CN108831826A - A method of reducing imaging sensor stain - Google Patents
A method of reducing imaging sensor stain Download PDFInfo
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- CN108831826A CN108831826A CN201810673795.0A CN201810673795A CN108831826A CN 108831826 A CN108831826 A CN 108831826A CN 201810673795 A CN201810673795 A CN 201810673795A CN 108831826 A CN108831826 A CN 108831826A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000003384 imaging method Methods 0.000 title claims abstract description 44
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 32
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 31
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 31
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000002347 injection Methods 0.000 claims abstract description 18
- 239000007924 injection Substances 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 27
- -1 carbon hydrogen compound Chemical class 0.000 abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 6
- 150000004706 metal oxides Chemical class 0.000 abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910021645 metal ion Inorganic materials 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 229940090044 injection Drugs 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The present invention relates to a kind of methods for reducing imaging sensor stain, include the following steps：Substrate, including pixel region and logic area are provided；First time ion implanting is carried out in the source-drain electrode of pixel region CMOS；Second of ion implanting is carried out in pixel region, second of ion implanting includes injection hydrocarbon.More, the higher situation of current leakage amount that there are metal impurities at the white pixel point of image sensor chip pixel region, metal impurities are more, the generation of leakage of current and white pixel stain situation is often related with the factors such as metal ion pollution, substrate raw material, lattice defect and injection condition.In the present invention, high concentration carbon hydrogen compound is injected by using in substrate shallow-layer, the sufficiently reaction such as hydrocarbon, silicon ion, oxonium ion and metal impurities is set to generate metal oxide, achieve the effect that capture metal impurities, to reduce leakage of current amount, and it is substantially reduced the white pixel stain of pixel region, to improve the performance of product.
Description
Technical field
The present invention relates to semiconductor field, in particular to a kind of method for reducing imaging sensor stain.
Background technique
In semiconductor image sensor manufacturing process, the chip of imaging sensor is divided into pixel region and logic area, pixel region
The electronics of middle storage is formed by the converting photons in photodiode, and white pixel stain is to influence to electronically form in pixel region
An important factor for and imaging sensor image quality key.
In chip production manufacturing process, properties of product are usually measured with the number of white pixel point, are generated in technique
Metal impurities can generate white pixel stain, under conditions of complete darkness, the pixel number number value of output, which can be greater than, to be said
Mean pixel digital number value, makes image fault in bright book.Therefore a large amount of white pixel stain will affect imaging sensor
Image quality.
Therefore, it is badly in need of providing a kind of method for reducing imaging sensor stain, it is dirty to solve white pixel in the prior art
The image quality of point influence imaging sensor, the problem of making image fault.
Summary of the invention
The purpose of the present invention is to provide a kind of methods for reducing imaging sensor stain, white in the prior art to solve
The problem of pixel stain influences the image quality of imaging sensor, makes image fault.
In order to solve the problems in the existing technology, the present invention provides a kind of sides for reducing imaging sensor stain
Method includes the following steps：
S1：Substrate, including pixel region and logic area are provided；
S2：First time ion implanting is carried out in the source-drain electrode of pixel region CMOS；
S3：Second of ion implanting is carried out in pixel region, second of ion implanting includes injection hydrocarbon.
Optionally, in the method for reducing imaging sensor stain, the hydrocarbon captures metal impurities.
Optionally, in the method for reducing imaging sensor stain, the metal impurities include iron, nickel and tungsten.
Optionally, in the method for reducing imaging sensor stain, the hydrocarbon is injected to apart from substrate surface
At 1.05~1.55mm.
Optionally, in the method for reducing imaging sensor stain, the concentration of the hydrocarbon is 4.5*1015~
5.5*1015cm-2。
Optionally, in the method for reducing imaging sensor stain, the source-drain electrode includes N-type source-drain electrode and p-type source and drain
Pole.
Optionally, in the method for reducing imaging sensor stain, S3 includes：
Photoetching process is carried out, patterned photoresist layer is formed；
Using patterned photoresist layer as mask, second of ion implanting is carried out；And
Remove the photoresist layer.
Optionally, in the method for reducing imaging sensor stain, it is brilliant that the patterned photoresist layer exposes reset
Body area under control domain, row selector region or source follower region.
Optionally, in the method for reducing imaging sensor stain, the patterned photoresist layer exposes floating and expands
Dissipate region.
Optionally, in the method for reducing imaging sensor stain, the patterned photoresist layer exposes photoelectricity two
Pole pipe region.
