CN108807256B - Display device - Google Patents

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Publication number
CN108807256B
CN108807256B CN201710888168.4A CN201710888168A CN108807256B CN 108807256 B CN108807256 B CN 108807256B CN 201710888168 A CN201710888168 A CN 201710888168A CN 108807256 B CN108807256 B CN 108807256B
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Prior art keywords
electrode
segment
display device
section
length
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CN201710888168.4A
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CN108807256A (en
Inventor
林俊贤
石建中
谢朝桦
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Innolux Corp
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Innolux Display Corp
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Priority to US15/968,878 priority Critical patent/US10446716B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The display device comprises a substrate, a first electrode arranged on the substrate, a second electrode having a first section and a second section, wherein the first section is arranged on a first side of the first electrode, the second section is arranged on a second side of the first electrode, the second side is opposite to the first side, and a protective layer overlapping the first section and the second section, wherein the length of the first section is less than that of the second section. The display device further comprises a light emitting component arranged on the substrate.

Description

Display device
Technical Field
The present disclosure relates to a display apparatus, and more particularly, to a display apparatus using a fluid transfer (fluidtransfer) process.
Background
Conventional led transfer techniques, such as inkjet printing (inkjetprinting) or pick-and-place (pick-and-place), for led display devices perform well for certain applications, however, these conventional led transfer techniques cannot effectively transfer leds directly, and there is room for improvement in process yield and cost. Compared with the conventional transfer techniques, the fluid transfer process can efficiently perform direct transfer of the light emitting diode, and the fluid transfer process is to bring the light emitting diode into the opening of the substrate by using a fluid, so that the light emitting diode is electrically connected with the driving layer exposed by the opening of the substrate.
Although the existing display devices using light emitting diodes in a fluid transfer process are adequate for their intended purposes, they have not yet been completely satisfactory in every aspect, and thus there is still a need for a display device using a fluid transfer process.
Disclosure of Invention
According to some embodiments, a display device is provided. The display device includes a substrate, and a first electrode disposed on the substrate. The display device also includes a second electrode having a first section and a second section, wherein the first section is located on a first side of the first electrode, the second section is located on a second side of the first electrode, and the second side is opposite to the first side. The display device further comprises a protective layer, wherein the protective layer is overlapped with the first section and the second section, and the length of the first section is smaller than that of the second section. In addition, the display device includes a light emitting element disposed on the substrate.
Drawings
The aspects of the embodiments of the present disclosure can be better understood with reference to the following detailed description when considered in conjunction with the accompanying drawings. It is noted that, according to industry standard practice, various components may not be drawn to scale. In fact, the dimensions of the various elements may be arbitrarily increased or reduced for clarity of discussion.
FIG. 1A is a schematic cross-sectional view illustrating a display device, according to some embodiments;
FIG. 1B is a partial top view illustrating a display device according to some embodiments, where FIG. 1A is a schematic cross-sectional view of the display device along line A-A' of FIG. 1B;
fig. 2A is a schematic sectional view illustrating a display device of a comparative example;
fig. 2B is a partial top view illustrating a display device of a comparative example, wherein fig. 2A is a schematic sectional view of the display device along a line a-a' in fig. 2B.
The component numbers in the figures illustrate:
100. 100' to a display device;
101-a substrate;
102-driving layer;
103 to a first electrode;
103a to a first side;
103b to a second side;
105 to a second electrode;
107. 107' -protective layer;
109-a substrate;
110. 110' to an opening;
111-a directional structure;
113 to a third electrode;
115 to a fourth electrode;
120-light emitting component;
c1, C1' first section;
c2, C2' to a second section;
d1, D1 ', D2, D2' distance;
e1, E1' to the third section;
e2, E2' to a fourth section;
g1-gap;
o1 to the fifth section;
o2 to the sixth section.
