CN108802447A - A method of improving high power semi-conductor amplifier Security of test - Google Patents
A method of improving high power semi-conductor amplifier Security of test Download PDFInfo
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- CN108802447A CN108802447A CN201810617164.7A CN201810617164A CN108802447A CN 108802447 A CN108802447 A CN 108802447A CN 201810617164 A CN201810617164 A CN 201810617164A CN 108802447 A CN108802447 A CN 108802447A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/36—Overload-protection arrangements or circuits for electric measuring instruments
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/28—Provision in measuring instruments for reference values, e.g. standard voltage, standard waveform
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/26—Measuring noise figure; Measuring signal-to-noise ratio
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Abstract
A method of high power semi-conductor amplifier Security of test is improved, when carrying out Carrier To Noise Power Density test, is included the following steps：Step 1：Safe input power P is inputted in high power semi-conductor amplifier in mouthIN‑safe；Step 2：Detect high power semi-conductor amplifier output power value POUT, if more than upper limit value, then high power semi-conductor amplifier output port does not connect suitable bandstop filter or without connection bandstop filter.In high power semi-conductor amplifier test process, the test of performance indicator had both been realized, has in turn avoided burning the valuable test equipment such as vector network analyzer, frequency spectrograph.
Description
Technical field
The present invention relates to technical field of electronic device test, and in particular to a kind of raising high power semi-conductor amplifier device
The method of Security of test.
Technical background
High power semi-conductor amplifier is mainly used for the power amplification of frequency microwave signal, and requires good line
Property index and higher output power, application are relatively broad.Evaluate the leading indicator of high power semi-conductor amplifier performance quality
There are output power, parasitic modulation, gain, AM/PM variation coefficients, phase shift, group delay, noise coefficient, standing-wave ratio, harmonic wave, power
Rollback, Carrier To Noise Power Density etc., the test equipment needed have vector network analyzer, power meter, spectrum analyzer, acoustic meter and
Noise source etc..
By taking two enter the high power semi-conductor amplifier test of scene 2 channel as an example, according to required test equipment, performance indicator
It is segmented into following several classes：The first kind is output power, and required test equipment is signal generator and power meter；Second class is to post
Raw modulation and harmonic wave, required test equipment are signal generator and frequency spectrograph；Third class is gain, AM/PM variation coefficients, phase
Shifting, group delay, standing-wave ratio and back-off, required test equipment are vector network analyzers；4th class is noise coefficient, institute
The test equipment needed is noise source and acoustic meter；5th class is Carrier To Noise Power Density, and required test equipment occurs in addition to signal
Outside device and frequency spectrograph, it is also necessary to the microwave modules such as bandstop filter.
When output power is tested, the output signal of signal generator is separately input into through switch SW1-1, SW1-C, SW2-C
The input port of high power semi-conductor amplifier, and the high-power signal exported after amplifying respectively enters after attenuator is decayed
Switch SW3-1, SW3-2, through SW3-C, SW4-C, SW4-4 ingoing power meter, to complete the test of power parameter.
When parasitic modulation, harmonic parameters test, the output signal of signal generator is through switch SW1-1, SW1-C, SW2-C points
It is not input to high power semi-conductor amplifier in mouth, and the high-power signal exported after amplifying divides after attenuator is decayed
Other access switch SW3-1, SW3-2, enters frequency spectrograph through SW3-C, SW4-C, SW4-2, to complete the test of frequency spectrum parameter.
When gain, AM/PM variation coefficients, phase shift, group delay, standing-wave ratio, power back-off parameters test, vector network analysis
The output signal of instrument port 1 is separately input into high power semi-conductor amplifier in mouth through switch SW1-4, SW1-C, SW2-C,
And the high-power signal that exports respectively enters switch SW3-1, SW3-2 after attenuator is decayed after amplifying, through SW3-C, SW4-C,
SW4-1 enters vector network analyzer port 2, to complete the test of scattering parameter.
When noise coefficient is tested, the standard noise of noise source output is separately input into through switch SW1-3, SW1-C, SW2-C
High power semi-conductor amplifier in mouth, and the high-power signal exported after amplifying respectively enters out after attenuator is decayed
SW3-1, SW3-2 are closed, enters Noise Factor Analyzer through SW3-C, SW4-C, SW4-3, to complete the test of noise coefficient.
When Carrier To Noise Power Density is tested, the output signal of signal generator is defeated through switch SW1-1, SW1-C, SW2-C difference
The high-power signal for entering to high power semi-conductor amplifier in mouth, and being exported after amplifying, which needs to hinder by manual connect band, to be filtered
Switch SW3-3, SW3-4 are respectively enterd after wave device, enters frequency spectrograph through SW3-C, SW4-C, SW4-2, to complete noise power
The test of density.
