CN108855149A - composite photo-catalyst and preparation method thereof - Google Patents
composite photo-catalyst and preparation method thereof Download PDFInfo
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- CN108855149A CN108855149A CN201810602422.4A CN201810602422A CN108855149A CN 108855149 A CN108855149 A CN 108855149A CN 201810602422 A CN201810602422 A CN 201810602422A CN 108855149 A CN108855149 A CN 108855149A
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- 239000002131 composite material Substances 0.000 title claims abstract description 49
- 239000011941 photocatalyst Substances 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 104
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 56
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 55
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 239000011257 shell material Substances 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 44
- 229910052793 cadmium Inorganic materials 0.000 claims description 42
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 42
- 239000012792 core layer Substances 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 35
- 239000002243 precursor Substances 0.000 claims description 34
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 229910052714 tellurium Inorganic materials 0.000 claims description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 15
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 12
- 238000007781 pre-processing Methods 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 12
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- 239000011669 selenium Substances 0.000 claims description 11
- CMZQABJYGBTXFW-UHFFFAOYSA-N cadmium;tetradecanoic acid Chemical compound [Cd].CCCCCCCCCCCCCC(O)=O CMZQABJYGBTXFW-UHFFFAOYSA-N 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 claims description 6
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 6
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 6
- 238000002604 ultrasonography Methods 0.000 claims description 6
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 5
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 5
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 5
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000005642 Oleic acid Substances 0.000 claims description 5
- KJNYWDYNPPTGLP-UHFFFAOYSA-L cadmium(2+);diacetate;hydrate Chemical compound O.[Cd+2].CC([O-])=O.CC([O-])=O KJNYWDYNPPTGLP-UHFFFAOYSA-L 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 5
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 claims description 5
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 claims description 5
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 4
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- OXHNLMTVIGZXSG-UHFFFAOYSA-N 1-Methylpyrrole Chemical compound CN1C=CC=C1 OXHNLMTVIGZXSG-UHFFFAOYSA-N 0.000 claims 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims 1
- 239000003054 catalyst Substances 0.000 abstract description 16
- 239000001257 hydrogen Substances 0.000 abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 12
- 230000008033 biological extinction Effects 0.000 abstract description 10
- 230000001699 photocatalysis Effects 0.000 abstract description 10
- 150000001875 compounds Chemical class 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000007146 photocatalysis Methods 0.000 abstract description 9
- 238000006862 quantum yield reaction Methods 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 47
- 230000008569 process Effects 0.000 description 11
- 230000006798 recombination Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- -1 octadecylene Chemical group 0.000 description 9
- 239000002096 quantum dot Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000003426 co-catalyst Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 230000010748 Photoabsorption Effects 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 230000003313 weakening effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000003796 beauty Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- AUIZLSZEDUYGDE-UHFFFAOYSA-L cadmium(2+);diacetate;dihydrate Chemical compound O.O.[Cd+2].CC([O-])=O.CC([O-])=O AUIZLSZEDUYGDE-UHFFFAOYSA-L 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 235000021360 Myristic acid Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/057—Selenium or tellurium; Compounds thereof
- B01J27/0576—Tellurium; Compounds thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/396—Distribution of the active metal ingredient
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Inorganic Chemistry (AREA)
- Catalysts (AREA)
Abstract
Composite photo-catalyst and preparation method thereof belongs to photocatalysis field.Composite photo-catalyst includes MoS2Nanometer sheet and it is adsorbed in MoS2II type CdSe/CdTe Quantum Well of nanometer sheet, II type CdSe/CdTe Quantum Well include CdSe quantum piece stratum nucleare and CdTe quantum piece shell.It has the advantages that extinction is high-efficient, interface charge separative efficiency is high, interface charge compound action is weak, Photocatalyzed Hydrogen Production quantum yield is high.The preparation method of composite photo-catalyst includes that will contain MoS2The ultrasonic disperse in the second reaction solution containing II type CdSe/CdTe Quantum Well is added dropwise in first reaction solution of nanometer sheet, obtains composite photo-catalyst.Its controllability is good, at low cost, applied widely, and photochemical catalyst extinction efficiency obtained and hydrogen generation efficiency are high.
Description
Technical field
The present invention relates to photocatalysis fields, in particular to a kind of composite photo-catalyst and preparation method thereof.
Background technique
Solar energy photocatalytic produces hydrogen, as " technology of 21 century dream ", it is considered to be finally solve energy and environmental problem
One of basic method.From 1972, Fujishima and Honda were reported for the first time using since the phenomenon that Photocatalyzed Hydrogen Production, were ground
The persons of studying carefully have carried out a large amount of research around photochemical catalyst and have achieved a series of breakthrough and progress.