In the method provided by the present invention for reducing imaging sensor stain, the side for reducing imaging sensor stain
Method includes the following steps：Substrate, including pixel region and logic area are provided；The first secondary ion is carried out in the source-drain electrode of pixel region CMOS
Injection；Second of ion implanting is carried out in pixel region, second of ion implanting includes injection hydrocarbon.In the present invention
In, high concentration carbon hydrogen compound is injected by using in substrate shallow-layer, keeps hydrocarbon, silicon ion, oxonium ion and metal miscellaneous
Matter etc. is sufficiently reacted, and is achieved the effect that capture metal impurities, to reduce leakage of current amount, and is substantially reduced the white of pixel region
Pixel stain, to improve the performance of product.
Detailed description of the invention
Fig. 1 is the flow chart provided in an embodiment of the present invention for reducing imaging sensor stain；
Fig. 2 is image sensor circuit structure chart provided in an embodiment of the present invention；
Fig. 3 is three kinds of masking regime schematic diagrames provided in an embodiment of the present invention；
Fig. 4 is white pixel stain comparison diagram provided in an embodiment of the present invention；
Wherein, 1- photodiode；2- floating diffusion region；3- reset transistor；4- source follower；5- row selector；
6- mask plate；7- ion implanting point.
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Please refer to figs. 1 to 4, and Fig. 1 is the flow chart provided in an embodiment of the present invention for reducing imaging sensor stain；Fig. 2
For image sensor circuit structure chart provided in an embodiment of the present invention；Fig. 3 is three kinds of masking regimes provided in an embodiment of the present invention
Schematic diagram；Fig. 4 is white pixel stain comparison diagram provided in an embodiment of the present invention.
The present invention provides a kind of methods for reducing imaging sensor stain, to solve white pixel stain in the prior art
Influence the image quality of imaging sensor, the problem of making image fault.
In order to solve the problems in the existing technology, the present invention provides a kind of sides for reducing imaging sensor stain
Method includes the following steps with reference to Fig. 1：
S1：Substrate, including pixel region and logic area are provided；
S2：First time ion implanting is carried out in the source-drain electrode of pixel region CMOS；
S3：Second of ion implanting is carried out in pixel region, second of ion implanting includes injection hydrocarbon.
Complementary metal oxide semiconductor (CMOS) manufacturing process is applied to the photosensitive element of production digital image equipment,
The especially biggish single-lens reflex camera digital camera of piece width specification.The image signal of acquisition is changed through the analog-digital converter on chip
For digital signal output.For CMOS by multiple charge-electric pressure converters and ranks switch control, reading speed is quickly, most of
The high speed camera of 500fps or more is all CMOS camera.
In the present invention, by using substrate shallow-layer inject high concentration carbon hydrogen compound, make hydrocarbon, silicon from
The sufficiently reaction such as son, oxonium ion and metal impurities, achievees the effect that capture metal impurities, to reduce leakage of current amount, and it is bright
The aobvious white pixel stain for reducing pixel region, to improve the performance of product.
As shown in Figure 1, executing step S1, substrate, including pixel region and logic area are provided.In the embodiment of the present application, add
The silicon wafer that work is completed mainly includes the silicon wafer for tentatively having completed manufacture, that is, have passed through crystal pulling and cutting etc., in the prior art, is led to
Often using this silicon wafer as substrate, subsequent semiconductor devices is made.
Then step S2 is executed, carries out first time ion implanting in the source-drain electrode of pixel region CMOS.Provided by the present invention
Reduction imaging sensor stain method in, the metal impurities are from a wealth of sources, are probably derived from manufacturing process, possible source
In material itself, also apparently generated derived from reaction, therefore the metal impurities are relatively more, the metal impurities include iron, nickel and
Tungsten.Ion implanting has many advantages, such as, diversity：Any element all can serve as injection ion in principle；The structure of formation can
It is not limited by thermodynamic parameter (diffusion, solubility etc.)；Do not change：Original size of workpiece and thick is not changed after injection ion
Rugosity etc.；It is suitable for last procedure of all kinds of precision component productions；Fastness：Inject ion directly and material surface atom
Or molecule combines, and forms modified layer, modified layer and base material are without clearly interface, and in conjunction with firm, there is no what is fallen off to show
As；It is unrestricted：Injection process can be carried out lower than subzero, high to several hundred thousands of degree in material temperature；It can be to those common sides
The material that method cannot be handled carries out surface peening.