Detailed Description
The following provides many different embodiments, or examples, for implementing different components of the provided display device. Specific examples of components and configurations thereof are described below to simplify the embodiments of the present disclosure. These are, of course, merely examples and are not intended to limit the embodiments of the disclosure. For example, references in the description to a first element being formed on a second element may include embodiments in which the first and second elements are in direct contact, and may also include embodiments in which additional features are formed between the first and second elements such that the first and second elements are not in direct contact. In addition, embodiments of the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Some variations of the embodiments are described below. Like reference numerals are used to identify like components in the various figures and described embodiments. It will be understood that additional operations may be provided before, during, and after the methods described below, and that some of the recited operations may be substituted or deleted for other embodiments of the methods.
Fig. 1A is a schematic cross-sectional diagram illustrating a display device 100, according to some embodiments. Fig. 1B is a partial top view of the display device 100 according to some embodiments (fig. 1B does not show the substrate 109 and the directional structure 111 of the light emitting element 120 in fig. 1A for clarity of the top view), wherein fig. 1A is a schematic cross-sectional view of the display device 100 along a line a-a' in fig. 1B.
According to some embodiments, as shown in fig. 1A, a substrate 101 is provided, a driving layer 102 is disposed on the substrate 101, and a first electrode 103, a second electrode 105 and a protective layer 107 are disposed on the driving layer 102. In some embodiments, the substrate 101 may be a glass substrate or a plastic substrate, and the driving layer 102 may include a plurality of thin-film transistors (TFTs), capacitors, conductive layers, contact windows, insulating layers, or other semiconductor devices. In addition, the driving layer 102 may be formed by a deposition process, a printing (stabilizing) process, an injection (injecting) process or other suitable processes.
Referring to fig. 1A and 1B, the second electrode 105 surrounds at least a portion of the first electrode 103, and the first electrode 103 and the second electrode 105 are spaced apart. In addition, the protection layer 107 covers a portion of the second electrode 105, in other words, the protection layer 107 has an opening 110, and the opening 110 exposes the first electrode 103 and at least a portion of the second electrode 105.
Specifically, as shown in fig. 1A, the left side of the first electrode 103 is defined as a first side 103a, and the right side of the first electrode 103 is defined as a second side 103 b. The protective layer 107 covers the first section C1 of the second electrode 105 at the first side 103a of the first electrode 103, and the protective layer 107 covers the second section C2 of the second electrode 105 at the second side 103b of the first electrode 103. On the other hand, the opening 110 of the protection layer 107 exposes the third segment E1 of the second electrode 105 on the first side 103a of the first electrode 103, and the opening 110 of the protection layer 107 exposes the fourth segment E2 of the second electrode 105 on the second side 103b of the first electrode 103.
In some embodiments, as shown in fig. 1B, the second electrode 105 is a ring-shaped structure with a notch in the top view, and the width (i.e., the length in the cross-sectional view) of the ring-shaped structure is a certain value, that is, in any cross-sectional view perpendicular to the surface of the substrate 101, the second electrodes 105 located on two opposite sides of the first electrode 103 have the same length, so that the sum of the lengths of the first segment C1 and the third segment E1 of the second electrode 105 is equal to the sum of the lengths of the second segment C2 and the fourth segment E4 of the second electrode 105.
It is noted that in the present embodiment, the length of the first segment C1 is less than that of the second segment C2, and the length of the third segment E1 is greater than that of the fourth segment E2. In other words, the opening 110 of the protection layer 107 is not symmetrical with respect to the center line of the first electrode 103.
In some embodiments, the first electrode 103 and the second electrode 105 may be made of a metal having good conductivity, such as gold (Au), silver (Ag), copper (Cu), platinum (Pt), nickel (Ni), tin (Sn), magnesium (Mg), a combination of the foregoing, or other conductive materials, and the protective layer 107 may be made of an insulating inorganic material, such as silicon oxide or silicon nitride, or other suitable insulating organic materials. In addition, the first electrode 103 and the second electrode 105 may be formed separately by different processes, or formed simultaneously by the same process, and the first electrode 103 and the second electrode 105 may be formed by a deposition process, a printing process, an injection process, or other suitable processes. In some embodiments, the protection layer 107 and the opening 110 thereof may be formed by deposition, photolithography and etching processes.
