CN108831856A - The filling equipment and fill method of isolated groove - Google Patents
The filling equipment and fill method of isolated groove Download PDFInfo
- Publication number
- CN108831856A CN108831856A CN201810643957.6A CN201810643957A CN108831856A CN 108831856 A CN108831856 A CN 108831856A CN 201810643957 A CN201810643957 A CN 201810643957A CN 108831856 A CN108831856 A CN 108831856A
- Authority
- CN
- China
- Prior art keywords
- isolated groove
- wafer
- filling equipment
- equipment
- ozone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Element Separation (AREA)
Abstract
The present invention discloses a kind of filling equipment of isolated groove, including：Equipment air intake is set to filling equipment for inputting the side of wafer, for being passed through oxygen-containing gas into filling equipment；Chemical filter is set to the equipment air intake, for filtering the foreign gas in the oxygen-containing gas, to provide ozone barrier environment, wherein the foreign gas includes ozone；And equipment gas outlet, the filling equipment is set to for exporting the side of the wafer, and the exhaust gas for will generate in the filling equipment is discharged, and the filling equipment is filled the isolated groove of the wafer in ozone barrier environment.The cavity even being eliminated in isolated groove is effectively reduced, filling number is reduced, reduces cost.Invention additionally discloses a kind of fill methods of isolated groove.
Description
Technical field
The invention belongs to manufacture of semiconductor technical fields, are specifically related to a kind of filling equipment of isolated groove, can be specific
It is used in a kind of fill method of isolated groove.
Background technique
With the densification and miniaturization of IC device, shallow trench isolation is all made of between active area of semiconductor device
(shallow trench isolation, STI) structure is isolated and is insulated.The formation of STI isolation structure is first in substrate
Surface forms cushion oxide layer (pad oxide) and silicon nitride layer, then etches nitrogen silicon, cushion oxide layer and substrate and forms ditch
Slot；Then cushion oxide layer is formed in trenched side-wall and bottom, recycles chemical vapor deposition (CVD) to insert in shallow trench exhausted
Edge medium, such as silica, achieve the purpose that isolation, it is possible to reduce interelectrode leakage current bears bigger breakdown voltage.?
It inserts after dielectric, makes flute surfaces using the megohmite insulant that the method for chemical mechanical grinding (CMP) grinds above-mentioned filling
Planarization.
However, after device feature size enters tens nanometers and following process node, the depth-to-width ratio of isolated groove
(Aspect Rate) usually increases.The groove of high-aspect-ratio is held in isolated groove in the processing procedure of filling dielectric
Cavity is easily formed, causes the isolation effect between conducting wire poor, conducting wire leakage current increases, and breakdown voltage increases.
It is in the prior art usually alternately deposit-etching-in plasma reaction room in order to avoid the formation in cavity
The processing step deposited again is filled groove, however, this fill method processing step is cumbersome, deposition leads to cost twice
Increase.Therefore, the cavity in isolated groove how is effectively reduced, reduces filling step, reducing cost is those skilled in the art
Member is badly in need of technical problems to be solved.
Disclosed above- mentioned information are only used for reinforcing the understanding to background of the invention in the background technology, therefore it may be wrapped
Containing the information for not being formed as the prior art that those of ordinary skill in the art are known.
Summary of the invention
In view of this, the embodiment of the present application is desirable to provide the filling equipment and fill method of a kind of isolated groove, at least
Solve problems of the prior art.
The technical solution of the embodiment of the present application is achieved in that one embodiment according to the application, provide it is a kind of every
Filling equipment from groove, including：
Equipment air intake is set to the filling equipment for inputting the side of wafer, for into the filling equipment
It is passed through oxygen-containing gas；
Chemical filter is set to the equipment air intake, for filtering the foreign gas in the oxygen-containing gas, to mention
Environment is obstructed for ozone, wherein the foreign gas includes ozone；And
Equipment gas outlet is set to the filling equipment for exporting the side of the wafer, for setting the filling
The exhaust gas of standby middle generation is discharged；
Wherein, the filling equipment is filled the isolated groove of the wafer in ozone barrier environment.
Preferably, in the filling equipment of above-mentioned isolated groove, the filling equipment includes：
Spin coating units are set in the filling equipment, form dielectric predecessor to the wafer table for spin coating
Face, to fill the isolated groove of the wafer；
Baking out unit is set in the filling equipment and connect with the spin coating units, after to spin coating
The wafer is toasted.
Preferably, in the filling equipment of above-mentioned isolated groove, the filling equipment further includes：
Annealing cooling unit is set in the filling equipment and connect with the Baking out unit, in oxygen
It anneals under environment to the wafer after baking.
Preferably, in the filling equipment of above-mentioned isolated groove, the spin coating units, the Baking out unit and described
Annealing cooling unit group is built up in a medium rotary coating device, and the chemical filter includes ozone removal device, described
Medium rotary coating device provides the ozone via the chemical filter and obstructs environment.
