CN108806591A - Pixel arrangement, the driving method of pixel arrangement and display equipment - Google Patents
Pixel arrangement, the driving method of pixel arrangement and display equipment Download PDFInfo
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- CN108806591A CN108806591A CN201810383970.2A CN201810383970A CN108806591A CN 108806591 A CN108806591 A CN 108806591A CN 201810383970 A CN201810383970 A CN 201810383970A CN 108806591 A CN108806591 A CN 108806591A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
Abstract
The present invention relates to pixel arrangement, the driving method of pixel arrangement and display equipment.The pixel arrangement includes：Luminescent device；Driving transistor is used to drive luminescent device, the first pole of driving transistor to be coupled to the first common potential, and the anode of luminescent device is coupled in the second pole；The first transistor, control pole is for receiving first switch signal, and the control pole of driving transistor is coupled in the first pole, and the second pole is for receiving data voltage information；Boosting storage unit, it is coupled to the control pole of driving transistor and the second pole, and including the first capacitive element and the second capacitive element, wherein, first capacitive element and the second capacitive element are used for the threshold voltage information and data information of voltage of storage driving transistor, and when the first transistor ends, the voltage on the first capacitive element is for driving driving transistor.Technical solution through the invention can promote data voltage range, and then convenient for the electric current of control light-emitting component.
Description
Technical field
The present invention relates to integrated circuit fields, particularly a kind of pixel arrangement, driving pixel arrangement method and displays
Equipment.
Background technology
As the important branch of display technology, micro display is widely used in nearly eye display field, such as virtual reality
(Virtual Reality, VR) and augmented reality (Augmented Reality, AR) etc..The micro display skill of current most mainstream
Art includes：Silicon-based organic light-emitting diode (Organic Light-Emitting Diode-on Silicon, OLEDoS), silicon
Base fluid crystalline substance (Liquid Crystal on Silicon, LCoS) and micro- LED (inorganic) display technology etc..
Major defect using the display of LCoS is that operating temperature range is relatively narrow (0~45 DEG C of representative value), and requires
Built-in backlight displays contrast relatively low.OLED is all solid state active luminescent device, the wider (representative value 40 of operating temperature range
~70 DEG C), it can realize higher contrast.Micro- LED display technique is integrated highdensity microsize on a single die
LED array, can self-luminous, contrast can reach 10000:1, the response time can reach nanosecond (ns) magnitude, but shine one
Cause property is poor, and resolution ratio is relatively low.The pixel unit spacing of micro- light-emitting diode display is 20~50 microns (μm), this and OLEDoS
The pixel fineness of micro display technology (5~15 μm) is compared to also many gaps.
It is shown compared to LCoS or micro- LED, OLEDoS micro displays have wider operating temperature range, higher right
Than degree and faster response speed, the advantages such as emission uniformity is good, display resolution is high.
OLEDoS micro displays technology is driven display pixel and display using the CMOS technology of standard using monocrystalline silicon as substrate
Dynamic circuit function module such as gate driving circuit, sequence controller and data driver is integrated in a silicon single crystal wafer
On.This changes in conventional pixel technology and shows the case where screen is detached with driving circuit, can effectively reduce display device
Peripheral size, improve effective display area.
Since OLEDoS micro-displays have the resolution ratio of superelevation, elemental area is typically small, and this requires micro displays
The size of MOS transistor is smaller in pixel.However due to the influence of manufacturing process, the MOS transistor characteristic ginseng in pixel circuit
The inhomogeneities of number (such as threshold voltage) is easy to influence the performance of circuit and display.Due to the light emission luminance of OLED
Directly proportional with current density, the electric current of OLEDoS micro display pixel circuits is generally pA-nA magnitudes.Simultaneously again because of MOS crystal
Pipe size is smaller, carrier mobility is higher so that pixel circuit data voltage range is smaller, it is difficult to accurately control low ash
The corresponding low current of rank.Therefore, it in order to accurately control the corresponding glow current of each grayscale, needs to expand data electricity
Press range.
It can compensate well for the threshold voltage inhomogeneities of driving transistor using current programmed method, but
Programming time needed in the case of low grayscale low current is longer.In order to shorten programming time, the larger programming electricity that may be used
Stream；But in glow phase, program current needs to be reduced to pA-nA magnitudes that OLEDoS micro display pixel circuits can be met
Requirement.
In a kind of traditional technology, pixel circuit can be driven by subthreshold current source type pixel-driving circuit.?
The grid of sample phase, driving transistor is connected to external low reference potential VBL, and then input is programmed by peripheral circuit
Current amplifier, to storage capacitance quick charge；In the stage of holding, the grid of driving transistor is connected to external high reference electricity
Position VBH so that driving transistor grid and source voltage difference reduce and reduce program current to be operated in subthreshold region.This
Kind pixel circuit needs to increase the switch and sequential of control driving transistor grid connection external reference current potential VBL and VBH.?
In another traditional technology, the luminous electric currents of driving OLED can be reduced by the metal-oxide-semiconductor that is shunted in parallel with OLED,
But paralleling MOS pipe will increase circuit power consumption.
Therefore, current programmed mode is not suitable for high-resolution and low power consumption OLED oS micro display applications.
