CN108857859A - The polishing control method and polishing system of chip - Google Patents
The polishing control method and polishing system of chip Download PDFInfo
- Publication number
- CN108857859A CN108857859A CN201710446753.9A CN201710446753A CN108857859A CN 108857859 A CN108857859 A CN 108857859A CN 201710446753 A CN201710446753 A CN 201710446753A CN 108857859 A CN108857859 A CN 108857859A
- Authority
- CN
- China
- Prior art keywords
- interference signals
- optical interference
- polishing
- light
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 339
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000003287 optical effect Effects 0.000 claims abstract description 259
- 238000007517 polishing process Methods 0.000 claims description 64
- 238000005286 illumination Methods 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 9
- 239000000284 extract Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 7
- 230000008676 import Effects 0.000 claims description 4
- 238000009790 rate-determining step (RDS) Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000001105 regulatory effect Effects 0.000 description 12
- 239000002002 slurry Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000008447 perception Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000019643 circumnutation Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000029052 metamorphosis Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001002 morphogenetic effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
- B24B49/165—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load for grinding tyres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to the polishing control methods and polishing system of chip, provide a kind of be able to carry out and control so that in the polishing control method for polishing the chip that end time point keeps the thickness distribution of wafer polishing layer uniform and using its polishing system, this method includes：Polishing step is polished for the polishing layer of chip；Light irradiation step, the 1st position and the 2nd position irradiation light to the polishing layer of the chip；Light-receiving step receives the 1st reflected light of the 1st position of the chip and the 2nd reflected light of the 2nd position；Pressure adjustment step is adjusted the pressure of the chip, by region (zone) to eliminate the deviation of the 1st optical interference signals from the 1st reflected light and the 2nd optical interference signals from the 2nd reflected light.
Description
Technical field
The present invention relates to the polishing control method of the chip by means of the phase difference detection using multi-wavelength light and utilize it
Polishing system, specifically, be related to one kind in polishing process, even if not exclusively calculate polishing layer thickness, by means of benefit
With the phase-difference control of multi-wavelength light, the polishing control method and utilization of the thickness of polishing layer just can be real-time and accurately adjusted
Its system.
Background technique
Chemo-mechanical polishing (CMP) device is, in order to eliminate due to executing repeatedly in semiconductor element manufacturing process
Masking, etching and cabling processes etc. and the wafer surface that generates it is concave-convex caused by occur between the region cell and peripheral circuit area it is high
The global planarization of difference is spent, is improved because of circuit formation wafer surface caused by contact/wiring UF membrane and highly integrated element
Roughness etc., and it is used to carry out wafer surface the device of precise polished processing.
In this CMP device, carrier head is before and after polishing process, with the burnishing surface of chip and the opposite state of polishing pad
It pressurizes to the chip, allows to carry out polishing process, meanwhile, after polishing process, with direct or indirect vacuum suction and handle
The state for holding chip is transplanted on next process.
Fig. 1 a is the skeleton diagram of chemo-mechanical polishing device 1.As shown in Figure 1, chemo-mechanical polishing device 1 be into
On the polishing pad 11 of the polishing plate 10 of row rotation 11d, wafer W is polished first 20 and pressurizes and realize polishing, meanwhile, it is supplied from slurry
Portion's (not shown) supplies slurry on polishing pad 11 and realizes that wet type polishes.Moreover, in the process, adjuster 40 into
Row rotation 40d movement and while circumnutation, adjustment disk keeps 11 surface of polishing pad modified, by the fine slot of polishing pad 11,
Slurry is supplied to wafer W.
On the other hand, integrated with semiconductor element, the polishing layer thickness of wafer W needs fine to be polished.
For this purpose, to be detected as follows shown in the previous content as disclosed in Republic of Korea's granted patent bulletin the 10-542474th
Polishing layer thickness, that is, in the process (S10) for carrying out polishing process, from illumination region to the burnishing surface irradiation light (S20) of chip,
Light receiver receives the reflected light (S30) reflected from polishing layer, tracks the optical interference signals of received reflected light, grasps indirectly
The thickness change (S40) of polishing layer.In fig 1 a, all label is " 50 " for illumination region and light receiver, both can be with
It is configured at the through hole of perforation polishing pad and polishing plate, can also be configured on polishing plate.
But in the thickness for the photopermeability polishing layer (for example, oxide skin(coating)) for being deposited on wafer W by means of CVD process etc.
Degree be common thickness (for example,Left and right) in the case where, by means of the interference light of examination burnishing surface reflection
Number or variation tendency can grasp polishing end time point, but in the oxide skin(coating) for being deposited on wafer W with a thickness of improper
Blocked up thickness (for example, ) in the case where, according to as upper type grasp polishing layer thickness if very
Difficulty, there is also difficult problems for accurate detection polishing end time point.
More specifically, the interference light reflected from the oxide skin(coating) of wafer W is as shown in Fig. 1 b and Fig. 1 c, with by each wavelength
The metamorphosis moved up and down, with the polishing of oxide skin(coating), the thickness of oxide skin(coating) is thinner, and the interval of the waveform of each wavelength is got over
Reduce.Moreover, the specific wavelength of spectrum is (for example, the wavelength of 500nm；λ 1) such as Fig. 1 d of the waveform relative to time shaft (sec)
It is shown.Therefore, be deposited on the oxide skin(coating) of wafer W with a thickness of usual thickness in the case where, for example, the 2nd upside peak
It is worth point A2, can confirms that the thickness of (compensation) oxide skin(coating) reaches target thickness (substantially in advance in advance), polishing can be terminated under the target thickness of oxide skin(coating).
But be deposited on the thickness of oxide skin(coating) of wafer W it is thicker than common thickness in the case where (substantially
), even if carrying out polishing to wafer W until reaching scheduled 2nd upside peak point A2, the thickness of the oxide skin(coating) of wafer W
As the state for being unable to reach target thickness.That is, in the case where the thickness of oxide skin(coating) is usually thicker, although needing to polish brilliant
Piece W is until reach upside peak point A3 of the time more than peak point A2 on the upside of pre-determined number, but whether reach with the peak value of interference wave
Detection polishing end time point is but in the presence of the initial oxidation nitride layer that can only include be deposited on wafer W based on to predetermined number of times
The limitation of the corresponding ground error of thickness deviation.
Furthermore, be different from content shown in Fig. 1 b and Fig. 1 c, it is previous the problem is that in addition to calculate reach for
The number of the interference light peak value (singular value, singular point) of one wavelength and calculate interference the photoperiod except, without energy
The method of the thickness of enough detection oxidation tunics.(previous, the unfavorable light with multiple wavelength, but utilizing has a wavelength
Laser beam, perceive the target thickness of oxide skin(coating), but in Fig. 1 b and Fig. 1 c diagram have multiple wavelength spectrum, not draw
With the previous situation using the light with multi-wavelength, but for illustrate that the oxide skin(coating) of the principle basic as the present invention is anti-
The characteristic for the light penetrated.)
Furthermore, it is deposited on the oxide skin(coating) of wafer W surface by means of CVD process etc., often forms to obtain edge
Thin and central thick, accordingly, there exist the problem of be that the interference waveform reflected from the thicker portion of central portion accurately detects polishing
End time point is extremely difficult.
In addition, being detected simultaneously by larger, lesser thickness according to the pattern of wafer face, thus it is difficult to grasp thickness, institute
With the problem is that, in polishing process, the thickness of real-time measurement wafer polishing layer and equably control chip polishing layer
Thickness is then more difficult.
In other words, in the polishing process of chip, even if the polishing layer thickness of chip deviates, in order to compensate for chip
The thickness deviation of polishing layer proposed the technology that opsition dependent adjusts the pressure of rubbing head in the past, but needed until accurate acquisition is brilliant
There is limitation in the time needed for piece polishing layer thickness, in terms of real-time control for the time needed for obtaining polishing layer thickness
Period, polishing layer have worn out, thus exist and adjust the limitation that polishing layer thickness deviation becomes difficult in real time.
In addition, the time needed for carrying out 1 polishing process to a chip is very short, substantially 30 seconds~60 seconds, throwing
In light process, the optical interference signals of oxide skin(coating) reflection only pass through 2~3 periods, thus in polishing process, for real-time
There is limitation in the rubbing head pressure control aspect for adjusting polishing layer thickness.
Summary of the invention
The technical issues of solution
The present invention is exactly to research and develop under aforementioned techniques background, it is therefore an objective in polishing process, even if not calculating polishing layer
Thickness, also the thickness of polishing layer can be accurately adjusted to desired distribution in polishing process.
It is also object of the invention to the uneven thickness one of the polishing layer deposited even with CVD in chip etc.,
Also, by uniform thickness distribution, wafer polishing layer can be polished in polishing process.
At the same time, the object of the present invention is in polishing process, using the deviation of optical interference signals, continuously, qualitatively
The thickness deviation of real-time perception polishing layer adjusts pressure to real-time continuous, so that wafer polishing layer becomes uniform.
Importantly, it is an object of the present invention in polishing process, every than in the past denser time interval,
Obtain the polishing layer thickness deviation information according to wafer position.
That is, it is an object of the present invention to using multi-wavelength light, wafer polishing layer different position reflect it is anti-
It penetrates in light, when the optical interference signals about a certain wavelength reach set value (for example, peak value) on time (sec) axis, perception
Phase difference between the optical interference signals determined by reflection position perceives in the state of passing through some time from this about difference
Phase difference between the optical interference signals of wavelength, by means of this, by the phase difference of the optical interference signals in each position, every very
Dense time interval perceives the polishing layer thickness of different position, and in fact the continuous polishing layer thickness of perception in real time has
Zero deflection.
As a result, it is an object of the present invention to can be unrelated with the initial stage thickness deviation of wafer polishing layer, in polishing process
In, the pressure of the continuous each position for adjusting chip in real time keeps wafer polishing thickness degree reliable and certain in polishing end time point
Embody the whole uniform polishing layer thickness profile of distribution in ground.