Preferably, in the filling equipment of above-mentioned isolated groove, the medium rotary coating device further includes：
One precools unit, is set in the filling equipment and connect with the spin coating units, with to the wafer into
It is precooled before row spin coating.
Preferably, in the filling equipment of above-mentioned isolated groove, the medium rotary coating device further includes for transmitting
The supply unit of the wafer is located in ozone barrier environment.
Preferably, in the filling equipment of above-mentioned isolated groove, the supply unit be sequentially connected with the precooling unit,
The spin coating units, the Baking out unit and the annealing cooling unit.
Preferably, in the filling equipment of above-mentioned isolated groove, the filling equipment is in the equipment air intake and described
Gas flow between equipment gas outlet passes through the supply unit.
Preferably, in the filling equipment of above-mentioned isolated groove, between the equipment air intake and the equipment gas outlet
Gas flow direction and the supply unit wafer conveying direction be the same direction.
The present invention also provides a kind of fill methods of isolated groove, which is characterized in that the method is applied to any of the above-described
The filling equipment of isolated groove described in, the method includes：
It is passed through oxygen-containing gas at the equipment air intake, is filtered in the oxygen-containing gas via the chemical filter
Foreign gas, to provide the ozone barrier environment, wherein the foreign gas includes ozone；
The isolated groove of the wafer is filled in ozone barrier environment；
The exhaust gas generated in the filling equipment is discharged from the equipment gas outlet.
Preferably, in the fill method of isolated groove described above, to the crystalline substance in ozone barrier environment
Round isolated groove is filled, including：
One medium rotary coating device is provided；
Loading a surface etch has the wafer of the isolated groove in the medium rotary coating device；
In the medium rotary coating device, spin coating mode forms dielectric predecessor in the crystal column surface, with
Fill the isolated groove；And
In the medium rotary coating device, baking annealing is carried out to the wafer after spin coating, by the insulation
Medium predecessor is transformed into dielectric through oxidation reaction under oxygen atmosphere；
Wherein, in aforementioned spin coating forming process and aforementioned baking annealing process, the medium rotary coating device is provided
The ozone obstructs environment, so that the dielectric fills up the isolated groove and its leaving no air bubbles inside generates, and described
The transfer efficiency of dielectric predecessor in the isolation trench is 90% or more.
Preferably, in the fill method of isolated groove described above, the ozone concentration model of the ozone barrier environment
It encloses for 0~10ug/L, including endpoint value.
Preferably, in the fill method of isolated groove described above, the dielectric predecessor includes poly- silicon nitrogen
Alkane solution.
Preferably, it in the fill method of isolated groove described above, before aforementioned spin coating forming process, also wraps
It includes：
The wafer is cooled to 20 DEG C~25 DEG C, including endpoint value.
Preferably, in the fill method of isolated groove described above, in aforementioned baking annealing process, after baking
The wafer is cooled to 20 DEG C~25 DEG C, including endpoint value.
Preferably, in the fill method of isolated groove described above, the depth-to-width ratio range of the isolated groove is 5~
20, including endpoint value.
The present invention due to using the technology described above, has the following advantages that：In the present solution, in order to by dielectric forerunner
Solvent evaporation in object, carries out baking annealing to the wafer for being filled with dielectric in isolated groove, finds, drying after testing
In roasting annealing process, since the impurity ozone in environment is actively reacted with dielectric predecessor, accelerate in isolating trenches groove top
Portion forms dielectric, and the dielectric predecessor of isolated groove bottom reacts generation insulation completely not with oxygen and is situated between instead
Therefore matter forms more cavity in isolated groove, therefore, this programme will be in environment during toasting annealing
The filtering of impurity ozone, effectively reduces the cavity even being eliminated in isolated groove, meanwhile, compared with the prior art, reduce filling
Number reduces processing step, reduces costs.
Above-mentioned general introduction is merely to illustrate that the purpose of book, it is not intended to be limited in any way.Except foregoing description
Schematical aspect, except embodiment and feature, by reference to attached drawing and the following detailed description, the present invention is further
Aspect, embodiment and feature, which will be, to be readily apparent that.
Detailed description of the invention
In the accompanying drawings, unless specified otherwise herein, otherwise indicate the same or similar through the identical appended drawing reference of multiple attached drawings
Component or element.What these attached drawings were not necessarily to scale.It should be understood that these attached drawings depict only according to the present invention
Disclosed some embodiments, and should not serve to limit the scope of the present invention.
Fig. 1 is a kind of fill method flow chart of isolated groove provided in an embodiment of the present invention.
Fig. 2 is the side view for the wafer that a kind of surface etch provided in an embodiment of the present invention has isolated groove.
Fig. 3 is the top view for the wafer that a kind of surface etch provided in an embodiment of the present invention has isolated groove.