Referring again to FIG. 1A, light emitting element 120 is placed on substrate 101 using a fluid transfer process in which a fluid is directed along X1The light emitting elements 120 are oriented to fit into the openings 110 in the protective layer 107, and one opening 110 can receive one light emitting element 120.
In some embodiments, the light emitting assembly 120 includes a substrate 109, a directional structure 111, a third electrode 113, and a fourth electrode 115. The third electrode 113 and the fourth electrode 115 are located on a first side of the light emitting element 120, and the directional structure 111 is located on a second side of the light emitting element 120 opposite to the first side. In addition, the third electrode 113 and the fourth electrode 115 are spaced apart, and the fourth electrode 115 surrounds at least a portion of the third electrode 113.
In addition, the light emitting element 120 may be a light-emitting diode (LED), especially a flip-chip LED. In some embodiments, the substrate 109 of the light emitting assembly 120 may be made of silicon, silicon carbide (SiC), gallium nitride (GaN), silicon dioxide (SiO)2) Sapphire, or a combination of the foregoing. The processes and materials of the third electrode 113 and the fourth electrode 115 are similar or identical to those of the first electrode 103 and the second electrode 105, and thus, the description thereof is not repeated. In some embodiments, the material of the directional structure 111 may be lattice matched to the material of the substrate 109,and the directional structure 111 is a protruding structure at the midpoint of the base 109.
Specifically, the first side of the light emitting element 120 (i.e., the side where the third electrode 113 and the fourth electrode 115 are located) faces the substrate 101, and the second side of the light emitting element 120 (i.e., the side where the directional structure 111 is located) is away from the substrate 101, so as to complete the display device 100. By the above arrangement, the third electrode 113 of the light emitting element 120 can be electrically connected to the first electrode 103 on the driving layer 102, and the fourth electrode 115 of the light emitting element 120 can be electrically connected to the second electrode 105 on the driving layer 102.
In some embodiments, the third electrode 113 directly contacts the first electrode 103, and the fourth electrode 115 directly contacts the second electrode 105. It is noted that the third electrode 113 is of a first conductivity type, the fourth electrode 115 is of a second conductivity type, and the first conductivity type is opposite to the second conductivity type. Specifically, the third electrode 113 and the fourth electrode 115 are electrically connected to the doped semiconductor material layers with opposite conductivity types in the light emitting element 120, respectively. In the present embodiment, the first conductive type is P-type, and the second conductive type is N-type. In other embodiments, the first conductivity type is N-type and the second conductivity type is P-type.
In addition, by providing the directional structure 111 in the light emitting element 120, the possibility of the light emitting element 120 turning over in the fluid transfer process can be reduced, such that the third electrode 113 and the fourth electrode 115 of the light emitting element 120 face the substrate 101, and the directional structure 111 is located on a side of the light emitting element 120 away from the substrate 101.
Note that when the fluid is along X1When the light emitting element 120 is placed in the opening 110, the light emitting element 120 is easily deviated from the midpoint of the opening 110 by the direction of the fluid, so that the light emitting element 120 contacts the protective layer 107 on the second side 103b of the first electrode 103. In the display device 100 in fig. 1A, the light emitting element 120 has a gap G1 with the protective layer 107 on the first side 103a of the first electrode 103, and there is no gap between the light emitting element 120 and the protective layer 107 on the second side 103b of the first electrode 103.