In a kind of traditional technology, the micro display image element circuit structure of self discharge compensation method may be used, that is, use
The load capacitance and storage capacitance being connected between driving transistor grid and source electrode form self discharge access, driving transistor
Threshold voltage information be stored in the both ends of storage capacitance；In glow phase, the threshold voltage information of storage capacitance both ends storage
It is cancelled, so as to compensation for drive transistor threshold voltage inhomogeneities；But its data voltage range is too small, it can not
Accurately control the corresponding Weak current of each grayscale of OLED.Although 4 concatenated NMOS drive transistors may be used to expand
Data voltage range, but the MOS transistor number that circuit includes is more, is unfavorable for the realization of higher resolution micro-display.
In addition, that the change of electrology characteristic and optical characteristics can occur after working long hours is old to generate OLED by OLED
To change phenomenon, shows as under identical driving current, the cut-in voltage of OLED can gradually rise, and luminous efficiency can continuously decrease, from
And display screen is led to problems such as brightness irregularities or light emission luminance decline occur.Therefore, in order to ensure the image of display device
Quality also needs to the aging of compensation OLED in OLEDoS micro display pixel circuits.
In conclusion there is an urgent need for a kind of each grayscale of luminescent device can be accurately controlled using wider data voltage range
Corresponding Weak current, and can compensate for the threshold voltage inhomogeneities of driving transistor and delay or compensate OLED's
The pixel circuit of aging.
Invention content
For problems of the prior art, the present invention promotes driving transistor by using capacitive coupling effect
Driving voltage, and then increase data voltage range.
One aspect of the present invention proposes a kind of pixel arrangement comprising：Luminescent device；Driving transistor is used for
The luminescent device is driven, the first pole of the driving transistor is coupled to described for receiving the first common potential, the second pole
The anode of luminescent device；The first transistor, for control pole for receiving first switch signal, the driving is coupled in the first pole
The control pole of transistor, and the second pole is for receiving data voltage information；Boosting storage unit, is coupled to the driving
The control pole of transistor and the second pole, and include the first capacitive element and the second capacitive element, wherein first capacitive
Element and the second capacitive element are used to store the threshold voltage information of the driving transistor and the data voltage information, and
And when the first transistor ends, the voltage on first capacitive element is for driving the driving transistor.
Another aspect of the present invention also proposed a kind of driving method for pixel arrangement, and the pixel arrangement includes driving
Dynamic transistor and boosting storage unit, the method includes：Initialize the boosting storage unit；The boosting storage unit
Store the threshold voltage information of the driving transistor；It is described when the boosting storage unit receives data voltage information
Storage unit of boosting is by the data voltage information storage in the storage unit；And the boosting storage unit is based on
Driving transistor described in the threshold voltage information and the data voltage information-driven stored, wherein the boosting is deposited
Storage unit includes the first capacitive element and the second capacitive element, and first capacitive element and the second capacitive element are for storing
The threshold voltage information and data information of voltage of the driving transistor, the voltage on first capacitive element is for driving
The driving transistor.
Another aspect of the present invention also proposed a kind of display equipment comprising：Pel array comprising be arranged in rows and
Multiple pixel arrangements of row；Data drive circuit is configured to provide the data from multiple data lines to the pel array
Information of voltage；Control circuit is configured to provide the switching signal to the pel array via multi-strip scanning line.
By using technical scheme of the present invention, it is capable of the threshold voltage inhomogeneities of preferably compensation for drive transistor,
And delay the aging of luminescent device, additionally it is possible to expand data voltage range.
Description of the drawings
In the following, the preferred embodiment of the present invention will be described in more detail in conjunction with attached drawing, wherein：
Fig. 1 is traditional pixel circuit schematic diagram；
Fig. 2 is the configuration diagram of the pixel arrangement of embodiment according to the present invention；
Fig. 3 is the schematic diagram of the pixel circuit of first embodiment according to the present invention；
Fig. 4 is the signal timing diagram of first embodiment according to the present invention；
Fig. 5 is the pixel circuit internal node voltages transient response figure of first embodiment of the invention；
Fig. 6 is that the pixel circuit of first embodiment of the invention and the data voltage of conventional pixel circuit and grayscale relationship are bent
Line comparison diagram；
Fig. 7 is the error schematic diagram of luminescent device glow current in the pixel circuit of first embodiment according to the present invention；
Fig. 8 is the error schematic diagram of luminescent device glow current in traditional pixel circuit；
Fig. 9 is the pixel circuit schematic diagram of second embodiment according to the present invention；
Figure 10 is the image element circuit structure schematic diagram of 3rd embodiment according to the present invention；
Figure 11 is the pixel circuit schematic diagram of fourth embodiment according to the present invention；
Figure 12 is the pixel circuit schematic diagram of the 5th embodiment according to the present invention；
Figure 13 is the pixel circuit schematic diagram of sixth embodiment according to the present invention；
Figure 14 is the signal timing diagram of the pixel circuit of sixth embodiment of the invention
Figure 15 is the pixel circuit schematic diagram of the 7th embodiment according to the present invention；
Figure 16 is the sequence diagram of the pixel circuit of seventh embodiment of the invention；
Figure 17 is the driving method flow chart of the pixel arrangement of embodiment according to the present invention；
Figure 18 is the Organization Chart of the display equipment of embodiment according to the present invention.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The every other embodiment that member is obtained without making creative work, shall fall within the protection scope of the present invention.
