CN108886076A - Broadband mirrors - Google Patents
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- CN108886076A CN108886076A CN201780023785.6A CN201780023785A CN108886076A CN 108886076 A CN108886076 A CN 108886076A CN 201780023785 A CN201780023785 A CN 201780023785A CN 108886076 A CN108886076 A CN 108886076A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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Abstract
The present invention describes a kind of broadband mirrors（1）, including：Outer surface layer（10）；Be arranged in outer surface layer（10）The dielectric layer stack of lower section（11A,11B,12）；It is characterized in that, the dielectric layer stack（11A,11B,12）It is included in dielectric layer stack（11A,11B,12）Adjacent dielectric layers（11A,12）Between interface at least one patterned surface（110,120）.Invention further describes a kind of light emitting diodes（1）.Invention further describes a kind of manufacture broadband mirrors（1）Method, this method includes the following steps：Outer surface layer is provided（10）And in outer surface layer（10）Apply multiple dielectric layers in lower section（11A,11B,12）To construct dielectric layer stack（11A,11B,12）, it is characterised in that the following steps：By subsequent dielectric layer（11B,12）It is applied to patterned surface（110,120）Before, at least one dielectric layer is patterned（11A,12）Surface.
Description
Technical field
The present invention describes broadband mirrors, light emitting diode and the method for manufacturing broadband mirrors.
Background technique
Broadband mirrors are used to maximize the efficiency of optical system and keep color integrity.For example, increase light engine and
The reflectivity of reflecting mirror used in projector is directly related with the improvement of brightness or increase.Distributed Bragg reflector
（DBR）It is a kind of semiconductor mirror, the material including multilayer accurate deposition.However, the shortcomings that DBR is its wavelength dependency,
Because specific DBR may only reflect the light in certain wavelength band.Light outside this band will not be by multilayer laminated reflection.In addition, DBR
Reflectivity responses can depend on the incident angle of light.Therefore, DBR may only have in limited wave-length coverage and incident angle
Effect ground reflected light.
As the substitution of DBR, the metallic mirror of the prior art can be arranged as to reflection backing, it is as more as possible to ensure
Light tube core is left by light emitting surface.Reflection backing is usually the on opposite sides parallel flat of compound tube core with light-emitting area
Face.Reflection backing can also be efficiently used for the back for making heat pass through device and inject a current into pn-junction（Metal-semiconductor
Contact）.Backing is reflected usually by some suitable metals（Such as silver, aluminium or gold）It is made.However, it is not possible to realize 100%
Reflectivity, and therefore metallic reflection back sheet will absorb and reach the light of its some percentages rather than by the light of the percentage
Back to the surface of emission of tube core.Reflective metal layer has another disadvantage that its temperature dependency, because carefully must ensure device
Reliable operation of the part in safe temperature range.However, the high temperature occurred at the p-n diode junction in this compound tube core can
The problem of capable of causing metallic reflection backing.However, being the metal of the good optical reflector of LED when LED is operated at high temperature
It may cause integrity problem.For this reason, the LED of some prior arts has been configured to using the metal less reflected
As reflection backing, and attempts the undesirable metal of compensatory reflex and be incorporated to additional dielectric layer.Nonetheless, this compound
The net reflection coefficient of tube core may not be enough for some applications.
Therefore, the purpose of the present invention is to provide the improved reflecting mirrors for overcoming the above problem.
Summary of the invention
The purpose of the present invention is by broadband mirrors according to claim 1, pass through the light-emitting diodes of claim 10
It pipe and is realized by the method for the claim 11 for manufacturing broadband mirrors.
According to the present invention, broadband mirrors include outer surface layer and apply the dielectric layer stack-below outer surface layer
Low-index layer and high index layer are alternately arranged, which is characterized in that dielectric layer stack include at least one patterned surface and
At least one non-patterned surface, wherein patterned surface is formed in high index layer in high index layer and the first adjacent low-index layer
Between interface side on, and non-patterned surface is formed in high index layer in the adjacent low index of high index layer and second
On the other side of interface between layer.In the context of the present invention, dielectric layer is understood to the system in semiconductor element
The plane layer of translucent dielectric substance used in making.Dielectric layer stack is referred to as planar layers or plural layers
Lamination.