Technical solution
In order to reach the purpose, one aspect of the present invention provides a kind of chemo-mechanical polishing system of chip, the crystalline substance
Piece is formed with the polishing layer of photopermeability material in bottom surface, which is characterized in that including：Polishing pad rotates on polishing plate；Light
Irradiation portion, to the polishing layer irradiation light of the chip；Light receiver is received the mutually different 1st of the polishing layer
1st optical interference signals of position reflection and the 2nd optical interference signals reflected in the 2nd position；Rubbing head is adjusted to the chip
The pressure of application, to eliminate the deviation of the 1st optical interference signals and the 2nd optical interference signals.
Moreover, providing a kind of chemo-mechanical polishing control method, which is characterized in that including：Polishing step utilizes chip
Polishing system, polished for the polishing layer of the chip；Light irradiation step, to the polishing layer of the chip
The 1st position and the 2nd position irradiation light；Light-receiving step receives the 1st reflected light and the institute of the 1st position of the chip
State the 2nd reflected light of the 2nd position；Pressure adjustment step adjusts the pressure that applies to the chip, to eliminate from described the
1st optical interference signals of 1 reflected light and the deviation of the 2nd optical interference signals from the 2nd reflected light.
More specifically, from illumination part irradiate light, the polishing layer of photopermeability material surface reflection it is anti-
Penetrate light and across polishing layer and be not through layer surface reflection reflected light mutually carry out the interference of light, and with time going by and
The optical interference signals for exporting sinuous pattern, reflect the thickness information of polishing layer in optical interference signals.
Therefore, 1st optical interference signals and 2nd of the present invention to mutually different 1st position of polishing layer thickness to be adjusted
2nd optical interference signals of position compare, although can not know the throwing of the 1st position and the 2nd position with accurate numeric form
Photosphere thickness, but can accurately know which is bigger in the polishing layer thickness of the 1st position and the polishing layer thickness of the 2nd position.
As a result, in the case where equably to adjust wafer polishing thickness degree on the whole, in the 1st position and the 2nd position
The bigger position of polishing layer thickness apply higher pressure by means of the pressure chamber of rubbing head, or be directed to and polishing layer thickness
Bigger position polishes pad area accordingly, further turns down the pressure of adjuster, can be in the polishing end time by means of this
Point becomes and equably completes the state that polishing layer thickness is adjusted.It is similar, it is adjusted by the polishing layer thickness profile of chip
In the case where the thickness of the 1st position must be made bigger than the 2nd position, it is also possible by means make the 1st optical interference signals of the 1st position with
2nd optical interference signals of the 2nd position are compared to be adjusted as signal corresponding with thicker thickness.
On the other hand, the deviation can be the luminous intensity (intensity) in the optical interference signals at the 1st set moment
Deviation.That is, the of 1st optical interference signals of the comparison in the 1st position at the 1st set moment and the 2nd position at the 1st moment
2 optical interference signals adjust the pressure of chip to the direction for mitigating the two deviation, by means of this, can polish end time point,
Equably adjust the polishing layer thickness of chip.
Wherein, the deviation can be with the time and track the 1st optical interference signals and the 2nd optical interference signals
Signal phase difference.That is, the polishing layer of chip is formed by identical material, therefore, with the 1st optical interference signals and the 2nd interference of light
The numerical value of the sinusoidal waveform of signal is compared, and is adjusted the pressure for being applied to chip, is tracked the 1st light to eliminate with the time
The signal phase difference of interference signal and the 2nd optical interference signals, it is possible thereby to equably adjust the polishing layer thickness of chip.
On the other hand, rubbing head, which has, is divided into multiple multiple pressure chambers including the 1st pressure chamber and the 2nd pressure chamber,
By means of the rubbing head, the chip can be pressurized in the polishing process.Moreover, the 1st position and the described 2nd
Position is located at the downside of mutually different pressure chamber, if the 1st optical interference signals are lagged than the 2nd optical interference signals,
It then improves by means of the 1st pressure chamber and to the 1st pressure that the chip imports, so that than by means of the 2nd pressure chamber
And the 2nd pressure for importing the chip is high, or the pressure for the adjuster that polishing pad corresponding with the 1st position contacts further is dropped
Low, induction further increases polishing pad height, by means of this, mutually can comparably adjust the wafer polishing thickness of the 1st position
The wafer polishing thickness degree of degree and the 2nd position.
The method could only be applied in the case where meeting following condition, that is, the light irradiated to polishing layer had both been thrown
Photosphere surface is reflected, also pass through polishing layer and reflected being not through layer, these reflected lights interfere, output with
Time and the output valve (intensity) being increased and decreased similar to sinusoidal waveform, therefore, the polishing layer by light transmission material
It is formed.For example, can be formed by oxide skin.
Particularly preferably described 1st pressure chamber and the 2nd pressure chamber are the pressure chamber being configured adjacently in the pressure chamber.
The optical interference signals that the 1st position on the downside of the 1st pressure chamber and the 2nd position on the downside of the 2nd pressure chamber obtain as a result, are no more than half
Period accurately perceives the thickness deviation of wafer polishing layer from the 1st optical interference signals and the 2nd optical interference signals, can reliably body
The region (zone) of existing pressing force chamber reduces the polishing process of polishing layer thickness deviation.
On the other hand, the illumination part irradiation has the light of 2 above wavelength, and the light receiver, which receives, has 2
The light of above wavelength；The control unit is believed in the received interference of light for multi-wavelength light in the 1st position and the 2nd position
In number, select at least one corresponding 1st optical interference signals of wavelength value with set phase value and the 2nd light dry
Signal is related to, the 1st optical interference signals and the 2nd optical interference signals is compared, adjusts the polishing layer thickness of chip.
That is, if thickness of the wafer polishing layer in different position were identical, in the reflected light of each position reflection
Phase difference and luminous intensity deviation is not present in optical interference signals about phase co-wavelength, but wafer polishing layer is in different position
If thickness is different, each position reflection reflected light the optical interference signals for phase co-wavelength there are phase difference and
Luminous intensity deviation.Therefore, with find out polishing layer thickness from optical interference signals and compare the polishing layer that finds out in different position
Thickness value is compared to adjust pressure by the region of chip, by based on the optical interference signals obtained in different position
Phase difference and luminous intensity deviation and the pressure for adjusting each region of chip, can be realized one kind can simpler, accurately eliminate
The control mode of wafer polishing layer thickness deviation.
Therefore, the 1st optical interference signals and the 2nd optical interference signals are selected as and to control the rubbing head pressure
The wavelength value of used optical interference signals is selected as the optical interference signals with the wavelength value by " set phase value ", because
And it is changed with the progress of the wafer polishing process.Though that is, the 1st optical interference signals and the 2nd optical interference signals
It is so the optical signal of any one wavelength, still, with the progress of polishing process, is selected to control polishing layer thickness deviation
And the wavelength value of the optical interference signals for comparing the 1st position and the 2nd position polishing layer thickness deviation will then change.
The set phase value can be determined as in the 1st optical interference signals and the 2nd optical interference signals arbitrarily
One luminous intensity (intensity) relative to time shaft peak value (peak) or thus depending on error range within (such as
Within 5%) value.By this, pressure controlled optical interference signals of the perception for rubbing head etc. are extremely easy and accurate,
It can be easy and accurately carry out the progress with polishing process and reach the 1st optical interference signals and another one of time shaft peak value
The phase bit comparison for the 2nd optical interference signals set.
Wherein, in this specification and patent claims, " peak value " and term similar thereto are defined as whole packets
Optical interference signals downside peak value and upside peak value in time (sec) axis as time goes by are included, can also be censured unusual
It is worth (singular value).
For the polishing layer thickness deviation of the 1st position and the 2nd position for obtaining chip in real time continuous in polishing process, only
When thering is the luminous intensity of any one in the 1st optical interference signals of the 1st position and the 2nd optical interference signals of the 2nd position to be continued in
Between axis peak value, could accurately and easily compare the interference of light obtained for any one optical interference signals in different location
The deviation (predominantly phase difference) of signal.But the light of single wavelength, luminous intensity is with polishing layer thickness variation and with sine
Therefore wave morphology change simply by virtue of the optical interference signals of 2~3 or so wavelength values, exists and is difficult to continuously perceive polishing thickness
Spend the limitation of deviation.
On the contrary, for the present invention, the illumination part irradiates white light, light receiver receives the reflected light of white light,
Optical interference signals corresponding with countless more wavelength values are received, had thus selected the optical interference signals of the 1st position and the 2nd position both
Fixed phase value (luminous intensity is the peak value person in time shaft), in the wavelength value of selection, obtains the 1st optical interference signals and the 2nd
The phase difference or luminous intensity difference of optical interference signals, by means of this, can obtain can be during the progress of polishing process always
The effect of the continuous optical interference signals deviation for obtaining the 1st position and the 2nd position.
For this purpose, further including spectroscope, the spectroscope is directed to the received reflected light of the light receiver, every given wavelength
Optical interference signals are extracted and are obtained at interval (1nm~5nm), and the optical interference signals that the spectroscope extracts send the control to
Portion processed.
The present invention can monitor always the optical interference signals of the 1st position and the 2nd position during polishing process carries out as a result,
Deviation (intensity difference exclusive or phase difference) can be to reducing the 1st optical interference signals and the 2nd optical interference signals deviation by means of this
The direction of (phase difference or luminous intensity difference) adjusts always the pressure of multiple pressure chambers of rubbing head in real time during polishing process
Therefore power in the polishing process carried out during the short time, can mitigate wafer polishing layer thickness deviation, more accurately, reliably
Embody the effect that polishing process is completed with the polishing layer thickness of homogeneous thickness on the whole in ground.