In the following detailed description, the particular implementation for being used for illustrating the application as the application part may refer to
Each Figure of description of example.In the accompanying drawings, similar reference numeral describes substantially similar component in different drawings.
Each specific embodiment of the application has carried out description detailed enough following so that has ability domain-dependent knowledge and skill
The those of ordinary skill of art can implement the technical solution of the application.It should be appreciated that other embodiments or right can also be utilized
Embodiments herein carries out structure, logic or electrical change.
Term " pixel arrangement " word refers to containing sensor devices or other devices for converting electromagnetic signal into electric signal
The electronic component of part.Transistor can refer to the transistor of any structure, such as field-effect transistor (FET) or bipolar transistor
It manages (BJT).When transistor is field-effect transistor, control pole refers to the grid of field-effect transistor, and first extremely can be
The drain electrode of field-effect transistor or source electrode, corresponding second extremely can be source electrode or the drain electrode of field-effect transistor；Work as transistor
For bipolar transistor when, control pole refers to the base stage of bipolar transistor, and first extremely can be the collection of bipolar transistor
Electrode or emitter, corresponding second extremely can be the emitter or collector of bipolar transistor.Photophore in the application
Part can be Organic Light Emitting Diode (OLED), light emitting diode with quantum dots (QLED), inorganic light-emitting diode (LED) etc.
Deng.
Fig. 1 is traditional pixel circuit schematic diagram.
As shown, pixel circuit includes driving transistor 10, transistor 11, luminescent device 12 and storage 13.
Scan control signal on scan control signal line SCAN carrys out sampled data signal line DATA for controlling switching transistor 11
Data voltage information (voltage) and store arrive storage 13.When transistor 11 ends, the electricity in storage 13
Pressure will be used for driving driving transistor 10 so that luminescent device 12 sends out the light stream of varying strength.However, pixel circuit 100 is right
The data voltage range answered is smaller, it is difficult to accurately control the corresponding low current of low grayscale.
In view of the above-mentioned problems, the present invention proposes a kind of pixel arrangement with larger data voltage range.Below with crystalline substance
Body pipe be field-effect transistor, luminescent device be Organic Light Emitting Diode for the application is described in detail.It is appreciated that
, in other embodiments, transistor can also be bipolar transistor, and luminescent device can also be quantum dot light emitting two
Other luminescent devices such as pole pipe.
Fig. 2 is the configuration diagram of the pixel arrangement of embodiment according to the present invention.
As shown in Fig. 2, pixel arrangement 200 include driving transistor 20, first switch transistor 21, luminescent device 22 with
And boosting storage unit 23, wherein boosting storage unit 23 includes the first capacitive element and the second capacitive element.
Specifically, the first pole of driving transistor 20 is used for receiving voltage signal V1 (for example, VDD), the coupling of the second pole
To the anode of luminescent device 22, control pole is coupled to the first pole of first switch transistor 21.The cathode of luminescent device 22 is used for
Receiving voltage signal V2 (for example, VSS or SCAN1).The control pole of first switch transistor 21 is for receiving the first scanning signal
SCAN1, the second pole are coupled to data signal line DATA, to which first switch transistor 21 can be in the first scanning signal SCAN1
Control under will be in its second extremely received data voltage information VDATAIt is transmitted to its first pole.
Boosting storage unit 23 is coupling between the control pole of driving transistor 20 and the second pole, with storage driving crystal
The threshold voltage information of pipe 20 and the data voltage information V receivedDATA。
In the present embodiment, the driving process of pixel arrangement 200 includes initial phase T1, V_th generation successively
Stage T2, data voltage information write phase T3 and glow phase T4.
T1：Initial phase
At this stage, the first scanning signal SCAN1 is high level so that first switch transistor 21 is connected, and then to rising
Each node in pressure storage unit 23 is initialized.
T2：The V_th generation stage
In this stage, the first scanning signal SCAN1 is still high level, and boosting storage unit 23 is configured as that crystalline substance will be driven
The threshold voltage information of body pipe 20 is stored in the both ends of the first capacitive element and the second capacitive element.
T3：Data voltage information write phase
In this stage, the first scanning signal SCAN1 is still high level, and data signal line DATA provides data voltage information
VDATA, charge to the first capacitive element and the second capacitive element, so that data voltage information VDATAIt is superimposed on
In the threshold voltage information of the driving transistor 20 of storage.
T4：Glow phase
In this stage, the first scanning signal SCAN1 is low level, and boosting storage unit 23 is configured as holding using first
Property element both ends voltage carry out the work of driving transistor 20, and form driving current IDS, and then luminescent device 22 is driven to shine.
By the coupling of the first capacitive element and the second capacitive element, correspond to data voltage write phase T3 and glow phase
The second electrode potential of T4, driving transistor 20 will increase.Correspondingly, in order to enable driving transistor 20 generates identical drive
Streaming current, the control electrode potential of driving transistor 20 need correspondingly to increase.In other words, with the control of driving transistor 20
Extremely current potential also correspondingly increases on connected data signal line, and then expands the amplitude range of data voltage information, so as to
Enough accurately control the corresponding electric current of 22 each grayscale of luminescent device.
