CN108878583A - Based on p-Si/NiO:The preparation method of the photodetection material of Zn heterojunction structure - Google Patents
Based on p-Si/NiO:The preparation method of the photodetection material of Zn heterojunction structure Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000002243 precursor Substances 0.000 claims abstract description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 32
- 239000011701 zinc Substances 0.000 claims description 29
- 238000004528 spin coating Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 14
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000908 ammonium hydroxide Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 238000013019 agitation Methods 0.000 claims description 6
- 229940031098 ethanolamine Drugs 0.000 claims description 6
- 230000036571 hydration Effects 0.000 claims description 6
- 238000006703 hydration reaction Methods 0.000 claims description 6
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical class [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 claims description 6
- 238000002604 ultrasonography Methods 0.000 claims description 6
- BEAZKUGSCHFXIQ-UHFFFAOYSA-L zinc;diacetate;dihydrate Chemical compound O.O.[Zn+2].CC([O-])=O.CC([O-])=O BEAZKUGSCHFXIQ-UHFFFAOYSA-L 0.000 claims description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 230000032683 aging Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000003599 detergent Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 239000005416 organic matter Substances 0.000 claims 1
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 37
- 239000010408 film Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229940078494 nickel acetate Drugs 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- OLGONLPBKFPQNS-UHFFFAOYSA-M sodium 2-(4-phenylphenyl)butanoate Chemical compound [Na+].CCC(C([O-])=O)c1ccc(cc1)-c1ccccc1 OLGONLPBKFPQNS-UHFFFAOYSA-M 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses one kind to be based on p-Si/NiO：The preparation method of the photodetection material of Zn heterojunction structure, which is characterized in that successively include preparing NiO precursor sol, the NiO film of preparation doping Zn ion, preparation p-Si/NiO：Zn heterojunction electrode and etc..The present invention is compensated carrier concentration in NiO film by doping, to be conducive to increase the service life of photo-generated carrier, the on-off ratio with higher of the photodetector because prepared by and higher quantum efficiency, shows good photodetection performance；Preparation method of the present invention is simple, environmentally protective, at low cost, is suitble to industrialization large-scale production.
Description
Technical field
The present invention relates to one kind to be based on p-Si/NiO:The high-performance optical electrical resistivity survey of Zn heterojunction structure is measured and monitored the growth of standing timber the preparation method of material,
Belong to photodetection Material Field.
Background technique
With electronic equipment for consumption, smart grid, high-speed rail transportation and guided missile, satellite, electronic warfare system etc.
Fast development, to high-performance optical electrical resistivity survey measure and monitor the growth of standing timber material have greatly expect and demand.Semiconductor material with wide forbidden band has because of it
Dielectric constant is small, electronics saturation drift velocity is big, forbidden bandwidth is big and thus the various extreme natures of bring and be concerned.
Metal oxide such as ZnO, TiO2、Ga2O3, NiO and WO3Deng, because have wider forbidden bandwidth, excellent chemical stability and
Advantages of environment protection and be considered as a kind of semiconductor material with wide forbidden band with development potential.However there is excellent photo electric
The application of the metal oxide of energy is restricted by the various structures of material itself and performance, seriously limits its practical application.
If the similar other materials haveing excellent performance of lattice parameter can be embedded into control doping process by rationally designing
In semiconductor material with wide forbidden band, and the original photodetection performance of semiconductor material with wide forbidden band is kept, for improving device quantum
Efficiency and can have very important significance to improve photodetection material property as needed.As Dai and Hsu et al. are mixed using Sb
Miscellaneous ZnO, and be successfully made have excellent photoelectric properties p-ZnO/n-ZnO it is similar knot (W.Dai, et.al, RSC Adv.,
2015,5,6311；C.L.Hsu, et.al, IEEE T.Electron Dev., 2014,61,1347)；Ji et al. be prepared for N and
In doping TiO2/Si heterojunction photovoltaic detect material, discovery doping after quantum efficiency visible light (565am) irradiation under by
400% (T.Ji, J.Mater.Chem.C, 2017,5,12848) is increased less than 95% when undoped.But by all
The internal structure that the device that such as hydro-thermal mode obtains may result in metal oxide changes, controllability and stability
Poor, from actual application, there are also a distances, and crucial preparation process is more complicated, is difficult to meet large-scale application.
Summary of the invention
The technical problem to be solved by the present invention is to：In the prior art the manufacture craft of photodetection material it is complex,
Long flow path, industrialized production are inconvenient, leakage current is larger and the defects such as quantum efficiency is low, so as to provide a kind of simple process,
Process is short, measures and monitor the growth of standing timber the preparation method of material suitable for the high-performance optical electrical resistivity survey of large-scale industrial production.