Common semiconductor has TiO in photochemical catalyst2、C3N4, NiS etc., and compared with the semiconductor of the quasi-tradition：Quantum
The spectrum and energy level of the low-dimensional nanocrystal (such as quantum dot, quantum rod and quantum piece quantum material) of confinement can be with its size tune
Section, and the surface due to consumingly expanding to crystal with quantum confined effect its wave function, can significantly enhance nanometer
It is brilliant with corresponding charge receptor (such as TiO2With catalyst etc.) the electronics coupled interaction of interface, to be conducive to the two
Between interface charge separation；Secondly as strong charge caused by quantum confinement-charge Coulomb interactions, nanocrystalline quantum
Material can generate two or more excitons (electron-hole pair) simultaneously by absorbing the photon of a high-energy, this
Sample can correspond to 200% even higher " photon-electron " transfer efficiency.This phenomenon becomes low-dimensional quantum material devices
It is hopeful to break through the third generation photovoltaic device of the thermodynamics Shockley-Queisser limit, therefore quantum material is in photocatalysis
Application prospect it is huge.
However, the prior art has the following problems：First is that the photoabsorption cross-section of zero-dimensional quantum dots or One-dimensional Quantum stick has
Limit, the extinction efficiency of catalyst are to be improved；Second is that quantum dot/bar material the electronic structure used is set without special before
Meter, electron population is irregular, this is resulted in：One side electronics is transferred to the limited speed in co-catalyst from quantum dot/stick, difficult
To realize efficiently separating for the two interface charge；On the other hand, the recombination process for separating the sub- point/stick of state electron vectors is unable to get
The service life of effectively control, separation state electronics is influenced by recombination process, it is difficult to meet electronics in co-catalyst long-distance diffusion
Demand.The extinction section and quantum dot/stick of above-mentioned zero-dimensional quantum dots and One-dimensional Quantum stick and co-catalyst median surface charge
The defect of process causes the photocatalysis performance of the composite catalyst to be restricted.
In view of this, special propose the application.
Summary of the invention
The purpose of the present invention is to provide a kind of composite photo-catalyst, have that extinction is high-efficient, interface charge separation effect
The advantages that rate is high, interface charge compound action is weak, Photocatalyzed Hydrogen Production quantum yield is high.
Another object of the present invention is to provide a kind of preparation method of composite photo-catalyst, controllability is good, it is at low cost,
Applied widely, photochemical catalyst extinction efficiency obtained and hydrogen generation efficiency are high.
What the embodiment of the present invention was realized in：
A kind of composite photo-catalyst comprising MoS2Nanometer sheet and it is adsorbed in MoS2II type CdSe/CdTe quantum of nanometer sheet
Trap, II type CdSe/CdTe Quantum Well include CdSe quantum piece stratum nucleare and CdTe quantum piece shell.
A kind of preparation method of composite photo-catalyst comprising MoS will be contained2First reaction solution of nanometer sheet is added dropwise in containing II
Ultrasonic disperse in second reaction solution of type CdSe/CdTe Quantum Well, obtains composite photo-catalyst.
The beneficial effect of the embodiment of the present invention is：
Composite photo-catalyst provided by the invention, firstly, the two-dimentional CdSe/CdTe Quantum Well of quantum confinement and zero dimension quantum
Point is compared with One-dimensional Quantum stick, is had bigger photoabsorption cross-section, can be significantly improved the extinction efficiency of photochemical catalyst.Its
Secondary, in the CdSe/CdTe Quantum Well of II type electronic structure, the conduction band and valence band of CdTe shell are respectively lower than the conduction band of CdSe core layer
And valence-band level：On the one hand, for the electron delocalization of CdSe/CdTe Quantum Well into CdTe shell, this makes CdSe/CdTe Quantum Well
On electronics can swimmingly be transferred to MoS2In nanometer sheet, to realize Quantum Well and MoS2The height of interface charge between nanometer sheet
Effect separation；On the other hand, MoS2The conduction level of nanometer sheet be located at CdTe quantum piece shell conduction level and valence-band level it
Between, the hole confinement of Quantum Well is inside CdSe core layer and CdTe shell is substantially without hole, this can effectively inhibit MoS2It receives
The recombination process in rice on piece separation state electronics hole in CdSe/CdTe Quantum Well, to meet separation state electronics at MoS2 nanometers
The demand of piece long-distance diffusion.The efficient interface charge separation of the CdSe/CdTe Quantum Well bring of II type electronic structure and length
Journey electrons spread can substantially improve the Photocatalyzed Hydrogen Production efficiency of photochemical catalyst.Meanwhile MoS2Nanometer sheet compares table with biggish
Area, two-dimentional MoS2Nanometer sheet edge has the proton reduction site of many high activities, and ultralow reaction overpotential is even
It can match in excellence or beauty with traditional platinum catalyst, these characteristics make based on II type CdSe/CdTe Quantum Well and MoS2Nanometer sheet it is compound
Photochemical catalyst shows excellent photocatalysis performance.