The advantages of broadband mirrors of the invention, is to realize by integrating roughened dielectric layer in layer laminate
Reflectivity significantly improves.Depending on the construction of broadband mirrors of the invention, that is, the number of plies, used material etc. are depended on, it can
To observe the improvement of reflectivity in wide incident angle range and wide wave-length coverage.Broadband mirrors of the invention pass through
The reflection of generation incident light is effectively increased comprising being roughened or patterning interface between two dielectric layers of different refractivity.
Another advantage of broadband mirrors of the invention is that patterning interface causes the scattering in luminescent layer.This is beneficial effect
Fruit, because scattering is conducive to light from device output coupling.
According to the present invention, light emitting diode is compound tube core and including this broadband mirrors.Of the invention luminous two
Pole pipe is characterized in that advantageously high light output, because the essentially all light generated at the p-n junction of diode can be
Light-emitting area leaves diode.This is advantageously compared with comparable prior art LED die, for the comparable prior art
For LED die, the signal portion of light is absorbed by reflective metal layer.
According to the present invention, the method for manufacturing broadband mirrors includes the following steps：Outer light exiting surface layer is provided and application is low
Index layer and high index layer are alternately arranged, to construct dielectric layer stack below outer surface layer, it is characterised in that following step
Suddenly：Pattern the surface of at least one dielectric layer, in high index layer between high index layer and the first adjacent low-index layer
Interface side on realize at least one patterned surface, and in high index layer in the adjacent low finger of high index layer and second
At least one non-patterned surface is realized on the other side of interface between several layers.
It is an advantage of the method for the invention that needing relatively little of effort to realize that the broadband with advantageous property characteristic is anti-
Penetrate mirror.Known routine techniques can be used for using dielectric layer and patterned step from semiconductors manufacture.It therefore, can be with
The device for being configured to broadband mirrors incorporated herein is realized with small fringe cost.
Dependent claims and following description disclose particularly advantageous embodiment of the invention and feature.It can be appropriate
The feature of ground combination embodiment.The feature described in the context of a claim categories can be equally applicable to another
A claim categories.
Hereinafter, statement " low-index material " and " low index " may be used interchangeably.Therefore, " low-index layer " will manage
Solution is the layer for including low-index material.Similarly, statement " high-index material " and " high index " may be used interchangeably.Term
" layer " and " dielectric layer " is synonymous.
Preferably, outer surface layer-its will be the high index layer of the light-emitting area-including suitable material of broadband mirrors.Example
Such as, in order to realize that blue/green LED, outer surface layer preferably include gallium nitride（GaN）Layer.
In order to construct broadband mirrors of the invention, can on the upper layer that will subsequently act as the surface of emission of broadband mirrors or
Continuous dielectric layer is applied below outer layer.Preferably, dielectric layer has thickness in the range of 500nm to 2 μm.It can be with
Pantostrat is applied using any suitable technology, such as passes through vapor deposition.Preferably, the dielectric layer of planar layers with
Low-index layer and high index layer are alternately arranged building.Suitable material for high index layer can be silicon nitride（Si3N4）, and
Suitable material for low-index layer can be silica（SiO2）.Preferably, any high index layer is arranged with sandwich like way
Between low-index layer.
Such as technical staff will be apparent that, different materials can be selected for each layer choosing, because in broadband mirrors
The color of the light of outer surface transmitting will depend on used layer material in big degree and how they adulterate.
The present invention is based on following opinions：The patterning or roughened dielectric layer being incorporated in planar layers can be shown
Write the reflection coefficient for improving planar layers.The increase of reflection coefficient can pass through the combination of the effect controlled by Fresnel equation
It explains, that is, the increase and the corresponding of as caused by the interface between high index layer and low-index layer transmission reflected are reduced, by
The increase etc. of internal reflection caused by the roughened surface of dielectric layer.
Surprisingly, it has been observed that the reflection coefficient of planar layers passes through in the dielectric with different refractivity
Layer between patterning interface and dramatically increase.Therefore, a preferred embodiment of method of the invention includes by least one
Low-index layer is applied to outer surface layer, by high index layer（Such as silicon nitride layer）It is applied to the low-index layer, patterning high index
Layer is to be roughened by lower surface and be applied to another low-index layer the roughened surface of high index layer.In this way, having
Have and forms patterning interface between two dielectric layers of different refractivity.Pass through the low finger by reflective metal layer application to the end
It several layers, can be in this stage stop layer depositing operation." roughening interface " in planar layers is for reducing broadband mirrors
Reflection coefficient and increase its reflectivity because it effectively returns up the photon of major part in the side of light-emitting area, and
And it is only oriented towards reflection photon of the backing by smaller portions, which shines the most of directions for transferring these photons
Surface returns.