Wherein, the rubbing head has multiple pressure chambers, and the pressure chamber includes the 1st pressure chamber and the 2nd pressure chamber, and is divided
Be segmented into it is multiple, to chip pressurize；It can be independently adjusted including the 1st pressure chamber and the 2nd pressure chamber and be divided into more
The pressure of a the multiple pressure chamber, to adjust the pressure of the chip.Therefore, chip polishing layer thickness adjusting be by
Separated region (zone) is adjusted on the basis of the pressure zone boundaries of division.
Especially the rubbing head adjusts the pressure applied to the chip, so as to eliminate the 1st optical interference signals and
The phase difference of 2nd optical interference signals, this is more effect.That is, although comparison is dry in the received light in different position
Relate to signal, it is also possible to obtain luminous intensity deviation, but since the optical interference signals of the reflected light of different position are shown as just
The same periodic function of string wave, thus the phase difference of the optical interference signals obtained in different position is compared, it can be more acurrate
The thickness deviation of ground acquisition wafer polishing layer.
Based on this, if the 1st optical interference signals are lagged than the 2nd optical interference signals, adjust by means of described
1st pressure chamber and to the chip import the 1st pressure so that than by means of the 2nd pressure chamber and to the chip import
The 2nd pressure it is high.
It is preferred that the 1st position and the 2nd position are located at the downside of different pressure chamber, positioned at the pressure to adjoin each other
The downside of power chamber.
In " continuously " perception that this specification and patent claims are recorded in the whole text, it is defined as not only including perception
Time interval be totally continuous, and mean and detect within 1ns~2 second with 2~3 or less wavelength
Light is compared, and is perceived with much more dense time interval.
Invention effect
According to the present invention, it in polishing process, even if not calculating the thickness of polishing layer, can also obtain in polishing process
Accurately control the advantageous effects of wafer polishing layer thickness profile.
That is, for the present invention, if thickness of the wafer polishing layer in different position is identical, in each position
Phase difference and luminous intensity deviation is not present in the optical interference signals for phase co-wavelength of the reflected light of reflection, but if wafer polishing
Thickness of the layer in different position is different, then, believe in the interference of light for phase co-wavelength of the reflected light of each position reflection
Number there are phase differences and luminous intensity deviation, based on this principle, based on the optical interference signals obtained in different position
Phase difference and luminous intensity deviation, directly control the pressure in each region of chip, can more easily, accurately disappear so as to obtain
Except the advantageous effects of wafer polishing layer thickness deviation.
As a result, for the present invention, the polishing layer initial stage thickness distribution deposited even with CVD in chip etc. is uneven
One, in the case where inaccuracy calculates wafer polishing thickness degree, to eliminate the interference of light from the received reflected light of wafer polishing layer
The form of deviation of signal adjusts any one in rubbing head and adjuster or more, being capable of reliable and accurate, letter it is possible thereby to obtain
It singly is controlled, to make the thickness distribution of wafer polishing layer become uniform effect in polishing end time point.
Especially the present invention by the 1st position on the downside of the pressure chamber that adjoins each other in multiple pressure chambers of rubbing head and
2nd position compares the 1st optical interference signals and the 2nd optical interference signals respectively, to not obtain the 1st optical interference signals and the 2nd light is dry
The deviation expansion of signal incorrect polishing layer the thickness data more than half period is related to, thus can obtain and improve polishing layer thickness
The effect of the reliability of adjusting.
Importantly, the present invention irradiates the white light comprising all-wave length to wafer polishing layer, it will be from the anti-of white light
The 1st optical interference signals and the 2nd optical interference signals for penetrating light are extracted as throwing the optical interference signals of different wavelength
Photosphere thickness information, to can continuously be compared another in the state that the 1st optical interference signals of extraction are the peak value in time shaft
One the 2nd optical interference signals, thus in polishing process, every denser time interval, continuous obtain becomes pressure control base
The optical interference signals deviation of plinth controls pressure, even if can also obtain more equably to adjust and throw in the polishing process of short time
The effect of photosphere thickness.
Detailed description of the invention
Fig. 1 a is the figure that the common chemo-mechanical polishing device of diagram is constituted,
Fig. 1 b is the chart for illustrating the polishing initial stage optical interference signals according to the reflected light wavelength of wafer polishing layer,
Fig. 1 c is the chart for illustrating the polishing later period optical interference signals according to the reflected light wavelength of wafer polishing layer,
Fig. 1 d is the optical interference signals for specific wavelength of the reflected light of diagram wafer polishing layer as time goes by
Chart,
Fig. 2 is the precedence diagram of the method for the previous perception polishing end time point of diagram,
Fig. 3 is the figure for illustrating the chemo-mechanical polishing system of first embodiment of the invention and constituting,
Enlarged drawing of the Fig. 4 as part " A " of Fig. 3 is the half-sectional view of the rubbing head in polishing,
Fig. 5 a is the enlarged drawing of the part Fig. 4 " B ",
Fig. 5 b is the drawing in side sectional elevation for being shown in the diaphragm of the optical interference signals obtained in multiple pressure chambers by way of illustration,
Enlarged drawing of Fig. 6 a as part " C " of Fig. 5 is for illustrating that light occurs according to chip oxide layers thickness to be done
The figure of the principle of signal is related to,
Fig. 6 b is the chart for illustrating the polishing initial stage optical interference signals according to the reflected light wavelength of wafer polishing layer,
Fig. 6 c is the chart for illustrating the polishing later period optical interference signals according to the reflected light wavelength of wafer polishing layer,
Fig. 6 d is figure of the diagram with the optical interference signals of chip oxide layer thickness variation (polishing time variation),
Fig. 7 a and Fig. 7 b are the figures for illustrating action principle of the invention,
Fig. 8 is the precedence diagram for illustrating the chemo-mechanical polishing control method of first embodiment of the invention,
Fig. 9 a is illustrated for various wavelength as the light of chip oxide layer thickness variation (polishing time variation) is dry
The figure of signal is related to,
Fig. 9 b is the figure for illustrating the optical interference signals of the 1st wavelength with chip oxide layer thickness variation,
Fig. 9 c is the figure for illustrating the optical interference signals of the 2nd wavelength with chip oxide layer thickness variation,
Figure 10 is the precedence diagram for illustrating the chemo-mechanical polishing control method of the 2nd embodiment of the invention.
[appended drawing reference]
W：Chip f：Polishing layer
Li：Irradiation light Lo：Reflected light
d：The interval t of reflected light：Oxide layer thicknesses
X：Optical interference signals 20：Rubbing head
22：Diaphragm 40：Adjuster
100：Chemo-mechanical polishing system 110：Polishing plate
111：Polishing pad 111a：Transparency window
120：Illumination part 130：Light receiver
140：Control unit 150：Pressure regulating part
160：Spectroscope
Specific embodiment
With reference to the accompanying drawings, the present invention is described in detail.But, in the description of the present invention, in order to make the present invention
Main idea it is more clear, omission known function or composition are illustrated.
As shown in figure 3, the chemo-mechanical polishing system 100 of first embodiment of the invention is for flat polish in wafer W
Bottom surface formed polishing layer f, including：Polishing plate 110 covers polishing pad 111 above and carries out rotation 11d；Slurry supply
Portion's (not shown) supplies slurry on polishing pad 111；Rubbing head 20, in polishing process, so that wafer W is located at
The state of downside pressurizes to wafer W；Adjuster 40 rotates 40d in polishing process, and polishing pad 111 is pressurizeed and is modified；
Illumination part 120, in order to measure the polishing layer f thickness of wafer W and irradiation light Li；Light receiver 130 receives wafer polishing
The reflected light Lo of layer f reflection；Control unit 140 adjusts the pressure of rubbing head 20 based on the reflected light Lo that light receiver 130 measures
The pressure Fc of power and adjuster 40；Pressure regulating part 150, according to the control signal of control unit 140, to the pressure of rubbing head 20
Chamber C1, C2, C3, C4, C5 supply are pneumatic；Spectroscope (spectrometer) 160, the reflected light that light receiver 130 is measured
Lo is classified as the optical interference signals of different wave length.
As shown in figure 3, be formed with transparency window 111a in the polishing plate 110 and polishing pad 111, illumination part 120 from
The burnishing surface irradiation light Li of the lower wafer W for laterally carrying out polishing process of polishing plate 110, light receiver 130 receive wafer W
The reflected light Lo of burnishing surface reflection.In the figure for convenient and graphical representation of exemplary illumination part 120 and light receiver 130 are only
The vertical composition formed, but illumination part 120 and light receiver 130 can also be made of integrally formed optical sensor.
The situation can also be replaced or therewith parallel and with following morphosis, that is, in the formation of the upper surface of polishing plate 110
Recessed portion, installation has the optical sensor 220 of illumination part and light receiver, while being rotated together with polishing plate 110,
By receiving the reflected light Lo of polishing layer reflection during polishing layer f.
" illumination part " and " light receiver " recorded in this specification and patent claims, being defined as whole includes
The composition that is formed independently of each other, integrally formed composition, with a morphogenetic composition of optical sensor shape.
In the following, for convenience, with the composition that 120 irradiation light Li of illumination part, light receiver 130 receive reflected light Lo it is
The heart, the present invention will be described.
During manufacturing semiconductor element, polishing layer f is formed the wafer W by the material that light penetrates.Wherein, " light
The material of transmission " is not limited to the light Li irradiated from illumination part 120 and all penetrates, but including whole confessions from illumination part
1% or more the material penetrated of the light Li of 120 irradiations.For example, polishing layer f can be formed by oxide skin.
Therefore, a part for the light Li that illumination part 120 irradiates is reflected (Loe) on the surface of polishing layer f, irradiation
Another part of light Li passes through polishing layer f, is reflected (Loi) on the surface for being not through layer Wo.