The preparation method of composite photo-catalyst provided by the invention will contain MoS2The reaction solution ultrasonic disperse of nanometer sheet is in containing
In the reaction solution of II type CdSe/CdTe Quantum Well, controllability is good, at low cost, applied widely.Composite photo-catalyst obtained
Pointedly enhance from Quantum Well to MoS2The electronics transfer of nanometer sheet, while weakening from MoS2Electronics of the nanometer sheet to Quantum Well
It is compound, significantly improve the photocatalysis performance of composite photo-catalyst.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the structural schematic diagram of composite photo-catalyst provided in an embodiment of the present invention；
Fig. 2 is the interface charge process energy diagram of composite photo-catalyst provided in an embodiment of the present invention；
Fig. 3 is the TEM figure for the CdSe/CdTe Quantum Well that the embodiment of the present invention 1 provides；
Fig. 4 is the MoS that the embodiment of the present invention 1 provides2The abosrption spectrogram of nanometer sheet；
Fig. 5 is the interface charge transmission and recombination kinetcs process light for the composite photo-catalyst that the embodiment of the present invention 1 provides
Spectrogram.
Specific embodiment
It in order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below will be in the embodiment of the present invention
Technical solution be clearly and completely described.The person that is not specified actual conditions in embodiment, according to normal conditions or manufacturer builds
The condition of view carries out.Reagents or instruments used without specified manufacturer is the conventional production that can be obtained by commercially available purchase
Product.
Composite photo-catalyst of the embodiment of the present invention and preparation method thereof is specifically described below.
Referring to Fig. 1, the present invention provides a kind of composite photo-catalyst, including MoS2Nanometer sheet and it is adsorbed in MoS2Nanometer sheet
II type CdSe/CdTe Quantum Well, II type CdSe/CdTe Quantum Well includes CdSe quantum piece stratum nucleare and CdTe quantum piece shell.
The two-dimentional CdSe/CdTe Quantum Well of quantum confinement has bigger compared with zero-dimensional quantum dots and One-dimensional Quantum stick
Photoabsorption cross-section, the extinction efficiency of photochemical catalyst can be significantly improved.
Referring to Fig. 2, the efficient interface charge separation of the CdSe/CdTe Quantum Well bring of II type electronic structure and long-range electricity
Son diffusion can substantially improve the Photocatalyzed Hydrogen Production efficiency of photochemical catalyst.Wherein, the CdSe/CdTe Quantum Well of II type electronic structure
In, the conduction level of CdTe shell is lower than CdSe core layer conduction level, and the valence-band level of CdTe shell is lower than the valence of CdSe core layer
Band energy level；MoS2The conduction level of nanometer sheet is located between the conduction level and valence-band level of CdTe quantum piece shell：
On the one hand, into CdTe shell, this makes in CdSe/CdTe Quantum Well the electron delocalization of CdSe/CdTe Quantum Well
Electronics can swimmingly be transferred to MoS2In nanometer sheet, to realize Quantum Well and MoS2Interface charge is efficient between nanometer sheet
Separation.
On the other hand, the hole confinement of Quantum Well is inside CdSe core layer and CdTe shell is substantially without hole, this can have
Effect ground inhibits MoS2The recombination process in state electronics hole in CdSe/CdTe Quantum Well is separated in nanometer sheet, to meet separation state
Electronics is in MoS2The demand of nanometer sheet long-distance diffusion.
Another part important materials are co-catalysts in composite photocatalyst.Transition metal dichalcogenide is the layer of representative
Shape two-dimensional material has many novel photoelectric properties, such as ultrahigh charge mobility, higher exciton binding energy etc..
It is single through inventor the study found that platelike molybdenumdisulfide is as the two-dimensional semiconductor material with excellent photoelectric properties
The MoS of atomic layers thick2It is the two-dimentional direct band-gap semicondictor material that forbidden bandwidth is 1.8eV, is very suitable to for Development of Novel
Nano electron device and photoelectric functional device.Simultaneously as the biggish specific surface area of stratiform MoS2, makes it have excellent light
Catalytic performance.Shape MoS2Edge have many high activities proton reduction site, ultralow reaction overpotential even can
To match in excellence or beauty with traditional platinum catalyst.In addition compared with platinum, MoS2Material source is abundant, cheap, has and realizes on a large scale
The prospect of industrial application.