In a preferred embodiment of the invention, above-mentioned layer deposition process at least repeats once, with realize tool there are two or
The layer laminate at more this " roughening interfaces ".The combined effect of several this " roughenings interface " is that dramatically increase broadband anti-
Penetrate the overall reflective coefficient of mirror.Each " roughening interface " contributes to the increase of the reflectivity of broadband mirrors.
The roughened surface of dielectric layer can be formed in any suitable manner.Such as, it is possible to implement optical electro-chemistry
（PEC）One of technologies such as etching, micro Process, photoetching, nano-imprint lithography or it is a variety of with realize desired surface texture or
Topology.For example, selected technology can be used for being formed random pattern or regular pattern on the dielectric layer previously deposited, it is all
Such as ripple or ridge-like structure.Pattern and pattern density be can choose between patterned dielectric layer and subsequent dielectric layer
Interface realize desired reflection coefficient.For example, pattern characteristics preferably have the size in 100nm-2 μ m.
The advantageously high reflectance of broadband mirrors of the invention can be only with three dielectric layers（That is low-index layer, tool
There is the high index layer of patterned surface and is arranged in light-emitting area and reflects another low-index layer between backing）To realize.It is logical
The quantity for increasing patterned layer interface is crossed, the reflectivity of broadband mirrors of the invention can be further improved.Preferably, it selects
It is arranged in the quantity at roughened low index/high index interface in the planar layers of broadband mirrors of the invention, to keep away
Exempt from or excludes using reflection back sheet.Therefore, in a preferred embodiment of the invention, broadband mirrors include up to five patterns
Change bed boundary, is distributed as described above with low-index layer and being alternately arranged for high index layer.This construction may be implemented very
Advantageous reflectivity, more than several percentages of reflectivity of known reflecting mirror.
Compared with DBR, DBR needs dozens of dielectric layer to realize desired reflectivity, broadband reflection of the invention
The dielectric layer stack of mirror preferably includes at most 15 dielectric layers, and most preferably up to three dielectric layers are comparable to realize
Reflectivity.In addition, the reflectivity of broadband mirrors of the invention independently of wavelength, is different from DBR, DBR be inherently wavelength according to
Bad.
According to the detailed description considered with reference to the accompanying drawing, the other objects and features of the invention be will be apparent.However,
It is appreciated that the purpose that attached drawing is merely to illustrate that and design, not as the restriction of limitation of the invention.
Detailed description of the invention
Fig. 1 shows the first embodiment of broadband mirrors according to the present invention；
Fig. 2 shows the second embodiments of broadband mirrors according to the present invention；
Fig. 3 shows the 3rd embodiment of broadband mirrors according to the present invention；
Fig. 4 shows patterned dielectric arrangement；
Fig. 5 shows patterned dielectric arrangement；
Fig. 6 shows the curve graph of the reflectivity of the patterned dielectric arrangement of Fig. 4 and Fig. 5；
Fig. 7 shows the curve graph of normalization radiation intensity；
Fig. 8 shows the embodiment of prior art mirror；
Fig. 9 shows another embodiment of prior art mirror.
In the accompanying drawings, identical label refers to identical object always.Object in figure is not drawn necessarily to scale.
Specific embodiment
Fig. 1 shows the first embodiment of broadband mirrors 1 according to the present invention（It is compound herein in figure and following figure
Tube core is multilayer laminated to be exemplified with the ratio exaggerated；The height of compound tube core is usually in the range of 5 μm to 15 μm）.In this example
Property embodiment in, broadband mirrors 1 are configured to compound tube core comprising four plane layers 10,11A, 12,11B and reflection back
The lamination of lining 13.The layer 11A of suitable material, 12,11B are deposited one by one, and last layer 11B is by reflection backing 13
It terminates.Plane layer 11A, 12,11B can in the usual manner, by vapor deposition or any other suitable technology, from most upper
Layer 10 starts simultaneously " downward " work, constructs using the first low-index layer 11A, high index layer 12 and the second low-index layer 11B.Make
With method of the invention, high index layer 12 is applied to the non-patterned surface N of the first adjacent low-index layer 11A.Under deposition
Before one or the second low-index layer 11B, the surface of high index layer 12 is roughened.For the sake of simplicity, pattern 120 will be roughened
It is designated as tortuous line.Pattern dimension can be in several nanometers to several microns of region.Pattern dimension and layer property can be phase
Mutual correlation, such as suitable pattern dimension can be depending on the thickness of high index layer 12 and the refractive index of high index layer 12
With the refractive index of adjacent low-index layer 11B.
