CN108807634A - A kind of deep ultraviolet LED structure and preparation method thereof - Google Patents
A kind of deep ultraviolet LED structure and preparation method thereof Download PDFInfo
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- CN108807634A CN108807634A CN201810835420.XA CN201810835420A CN108807634A CN 108807634 A CN108807634 A CN 108807634A CN 201810835420 A CN201810835420 A CN 201810835420A CN 108807634 A CN108807634 A CN 108807634A
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 15
- 239000010931 gold Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 69
- 239000010949 copper Substances 0.000 claims description 67
- 229910052802 copper Inorganic materials 0.000 claims description 64
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 61
- 239000011701 zinc Substances 0.000 claims description 44
- 229910052725 zinc Inorganic materials 0.000 claims description 35
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 34
- 239000000126 substance Substances 0.000 claims description 28
- 229910002704 AlGaN Inorganic materials 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 230000003139 buffering effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 310
- 239000000203 mixture Substances 0.000 description 36
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 206010039509 Scab Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The present invention proposes a kind of deep ultraviolet LED structure and preparation method thereof, is related to technical field of semiconductors.The deep ultraviolet LED structure includes the first substrate, template layer, buffer layer, N-type nitride layer, multiple quantum well layer, electronic barrier layer, p-type nitride layer and multiple transparency conducting layers, successively face connects for first substrate, template layer, buffer layer, N-type nitride layer, multiple quantum well layer, electronic barrier layer, p-type nitride layer and multiple transparency conducting layers, wherein, multiple transparency conducting layers include at least gold doping category or the Ga of semiconductor element2O3Layer.Deep ultraviolet LED structure proposed by the present invention and preparation method thereof has the advantages that promote deep ultraviolet LED structure luminous efficiency and practicability is stronger.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of deep ultraviolet LED structure and preparation method thereof.
Background technology
AlGaN base deep-UV light-emitting diodes are a kind of novel solid-state UV light sources, relative to traditional ultraviolet mercury lamp,
Base is ultraviolet to have small, light-weight, low in energy consumption, long lifespan, environmental-friendly, emission wavelength continuously adjustable etc. all various excellent
Therefore point obtains extensive concern in ultraviolet related application field, and start to penetrate into some traditional application fields of mercury lamp.
But since defect concentration is high, multiple quantum well layer area polarity effect is relatively strong, empty in high Al contents AlGaN sills
Cave injection efficiency it is low the problems such as, and since the reflectance factor of nitride epitaxial layer and air differs greatly caused total reflection
The photon of problem, the outgoing of LED (Light Emitting Diode, light emitting diode) multiple quantum well layer luminescent layer is inhaled again by material
Wave guide mode is received or is formed, final only a small number of photon energy is emitted in air, leads to the drop of nitride LED external quantum efficiency
It is low, that is, reduce the luminous efficiency of deep ultraviolet LED structure.
It is the emphasis of those skilled in the art's concern in view of this, how to solve the above problems.
Invention content
In view of this, the purpose of the present invention is to provide a kind of deep ultraviolet LED structure, to solve deep ultraviolet in the prior art
The relatively low problem of the luminous efficiency of LED structure.
Another object of the present invention is to provide a kind of deep ultraviolet LED structure production methods, deep in the prior art to solve
The relatively low problem of the luminous efficiency of ultraviolet LED structure.
To achieve the goals above, technical solution used in the embodiment of the present invention is as follows：
On the one hand, an embodiment of the present invention provides a kind of deep ultraviolet LED structure, the deep ultraviolet LED structure includes first
Substrate, template layer, buffer layer, N-type nitride layer, multiple quantum well layer, electronic barrier layer, p-type nitride layer and multiple transparent
Conductive layer, it is first substrate, the template layer, the buffer layer, the N-type nitride layer, the multiple quantum well layer, described
Successively face connects for electronic barrier layer, the p-type nitride layer and the multiple transparency conducting layer, wherein the multiple transparent
Conductive layer includes at least gold doping category or the Ga of semiconductor element2O3Layer.