Fig. 4 is a kind of top view of the wafer after spin coating dielectric predecessor provided in an embodiment of the present invention.
Fig. 5 is a kind of top view of the wafer after heated baking provided in an embodiment of the present invention.
Fig. 6 is a kind of filling equipment structural schematic diagram of isolated groove provided in an embodiment of the present invention.
Fig. 7 is a kind of spin coating units schematic diagram of internal structure provided in an embodiment of the present invention.
Fig. 8 is a kind of Baking out unit schematic diagram of internal structure provided in an embodiment of the present invention.
Fig. 9 is a kind of interstitital texture schematic diagram of isolated groove provided in an embodiment of the present invention.
Drawing reference numeral
01:Spin coating units 02:Baking out unit 03:Annealing cooling unit 04:Supply unit
05:Chemical filter 06:Precool unit 10:Medium Xuan turns Tu Bu Installed and sets
11:Silicon substrate 12:Isolated groove 13:Dielectric liner
14:Dielectric predecessor 16:Dielectric 17:Active area
21:Spin coater 22:Spin coating units air inlet 23:Spin coating units gas outlet 24:Liquid-drop machine
31:Wafer-baking platform 32:Baking out unit air inlet 33:Baking out unit gas outlet
51:Equipment air intake 52:Equipment gas outlet
Specific embodiment
Hereinafter, certain exemplary embodiments are simply just described.As one skilled in the art will recognize that
Like that, without departing from the spirit or scope of the present invention, described embodiment can be modified by various different modes.
Therefore, attached drawing and description are considered essentially illustrative rather than restrictive.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width
Degree ", " thickness ", " go up ", " under ", " preceding ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " bottom ", " interior ", " outside ", "
Clockwise ", " counterclockwise " wait the orientation or positional relationship of instructions to be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second " are only
For descriptive purposes, it is not understood to indicate or imply relative importance or implicitly indicates the number of indicated technical characteristic
Amount." first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more spy
Sign.In the description of the present invention, " multiple " are meant that two or more, unless otherwise specifically defined.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected:It can
To be mechanical connection, it is also possible to be electrically connected or can mutually communicate；It can be directly connected, it can also be by between intermediary
It connects connected, can be the connection inside two elements or the interaction relationship of two elements.For the ordinary skill of this field
For personnel, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature its " upper " or it " under "
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " include first spy
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and it is " following " including fisrt feature right above second feature and oblique upper, or be merely representative of
First feature horizontal height is less than second feature.
Following disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
In a specific embodiment, as shown in Figure 1, providing a kind of fill method of isolated groove, in conjunction with Fig. 2,3,4,5
And 6 pairs of fill methods are illustrated, including：
Step S1：One medium rotary coating device 10 is provided.
Step S2：Loading a surface etch has the wafer of isolated groove 12 in medium rotary coating device 10.
Wherein, as shown in Figures 2 and 3, silicon substrate 11 is etched, isolated groove 12 is formed；In the wafer with silicon substrate 11
Dielectric liner 13 is formed in upper surface and the isolated groove 12, specific material can be silica (SiO2), silicon oxynitride
(SiON) or combinations of the above.It should be noted that etching to form at least one isolated groove 12, isolated groove in crystal column surface
12 quantity is simultaneously not specifically limited, and is adaptively adjusted according to demand.The isolated groove 12 can be used for defining and separating
The upper surface of the silicon substrate 11 is multiple active areas 17.
Step S3：In medium rotary coating device 10, spin coating mode forms dielectric predecessor 14 in crystal column surface,
To fill isolated groove.
Wherein, under normal circumstances, dielectric predecessor 14 includes polysilazane solution etc., in entire filling process,
It is to be carried out under oxygen atmosphere, is quickly rotated as shown in figure 4, dripping dielectric predecessor 14 in crystal column surface in horizontal plane
Crystal column surface so that the uniform filling isolated groove 12 of dielectric predecessor 14, until isolated groove 12 is by dielectric
Predecessor 14 fills up.Refer to the prior art for specific spin coating proceeding, and details are not described herein.
Step S3：In medium rotary coating device, baking annealing is carried out to the wafer after spin coating, before dielectric
It drives object 14 and is transformed into dielectric 16 through oxidation reaction, wherein in aforementioned spin coating forming process and aforementioned baking annealing process
In, medium rotary coating device 10 provides ozone and obstructs (O3Free) environment so that dielectric 16 fill up isolated groove 12 and
Its leaving no air bubbles inside generates, and transfer efficiency of the dielectric predecessor 14 in isolated groove 12 is 90% or more.