It is illustrated with reference to one to seven pair of pixel arrangement of embodiment.
Embodiment one：
Fig. 3 is the schematic diagram of the pixel circuit of first embodiment according to the present invention.
As shown in figure 3, pixel circuit includes driving transistor 30, first switch transistor 31, second switch transistor
32, third switching transistor 33, the 4th switching transistor 34, luminescent device 35, the first capacitor 36 and the second capacitor 37.
First pole of driving transistor 30 is coupled to first electrode to receive the first common potential signal VDD, the second pole coupling
It is bonded to the anode of luminescent device 35, control pole is coupled to the first pole of first switch transistor 31.First switch transistor 31
Second pole is coupled to data signal line DATA, to receive data voltage VDATA, control pole is for receiving the first scanning signal
SCAN1.First pole of second switch transistor 32 is coupled to the second pole of driving transistor 30, and the second pole is via the first capacitance
Device 36 is coupled to the control pole of driving transistor 30, and control pole is for receiving the second scanning signal SCAN2.Similarly,
First pole of three switching transistors 33 is coupled to the second pole of driving transistor 30, and the second pole is coupled via the second capacitor 37
To the second pole of second switch transistor 32, control pole is for receiving the first scanning signal SCAN1；4th switching transistor 34
The first pole be coupled to the second pole of third switching transistor 33, the second pole is coupled to ground potential, and control pole is for receiving third
Scanning signal SCAN3 (as shown in figure 4, differed between third scanning signal SCAN3 and the second scanning signal SCAN2 one when
Clock interval).The cathode of luminescent device 35 is coupled to second electrode COM；Second electrode COM is multiplexed the first scanning signal SCAN1.
It should be understood that the control pole of third switching transistor 33 can also receive other control signals, for example, when
When three switching transistors 33 and the type difference of first switch transistor 31, in order to enable the work of two switching transistors
State is identical (that is, simultaneously turn on or end), and third switching transistor 33 can receive and the first scanning signal SCAN1 reverse phases
Scanning signal.
In the present embodiment, pixel driver process includes initial phase T1, V_th generation stage T2, number successively
According to information of voltage write phase T3 and glow phase T4.Fig. 4 is the signal timing diagram of first embodiment according to the present invention, and Fig. 5 is
The pixel circuit internal node voltages transient response figure of first embodiment of the invention.
The driving process of pixel circuit is described in detail with reference to Fig. 3, Fig. 4 and Fig. 5.
T1：Initial phase
At this stage, the first scanning signal SCAN1 and third scanning signal SCAN3 is high level so that first switch
Transistor 31, third switching transistor 33 and the conducting of the 4th switching transistor 34；Second scanning signal SCAN2 is low level, is made
Second switch transistor 32 is obtained to end.Data signal line DATA provides reference potential VREF(current potential at node A is VREF), the
One capacitor 36 and the charge of 37 both ends of the second capacitor storage pass through driving transistor 30, third switching transistor 33 and the
The branch that four switching transistors 34 are formed discharges.Since third, the 4th switching transistor 33,34 are connected at this time, so
Node B, D current potential is about 0V.The current potential of C points is determined by the capacitance of capacitor 36,37.
T2：The V_th generation stage
In this stage, the first scanning signal SCAN1 is still high level, therefore, first switch transistor 31 and third switch
Transistor 33 is still in conducting state；Second scanning signal SCAN2 and third scanning signal SCAN3 is low level so that second
Switching transistor 32 and the 4th switching transistor 34 are in cut-off state.Data signal line DATA provides reference potential VREF,
It is charged to 30 second pole of driving transistor by the first capacitor 36 and the second capacitor 37, until driving transistor 30
Control pole and the second pole between voltage difference reach its threshold voltage.Therefore, the threshold voltage information of driving transistor 30 is deposited
Storage is at 37 both ends of the first capacitor 36 and the second capacitor, and in other words, the voltage on capacitor 36,37 is equal to driving crystal
The threshold voltage V of pipe 30TH30, as shown in expression formula (1)：
Wherein, VTH30For the threshold voltage of driving transistor 30.After the completion of V_th generation, luminescent device 35
Anode potential V35AFor reference voltage VREFAnd the difference of the threshold voltage of driving transistor 30, as shown in expression formula (2)：
As shown in Figure 5, when the 4th switching transistor 34 is ended, the current potential of node B, D will be gradually lifted.
T3：Data voltage information write phase
In this stage, the first scanning signal SCAN1 keeps high level, first switch transistor 31 and third to switch crystal
Pipe 33 remains on state；Second scanning signal SCAN2 and third scanning signal SCAN3 keep low level so that the
Two switching transistors 32 and the 4th switching transistor 34 keep cut-off state.Data signal line DATA provides data voltage VDATA,
Continue to charge to the first capacitor 36 and the second capacitor 37, data voltage is superimposed upon the threshold value electricity of driving transistor 30
In pressure, and 37 both ends of the first capacitor 36 and the second capacitor are stored in, the voltage on two capacitors can be expressed as：
Wherein, CPFor the parasitic capacitance at node D, C1For the capacitance of the first capacitor 36, C2For the second capacitor 37
Capacitance.After the completion of data voltage is written, the anode potential of luminescent device 35 is：
As shown in Figure 5, when there is the write-in of data voltage information, the current potential of node A is by superposition of data information of voltage, in turn
So that the current potential of node B, C, D generate corresponding variation.
T4：Glow phase
In this stage, the first scanning signal SCAN1 and third scanning signal SCAN3 are low level so that first switch
Transistor 31, third switching transistor 33 and the 4th switching transistor 34 are in cut-off state；Second scanning signal SCAN2
For high level so that second switch transistor 32 is in the conduction state.First capacitor 36 is via 32 coupling of second switch transistor
It is bonded to the second pole of driving transistor 30, the voltage drive transistor 30 of 36 both ends of the first capacitor storage at this time works, and shape
At driving current IDS, luminescent device 35 is driven to shine.At this point, the gate source voltage and driving current I of driving transistor 30DSRespectively
It is expressed as：
Wherein,For the potential difference between glow phase driving transistor control pole and the second pole；IDSTo flow through driving
Driving current between the first pole of transistor and the second pole；W/L, I0, n and VTThe respectively breadth length ratio of driving transistor 30, leakage
Electric current, sub-threshold slope and thermal voltage.
By the coupling of the first capacitor 36 and the second capacitor 37, the second electrode potential of driving transistor 30
Rise can be expressed as：
Wherein,WithDriving transistor 30 second in respectively data voltage write phase T3 and glow phase T4
The current potential of pole；For the potential difference between 30 control pole of data voltage write phase T3 driving transistors and the second pole.By formula
7 it is found that when the second electrode potential of driving transistor 30 increases, in order to enable to generate identical driving electric for driving transistor 30
Stream, the control electrode potential of driving transistor 30 need correspondingly to increase, the data letter being connected with the control pole of driving transistor 30
Current potential also correspondingly increases on number line, and then expands data voltage range, so as to accurately control each ash of luminescent device
The corresponding Weak current of rank.This can also correspondingly be observed in Figure 5.Referring to FIG. 5, in glow phase, the electricity of node B
Position is increased due to the conducting access of second switch transistor 32, i.e. the current potential of node B, C is identical.
By formula (5) and formula (6) it is found that in glow phase, the driving transistor threshold value electricity of 36 both ends of the first capacitor storage
Driving transistor is connected as the program voltage between 30 control pole of driving transistor and the second pole in pressure and data information of voltage,
Form driving current；The threshold voltage information of driving transistor can be partially removed, so as to compensation for drive transistor 30
Threshold voltage inhomogeneities.
Inventor respectively emulates the pixel circuit in Fig. 1, Fig. 3 using 0.25 μm of CMOS technology of CSMC, and
And obtain following result.
Fig. 6 is that the pixel circuit of first embodiment of the invention and the data voltage of conventional pixel circuit and grayscale relationship are bent
Line comparison diagram, wherein gamma correction coefficient is 2.2.
As can be seen that the data voltage range of pixel circuit is in Fig. 6：1.3V-2.5V being conventional pixel circuit data
1.8 times of voltage range (1.3V-1.98V).By adjusting the generated driving current I of driving transistor 30DS, can be with
Further expand data voltage range.For example, driving current I is reducedDS, the minimum of data voltage can be further decreased.
Fig. 7 is the error schematic diagram of luminescent device glow current in the pixel circuit of first embodiment according to the present invention, figure
8 be the error schematic diagram of luminescent device glow current in traditional pixel circuit.
Referring to Fig. 7,8, when the threshold voltage inhomogeneities of driving transistor is ± 5mV, pixel circuit 300
Driving current IDSError range be：- 2.6%-2.6% can be reduced to the error model of conventional pixel circuit driving current
Enclose the 32.5% of (- 8.4%-7.6%).Therefore, the threshold voltage of the invention for capableing of preferably compensation for drive transistor is uneven
Property.
In addition, when second electrode COM is multiplexed the first scanning signal SCAN1, the cathode of luminescent device 35 is in initialization rank
Section T1, V_th generation stage T2 and data voltage write phase T3 are high potential so that luminescent device 35 is in reversed
Bias state can discharge the charge for being accumulated in its anode, delay the aging of luminescent device 35.
It will be appreciated by persons skilled in the art that the first capacitor 36 and the second capacitor 37 can also pass through crystal
Pipe is realized.It is illustrated with reference to second embodiment.
Fig. 9 is the pixel circuit schematic diagram of second embodiment according to the present invention.
Pixel circuit in Fig. 9 is using the transistor 361 and transistor 371 of two backward dioded types of attachment come generation
For the first capacitor 36 and the second capacitor 37.Transistor 361 and 371 is all connected with as backward dioded form, i.e., control pole and
Second it is extremely short connect, divided.In other words, by overlapping between the control pole of transistor 361,371 and respective first pole
Capacitance, transistor 361 and transistor 371 can be with 37 works having the same of the first capacitor 36 in Fig. 3 and the second capacitor
With.
It will be appreciated by persons skilled in the art that according to the variation of circuit structure or element, the various embodiments described above institute
Corresponding sequential can correspondingly change.It is illustrated with reference to 3rd embodiment.
