CN108807213B - Micro light-emitting diode transfer method and micro light-emitting diode transfer device - Google Patents
Micro light-emitting diode transfer method and micro light-emitting diode transfer device Download PDFInfo
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- CN108807213B CN108807213B CN201710286407.9A CN201710286407A CN108807213B CN 108807213 B CN108807213 B CN 108807213B CN 201710286407 A CN201710286407 A CN 201710286407A CN 108807213 B CN108807213 B CN 108807213B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention provides a method for transferring a micro-device. A carrier substrate provided with a plurality of first electrodes and a plurality of minute elements is provided. The micro-components are separated from each other and are electrically connected with the first electrodes respectively. The receiving substrate and the carrier substrate are relatively close. The receiving substrate is provided with a plurality of second electrodes, and the second electrodes are opposite to the first electrodes in electrical property. A first voltage and a second voltage are applied to two first electrodes partially adjacent to each other, so that the minute element is released from the carrier substrate to the receiving substrate and bonded to the receiving substrate. The first voltage is different from the second voltage. In addition, a micro-component transferring apparatus is also proposed.
Description
Technical Field
The present invention relates to a transferring method and a transferring apparatus, and more particularly, to a transferring method and a transferring apparatus for a micro-component.
Background
The Micro L ED Display device has advantages of high brightness, high contrast, wide viewing angle, long lifetime and low power consumption, and is the key point for the development of future Display technologies.
At present, a mass transfer method is required to transfer the micro-leds from the carrier substrate to the receiving substrate by a transfer head with high alignment accuracy. Because the size of the transfer transmission head must be precisely matched with the size of the transferred light emitting diode to achieve the transfer with high alignment precision, it is still difficult to perform the transfer, and therefore, the transfer alignment deviation often occurs in the transfer process, thereby causing the transfer process error. Therefore, how to achieve the purpose of transferring a large amount of tiny devices and simultaneously improve the alignment accuracy to reduce the error in the transferring process is one of the issues of concern in the industry at present.
Disclosure of Invention
The invention provides a micro-element transferring method and a micro-element transferring device, which have higher alignment accuracy to reduce errors in the transferring process.
The method for transferring a minute element of the present invention comprises the following steps. Providing a carrier substrate, wherein a plurality of first electrodes and a plurality of micro elements are arranged on the carrier substrate, and the micro elements are separated from each other and are respectively electrically connected with the first electrodes; the receiving substrate and the carrier substrate are relatively close to each other, a plurality of second electrodes are arranged on the receiving substrate, and the second electrodes are opposite to the first electrodes in electrical property; and applying a first voltage and a second voltage to the two partially adjacent first electrodes to release the micro-component from the carrier substrate to the receiving substrate and bond the micro-component to the receiving substrate, wherein the first voltage is different from the second voltage.
In an embodiment of the invention, while the first voltage and the second voltage are applied to the two partially adjacent first electrodes, the third voltage and the fourth voltage are applied to the two partially adjacent second electrodes.
The invention relates to a micro-element transfer device, which comprises a carrier substrate and a receiving substrate. The carrier substrate is suitable for bearing a plurality of tiny elements and comprises a plurality of first electrodes, wherein the tiny elements are separated from each other and are respectively electrically connected with the first electrodes. The two adjacent first electrodes are suitable for receiving a first voltage and a second voltage, and the first voltage is different from the second voltage. The receiving substrate comprises a plurality of second electrodes, wherein the second electrodes are opposite to the first electrodes in electrical property, and two adjacent second electrodes are suitable for receiving a third voltage and a fourth voltage.
In an embodiment of the invention, each of the micro devices is a light emitting diode.
In an embodiment of the invention, the first voltage and the second voltage are the same or opposite in electrical property.
In an embodiment of the invention, the carrier substrate has a first surface and a second surface opposite to each other, the second surface is relatively adjacent to the receiving substrate, the micro-device is disposed on the second surface, and the first electrode is disposed on the first surface or the second surface, or a part of the first electrode is disposed on the first surface and another part of the first electrode is disposed on the second surface.