In some optional embodiments of the present invention, MoS2Nanometer sheet is the single-layer or multi-layer obtained by ultrasound removing
MoS2Nanometer sheet.Further, the content of II type CdSe/CdTe Quantum Well in the composite photocatalyst is 80-95wt%, i.e., should
II type CdSe/CdTe Quantum Well accounts for MoS2The 80-95% of nanometer sheet and II type CdSe/CdTe Quantum Well gross mass.So that MoS2It receives
Rice piece has preferable two-dimensional structure, and MoS2Charge mobility between nanometer sheet and II type CdSe/CdTe Quantum Well is high, sharp
Son combines can be high.
The present invention provides a kind of preparation method of composite photo-catalyst, including：MoS will be contained2First reaction solution of nanometer sheet
The ultrasonic disperse in the second reaction solution containing II type CdSe/CdTe Quantum Well is added dropwise, obtains composite photo-catalyst.
In some specific embodiments of the present invention, the time of supersonic frequency 25KHz-130KHz, ultrasonic disperse are
1-8h, such as 1h, 2h, 3h, 4h, 5h, 6h, 7h, 8h are selectively adjusted according to actual conditions such as supersonic frequency, reaction solution concentrations.
MoS will be contained2The reaction solution ultrasonic disperse of nanometer sheet, can in the reaction solution containing II type CdSe/CdTe Quantum Well
Control property is good, at low cost, applied widely.Composite photo-catalyst obtained pointedly enhances from Quantum Well to MoS2Nanometer sheet
Electronics transfer, while weakening from MoS2The electronics of nanometer sheet to Quantum Well is compound, significantly improves the photocatalysis of composite photo-catalyst
Performance.
Through inventor the study found that in some specific embodiments of the present invention, the solvent of the first reaction solution is selected from N-
At least one of methyl pyrrolidone or acetonitrile such as can be N-Methyl pyrrolidone one, acetonitrile one or N- methyl
The combination of both pyrrolidones and acetonitrile.MoS in first reaction solution2The concentration of nanometer sheet is 10-5-10-3Mol/L such as can be
10-5mol/L、2×10-5mol/L、5×10-5mol/L、8×10-5mol/L、10-4mol/L、2×10-4mol/L、5×10- 4mol/L、8×10-4mol/L、10-3Mol/L etc..The solvent of second reaction solution is in chloroform, toluene, n-hexane or heptane
At least one, such as can be it is therein any one, both any combination, the combination of any three or four combination.
The concentration of II type CdSe/CdTe Quantum Well is 10 in second reaction solution-4-10-3Mol/L, such as 10-4mol/L、2×10-4mol/
L、5×10-4mol/L、8×10-4mol/L、10-3Mol/L etc..Make MoS2Nanometer sheet and II type CdSe/CdTe Quantum Well have stabilization
Switching performance, charge migration stablize.
Optionally, MoS2Nanometer sheet is made according to following methods：By MoS2It is scattered in ultrasound removing in N-Methyl pyrrolidone
Then solution is centrifuged 10-50min with the revolving speed of 2000-5000r/min by 4-8h.Its is easy to operate, controllability is good, obtains not
The MoS of stack pile2Nanometer sheet is conducive to improve the charge migration efficiency between II type CdSe/CdTe Quantum Well.
Further, II type CdSe/CdTe Quantum Well is made according to following methods：By containing for Quantum Well CdTe Shell Materials
Cadmium precursor liquid is mixed with the seed solution of the piece core layer material of quantum containing CdSe under heating, obtains mixed liquor；Heating temperature 190-220
Under conditions of DEG C, the precursor liquid containing tellurium that Quantum Well CdTe Shell Materials are added dropwise into mixed liquor is reacted, and obtains II type CdSe/
CdTe Quantum Well.
Seed solution is optionally made according to following methods：
Firstly, Quantum Well CdSe core layer material cadmium source and Quantum Well CdSe core layer material selenium source are dissolved in octadecylene, take out
After vacuum about 30 minutes, 1-2h is heated with 100-150 DEG C of temperature under vacuum conditions, 1h is such as heated, obtains homogeneous transparent
Preprocessing solution.
Optionally, Quantum Well CdSe core layer material cadmium source in tetradecanoic acid cadmium, cadmium oxide or cadmium acetate at least one
Kind.Quantum Well CdSe core layer material selenium source is selected from least one of selenium oxide or selenium powder.
In preprocessing solution, the concentration in Quantum Well CdSe core layer material cadmium source is 0.02-0.1mol/L.Quantum Well CdSe core
The molar ratio of layer material cadmium source and Quantum Well CdSe core layer material selenium source is 1.8-2.2:1, it is further 2:1.
