CN108807712A - A kind of novel OLED top illuminating devices and display device - Google Patents
A kind of novel OLED top illuminating devices and display device Download PDFInfo
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- CN108807712A CN108807712A CN201810875426.XA CN201810875426A CN108807712A CN 108807712 A CN108807712 A CN 108807712A CN 201810875426 A CN201810875426 A CN 201810875426A CN 108807712 A CN108807712 A CN 108807712A
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Abstract
The invention discloses a kind of novel OLED top illuminating devices and display devices, by substrate, anode, cathode and be sandwiched in the anode, the organic layer among cathode forms, the organic layer includes at least one layer of hole transmission layer, at least one layer of luminescent layer and at least one layer of electron transfer layer with the cathode contacts with the positive contact；The electron transfer layer contains the compound of O=X structures, and X is selected from carbon atom, silicon atom, sulphur atom or phosphorus atoms；The cathode includes the silver and/or silver alloy that mass content is not less than 95%, the present invention uses the compound with O=X structures as electron transfer layer, it interacts with metallic silver, make metallic atom uniformly, steadily form a film on the electron transport layer, film layer is thin, resistance is low, obtains good translucency and electric conductivity.
Description
Technical field
The invention belongs to display technology fields, are related to novel OLED top illuminating devices and display device.
Background technology
In the prior art, organic electroluminescence device (abbreviation OLEDs) by substrate, anode, cathode and is clipped in anode, the moon
Extremely intermediate organic layer.Top illuminating device refers to light from the device sent out far from substrate-side, can be anode far from substrate, can also
It is cathode far from substrate, most common cathode is sent out far from substrate light from cathode, it is desirable that the light transmission rate and good conductivity of cathode.
The cathode of top illuminating device is generally made of metal or metal composite, since there is metallic silver good electric conductivity and light to penetrate
Rate, common metal silver and preferred material of other metal alloys as cathode.
But since the cathode of OLEDs is formed by heating in vacuum deposition of silver, and in deposition process original can occur for metallic silver
Son aggregation causes electric conductivity to be deteriorated to form many silver-colored " isolated islands ", usually will with metallic silver co-doped another or it is more
Kind metallic element such as Mg or Ga, above-mentioned metallic element electric conductivity is poor, though silver can be inhibited to assemble, light absorption is more serious,
Photopermeability is influenced, generally requires the silver-colored weight ratio in silver alloy to be less than 99%, more preferably less than 95%, but with silver alloy
Ratio become smaller, electric conductivity can phase strain differential；Therefore, cathodic conductivity and photopermeability are prodigious problems.
Invention content
To overcome the drawbacks described above of the prior art, the purpose of the present invention is to provide a kind of novel OLED device and display dresses
It sets, the organic layer of luminous light extraction lateral electrode when inverted structure (be normally cathode, be anode) contact contains O=X structures with top
Compound, wherein X includes carbon atom, silicon atom, sulphur atom or phosphorus atoms, and light extraction lateral electrode is more than using silver-colored weight accounting
95% metallic silver or its alloy, to obtain good electric conductivity and translucency.
The above-mentioned purpose of the present invention is achieved through the following technical solutions：
In a first aspect, a kind of novel OLED top illuminating devices, by substrate, anode, cathode and are sandwiched in the anode, cathode
Intermediate organic layer composition, wherein
The substrate is placed in the anode side；
The organic layer includes：At least one layer of hole transmission layer with the positive contact, at least one layer of luminescent layer and extremely
Lack the electron transfer layer of one layer and the cathode contacts, and the electron transfer layer contains the compound of O=X structures, wherein X
One kind in carbon atom, silicon atom, sulphur atom or phosphorus atoms；
The cathode is selected from metal and/or its alloy.
Further, the cathode is selected from the silver and/or silver alloy that mass content is not less than 95%.
Further, the substrate includes glass plate or plastic plate.
Further, the anode is made of at least one layer of reflective metal layer and conductive metal layer；The reflective metal layer
Including Ag or Ag alloys, thickness in monolayer is 50~150nm；The conductive metal layer includes indium tin oxide (ITO) or indium
Gallium zinc oxide (IGZO), thickness are 5~30nm；In some preferred embodiments, the anode is closed selected from Ag/ITO, Ag
Gold/ITO or Ag/IGZO.
Further, the hole transmission layer includes amine or contains carbazole compound, and thickness is 30~250nm, preferably
For 100~250nm.In some preferred embodiments, due to the optical thickness of different colours difference, energy is injected to increase hole
Power promotes device effect, using single-layer or multi-layer material, the hole that thickness is 0.5~30nm is first prepared on the anode and is noted
Enter layer, then prepare the hole transmission layer that thickness is 5~200nm on the hole injection layer, then preferably 50~200nm exists
The electronic barrier layer that thickness is 5~100nm is prepared on the hole transmission layer；The hole injection layer may be used as HATCN,
The single P-type material of F4-TCNQ or NOVALED companies can also use aforementioned p-type material and amine or carbazole compound mixed
It closes and uses, wherein the P-type material mass ratio is no more than 50%, preferably more than 10%；The hole transmission layer includes amine
Or contain carbazole compound, preferably comprise the compound of following one or more kinds of following chemical constitutions：
Further, the electronic barrier layer includes the compound containing carbazole group or aniline group.
Further, the color of the luminescent layer includes at least a kind of in feux rouges, green light, blue light, white light, yellow light.It is described
Luminescent layer is made of material of main part and guest emitting material, and guest emitting material is selected from fluorescent material, phosphor material or heat lag
One kind in fluorescent material, thickness are 10~50nm, preferably 20~40nm.
Further, when guest emitting material be selected from fluorescent material when, the material of main part be selected from containing anthracene or its
His fused ring compound preferably comprises the compound of following one or more kinds of following chemical constitutions：
The fluorescent material is selected from aromatic amine or fragrant vinyl compound, and it is as follows to preferably comprise following one or more
The compound of chemical constitution：
And the mass ratio of fluorescent material described in the object and the material of main part is 1~5：50.
Further, when guest emitting material is selected from phosphorescent light-emitting materials, material of main part selection includes at least carbazole
One or more kinds of mixtures of unit or azepine fragrance ring element preferably comprise following one or more kinds of following chemistry
The compound of structure：
The phosphorescent light-emitting materials are selected from the compound for including following one or more kinds of following chemical constitutions：
And the phosphor material and the mass ratio with the material of main part are 2~15：100.
Further, when guest emitting material is selected from heat lag fluorescent material, the material of main part selects aromatic amine
And carbazole, the heat lag fluorescent material are selected from the compound containing carbazole unit or azepine fragrance ring element, and the heat
The mass ratio of delayed fluorescence material and the material of main part is 1~6：20.
Further, it is the hole blocking layer of 5~20nm including thickness between the luminescent layer and the electron transfer layer,
Selected from contain substituted or unsubstituted pyrimidine, substituted or unsubstituted pyrazine, substituted or unsubstituted pyridazine or substitution
Or unsubstituted three pyrimidine dihydrochloride, preferably comprise the compound of following one or more kinds of following chemical constitutions：
Further, the electron transfer layer also includes one kind in alkali metal, alkaline-earth metal or rare earth metal, and quality
Percentage is not higher than 50%, preferably no greater than 25% and is not higher than 15% successively, and one in more preferable metal Li, Ca, Yb or Mg
Kind, since tenor is very low, the cathode and electron transport layer materials interaction influence are small, can get high quality
Cathodic metal film layer.
Further, the electron transfer layer also includes alkali metal compound, alkaline earth metal compound, rare earth metal
One kind in object is closed, and mass percent is 20%~80%.
Further, the electron transfer layer includes one or more kinds of in the compound selected from such as lower structure：
Further, the electron transfer layer includes one or more kinds of in following compound：
Further, the cathode is selected from one kind of alkali metal, alkaline-earth metal or rare earth metal；More preferably silver and/or
Silver-colored mass content is not less than 95% silver alloy.
Further, the transmitance of the cathode is more than 37% when wavelength is 460nm, is preferably in wavelength
It is more than 43% when 460nm；The resistance of the cathode<20 Ω, preferably<10Ω.
Further, the cathode surface further includes cap layer.
The second aspect of the present invention, a kind of OLED display, including above-mentioned novel OLED top illuminating devices.
The principle of the present invention is：The compound interaction of O=X structures, as follows in the Ag and electron transfer layer of cathode
Shown in formula.
Compared with prior art, the beneficial effects of the present invention are：
Conventional organic electroluminescence device uses vacuum evaporation high proportion metal silver film, since silver aggregation causes cathode electric
Resistance is high, poorly conductive；The present invention uses the compound with O=X structures to interact as electron transfer layer and metallic silver
Good, making metallic atom, uniformly, steadily form a film on the electron transport layer film layer is thin, resistance is low, can obtain good translucency
And electric conductivity.
Description of the drawings
Fig. 1 is the structural schematic diagram of tradition OLED luminescent devices；Wherein：1- anodes (ITO), 2- hole transmission layers (HTL),
3- luminescent layers (EML), 4- electron transfer layers (ETL), 5- cathodes；
Fig. 2 is the structural schematic diagram of OLED top illuminating devices in the embodiment of the present invention.
Specific implementation mode
The technical solution that the invention will now be described in detail with reference to the accompanying drawings, but protection scope of the present invention is not limited to following realities
Apply example.
One：The cathode transmitance and electric conductivity of OLED top illuminating devices are tested
1. test method
The test method of cathode transmitance：Using corrected optical transmittance test equipment, wavelength is from 400~700nm
The area of continuous scanning, transmission measurement hot spot is 0.2~1cm2。
The test method of cathodic conductivity：Square resistance is tested by four-point probe methods.
2. device
Structure is：Glass plate base/ETL (35nm)/cathode (13nm).
Embodiment 1
According to above-mentioned device architecture, wherein cathode is Ag, and ETL is
Embodiment 2
According to above-mentioned device architecture, wherein cathode is Ag, and ETL is
Embodiment 3
According to above-mentioned device architecture, wherein cathode is Ag, and ETL is
Embodiment 4
According to above-mentioned device architecture, wherein cathode is Mg：Ag (mass ratioes 3：7,13nm), ETL is
Comparative example 1
According to above-mentioned device architecture, wherein cathode is Ag, and ETL is
Comparative example 2
According to above-mentioned device architecture, wherein cathode is Mg:Ag (mass ratioes 3：7,13nm), ETL is
Table 1：Transmitance and resistance data
Above-described embodiment 1-4 and comparative example prepare OLED top illuminating devices cathode transmitance and electric conductivity test result such as
Shown in table 1, it can be seen that compared to device surface uniform ground prepared by comparative example 1 and 2, embodiment 1-4, light is saturating at 460nm
The rate of mistake increases, and electric conductivity greatly enhances.
Two：OLED top illuminating device all-round property testings
1. test method
Performance respectively according to standard testing OLED top illuminating devices is as follows：
1) voltage@10mA/cm2, unit V；
2) current efficiency@10mA/cm2, unit Cd/A；
3) 95% die-away time of service life@40mA/cm2, unit h.
2. device
Although feux rouges, green light and white light are in material structure and thickness difference, the matching method of cathode and electron transfer layer
Equally applicable, following embodiment is all made of blue top illuminating device, and specific layers of material is as follows：
(1) substrate：Glass substrate or plastic base.
(2) anode (ITO)：The conductive metal layer that the reflective metal layer and thickness for being 50~150nm by thickness are 5~30nm
It constitutes, if AG/ITO, AG alloy/ITO or AG/IGZO can be multilayer reflective layers to increase device reflecting effect.
(3) hole transmission layer (HTL)：Anode to the material between luminescent layer all has the function of that hole transport, overall thickness are
30~250nm, more excellent is 100~250nm.If using the luminous Resonant Intake System in this functional layer adjustment top, the light of different colours
Thickness is different, and the single-layer or multi-layer material including at least amine or containing carbazole compound may be used and increase hole injection energy
Power promotes device effect.Specifically preparation method is：The hole injection layer that thickness is 0.5~30nm is first done on anode, is increased empty
Effect is injected in cave, using single P-type material such as HATCN, F4-TCNQ, NOVALED company P-type material molybdenum oxide, or using above-mentioned
P-type material is used in mixed way with amine or carbazole compound, and P-type material mass ratio is no more than 50% when being used in mixed way, preferably not
More than 10%.The hole transmission layer that thickness is 5~200nm is done on above-mentioned hole injection layer again, preferably 50~200nm can be with
Using containing the amine either single material containing carbazole compound or multiple material mixing.Then thickness is done on the hole transport layer
Degree is the electronic barrier layer of 5~100nm, promotes device electron-blocking capability and device stability.
(4) luminescent layer (EML)：Luminescent layer is made on hole transmission layer or electronic barrier layer, thickness is that 10~50nm is excellent
20~40nm is selected, and selected from feux rouges, green light, blue light, white light, the single light-emitting layer of yellow light or the combination of multilayer luminescent layer, by leading
Body material and selected from fluorescent material, phosphor material or heat lag fluorescent material guest emitting material composition, wherein fluorescent material
It is 2%~10% with mass ratio in material of main part, the mass ratio of phosphor material and material of main part is 2%~15%, and heat lag is glimmering
Luminescent material is 5%~30% with the mass ratio in material of main part.
(5) electron transfer layer (ETL)：From luminescent layer to the material between cathode be electron transfer layer, thickness be 30~
70nm；In order to promote device effect, the hole blocking layer that thickness is 5~20nm is done on the light-emitting layer, is done on the hole blocking layer
A kind of material or the electron transfer layer of multiple material mixing, when mixing and alkali metal, alkaline-earth metal or rare earth metal mixing, gold
It is less than 50% preferably smaller than 25%, more preferably less than 15% to belong to the weight ratio being added.Or mixed alkali metal compound, alkali
The weight ratio of earth metal compound, rare earth compound, metallic compound is 20%~80%, mixing material and high proportion
Metallic silver can inject electronics well when contacting.Mixed metal Li, Ca, Yb or Mg are used in a preferred embodiment, because
Tenor is very low, influences very little to the interaction of silver and electron transport material, obtains the best cathodic metal film layer of quality.
(6) cathode：It is not less than 95% silver and/or silver alloy from mass content.
(7) cap layer (Capping layer)：It is more than 1.8 material such as aminated compounds, aromatic condensed ring using refractive index
Compound.
When in following embodiment to illustrate, structure is：
Anode/HIL (10nm)/HTL (80nm)/EBL (30nm)/EML-BLUE (30nm)/HBL (10nm)/ETL/ cathodes/
CPL(70nm)。
Embodiment 5
It is made according to above-mentioned blue top illuminating device and material, wherein HIL, HTL, EBL, EML-Blue, HBL, CPL layers of material
Expect that the chemical constitution used is as shown in table 2；Cathode is Ag, thickness 13nm；ETL layer thickness is 35nm, using organic material and
The mass ratio of the mixture of metal Yb, Yb is 5%, and organic material structure is：
Embodiment 6
It is made according to above-mentioned blue top illuminating device and material, wherein HIL, HTL, EBL, EML-Blue, HBL, CPL layers of material
Expect that the chemical constitution used is as shown in table 2；Cathode is Ag, thickness 13nm；ETL layer thickness is 35nm, using organic material and
The mass ratio of the mixture of metal Yb, Yb is 5%, and organic material structure is：
Embodiment 7
It is made according to above-mentioned blue top illuminating device and material, wherein HIL, HTL, EBL, EML-Blue, HBL, CPL layers of material
Expect that the chemical constitution used is as shown in table 2；Cathode is Ag, thickness 13nm；ETL layer thickness is 35nm, using organic material and
The mass ratio of the mixture of metal Yb, Yb is 5%, and organic material structure is：
Embodiment 8
It is made according to above-mentioned blue top illuminating device and material, wherein HIL, HTL, EBL, EML-Blue, HBL, CPL layers of material
Expect that the chemical constitution used is as shown in table 2；Cathode be Mg and the mixture of Ag and Ag weight ratios be 70%, thickness 13nm；ETL
Layer thickness is 35nm, and using the mixture of organic material and metal Yb, the mass ratio of Yb is 5%, and organic material structure is：
Comparative example 3
It is made according to above-mentioned blue top illuminating device and material, wherein HIL, HTL, EBL, EML-Blue, HBL, CPL layers of material
Expect that the chemical constitution used is as shown in table 2；Cathode is Ag, thickness 13nm；ETL layer thickness is 35nm, using organic material and
The mass ratio of the mixture of metal Yb, Yb is 5%, and organic material structure is：
Comparative example 4
It is made according to above-mentioned blue top illuminating device and material, wherein HIL, HTL, EBL, EML-Blue, HBL, CPL layers of material
Expect that the chemical constitution used is as shown in table 2；Cathode be Mg and the mixture of Ag and Ag weight ratios be 70%, thickness 13nm；It adopts
Mass ratio with the mixture of organic material and metal Yb, Yb is 5%, and organic material structure is：
Table 2：Functional layer material
Table 3：Device performance test result
The performance test results of the tops OLED blue light-emitting device prepared by embodiment 5~8 and comparative example 3,4 are as shown in table 3, can
Device voltage to find out the present invention is relatively low, and 95% die-away time of service life is long, it was demonstrated that the present invention can greatly prolong making for device
Use the service life.
The above is presently preferred embodiments of the present invention, but the present invention should not be limited to disclosed in the embodiment
Content.So every do not depart from the lower equivalent or modification completed of spirit disclosed in this invention, the model that the present invention protects is both fallen within
It encloses.
Claims (13)
1. a kind of novel OLED top illuminating devices, by substrate, anode, cathode and it is sandwiched in the anode, organic among cathode
Layer composition, which is characterized in that
The substrate is placed in the anode side；
The organic layer includes：At least one layer of hole transmission layer, at least one layer of luminescent layer and at least one with the positive contact
The electron transfer layer of layer and the cathode contacts；Wherein,
The electron transfer layer contains the compound of O=X structures, and X is in carbon atom, silicon atom, sulphur atom or phosphorus atoms
It is a kind of；
The cathode includes the silver and/or silver alloy that mass content is not less than 95%.
2. novel OLED top illuminating devices as described in claim 1, which is characterized in that the electron transfer layer include it is a kind of or
Two or more following (I) structural compounds：
。
3. novel OLED top illuminating devices as claimed in claim 1 or 2, which is characterized in that the electron transfer layer includes one
Kind or two or more following (II) structural compounds：
4. novel OLED top illuminating devices as described in claim 1, which is characterized in that the electron transfer layer also includes metal
Or metallic compound；Wherein,
The one kind of the metal in alkali metal, alkaline-earth metal or rare earth metal, and mass percent is not higher than 50%；
The one kind of the metallic compound in alkali metal compound, alkaline earth metal compound, rare earth compound, and matter
It is 20%~80% to measure percentage.
5. novel OLED top illuminating devices as claimed in claim 4, which is characterized in that in the electron transfer layer, the gold
Belong to one kind in Li, Ca, Yb or Mg, 25% is not higher than for mass percent.
6. novel OLED top illuminating devices as described in claim 1, which is characterized in that the anode is by least one layer reflection gold
Belong to layer and conductive metal layer composition；Wherein,
The reflective metal layer is Ag or Ag alloys, and thickness in monolayer is 50~150nm；
The conductive metal layer includes indium tin oxide ITO or indium gallium zinc oxide IGZO, and thickness is 5~30nm；
The hole transmission layer includes amine or contains carbazole compound, and thickness is 30~250nm.
7. novel OLED top illuminating devices as claimed in claim 6, which is characterized in that
The anode is selected from one kind in Ag/ITO, Ag alloy/ITO or Ag/IGZO；
The hole transmission layer includes amine or contains carbazole compound, and thickness is 100~250nm.
8. novel OLED top illuminating devices as claimed in claims 6 or 7, which is characterized in that the hole transmission layer is selected from down
It is one or more kinds of in compound shown in formula (III)：
。
9. novel OLED top illuminating devices as described in claim 1, which is characterized in that
The color of the luminescent layer includes at least a kind of in feux rouges, green light, blue light, white light, yellow light；
The luminescent layer is made of material of main part and guest emitting material, and thickness is 10~50nm；Wherein,
The one kind of the guest emitting material in fluorescent material, phosphor material or heat lag fluorescent material, and the fluorescence
The mass ratio of material and the material of main part is 1~5：The mass ratio of 50 or described phosphor materials and the material of main part is 2~
15：The mass ratio of 100 or described heat lag fluorescent materials and the material of main part is 1~6：20.
10. novel OLED top illuminating devices as described in claim 1, which is characterized in that
Include the hole injection layer that thickness is 0.5~30nm between the anode and the hole transmission layer, and the hole is noted
Enter the P-type material of the layer choosing from P-type material or no more than 50wt.% and amine or the mixture of carbazole compound；
Include the electronic barrier layer that thickness is 5~100nm between the hole transmission layer and the luminescent layer, and the electronics hinders
Barrier is selected from the compound containing carbazole group or aniline group；
Include the hole blocking layer that thickness is 5~20nm between the luminescent layer and the electron transfer layer, and the hole hinders
Barrier be selected from containing substituted or unsubstituted pyrimidine, substituted or unsubstituted pyrazine, substituted or unsubstituted pyridazine or
One kind in substituted or unsubstituted three pyrimidine dihydrochloride.
11. novel OLED top illuminating devices as claimed in claim 10, which is characterized in that the hole blocking layer is selected from following formula
(IV) one or more kinds of in compound shown in：
12. novel OLED top illuminating devices as described in claim 1, which is characterized in that
The substrate includes glass plate or plastic plate；
The cathode surface further includes cap layer.
13. a kind of OLED display, which is characterized in that shine including the novel tops OLED as described in claim any one of 1-12
Device.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1997814A1 (en) * | 2007-05-28 | 2008-12-03 | Samsung Electronics Co., Ltd. | Functionalized Metal Nanoparticle, Buffer Layer Including the Same and Electronic Device Including the Buffer Layer |
| CN101747374A (en) * | 2010-01-21 | 2010-06-23 | 中国科学院长春应用化学研究所 | Compound containing phosphorus-oxygen groups and organic electroluminescent device comprising compound containing phosphorus-oxygen groups and preparation method thereof |
| EP2452946A1 (en) * | 2010-11-16 | 2012-05-16 | Novaled AG | Pyridylphosphinoxides for organic electronic device and organic electronic device |
| CN103180407A (en) * | 2010-10-15 | 2013-06-26 | 默克专利有限公司 | Triphenylene-based materials for organic electroluminescent devices |
| CN105722948A (en) * | 2013-09-30 | 2016-06-29 | 株式会社Lg化学 | Heterocyclic compound and organic light-emitting element using same |
| CN105829292A (en) * | 2013-12-19 | 2016-08-03 | 默克专利有限公司 | Heterocyclic spiro compounds |
-
2018
- 2018-08-03 CN CN201810875426.XA patent/CN108807712B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1997814A1 (en) * | 2007-05-28 | 2008-12-03 | Samsung Electronics Co., Ltd. | Functionalized Metal Nanoparticle, Buffer Layer Including the Same and Electronic Device Including the Buffer Layer |
| CN101747374A (en) * | 2010-01-21 | 2010-06-23 | 中国科学院长春应用化学研究所 | Compound containing phosphorus-oxygen groups and organic electroluminescent device comprising compound containing phosphorus-oxygen groups and preparation method thereof |
| CN103180407A (en) * | 2010-10-15 | 2013-06-26 | 默克专利有限公司 | Triphenylene-based materials for organic electroluminescent devices |
| EP2452946A1 (en) * | 2010-11-16 | 2012-05-16 | Novaled AG | Pyridylphosphinoxides for organic electronic device and organic electronic device |
| CN105722948A (en) * | 2013-09-30 | 2016-06-29 | 株式会社Lg化学 | Heterocyclic compound and organic light-emitting element using same |
| CN105829292A (en) * | 2013-12-19 | 2016-08-03 | 默克专利有限公司 | Heterocyclic spiro compounds |
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