In an embodiment of the invention, the receiving substrate has a third surface and a fourth surface opposite to each other, the fourth surface is relatively adjacent to the carrier substrate, and the second electrodes are disposed on the third surface or the fourth surface, or a portion of the second electrodes is disposed on the third surface and another portion of the second electrodes is disposed on the fourth surface.
In an embodiment of the invention, the receiving substrate is further provided with a plurality of transfer heads, and the transfer heads respectively directly contact the micro devices.
In an embodiment of the invention, the carrier substrate is a sapphire substrate, and the receiving substrate is a glass substrate.
In an embodiment of the invention, the carrier substrate is a glass substrate, and the receiving substrate is a driving substrate.
In an embodiment of the invention, the two adjacent second electrodes are adapted to receive a third voltage and a fourth voltage.
In an embodiment of the invention, one of the plurality of first electrodes receiving the second voltage surrounds the plurality of first electrodes receiving the first voltage.
In view of the above, the method for transferring a micro-device according to the present invention is to apply a first voltage and a second voltage different from each other to the adjacent first electrodes after the receiving substrate and the carrier substrate are relatively close to each other, so that the micro-device carrier substrate is released to the receiving substrate and bonded to the receiving substrate, thereby completing the operation of transferring the micro-device. That is, in the present stage of transferring the minute element, the carrier substrate assumes a charged state. Therefore, by applying different voltages to two adjacent first electrodes, the alignment precision in the transfer process can be improved to reduce the transfer error, thereby achieving the characteristic of higher alignment accuracy.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIGS. 1A to 1C are schematic cross-sectional views illustrating a method for transferring a micro-device according to an embodiment of the invention;
FIGS. 1D and 1E are schematic top views of the carrier substrate and receiving substrate of FIG. 1A, respectively;
FIG. 2 is a schematic cross-sectional view of a micro-device transferring apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a micro-component transferring apparatus according to another embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a micro-component transferring apparatus according to another embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a micro-component transferring apparatus according to another embodiment of the present invention;
FIGS. 6A-6B are schematic diagrams of the carrier substrate of the micro-device transfer apparatus of FIG. 5, shown in a bottom view and a top view, respectively;
FIGS. 6C to 6D are schematic top and bottom views of the receiving substrate of the transferring apparatus for micro-components shown in FIG. 5;
FIGS. 7A and 7B are schematic diagrams illustrating the voltage applied to the transferring device of micro-elements as a function of time according to another embodiment of the present invention;
FIGS. 8A to 8D are schematic bottom views illustrating a method for transferring a micro-device according to another embodiment of the present invention;
fig. 9A and 9B are schematic top views of a carrier substrate and a receiving substrate of a micro-component transferring apparatus according to another embodiment of the invention.
Description of reference numerals:
100. 100A, 100B, 100C, 100D: micro-component transfer device
110: carrier substrate
120: receiving substrate
130: micro-element
140: transfer head
150. 150A, 150C, 150D1, 150D2, 150E, 150F: a first electrode
160. 160B, 160C, 160D1, 160D2, 160F: second electrode
C1A, C1B, C1C, C2A, C2B, C2C, C3A, C3B, C3C, C4A, C4B, C4C: line
S1: first surface
S2: second surface
S3: third surface
S4: the fourth surface
V1: first voltage
V2: second voltage
V3: third voltage
V4: a fourth voltage
Detailed Description
Fig. 1A to 1C are cross-sectional views illustrating a micro-device transferring method according to an embodiment of the invention, fig. 1D and 1E are top views illustrating a carrier substrate and a receiving substrate of fig. 1A, respectively, for convenience of explanation, the micro-devices 130 are omitted from fig. 1D, referring to fig. 1A and 1D, according to the micro-device transferring method of the embodiment, first, a carrier substrate 110 is provided, wherein a plurality of first electrodes 150 and a plurality of micro-devices 130 are disposed on the carrier substrate 110, the carrier substrate 110 has a first surface S1 and a second surface S2 opposite to each other, the first electrodes 150 and the micro-devices 130 are disposed on the second surface S2, and the micro-devices 130 are separated from each other and electrically connected to the first electrodes 150, here, the carrier substrate 110 is, for example, a sapphire substrate (sapphire substrate), and each of the micro-devices 130 is a light Emitting Diode (L light Emitting Diode, ED L), but not limited thereto.