Then it executes step S3 and in the source-drain electrode ion implantation process of the CMOS tube, increases one in substrate pixel area
Road high concentration C3H5Hydrocarbon ion injection.Hydrocarbon, silicon ion, oxonium ion and the metal impurities etc. for making shallow-layer fill
Reaction is divided to generate metal oxide, the hydrocarbon achievees the effect that capture metal impurities, to reduce leakage of current amount, and
And it is substantially reduced the white pixel stain of pixel region, to improve the performance of product.
Specifically, the hydrocarbon, silicon ion, oxonium ion react to obtain metal oxide with the metal impurities.
The first step：Silicon carbide reacts with the oxygen in gap, generates carbon silicon oxygen complex；Second step：The carbon silicon oxygen complex
It reacts with the oxygen in gap, generates oxygen precipitation core；Third step：Oxygen in the oxygen precipitation core and gap occurs anti-
It answers, generates oxygen precipitation；4th step：The oxygen precipitation reacts with metal ion, generates metal oxide.To reduce electric current
Amount of leakage, and pixel region white pixel stain as caused by metal impurities is reduced, to improve the performance of product.
Preferably, the hydrocarbon needs and silicon ion, oxonium ion and the metal impurities react, the carbon
The depth of hydrogen compound injection in the substrate is not easy too deeply, if too deep, it will cause contamination of substrate, also will affect hydrocarbonization
The reaction of object is closed, therefore injects the hydrocarbon to being best at 1.05~1.55mm of substrate surface, for example, can be with
The hydrocarbon is injected at described substrate surface 1.25mm, 1.3mm or 1.35mm, it can be by hydrocarbonization
It closes object accommodating in the substrate, nor affects on the hydrocarbon and capture the metal impurities.
Further, to make the metal impurities reaction sufficiently, the hydrocarbon of injection is high concentration carbon hydrogenation
Close object.Specifically, the concentration of the hydrocarbon is 4.5*1015~5.5*1015cm-2, preferably, dense in hydrocarbon
Degree is 5*1015cm-2When, it is best to capture the metal impurities effect.
In the method provided by the present invention for reducing imaging sensor stain, the source-drain electrode includes N-type source-drain electrode and P
Type source-drain electrode.The structure of effect pipe is to go out the p type island region domain of high concentration using impurity diffusion on the both sides of one piece of N-type semiconductor, uses P
+ indicate, form two P+N knots.Two electrodes are drawn at the both ends of N-type semiconductor, are referred to as drain D and source S.Both sides
The area P extraction electrode and the referred to as grid G that connects together.If adding forward voltage between leakage, source electrode, more sons in the area N are (namely
Electronics) it is electrically conductive.They flow to drain D from source S.Current direction is directed toward S, referred to as drain current ID by D.Due to
Conducting channel is N-type, therefore referred to as N-channel technotron.
The drain electrode of the field-effect tube (including junction type and insulated-gate type) and source electrode are usually made symmetrically, drain electrode and source electrode
It may be used interchangeably.But some isolated gate FETs have linked together source electrode and substrate when manufacturing product, institute
It cannot be exchanged with the source electrode and drain electrode of this pipe.Substrate is then individually drawn a pin by some pipes, forms four pipes
Foot.Ordinary circumstance substrate P connects low potential, and N substrate connects high potential.
It is further comprising the steps of in S3 in the method provided by the present invention for reducing imaging sensor stain：It carries out
Photoetching process forms patterned photoresist layer；Using patterned photoresist layer as mask, second of ion implanting is carried out；With
And the removal photoresist layer.
It is laid with mask plate 6 in pixel region, so that the position of the ion implanting is more accurate, described in significantly more efficient removal
Metal impurities.The mask plate 6 is figure mother matrix used in the common photoetching process of micro-nano technology technology.By opaque screening
Optical thin film forms mask graph structure on the transparent substrate, then graphical information is transferred on product substrate by exposure process.
Mask plate 6 to be processed is made of glass/quartz substrate, layers of chrome and photoresist layer.Its graphic structure can be added by mask-making technology
Work obtains, and commonly using process equipment is write-through lithographic equipment, such as the mechanical, electrical beamlet litho machine of laser direct-write photoetching.
In modern technologies, the application of mask plate 6 is very extensive, requires in the field for being related to photoetching process using mask
Plate 6, such as IC (Integrated Circuit, integrated circuit), FPD (Flat Panel Display, flat-panel monitor), PCB
(Printed Circuit Boards, printed circuit board) and MEMS (Micro Electro Mechanical Systems, it is micro-
Mechatronic Systems) etc..