Wherein, as shown in figure 5, dielectric predecessor 14 is oxidized, i.e., after the wafer after spin coating carries out baking annealing
Polysilazane in isolated groove 12 reacts the dielectric 16 for generating and combining closely with wafer with oxygen, and dielectric 16 can be
Silica, reaction equation are as follows：
However, it is generally doped with foreign gas, such as ozone under oxygen atmosphere, it is miscellaneous when carrying out baking annealing to wafer
Matter ozone is actively reacted with dielectric predecessor 14, accelerates the formation dielectric 16 such as titanium dioxide at the top of isolated groove 12
Silicon, cause the dielectric predecessor 14 of 12 bottom of isolated groove not with oxygen completely react generate dielectric 16, every
It is empty from being formed in groove 12.It therefore, will be with dielectric predecessor 14 in medium rotary coating device 10 in present embodiment
After the filtering of the foreign gases such as the ozone more easily reacted, the cavity even being eliminated in isolated groove 12 is effectively reduced, is formed
Structure as shown in Figure 4, meanwhile, compared with the prior art, does not need to fill twice, reduce filling number, reduce technique
Step reduces costs.
On the basis of the fill method of above-mentioned isolated groove 12, ozone obstruct environment ozone concentration range be 0~
10ug/L, including endpoint value；Dielectric predecessor 14 includes polysilazane solution.
Wherein, by constantly testing, ozone concentration range has been obtained at 0~10ppb (including endpoint value), baking annealing
The cavity of isolated groove 12 significantly reduces in the wafer obtained later, and ozone concentration is smaller, and the probability that cavity generates is smaller.It needs
Illustrate, ozone concentration range includes but is not limited to above range, according to equipment situation is adjusted in adaptation range,
In protection scope.
Polysilazane is in molecular backbone using silazine link as the inorganic polymer of repetitive unit, after baking, polysilazane
It is reacted with oxygen, is converted to Si-O key from Si-N key, generate silica, the polysilazane in isolated groove 12 is reacted with oxygen
16 silica of dielectric of generation is combined closely with wafer.It should be noted that dielectric predecessor 14 includes but not
It is limited to polysilazane solution, can also is the substance that can react generation silica with oxygen of other types, protect
In range.
On the basis of the fill method of above-mentioned isolated groove 12, before aforementioned spin coating forming process, further include：
Wafer is cooled to 20 DEG C~25 DEG C, including endpoint value.
Wherein, before spin coating dielectric, wafer is cooled in the preference temperature scope of spin coating, so that dielectric
16 can preferably fill isolated groove 12, meanwhile, guarantee at a suitable temperature, dielectric predecessor 14 and oxygen occur
Reaction generates the dielectrics 16 such as silica.It should be noted that the temperature of wafer cooling includes but is not limited to above range,
The adjustment that adaptability is carried out according to the specific works environment of medium rotary coating device 10, in protection scope.
The wafer on the basis of fill method of above-mentioned isolated groove 12, in aforementioned baking annealing process, after baking
It is cooled to 20 DEG C~25 DEG C, including endpoint value.
Wherein, the wafer after baking is cooled in preference temperature scope, preferably 20 DEG C~25 DEG C, so that before dielectric
It drives the dielectric 16 that object 14 reacts with oxygen to form to condense as early as possible, so that the dielectric 16 in isolated groove 12 and crystalline substance
The closer combination of circle.It should be noted that the temperature of wafer cooling includes but is not limited to above range, is rotated and applied according to medium
The specific works environment of cloth apparatus 10 carries out the adjustment of adaptability, in protection scope.
On the basis of the fill method of above-mentioned isolated groove 12, the depth-to-width ratio range of isolated groove 12 is 5~20, including
Endpoint value.
Wherein, due to the diversity of silicon integrated circuit design, the requirement that isolated groove 12 is isolated also has many variations,
It is mainly manifested in the depth of isolated groove 12, the depth bounds of isolated groove 12 are about 150nm~500nm, isolated groove
12 depth-to-width ratio includes but is not limited to range 5nm~20nm, and the angle of side wall is also one of consideration, the angular range of usual side wall
It is 80 °~90 °, the shape of side wall is also different, is not specifically limited, and according to the design needs, is adaptively adjusted,
In protection scope.
The present invention also provides a kind of filling equipments of isolated groove, as shown in fig. 6, including：
Spin coating units 01 form dielectric predecessor 14 to crystal column surface, to fill the isolating trenches of wafer for spin coating
Slot 12；
Baking out unit 02 is connect with spin coating units 01, for toasting to the wafer after spin coating；
Annealing cooling unit 03, connect, for annealing to the wafer after baking with Baking out unit 02；
Chemical filter 05 is at least connect with Baking out unit 02, for removing the impurity in Baking out unit 02
Gas；
Wherein, 03 group of cooling unit of spin coating units 01, Baking out unit 02 and annealing are built up in a medium rotary coating
In device 10, chemical filter 05 includes ozone removal device, and medium rotary coating device 10 is provided via chemical filter 05
Ozone obstructs (O3Free) environment.