The rubbing head 20 is as shown in figure 4, include：Upside main body 21' receives the transmitting of rotary driving force simultaneously from outside
Rotation；Pedestal 21 links and rotates together with upside main body 21'；Diaphragm 22 is formed with disc by the shape of wafer W
The bottom plate 221 of state, fixinig plate 222 are fixed on pedestal 21；Retaining ring 24 is contacted with polishing pad 111 in polishing process, is configured at
The periphery of diaphragm 22 prevents wafer W to be detached to except rubbing head 20.
222 end of fixinig plate of the slave bottom plate 221 of diaphragm 22 extended annular state upwards, by means of combination member 211
It is fixed on pedestal 21, multiple pressure chamber C1, C2, C3, C4, C5 are formed between diaphragm bottom plate 221 and pedestal 21.Moreover, throwing
Each pressure chamber C1, C2 of shaven head 20 ..., C5 receive pneumatic transmitting from pressure regulating part 150, are independently adjusted pressure,
Therefore, positioned at the downside of diaphragm bottom plate 221 wafer W can with pressing force chamber C1, C2 ..., C5 and adjust pressure different from each other.
Illustrate in the accompanying drawings fixinig plate 222 with the formation of annular state, multiple pressure chamber C1, C2 ..., C5 is with annular concentric
State configuration, the composition that is divided on the basis of rotation center along radial direction, but it is also possible to have consolidating of along the circumferential direction dividing
Stator (not shown), pressure chamber C1, C2 ..., C5 along the circumferential direction divides.Therefore, pressure chamber of the invention all includes
By the above situation divided of any one in radial direction and circumferencial direction.Therefore, rubbing head 20 is by being divided into multiple pressure
Chamber C1, C2 ..., the region (zone) of C5 adjust pressure, by wafer polishing layer of region (zone) control on the downside of pressure chamber
Thickness.
The adjuster 40 crosses and carries out oscillating traverse motion with the state of adjustment disk contact polishing pad 111, to have
There is the radial direction ingredient of polishing pad 111.At this point, the pressure of adjustment disk is adjusted by means of control unit 140, carried out in adjustment disk
It, must be than other regions by the height adjustment of 111 specific region of polishing pad by means of adjusting pressure on the path of oscillating traverse motion
It is higher or lower.
The illumination part 120 has the light Li of given wavelength to the polishing layer f of wafer W irradiation.Wherein, it is irradiated to polishing
The light Li of layer f both can be single wavelength, or 2 or more wavelength.In the case where irradiating 2 or more wavelength,
Republic of Korea's granted patent bulletin the 10-1436557th method that can use the applicant's application and patented power, is obtained
Obtain the effect that can more accurately detect polishing end time point.
Preferably, the light Li that illumination part 120 irradiates can be the multi-wavelength light with 10 or more multi-wavelengths, can be with
It is the white light of the light mixing of whole wavelength.
Illumination part 120 irradiates the position more than at least the 2 of wafer W polishing layer f, it is preferable that irradiation rubbing head 20 is each
At least one lower position S1, S2, S3, S4, S5 of a pressure chamber C1, C2, C3, C4, C5.
The light receiver 130 receives the reflected light that the light irradiated from illumination part 120 is reflected in the polishing layer f of wafer W
Lo.As shown in Fig. 5 a and Fig. 5 b, light Li is irradiated at least one on the downside of each pressure chamber C1, C2, C3, C4, C5 of rubbing head 20
A position S1, S2, S3, S4, S5, thus light receiver 130 receives each reflected light Lo in the position that light Li irradiates.
As shown in Figure 6 a, what the polishing layer and light that the burnishing surface of wafer W can be penetrated by light can not penetrate is not through a layer Wo
Constitute, thus from illumination part 120 irradiate light Li a part polishing layer f surface reflection (Loe), from illumination part
A part of the light Li of 120 irradiations penetrates polishing layer f, is being not through a layer Wo reflection (Loi).Therefore, light receiver 130 is received
Reflected light Lo includes being not through the anti-of layer Wo reflection in the reflected light Loe of the surface reflection of polishing layer f and across polishing layer f
Light Loi is penetrated, minute interval d is arranged in these reflected lights Loe, Loi, proportionally there is light path difference with polishing layer f thickness, because
And it interferes and generates the optical interference signals X similar to sinusoidal wave form.
The control unit 140 is from the received reflected light from each position S1, S2, S3, S4, S5 of light receiver 130
Lo1, Lo2, Lo3, Lo4, Lo5 extract each optical interference signals X (... X2, X3 ...), as shown in Figure 7a, are mapped to identical
On time shaft, and control pressure regulating part 150 and adjuster 40, so as to make each interference of light mapped on same time axis believe
Number X adjusts pressure chamber C1, C2, C3, C4, the C5 for passing through rubbing head 20, by region from mutually internally inconsistent to direction consistent with each other
To wafer W apply pressure p 1, p2 ... p5.
The especially received reflected light Lo (Lo1, Lo2, Lo3, Lo4, Lo5) of light receiver 130, although amplitude can be because of chip
Existing polishing particles, slurry etc. between polishing layer f and light receiver 130 and distort, but because of polishing layer thickness variation caused by
Phase difference hardly distorts, therefore, light of the control unit 140 to occur by each reflected light Lo (Lo1, Lo2, Lo3, Lo4, Lo5)
Based on the phase difference or luminous intensity (intensity) deviation of interference signal X (X1, X2, X3, X4, X5), control pressure chamber C1,
The pressure of C2, C3, C4, C5 and the pressure of adjuster 40, so as to more accurately control the thickness distribution of wafer polishing layer f.
For example, controlling in the case where equably to control the thickness of wafer polishing layer f on the whole so that from each pressure
The light that chamber C1, C2, C3, C4, C5 lower position S1, S2, S3, S4, S5 received reflected light Lo1, Lo2, Lo3, Lo4, Lo5 are obtained
The phase difference of interference signal X is all identical, even if not calculating polishing layer thickness directly as a result, also can equably control chip
Polishing layer f thickness.
Although for this purpose, the optical interference signals obtained from set all position S1, S2, S3, S4, S5 can also be compared once
X1, X2, X3, X4, X5, but in the crystalline substance for the 1st position S1 and the 5th position S5 on the downside of the 5th chamber C5 being located on the downside of the 1st chamber C1
Piece polishing layer f thickness deviation is big, in the case where the half period (half period) more than optical interference signals X1, X5, the control of pressure
System can malfunction, and therefore, as shown in Figure 5 b, preferably be compared under the lesser abutment pressure chamber of wafer polishing layer f thickness deviation
Side position S1, S2；S2,S3；... optical interference signals.
The pressure regulating part 150 is according to the control command transmitted from control unit 140, by pneumatic supply pipe 155, to each
A pressure chamber C1, C2, C3, C4, C5 supply is pneumatic, controls the pressure by means of pressure chamber C1, C2, C3, C4, C5 different from each other
P1, p2, p3, p4, p5 and to wafer W apply pressure.
Wherein, if wafer polishing layer f is identical in different position S1, S2 .. thickness, each position S1,
S2 ... reflection reflected light for phase co-wavelength optical interference signals X1, X2 ... there is no phase difference and luminous intensity it is inclined
Difference, still, if thickness of the wafer polishing layer f in different position is different, each position S1, S2 ... reflection
Reflected light for phase co-wavelength optical interference signals X1, X2 ... there are phase difference phx ... and luminous intensity deviation.
Therefore, polishing layer thickness is found out from optical interference signals, and compares the polishing layer thickness found out in different position
After value, the control command for adjusting the pressure in each region of chip is just generated by control unit 140, thus to pressure regulating part 150
Transmit control command, instead of this, generate for directly elimination different position S1, S2 ... the optical interference signals of acquisition
The phase difference of X1, X2 .. and the control command of luminous intensity deviation, and send pressure regulating part 150 to, so as to further
It the time point for adjusting the pressure in each region of chip in advance, can be more smart by the region (zone) of chip by means of rubbing head 20
Ingeniously, pressure is critically adjusted, thus during both having made the polishing process time for being the short time, can also be obtained with simpler control
Principle more accurately eliminates the effect of wafer polishing layer thickness deviation.
Therefore, the pressure p 1 of application, p2, p3, p4, p5 by means of pressure regulating part 150, can be according to for polishing
Any one time point tx in process eliminates a control signal of optical interference signals deviation and determines, until polishing process knot
Beam, but can also in polishing process, as time goes by and multiple time point t1, t2 at dense interval ..., according to
In the variation for eliminating optical interference signals deviation multiple control commands and change and eliminate the thickness deviation of wafer polishing layer, until
Polishing process terminates.
In the case where irradiating white light (Li) from illumination part 120, the received reflected light Lo of light receiver 130 is all
The state of the light mixing of wavelength, therefore, the spectroscope 160 are used to extract and need from the received reflected light Lo of light receiver 130
Optical interference signals X.It but, further include the composition for irradiating multi-wavelength light the present invention is not limited to irradiate the composition of white light (Li),
Can obtain degree of the optical interference signals relative to the peak value of time shaft by 1 second~2 seconds intervals, irradiation is with 10 with upper ripple
The multi-wavelength light of long value.
Therefore, light receiver 130 is directed to received reflected light Lo, every given wavelength interval (for example, in Fig. 6 b and Fig. 6 c
Optical interference signals are extracted for 1nm~10nm), obtain the optical interference signals according to time (polishing layer thickness) about each wavelength.
The optical interference signals so obtained send control unit 140 to.
For example, in fig. 9 a, illustrate in the received reflected light Lo1 of the 1st position S1, overlapping is about (such as every
5nm) ..., 105nm, 110nm, 115nm ..., 670nm, 675nm ... the optical interference signals of the wavelength value of and the light that illustrates
Interference signal X1, X1', X1 ", X1 " ', X " " ... luminous intensity chart.