The outer surface 100 of top layer 10 is light emitting surface 100.In order to be used as blue or green LED, outermost layer 10 includes all
Such as gallium nitride（GaN）High index material, and low-index layer 11A, 11B include such as（SiO2）Low index material.With logical
Normal mode provides electrical contact（It is not shown）.Light is generated at p-n junction between outermost layer 10 and adjoining course 11A.Due to photon
It initially advances in substantially all directions, therefore the purpose for reflecting backing 13 is that photon is redirected back to the side of the surface of emission 100
To.However, some parts for reaching the photon of reflection backing 13 will be absorbed since there is no perfect reflector material.This
The undesirable effect of kind is by the structures counter of broadband mirrors 1 of the invention, because having figure in low index/high index boundary
The presence of case or the high index layer of roughened surface 120 12, by substantially being captured in high index patterned layer 12
Photon and they are sent back on the direction of light emitting surface 100 rather than allow they reflection backing 13 direction uplink
Into to influence the track of photon.Effectively, less photon will be successfully arrived at reflection backing 13, also, accordingly lesser
Part will be lost due to the absorption of reflection backing.In this way, high index patterned layer 12（With its roughened surface
120）Increase the light output L of broadband mirrors 1 of the invention.
Fig. 2 shows the second embodiments of broadband mirrors 1 according to the present invention.Here, broadband mirrors 1 are also constructed
For four plane layers 10,11A, 12,11B and the lamination for reflecting backing 13.In this embodiment, deposition high index layer 12 it
Before, the surface of the first low-index layer 11A is patterned or roughened.Second low-index layer 11B is applied to high index layer 12
Non-patterned surface N.The patterned surface 110 of first high index layer 12A is combined with low index/high index boundary, is also used for
Prevent photon in the side of reflection backing 13 upwardly through and as described above effectively resetting them towards light emitting surface 100
To.
Fig. 3 shows the 3rd embodiment of broadband mirrors 1 according to the present invention.In this embodiment, broadband mirrors 1
It is configured to the lamination of eight plane layers 10,11A, 12,11B.Three high index layers 12 are clipped between low-index layer 11A, 11B.
Each high index layer 12 is applied to the non-patterned surface N of previous low-index layer 11A, 11B.Continue low-index layer after deposit
Before 11A, 11B, the surface of each high index layer 12 is roughened.Due to each high index layer 12（With its roughened surface
120）It effectively " has been sent back " on the direction of light emitting surface 100 more than the photon that it " allows to pass through " in the opposite direction
Photon, therefore be that little or no photon reaches reflecting mirror 1 most using the final result of several such high index layers 12
Under face 101.Therefore, there is no need to, which will reflect backing, is applied to this back side 101.In the presence of with do not need reflection backing it is associated excellent
Point, i.e. saving cost and temperature independence.As explained in the introduction, satisfactory reflective metals backing is expensive
, and also to high temperature sensitive.
Fig. 4-6 illustrates the principle of the present invention.In side patterned sapphire chip, total reflection system can be observed
Several increases.In experiment the present invention is concerned, patterned sapphire wafer 14 is arranged on absorber layers 15, absorber
Layer 15 includes the material having in visible-range close to zero reflectivity.Suitable material can be the black paper layer of flocking dumb light.
Sapphire Substrate has high refractive index, and air has low-refraction.The known law of refraction is suitable for air/wafer boundary
（In every side of chip）.Due to high index/low index interface and pattern geometries, patterned surface 140 will be used in crystalline substance
Scattered photon in piece.By scattered photon, the incidence of the total internal reflection in chip increases.In order to measure patterned wafers 14
Reflectivity, by incident light LiIt is directed through chip 14 and measures institute reflected light LrAmount.To having towards absorber 15 in Fig. 4
The arrangement of patterned surface 140 tested, and to the patterned surface 140 having away from absorber 15 in Fig. 5
Arrangement is tested.Show observing in Fig. 6 as a result, Fig. 6 shows first reflectance curve Figure 40 of the arrangement of Fig. 4,
With second reflectance curve Figure 50 of the arrangement of Fig. 5.Observation is from 400nm to 750nm（X-axis）Wave-length coverage in carry out
's.In the case where patterned surface 140 is towards absorber 15, patterned Sapphire Substrate 14 table in entire wave-length coverage
Reveal be more than 50% reflectivity, that is, regardless of wavelength, approximately half of light is reflected back toward by chip 14.It is patterning
Backwards in the case where absorber 14, patterned Sapphire Substrate 14 shows about 15% reflectivity, i.e., about 85% on surface 140
Light pass through chip 14.In each case, chip 14 is used to prevent institute's reflection percentage of photon from reaching back absorber.