Next, referring to fig. 1A and fig. 1E, a receiving substrate 120 is provided, and the receiving substrate 120 and the carrier substrate 110 are relatively close to each other, wherein a plurality of second electrodes 160 are disposed on the receiving substrate 120. The receiving substrate 120 has a third surface S3 and a fourth surface S4 opposite to each other, wherein the fourth surface S4 and the second surface S2 of the carrier substrate 110 are opposite to each other, and the second electrodes 160 are separated from each other and disposed on the fourth surface S4. In particular, the second electrode 160 is electrically opposite to the first electrode 150. Here, the receiving substrate 120 is, for example, a glass substrate, but not limited thereto.
Thereafter, referring to fig. 1B and fig. 1C, a first voltage V1 and a second voltage V2 are applied to the two adjacent first electrodes 150, and a third voltage V3 and a fourth voltage V4 are applied to the two adjacent second electrodes 160, so that the micro-device 130 is released from the carrier substrate 110 to the receiving substrate 120 and bonded to the receiving substrate 120, wherein the first voltage V1 is different from the second voltage V2.
By the difference between the first voltage V1 and the second voltage V2, each first electrode 150 can generate different attraction forces to each corresponding micro-device 130, so as to improve the alignment accuracy during the transferring process to reduce the transferring error, thereby achieving the characteristic of higher alignment accuracy. In addition, since the second electrodes 160 and the first electrodes 150 have opposite electrical properties, each of the micro-devices 130 disposed on the carrier substrate 110 can be attracted by each of the second electrodes 160 disposed on the receiving substrate 120 for transferring. In detail, different voltages are applied to the two corresponding electrodes, an electric field in a specific direction is generated between the two corresponding electrodes, and the micro-device 130 is guided to the specific direction by the influence of the electric field. In addition, the voltage may be applied by directly providing a voltage to the electrodes, or may be induced by the electromagnetic coil to generate an induced voltage, but the method is not limited thereto.
More specifically, the first voltage V1 and the second voltage V2 of the present embodiment are the same in electrical property, for example, the first voltage V1 and the second voltage V2 are both positive voltages, but the voltage value of the first voltage V1 is different from the voltage value of the second voltage V2; alternatively, the first voltage V1 and the second voltage V2 are opposite in electrical polarity, for example, the first voltage V1 is a positive voltage, and the second voltage V2 is a negative voltage, but the voltage value of the first voltage V1 may be the same as or different from the voltage value of the second voltage V2. For example, if the first voltage V1 is a positive voltage and the second voltage V2 is a positive voltage, the third voltage V3 is a negative voltage and the fourth voltage V4 is a negative voltage, the micro-device 130 can be transferred by the variation of the voltage difference between the first voltage V1 and the second voltage V2. On the other hand, if the first voltage V1 is a positive voltage and the second voltage V2 is a negative voltage, the third voltage V3 is a negative voltage and the fourth voltage V4 is a positive voltage, which can further improve the alignment accuracy of the second electrode 160 and the micro-device 130 to reduce errors during the transferring process.
