CN108832959A - Radio-frequency front-end mould group and electronic device - Google Patents
Radio-frequency front-end mould group and electronic device Download PDFInfo
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- CN108832959A CN108832959A CN201810997250.5A CN201810997250A CN108832959A CN 108832959 A CN108832959 A CN 108832959A CN 201810997250 A CN201810997250 A CN 201810997250A CN 108832959 A CN108832959 A CN 108832959A
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- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 238000004891 communication Methods 0.000 claims abstract description 19
- 238000010586 diagram Methods 0.000 description 6
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0067—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Transceivers (AREA)
Abstract
The embodiment of the present application provides a kind of radio-frequency front-end mould group and electronic device, is related to technical field of mobile terminals, wherein radio-frequency front-end mould group includes：Transmitting module, the first power amplifier, transceiver communication chip, the first main collection receiving path and the first transmission path, the first power amplifier is passed through in one end of first main collection receiving path, transmitting module is accessed with the first transmission path shared path of same frequency range, first main collection access and the first transmission path share the same pin of transmitting module, the other end access communications transceiving chip of the first main collection receiving path.The application can reduce testing cost.
Description
Technical field
This application involves technical field of mobile terminals more particularly to a kind of radio-frequency front-end mould group and electronic devices.
Background technique
With the development of mobile communication, mobile phone becomes the means of communication of manpower indispensability.The radio-frequency front-end of mobile phone be transmitting and
Receive signal part and parcel.Mobile phone can produce the mobile phone of different hardware structure, high hardware version based on different regions in production
The mobile phone of mobile phone originally and low hardware version will be tested for the property respectively due to incompatible on the hardware of radio-frequency front-end,
Test job amount is increased, cost is increased.
Summary of the invention
The embodiment of the present application provides a kind of radio-frequency front-end mould group and electronic device, can pass through change connecting path and reduce transmitting
The PIN foot of module, so that the radio-frequency front-end of high hardware version and low hardware version electronic device uses identical transmitting mould
Block reduces test job amount, to reduce cost.
On the one hand the embodiment of the present application provides a kind of radio-frequency front-end mould group, including：
Transmitting module, the first power amplifier, transceiver communication chip, the first main collection receiving path and the first transmission path；
First power amplifier is passed through in one end of the first main collection receiving path, sends with the first of same frequency range logical
Road shared path accesses the transmitting module, and the first main collection access and first transmission path share the transmitting module
The same pin；
The other end of the first main collection receiving path accesses the transceiver communication chip.
On the one hand the embodiment of the present application additionally provides a kind of electronic device, the radio-frequency front-end mould group including aforementioned offer.
The first power amplifier is passed through in one end of the various embodiments described above, the main collection receiving path of the first of RF front-end module,
Transmitting module is accessed with the first transmission path shared path of same frequency range, the first main collection access and first transmission path share
The same pin of the transmitting module, it is possible to reduce the pin number of the transmitting module can be used in RF front-end module
The transmitting module of lowest version realizes the transmitting module installed in lowest version electronic device in highest version electronic device, thus real
Now debug different editions electronic device radio-frequency performance when, do not need to be debugged respectively, reduce debugging work load, save manpower at
Sheet and time cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the radio-frequency front-end mould group that one embodiment of the application provides；
Fig. 2 is the structural schematic diagram for the radio-frequency front-end mould group that another embodiment of the application provides；
Fig. 3 is the structural schematic diagram for the radio-frequency front-end mould group that another embodiment of the application provides.
Specific embodiment
To enable present invention purpose, feature, advantage more obvious and understandable, below in conjunction with the application
Attached drawing in embodiment, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described reality
Applying example is only some embodiments of the present application, and not all embodiments.Based on the embodiment in the application, those skilled in the art
Member's every other embodiment obtained without making creative work, shall fall in the protection scope of this application.
Referring to Fig. 1, the structural schematic diagram of the radio-frequency front-end mould group provided for one embodiment of the application.The radio-frequency front-end mould
Block can be using in an electronic, which includes the mobile terminals such as mobile phone, tablet computer, wearable device.
In embodiment as shown in Figure 1, which includes：Transmitting module (TXM, transmit module) 11,
First power amplifier 12, the main collection of transceiver communication chip (transceiver) 13, first receive (PRX) access 14 and the first hair
Send (TX) access 15；
Wherein, TXM11 has multiple pins, respectively with the TX of each frequency range (transmissions), RX (reception), TRX (reception of main collection and
The common end of transmitting), one end connection of PRX (main collection receive) access, constitute each signal path, each signal path transmits respectively respectively
The corresponding signal of frequency range.Such as B2TX access, B2TRX access, RXG900 access, B40PRX access etc..More lowest version is simpler
TXM more there is less pin.B40 signal is received in B40PRX access, and B2 signal is sent in B2TX access.