Secondly, inert gas refers to the low gas of the reactivities such as nitrogen, helium, argon gas under inert gas shield
Preprocessing solution is heated to 190-220 DEG C, is such as heated to 200 DEG C by body, is rapidly added into the preprocessing solution after heating
Enter cadmium acetate hydrate, optionally adds cadmium acetate dihydrate.Then the mixed solution is warming up to 230-260 DEG C of reaction 5-
It is terminated after 30min with ice bath, obtains the reaction mixture of Quantum Well core layer material.
Optionally, the molar ratio of Quantum Well CdSe core layer material selenium source and cadmium acetate hydrate is 0.8-1.2:1, further
Ground is 1:1.
Finally, the reaction mixture of Quantum Well core layer material obtained above is centrifuged under the revolving speed of 2000-4000rpm
10-30 minutes, separation, collection obtained CdSe quantum piece core layer material.Octadecylene is dispersed by the CdSe quantum piece core layer material
In, obtain the seed solution.
In preferred embodiments of the present invention, the concentration of CdSe quantum piece core layer material is 0.06- in seed solution
0.18mmol/L。
The precursor liquid containing cadmium of Quantum Well CdTe Shell Materials is the octadecene solution in Shell Materials cadmium source and oleic acid.Wherein,
Shell Materials cadmium source includes at least one of tetradecanoic acid cadmium, cadmium oxide or cadmium acetate.Quantum Well CdTe Shell Materials contain
The concentration in Shell Materials cadmium source is 0.02-0.05mol/L in cadmium precursor liquid, is optionally 0.03mol/L.This contains in cadmium precursor liquid
The volume ratio of oleic acid and octadecylene is optionally 1:200.
Optionally, before the precursor liquid containing cadmium of Quantum Well CdTe Shell Materials is mixed with seed solution, by Quantum Well CdTe
After the precursor liquid containing cadmium of Shell Materials vacuumizes about 30min, 1-2h is heated with 100-150 DEG C of temperature under vacuum conditions, such as
Heat 1h.It is heated to about 200 DEG C later, then is rapidly added to the seed solution to this and contains in cadmium precursor liquid.Seed solution with
The volume ratio of the precursor liquid containing cadmium of Quantum Well CdTe Shell Materials is preferably 1-2:10, it is further 1:10.
The precursor liquid containing tellurium of Quantum Well CdTe Shell Materials is the octadecene solution of tellurium powder and tri octyl phosphine.Quantum Well CdTe
The concentration of tellurium powder is 0.015-0.020mol/L in the precursor liquid containing tellurium of Shell Materials, is further 0.018mol/L.This is molten
In liquid, the volume ratio of tri octyl phosphine and octadecylene is optionally about 1:12.5.
The precursor liquid containing tellurium of Quantum Well CdTe Shell Materials and the volume ratio of mixed liquor are preferably 0.4-0.7:1, into one
Step ground is 0.5:1.After mixed liquor to be heated to reaction 5-10s under conditions of 190-220 DEG C, i.e., slowly by the precursor liquid containing tellurium
It is added dropwise in the mixed liquor.
Further, the rate of addition of the precursor liquid containing tellurium of Quantum Well CdTe Shell Materials is 0.5-2mL/L, is added dropwise to complete
0.5-1.5h is reacted afterwards and is terminated with ice bath.Then use ethyl alcohol as precipitating reagent, II type CdSe/CdTe quantum can be obtained in centrifugation
Trap.
The above-mentioned preparation method of II type CdSe/CdTe Quantum Well first prepares CdSe quantum by the way of hot solvent injection
Piece stratum nucleare, then the epitaxial growth CdTe quantum piece shell outside stratum nucleare.It can be by controlling stratum nucleare and shell quantum piece respectively
It grows to regulate and control the level structure of stratum nucleare and shell respectively, to accurately, effectively regulate and control CdSe/CdTe Quantum Well and MoS2It receives
Interface charge process between rice piece.
By the control of CdSe/CdTe quantum well electronic structure, pointedly enhance from Quantum Well to MoS2Nanometer sheet
Electronics transfer, while weakening from MoS2The electronics of nanometer sheet to Quantum Well is compound, significantly improves the photocatalysis of composite photo-catalyst
Performance.
Feature and performance of the invention are described in further detail with reference to embodiments.
Embodiment 1
A kind of preparation method of composite photo-catalyst, including：
S1, tetradecanoic acid cadmium and selenium powder are dissolved in octadecylene, are vacuumized after 30min in vacuum environment with 100-150
DEG C temperature heat 1h, obtain the preprocessing solution of homogeneous transparent.Under nitrogen protection, preprocessing solution is warming up to 200 DEG C,
Cadmium acetate dihydrate is rapidly added, then heats to 230-260 DEG C, is terminated after reacting 20min at such a temperature with ice bath
Reaction.Reaction solution is centrifuged 20min under the revolving speed of 3000rpm, separates and collects to obtain CdSe quantum piece core layer material.By CdSe
Quantum piece core layer material, which is dispersed in octadecylene, obtains seed solution.Wherein, in preprocessing solution：The concentration in cadmium source is
0.05mol/L, the molar ratio in cadmium source, selenium source and cadmium acetate hydrate are 2:1:1, CdSe quantum piece core layer material in seed solution
Concentration be 0.12mmol/L.