As described above, if the white light of the light comprising all wavelengths value is used as irradiation light Li, from spectroscope
Optical interference signals X1, X1' of 160 extractions ... in, a part passes through the peak value Q relative to time shaft, therefore, control unit 140
From in a large amount of optical interference signals that the received reflected light Lo1 of the 1st position S1 is extracted, the 1st interference of light for reaching peak value Q is extracted
Signal X1 extracts the 2nd optical interference signals X2 with the 2nd position of wavelength value identical as extracted 1st optical interference signals X1,
The 1st optical interference signals X1 and the 2nd optical interference signals X2 is compared, it is correspondingly with its phase difference phx, continuous always in polishing process
The polishing layer thickness deviation of the 1st position S1 and the 2nd position S2 of (that is, per dense time interval) monitoring.
Then, with by white light be used as irradiation light Li, can by the optical interference signals X with polishing layer thickness information,
It compares, thus can obtain further with the value for reaching peak value Q in time shaft real-time continuously with time going by
Improve the effect for calculating the accuracy of phase difference.
Narration utilizes the first embodiment of the polishing system 100 of chip of the invention formed as described above in detail below
The polishing control method (S100) of chip.
As shown in figure 8, the chemo-mechanical polishing control method S100 of first embodiment of the invention is used for the throwing in chip
The precise polished oxide skin(coating) of smooth surface, to leave behind set thickness, including：Polishing step S110 carries out chemistry for wafer W
Mechanical polishing process；Light irradiation step S120, during carrying out polishing step S110, to the burnishing surface of wafer W, in wafer W
Mutually different 2 or more positions S1, S2, S3, S4, S5 irradiation have given wavelength light Li；Light-receiving step S130, light
Receiving unit 130 receive wafer W burnishing surface each position S1, S2, S3, S4, S5 reflection reflected light Lo (Lo1, Lo2, Lo3,
Lo4,Lo5)；Pressure adjustment step S140, received each reflected light Lo extracts optical interference signals from light-receiving step S130
X, pressure regulating part 150 controls the pressure p 1 of pressure chamber C1, C2, C3, C4, C5, p2, p3, p4, p5, so as to optical interference signals X phase
It is mutually consistent.
Step 1：The polishing step S110 is as shown in figure 3, the polishing pad covered on the upside of the polishing plate 110 rotated
111 rotate together with polishing plate 110, and wafer W is carried out the polishing of rotation 20d in the state of polishing face contact polishing pad 111
First 20 pressurization, slurry is supplied on polishing pad 111 from slurry supply department not shown in the figure, while being supplied to wafer W into
The wet type polishing process of row wafer W.For the smooth supply of slurry, the adjuster 40 for keeping polishing pad 111 modified is rotation 40d's
Meanwhile it pressurizeing parallel to polishing pad 111.
Step 2：The light irradiation step S120 to mutually different 2 or more position S1, S2 of wafer polishing layer f, S3,
The light Li of S4, S5 irradiation given wavelength.At this point, the light Li of irradiation polishing layer f is determined as entirely for the thickness control of polishing layer f
The identical wavelength in portion, to each underside area at least one of each pressure chamber C1, C2, C3, C4, C5 more than position S1, S2,
S3, S4, S5 irradiation light Li.In Fig. 5 be with to a position S1, S2 of each pressure chamber C1, C2, C3, C4, C5, S3, S4,
For the composition of S5 irradiation light Li, but can also be to 2 or more the position irradiation light Li of each pressure chamber C1, C2, C3, C4, C5.
Step 3：The light-receiving step S130 receives the light Li's irradiated in light irradiation step S120 to wafer W burnishing surface
Reflected light Lo.Reflected light Lo is impermeable in metal etc. with polishing layer f is passed through as the reflected light Loe in polishing layer f surface reflection
The form that the reflected light Loi of layer Wo reflection merges is crossed, light path difference occurs, reflected light Loe, Loi advanced with fine interval d
It interferes, generates optical interference signals X.In light-receiving step S130, they are all received by light receiver 130.
Step 4：The pressure adjustment step S140 is from light-receiving step S130 in the position mutually different polishing layer f
The received reflected light Lo of S1, S2, S3, S4, S5 extracts each optical interference signals X (... X2, X3 ...), they is mapped in together
It on one time shaft and is compared, based on the optical interference signals X (... X2, X3 ...) by comparison, controls the pressure of rubbing head 20
The pressure p 1 of power chamber C1, C2, C3, C4, C5, p2, p3, p4, p5.
More specifically, as shown in Figure 6 a, in the surface Sx of the polishing layer f of the wafer W reflected light Loe reflected and across crystalline substance
The polishing layer f of piece W and in the reflected light Loi for being not through layer Wo reflection, although being irradiated from identical light source, be arranged between each other
There is the light path difference proportional to the thickness t of polishing layer f in fine interval d, therefore, reflected light Loe, Loi is mutually dry
While relating to, the optical interference signals X (that is, interference light) for being similar to sinusoidal waveform is generated.
As shown in Figure 6 a, under the thicker CMP A-stage of the initial stage thickness to of polishing layer f, in the surface So of polishing layer f
Although the reflected light Loi' of reflection and the interval do phase the reflected light Loe' for being not through layer Wo reflection across polishing layer f
To larger, but with the continuation of polishing process, the thickness t of polishing layer f is gradually thinning, closer to target thickness (for example,), it is reflected with polishing layer f is passed through being not through layer Wo in the reflected light Loi that the surface Sx of polishing layer f is scattered
Reflected light Loe between interval d be gradually reduced, therefore, the waveform of optical interference signals X has as polishing layer f thickness is thinning
And the tendentiousness changed relative to wavelength.Therefore, as shown in Fig. 6 b and Fig. 6 c, in the white light spectrum of all wavelength
Optical interference signals X the relatively narrow form of waveform interval Y of Wavelength strength (intensity) is presented in the early stage, with the warp of time
It crosses, is changed to the waveform that interval Y' is gradually widened.
On the other hand, the present invention is the light Li for having given wavelength to the irradiation of the burnishing surface of wafer W, therefore, in wafer W
The reflected light Lo of the burnishing surface reflection and optical interference signals X thus generated is that the optical interference signals X of given wavelength is merged
Form.For example, the white light in the section 1nm~1050nm with uniform intensity is being used as irradiation light and to the polishing of wafer W
In the case where layer f irradiation, the received reflected light Lo such as Fig. 6 b and Fig. 6 c institute as optical interference signals X combination of light receiver 130
Show.
Under CMP A-stage, as shown in Figure 6 b, the received reflected light Lo of light receiver 130 covers multiple wavelength, and light is dry
Form similar to sinusoidal waveform is presented according to wavelength X for the intensity (intensity) for relating to signal X, with relatively narrow interval Y frequentative
At.Moreover, continuing with polishing process, the thickness of oxide skin(coating) is gradually thinning, as shown in Figure 6 b, according to wavelength X, the interference of light
The intensity of signal X keeps being similar to sinusoidal waveform, but the interval Y' between them is gradually widened.
If examining or check it with time (or oxide skin(coating) centered on a wavelength (for example, the 1st wavelength be 469nm)
Thickness) process and change tendency then as shown in fig 6d the intensity of the optical interference signals X of a wavelength X 1 is similar to
Sinusoidal waveform has tendency up and down repeatedly.In other words, if the thickness of wafer polishing layer f with polishing process and gradually
Thinning, then as shown in Figure 6 b, with the process of polishing process time, variation is positive by optical interference signals (intensity output)
String waveform.
That is, the light about a wavelength is dry during oxide layer thicknesses are thinning with the progress of polishing process
It relates to signal X and generates periodic waveform, thus according to the value V1 of optical interference signals, it can not accurately know the thickness t of polishing layer f, because
This, relied on always in the past for the circulation change of the optical interference signals (or interference light) of a wavelength or period by number (example
Such as, after polishing starts, by 3 periods, then reach final goal thickness), detection polishing end time point.Moreover, one
The straight thickness for attempting to calculate wafer polishing layer f by the value of number and optical interference signals in variation from circulation and period.
But the value of optical interference signals distorts slightly because of the foreign substances between light receiver 130 and polishing layer f, in standard
There is limitation in terms of really calculating thickness, for the polishing layer thickness about any one value of optical interference signals X V1, is not only throwing
Repeated multiple times t1, t2 .. in light process, and believe including being compensated to error caused by signal distortion, thus from the interference of light
Number value calculate polishing layer thickness, need extremely complex calculation, thus wafer polishing layer is obtained in practical polishing process
Thickness value is excluded always except being actually applicable in.
In contrast, the thickness that the present invention does not calculate wafer polishing layer f not instead of directly is compared as shown in Figure 7a
Any one time point tx, the optical interference signals X obtained in mutually different position S1, S2, S3, S4, S5 in polishing process,
It is controlled to the direction for eliminating optical interference signals X deviation.
If to be connect from adjacent the 2nd position S2 being located on the downside of the 2nd pressure chamber C2 and the 3rd pressure chamber C3 and the 3rd position S3
For reflected light Lo2, Lo3 of receipts, from the interference of light as time goes by obtained in the received reflected light Lo2 of the 2nd position S2
Signal X2 value Q2, can with from the 1st set moment tx, the received reflected light Lo3 of the 3rd position S3 obtain as the time passes through
Phase difference phx occurs for the value Q3 of the optical interference signals X3 crossed.That is, the optical interference signals X2 of the 2nd position S2, than the 3rd position S3's
Optical interference signals X3 lag phx phase difference, which means that the 2nd position S2 polishing layer of the polishing layer thickness than the 3rd position S3
Thickness is thicker (owing polishing).