Referring to fig. 1D, the first electrode 150 disposed on the second surface S2 of the carrier substrate 110 is electrically connected to the first electrode 150 to which the same voltage is applied according to the first voltage V1 and the second voltage V2 applied thereto, so as to form a circuit C1A and a circuit C2A. As such, the first voltage V1 may be applied to one portion of the first electrodes 150 through the line C1A at the same time, and the second voltage V2 may be applied to the other portion of the first electrodes 150 through the line C2A at the same time, so that the voltage may be efficiently supplied to the first electrodes 150. Similarly, referring to fig. 1E again, the second electrode 160 disposed on the fourth surface S4 of the receiving substrate 120 may be electrically connected to the second electrode 160 applied with the same voltage according to the third voltage V3 and the fourth voltage V4 applied thereto, so as to form a circuit C3A and a circuit C4A. In this way, the third voltage V3 may be simultaneously applied to one portion of the second electrodes 160 through the line C3A and the fourth voltage V4 may be simultaneously applied to the other portion of the second electrodes 160 through the line C4A, so that the voltage may be efficiently supplied to the second electrodes 160.
It should be noted that besides the above-mentioned manner of applying the voltage, in other embodiments, a plurality of different voltage values may be preset to be applied to the first electrode 150 and the second electrode 160. That is, the first electrodes 150 on the carrier substrate 110 can receive voltages of the same electrical property but different voltage values, voltages of different electrical properties but the same or different voltage values, or voltages of partially electrical property but different voltage values. Similarly, the second electrode 160 on the receiving substrate 120 also receives voltages of the same electrical property but different voltage values, voltages of different electrical properties but the same or different voltage values, or voltages of partially same electrical property but different voltage values. In short, the first electrode 150 and the second electrode 160 can achieve the purpose of the transferred micro-device 130 through various combinations of electrical properties and voltage values.
In addition, in other embodiments not shown, the Voltage configuration applied to the electrodes may be a Progressive Voltage Arrangement (Progressive Voltage Arrangement), such as a Progressive Voltage increase or a Progressive Voltage decrease. Therefore, the phenomenon that the transient electric field effect is unstable and the transfer process is shifted due to asynchronous signals between the electrode and the micro-device 130 can be further avoided by the progressive guiding effect of the electrode on the micro-device 130, so that the occurrence rate of the transfer offset is minimized and the alignment accuracy is improved.
In addition, in other embodiments not shown, the voltage applied to the electrodes may be configured to have multiple voltage levels, such as first-up and then-down voltage, or first-down and then-up voltage. In this way, after the electrode or the transfer head (140 in fig. 3) is supplied with a high voltage or a low voltage, or when electrostatic charges are absorbed to the electrode or the transfer head due to the surrounding environment, the residual charges can be eliminated by providing voltages with opposite electrical properties through the configuration of multiple voltage levels, so that the next transfer process can be performed smoothly.
In structure, referring to fig. 1B again, the micro-device transferring apparatus 100 of the present embodiment includes a carrier substrate 110 and a receiving substrate 120. The carrier substrate 110 is suitable for carrying the tiny components 130 and includes first electrodes 150, wherein the tiny components 130 are separated from each other and electrically connected to the first electrodes 150, respectively. The adjacent two first electrodes 150 are adapted to receive different first voltage V1 and second voltage V2. The receiving substrate 120 includes second electrodes 160, wherein the second electrodes 160 are opposite to the first electrodes 150, and two adjacent second electrodes 160 are adapted to receive a third voltage V3 and a fourth voltage V4.
Although the carrier substrate 110 and the receiving substrate 120 are referred to as a sapphire substrate and a glass substrate, respectively, in other embodiments, the carrier substrate 110 may be a glass substrate, and the receiving substrate 120 may also be a driving substrate. In other words, after the micro-devices 130 are transferred to the receiving substrate 120, the receiving substrate 120 can be used as a carrier substrate 110 in another process of transferring the micro-devices 130, so that the micro-devices 130 can be driven by transferring the micro-devices 130 to another receiving substrate 120 (i.e. a driving substrate, such as a Thin-Film Transistor (TFT) substrate) through the same transfer process.
It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Fig. 2 is a schematic cross-sectional view of a micro-component transferring apparatus according to another embodiment of the present invention. Referring to fig. 1B and fig. 2, the micro-component transferring apparatus 100A of the present embodiment is similar to the micro-component transferring apparatus 100 of fig. 1B, and the difference between the two is: the micro-device 130 of the present embodiment is disposed on the second surface S2 of the carrier substrate 110, and the first electrode 150A is disposed on the first surface S1. In other words, in the transferring apparatus 100A, the first electrode 150A disposed on the carrier substrate 110 may be provided by an external electrode carrier. The first electrode 150A is electrically connected to the micro-device 130 by disposing a conductive via on the carrier substrate 110, for example, so that the first electrode 150A is electrically connected to the micro-device 130, or by forming a capacitor with the micro-device 130 through an external electrode to generate an induced voltage. The present invention is not limited to the manner of electrical connection or generation of the induced voltage.
Fig. 3 is a schematic cross-sectional view of a micro-component transferring apparatus according to another embodiment of the present invention. Referring to fig. 1B and fig. 3, the micro-device transferring apparatus 100B of the present embodiment is similar to the micro-device transferring apparatus 100 of fig. 1B, and the difference between the two is: the second electrode 160B of the present embodiment is disposed on the third surface S3 of the receiving substrate 120. In addition, in the embodiment, a plurality of transfer heads 140 are further disposed on the receiving substrate 120, the transfer heads 140 respectively directly contact the micro-devices 130, and each of the second electrodes 160B is electrically connected to each of the transfer heads 140. In other words, in the transferring apparatus 100B, the second electrode 160B disposed on the receiving substrate 120 may be provided by an external electrode carrier. In this way, the micro-device 130 can be electrically connected to the transfer head 140 disposed on the fourth surface S4 through the second electrode 160B disposed on the third surface S3, so that the micro-device 130 is adsorbed by the transfer head 140 to be released from the carrier substrate 110 to the receiving substrate 120 and bonded to the receiving substrate 120 to complete the transfer of the micro-device 130.
Fig. 4 is a schematic cross-sectional view of a micro-component transferring apparatus according to another embodiment of the present invention. Referring to fig. 3 and 4, the micro-device transferring apparatus 100C of the present embodiment is similar to the micro-device transferring apparatus 100B of fig. 3, and the difference between them is: the first electrode 150C of the present embodiment is disposed on the first surface S1 of the carrier substrate 110. In other words, in the transferring apparatus 100C, the first electrode 150C disposed on the carrier substrate 110 and the second electrode 160C disposed on the receiving substrate 120 are provided by the external electrode carrier, respectively, so as to release the micro-device 130 from the carrier substrate 110 to the receiving substrate 120 and bond the micro-device to the receiving substrate 120.
Fig. 5 is a schematic cross-sectional view of a micro-component transferring apparatus according to another embodiment of the present invention. Referring to fig. 3 and 5, the micro-device transferring apparatus 100D of the present embodiment is similar to the micro-device transferring apparatus 100B of fig. 3, and the difference between them is: in this embodiment, the first electrode 150D1 is disposed on the first surface S1, and the first electrode 150D2 is disposed on the second surface S2. The second electrode 160D1 is disposed on the third surface S3, and the second electrode 160D2 is disposed on the fourth surface S4. In this way, the carrier substrate 110 and the external electrode carrier can respectively provide voltages to the first electrode 150D1 and the first electrode 150D2, and the receiving substrate 120 and the external electrode carrier can respectively provide voltages to the second electrode 160D1 and the second electrode 160D2, so as to save the power supply of the carrier substrate 110 and the receiving substrate 120.
Fig. 6A to 6B are schematic bottom and top views of the carrier substrate of the microdevice transfer apparatus of fig. 5. Referring to fig. 5, fig. 6A and fig. 6B, in the present embodiment, the first electrode 150D1 disposed on the first surface S2 of the carrier substrate 110 and the first electrode 150D2 disposed on the second surface S1 of the carrier substrate 110 form a circuit C1B and a circuit C2B, respectively. In this way, the first electrode 150D1 and the first electrode 150D2 respectively disposed on the first surface S1 and the second surface S2 can apply the first voltage V1 and the second voltage V2 respectively through the line C1B and the line C2B.
Similarly, fig. 6C to 6D are schematic top and bottom views of the receiving substrate of the micro-device transferring apparatus shown in fig. 5. Referring to fig. 5, fig. 6C and fig. 6D, in the present embodiment, the second electrode 160D1 disposed on the third surface S3 of the receiving substrate 120 and the second electrode 160D2 disposed on the fourth surface S4 of the receiving substrate 120 form a circuit C3B and a circuit C4B, respectively. In this way, the third voltage V3 and the fourth voltage V4 can be respectively applied to the second electrode 160D1 and the second electrode 160D2 respectively disposed on the third surface S3 and the fourth surface S4 through the line C3B and the line C4B.
In addition, in other embodiments not shown, those skilled in the art should refer to the description of the foregoing embodiments to design the circuit layout on the carrier substrate and the receiving substrate according to the principles of applying a first voltage and a second voltage to the adjacent first electrodes, the first voltage being different from the second voltage, and the second electrode being opposite to the first electrode, so as to achieve the desired technical effect.
FIGS. 7A and 7B are schematic diagrams illustrating the variation of the voltage applied to the transferring device with time according to another embodiment of the present invention. Referring to fig. 1B and fig. 7A, in the present embodiment, the micro-device transferring apparatus 100 shown in fig. 1B can apply the voltage applied to the corresponding electrode shown in fig. 7A. In other words, in the present embodiment, the first voltage V1 and the second voltage V2 are applied to the first electrode 150, and the third voltage V3 and the fourth voltage V4 are applied to the second electrode 160, which may be applied or stopped to apply voltages to the electrodes over time. For example, during the transferring, a first voltage V1 and a second voltage V2 larger than the first voltage V1 are applied to the first electrode 150, and a third voltage V3 and a fourth voltage V4 smaller than the third voltage V3 are applied to the second electrode 160. After the transfer process, the voltage application to each electrode can be stopped to continue the next stage of the transfer process, as shown in fig. 7A.
Referring to fig. 1B, fig. 7A and fig. 7B, in the present embodiment, the micro-device transferring apparatus 100 shown in fig. 1B can apply the voltage applied to the corresponding electrode shown in fig. 7B. In other words, the manner of applying the voltage shown in fig. 7B can further change the magnitude of the applied voltage with time in the same process as compared with the manner of applying the voltage shown in fig. 7A. For example, during the transferring process, the first voltage V1 with a constant value can be applied to the first electrode 150 and the third voltage V3 with a constant value can be applied to the second electrode 160, and the second voltage V2 with time variation can be applied to the first electrode 150 and the fourth voltage V4 with time variation can be applied to the second electrode 160, so that the alignment accuracy between the second electrode 160 and the micro-device 130 can be further improved to reduce the error during the transferring process.
Fig. 8A to 8D are schematic bottom views respectively illustrating a method for transferring a micro-device according to another embodiment of the invention. Referring to fig. 8A to 8D, in the present invention, only the first voltage V1 and the second voltage V2 may be applied to two partially adjacent first electrodes 150E, so that the micro-device 130 is released from the carrier substrate 110 to the receiving substrate 120 and bonded to the receiving substrate 120. For example, in the present embodiment, one of the first electrodes 150E receiving the second voltage V2 surrounds the first electrode 150E receiving the first voltage V1. Therefore, during the transferring process, the micro-devices 130 at the positions (1,1), (1,3), (3,1) and (3,3) can be transferred first, as shown in FIG. 8A. Then, the micro-devices 130 at the positions (2,1), (2,3), (4,1) and (4,3) are transferred, as shown in fig. 8B. Then, the micro-devices 130 at the positions (1,2), (1,4), (3,2) and (3,4) are transferred, as shown in fig. 8C. Finally, the micro-devices 130 at the positions (2,2), (2,4), (4,2) and (4,4) are transferred, as shown in fig. 8D, to complete the transfer of the micro-devices 130. In this way, the transfer of the microdevice 130 can be performed by applying only a single voltage.
