensitive diode, a second photosensitive diode and chips respectively connected with the first photosensitive diode and the second photosensitive diode;
the first photosensitive diode is used for detecting emergent light forming a first included angle with the horizontal direction and forming a first current signal or a first voltage signal corresponding to the detected emergent light;
the second photosensitive diode is used for detecting emergent light forming a second included angle with the horizontal direction and forming a second current signal or a second voltage signal corresponding to the detected emergent light;
the chip is used for outputting an electric signal representing corresponding pressure according to a first ratio of the first current signal to the second current signal and a one-to-one correspondence relationship between the first ratio and the pressure prestored in the chip; or the chip is used for outputting an electric signal representing corresponding pressure according to a second ratio of the first voltage signal to the second voltage signal and a one-to-one correspondence relationship between the second ratio and the pressure prestored in the chip.
2. The pressure sensor of claim 1, wherein the interference filtering structure comprises: the light-emitting device is positioned on one side of the first substrate facing the second substrate, the elastic supporting unit covers one side of the first substrate facing the second substrate and covers the light-emitting device, and the reflector is positioned on one side of the elastic supporting unit departing from the first substrate;
the light-emitting device comprises a metal anode, an organic functional layer and a semitransparent cathode which are sequentially stacked on the first substrate; the elastic supporting unit is made of elastic transparent materials; the reflecting surface of the reflector faces the first substrate.
3. The pressure sensor of claim 2, wherein the thickness of the interference filter structure is equal to the distance between the mirror and the metal anode when the interference filter structure is not receiving ambient pressure.
4. The pressure sensor of claim 1, wherein the interference filtering structure comprises: the light-emitting device and the elastic supporting unit are positioned on one side of the first substrate facing the second substrate, and the reflector is positioned on one side of the second substrate facing the first substrate;
the light-emitting device comprises a metal anode, an organic functional layer and a semitransparent cathode which are sequentially stacked on the first substrate; the reflecting surface of the reflector faces the first substrate; the elastic supporting unit, the metal anode and the reflector enclose a hollow cavity structure.
5. The pressure sensor of claim 4, wherein the thickness of the interference filter structure is equal to the cavity length of the hollow cavity structure and the distance between the reflector and the metal anode when the interference filter structure does not receive the external pressure.
6. The pressure sensor of claim 4, wherein the hollow cavity structure is filled with nitrogen or air.
7. A method of detecting pressure using the pressure sensor of claim 1, comprising:
the first photosensitive diode detects emergent light forming a first included angle with the horizontal direction and forms a first current signal or a first voltage signal corresponding to the detected emergent light;
the second photosensitive diode detects emergent light forming a second included angle with the horizontal direction and forms a second current signal or a second voltage signal corresponding to the detected emergent light;
the chip outputs an electric signal representing corresponding pressure according to a first ratio of the first current signal to the second current signal and a one-to-one correspondence relationship between the first ratio and the pressure prestored in the chip; or the chip outputs an electric signal representing corresponding pressure according to a second ratio of the first voltage signal to the second voltage signal and a one-to-one correspondence relationship between the second ratio and the pressure prestored in the chip.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110522424B (en) * | 2019-08-21 | 2020-12-29 | 清华大学 | Novel pressure sensor and physiological signal measuring method thereof |
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| CN111637956B (en) * | 2020-05-25 | 2021-11-16 | 湖北交投智能检测股份有限公司 | Bridge span monitoring system and monitoring method based on polarized light |
| KR20220028348A (en) * | 2020-08-28 | 2022-03-08 | 삼성전자주식회사 | Stretchable strain sensor and combination sensor and display panel and device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1982984A (en) * | 2005-12-13 | 2007-06-20 | 群康科技(深圳)有限公司 | Negative-light mould set and its liquid-crystal display device |
| CN101688991A (en) * | 2007-06-22 | 2010-03-31 | 3M创新有限公司 | Systems and methods for controlling backlight output characteristics |
| CN102913816A (en) * | 2012-09-28 | 2013-02-06 | 京东方科技集团股份有限公司 | Sidelight type backlight module and liquid crystal display device |
| CN103649619A (en) * | 2011-07-29 | 2014-03-19 | 东芝照明技术株式会社 | Light-emitting device and illumination device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
| US7421001B2 (en) * | 2006-06-16 | 2008-09-02 | Pbc Lasers Gmbh | External cavity optoelectronic device |
| EP2446238B1 (en) * | 2009-06-23 | 2016-08-03 | Imec | Optical tactile sensors |
| CN103296182B (en) * | 2012-03-01 | 2016-09-21 | 展晶科技(深圳)有限公司 | Light-emitting diode lamp source device |
| CN104992627B (en) * | 2015-07-29 | 2018-11-06 | 敦泰电子有限公司 | Display module with pressure detector |
| CN205720987U (en) * | 2016-05-05 | 2016-11-23 | 深圳市盛波光电科技有限公司 | Liquid crystal display and Polarizer thereof |
| CN106124096B (en) * | 2016-06-12 | 2019-03-12 | 京东方科技集团股份有限公司 | Optical microcavity, force measuring device and method, modulus measurement method and display panel |
| CN106652815B (en) * | 2016-12-13 | 2019-03-15 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN107421681B (en) * | 2017-07-31 | 2019-10-01 | 京东方科技集团股份有限公司 | A kind of pressure sensor and preparation method thereof |
| CN108287944B (en) * | 2017-12-29 | 2020-11-24 | 华中科技大学 | OLED structure size optimization design method and device |
| CN107917672B (en) * | 2018-01-05 | 2023-06-13 | 中国计量大学 | Test method for improving test sensitivity of ultrathin metal film |
-
2018
- 2018-07-27 CN CN201810847853.7A patent/CN108896222B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1982984A (en) * | 2005-12-13 | 2007-06-20 | 群康科技(深圳)有限公司 | Negative-light mould set and its liquid-crystal display device |
| CN101688991A (en) * | 2007-06-22 | 2010-03-31 | 3M创新有限公司 | Systems and methods for controlling backlight output characteristics |
| CN103649619A (en) * | 2011-07-29 | 2014-03-19 | 东芝照明技术株式会社 | Light-emitting device and illumination device |
| CN102913816A (en) * | 2012-09-28 | 2013-02-06 | 京东方科技集团股份有限公司 | Sidelight type backlight module and liquid crystal display device |
Non-Patent Citations (1)
| Title |
|---|
| 白光干涉型EFPI光纤应变传感器理论模型的研究;江绍基 等;《传感技术学报》;20050326(第01期);全文 * |
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