S2, tetradecanoic acid cadmium and oleic acid are dissolved in octadecylene, obtain the precursor liquid containing cadmium of Quantum Well CdTe Shell Materials.
Tellurium powder and tri octyl phosphine are dissolved in octadecylene, the precursor liquid containing tellurium of Quantum Well CdTe Shell Materials is obtained.Wherein, Quantum Well
In the precursor liquid containing cadmium of CdTe Shell Materials, the concentration in cadmium source is 0.03mol/L, and the volume ratio of oleic acid and octadecylene is 1:200.
In the precursor liquid containing tellurium of Quantum Well CdTe Shell Materials, the concentration of tellurium source is 0.018mol/L, the body of tri octyl phosphine and octadecylene
Product is than being 1:12.5.
S3, the precursor liquid containing cadmium of Quantum Well CdTe Shell Materials obtained in S2 is vacuumized after 30min in vacuum environment
In 1h heated with 100-150 DEG C of temperature.It is warming up to after 200 DEG C and quickly adds seed solution obtained in S1, obtain mixed liquor.It will
Mixed liquor reacts 5-10s at a temperature of 190-220 DEG C, and Quantum Well obtained in S2 then is added dropwise with the speed of 0.5-2mL/L
The precursor liquid containing tellurium of CdTe Shell Materials reacts 1h and is terminated with ice bath after being added dropwise to complete.It uses ethyl alcohol as precipitating reagent, is centrifuged
To II type CdSe/CdTe Quantum Well.Wherein, the volume ratio of seed solution and the precursor liquid containing cadmium of Quantum Well CdTe Shell Materials is
1:10, the precursor liquid containing tellurium of Quantum Well CdTe Shell Materials and the volume ratio of mixed liquor are 0.5:1.
S4, by MoS2It is scattered in ultrasound removing 6h in N-Methyl pyrrolidone, then by solution with the revolving speed of 3500r/min
It is centrifuged 30min, obtains MoS2Nanometer sheet.
S5, it disperses II type CdSe/CdTe Quantum Well obtained in S3 in chloroform, is made into II type CdSe/CdTe quantum
The concentration of trap is 5 × 10-4The second reaction solution of mol/L.By MoS obtained in S42Nanometer sheet is scattered in N-Methyl pyrrolidone
In, it is configured to MoS2The concentration of nanometer sheet is 10-4The first reaction solution of mol/L.Wherein II type CdSe/CdTe Quantum Well and MoS2
The mass ratio of nanometer sheet is 9:1.
S6, the first reaction solution is added drop-wise in the second reaction solution, with the frequency ultrasound 4h of 30KHz, is obtained based on II type CdSe/
CdTe Quantum Well and MoS2The composite photo-catalyst of nanometer sheet.
Embodiment 2
A kind of preparation method of composite photo-catalyst, difference from example 1 is that：
In S5, CdSe/CdTe Quantum Well and MoS2The mass ratio of nanometer sheet is 8:2, MoS in the first reaction solution2Nanometer sheet
Concentration is 1.5 × 10-4Mol/L, the concentration of II type CdSe/CdTe Quantum Well is 2 × 10 in the second reaction solution-4mol/L。
In S6, the frequency of ultrasonic disperse is 50KHz, and the time of ultrasonic disperse is 8h.
Embodiment 3
A kind of preparation method of composite photo-catalyst, difference from example 1 is that：
In S5, II type CdSe/CdTe Quantum Well and MoS2The mass ratio of nanometer sheet is 9.5:0.5, MoS in the first reaction solution2
The concentration of nanometer sheet is 5 × 10-5Mol/L, the concentration of II type CdSe/CdTe Quantum Well is 1 × 10 in the second reaction solution-3mol/
L。
In S6, the frequency of ultrasonic disperse is 130KHz, and the time of ultrasonic disperse is 2h.
Embodiment 4
A kind of preparation method of composite photo-catalyst, difference from example 1 is that：
In S1, cadmium source is cadmium oxide, and selenium source is selenium oxide, and the concentration in cadmium source is 0.03mol/L, seed in preprocessing solution
The concentration of CdSe quantum piece core layer material is 0.15mmol/L in solution.