When being tested in addition to Carrier To Noise Power Density, high power semi-conductor amplifier output port is by bandstop filter and with resistance
The connection of port of wave filter 1,2 is outer, when other index tests, the output port of high power semi-conductor amplifier all with attenuator 1,2
Port is attached.In addition, since attenuator has fine broadband character, different frequency range high power semi-conductor can be suitble to amplify
The test of device index, therefore, in engineering practice, attenuator is placed in switching network (comprising switch SW1~4, attenuator 1~2
Deng, built for test path and the conditionings such as signal decaying) it is internal, without manually connecting.And bandstop filter frequency range compared with
Narrow, different high power semi-conductor amplifiers need to be equipped with different bandstop filters, and also have certain volume, and being less likely will
All bandstop filters are put into inside switching network, can only be by the way of connecting manually.
Main problem existing for existing test method is that there are safety risks, because carrying out Carrier To Noise Power Density parameter
When test, test port and connection bandstop filter are replaced simply by pop-up dialog box prompt, if operator is not because carelessness has
Have connection bandstop filter directly tested, then vector network analyzer expensive in test system, spectrum analyzer and
The instruments such as power meter can all be burnt because that can not bear high power semi-conductor amplifier output power, and cost will be very huge
's.
Invention content
In order to solve the above technical problems, the present invention proposes and a kind of improving high power semi-conductor amplifier Security of test
Method, when solving Carrier To Noise Power Density test, very likely because carelessness is without connection bandstop filter or company when test
The problem of having connect inappropriate bandstop filter, and having burnt instrument.
Technical scheme is as follows：
When carrying out Carrier To Noise Power Density test, include the following steps：
Step 1：Safe input power P is inputted in high power semi-conductor amplifier in mouthIN-safe；
Step 2：Detect high power semi-conductor amplifier output power value POUT, if more than upper limit value, then high-power half is led
Body amplifier output port does not connect suitable bandstop filter or without connection bandstop filter.
The safe input power PIN-safeBe setting bandstop filter stopband attenuation values be 0 when, utilize test equipment
Bear power, high power semi-conductor amplifier gain, input test channel insertion loss and output TCH test channel insertion loss meter
It calculates.
The upper limit value bears power for test equipment.
The safe input power PIN-safeIt is generated by signal generator.
The test equipment includes frequency spectrograph.
The input test channel includes signal generator port and switching network.
The output TCH test channel includes switching network and test equipment input port.
Beneficial effects of the present invention are as follows：
1) suitable bandstop filter is not connected when Carrier To Noise Power Density will not be caused to test because of human negligence, it is high-power
Output signal will not be directly inputted into test equipment, to ensure that the safety of test equipment.
2) when bandstop filter connectivity and accordance check, will not cause to test being not connected to bandstop filter
Instrument is burnt.
In high power semi-conductor amplifier test process, the test of performance indicator had both been realized, has in turn avoided burning arrow
Measure the valuable test equipments such as Network Analyzer, frequency spectrograph.
Description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation do not constitute the improper restriction to the application for explaining the application.
Fig. 1 high power semi-conductor amplifiers of the present invention test system schematic
Specific implementation mode
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific implementation mode, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
As background technology is introduced, very likely because neglecting no connect band when being tested with traditional test method
The problem of hindering filter or be connected to inappropriate bandstop filter, and burning instrument.The present invention proposes one kind and carries
The method of high high power semi-conductor amplifier Security of test.
A kind of typical embodiment of the present invention, as shown in Figure 1, the power of input signal, high power semi-conductor amplify
Device gain, TCH test channel insertion loss be all known, then high power semi-conductor amplifier is exported by bandstop filter
The power of signal can calculate.
POUT=PIN+I1+G+I2+K (1)
POUTFor the output power measured in spectrum analyzer port
PINFor signal generator output power
I1For signal generator port to the TCH test channel insertion loss between high power semi-conductor amplifier in mouth
(negative)
G is high power semi-conductor amplifier gain
I2It is (negative to the TCH test channel insertion loss between frequency spectrograph port for high power semi-conductor amplifier output port
Number)
K is bandstop filter stopband attenuation values (negative)
Pass through the calculating of formula (1), it can be determined that it whether is connected to suitable bandstop filter, if not connecting, output
Power will increase (- K) dB；If connection bandstop filter it is improper, stopband attenuation values also can and normal value deviation it is larger, according to
It so can be by detected to the test of output power.But it still needs to solve there are one problem among these, that is, if
Suitable bandstop filter is not connected, output power is caused to be burnt more than the tolerance range of frequency spectrograph.Therefore, this hair
The bright bandstop filter connectivity checks method proposed based on safe input power.For frequency spectrograph, vector network analyzer
For equal test equipments, maximum bears power and generally is 30dBm (1W), for safety, is counted according to 27dBm (0.5W)
It calculates, output power upper limit when as detection, you can calculate safe input power (signal generator port output work
Rate).
PIN-safe=27-G-I1-I2(dBm) (2)
According to the calculating of formula (2), as long as input power is not more than safe input power, even if being not connected to bandreject filtering
Device, the test equipments such as frequency spectrograph will not be burnt.
Therefore, bandstop filter connectivity checks process proposed by the present invention is：
1) test port and connection bandstop filter are replaced in the prompt of pop-up dialog box；
2) bandstop filter port 1,2 is separately connected bandstop filter；
3) two bandstop filter input ports export 1,2 ports with high power semi-conductor amplifier respectively and are attached；
4) setting signal generator output power is safe input power；
5) switch SW1-1, SW1-C, SW2-C, SW2-1 are got through between high power semi-conductor amplifier in mouth 1
Channel；
6) switch SW3-3, SW3-C, SW4-C, SW4-2 are got through to the channel between frequency spectrograph；
7) judge whether high power semi-conductor amplifier output port 1 is connected to conjunction by detecting output signal power value
Suitable bandstop filter stops to test and prompt if abnormal；
8) switch SW1-1, SW1-C, SW2-C, SW2-2 are got through between high power semi-conductor amplifier in mouth 1
Channel；
9) switch SW3-4, SW3-C, SW4-C, SW4-2 are got through to the channel between frequency spectrograph；
10) judge whether high power semi-conductor amplifier output port 2 is connected to by detecting output signal power value
Suitable bandstop filter stops to test and prompt, output signal power value can be measured in frequency spectrograph input port if abnormal.
In short, the present invention bears power calculation high power semi-conductor amplifier according to test equipments such as frequency spectrographs
The safe input power of mouth；Performance number by detecting high power semi-conductor amplifier output signal judges the company of bandstop filter
The general character and accordance.
The stopband of suitable bandstop filter is substantially equal with the tested bandwidth of operation of high power semi-conductor amplifier, and noise
Power density test carries out under point-frequency test pattern, then bandstop filter is equivalent in its stop band frequency range
One fixed attenuator.
The foregoing is merely the preferred embodiments of the application, are not intended to limit this application, for the skill of this field
For art personnel, the application can have various modifications and variations.Within the spirit and principles of this application, any made by repair
Change, equivalent replacement, improvement etc., should be included within the protection domain of the application.
Claims (7)
1. a kind of method improving high power semi-conductor amplifier Security of test, special when carrying out Carrier To Noise Power Density test
Sign is, includes the following steps：
Step 1：Safe input power P is inputted in high power semi-conductor amplifier in mouthIN-safe；
Step 2：Detect high power semi-conductor amplifier output power value POUT, if more than the upper limit value of setting, then high-power half
Conductor amplifier output port does not connect suitable bandstop filter or without connection bandstop filter.
2. a kind of method improving high power semi-conductor amplifier Security of test as described in claim 1, which is characterized in that
The safe input power PIN-safeIt is that power, big is born according to test equipment when bandstop filter stopband attenuation values are 0
What power semiconductor amplifier gain, input test channel insertion loss and output TCH test channel insertion loss determined.
3. a kind of method improving high power semi-conductor amplifier Security of test as described in claim 1, which is characterized in that
The upper limit value bears power for test equipment.
4. a kind of method improving high power semi-conductor amplifier Security of test as described in claim 1, which is characterized in that
The safe input power PIN-safeIt is generated by signal generator.
5. a kind of method improving high power semi-conductor amplifier Security of test as claimed in claim 2, which is characterized in that
The test equipment includes frequency spectrograph.
6. a kind of method improving high power semi-conductor amplifier Security of test as claimed in claim 2, which is characterized in that
The input test channel includes signal generator port and switching network.
7. a kind of method improving high power semi-conductor amplifier Security of test as claimed in claim 2, which is characterized in that
The output TCH test channel includes switching network and test equipment input port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810617164.7A CN108802447B (en) | 2018-06-15 | 2018-06-15 | Method for improving test safety of high-power semiconductor amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810617164.7A CN108802447B (en) | 2018-06-15 | 2018-06-15 | Method for improving test safety of high-power semiconductor amplifier |
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| Publication Number | Publication Date |
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| CN108802447A true CN108802447A (en) | 2018-11-13 |
| CN108802447B CN108802447B (en) | 2021-04-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112666453A (en) * | 2020-10-23 | 2021-04-16 | 陆放 | Method for testing digital function and output-input level and speed of integrated circuit |
| CN117452176A (en) * | 2023-12-25 | 2024-01-26 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Device power resistance test system, method and fixture |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112666453A (en) * | 2020-10-23 | 2021-04-16 | 陆放 | Method for testing digital function and output-input level and speed of integrated circuit |
| CN112666453B (en) * | 2020-10-23 | 2023-02-28 | 陆放 | Method for testing digital function and output-input level and speed of integrated circuit |
| CN117452176A (en) * | 2023-12-25 | 2024-01-26 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Device power resistance test system, method and fixture |
| CN117452176B (en) * | 2023-12-25 | 2024-04-02 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Device power resistance test system, method and fixture |
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