As shown in fig. 7, being provided with spin coater 21 in spin coating units 01, the central location of spin coater 21 is used to install wafer,
It is provided in the surface of spin coater 21 for dielectric predecessor 14 to be vertically dropped in high-speed rotating crystal column surface
Liquid-drop machine 24, until dielectric predecessor 14 fills up isolated groove 12；As shown in figure 8, being provided in Baking out unit 02
Baking time and baking temperature are arranged in wafer-baking platform 31, wafer is placed in wafer-baking platform 31 for wafer-baking platform 31
Surface carries out Baking out.
Find after testing, be mainly in the present embodiment, in oxygen atmosphere ozone and dielectric predecessor 14 such as
The reaction of polysilazane solution is more positive, leads to generation empty in isolated groove 12, and therefore, chemical filter 05 is mainly gone
Except ozone.Through overtesting, ozone concentration range is 0~10ppb, including endpoint value, empty generation are minimum, it might even be possible to be eliminated
The generation in cavity.It is, of course, also possible to which chemical filter 05, which is arranged, filters other active respondings with dielectric predecessor 14
Foreign gas may have different foreign gas mainly to have an impact to cavity according to different dielectrics, therefore, chemistry
Filter 05 is not only used to remove ozone, can also remove other foreign gases, be adjusted according to the actual situation.
Wafer after Baking out is cooled to preference temperature by the annealing cooling unit 03 connecting with Baking out unit 02
In range, preferably 20 DEG C~25 DEG C, including endpoint value.So that dielectric predecessor 14 react with oxygen to form it is exhausted
Edge medium 16 condenses as early as possible, so that the combination that the silica and wafer in isolated groove 12 are closer.
Further, in the filling equipment of above-mentioned isolated groove, the medium rotary coating device further includes：
One precool unit 06, connect with spin coating units 01, with to wafer progress spin coating before precool.
Wherein, it precools unit 06 to use before spin coating dielectric predecessor 14, wafer is cooled to the suitable of spin coating
In suitable temperature range, dielectric predecessor 14 is enabled preferably to fill isolated groove 12.
Further, in the filling equipment of above-mentioned isolated groove, medium rotary coating device 10 further includes for transmitting
The supply unit 04 of wafer is located in ozone barrier environment.
Wherein, supply unit 04 can transport wafers in equipment, and preparation passes through supply unit 04 for wafer after completing
It is delivered to except equipment.
Further, in the filling equipment of above-mentioned isolated groove, supply unit 04, which is sequentially connected with, precools unit 06, rotation
Apply unit 01, Baking out unit 02 and annealing cooling unit 03.
Wherein, supply unit 04 can between spin coating units 01 and Baking out unit 02, Baking out unit 02 with
Between annealing cooling unit 03, and precools and wafer is conveyed between unit 06 and spin coating units 01.
Further, in the filling equipment of above-mentioned isolated groove, chemical filter 05 is additionally coupled to 01 He of spin coating units
One of annealing cooling unit 03.
Wherein, there are many embodiments for the setting position of chemical filter 05, enumerate several specific embodiments and carry out
Explanation.
Embodiment one：As shown in fig. 6, only one equipment air intake 51 of the filling equipment of isolated groove 12 and one set
Standby gas outlet 52, equipment air intake 51 are set to the side that spin coating units 01 are used to input wafer, and for being passed through oxygen, equipment goes out
Port 52 is set to the side that Baking out unit 02 is used to export wafer, is discharged for the gas after reacting, then chemistry
Filter 05 may be disposed at equipment air intake 51, for filtering the foreign gases such as the ozone in conveying oxygen, guarantee entire system
Standby process is carried out under pure oxygen environment, and generation empty in isolated groove 12 is reduced.
Embodiment two：As shown in figure 8, due to be toasted under oxygen atmosphere after spin coating dielectric predecessor 14
Heating, and carry out after cooling down annealing, dielectric predecessor 14 and oxygen reaction generate 16 silica of dielectric, because
This, can open up Baking out unit air inlet 32 in the side for inputting the wafer after spin coating of Baking out unit 02,
Baking out unit gas outlet 33 is opened up for exporting the side of the wafer after Baking out, then chemical filter 05 is arranged
At Baking out unit air inlet 32, for filtering the foreign gases such as ozone in conveying oxygen, guarantee preparation flow be
It is carried out under pure oxygen environment, reduces generation empty in isolated groove 12.Meanwhile it on the basis of the above can also be single in cooling annealing
Chemical filter 05 is set at the air inlet of member 03, further removes the foreign gases such as ozone, reduces cavity in isolated groove 12
Generation.