Figure 10 is the image element circuit structure schematic diagram of 3rd embodiment according to the present invention.
In pixel circuit in Fig. 10, driving transistor 30, first switch transistor 31 and third switching transistor 33
It is N-type transistor, second switch transistor 32 is P-type transistor, and the control pole of those transistors, which is used for receiving first, sweeps
Retouch signal SCAN1；4th switching transistor 34 is P-type transistor, and control pole is used for receiving the 5th scanning signal SCAN5, wherein
5th scanning signal SCAN5 differs a clock interval with the first scanning signal SCAN1；Second electrode COM can be multiplexed first
Scanning signal SCAN1.
When second electrode COM is multiplexed the first scanning signal SCAN1, in initialization, V_th generation and data voltage
The cathode of write phase luminescent device 35 is high potential so that luminescent device 35 is in reverse-bias state, to a certain degree
On delay the aging of luminescent device.
In the present embodiment, second switch transistor 32 and the 4th switching transistor 34 select P-type transistor, and second
32 control pole of switching transistor can be used for connecing for receiving the first scanning signal SCAN1,34 control pole of the 4th switching transistor
The next stage scanning signal SCAN5 for receiving the first scanning signal SCAN1, differs the scanning of a clock cycle with SCAN1 in other words
Signal SCAN5.
Obviously, it is adjusted by the type to transistor, enables to the use for reducing scan signal line, Jin Erjian
Change the design for the gate driving circuit that scanning pulse signal is provided by gated sweep signal wire to pixel circuit.
Figure 11 is the pixel circuit schematic diagram of fourth embodiment according to the present invention.
Compared to the pixel circuit in Fig. 3, the first pole of the 4th switching transistor 34 in pixel circuit in fig. 11
It is coupled to ground, the second pole is coupled to the anode of luminescent device 35, and control pole is for receiving third scanning signal SCAN3.
Equally, the pixel circuit in Figure 11 stands good the sequential in Fig. 4, this implementation is described with reference to Fig. 4 and Figure 11
The driving process of example.
T1：Initial phase
Reference potential V is provided on data signal line DATAREF, the first capacitor 36 and 37 both ends of the second capacitor storage
Charge is discharged by the branch that driving transistor 30, third switching transistor 33 and the 4th switching transistor 34 are formed.
T2：The V_th generation stage
Similar with the embodiment in Fig. 3, the threshold voltage information of driving transistor 30 is stored in 36 He of the first capacitor
Second capacitor, 37 both ends, the voltage on two capacitors, can be by expressing equal to the threshold voltage of driving transistor 30 at this time
Formula (1) is expressed as：
Wherein, VTH30For the threshold voltage of driving transistor 30.After the completion of V_th generation, luminescent device 35
Anode potential V35AFor reference voltage VREFAnd the difference of the threshold voltage of driving transistor 30, as shown in expression formula (2)：
T3：Data voltage information write phase
In this stage, data voltage VDATAIt is superimposed upon in drive transistor threshold voltage information, and is stored in the first capacitance
37 both ends of device 36 and the second capacitor can be indicated by formula (3)：
After the completion of data voltage is written, the anode potential of luminescent device 35 is：
T4：Glow phase
In glow phase, second switch transistor 32 is connected, and 36 second end of the first capacitor is coupled to driving transistor the
Two poles, 30 threshold voltage of driving transistor and data information of voltage of 36 both ends of the first capacitor storage are as driving transistor
Voltage between 30 control poles and the second pole so that driving transistor 30 is connected, and forms driving current IDS, drive photophore
Part 35 shines.At this point, the gate source voltage and driving current I of driving transistor 30DSIt is expressed as：
By the coupling of the first capacitor 36 and the second capacitor 37, the second electrode potential of driving transistor 30 fromRaising isRise Δ VS,30It is expressed as：
It should be understood that the coupled relation of second, third switching transistor 32,33 and driving transistor 30 can also be into
Row changes.Figure 12 is the pixel circuit schematic diagram of the 5th embodiment according to the present invention.
It is coupled to the second capacitor 37, the second pole coupling in first pole of the third switching tube 33 in the pixel circuit in Figure 12
The second pole of driving transistor 30 is closed, and is coupled to ground potential via the 4th switching tube 34.Third switching transistor 33
Control pole is for receiving the first scanning signal SCAN1, and the control pole of the 4th switching transistor 34 is for receiving third scanning signal
SCAN3。
Similar with the pixel circuit in Figure 11, the driving process of the pixel circuit in Figure 12 still includes initialization rank
Section, V_th generation stage, data voltage write phase and glow phase, and when being equally applicable work shown in Fig. 4
Sequence, details are not described herein.
In the above-described embodiments, the cathode of luminescent device 35 is to be multiplexed the first scanning information SCAN1, in other realities
It applies in example, the cathode of luminescent device 35 is also coupled to the second common potential VSS.Below by taking the six, the seven embodiments as an example into
Row illustrates.
Embodiment six：
Figure 13 is the pixel circuit schematic diagram of sixth embodiment according to the present invention, and Figure 14 is sixth embodiment of the invention
The signal timing diagram of pixel circuit.