The first power amplifier 12 is passed through in one end of first PRX access 14, shares with the first TX access 15 of same frequency range logical
TXM11 is accessed on road, and the same pin of TXM11 is shared with the first TX access 15.Therefore a pin of TXM11 is occupied less.The
The other end access communications transceiving chip 13 of one PRX access 14.
Wherein, refer to that the signal frequency range passed through in the first PRX access 14 and the first TX access 15 is identical with frequency range.For example,
If the first PRX access 14 is specially B38PRX access, the first TX access 15 is specially B38TX access.Due to PRX signal and TX
Signal time sharing transmissions a, so access can be shared by not interfereing with each other PRX access and TX access.
Specifically, the first power amplifier 12 is multimode multi-frequency power amplifier (MMPA, multimode multiband
power amplifie).The internal switch of one end connection multimode multi-frequency power amplifier 12 of first PRX access, with the first TX
The same of transmitting module 12 is accessed in 15 shared path of access, one end of the first PRX access and one end of the first TX access 15 jointly
A pin.Specifically, the closure of the internal switch is controlled by the processor of the electronic device, switching sends and receivees access.
When being switched to receiving path, when connecting PRX signal, the effect of the internal switch is a switch, when being switched to transmission path, is connect
When logical TX signal, MMPA plays the role of amplifying TX signal.
Further, which further includes：First filter 16；
The other end of first TX access 15 is connect with one end of first filter 16, the other end of first filter 16 and more
Mould multifrequency power amplifier 12 connects.
In the present embodiment, the first power amplifier is passed through in one end of the main collection receiving path of the first of RF front-end module, with
The first transmission path shared path with frequency range accesses transmitting module, and the first main collection access and first transmission path share should
The same pin of transmitting module, it is possible to reduce the pin number of the transmitting module can be used low in RF front-end module
The transmitting module of version realizes the transmitting module installed in lowest version electronic device in highest version electronic device, to realize
It when debugging different editions electronic device radio-frequency performance, does not need to be debugged respectively, reduces debugging work load, save human cost
And time cost.
Referring to Fig. 2, Fig. 2 is the structural schematic diagram for the radio-frequency front-end mould group that another embodiment of the application provides.Such as Fig. 2 institute
Show in embodiment, the difference is that, which further comprises with embodiment illustrated in fig. 1：Second power amplification
The main collection receiving path 22 of device 21, second and the second transmission path 23.
The first power amplifier 21 is passed through in one end of 2nd PRX access 22, shares with the 2nd TX access 23 of same frequency range logical
TXM11 is accessed on road, and the 2nd PRX access 22 and the 2nd TX access 23 share the same pin of TXM11.Therefore TXM11 is occupied less
A pin.
Wherein, refer to that the signal frequency range passed through in the 2nd PRX access 22 and the 2nd TX access 23 is identical with frequency range.For example,
If the 2nd PRX access 22 is specially B40PRX access, the 2nd TX access 23 is specially B40TX access.
The other end of 2nd PRX access 22 connect the second power amplifier 21 with the other end of the first PRX access 14 jointly
One end, the other end connection communication transceiving chip 13 of the second power amplifier 21.
Specifically, the second power amplifier 21 is low noise amplifier (LNA, Low Noise Amplifier).The
The internal switch of one end connection multimode multi-frequency power amplifier 12 of two PRX accesses 22, and 23 shared path of the 2nd TX access, the
The same pin of TXM11 is accessed in one end of two PRX accesses 22 and one end of the 2nd TX access 23 jointly.2nd PRX access 22
The other end connect one end of low noise amplifier 21, low noise power amplification jointly with the other end of the first PRX access
The other end connection communication transceiving chip 13 of device 21.
Further, which further includes：Second filter 24；
The other end of 2nd TX access is connect with one end of second filter 24, the other end and multimode of second filter 24
Multifrequency power amplifier 12 connects.