To solve the above-mentioned problems, the present invention provides one kind to be based on p-Si/NiO:The photodetection material of Zn heterojunction structure
The preparation method of material, which is characterized in that include the following steps：
Step 1)：Prepare NiO precursor sol：Four hydration nickel acetates and Zinc diacetate dihydrate are dissolved in ethylene glycol monomethyl ether
In, it heats and mixed solution is made after continuing heating bath and stirring in magnetic agitation, instillation ethanolamine solutions；Mixed solution is cooling
And it is still aging for 24 hours afterwards obtain NiO precursor sol；
Step 2)：The NiO film of preparation doping Zn ion：Doping is formed on the surface of substrate Si piece using the method for spin coating
NiO sol pellicle：First low speed spin coating, then high speed spin coating, then dry, repeated after substrate Si piece is cooled to room temperature spin coating and
Baking step 3~4 times, NiO precursor sol film is sintered together with substrate Si piece finally, obtains mixing in substrate surface
The nano NiO film of miscellaneous Zn ion；
Step 3)：Prepare p-Si/NiO:Zn heterojunction electrode：Using the template for having interdigital engraved structure, using magnetic control
Sputtering method prepares Ag electrode in NiO film surface；The p-Si piece for being coated with Ag electrode is put into tube furnace, be passed through containing hydrogen and
The mixed gas of argon gas, after annealing at a temperature of 350~400 DEG C, cooled to room temperature is finally obtained based on p-Si/NiO:
The photodetection material of Zn heterojunction structure.
Preferably, in the step 1) four hydration nickel acetates and Zinc diacetate dihydrate molar ratio be (98: 2)~(95:
5)；The molar ratio of ethanolamine solutions and four hydration nickel acetates is 1: 1.
Preferably, 60 DEG C are heated to before magnetic agitation in the step 1).
Preferably, the substrate Si piece in the step 2) must be through over cleaning before using：Make first with detergent preliminary clear
It washes, ultrasound dries up after 10~15 minutes；Then the organic of the mixed solution clean the surface of ammonium hydroxide, hydrogen peroxide and deionized water is used
Object, ultrasound dry up after 10~15 minutes, wherein ammonium hydroxide, hydrogen peroxide and deionized water volume ratio are 1: 1: 5；Finally with concentrated hydrochloric acid,
Hydrogen peroxide and the mixed solution of deionized water remove the metal ion on surface, and ultrasound dries up after 10~15 minutes, wherein dense salt
Acid, hydrogen peroxide and deionization volume ratio are 1: 1: 5.
It is highly preferred that in the mixed solution of the ammonium hydroxide, hydrogen peroxide and deionized water, ammonium hydroxide, hydrogen peroxide and deionized water
Volume ratio be 1: 1: 5；In the mixed solution of concentrated hydrochloric acid, hydrogen peroxide and deionized water, concentrated hydrochloric acid, hydrogen peroxide and deionized body
Product is than being 1: 1: 5 or 1: 2: 5.
Preferably, the revolving speed of low speed spin coating is 500~600 revs/min in the step 2), and spin-coating time is 10~15
Second；The revolving speed of high speed spin coating is 2000~3000 revs/min, and spin-coating time is 30~35 seconds；Drying is dried at 60~80 DEG C
20~30min；The temperature of sintering is 450~500 DEG C, and the time of sintering is 1.5~2h.
Preferably, the interdigital engraved structure in the step 3) in template is the square interdigital structure of 0.5 × 0.5cm；
The effective area of Ag electrode is 0.16cm2, Ag electrode with a thickness of 20~30nm.
Preferably, the percent by volume of the hydrogen in the mixed gas in the step 3) is 5%, the volume basis of argon gas
Than being 95%；Annealing time is 30 minutes.
The present invention is compensated carrier concentration in NiO film by doping.Compared with prior art, of the invention
Beneficial effect is：
1, carrier concentration is compensated in doping NiO nano thin-film produced by the present invention, while photoelectricity obtained is visited
Device on-off ratio with higher and higher quantum efficiency are surveyed, good photodetection performance is shown；
2, preparation method of the present invention is simple, environmentally protective, at low cost, is suitble to industrialization large-scale production.
Detailed description of the invention
Fig. 1 is that electrical resistivity survey made from embodiment 1 is measured and monitored the growth of standing timber the XRD diagram piece of material；
Fig. 2 is the SEM picture of photodetection material made from embodiment 1；
Fig. 3 is the switching characteristic data of photodetection material made from embodiment 1；
Fig. 4 is the XRD diagram piece of photodetection material made from embodiment 2；
Fig. 5 is the SEM picture of photodetection material made from embodiment 2；
Fig. 6 is the switching characteristic data of photodetection material made from embodiment 2.
Specific embodiment
In order to make the present invention more obvious and understandable, hereby with preferred embodiment, and attached drawing is cooperated to be described in detail below.
Embodiment 1
One kind being based on p-Si/NiO:The preparation method of the photodetection material of Zn heterojunction structure：
(1) it weighs raw material four and is hydrated nickel acetate (Ni (CH3COO)2·4H2O) 6.22g and Zinc diacetate dihydrate (Ni
(CH3COO)2·2H2O) 0.2287g is dissolved in 50mL ethylene glycol monomethyl ether, and instills ethanol amine after magnetic agitation 1h at 60 DEG C
1.22g (about 30 drop), is made NiO forerunner's lyosol；
(2) above-mentioned mixed solution is poured into glass beaker, stands and NiO forerunner's lyogel is made afterwards for 24 hours；
(3) spin-coating method is utilized, in substrate Si (SiO2) piece surface formed NiO sol pellicle：First low speed spin coating, revolving speed are
600 revs/min, spin-coating time is 10 seconds；Then high speed spin coating, revolving speed are 2000 revs/min, and spin-coating time is 30 seconds, finally
It is dried 30 minutes under the conditions of 60 DEG C, substrate repeats spin coating and baking step 3 times after being cooled to room temperature, finally by NiO presoma
Sol pellicle is together with substrate high temperature sintering, and sintering temperature is 500 DEG C, and sintering time 2h finally obtains N-type in substrate surface
NiO nano thin-film is based on p-Si/NiO:The photodetection material of Zn hetero-junctions.
Fig. 1 is the NiO XRD diagram for adulterating the Zn ion of low concentration, and all diffraction maximums are NiO's as seen from Figure 1
Diffraction maximum.Fig. 2 is that the NiO of the Zn ion of doping low concentration is spin-coated to the low power SEM figure after Si piece, whole as seen from Figure 2
A sample surfaces are more smooth.Fig. 3 is p-Si/NiO:The photodetector switching characteristic of Zn (low concentration doping) heterojunction structure
Figure, its photoelectric current reaches 40mA/cm under 600nm illumination as seen from Figure 32, -1V lower switch ratio reach 1500% with
On.
Embodiment 2
One kind being based on p-Si/NiO:The preparation method of the photodetection material of Zn heterojunction structure：
(1) it weighs raw material four and is hydrated nickel acetate (Ni (CH3COO)2·4H2O) 6.22g and Zinc diacetate dihydrate (Ni
(CH3COO)2·2H2O) 0.6098g is dissolved in 50mL ethylene glycol monomethyl ether, and instills ethanol amine after magnetic agitation 1h at 60 DEG C
1.22g (about 30 drop), is made NiO forerunner's lyosol；
(2) above-mentioned mixed solution is poured into glass beaker, stands and NiO forerunner's lyogel is made afterwards for 24 hours；
(3) spin-coating method is utilized, in substrate Si (SiO2) piece surface formed NiO sol pellicle：First low speed spin coating, revolving speed are
600 revs/min, spin-coating time is 10 seconds；Then high speed spin coating, revolving speed are 2000 revs/min, and spin-coating time is 30 seconds, finally
It is dried 30 minutes under the conditions of 60 DEG C, substrate repeats spin coating and baking step 3 times after being cooled to room temperature, finally by NiO presoma
For sol pellicle together with substrate high temperature sintering, sintering temperature is 500 DEG C, and sintering time is 2 hours, finally obtains N in substrate surface
Type NiO nano thin-film is based on p-Si/NiO:The photodetection material of Zn hetero-junctions.
Fig. 4 is the NiO XRD diagram for adulterating the Zn ion of higher concentration, and all diffraction maximums are NiO's as seen from Figure 4
Diffraction maximum.Fig. 5 is that the NiO of the Zn ion of doping higher concentration is spin-coated to the low power SEM figure after Si piece, whole as seen from Figure 5
A sample surfaces are more smooth.Fig. 6 is p-Si/NiO:The photodetector switching characteristic of Zn (higher concentration doping) heterojunction structure
Figure, its photoelectric current reaches 40mA/cm under 600nm illumination as seen from Figure 62, -1V lower switch ratio reach 1100% with
On.
Claims (8)
1. the preparation method of photodetection material of the one kind based on p-Si/NiO: Zn heterojunction structure, which is characterized in that including following
Step：
Step 1)：Prepare NiO precursor sol：Four hydration nickel acetates and Zinc diacetate dihydrate are dissolved in ethylene glycol monomethyl ether,
It heats and mixed solution is made after continuing heating bath and stirring in magnetic agitation, instillation ethanolamine solutions；Mixed solution is cooling and quiet
It sets ageing and obtains NiO precursor sol afterwards for 24 hours；
Step 2)：The NiO film of preparation doping Zn ion：Doping is formed on the surface of substrate Si piece using the method for spin coating
NiO sol pellicle：First low speed spin coating, then high speed spin coating, then dry, spin coating and baking are repeated after substrate Si piece is cooled to room temperature
NiO precursor sol film, is finally sintered together with substrate Si piece, obtains the doping in substrate surface by dry step 3~4 time
The nano NiO film of Zn ion；
Step 3)：Prepare p-Si/NiO: Zn heterojunction electrode：Using the template for having interdigital engraved structure, using magnetron sputtering
Method prepares Ag electrode in NiO film surface；The p-Si piece for being coated with Ag electrode is put into tube furnace, is passed through containing hydrogen and argon gas
Mixed gas, at a temperature of 350~400 DEG C anneal after, cooled to room temperature finally obtains different based on p-Si/NiO: Zn
The photodetection material of matter structure.
2. the preparation method of the photodetection material based on p-Si/NiO: Zn heterojunction structure as described in claim 1, feature
It is, the molar ratio of four hydration nickel acetates and Zinc diacetate dihydrate is (98: 2)~(95: 5) in the step 1)；Ethanol amine is molten
The molar ratio of liquid and four hydration nickel acetates is 1: 1.
3. the preparation method of the photodetection material based on p-Si/NiO: Zn heterojunction structure as described in claim 1, feature
It is, is heated to 60 DEG C in the step 1) before magnetic agitation.
4. the preparation method of the photodetection material based on p-Si/NiO: Zn heterojunction structure as described in claim 1, feature
It is, the substrate Si piece in the step 2) must be through over cleaning before using：Make tentatively to clean first with detergent, ultrasound 10~
It is dried up after 15 minutes；Then the organic matter of the mixed solution clean the surface of ammonium hydroxide, hydrogen peroxide and deionized water, ultrasound 10~15 are used
It is dried up after minute, wherein ammonium hydroxide, hydrogen peroxide and deionized water volume ratio are 1: 1: 5；Finally with concentrated hydrochloric acid, hydrogen peroxide and go from
The mixed solution of sub- water removes the metal ion on surface, and ultrasound dries up after 10~15 minutes, wherein concentrated hydrochloric acid, hydrogen peroxide and goes
Ion volume ratio is 1: 1: 5.
5. the preparation method of the photodetection material based on p-Si/NiO: Zn heterojunction structure as claimed in claim 4, feature
It is, in the mixed solution of the ammonium hydroxide, hydrogen peroxide and deionized water, the volume ratio of ammonium hydroxide, hydrogen peroxide and deionized water is 1: 1
:5；In the mixed solution of concentrated hydrochloric acid, hydrogen peroxide and deionized water, concentrated hydrochloric acid, hydrogen peroxide and deionized volume ratio be 1: 1: 5 or
1∶2∶5。
6. the preparation method of the photodetection material based on p-Si/NiO: Zn heterojunction structure as described in claim 1, feature
It is, the revolving speed of low speed spin coating is 500~600 revs/min in the step 2), and spin-coating time is 10~15 seconds；High speed spin coating
Revolving speed be 2000~3000 revs/min, spin-coating time be 30~35 seconds；Drying is 20~30min of baking at 60~80 DEG C；It burns
The temperature of knot is 450~500 DEG C, and the time of sintering is 1.5~2h.
7. the preparation method of the photodetection material based on p-Si/NiO: Zn heterojunction structure as described in claim 1, feature
It is, the interdigital engraved structure in the step 3) in template is the square interdigital structure of 0.5 × 0.5cm；Ag electrode has
Effect area is 0.16cm2, Ag electrode with a thickness of 20~30nm.
8. the preparation method of the photodetection material based on p-Si/NiO: Zn heterojunction structure as described in claim 1, feature
It is, the percent by volume of the hydrogen in mixed gas in the step 3) is 5%, and the percent by volume of argon gas is 95%；
Annealing time is 30 minutes.
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| JP4568197B2 (en) * | 2005-09-15 | 2010-10-27 | 三洋電機株式会社 | Oxide semiconductor device |
| CN108063186A (en) * | 2017-11-20 | 2018-05-22 | 济南大学 | Zinc doping nickel oxide hole transmission layer inverts perovskite solar cell and preparation method |
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| JP4568197B2 (en) * | 2005-09-15 | 2010-10-27 | 三洋電機株式会社 | Oxide semiconductor device |
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| CN114512569A (en) * | 2021-11-25 | 2022-05-17 | 北京师范大学 | Gradient doped wide-spectrum self-powered photoelectric detector |
| CN114512569B (en) * | 2021-11-25 | 2023-06-02 | 北京师范大学 | Gradient doped broad spectrum self-powered photoelectric detector |
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