The cathode of luminescent device 35 in pixel circuit in Figure 13 receives the second common potential VSS；4th switch crystal
First pole of pipe 34 is coupled to the second pole of driving transistor 30, and the second pole of the 4th switching transistor 34 is coupled to photophore
The anode of part 35, control pole is for receiving the 4th scanning signal SCAN4.
Similar, pixel circuit driving process is also write including initial phase, V_th generation stage, data voltage
Enter stage and glow phase.The driving process of pixel circuit is described with reference to Figure 13,14.
In the present embodiment, the reference potential V on data signal lineREFMore than or equal to VTH+V35,open+VSS, wherein VTHFor
The threshold voltage of driving transistor 30, V35,openFor the cut-in voltage of luminescent device 35, VSSFor the reference electricity of second electrode VSS
Position.
Reference potential V is provided on initial phase T1, data signal line DATAREF, the first capacitor 36 and the second electricity
The charge of 37 both ends of container storage can pass through driving transistor 30, third switching transistor 33,34 and of the 4th switching transistor
The branch that luminescent device 35 is formed discharges.
It is stored in 36 He of the first capacitor in the threshold voltage information of V_th generation stage T2, driving transistor 30
Second capacitor, 37 both ends.In data voltage write phase T3, data voltage VDATAIt is superimposed upon the threshold value electricity of driving transistor 30
In pressure, and it is stored in 37 both ends of the first capacitor 36 and the second capacitor.
It is low level in glow phase T4, the first scanning signal SCAN1 so that first switch transistor 31 and third are opened
It closes transistor 33 and is in cut-off state；Second scanning signal SCAN2 and the 4th scanning signal SCAN4 is high level so that
Second switch transistor 32 and the 4th switching transistor are in the conduction state.Voltage on first capacitor 36 is used for driving crystalline substance
Body pipe 30 forms driving current IDSSo that driving luminescent device 35 shines.
It is similar with other embodiments, by the coupling of the first capacitor 36 and the second capacitor 37, drive crystal
Second electrode potential of pipe 30 will increase.
Embodiment seven：
Figure 15 is the pixel circuit schematic diagram of the 7th embodiment according to the present invention, and Figure 16 is seventh embodiment of the invention
The sequence diagram of pixel circuit.
Unlike other embodiments, the first common potential VDD in the pixel circuit in Figure 15 is being initialized and is being sent out
Photophase is high potential VH, it is low potential V in V_th generation and data voltage write phaseLTo prevent to drive a current through
Luminescent device.The cathode of luminescent device 35 is for receiving the second common signal VSS。
Reference potential V on initial phase, data signal lineREFMore than or equal to VTH30+V35,open+VSS, wherein VSS
For the reference potential of second electrode VSS.
Initial phase T1, the first electrode VDD of pixel circuit are high potential V in initial phaseH, data signal line
Reference potential V is provided on DATAREF, the first capacitor 36 and 37 both ends of the second capacitor storage charge pass through driving transistor
30 and luminescent device 35 formed branch discharge.
It is stored in 36 He of the first capacitor in the threshold voltage information of V_th generation stage T2, driving transistor 30
Second capacitor, 37 both ends.In data voltage write phase T3, data voltage VDATAIt is superimposed upon the threshold value electricity of driving transistor 30
It presses in information, and is stored in 37 both ends of the first capacitor 36 and the second capacitor.VDD is in V_th generation T2 and data
It is low potential VL when voltage write phase T3, therefore, no electric current flows through luminescent device 35.
It is low level in glow phase T4, the first scanning signal SCAN1 so that first switch transistor 31 and third are opened
It closes transistor 33 and is in cut-off state；Second scanning signal SCAN2 is high level so that second switch transistor 32 is in
Conducting state；First electrode VDD is high potential VH.Voltage on first capacitor 36 is used for driving transistor 30, and forms drive
Streaming current IDS, luminescent device 35 is driven to shine.Equally, it by the coupling of the first capacitor 36 and the second capacitor 37, drives
Second electrode potential of dynamic transistor 30 will increase.
By any of the above-described a embodiment it is found that by capacity coupled effect, the second electrode potential of driving transistor 30 will
It is elevated.Therefore, in glow phase, in order to generate identical driving current, the control electrode potential of driving transistor 35 must
The voltage difference that could be maintained between its control pole and the second pole is increased, to generate corresponding electric current IDS.In addition, with driving crystal
Data voltage range on the connected data signal line of the control pole of pipe 35 expands, and can more precisely control luminescent device
The corresponding Weak current of each grayscale.
The invention also provides a kind of driving methods for pixel arrangement.Figure 17 is the picture of embodiment according to the present invention
The driving flow chart that white, quiet clothes are set.
Step S1701：Initialization boosting storage unit.
In this step, reference potential V is provided on data signal line DATAREF, boost storage unit in the first capacitance
Device 36 and the charge of 37 both ends of the second capacitor storage will be discharged by driving transistor 30.
Step S1702：By the threshold voltage information storage of driving transistor to boosting storage unit.
In this step, boosting storage unit will be by the first capacitor 36 and the second capacitor 37 come storage driving crystalline substance
The threshold voltage information of body pipe 30.
S1703：Data-signal is obtained, and data-signal is stored to boosting storage unit.