As shown in Figures 2 and 3, in the method that imaging sensor stain is reduced provided by the embodiment of the present invention, the figure
The photoresist layer of case can expose three classes region, the first kind：The patterned photoresist layer can expose reset crystal
3 region of pipe, 4 region of 5 region of row selector or source follower (region RST/RS/SF) are ion implanting ion implanting points；Second
Class：The patterned photoresist layer can expose floating diffusion region 2 (region FD)；Third class：The patterned light
Photoresist layer can also expose the region photodiode 1 (Photo diode).The patterned photoresist layer exposes substrate
The ion implanting point 7 in upper three classes region, makes ion implanting corresponding position.
As shown in figure 4, research has shown that, by 6 first kind domain mode of mask plate exposure, inject the nytron
After object, the metal impurities remaining initial percent 95；By the 6 second class domain mode of mask plate exposure, institute is injected
After stating hydrocarbon, the metal impurities remaining initial percent 70；It is sudden and violent by the 6 third class domain mode of mask plate
Dew, injects after the hydrocarbon, the metal impurities remaining initial percent 52；It is arranged using third domain mode
Mask plate 6, the metal impurities reduce by percent 48, close to general.
It is significantly different that the mask plate 6 is placed on different location effect, in order to dirty from white pixel is reduced to the full extent
Point, therefore preferably selection is in 1 region of photodiode exposure in the present invention, to improve the performance of product to the full extent.
Common, the hydrocarbon is injected into the substrate by the mask plate 6, so that it is determined that described hydrocarbon
The region etc. of compound injection.Further, the shape of the mask plate 6 determines the region of the hydrocarbon injection.
To sum up, in the method provided by the present invention for reducing imaging sensor stain, the reduction imaging sensor is dirty
The method of point includes the following steps：Substrate, including pixel region and logic area are provided；First is carried out in the source-drain electrode of pixel region CMOS
Secondary ion injection；Second of ion implanting is carried out in pixel region, second of ion implanting includes injection hydrocarbon.
In the present invention, by using substrate shallow-layer inject high concentration carbon hydrogen compound, make hydrocarbon, silicon from
The sufficiently reaction such as son, oxonium ion and metal impurities generates metal oxide, achievees the effect that capture metal impurities, to reduce electric current
Amount of leakage, and it is substantially reduced the white pixel stain of pixel region, to improve the performance of product.
The above is only a preferred embodiment of the present invention, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical solution of the present invention, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent replacement or modification, belong to the content without departing from technical solution of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (10)
1. a kind of method for reducing imaging sensor stain, which is characterized in that include the following steps：
S1：Substrate, including pixel region and logic area are provided；
S2：First time ion implanting is carried out in the source-drain electrode of pixel region CMOS；
S3：Second of ion implanting is carried out in pixel region, second of ion implanting includes injection hydrocarbon.
2. reducing the method for imaging sensor stain as described in claim 1, which is characterized in that the hydrocarbon capture
Metal impurities.
3. reducing the method for imaging sensor stain as claimed in claim 2, which is characterized in that the metal impurities include
Iron, nickel and tungsten.
4. reducing the method for imaging sensor stain as described in claim 1, which is characterized in that inject the hydrocarbon
To at 1.05~1.55mm of substrate surface.
5. as described in claim 1 reduce imaging sensor stain method, which is characterized in that the hydrocarbon it is dense
Degree is 4.5*1015~5.5*1015cm-2。
6. reducing the method for imaging sensor stain as described in claim 1, which is characterized in that the source-drain electrode includes N-type
Source-drain electrode and p-type source-drain electrode.
7. reducing the method for imaging sensor stain as described in claim 1, which is characterized in that S3 includes：
Photoetching process is carried out, patterned photoresist layer is formed；
Using patterned photoresist layer as mask, second of ion implanting is carried out；And
Remove the photoresist layer.
8. reducing the method for imaging sensor stain as claimed in claim 7, which is characterized in that the patterned photoresist
Layer exposes reset transistor region, row selector region or source follower region.
9. reducing the method for imaging sensor stain as claimed in claim 7, which is characterized in that the patterned photoresist
Layer exposes floating diffusion region.
10. reducing the method for imaging sensor stain as claimed in claim 7, which is characterized in that the patterned photoetching
Glue-line exposes photodiode area.
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| CN201810673795.0A CN108831826A (en) | 2018-06-26 | 2018-06-26 | A method of reducing imaging sensor stain |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810673795.0A CN108831826A (en) | 2018-06-26 | 2018-06-26 | A method of reducing imaging sensor stain |
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| US20100267184A1 (en) * | 2009-04-21 | 2010-10-21 | Samsung Electronics Co., Ltd. | Methods of manufacturing image sensors including gettering regions |
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