In the embodiment, since the lengths of the protective layer 107 covering the second electrodes 105 on the left and right sides (i.e., the first side 103a and the second side 103b) of the first electrode 103 are different, that is, the lengths of the second electrodes 105 exposed by the openings 110 on the left and right sides of the first electrode 103 are different, the third electrode 113 of the light emitting device 120 can cover more than 70% of the area of the first electrode 103 after the fluid transfer process is performed.
In other words, although the light emitting element 120 is easily deviated from the center of the opening 110 due to the direction of the fluid, so that the center line of the third electrode 113 is not aligned with the center line of the first electrode 103, by setting the position of the opening 110, the third electrode 113 can still cover more than 70% of the area of the first electrode 103 (for example, 77.9% of the area of the first electrode 103 covered by the third electrode 113), which can generate a better brightness performance, thereby improving the overall performance of the display device 100.
Furthermore, after the fluid transfer process is performed, in the display apparatus 100, a distance D1 may be maintained between the fourth electrode 115 of the light emitting element 120 and the first electrode 103, and a distance D2 may be maintained between the third electrode 113 of the light emitting element 120 and the second electrode 105. The distance D1 is the shortest distance between the fourth electrode 115 and the first electrode 103, and the distance D2 is the shortest distance between the third electrode 113 and the second electrode 105. It is noted that the distance D1 and the distance D2 are long enough to avoid the short circuit problem.
In the present embodiment, as shown in fig. 1A, the fluid direction X1 is from the position of the distance D1 to the position of the distance D2, and the distance D1 is smaller than the distance D2. In some embodiments, distances D1 and D2 are at least greater than about 2 μm to ensure that short-circuiting problems do not occur.
In addition, the fourth electrode 115 has a fifth section O1 on the first side 103a, and the fifth section O1 is a portion of the fourth electrode 115 overlapping the second electrode 105 on the first side 103 a. The fourth electrode 115 has a sixth section O2 on the second side 103b, and the sixth section O2 is a portion of the fourth electrode 115 overlapping the second electrode 105 on the second side 103 b. In the present embodiment, the length of the fifth section O1 is less than the length of the sixth section O2.
In addition, the distance D1 and the distance D2 are also called shift margin (shift margin) of the fluid transfer process, and in order to avoid short circuit, the shift margin is increased to improve the yield of the product when the process of the display device 100 is planned.
Fig. 2A is a schematic cross-sectional view illustrating a display device 100' of a comparative example. Fig. 2B is a partial top view illustrating a display device 100 ' of a comparative example (fig. 2B does not show the substrate 109 and the directional structure 111 of the light emitting element 120 in fig. 2A for clarity of the top view), wherein fig. 2A is a schematic cross-sectional view of the display device 100 ' along a line a-a ' in fig. 2B.
As shown in fig. 1A and 2A, the position of the protective layer 107 ' of the display apparatus 100 ' is different from the position of the protective layer 107 of the display apparatus 100, in other words, the opening 110 ' of fig. 2A is different from the opening 110 of fig. 1A.
Specifically, in the display device 100 of fig. 1A, the lengths of the protective layer 107 covering the second electrodes 105 on the left and right sides (i.e., the first side 103a and the second side 103b) of the first electrode 103 are different, and the lengths of the second electrodes 105 exposed by the openings 110 on the left and right sides of the first electrode 103 are different. However, in the display device 100 ' of fig. 2A, the lengths of the protective layer 107 ' covering the second electrodes 105 on the left and right sides of the first electrode 103 are the same, and the lengths of the second electrodes 105 exposed by the openings 110 ' on the left and right sides of the first electrode 103 are also the same.
In the display device 100 ' of fig. 2A, the protective layer 107 ' covers the first section C1 ' of the second electrode 105 located at the first side 103a of the first electrode 103, and the protective layer 107 ' covers the second section C2 ' of the second electrode 105 located at the second side 103b of the first electrode 103. On the other hand, the opening 110 ' of the protection layer 107 ' exposes the third segment E1 ' of the second electrode 105 on the first side 103a of the first electrode 103, and the opening 110 ' of the protection layer 107 exposes the fourth segment E2 ' of the second electrode 105 on the second side 103b of the first electrode 103.
As shown in fig. 2A, the sum of the lengths of the first segment C1 'and the third segment E1' of the second electrode 105 is equal to the sum of the lengths of the second segment C2 'and the fourth segment E4' of the second electrode 105. Notably, the length of the first segment C1 'is equal to the length of the second segment C2', and the length of the third segment E1 'is equal to the length of the fourth segment E2'. In other words, the opening 110 ' of the protective layer 107 ' is left-right symmetric when viewed with the center line of the first electrode 103 of the display device 100 ' as a symmetry axis.
Except for the above-mentioned differences in the positions of the openings 100 and 100', the materials and processes of the respective elements in fig. 2A and 2B are the same as or similar to those of the corresponding elements in fig. 1A and 1B, and thus, the description thereof will not be repeated.
As shown in FIG. 2A, when the fluid is along X1When the light emitting element 120 is placed in the opening 110, the light emitting element 120 is easily deviated from the midpoint of the opening 110 by the direction of the fluid, so that the light emitting element 120 contacts the protective layer 107' on the second side 103b of the first electrode 103. In the display device 100 'in fig. 2A, the light emitting element 120 has a gap G1 with the protective layer 107' on the first side 103a of the first electrode 103, and there is no gap between the light emitting element 120 and the protective layer 107 on the second side 103b of the first electrode 103.
Since the opening 110' of FIG. 2A is the same size as the opening 110 of FIG. 1A, the length of the gap G1 of FIG. 2A is equal to the length of the gap G1 of FIG. 1A.
In the comparative example, as shown in fig. 2A and 2B, the flow direction of the fluid causes the light emitting element 120 to deviate from the midpoint of the opening 110 'of the protective layer 107', resulting in the third electrode 113 covering only a portion of the first electrode 103 (70% or more of the area of the first electrode 103 not covered by the third electrode 113, for example, 67.8% of the area of the first electrode 103 covered by the third electrode 113). As a result, the distance D1 'between the fourth electrode 115 of the light emitting element 120 and the first electrode 103 is too close, and the distance D2' between the third electrode 113 of the light emitting element 120 and the second electrode 105 is too close, which is likely to cause a short circuit problem.
Referring again to fig. 1A and 1B, in order to overcome the problem that the display device 100 ' of fig. 2A is easily short-circuited, the opening 110 ' of the protective layer 107 ' of fig. 2A is directed toward X2The direction is moved a distance to form the protection layer 107 with the opening 110 in fig. 1A. Notably, the flow is along X1The light emitting assembly 120 is placed into the opening 110 and the opening 110' in the direction of X2Direction and X1The direction is opposite.
In some embodiments, the opening 110 'of the protective layer 107' is oriented towards X2The distance of the direction shift is in the range of about 0.5 μm to about 1.2 μm, particularly in the range of about 0.8 μm to about 1.1 μm, and as a result, as shown in fig. 1A, the length of the first segment C1 is less than the length of the second segment C2, and the length of the third segment E1 is greater than the length of the fourth segment E2. In some embodiments, the difference in length between the first segment C1 and the second segment C2 is in the range of about 1 μm to about 2.4 μm, particularly in the range of about 1.6 μm to about 2.2 μm.
It is noted that, compared to the display apparatus 100 'of fig. 2A (the length of the first segment C1 of the display apparatus 100' is the same as the length of the second segment C2), the length of the first segment C1 of the display apparatus 100 of fig. 1A is smaller than the length of the first segment C1 'of fig. 2A, and the length of the second segment C2 of fig. 1A is larger than the length of the second segment C2' of fig. 2A. Furthermore, the length of the third segment E1 of FIG. 1A is greater than the length of the third segment E1 'of FIG. 2A, and the length of the fourth segment E2 of FIG. 1A is less than the length of the fourth segment E2' of FIG. 2A.