Further, the multiple transparency conducting layer mixes copper Ga including first2O3Layer, simple substance layers of copper and second mix copper
Ga2O3Layer, the p-type nitride layer, described first mix copper Ga2O3Layer, the simple substance layers of copper and second mix copper Ga2O3Layer is successively
Face connects.
Further, the multiple transparency conducting layer mixes zinc Ga including first2O3Layer, simple substance layers of copper and second mix zinc
Ga2O3Layer, the p-type nitride layer, described first mix copper Ga2O3Layer, the simple substance layers of copper and second mix copper Ga2O3Layer is successively
Face connects.
Further, the deep ultraviolet LED structure further includes N electrode and P electrode, the N electrode and the N-type nitride
The one side far from the buffer layer of layer connects, and the P electrode is with the multiple transparency conducting layer far from the p-type nitride
The one side connection of layer.
Further, the deep ultraviolet LED structure further includes N electrode, P electrode, the second substrate and back of the body layer gold, the P
Electrode, second substrate and the back of the body layer gold successively face connect, the P electrode far from second substrate one side with
The electrically conducting transparent level connection, the N electrode are connect with the one side far from the buffer layer of the N-type nitride layer.
Further, the deep ultraviolet LED structure further includes N electrode, P electrode, substrate and salient point, the N electrode with
The one side far from the buffer layer of the N-type nitride layer connects, and the P electrode is with the transparency conducting layer far from described
The one side of p-type nitride layer connects, the salient point be located at the P electrode and the substrate and the N electrode and the substrate it
Between.
Further, the p-type nitride layer includes p-type GaN layer and p-type AlGaN layer, the electronic barrier layer, the P
Successively face connects for type AlGaN layer, the p-type GaN layer and the transparency conducting layer.
Further, the thickness of the electronic barrier layer includes 25nm, and the thickness of the p-type AlGaN layer includes 75nm, institute
The thickness for stating p-type GaN layer includes 20nm.
On the other hand, the embodiment of the present invention additionally provides a kind of deep ultraviolet LED structure production method, the deep ultraviolet LED
Construction manufacturing method includes：
Epitaxial growth template layer, buffer layer, N-type nitride layer and multiple quantum well layer successively on substrate；
Grow electronic barrier layer and p-type nitride layer successively on the multiple quantum well layer；
Multiple transparency conducting layers are grown on the p-type nitride layer；
P electrode and N are made using formal dress chip manufacture technique or vertical chip processing technology or flip-chip processing technology
Electrode.
Further, described to include the step of growing multiple transparency conducting layers on the p-type nitride layer：
Copper and Ga2O3 are sputtered on the p-type nitride layer using magnetron sputtering apparatus, mix zinc Ga to form first2O3
Layer；
Zinc Ga is mixed described first2O3Copper is sputtered on layer, to form simple substance layers of copper；
Copper and Ga2O3 are sputtered in the simple substance layers of copper, mix zinc Ga to form second2O3Layer.
Compared with the prior art, the invention has the advantages that：
The present invention provides a kind of deep ultraviolet LED structures and preparation method thereof, wherein the deep ultraviolet LED structure includes the
One substrate, template layer, buffer layer, N-type nitride layer, multiple quantum well layer, electronic barrier layer, p-type nitride layer and multiple
Bright conductive layer, the first substrate, template layer, buffer layer, N-type nitride layer, multiple quantum well layer, electronic barrier layer, p-type nitride layer
And successively face connects multiple transparency conducting layers, wherein multiple transparency conducting layers include at least gold doping category or semiconductor element
Ga2O3Layer.On the one hand, due to Ga2O3Energy gap be 4.9ev, after gold doping category or semiconductor element, energy gap becomes larger,
It can realize light extraction not extinction, promote deep ultraviolet LED structure luminous efficiency.On the other hand, electrically conducting transparent provided in this embodiment
Layer includes multilayer, and the luminous efficiency of multi-layer transparent conductive layer is more excellent, and practicability is stronger.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment cited below particularly, and coordinate
Appended attached drawing, is described in detail below.
Description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 shows the formal dress deep ultraviolet LED structure that the embodiment of the present invention provides.