In the transferring process of the micro-device 130 of fig. 8A to 8D, four transferring steps (i.e. applying four voltages) are adopted to accomplish the transferring with high accuracy, but the invention is not limited thereto. Fig. 9A and 9B are schematic top views of a carrier substrate and a receiving substrate of a micro-component transferring apparatus according to another embodiment of the invention. Referring to fig. 9A and 9B, the first electrode 150F disposed on the second surface S2 of the carrier substrate 110 may be electrically connected to the first electrode 150F applied with the same voltage according to the first voltage V1 and the second voltage V2, respectively, to form a circuit C1C and a circuit C2C. Similarly, the second electrode 160F disposed on the fourth surface S4 of the receiving substrate 120 may be electrically connected to the second electrode 160F applied with the same voltage according to the third voltage V3 and the fourth voltage V4, respectively, to form the line C3C and the line C4C. As such, the first voltage V1 and the second voltage V2 are simultaneously applied to the first electrode 150F and the second electrode 160F via these lines, and the third voltage V3 and the fourth voltage V4 are simultaneously applied to the second electrode 160F and the first electrode 150F, respectively.
In summary, the method for transferring a micro device of the present invention is to apply a voltage to only one substrate after the receiving substrate and the carrier substrate are relatively close to each other, for example, to apply a first voltage and a second voltage to adjacent first electrodes; alternatively, voltages, such as a first voltage and a second voltage, which are different voltages, are applied to the adjacent first electrodes, and a third voltage and a fourth voltage are applied to the adjacent second electrodes, so that the micro-device carrier substrate is released to the receiving substrate and bonded to the receiving substrate, thereby completing the micro-device transferring operation. That is, in the present transfer of the minute elements, at least one of the electrodes on the carrier substrate and the receiving substrate assumes a charged state. Therefore, by applying different voltages to two adjacent first electrodes, the alignment precision in the transfer process can be improved to reduce the transfer error, thereby achieving the characteristic of higher alignment accuracy.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (15)
1. A method for transferring a micro Light Emitting Diode (LED) is characterized by comprising the following steps:
providing a carrier substrate, wherein a plurality of first electrodes and a plurality of micro light-emitting diodes are arranged on the carrier substrate, and the micro light-emitting diodes are separated from each other and are respectively electrically connected with the plurality of first electrodes;
enabling a receiving substrate to be relatively close to the carrier substrate, wherein a plurality of second electrodes are arranged on the receiving substrate, and the electrical property of the plurality of second electrodes is opposite to that of the plurality of first electrodes; and
and applying a first voltage and a second voltage to a part of two adjacent first electrodes to release the micro light-emitting diodes from the carrier substrate to the receiving substrate and bond the micro light-emitting diodes to the receiving substrate, wherein the first voltage is different from the second voltage.
2. The method of claim 1, wherein the first voltage is the same or opposite to the second voltage.
3. The method of claim 1, wherein the carrier substrate has a first surface and a second surface opposite to each other, the second surface is relatively adjacent to the receiving substrate, the micro light-emitting diodes are disposed on the second surface, and the first electrodes are disposed on the first surface or the second surface, or a portion of the first electrodes are disposed on the first surface and another portion of the first electrodes are disposed on the second surface.
4. The method of claim 1, wherein the receiving substrate has a third surface and a fourth surface opposite to each other, the fourth surface is relatively adjacent to the carrier substrate, and the plurality of second electrodes are disposed on the third surface or the fourth surface, or a portion of the plurality of second electrodes is disposed on the third surface and another portion of the plurality of second electrodes is disposed on the fourth surface.
5. The method as claimed in claim 1, wherein a plurality of transfer heads are disposed on the receiving substrate, and the plurality of transfer heads directly contact the plurality of micro light emitting diodes, respectively.
6. The method for transferring micro light-emitting diodes according to claim 1, further comprising:
applying a third voltage and a fourth voltage to a portion of two adjacent second electrodes while applying the first voltage and the second voltage to the portion of two adjacent first electrodes.
7. A micro light emitting diode transfer device, comprising:
the carrier substrate is suitable for bearing a plurality of micro light-emitting diodes and comprises a plurality of first electrodes, wherein the micro light-emitting diodes are separated from each other and are respectively electrically connected with the first electrodes, one part of each two adjacent first electrodes is suitable for receiving a first voltage and a second voltage, and the first voltage is different from the second voltage; and
the receiving substrate comprises a plurality of second electrodes, wherein the plurality of second electrodes are opposite to the plurality of first electrodes in electrical property.
8. The micro led transfer device of claim 7, wherein the first voltage is the same or opposite to the second voltage.
9. The micro led transfer device of claim 7, wherein the carrier substrate has a first surface and a second surface opposite to each other, the second surface is relatively adjacent to the receiving substrate, and the plurality of micro leds are disposed on the second surface, and the plurality of first electrodes are disposed on the first surface or the second surface, or a portion of the plurality of first electrodes are disposed on the first surface and another portion of the plurality of first electrodes are disposed on the second surface.
10. The micro led transfer device of claim 7, wherein the receiving substrate has a third surface and a fourth surface opposite to each other, the fourth surface is relatively adjacent to the carrier substrate, and the plurality of second electrodes are disposed on the third surface or the fourth surface, or a portion of the plurality of second electrodes is disposed on the third surface and another portion of the plurality of second electrodes is disposed on the fourth surface.
11. The micro led transfer device of claim 7, wherein a plurality of transfer heads are further disposed on the receiving substrate, and the plurality of transfer heads directly contact the plurality of micro leds, respectively.
12. The micro led transfer device of claim 7, wherein the carrier substrate is a sapphire substrate and the receiving substrate is a glass substrate.
13. The micro led transfer device of claim 7, wherein the carrier substrate is a glass substrate and the receiving substrate is a driving substrate.
14. The micro led transfer device of claim 7, wherein two adjacent second electrodes are adapted to receive a third voltage and a fourth voltage.
15. The micro led transfer device of claim 7, wherein one of the plurality of first electrodes receiving the second voltage surrounds the plurality of first electrodes receiving the first voltage.
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| CN201710286407.9A CN108807213B (en) | 2017-04-27 | 2017-04-27 | Micro light-emitting diode transfer method and micro light-emitting diode transfer device |
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| CN109817798A (en) * | 2018-12-29 | 2019-05-28 | 惠科股份有限公司 | Display panel and its manufacturing method |
| CN111933075B (en) * | 2019-04-28 | 2022-05-10 | 华为技术有限公司 | Pixel compensation method and device |
| CN110112092B (en) * | 2019-05-20 | 2021-05-14 | 京东方科技集团股份有限公司 | Device transfer apparatus, transfer system, and transfer method |
| CN110838501B (en) * | 2019-10-23 | 2022-06-21 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
| WO2021109007A1 (en) * | 2019-12-03 | 2021-06-10 | 重庆康佳光电技术研究院有限公司 | Mass transfer method and system for semiconductor element |
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| TWI557831B (en) * | 2015-05-15 | 2016-11-11 | 友達光電股份有限公司 | Method for transferring micro device |
| CN106229287B (en) * | 2016-09-30 | 2019-04-05 | 厦门市三安光电科技有限公司 | For shifting the transposition head of microcomponent and the transfer method of microcomponent |
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