Embodiment 5
A kind of preparation method of composite photo-catalyst, difference from example 1 is that：
In S1, cadmium source is that molar ratio is 1:1 tetradecanoic acid cadmium and cadmium acetate, selenium source are that molar ratio is 1:1 selenium oxide
And selenium powder, the concentration in cadmium source is 0.08mol/L in preprocessing solution, and the concentration of CdSe quantum piece core layer material is in seed solution
0.08mmol/L。
Embodiment 6
A kind of preparation method of composite photo-catalyst, difference from example 1 is that：
In S2, cadmium source is that molar ratio is 1:1 cadmium oxide and cadmium acetate, the precursor liquid containing cadmium of Quantum Well CdTe Shell Materials
The concentration in middle cadmium source is 0.05mol/L.
Test example
To the interface charge transmission rate and recombination rate and Photocatalyzed Hydrogen Production of composite photo-catalyst made from embodiment 1-6
Quantum yield is tested, and the results are shown in Table 1.
1 performance test table of table
As shown in Table 1, composite photo-catalyst provided in an embodiment of the present invention, interface electron transfer rate is in several hundred skins
Second, and interface electronics recombination rate is in several to tens nano-seconds, ultrafast electron-transport and slower electronics recombination process
Its interface charge separative efficiency is resulted in up to 96% or more.The Photocatalyzed Hydrogen Production quantum yield of composite photo-catalyst is up to 7.3%-
9.3%, it is significantly higher than the sub- yield of 4% or so hydrogen output of conventional photochemical catalyst.
Fig. 3 is the TEM figure for the composite photo-catalyst that the embodiment of the present invention 1 provides, and as can be seen from FIG. 3, (a) is 4 Ge Unit points
The TEM of molecular layers thick (4ML) CdSe nanometer sheet schemes, and (b) schemes for the TEM of II type structure (Type II) CdSe/CdTe Quantum Well.
The CdSe nanometer sheet stratum nucleare of synthesis has the thickness 1.36nm of 4 monolayers, and CdTe shell is only in the transverse direction of CdSe core layer
Extend and grow, it is quantum in thickness direction that the length, width and height of the CdSe/CdTe nanometer sheet of synthesis, which are about 36nm × 14nm × 1.36nm,
Confinement, show that it belongs to typical quantum-well materials.
Fig. 4 is the MoS that the embodiment of the present invention 1 provides2The abosrption spectrogram of nanometer sheet, as can be seen from FIG. 4, stratiform MoS2Point
Occurs apparent exciton absorption peak not at 610nm and 670nm, which is the semi-conductor type MoS with 2H phase2, the 2H phase
Semi-conductor type MoS2It is particularly suitable in photocatalysis.
Fig. 5 is the interface charge recombination kinetcs process spectrogram for the composite photo-catalyst that the embodiment of the present invention 1 provides, root
According to Fig. 5 it is found that CdSe/CdTe Quantum Well and MoS2The signal of charge-separated state reaches maximum value in 1ns, later due to quantum
Positive charge and MoS on trap2The compound decline for resulting in charge-separated state signal of upper negative electrical charge.It is obtained by decline kinetic curve
The half-life compound to the two electronics is 12ns, this hundreds of times slower than the interface electron transfer rate of picosecond between the two, table
Bright II type structure C dSe/CdTe Quantum Well provided by the invention can effectively inhibit the recombination process of interface electronics.
To sum up, composite photo-catalyst provided in an embodiment of the present invention, has that extinction is high-efficient, interface charge separative efficiency
High, the advantages that interface charge compound action is weak, Photocatalyzed Hydrogen Production quantum yield is high.The preparation method controllability of composite photo-catalyst
Good, at low cost, applied widely, photochemical catalyst extinction efficiency obtained and hydrogen generation efficiency are high.
Embodiments described above is a part of the embodiment of the present invention, instead of all the embodiments.Reality of the invention
The detailed description for applying example is not intended to limit the range of claimed invention, but is merely representative of selected implementation of the invention
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
Every other embodiment, shall fall within the protection scope of the present invention.
Claims (10)
1. a kind of composite photo-catalyst, which is characterized in that including MoS2Nanometer sheet and it is adsorbed in the MoS2II type of nanometer sheet
CdSe/CdTe Quantum Well, the II type CdSe/CdTe Quantum Well include CdSe quantum piece stratum nucleare and CdTe quantum piece shell.
2. composite photo-catalyst according to claim 1, which is characterized in that the MoS2Nanometer sheet is to be removed by ultrasound
Obtained single-layer or multi-layer MoS2Nanometer sheet.
3. composite photo-catalyst according to claim 1, which is characterized in that the II type CdSe/CdTe Quantum Well is in institute
Stating the content in composite photo-catalyst is 80-95wt%.