Fig. 2 shows the vertical deep ultraviolet LED structures that the embodiment of the present invention provides.
Fig. 3 shows the upside-down mounting deep ultraviolet LED structure that the embodiment of the present invention provides.
Fig. 4 shows the flow chart for the deep ultraviolet LED structure production method that the embodiment of the present invention provides.
Fig. 5 shows the flow chart of the sub-step of the step S103 in Fig. 4 that the embodiment of the present invention provides.
Icon：100- deep ultraviolet LED structures；The first substrates of 110-；120- template layers；130- buffer layers；140-N types nitrogenize
Nitride layer；150- multiple quantum well layers；151- quantum well layers；152- barrier layers；160- electronic barrier layers；170-P type AlGaN layers；
180-P type GaN layers；190- first mixes copper Ga2O3Layer；200- simple substance layers of copper；210- second mixes copper Ga2O3Layer；220-P electrodes；
230-N electrodes；The second substrate layers of 240-；250- carries on the back layer gold；260- salient points；270- substrates.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Below in conjunction with attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Usually exist
The component of the embodiment of the present invention described and illustrated in attached drawing can be arranged and be designed with a variety of different configurations herein.Cause
This, the detailed description of the embodiment of the present invention to providing in the accompanying drawings is not intended to limit claimed invention below
Range, but it is merely representative of the selected embodiment of the present invention.Based on the embodiment of the present invention, those skilled in the art are not doing
The every other embodiment obtained under the premise of going out creative work, shall fall within the protection scope of the present invention.
It should be noted that：Similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined, then it further need not be defined and explained in subsequent attached drawing in a attached drawing.Meanwhile the present invention's
In description, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " connected ", " connection " shall be understood in a broad sense,
It for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be mechanical connection, can also be electricity
Connection；It can be directly connected, can also can be indirectly connected through an intermediary the connection inside two elements.For
For those skilled in the art, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.It ties below
Attached drawing is closed, is elaborated to some embodiments of the present invention.In the absence of conflict, following embodiment and embodiment
In feature can be combined with each other.
Fig. 1 is please referred to, an embodiment of the present invention provides a kind of deep ultraviolet LED structure 100, the deep ultraviolet LED structure 100 packets
Include the first substrate 110, template layer 120, buffer layer 130, N-type nitride layer, multiple quantum well layer 150, electronic barrier layer 160, p-type
Nitride layer and multiple transparency conducting layers, the first substrate 110, template layer 120, buffer layer 130, N-type nitride layer, Multiple-quantum
Successively face connects for well layer 150, electronic barrier layer 160, p-type nitride layer and multiple transparency conducting layers.
Specifically, in the present embodiment, the first substrate 110 includes Sapphire Substrate, silicon substrate, silicon carbide substrates, metal
The various LED substrates such as substrate, homo-substrate, the present embodiment do not do any restriction.
Further, template layer 120, also, the growth deep ultraviolet LED junction that the present embodiment uses are epitaxially grown on the substrate
The equipment of structure 100 includes that (Metal-organic Chemical Vapor Deposition, Organometallic close high temperature MOCVD
Object chemical gaseous phase deposition), MBE (Molecular Beam Epitaxy, molecular beam epitaxy), the equipment such as magnetron sputtering.Wherein, if
The standby minimum temperature that can be born is no less than 1200 DEG C.
It should be noted that in the present embodiment, template layer 120 includes AlN template layers 120, of course, in others one
In a little examples, template layer 120 may also comprise other materials layer, and the present embodiment does not do this any restriction.
Further, the epitaxial growth buffer 130 on template layer 120, wherein the present embodiment uses AlGaN superlattices
Buffer layer 130.Also, the method for grown buffer layer 130 provided in this embodiment is to utilize trimethyl scab (TMGa), trimethyl aluminium
(TMAL), as reaction gas, H2 is carrier gas for silane, CP2-Mg and ammonia, and first the superlattices of growth thin layer buffer on substrate
Layer 130.