Referring to fig. 1A and 2A, in the embodiment of fig. 1A, since the position of the opening 110 of the protection layer 107 is adjusted, the moving degree of the fluid transfer process of the light emitting element 120 is increased, thereby avoiding the problem of short circuit between the first electrode 103 and the fourth electrode 115, and between the second electrode 105 and the third electrode 113, for example, compared to the display apparatus 100 ' of fig. 2A, the distance D1 between the fourth electrode 115 and the first electrode 103 of the light emitting element 120 of fig. 1A is farther, and the distance D2 between the third electrode 113 and the second electrode 105 of the light emitting element 120 is also farther, that is, the distance D1 is greater than the distance D1 ', and the distance D2 is greater than the distance D2 '.
According to some embodiments, as shown in fig. 1A, since the position of the opening 110 of the protection layer 107 is adjusted, after the light emitting element 120 is placed into the opening 110 by using the fluid transfer process, the third electrode 113 of the light emitting element 120 covers at least 70% of the area of the first electrode 203, so that the light emitting element 120 can generate better brightness performance, thereby improving the overall performance of the display apparatus 100.
The opening of the protective layer is moved a distance, and the moving direction of the opening is opposite to the direction of the fluid of the subsequent light-emitting component, so that the electrodes of the light-emitting component can still be accurately aligned with the corresponding electrodes on the substrate respectively under the condition that the light-emitting component is influenced by the fluid and deviates from the central position of the opening. In addition, the embodiment of the disclosure can improve the moving accuracy of the fluid transfer process of the light-emitting component, thereby avoiding the problem of short circuit between the electrode of the light-emitting component and the electrode on the substrate.
The components of several embodiments are summarized above so that those skilled in the art to which the disclosure pertains can more clearly understand the aspects of the embodiments of the disclosure. Those skilled in the art should appreciate that they may readily use the disclosed embodiments as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims (8)

1. A display device, comprising:
a substrate;
a first electrode disposed on the substrate;
a second electrode having a first segment and a second segment, wherein the first segment is located on a first side of the first electrode, the second segment is located on a second side of the first electrode, and the second side is opposite to the first side, wherein the second electrode further has a third segment and a fourth segment, the third segment is located on the first side, and the fourth segment is located on the second side;
a protective layer overlapping the first section and the second section, the protective layer exposing the third section and the fourth section, wherein the length of the first section is less than the length of the second section, and the length of the third section is greater than the length of the fourth section; and
and the light-emitting component is arranged on the substrate, wherein the light-emitting component is a light-emitting diode, the light-emitting diode comprises a third electrode and a fourth electrode which are positioned at the same side of the light-emitting diode, and the first electrode is electrically connected with the third electrode, and the second electrode is electrically connected with the fourth electrode.
2. The display device of claim 1, wherein a difference in length between the first segment and the second segment is in a range of 1 μm to 2.4 μm.
3. The display device of claim 1, wherein a difference in length between the first segment and the second segment is in a range of 1.6 μm to 2.2 μm.
4. A display device as claimed in claim 1, characterized in that the fourth electrode surrounds at least part of the third electrode.
5. The display device according to claim 1, wherein the third electrode covers at least 70% or more of an area of the first electrode.
6. The display device of claim 1, wherein a sidewall of the light emitting diode on the second side contacts the passivation layer.
7. The display device of claim 1, wherein the fourth electrode has a fifth segment and a sixth segment, the fifth segment is located at the first side, the sixth segment is located at the second side, the second electrode overlaps the fifth segment and the sixth segment, and a length of the fifth segment is less than a length of the sixth segment.
8. The display device of claim 1, wherein the third electrode is of a first conductivity type and the fourth electrode is of a second conductivity type, wherein the first conductivity type and the second conductivity type are opposite conductivity types.
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