In the present embodiment, the first power is further passed through into one end of the second of RF front-end module the main collection receiving path
Amplifier accesses transmitting module, the second main collection access and second transmission with the second transmission path shared path of same frequency range
The same pin of the path sharing transmitting module, can be further reduced the pin number of the transmitting module, in radio-frequency front-end
The transmitting module of lowest version can be used in module, realize the hair installed in lowest version electronic device in highest version electronic device
Module is penetrated, to not need to be debugged respectively when realizing debugging different editions electronic device radio-frequency performance, reduces debugging efforts
Amount saves human cost and time cost.Also, the other end of the second main collection receiving path is another with the first main collection receiving path
Connection communication transceiving chip is accessed commonly through low noise amplifier in one end, reduces the first main collection receiving path and second
The filter of main collection receiving path, can further reduce the cost.
Referring to Fig. 3, the structural schematic diagram of the radio-frequency front-end mould group provided for another embodiment of the application.In Fig. 1 and Fig. 2
On the basis of illustrated embodiment, the radio-frequency front-end mould group is still further comprised in embodiment illustrated in fig. 3：
Single-pole double-throw switch (SPDT) 31, the first receiving path 32 and the first main collection receive and emit common end access 33；
One end of first RX access 32 is received with the first main collection and transmitting common end (TRX) access 33, passes through single-pole double throw
Switch 31 accesses TXM11, and the first RX access 32 and the first TRX access 33 share the same pin of TXM11.It is further reduced and accounts for
With the pin of TXM11.The other end connection communication transceiving chip 13 of first RX access.
It should be noted that the TXM of 14TRX have 14 pins, day regular signal be about 13, it usually needs use 13
A channel occupies 13 pins of TXM, and the TXM of 10TRX has 10 pins, leads to described in above-described embodiment by altogether
The pin number for occupying TXM is reduced with channel, when pin occupy it is few to the TMX for meeting other signals when, can unify use more
The TMX of lowest version.It specifically, then can be by electronics if meeting the standard of the TXM of 10TRX when signal path only needs 10 pins
The TXM of 14TRX in device replaces with the TXM of 10TRX, to reach the unification of TXM specification.
Further, which further includes：Third filter 34.
One end of first PX access 32 and the first TRX access 33, are separately connected two non-moving ends of single-pole double-throw switch (SPDT) 31,
The non-moving end of single-pole double-throw switch (SPDT) 31 connects TXM11；
One end of the other end connection third filter 34 of first PX access 32, the other end connection of third filter 34 are logical
Believe transceiving chip 13.
Specifically, in above-described embodiment, the first main receiving path that integrates is the main collection receiving path of B40, or, the main collection of B38/41 connects
Receive access.
When first PRX access 14 is B40 main collection receiving path, the 2nd PRX access 22 is the main collection receiving path of B38/41；The
When one PRX access 14 is B38/41 main collection receiving path, the 2nd PRX access 22 is the main collection receiving path of B40.In the prior art
In, the first PRX access 14 (namely the main collection receiving path of B40) does not have low noise power to put before access communications transceiving chip
Big device, by the improvement of above structure, the first PRX access 14 and the 2nd PRX access 22 share a low noise power amplifier,
The performance of the first PRX access 14 can be improved.
Further, the first RX access 32 is RX_G900 access.First TRX access 33 is B2_TRX access.
Further, the other end of B2_TRX access connects a duplexer, and duplexer has there are three pin, one of them
Pin connects B2_TRX access, another pin connects B2_TX access, and third pin connects B2_PRX access.B2_TX access
The other end access MMPA, B2_PRX access access communications transceiving chip.
In the present embodiment, one end of the first receiving path is received with the first main collection further and transmitting common end leads to
Road connects sending module by single-pole double-throw switch (SPDT), and the first receiving path is received with the first main collection and transmitting HW highway shares
The same pin can be further reduced the pin number of the transmitting module, lowest version can be used in RF front-end module
Transmitting module, realize in highest version electronic device install lowest version electronic device in transmitting module, to realize debugging
When different editions electronic device radio-frequency performance, do not need to be debugged respectively, reduce debugging work load, save human cost and when
Between cost.
The embodiment of the present application also protects a kind of electronic device, which includes such as earlier figures 1~radio frequency shown in Fig. 3
Front end module.Its correlation specifically describes, referring to the description of 1~embodiment illustrated in fig. 3 of earlier figures.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment
Point, it may refer to the associated description of other embodiments.
The above are the descriptions to radio-frequency front-end mould group and electronic device provided herein, for those skilled in the art
Member, according to the thought of the embodiment of the present application, there will be changes in the specific implementation manner and application range, to sum up, this theory
Bright book content should not be construed as the limitation to the application.