Embodiment three：On the basis of chemical filter 05 is set to Baking out unit 02, chemical filter 05 also with
Spin coating units 01 precool the connection of unit 06.As shown in fig. 7, spin coating units 01 include spin coating units air inlet 22 and spin coating
Chemical filter 05 can be arranged in unit gas outlet 23 at spin coating units air inlet 21, guarantee oxygen in input Baking out list
The foreign gases such as ozone are removed before member 02, guarantee oxygen before inputting Baking out unit 02 by foreign gases such as ozone
It while removal, avoids in subsequent cooling procedure, the complete dielectric of unreacted is reacted with foreign gases such as ozone, in turn
Generate cavity.Similarly, chemical filter 05 can also be set at the air inlet for precooling unit 06, in protection scope.
In conjunction with the filling equipment of isolated groove 12, the fill method of isolated groove 12 is illustrated：First in isolating trenches
Oxygen is passed through by chemical filter 05 at the equipment air intake 51 of the filling equipment of slot 12, so that whole equipment is in purity oxygen
In environment, by supply unit 04 by the wafer that surface etch has isolated groove 12 be delivered to precool unit 06 in carry out it is cold
But, cooling that progress polysilazane solution spin coating in spin coating units 01 is transported wafers to by supply unit 04 later, until poly-
Silazane solution is filled up completely after isolated groove 12, is transported wafers in Baking out unit 02 by supply unit 04,
Acid extraction is adjusted, Baking out is carried out to wafer, after Baking out, is conveyed wafer by supply unit 04
Into annealing cooling unit 03, wafer is cooled down under preset cooling time and cooling temperature, it is single finally by conveying
Member 04 exports the wafer of dielectric filling isolated groove from outlet, and the exhaust gas of generation is discharged from equipment gas outlet 52.
The invention also discloses a kind of interstitital textures of isolated groove, as shown in figure 9, including：
Surface etch has the wafer of isolated groove 12；And
Dielectric 16 fills isolated groove 12, and dielectric 16 is in a manner of spin coating by being formed in the insulation of crystal column surface
Medium predecessor 14 is transformed into through oxidation reaction；
Wherein, dielectric 16 fills up the isolated groove 12 and its leaving no air bubbles inside generates, and dielectric forerunner
Transfer efficiency of the object 14 in isolated groove 12 is 90% or more.
Further, in the interstitital texture of above-mentioned isolated groove, dielectric 16 includes silica, is remained in described
Dielectric predecessor 14 in isolated groove 12 includes polysilazane.
Further, in the interstitital texture of above-mentioned isolated groove, the depth-to-width ratio range of isolated groove 12 is 5~20, packet
Include endpoint value.
Further, in the interstitital texture of above-mentioned isolated groove, the surface that isolated groove 12 defines wafer includes multiple
Active area 17.
Further, in the interstitital texture of above-mentioned isolated groove, further include dielectric liner 13, be formed in isolated groove 12
It is interior, for connecting dielectric 16.
Further, in the interstitital texture of above-mentioned isolated groove, dielectric predecessor 14 is in isolated groove 12
Transfer efficiency is between 95%~99.9%.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in its various change or replacement,
These should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the guarantor of the claim
It protects subject to range.
Claims (16)
1. a kind of filling equipment of isolated groove, which is characterized in that including：
Equipment air intake is set to the filling equipment for inputting the side of wafer, for being passed through into the filling equipment
Oxygen-containing gas；
Chemical filter is set to the equipment air intake, smelly to provide for filtering the foreign gas in the oxygen-containing gas
Oxygen obstructs environment, wherein the foreign gas includes ozone；And
Equipment gas outlet is set to the filling equipment for exporting the side of the wafer, and being used for will be in the filling equipment
The exhaust gas of generation is discharged；
Wherein, the filling equipment is filled the isolated groove of the wafer in ozone barrier environment.
2. the filling equipment of isolated groove as described in claim 1, which is characterized in that the filling equipment includes：
Spin coating units are set in the filling equipment, form dielectric predecessor to the crystal column surface for spin coating, with
Fill the isolated groove of the wafer；
Baking out unit is set in the filling equipment and connect with the spin coating units, for described in after spin coating
Wafer is toasted.
3. the filling equipment of isolated groove as claimed in claim 2, which is characterized in that the filling equipment further includes：
Annealing cooling unit is set in the filling equipment and connect with the Baking out unit, in oxygen atmosphere
Under anneal to the wafer after baking.
4. the filling equipment of isolated groove as claimed in claim 3, which is characterized in that the spin coating units, the baking add
Hot cell and the annealing cooling unit group are built up in a medium rotary coating device, and the chemical filter includes that ozone is gone
Except device, the medium rotary coating device provides the ozone via the chemical filter and obstructs environment.
5. the filling equipment of isolated groove as claimed in claim 4, which is characterized in that the medium rotary coating device also wraps
It includes：
One precools unit, is set in the filling equipment and connect with the spin coating units, to revolve to the wafer
It is precooled before applying.
6. the filling equipment of isolated groove as claimed in claim 5, which is characterized in that the medium rotary coating device also wraps
The supply unit for transmitting the wafer is included, is located in ozone barrier environment.