4. a kind of preparation method of composite photo-catalyst, which is characterized in that MoS will be contained2First reaction solution of nanometer sheet is added dropwise in containing
Ultrasonic disperse in second reaction solution of II type CdSe/CdTe Quantum Well, obtains the composite photo-catalyst.
5. the preparation method according to claim 4, which is characterized in that the solvent of first reaction solution is selected from N- methyl pyrrole
At least one of pyrrolidone or acetonitrile；
And/or MoS described in first reaction solution2The concentration of nanometer sheet is 10-5-10-3mol/L。
6. the preparation method according to claim 4, which is characterized in that the solvent of second reaction solution is selected from chloroform, first
At least one of benzene, n-hexane or heptane；
And/or the concentration of II type CdSe/CdTe Quantum Well described in second reaction solution is 10-4-10-3mol/L。
7. the preparation method according to claim 4, which is characterized in that the MoS2Nanometer sheet is made according to following methods：It will
MoS2It is scattered in ultrasound removing 4-8h in N-Methyl pyrrolidone, is then centrifuged solution with the revolving speed of 2000-5000r/min
10-50min。
8. the preparation method according to claim 4, which is characterized in that the II type CdSe/CdTe Quantum Well is according to following
Method is made：By the precursor liquid containing cadmium of the Quantum Well CdTe Shell Materials seed with the piece core layer material of quantum containing CdSe under heating
Solution mixing, obtains mixed liquor；Under conditions of 190-220 DEG C of heating temperature, Quantum Well CdTe shell is added dropwise into the mixed liquor
The precursor liquid containing tellurium of material is reacted, and the II type CdSe/CdTe Quantum Well is obtained；
Optionally, before the precursor liquid containing cadmium of the Quantum Well CdTe Shell Materials is mixed with the seed solution, by the amount
The precursor liquid containing cadmium of sub- trap CdTe Shell Materials heats 1-2h under vacuum conditions with 100-150 DEG C of temperature；
Optionally, the rate of addition of the precursor liquid containing tellurium of the Quantum Well CdTe Shell Materials is 0.5-2mL/L, after being added dropwise to complete
Reaction 0.5-1.5h is simultaneously terminated with ice bath.
9. preparation method according to claim 8, which is characterized in that the seed solution is made according to following methods：It will
The octadecene solution of Quantum Well CdSe core layer material cadmium source and Quantum Well CdSe core layer material selenium source is under vacuum conditions with 100-
150 DEG C of temperature heats 1-2h, obtains preprocessing solution；Under inert gas shield, the preprocessing solution is heated to
Cadmium acetate hydrate is added after 190-220 DEG C, is terminated after being warming up to 230-260 DEG C of reaction 5-30min with ice bath, and separation product obtains
The CdSe quantum piece core layer material；Octadecylene is dispersed by the CdSe quantum piece core layer material, obtains the seed solution.
10. preparation method according to claim 9, which is characterized in that Quantum Well CdSe core layer material cadmium source is selected from
At least one of tetradecanoic acid cadmium, cadmium oxide or cadmium acetate；
And/or the Quantum Well CdSe core layer material selenium source is selected from least one of selenium oxide or selenium powder；
And/or in the preprocessing solution, the concentration in Quantum Well CdSe core layer material cadmium source is 0.02-0.1mol/L, institute
The molar ratio for stating Quantum Well CdSe core layer material cadmium source and the Quantum Well CdSe core layer material selenium source is 1.8-2.2:1, it is described
The molar ratio of Quantum Well CdSe core layer material selenium source and the cadmium acetate hydrate is 0.8-1.2:1；
And/or the concentration of CdSe quantum piece core layer material described in the seed solution is 0.06-0.18mmol/L；
And/or the precursor liquid containing cadmium of the Quantum Well CdTe Shell Materials is the octadecene solution in Shell Materials cadmium source and oleic acid,
Shell Materials cadmium source includes at least one of tetradecanoic acid cadmium, cadmium oxide or cadmium acetate, the Quantum Well CdTe shell
The concentration of Shell Materials cadmium source described in the precursor liquid containing cadmium of material is 0.02-0.05mol/L；
And/or the precursor liquid containing tellurium of the Quantum Well CdTe Shell Materials is the octadecene solution of tellurium powder and tri octyl phosphine, it is described
The concentration of tellurium powder described in the precursor liquid containing tellurium of Quantum Well CdTe Shell Materials is 0.015-0.020mol/L；
And/or the volume ratio of the precursor liquid containing cadmium of the seed solution and the Quantum Well CdTe Shell Materials is 1-2:10；
And/or the volume ratio of the precursor liquid containing tellurium of the Quantum Well CdTe Shell Materials and the mixed liquor is 0.4-0.7:1.
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