Claims (11)
1. a kind of radio-frequency front-end mould group, which is characterized in that including：
Transmitting module, the first power amplifier, transceiver communication chip, the first main collection receiving path and the first transmission path；
First power amplifier is passed through in one end of the first main collection receiving path, total with the first transmission path of same frequency range
The transmitting module is accessed with access, the first main collection access shares the same of the transmitting module with first transmission path
One pin；
The other end of the first main collection receiving path accesses the transceiver communication chip.
2. radio-frequency front-end mould group as described in claim 1, which is characterized in that the radio-frequency front-end mould group further includes：Second function
Rate amplifier, the second main collection receiving path and the second transmission path；
First power amplifier is passed through in one end of second main collection receiving path, total with second transmission path of same frequency range
The transmitting module is accessed with access, the second main collection receiving path and second transmission path share the transmitting module
The same pin；
The other end of the second main collection receiving path connect institute with the other end of the described first main collection receiving path jointly
One end of the second power amplifier is stated, the other end of second power amplifier connects the transceiver communication chip.
3. radio-frequency front-end mould group as described in claim 1, which is characterized in that the radio-frequency front-end mould group further includes：Hilted broadsword is double
Throw switch, the first receiving path and the first main collection receive and transmitting common end access；
One end of first receiving path is received with the described first main collection and transmitting common end, passes through the single-pole double-throw switch (SPDT)
The sending module is accessed, first receiving path is received and emitted with the described first main collection described in the path sharing of common end and sent out
Send the same pin of module；
The other end of first receiving path connects the transceiver communication chip.
4. radio-frequency front-end mould group as claimed in claim 2, which is characterized in that first power amplifier is multimode multi-frequency function
Rate amplifier；
One end of the first main collection receiving path connects the internal switch of the multimode multi-frequency power amplifier, with described first
Institute is accessed in transmission path shared path, one end of the first main collection receiving path and one end of first transmission path jointly
State the same pin of transmitting module；
The radio-frequency front-end mould group further includes：First filter；
The other end of first transmission path is connect with one end of the first filter, the other end of the first filter
It is connect with the multimode multi-frequency power amplifier.
5. radio-frequency front-end mould group as claimed in claim 4, which is characterized in that second power amplifier is low noise acoustical power
Amplifier；
One end of the second main collection receiving path connects the internal switch of the multimode multi-frequency power amplifier, with described second
Institute is accessed in transmission path shared path, one end of the second main collection receiving path and one end of second transmission path jointly
State the same pin of transmitting module；
The other end of the second main collection receiving path connect institute with the other end of the described first main collection receiving path jointly
One end of low noise amplifier is stated, the other end of the low noise amplifier connects the transceiver communication chip.
6. radio-frequency front-end mould group as claimed in claim 5, which is characterized in that the radio-frequency front-end mould group further includes：Second filter
Wave device；
The other end of second transmission path is connect with one end of the second filter, the other end of the second filter
It is connect with the multimode multi-frequency power amplifier.
7. radio-frequency front-end mould group as claimed in claim 3, which is characterized in that the radio-frequency front-end mould group further includes：Third filter
Wave device；
One end of first receiving path is received with the described first main collection and transmitting common end access, is separately connected the hilted broadsword
The non-moving end of two non-moving ends of commutator, the single-pole double-throw switch (SPDT) connects the sending module；
The other end of first receiving path connects one end of the third filter, and the other end of the third filter connects
Connect the transceiver communication chip.
8. radio-frequency front-end mould group as described in claim 1, which is characterized in that the described first main receiving path that integrates is the main collection of B40
Receiving path, or, the main collection receiving path of B38/41.
9. radio-frequency front-end mould group as claimed in claim 8, which is characterized in that the described first main receiving path that integrates is the main collection of B40
When receiving path, the described second main receiving path that integrates is the main collection receiving path of B38/41；
Described first is main when integrating main as the B38/41 collection receiving path of receiving path, and the described second main receiving path that integrates is the main collection of B40
Receiving path.
10. radio-frequency front-end mould group as claimed in claim 9, which is characterized in that first receiving path is that G900 reception is logical
Road.
11. a kind of electronic device, which is characterized in that including radio-frequency front-end mould group as described in any one of claim 1 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810997250.5A CN108832959B (en) | 2018-08-29 | 2018-08-29 | Radio frequency front end module and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810997250.5A CN108832959B (en) | 2018-08-29 | 2018-08-29 | Radio frequency front end module and electronic device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115333562A (en) * | 2022-07-06 | 2022-11-11 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency front-end chip and radio frequency front-end module |
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