Therefore, control unit 140 controls the pressure of pressure regulating part 150 and adjuster 40, to make to connect from light receiver 130
The reflected light Lo (..., Lo2, Lo3 ...) of receipts is consistent.That is, control unit 140 controls the pressure p 2 to the so that the 2nd pressure chamber C2
The pressure p 3 of 3 pressure chamber C3 further increases, and makes the polishing for being located at the unit time in the wafer W region on the downside of the 2nd pressure chamber C2
Rate further increases, and eliminates the thickness deviation of the 2nd position S2 and the 3rd position S3.At the same time or independently of this, control unit 140
For the region of polishing pad 111 corresponding with the bottom surface of the 2nd pressure chamber C2, control carries out pendulum motion so that further decreasing
The pressure of adjuster 40, induction so that the height of polishing pad 111 with the bottom surface corresponding region of the 2nd pressure chamber C2, than with the 3rd pressure
111 height of polishing pad of the bottom surface corresponding region of chamber C3 is higher, is located on the downside of the 2nd pressure chamber C2 so as to further increase
The polishing rate of the unit time in wafer W region.
Adjust as a result, the pressure p 1 of pressure chamber C1, C2, C3, C4, C5 of the rubbing head 20 to wafer W pressurization, p2, p3,
P4, p5, or the pressure Fc of adjuster 40 is adjusted, by means of this, after the 1st moment tx, the throwing of the unit time of the 2nd position S2
The polishing layer polishing rate of unit time of the photosphere polishing rate higher than the 3rd position S3, therefore, as shown in Figure 7b, the light of the 2nd position S2
The change rate of interference signal X2' is bigger, and in the 2nd moment ty by the time to a certain degree, the 2nd position is tracked with the time
The deviation (phase difference and interference of light output valve) of the signal of the optical interference signals X3 of the optical interference signals X2 and the 3rd position S3 of S2 can
To be eliminated.I.e., it means that the polishing layer thickness of the 2nd position S2 and the polishing layer thickness of the 3rd position S3 become mutually uniform.
Pressure adjustment step S140 both can only carry out one in the 1st set moment tx in the polishing process of wafer W
It is secondary, set time interval also can be set and execute repeatedly.
The 2nd embodiment of the present invention of the polishing system 100 of chip formed as described above is utilized in narration in detail below
The polishing control method S200 of chip.
The polishing control method S100 of aforementioned 1st embodiment is the optical interference signals X compared according to a wavelength value, thus
The tx at the time of position for comparing the 2nd optical interference signals X2 and the 3rd optical interference signals X3 is determined as set believes in the 2nd interference of light
In the case where any one in number X2 and the 3rd optical interference signals X3 and non-peak Q, in the phase difference or light intensity difference for calculating them
Mistake can occur for different aspect.Moreover, any one is the feelings of peak value Q in the 2nd optical interference signals X2 and the 3rd optical interference signals X3
Under condition, these optical interference signals X2, X3 during region (half period), can not be obtained between peak value and peak value in time shaft
Phase difference or luminous intensity difference, thus pressure can not be continuously adjusted, exist and terminates in the pressure for generating 2 times~3 times in polishing process
The limitation of force control signal.
Therefore, the polishing control method S200 of chip of the 2nd embodiment of the invention and the difference of the 1st embodiment are, light
Irradiation portion 120 is for example by the white light with uniform intensity in all-wave length or the multi-wavelength at least ten above wavelength value
Light is irradiated as irradiation light to wafer polishing layer f, and from the spectrum of the received reflected light Lo of light receiver 130, extraction reaches peak value
The optical interference signals of (Q of Fig. 9 a), comparison is located at the optical interference signals of 2 positions on the downside of adjacent pressure chamber, in buffer
During sequence, with the progress of polishing process, substantially every 1000 nanosecond~2 second dense time interval below, always continuously
Each pressure chamber C1, C2 of generation control regulator 40 or rubbing head 20 ... the pressure controling signal of pressure persistently adjusts chip
The pressure in each region.
Step 1：As aforementioned 1st embodiment, as shown in figure 3, the throwing covered on the upside of the polishing plate 110 rotated
Light pad 111 is rotated together with polishing plate 110, and wafer W is carried out rotation 20d's in the state of polishing face contact polishing pad 111
Rubbing head 20 pressurizes, and slurry is supplied on polishing pad 111 from slurry supply department not shown in the figure, is being supplied to the same of wafer W
The wet type polishing process of Shi Jinhang wafer W.For the smooth supply of slurry, the adjuster 40 for keeping polishing pad 111 modified is rotating
It pressurizes while 40d to polishing pad 111, and pad interface height can be adjusted parallel, when adjusting the unit in each region of chip
Between polished amount.
Step 2：The light irradiation step S120 using white light as irradiation light Li, irradiate rubbing head 20 each pressure chamber C1,
At least one position on the downside of C2, C3, C4, C5.That is, being to one of each pressure chamber C1, C2, C3, C4, C5 in Fig. 5
For the composition of position S1, S2, S3, S4, S5 irradiation light Li, but can also be to 2 of each pressure chamber C1, C2, C3, C4, C5
The above position irradiation light Li.
Step 3：The reflected light Lo for receiving the light Li that light irradiation step S120 is irradiated to wafer W burnishing surface, will be received anti-
Penetrate light Lo by each wavelength be divided into optical interference signals X1, X1', X1 " ..., send control unit 140 to.
Wherein, spectroscope 160 can be from the received reflected light Lo in any one position, every 1nm~10nm's or so
It is spaced (the preferably interval of 3nm~5nm) and extracts optical interference signals, send the optical interference signals of extraction to control unit 140.Example
Such as, in the received reflected light Lo1 of the 1st position S1, optical interference signals are extracted with the interval 5nm, will be for ..., 105nm,
110nm, 115nm ..., 670nm, 675nm ... the optical interference signals of the wavelength value of send control unit 140 to.
Step 4：The multiple optical interference signals for sending control unit 140 in step 3 to, be each position S1, S2 ... by 5nm
It is spaced the optical interference signals extracted (referring to Fig. 9 a).
Wherein, control unit 140 selects luminous intensity (intensity) with throwing from a large amount of optical interference signals (spectrum)
The progress of light process and the optical interference signals for reaching the wavelength value of peak value Q on time shaft.For example, received in the 1st position S1
A large amount of optical interference signals X1, X1', X1 " shown in Fig. 9 a ... in, as shown in figure 9b, it is up to the 1st wavelength of the 1st peak value Q1
The optical interference signals of (for example, 465nm) are selected as the 1st optical interference signals X1 of the 1st position S1.
It is selected moreover, control unit 140 in the received a large amount of optical interference signals of the 2nd position S2, will have in the 1st position S1
The interference of light of identical 1st wavelength value (for example, 465nm) of the 1st wavelength value (for example, 465nm) of the 1st optical interference signals X1 selected
Signal behavior is the 2nd optical interference signals X2 (S230).
Then, as shown in figure 9b, comparison as the progress with polishing process and the 1st light of the peak value in time shaft do
Signal X1 and the 2nd optical interference signals X2 are related to, obtains the phase difference phx or luminous intensity of their X1, X2 in the 1st moment t1
(intensity) difference value.
At this point, average value, the maximum value, minimum of each phase difference can be used if being detected simultaneously by multiple phase differences
Any one in value.
Moreover, before and after as the 1st moment t1 time point the 2nd moment t2, the 1st wavelength value (for example, 465nm)
The 1st optical interference signals X1 become in time shaft do not have peak value state.Therefore, as is shown in fig. 9 c, control unit 140 is big
In the optical interference signals of amount, the optical interference signals that luminous intensity (intensity) reaches the wavelength value of peak value Q are reselected.For example,
A large amount of optical interference signals X1, X1', X1 " shown in the received Fig. 9 a of the 1st position S1 ... in, it is up to the 2nd peak value Q1''s
The optical interference signals of 2nd wavelength (for example, 430nm) are selected as the 1st optical interference signals X1' of the 1st position S1.
It is selected moreover, control unit 140 in the received a large amount of optical interference signals of the 2nd position S2, will have in the 1st position S1
The light of identical 2nd wavelength value (for example, 430nm) of the 2nd wavelength value (for example, 430nm) of the 1st optical interference signals X1' selected is dry
Relating to signal behavior is the 2nd optical interference signals X2'(S230).
As described above, in the 2nd embodiment of the invention, the wavelength of the optical interference signals for obtaining polishing layer thickness information
Value constantly changes.
Then, as is shown in fig. 9 c, comparison as the progress with polishing process and the 1st light of the peak value in time shaft do
Signal X1' and the 2nd optical interference signals X2' are related to, obtains the phase difference phx' or luminous intensity of their X1', X2' in the 2nd moment t2
(intensity) difference value.
As described above, control unit 140 from any one position S1, S2 ... received reflected light Lo1, Lo2 ...
In the optical interference signals for a large amount of wavelength values extracted, the optical interference signals by the optical interference signals with peak value Q, with adjoining position
Comparison obtains polishing layer thickness information, so as to continuously obtain polishing layer thickness deviation always during carrying out polishing process
Information.
Especially as shown in Figure 5 b, by means of comparing adjoining position S1, S2；S2,S3；... optical interference signals X1, X2,
X3, X4, X5, can prevent the deviation of optical interference signals have the half period with the upper deviation in the case where that thickness information occurs is wrong
Accidentally.
Wherein, in order to obtain the thickness deviation information of the 1st position S1 and the 2nd position S2, when the 1st position S1, which is determined, to be had
Between axis peak value the 1st wavelength value the 1st optical interference signals X1, in contrast the 2nd position S2 determine have the 1st wavelength
After 2nd optical interference signals X2 of value, their X1, X2 are compared.Moreover, in order to obtain the 2nd position S2's and the 3rd position S3
Thickness deviation information does not utilize the 2nd optical interference signals X2 of the 1st wavelength value directly, but will have peak value in the 2nd position S2
The optical interference signals of 2nd wavelength value are selected as the 2' optical interference signals with the comparison of the optical interference signals of the 3rd position S3,
In the 3rd position S3, after the optical interference signals of the 2nd wavelength value are selected as the 3rd optical interference signals, comparison 2' optical interference signals with
3rd optical interference signals.It is similar, the interference of light of thickness deviation of the selection for obtaining the 3rd position S3 and the 4th position S4 respectively
The optical interference signals of signal, thickness deviation for obtaining the 4th position S4 and the 5th position S5.