Then the epitaxial growth N-type nitride layer on buffer layer 130, wherein in the present embodiment, N-type nitride layer packet
N-type AlGaN layer is included, of course, in some other embodiments, N-type nitride layer may be other nitride layers, such as
Shape GaN layer, the present embodiment do not do this any restriction, also, in the present embodiment, and the thickness of N-type nitride layer is
2.5um。
Further, after making N-type nitride layer, epitaxial growth multiple quantum well layer 150 is needed, it is in the present embodiment, more
Quantum well layer 150 includes 150 active layer of AlGaN multiple quantum well layers.Also, multiple quantum well layer 150 is by the AlxGa1- in 5 periods
XN/AlxGa1-xN quantum well layers 151 and barrier layer 152 are constituted, AlxGa1-xN quantum well layers 151 and AlxGa1-xN barrier layers
152 thickness in monolayer is respectively 3.5 and 12.5nm.It is about 1100-1200 to select the growth temperature of suitable AlN and AlGaN layer
DEG C, reaction pressure 7000pa, NH3 flow is 1000ml/min.For AlxGa1-xN multiple quantum well layers 150,3 kinds of LED's
The flow of TMAL (trimethyl aluminium) is held at 160mL/min, and the LED of corresponding 270,290,300nm, TMGa flows are respectively
50,58,72ml/min.
Further, after multiple quantum well layer 150 completes, need in Quantum Well continued growth electronic barrier layer 160
With p-type nitride layer.Wherein, in the present embodiment, p-type nitride layer includes p-type GaN layer 180 and p-type AlGaN layer, wherein
Successively face connects for electronic barrier layer 160, p-type AlGaN layer, p-type GaN layer 180 and transparency conducting layer.It should be noted that this
The electronic barrier layer 160 that embodiment provides can be N-type AlGaN electronic barrier layers 160, or p-type AlGaN electronic blockings
Layer 160.The thickness of electronic barrier layer 160 includes 25nm, and the thickness of p-type AlGaN layer includes 75nm, the thickness of p-type GaN layer 180
Including 20nm.
Further, after growth electronic barrier layer 160 and p-type nitride layer, the multiple transparency conducting layers of continued growth, and
After growing multiple hyaline layers, the making of P electrode 220 and N electrode 230 is carried out.
It illustrates below：
As the first realization method of the present embodiment, the present embodiment makes P electrode 220 using formal dress chip manufacture technique
With N electrode 230.Wherein, electronic barrier layer 160 is p-type AlGaN electronic barrier layers 160, and in p-type AlGaN electronic barrier layers
Growing P-type AlGaN and p-type GaN layer 180 successively on 160, while growing multi-layer transparent conductive layer.
Wherein, it should be noted that in the present embodiment, gold doping category or semiconductor are included at least in multiple transparency conducting layers
The Ga of element2O3Layer.On the one hand, due to Ga2O3Energy gap be 4.9ev, after gold doping category or semiconductor element, forbidden band is wide
Degree becomes larger, and can realize light extraction not extinction, promotes 100 luminous efficiency of deep ultraviolet LED structure.On the other hand, the present embodiment provides
Transparency conducting layer include multilayer, the luminous efficiency of multi-layer transparent conductive layer is more excellent, and practicability is stronger.
For example, multiple transparency conducting layers mix copper Ga2O3 layers 190, simple substance layers of copper 200 including first and second mix copper
Ga2O3 layers 210, wherein magnetron sputtering apparatus cosputtering Ni metal and Ga2O3 about 100nm on p-type nitride layer are used,
First copper Ga2O3 layers 190 are mixed to be formed, then mixes on copper Ga2O3 layers 190 then splash-proofing sputtering metal Cu 3nm first, connecing
It using magnetron sputtering apparatus cosputtering Ni metal and Ga2O3 about 100nm, to make p-type nitride layer, first mix copper
Ga2O3 layers 190, simple substance layers of copper 200 and second mix copper Ga2O3 layers 210, and face connects successively.
Alternatively, multiple transparency conducting layers mix zinc Ga including first2O3Layer, simple substance layers of copper 200 and second mix zinc Ga2O3Layer,
Wherein, the Ga2O3 film 80nm for mixing Zn are grown on p-type nitride layer using molecular beam epitaxial device, mix zinc to form first
Ga2O3Layer, mixes zinc Ga followed by molecular beam epitaxial device first2O3Zn film 5nm are grown on layer, are then using molecule
Beam epitaxy equipment grows the Ga2O3 film 80nm for mixing Zn, to make p-type nitride layer, first mix zinc Ga2O3Layer, simple substance zinc layers with
And second mix zinc Ga2O3Face connects layer successively.
Of course, in some other embodiments, transparency conducting layer may be to mix other metals or semiconductor or lead
The Ga of electrical good oxide2O3Layer, such as mix Zn, Mg, Au, Ag etc. the semiconductors such as various metals or Si, Ge or ITO etc. are led
The Ga of electrical good oxide2O3Layer.
Further, N electrode 230 is connect with the one side of the separate buffer layer 130 of N-type nitride layer, P electrode 220 with it is more
The one side of the separate p-type nitride layer of a transparency conducting layer connects, from into formal dress deep ultraviolet LED structure 100.
As second of realization method of the present embodiment, the present embodiment makes P electrode 220 using vertical chip processing technology
With N electrode 230.Wherein, electronic barrier layer 160 is p-type AlGaN electronic barrier layers 160, and in p-type AlGaN electronic barrier layers
Growing P-type AlGaN and p-type GaN layer 180 successively on 160, while growing multi-layer transparent conductive layer.
For example, multiple transparency conducting layers mix copper Ga2O3 layers 190, simple substance layers of copper 200 including first and second mix copper
Ga2O3 layers 210, wherein magnetron sputtering apparatus cosputtering Ni metal and Ga2O3 about 100nm on p-type nitride layer are used,
First copper Ga2O3 layers 190 are mixed to be formed, then mixes on copper Ga2O3 layers 190 then splash-proofing sputtering metal Cu 3nm first, connecing
It using magnetron sputtering apparatus cosputtering Ni metal and Ga2O3 about 100nm, to make p-type nitride layer, first mix copper
Ga2O3 layers 190, simple substance layers of copper 200 and second mix copper Ga2O3 layers 210, and face connects successively.
Alternatively, multiple transparency conducting layers mix zinc Ga including first2O3Layer, simple substance layers of copper 200 and second mix zinc Ga2O3Layer,
Wherein, the Ga2O3 film 80nm for mixing Zn are grown on p-type nitride layer using molecular beam epitaxial device, mix zinc to form first
Ga2O3Layer, mixes zinc Ga followed by molecular beam epitaxial device first2O3Zn film 5nm are grown on layer, are then using molecule
Beam epitaxy equipment grows the Ga2O3 film 80nm for mixing Zn, to make p-type nitride layer, first mix zinc Ga2O3Layer, simple substance zinc layers with
And second mix zinc Ga2O3Face connects layer successively.
Also, deep ultraviolet LED structure 100 also wraps the second substrate and back of the body layer gold 250, P electrode 220, the second substrate and the back of the body
Successively face connects layer gold 250, and the one side far from the second substrate of P electrode 220 is connect with electrically conducting transparent level, N electrode 230 and N
The one side of the separate buffer layer 130 of type nitride layer connects, i.e., P electrode 220 also acts as the effect of bonding, from dark purple into formal dress
Outer LED structure 100.
As the third realization method of the present embodiment, the present embodiment makes P electrode 220 using flip-chip processing technology
With N electrode 230.Wherein, electronic barrier layer 160 is N-type AlGaN electronic barrier layers 160, and in N-type AlGaN electronic barrier layers
Growing P-type AlGaN and p-type GaN layer 180 successively on 160, while growing multi-layer transparent conductive layer.
For example, multiple transparency conducting layers mix copper Ga2O3 layers 190, simple substance layers of copper 200 including first and second mix copper
Ga2O3 layers 210, wherein magnetron sputtering apparatus cosputtering Ni metal and Ga2O3 about 100nm on p-type nitride layer are used,
First copper Ga2O3 layers 190 are mixed to be formed, then mixes on copper Ga2O3 layers 190 then splash-proofing sputtering metal Cu 3nm first, connecing
It using magnetron sputtering apparatus cosputtering Ni metal and Ga2O3 about 100nm, to make p-type nitride layer, first mix copper
Ga2O3 layers 190, simple substance layers of copper 200 and second mix copper Ga2O3 layers 210, and face connects successively.
Alternatively, multiple transparency conducting layers mix zinc Ga including first2O3Layer, simple substance layers of copper 200 and second mix zinc Ga2O3Layer,
Wherein, the Ga2O3 film 80nm for mixing Zn are grown on p-type nitride layer using molecular beam epitaxial device, mix zinc to form first
Ga2O3Layer, mixes zinc Ga followed by molecular beam epitaxial device first2O3Zn film 5nm are grown on layer, are then using molecule
Beam epitaxy equipment grows the Ga2O3 film 80nm for mixing Zn, to make p-type nitride layer, first mix zinc Ga2O3Layer, simple substance zinc layers with
And second mix zinc Ga2O3Face connects layer successively.
Also, deep ultraviolet LED structure 100 further includes substrate 270 and salient point 260, and N electrode 230 is remote with N-type nitride layer
One side connection from buffer layer 130, P electrode 220 are connect with the one side of the separate p-type nitride layer of transparency conducting layer, salient point 260
Between P electrode 220 and substrate 270 and N electrode 230 and substrate 270, from into upside-down mounting deep ultraviolet LED structure 100.
Second embodiment
Referring to Fig. 1, the embodiment of the present invention additionally provides a kind of 100 production method of deep ultraviolet LED structure, the deep ultraviolet
100 production method of LED structure includes：
Step S101, on substrate epitaxial growth template layer 120, buffer layer 130, N-type nitride layer and volume successively
Sub- well layer 150.
Step S102 grows electronic barrier layer 160 and p-type nitride layer successively on multiple quantum well layer 150.
Step S103 grows multiple transparency conducting layers on p-type nitride layer.
Wherein, step S103 includes：
Sub-step S1031 sputters copper and Ga2O3 using magnetron sputtering apparatus on p-type nitride layer, is mixed with forming first
Zinc Ga2O3Layer.
Sub-step S1032 mixes zinc Ga first2O3Copper is sputtered on layer, to form simple substance layers of copper 200.
Sub-step S1033 sputters copper and Ga2O3 in simple substance layers of copper 200, mixes zinc Ga to form second2O3Layer.
Step S104 is made using formal dress chip manufacture technique or vertical chip processing technology or flip-chip processing technology
P electrode 220 and N electrode 230.
In conclusion the present invention provides a kind of deep ultraviolet LED structures and preparation method thereof, wherein the deep ultraviolet LED junction
Structure include the first substrate, template layer, buffer layer, N-type nitride layer, multiple quantum well layer, electronic barrier layer, p-type nitride layer with
And multiple transparency conducting layers, the first substrate, template layer, buffer layer, N-type nitride layer, multiple quantum well layer, electronic barrier layer, p-type
Successively face connects for nitride layer and multiple transparency conducting layers, wherein multiple transparency conducting layers include at least gold doping category or partly lead
The Ga of element of volume2O3Layer.On the one hand, due to Ga2O3Energy gap be 4.9ev, after gold doping category or semiconductor element, forbidden band
Width becomes larger, and can realize light extraction not extinction, promotes deep ultraviolet LED structure luminous efficiency.On the other hand, provided in this embodiment
Transparency conducting layer includes multilayer, and the luminous efficiency of multi-layer transparent conductive layer is more excellent, and practicability is stronger.
It should be noted that herein, the relational terms of such as " first " and " second " or the like are used merely to one
A entity or operation with another entity or operate distinguish, without necessarily requiring or implying these entities or operation it
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to
Cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or setting
Standby intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in the process, method, article or apparatus that includes the element.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.It should be noted that：Similar label and letter exist
Similar terms are indicated in following attached drawing, therefore, once being defined in a certain Xiang Yi attached drawing, are then not required in subsequent attached drawing
It is further defined and is explained.
Claims (10)
1. a kind of deep ultraviolet LED structure, which is characterized in that the deep ultraviolet LED structure includes the first substrate, template layer, buffering
Layer, N-type nitride layer, multiple quantum well layer, electronic barrier layer, p-type nitride layer and multiple transparency conducting layers, first lining
Bottom, the template layer, the buffer layer, the N-type nitride layer, the multiple quantum well layer, the electronic barrier layer, the P
Successively face connects for type nitride layer and the multiple transparency conducting layer, wherein the multiple transparency conducting layer, which includes at least, to be mixed
The Ga of metal or semiconductor element2O3Layer.
2. deep ultraviolet LED structure as described in claim 1, which is characterized in that the multiple transparency conducting layer is mixed including first
Copper Ga2O3Layer, simple substance layers of copper and second mix copper Ga2O3Layer, the p-type nitride layer, described first mix copper Ga2O3Layer, it is described
Simple substance layers of copper and second mix copper Ga2O3Face connects layer successively.
3. deep ultraviolet LED structure as described in claim 1, which is characterized in that the multiple transparency conducting layer is mixed including first
Zinc Ga2O3Layer, simple substance layers of copper and second mix zinc Ga2O3Layer, the p-type nitride layer, described first mix copper Ga2O3Layer, it is described
Simple substance layers of copper and second mix copper Ga2O3Face connects layer successively.
4. deep ultraviolet LED structure as described in claim 1, which is characterized in that the deep ultraviolet LED structure further includes N electrode
Connect with the one side far from the buffer layer of P electrode, the N electrode and the N-type nitride layer, the P electrode with it is described
The one side far from the p-type nitride layer of multiple transparency conducting layers connects.
5. deep ultraviolet LED structure as described in claim 1, which is characterized in that the deep ultraviolet LED structure further include N electrode,
P electrode, the second substrate and back of the body layer gold, successively face connects for the P electrode, second substrate and the back of the body layer gold, the P
The one side far from second substrate of electrode is connect with the electrically conducting transparent level, the N electrode and the N-type nitride layer
Far from the buffer layer one side connect.
6. deep ultraviolet LED structure as described in claim 1, which is characterized in that the deep ultraviolet LED structure further include N electrode,
P electrode, substrate and salient point, the N electrode are connect with the one side far from the buffer layer of the N-type nitride layer, the P
Electrode is connect with the one side far from the p-type nitride layer of the transparency conducting layer, and the salient point is located at the P electrode and institute
It states between substrate and the N electrode and the substrate.
7. deep ultraviolet LED structure as described in claim 1, which is characterized in that the p-type nitride layer include p-type GaN layer with
P-type AlGaN layer, the electronic barrier layer, the p-type AlGaN layer, the p-type GaN layer and the transparency conducting layer successively face
Connection.
8. deep ultraviolet LED structure as claimed in claim 7, which is characterized in that the thickness of the electronic barrier layer includes 25nm,
The thickness of the p-type AlGaN layer includes 75nm, and the thickness of the p-type GaN layer includes 20nm.
9. a kind of deep ultraviolet LED structure production method, which is characterized in that the deep ultraviolet LED structure production method includes：
Epitaxial growth template layer, buffer layer, N-type nitride layer and multiple quantum well layer successively on substrate；
Grow electronic barrier layer and p-type nitride layer successively on the multiple quantum well layer；
Multiple transparency conducting layers are grown on the p-type nitride layer；
P electrode and N electrode are made using formal dress chip manufacture technique or vertical chip processing technology or flip-chip processing technology.
10. deep ultraviolet LED structure production method as claimed in claim 9, which is characterized in that described in the p-type nitride
The step of growing multiple transparency conducting layers, includes on layer：
Copper and Ga2O3 are sputtered on the p-type nitride layer using magnetron sputtering apparatus, mix zinc Ga to form first2O3Layer；
Zinc Ga is mixed described first2O3Copper is sputtered on layer, to form simple substance layers of copper；
Copper and Ga2O3 are sputtered in the simple substance layers of copper, mix zinc Ga to form second2O3Layer.
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