In this step, data voltage VDATAIt is superimposed upon on the threshold voltage of driving transistor 30, and is stored in the first electricity
37 both ends of container 36 and the second capacitor.
S1704：Boosting storage unit drives the driving transistor based on threshold voltage information and data information.
In this step, the connection between the second capacitor 37 and driving transistor will be made to disconnect, and utilizes the first electricity
Voltage on container 36 controls driving transistor 30, so that luminescent device shines.
The invention also provides a kind of display equipment including multiple pixel arrangements.Figure 18 is embodiment according to the present invention
Display equipment Organization Chart.
As shown in figure 18, display equipment includes data drive circuit 1801, control circuit 1802 and pel array
1803。
Pel array 1803 includes the multiple pixel arrangements being arranged in rows and columns, and each pixel arrangement is coupled to common electrical
Position VDD.Data drive circuit 1801 provides data voltage information, control circuit via multiple data lines to pel array 1803
1802 provide switching signal via multi-strip scanning line to pel array 1803, so that pel array can be in control circuit
The light of respective strengths is sent out under 1802 control based on data voltage information.
Above-described embodiment is used for illustrative purposes only, and is not limitation of the present invention, in relation to the general of technical field
Logical technical staff can also make a variety of changes and modification without departing from the present invention, therefore, all equivalent
Technical solution should also belong to scope disclosed by the invention.
Claims (11)
1. a kind of pixel arrangement, including：
Luminescent device；
Driving transistor is used to drive the luminescent device, the first pole of the driving transistor to be coupled to the first common electrical
Position, the anode of the luminescent device is coupled in the second pole；
The first transistor, control pole are configured to receive first switch signal, and the control of the driving transistor is coupled in the first pole
Pole processed, and the second pole is configured to receive data voltage information；
Boosting storage unit, is coupling between the control pole of the driving transistor and the second pole, and include the first capacitive
Element and the second capacitive element, wherein first capacitive element and the second capacitive element are configured to store the driving crystal
The threshold voltage information of pipe and the data voltage information, and when the first transistor ends, the first capacitive member
Voltage on part is for driving the driving transistor.
2. pixel arrangement according to claim 1, wherein
First pole of first capacitive element is coupled to the control pole of the driving transistor, and the of first capacitive element
Two poles are coupled to the second pole of the driving transistor, and the control pole configuration of the second transistor via second transistor
To receive second switch signal, under the control of first and second switching signal when the first and second transistors difference
Conducting；
First pole of second capacitive element is coupled to the second pole of first capacitive element, second capacitive element
Second pole is coupled to the second pole of the driving transistor via third transistor, and the control pole of the third transistor is used
In the reception first switch signal.
3. pixel arrangement according to claim 2, wherein when first common potential is low level, described first
Capacitive element and the second capacitive element store the threshold voltage information of the driving transistor and the data voltage information.
4. pixel arrangement according to claim 2, wherein the pixel arrangement further includes the 4th transistor, also, described
Second pole of driving transistor is coupled to the anode of the luminescent device via the 4th transistor, and the 4th transistor is matched
It is set to and is disconnected during the boosting storage unit stores the threshold voltage information.
5. pixel arrangement according to claim 3 or 4, wherein the cathode of the luminescent device is coupled to the second common electrical
Position, second common potential are low level.
6. pixel arrangement according to claim 2, wherein the pixel arrangement further includes the 5th transistor, and described second
It is coupled to ground potential via the 5th transistor in second pole of capacitive element, wherein the 5th transistor is configured in institute
It states before boosting storage unit stores the threshold voltage information and is connected.
7. pixel arrangement according to claim 2, wherein the pixel arrangement further includes the 6th transistor, the driving
It is coupled to ground potential via the 6th transistor in second pole of transistor, wherein the 6th transistor is configured to described
Storage unit of boosting is connected before storing the threshold voltage information.
8. pixel arrangement according to claim 1, wherein first capacitive element and/or second capacitive element
Including at least one transistor.
9. the pixel arrangement according to any one of claim 6 to 8, wherein first common potential is high level,
The cathode of the luminescent device is coupled to the second common potential, and second common potential is the first switch signal.
10. a kind of driving method for pixel arrangement, the pixel arrangement includes driving transistor and boosting storage unit, institute
The method of stating includes：
Initialize the boosting storage unit；
The boosting storage unit stores the threshold voltage information of the driving transistor；
When the boosting storage unit receives data voltage information, the boosting storage unit is by the data voltage information
It is stored in the storage unit；And
The boosting storage unit described in the threshold voltage information and the data voltage information-driven stored based on driving
Dynamic transistor；
Wherein, the boosting storage unit includes the first capacitive element and the second capacitive element, first capacitive element and the
Two capacitive elements are used to store the threshold voltage information and data information of voltage of the driving transistor, first capacitive element
On voltage for driving the driving transistor.
11. a kind of display equipment, including：
Pel array comprising the multiple pixel arrangements as claimed in any one of claims 1-9 wherein for being arranged in rows and/or arranging；
Data drive circuit is configured to provide the data voltage information from multiple data lines to the pel array；
Control circuit is configured to provide the switching signal to the pel array via multi-strip scanning line.
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