In this way, control unit 140 is directed to any one position, and selection has the time with the progress of polishing process
The optical interference signals of " peak value " in axis compare with the optical interference signals of the adjoining position of the position, obtain the polishing of 2 positions
The relevant information of layer thickness deviation, thus the comparison that can obtain optical interference signals is more easier and accurate effect.
Wherein, " peak value " is preferably accurate peak value, but according to circumstances, also may include relative to the peak value in time shaft
And the value within the scope of 5% or so allowable error.
Furthermore, only dry in light in the case where comparison has the optical interference signals of predetermined wavelength value
The correlation of polishing layer thickness deviation of 2 positions could be obtained by relating to position (As of Fig. 9 b) of the signal in time shaft with peak value
Information still with white light is utilized as described above, selects the optical interference signals for having peak value in time shaft, even if in Fig. 9 b
The region for being identified as Ax, it is also possible to obtain the relevant information of polishing layer thickness deviation.That is, the present invention is in the polishing process duration
Between, the polishing layer thickness deviation of 2 positions can be continuously obtained always.
Wherein, the time interval of polishing layer thickness deviation information is obtained according to the interval of the wavelength value from white light extraction
(preferably 1nm~10nm) is determined, in the case where being divided into 10nm between the wavelength value of extraction, can be spaced at least every 0.1 second
Within obtain polishing layer thickness deviation information, therefore, " continuous " meaning recorded in this specification and patent claims
It is defined as obtaining polishing layer thickness deviation information within every 0.1 second.
As described above, control unit 140 can continuous always during polishing process, accurately monitor between each adjacent position
The thickness deviation of polishing layer f.
Step 5：Moreover, being done to the light containing the polishing layer thickness deviation data obtained in step 4 by control unit 140 is eliminated
The phase difference of signal or the direction of luminous intensity difference are related to, the pressure that each pressure chamber applies similarly is calculated with aforementioned 1st embodiment
And it is generated as control signal, control pressure regulating part 150 and adjuster 40.
But, in the 2nd embodiment, the thickness deviation information of polishing layer f is continuously obtained by means of control unit 140,
Thus based on the polishing layer thickness deviation information continuously obtained, control unit 140 makes to control pressure regulating part 150 and adjuster 40
Control signal continuously change in real time, control so that eliminate wafer W polishing layer thickness deviation.
As described above, the control signal for being used in the thickness deviation of elimination wafer polishing layer continuously changes and controls pressure tune
Section portion 150 etc., even if so that can obtain can tie in polishing in the case that the time especially needed for polishing process is very short
Beam time point more completely eliminate each position S1, S2 ... wafer polishing layer thickness deviation advantageous effects.
As described above, the present invention is in polishing process, even if the thickness of polishing layer f is not calculated directly, by buffer
Sequence continuously obtains always polishing layer thickness deviation relevant information during carrying out, and is continuously generated the control signal to make corrections to it simultaneously
Controlled, it is hereby achieved that advantageous effects be, can be whole in the state that wafer polishing layer f reaches target thickness
On equably control the polishing layer thickness profile of wafer W.
In the aforementioned embodiment, it for equably adjusting the composition of wafer polishing layer thickness profile on the whole, but is wanting
By a part (for example, edge) of wafer polishing layer adjust than other polishing layer regions it is thicker or thinner in the case where, adjust
The optical interference signals of the 5th position S5 of outermost pressure chamber C5 must be made more stagnant than the optical interference signals ... of other positions, X2, X3 ..
It is afterwards or both quantitative in advance, by means of this, the thickness distribution of polishing layer can also be accurately adjusted to desired distribution.
Even if the present invention does not calculate the thickness of polishing layer f directly in polishing process as a result, in different position
The optical interference signals X that S1, S2, S3, S4, S5 are obtained, to eliminate the deviation of signal that is tracked with the time (optical interference signals
It is more than any one in output valve and phase difference) direction, in the pressure Fc for controlling the pressure and adjuster 40 that apply to wafer W
More than any one, by means of this, it is also possible to obtain wafer polishing thickness degree is adjusted to the desired advantageous effects being distributed.
Above by preferred embodiment, the present invention is illustratively illustrated, but the present invention is not limited to this specific reality
Example is applied, it can be in the scope for the technical idea that the present invention prompts, specifically, the model that can be recorded in patent claims
In farmland, modification, change or improvement are various form.
Claims (26)
1. a kind of polishing system of chip, the chip are formed with the polishing layer of photopermeability material in bottom surface, which is characterized in that
Including：
Polishing pad rotates on polishing plate；
Illumination part, to the polishing layer irradiation light of the chip；
Adjuster pressurizes and is modified to the polishing pad；
Light receiver receives the 1st optical interference signals reflected in the 1st position of the polishing layer and is being different from described the
2nd optical interference signals of the 2nd position reflection of 1 position；
Control unit adjusts the pressure of rubbing head pressurize to the chip, to reduce the 1st optical interference signals and described the
The deviation of 2 optical interference signals.
2. the polishing system of chip according to claim 1, which is characterized in that
It further include the adjuster being modified to the surface of the polishing pad,
The control unit adjusts institute in the form of reducing the control of the 1st optical interference signals and the 2nd optical interference signals deviation
Adjuster is stated to the pressure of the polishing pad.
3. polishing according to claim 2 polishes control method, which is characterized in that
It, will region corresponding with the 1st position if the 1st optical interference signals are lagged than the 2nd optical interference signals
In the pressure reduction of adjuster be, lower than the pressure of the adjuster in region corresponding with the 2nd position.
4. the polishing system of chip according to claim 1, which is characterized in that
The rubbing head, which has, is divided into multiple pressure chambers, and the pressure chamber includes the 1st pressure chamber and the 2nd pressure chamber, is used for
It pressurizes to chip；
1st position and the 2nd position are the downside positions of mutually different 1st pressure chamber and the 2nd pressure chamber
It sets.
5. the polishing system of chip according to claim 4, which is characterized in that
The rubbing head is independently adjusted the pressure for being divided into multiple pressure chambers, adjusts the pressure of the chip.
6. the polishing system of chip according to claim 5, which is characterized in that
1st pressure chamber and the 2nd pressure chamber are the pressure chambers being configured adjacently in the multiple pressure chamber.
7. the polishing system of chip according to claim 1, which is characterized in that
The rubbing head adjusts the pressure applied to the chip, dry to eliminate the 1st optical interference signals and the 2nd light
Relate to the phase difference of signal.
8. the polishing system of chip according to claim 1, which is characterized in that
The rubbing head adjusts the pressure applied to the chip, dry to eliminate the 1st optical interference signals and the 2nd light
Relate to the deviation of the luminous intensity (intensity) of signal.
9. the polishing system of chip according to claim 1, which is characterized in that
The polishing layer is oxide skin(coating).
10. the polishing system of chip according to claim 1, which is characterized in that
If the 1st optical interference signals are lagged than the 2nd optical interference signals, control unit if, makes through the 1st pressure
The 1st pressure that power chamber is imported to the chip is higher than the 2nd pressure imported by the 2nd pressure chamber to the chip.
11. the polishing system of chip described according to claim 1~any one of 10, which is characterized in that
The light receiver receives the optical interference signals of at least one position in the downside of all the multiple pressure chambers respectively.
12. the polishing system of chip described according to claim 1~any one of 10, which is characterized in that
The illumination part irradiation has the light of 2 above wavelength, and the light receiver receives the light with 2 above wavelength；
The control unit is in the received optical interference signals for multi-wavelength light in the 1st position and the 2nd position, selection
For the 1st optical interference signals of at least one wavelength value with set phase value and the 2nd optical interference signals, and it is right
Than the 1st optical interference signals and the 2nd optical interference signals.
13. the polishing system of chip according to claim 12, which is characterized in that
It is selected as the 1st optical interference signals and the 2nd optical interference signals and the pressure to control the rubbing head is made
The wavelength value of optical interference signals is changed with the progress of the polishing process of the chip.
14. the polishing system of chip according to claim 12, which is characterized in that
The set phase value is the luminous intensity of any one in the 1st optical interference signals and the 2nd optical interference signals
(intensity) peak value in time shaft (peak) or thus depending on error range within value.
15. the polishing system of chip according to claim 12, which is characterized in that
The illumination part irradiates white light, and the light receiver receives the reflection that the white light reflects in the chip
Light.
16. the polishing system of chip according to claim 14, which is characterized in that
The control unit selects any one in time shaft in the 1st optical interference signals and the 2nd optical interference signals
The optical interference signals of wavelength value with peak value adjust the pressure of the rubbing head real-time continuously.
17. the polishing system of chip according to claim 14, which is characterized in that
It further include spectroscope, the spectroscope is directed to the received reflected light of the light receiver, extracts every given wavelength interval
And optical interference signals are obtained, the optical interference signals extracted from the spectroscope send the control unit to.
18. a kind of polishing control method of chip, the chip are formed with the polishing layer of photopermeability material, feature in bottom surface
It is, including：
Polishing step is polished for the polishing layer of the chip；
Light irradiation step, the 1st position and the 2nd position irradiation light to the polishing layer of the chip；
Light-receiving step receives the 1st reflected light of the 1st position of the chip and the 2nd reflected light of the 2nd position；
Pressure adjustment step adjusts the pressure applied to the chip, dry to eliminate the 1st light from the 1st reflected light
Relate to the deviation of signal and the 2nd optical interference signals from the 2nd reflected light.