7. the filling equipment of isolated groove as claimed in claim 6, which is characterized in that the supply unit is sequentially connected with described
Precool unit, the spin coating units, the Baking out unit and the annealing cooling unit.
8. the filling equipment of isolated groove as claimed in claim 6, which is characterized in that the filling equipment enters in the equipment
Gas flow between port and the equipment gas outlet passes through the supply unit.
9. the filling equipment of isolated groove as claimed in claim 8, which is characterized in that the equipment air intake and the equipment
The wafer conveying direction in gas flow direction and the supply unit between gas outlet is the same direction.
10. a kind of fill method of isolated groove, which is characterized in that the method is applied to isolating trenches described in claim 1
The filling equipment of slot, the method includes：
It is passed through oxygen-containing gas at the equipment air intake, filters the impurity in the oxygen-containing gas via the chemical filter
Gas, to provide the ozone barrier environment, wherein the foreign gas includes ozone；
The isolated groove of the wafer is filled in ozone barrier environment；
The exhaust gas generated in the filling equipment is discharged from the equipment gas outlet.
11. the fill method of isolated groove as claimed in claim 10, which is characterized in that right in ozone barrier environment
The isolated groove of the wafer is filled, including：
One medium rotary coating device is provided；
Loading a surface etch has the wafer of the isolated groove in the medium rotary coating device；
In the medium rotary coating device, spin coating mode forms dielectric predecessor in the crystal column surface, with filling
The isolated groove；And
In the medium rotary coating device, baking annealing is carried out to the wafer after spin coating, by the dielectric
Predecessor is transformed into dielectric through oxidation reaction under oxygen atmosphere；
Wherein, in aforementioned spin coating forming process and aforementioned baking annealing process, described in the medium rotary coating device offer
Ozone obstructs environment, so that the dielectric fills up the isolated groove and its leaving no air bubbles inside generates, and the insulation
The transfer efficiency of medium predecessor in the isolation trench is 90% or more.
12. the fill method of isolated groove as claimed in claim 10, which is characterized in that the ozone of the ozone barrier environment
Concentration range is 0~10ug/L, including endpoint value.
13. the fill method of isolated groove as claimed in claim 11, which is characterized in that the dielectric predecessor includes
Polysilazane solution.
14. the fill method of isolated groove as claimed in claim 11, which is characterized in that aforementioned spin coating forming process it
Before, further include：
The wafer is cooled to 20 DEG C~25 DEG C, including endpoint value.
15. the fill method of isolated groove as claimed in claim 11, which is characterized in that in aforementioned baking annealing process,
The wafer after baking is cooled to 20 DEG C~25 DEG C, including endpoint value.
16. such as the fill method of the described in any item isolated grooves of claim 10 to 15, which is characterized in that the isolated groove
Depth-to-width ratio range be 5~20, including endpoint value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810643957.6A CN108831856A (en) | 2017-08-09 | 2017-08-09 | The filling equipment and fill method of isolated groove |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810643957.6A CN108831856A (en) | 2017-08-09 | 2017-08-09 | The filling equipment and fill method of isolated groove |
| CN201710676374.9A CN107359136B (en) | 2017-08-09 | 2017-08-09 | The fill method of isolated groove, the interstitital texture of equipment and isolated groove |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710676374.9A Division CN107359136B (en) | 2017-08-09 | 2017-08-09 | The fill method of isolated groove, the interstitital texture of equipment and isolated groove |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108831856A true CN108831856A (en) | 2018-11-16 |
Family
ID=60288018
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810643957.6A Pending CN108831856A (en) | 2017-08-09 | 2017-08-09 | The filling equipment and fill method of isolated groove |
| CN201710676374.9A Expired - Fee Related CN107359136B (en) | 2017-08-09 | 2017-08-09 | The fill method of isolated groove, the interstitital texture of equipment and isolated groove |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710676374.9A Expired - Fee Related CN107359136B (en) | 2017-08-09 | 2017-08-09 | The fill method of isolated groove, the interstitital texture of equipment and isolated groove |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN108831856A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020048004A1 (en) * | 1996-03-29 | 2002-04-25 | Nikon Corporation | Environmental control apparatus for exposure apparatus |
| US20050079682A1 (en) * | 2003-10-10 | 2005-04-14 | Mi-Jin Lee | Method of manufacturing void-free shallow trench isolation layer |
| CN1713355A (en) * | 2004-06-15 | 2005-12-28 | 株式会社瑞萨科技 | Manufacturing method of semiconductor device |
| CN101231967A (en) * | 2007-01-26 | 2008-07-30 | 联华电子股份有限公司 | Shallow groove isolation layer of semiconductor element and manufacturing method thereof |
| US20090149001A1 (en) * | 2006-05-31 | 2009-06-11 | Corning Incorporated | Producing soi structure using high-purity ion shower |
| CN104576505A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN105448801A (en) * | 2014-05-28 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for forming shallow trench isolation |
| US20170103888A1 (en) * | 2015-10-13 | 2017-04-13 | Entegris, Inc. | AMINE CATALYSTS FOR LOW TEMPERATURE ALD/CVD SiO2 DEPOSITION USING HEXACHLORODISILANE/H2O |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6869860B2 (en) * | 2003-06-03 | 2005-03-22 | International Business Machines Corporation | Filling high aspect ratio isolation structures with polysilazane based material |
| KR20080062744A (en) * | 2006-12-29 | 2008-07-03 | 주식회사 하이닉스반도체 | Method for fabricating isolation layer in semiconductor device |
| KR100870322B1 (en) * | 2007-02-09 | 2008-11-25 | 주식회사 하이닉스반도체 | Method of forming isolation film of semiconductor device |
| US7892942B2 (en) * | 2007-07-09 | 2011-02-22 | Micron Technology Inc. | Methods of forming semiconductor constructions, and methods of forming isolation regions |
| US7655532B1 (en) * | 2008-07-25 | 2010-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI film property using SOD post-treatment |
| US8796105B2 (en) * | 2012-07-25 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for preparing polysilazane on a semiconductor wafer |
| US8975155B2 (en) * | 2013-07-10 | 2015-03-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a shallow trench isolation structure |
-
2017
- 2017-08-09 CN CN201810643957.6A patent/CN108831856A/en active Pending
- 2017-08-09 CN CN201710676374.9A patent/CN107359136B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020048004A1 (en) * | 1996-03-29 | 2002-04-25 | Nikon Corporation | Environmental control apparatus for exposure apparatus |
| US20050079682A1 (en) * | 2003-10-10 | 2005-04-14 | Mi-Jin Lee | Method of manufacturing void-free shallow trench isolation layer |
| CN1713355A (en) * | 2004-06-15 | 2005-12-28 | 株式会社瑞萨科技 | Manufacturing method of semiconductor device |
| US20090149001A1 (en) * | 2006-05-31 | 2009-06-11 | Corning Incorporated | Producing soi structure using high-purity ion shower |
| CN101231967A (en) * | 2007-01-26 | 2008-07-30 | 联华电子股份有限公司 | Shallow groove isolation layer of semiconductor element and manufacturing method thereof |
| CN104576505A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN105448801A (en) * | 2014-05-28 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for forming shallow trench isolation |
| US20170103888A1 (en) * | 2015-10-13 | 2017-04-13 | Entegris, Inc. | AMINE CATALYSTS FOR LOW TEMPERATURE ALD/CVD SiO2 DEPOSITION USING HEXACHLORODISILANE/H2O |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107359136B (en) | 2018-10-02 |
| CN107359136A (en) | 2017-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100639147B1 (en) | Plasma processing method | |
| CN106463395B (en) | Manufacturing method, substrate processing device and the recording medium of semiconductor devices | |
| TWI392012B (en) | Integration sequences with top profile modification | |
| CN101231951B (en) | Oxide etch with NH3-NF3 chemical | |
| US20110053381A1 (en) | Method for modifying insulating film with plasma | |
| US8105647B2 (en) | Method of forming oxide film and oxide deposition apparatus | |
| US20070207590A1 (en) | Manufacturing method of semiconductor device | |
| WO2013035561A1 (en) | Semiconductor device manufacturing method and substrate treatment system | |
| US6511888B1 (en) | Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step | |
| TWI454600B (en) | Pattern formation method | |
| US20070264842A1 (en) | Insulation film deposition method for a semiconductor device | |
| JP2007027777A (en) | Method of manufacturing electron device material | |
| CN103081071B (en) | Substrate processing method using same and substrate board treatment | |
| CN107564848A (en) | Semiconductor structure and forming method thereof | |
| CN110828346A (en) | Batch curing chamber with gas distribution and individual pumping | |
| KR20210134737A (en) | Film-forming method and film-forming apparatus | |
| KR101417356B1 (en) | Method and apparatus for preparing polysilazane on a semiconductor wafer | |
| US20140242810A1 (en) | Substrate processing apparatus and method of supplying and exhausting gas | |
| TW200308016A (en) | Method and device for manufacturing semiconductor | |
| JP7541108B2 (en) | Method for filling and processing dielectric materials | |
| CN107359136B (en) | The fill method of isolated groove, the interstitital texture of equipment and isolated groove | |
| KR101131730B1 (en) | Method for protecting semiconductor wafer and process for producing semiconductor device | |
| CN102969239A (en) | Method for improving isolation oxide CMP uniformity and special equipment thereof | |
| CN207134346U (en) | The pad device of isolated groove and the interstitital texture of isolated groove | |
| TWI839600B (en) | Low temperature steam free oxide gapfill |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181116 |
|
| WD01 | Invention patent application deemed withdrawn after publication |