Since the refractive index of silicon nitride is higher than sapphire refractive index, and the refractive index of silica is higher than air but is lower than
Silicon nitride and sapphire, so the result observed can be transferred in dielectric mirror of the invention.The effect observed exists
It is advantageously used in broadband mirrors of the invention described in above figure 1：High index layer 12 patterned surface towards anti-
In the case where penetrating backing 13, about 50% or the light of half will be reflected back towards light emitting surface 100.The other half passes through high index
Layer 12 reaches reflection backing 13, experience reflection, and the major part of this light, i.e., about 85%, passes through high index layer 12 and arrives
Up to light emitting surface 100.High index layer 12 is combined with high index/low index boundary patterned surface, significantly increases width
Net reflection coefficient with reflecting mirror 1（Encapsulate reflectivity）.Therefore the effect observed can be used for range independently of wavelength
In being widely applied, such as the light output of the LED for improving any color.
Fig. 7 is shown relative to incident angle θ（X-axis）Normalization radiation intensity（Y-axis）Various curve graphs.With reference to song
Line chart R indicates the angle distribution of incident radiation.Other two curve graph P8、P9It illustrates existing as shown in respectively in figs. 8 and 9
The performance of technology dielectric mirror 8,9.The dielectric mirror 8 of the prior art includes being backed with the GaN layer of reflection backing 13
10, and its curve graph P8The consistent difference with reference curve R's is shown in entire angular region.The prior art dielectric of Fig. 9
Reflecting mirror 9 includes the low index SiO between GaN layer 10 and reflection backing 132Layer 91, and its curve graph P9Show be more than by
GaN and SiO2Different refractivity determine critical angle（Total internal reflection angle）Reflectivity increase.More than the angle,
Reflectance curve P9Substantially it is overlapped with curve R.Curve P1It is the reflectivity of broadband mirrors of the invention as shown in Figure 1,
And curve P2It is the reflectivity of the broadband mirrors of the invention of the embodiment of Fig. 2.These curves P1、P2Illustrate 45 ° of areas nearby
Domain（That is maximum incident radiation region）Significantly improve.Therefore, the prior art mirror of embodiment ratio Fig. 8 of Fig. 1 and Fig. 2 exists
Multiple reflection about 11.5% in entire visible spectrum, and the prior art mirror multiple reflection about 2% than Fig. 9.
Although disclosing the present invention in the form of preferred embodiment and its modification, it will be understood that, do not departing from this
In the case where invention scope, many additional modifications and variations can be carried out to it.For example, anti-instead of using broadband of the invention
It penetrates mirror and is used as " bottom reflecting mirror ", it can be implemented as side rearview mirror.The example of this application may be coating wafer-level package pipe
The sapphire wall of core.
For the sake of clarity, it is understood that be not excluded for through " one " used herein or one multiple, and " comprising " is not
Exclude other steps or element.
Appended drawing reference：
Broadband reflector 1
Outer layer 10
Light emission surface 100
Back surface 101
Low-index layer 11A, 11B
Patterned surface 110
High index layer 12
Patterned surface 120
Reflector 13
Patterned sapphire substrate 14
Patterned surface 140
Absorber 15
Reflectance curve Figure 40,50
Prior art reflector 8,9
Light emitted L
Incident light Li
Institute reflected light Lr
Radiation intensity R
Radiation intensity P8、P9
Radiation intensity P1、P2
Claims (15)
1. a kind of broadband mirrors（1）, including
Outer surface layer（10）；With
Dielectric layer stack（11A,11B,12）, it is arranged in the outer surface layer（10）Lower section, and including low-index layer
（11A,11B）And high index layer（12）Be alternately arranged；
It is characterized in that, the dielectric layer stack（11A,11B,12）Including at least one patterned surface（110,120）With
At least one non-patterned surface（N）, the patterned surface（110,120）It is formed in high index layer（12）In the high index
Layer（12）The adjacent low-index layer with first（11A,11B）Between interface side on；And the non-patterned surface（N）
It is formed in the high index layer（12）In the high index layer（12）The adjacent low-index layer with second（11A,11B）Between interface
On the other side at place.
2. broadband mirrors according to claim 1, wherein the patterned surface（120）It is formed in including having height
The dielectric layer of the material of refractive index（12）On.
3. according to claim 1 or broadband mirrors as claimed in claim 2, wherein the dielectric layer stack（11A,11B,
12）By reflection backing（13）It terminates.
4. broadband mirrors according to any one of the preceding claims, wherein the layer of high-index material（12）Arrangement
In the layer of low-index material（11A,11B）Between.
5. broadband mirrors according to any one of the preceding claims, wherein patterned surface（110,120）Including tool
There is the pattern of the characteristic size in 100nm to 2.0 μ ms.
6. broadband mirrors according to any one of the preceding claims, wherein dielectric layer（10,11A,11B,12）Tool
There is thickness in the range of 500nm to 2.0 μm of range.
7. broadband mirrors according to any one of the preceding claims, including at most 15 dielectric layers（10,11A,
11B,12）, more preferably up to 9 dielectric layers（10,11A,11B,12）, most preferably up to 3 dielectric layers（10,11A,
11B,12）.
8. broadband mirrors according to any one of the preceding claims, wherein the dielectric layer stack（11A,11B,
12）Including at least two patterned surfaces（110,120）.
9. broadband mirrors according to any one of the preceding claims, wherein the outer surface layer（10）It is rolled over including height
Penetrate the layer of rate material.
10. a kind of light emitting diode（1）, including broadband mirrors according to any one of claim 1 to 9（1）.
11. a kind of manufacture broadband mirrors（1）Method, the method includes the following steps：
Outer surface layer is provided（10）；
Apply low-index layer（11A,11B）And high index layer（12）Be alternately arranged, in the outer surface layer（10）Lower section
Construct dielectric layer stack（11A,11B,12）；
In high index layer（12）In the high index layer（12）The adjacent low-index layer with first（11A,11B）Between interface
Side on form at least one patterned surface（110,120）, and in the high index layer（12）In the high index layer
（12）The adjacent low-index layer with second（11A,11B）Between interface the other side on form at least one non-patterned surface
（N）.
12. according to the method for claim 11, wherein apply multiple dielectric layers（11A,11B,12）The step of include hand over
For using high refractive index material layer（12）And low refractive index material layer（11A,11B）.
13. according to claim 11 or claim 12 described in method, wherein the step of patterned layer surface includes photoelectrochemical
It learns（PEC）Any of etching step, micro Process step, lithography step, nanoimprint lithography step.
14. method described in any one of 1 to 13 according to claim 1, wherein the patterning step includes formation rule
Surface texture, in the patterned layer（11A,12）And succeeding layer（12,11B）Between boundary realize total internal reflection.
15. method described in any one of 1 to 14 according to claim 1, wherein pass through alternate application silicon dioxide layer
（11A,11B）And silicon nitride layer（12）To construct the dielectric layer stack.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP16165481.9 | 2016-04-15 | ||
| EP16165481 | 2016-04-15 | ||
| PCT/EP2017/058098 WO2017178299A1 (en) | 2016-04-15 | 2017-04-05 | Broadband mirror |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108886076A true CN108886076A (en) | 2018-11-23 |
| CN108886076B CN108886076B (en) | 2021-07-13 |
Family
ID=55806161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780023785.6A Active CN108886076B (en) | 2016-04-15 | 2017-04-05 | Broadband reflector |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11302848B2 (en) |
| EP (1) | EP3443598B1 (en) |
| JP (1) | JP6704065B2 (en) |
| KR (1) | KR101986982B1 (en) |
| CN (1) | CN108886076B (en) |
| WO (1) | WO2017178299A1 (en) |
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Also Published As
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| JP6704065B2 (en) | 2020-06-03 |
| KR20180124153A (en) | 2018-11-20 |
| JP2019514219A (en) | 2019-05-30 |
| US20190131498A1 (en) | 2019-05-02 |
| US11302848B2 (en) | 2022-04-12 |
| WO2017178299A1 (en) | 2017-10-19 |
| KR101986982B1 (en) | 2019-06-10 |
| EP3443598B1 (en) | 2019-08-14 |
| CN108886076B (en) | 2021-07-13 |
| EP3443598A1 (en) | 2019-02-20 |
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