19. the polishing control method of chip according to claim 18, which is characterized in that
The rubbing head, which has, is divided into multiple pressure chambers, and the pressure chamber includes the 1st pressure chamber and the 2nd pressure chamber, described
1st position and the 2nd position are located at the downside of mutually different pressure chamber,
If the 1st optical interference signals are lagged than the 2nd optical interference signals, make through the 1st pressure chamber to described
The 1st pressure that chip imports is higher than the 2nd pressure imported by the 2nd pressure chamber to the chip.
20. the polishing control method of chip according to claim 18, which is characterized in that
The pressure adjustment step further includes：
Adjuster rate-determining steps will be with the described 1st if the 1st optical interference signals are lagged than the 2nd optical interference signals
The pressure reduction of adjuster in the corresponding region in position is, lower than the adjuster in region corresponding with the 2nd position
Pressure.
21. the polishing control method of chip described in any one of 8~20 according to claim 1, which is characterized in that
The illumination part irradiation has the light of 2 above wavelength, and the light receiver receives the light with 2 above wavelength；
The control unit is in the 1st position and the received optical interference signals for multiple wavelength in the 2nd position, selection
For the 1st optical interference signals of at least one wavelength value with set phase value and the 2nd optical interference signals, and it is right
Than the 1st optical interference signals and the 2nd optical interference signals.
22. the polishing control method of chip according to claim 21, which is characterized in that
It is selected as the 1st optical interference signals and the 2nd optical interference signals and the pressure to control the rubbing head is made
The wavelength value of optical interference signals is changed with the progress of the polishing process of the chip.
23. the polishing control method of chip according to claim 21, which is characterized in that
The set phase value be any one in the 1st optical interference signals and the 2nd optical interference signals it is above when
Between peak value (peak) in axis.
24. the polishing control method of chip according to claim 21, which is characterized in that
The illumination part irradiates white light, and the light receiver receives the reflection that the white light reflects in the chip
Light.
25. the polishing control method of chip according to claim 24, which is characterized in that
The control unit selects any one with buffer in the 1st optical interference signals and the 2nd optical interference signals
The progress of sequence and with the corresponding optical interference signals of wavelength value of peak value in time shaft, and adjust the rubbing head in real time
Pressure.
26. the polishing control method of chip according to claim 25, which is characterized in that
For the received reflected light of the light receiver, the optical interference signals of every 1nm~10nm are extracted, are believed in the interference of light of extraction
In number, with the progress of polishing process and on a timeline with the wavelength value of peak value, the described 1st is selected at the 1st moment
Optical interference signals and the 2nd optical interference signals, and the pressure of the rubbing head is adjusted, to eliminate the 1st interference of light letter
Number and the 2nd optical interference signals deviation.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20160057308 | 2016-05-11 | ||
| KR1020170058505A KR102368789B1 (en) | 2016-05-11 | 2017-05-11 | Method of polishing wafer with oxide film and system using same |
| KR10-2017-0058505 | 2017-05-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108857859A true CN108857859A (en) | 2018-11-23 |
| CN108857859B CN108857859B (en) | 2020-03-10 |
Family
ID=60808904
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621162037.5U Active CN207058321U (en) | 2016-05-11 | 2016-10-25 | The polishing system of chip with oxide skin(coating) |
| CN201710446753.9A Active CN108857859B (en) | 2016-05-11 | 2017-06-14 | Wafer polishing control method and polishing system |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621162037.5U Active CN207058321U (en) | 2016-05-11 | 2016-10-25 | The polishing system of chip with oxide skin(coating) |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102368789B1 (en) |
| CN (2) | CN207058321U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110126106A (en) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | Wafer processing method |
| CN111515864A (en) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | Monitoring method and system for diamond disk |
| CN115026715A (en) * | 2021-03-05 | 2022-09-09 | 应用材料公司 | Control of process parameters for substrate polishing with substrate precession |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102192518B1 (en) | 2020-07-14 | 2020-12-17 | 에스케이씨 주식회사 | Wafer and manufacturing method of wafer |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08216016A (en) * | 1995-02-14 | 1996-08-27 | Mitsubishi Materials Shilicon Corp | Method of polishing semiconductor wafer and polishing device |
| JPH08281551A (en) * | 1995-04-10 | 1996-10-29 | Ebara Corp | Polishing method and device for the same |
| CN1381707A (en) * | 2000-07-26 | 2002-11-27 | 日本马克西斯株式会社 | Method for measuring thickness of measured article and its device |
| KR20050070760A (en) * | 2003-12-30 | 2005-07-07 | 동부아남반도체 주식회사 | End point detection apparatus using optic system |
| CN1726116A (en) * | 2002-10-17 | 2006-01-25 | 株式会社荏原制作所 | Polishing state monitoring apparatus and polishing apparatus and method |
| JP2009130078A (en) * | 2007-11-22 | 2009-06-11 | Covalent Materials Corp | Method and device of measuring thickness of soi layer |
| CN102027315A (en) * | 2008-01-31 | 2011-04-20 | 株式会社Snu精密 | Method for measuring thickness |
| CN102341670A (en) * | 2009-03-27 | 2012-02-01 | 浜松光子学株式会社 | Film thickness measurement device and measurement method |
| CN104792272A (en) * | 2014-01-20 | 2015-07-22 | 王伟中 | Optical interference device for online real-time thickness detection |
| KR20170048810A (en) * | 2015-10-27 | 2017-05-10 | 주식회사 케이씨텍 | Chemical mechanical polishing apparatus with enhanced performance of obtaining thickness at the edge area of wafer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10112449A (en) * | 1996-10-07 | 1998-04-28 | Hitachi Ltd | Polishing method and polishing device |
| JP2004047876A (en) * | 2002-07-15 | 2004-02-12 | Tokyo Seimitsu Co Ltd | Polishing device and polishing process |
| KR100532553B1 (en) * | 2003-03-25 | 2005-12-01 | 두산디앤디 주식회사 | Method and apparatus for detecting polishing end point of semiconductor wafer |
| EP1758711B1 (en) * | 2004-06-21 | 2013-08-07 | Ebara Corporation | Polishing apparatus and polishing method |
| CN101523565B (en) * | 2006-10-06 | 2012-02-29 | 株式会社荏原制作所 | Machining end point detecting method, grinding method, and grinder |
-
2016
- 2016-10-25 CN CN201621162037.5U patent/CN207058321U/en active Active
-
2017
- 2017-05-11 KR KR1020170058505A patent/KR102368789B1/en active IP Right Grant
- 2017-06-14 CN CN201710446753.9A patent/CN108857859B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08216016A (en) * | 1995-02-14 | 1996-08-27 | Mitsubishi Materials Shilicon Corp | Method of polishing semiconductor wafer and polishing device |
| JPH08281551A (en) * | 1995-04-10 | 1996-10-29 | Ebara Corp | Polishing method and device for the same |
| CN1381707A (en) * | 2000-07-26 | 2002-11-27 | 日本马克西斯株式会社 | Method for measuring thickness of measured article and its device |
| CN1726116A (en) * | 2002-10-17 | 2006-01-25 | 株式会社荏原制作所 | Polishing state monitoring apparatus and polishing apparatus and method |
| KR20050070760A (en) * | 2003-12-30 | 2005-07-07 | 동부아남반도체 주식회사 | End point detection apparatus using optic system |
| JP2009130078A (en) * | 2007-11-22 | 2009-06-11 | Covalent Materials Corp | Method and device of measuring thickness of soi layer |
| CN102027315A (en) * | 2008-01-31 | 2011-04-20 | 株式会社Snu精密 | Method for measuring thickness |
| CN102341670A (en) * | 2009-03-27 | 2012-02-01 | 浜松光子学株式会社 | Film thickness measurement device and measurement method |
| CN104792272A (en) * | 2014-01-20 | 2015-07-22 | 王伟中 | Optical interference device for online real-time thickness detection |
| KR20170048810A (en) * | 2015-10-27 | 2017-05-10 | 주식회사 케이씨텍 | Chemical mechanical polishing apparatus with enhanced performance of obtaining thickness at the edge area of wafer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110126106A (en) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | Wafer processing method |
| CN111515864A (en) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | Monitoring method and system for diamond disk |
| CN115026715A (en) * | 2021-03-05 | 2022-09-09 | 应用材料公司 | Control of process parameters for substrate polishing with substrate precession |
| US11931853B2 (en) | 2021-03-05 | 2024-03-19 | Applied Materials, Inc. | Control of processing parameters for substrate polishing with angularly distributed zones using cost function |
| CN115026715B (en) * | 2021-03-05 | 2024-06-21 | 应用材料公司 | Polishing system, computer program product and method for generating a recipe for controlling the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN207058321U (en) | 2018-03-02 |
| CN108857859B (en) | 2020-03-10 |
| KR102368789B1 (en) | 2022-03-02 |
| KR20170127377A (en) | 2017-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108857859A (en) | The polishing control method and polishing system of chip | |
| KR102025784B1 (en) | Polishing apparatus and polishing method | |
| CN103072072B (en) | Ginding process and lapping device | |
| US8554356B2 (en) | Processing end point detection method, polishing method, and polishing apparatus | |
| KR101669554B1 (en) | Method of monitoring progress of substrate polishing and polishing apparatus | |
| KR101918803B1 (en) | Measurement of film thickness using fourier transform | |
| KR101459269B1 (en) | Chemical mechanical polishing method and apparatus using same | |
| CN205380555U (en) | Chemical mechanical polishing device | |
| KR102283692B1 (en) | Film thickness measuring method, film thickness measuring apparatus, polishing method and polishing apparatus | |
| CN109382755B (en) | Substrate polishing apparatus and method | |
| JP6470366B2 (en) | Polishing device | |
| CN109968190B (en) | Wafer grinding system | |
| CN109773647B (en) | Wafer grinding system | |
| KR102091419B1 (en) | System of polishing substrate with light transmitting layer | |
| CN209319538U (en) | Substrate board treatment | |
| KR101655070B1 (en) | Chemical mechanical polishing apparatus and method | |
| CN109719613A (en) | Substrate board treatment and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |