CN108796565A - A kind of method of electro-deposition ARTSemiconductor silicon carbide composite deposite - Google Patents
A kind of method of electro-deposition ARTSemiconductor silicon carbide composite deposite Download PDFInfo
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- CN108796565A CN108796565A CN201810752894.8A CN201810752894A CN108796565A CN 108796565 A CN108796565 A CN 108796565A CN 201810752894 A CN201810752894 A CN 201810752894A CN 108796565 A CN108796565 A CN 108796565A
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- silicon carbide
- composite deposite
- plating solution
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/565—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of zinc
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
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- Chemical Kinetics & Catalysis (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a kind of methods of electro-deposition ARTSemiconductor silicon carbide composite deposite, including：(1) absolute ethyl alcohol is added into silicon carbide, 12~36h of ball milling obtains the silicon carbide powder that grain size is 10~100nm in 80~100 DEG C of dry 3~5h；(2) above-mentioned silicon carbide powder is added in plating solution, 1~2h of ultrasonic disperse makes silicon carbide powder be evenly dispersed in plating solution, wherein the plating solution is mainly made of the zinc sulfate of 150~170g/L and the sulfuric acid of 50~80g/L；(3) pretreated plated object is placed in the plating solution of above-mentioned silicon carbide-containing powder and is electroplated, cleaned 2~5 times with absolute ethyl alcohol and deionized water respectively after plating, it is dry, obtain ARTSemiconductor silicon carbide composite deposite.In the present invention, not only there is fine and close surface texture by the ARTSemiconductor silicon carbide composite deposite that electro-deposition method obtains, moreover, making the composite deposite that there is good wear-resisting property by the way that silicon carbide powder is added.
Description
Technical field
The present invention relates to field of material technology, more particularly to a kind of side of electro-deposition ARTSemiconductor silicon carbide composite deposite
Method.
Background technology
Electrochemical plating is to form metal that is uniform, fine and close, being well combined or conjunction in article surface using metal electrodeposition
Golden sedimentary.It is 1803 French that electrochemical plating, which has had more than 200 years developing history, earliest plating,
L.Brugnattlli is gold-plated in the success of silver strip surface.Then, electrochemical plating gold, silver, copper, nickel, chromium, zinc technology develop gradually,
So that electroplating industry 19th century mid-term form more rounded system.In numerous steel coating, zinc coating due to its from
Corrosion potential is relatively negative, has the protective action of sacrificial anode to steel, in addition, zinc coating crystal structure is fine and close, barrier action is good,
To be widely used in steel protection.
In water body environment, the service life of steel by physical factor, chemical factor and biological factor collective effect,
Traditional steel zinc coating corrodes acceleration problem, but its caused by good capable of resisting chemical factor and part physical factor
Wear-resisting property is ideal not enough.
For this reason, it is necessary in view of the above-mentioned problems, propose a kind of method of electro-deposition ARTSemiconductor silicon carbide composite deposite, energy
Enough solve problems of the prior art.
Invention content
The purpose of the present invention is to provide a kind of methods of electro-deposition ARTSemiconductor silicon carbide composite deposite, to overcome existing skill
Deficiency in art.
To achieve the above object, the present invention provides the following technical solutions：
A kind of method of electro-deposition ARTSemiconductor silicon carbide composite deposite, including：
(1) absolute ethyl alcohol is added into silicon carbide, 12~36h of ball milling, in 80~100 DEG C of dry 3~5h, obtaining grain size is
The silicon carbide powder of 10~100nm；
(2) above-mentioned silicon carbide powder is added in plating solution, 1~2h of ultrasonic disperse makes silicon carbide powder be evenly dispersed in
In plating solution, wherein the plating solution is mainly made of the zinc sulfate of 150~170g/L and the sulfuric acid of 50~80g/L；
(3) pretreated plated object is placed in the plating solution of above-mentioned silicon carbide-containing powder and is electroplated, divided after plating
It is not cleaned 2~5 times with absolute ethyl alcohol and deionized water, it is dry, obtain ARTSemiconductor silicon carbide composite deposite.
Preferably, in step (2), 2~10g silicon carbide powders are contained in plating solution described in 1L.
Preferably, 5~8g silicon carbide powders are contained in plating solution described in 1L.
Preferably, in step (3), the condition of plating is：1~3A/dm of current density2, 25~35 DEG C of electroplating temperature, plating
30~40min of time.
Preferably, further include stabilizer in the plating solution.
Preferably, further include antioxidant in the plating solution.
Preferably, the thickness of the ARTSemiconductor silicon carbide composite deposite is 0.1~0.8mm.
Preferably, the thickness of the ARTSemiconductor silicon carbide composite deposite is 0.3~0.6mm.
Compared with the prior art, the advantages of the present invention are as follows：In the present invention, the semiconductor carbon that is obtained by electro-deposition method
SiClx composite deposite not only has fine and close surface texture, moreover, making the composite deposite have by the way that silicon carbide powder is added
Good wear-resisting property.
Specific implementation mode
The present invention is described further by the following example：According to following embodiments, the present invention may be better understood.
However, as it will be easily appreciated by one skilled in the art that specific material ratio, process conditions and its result described in embodiment are only used
In illustrating the present invention, without the present invention described in detail in claims should will not be limited.
The present invention discloses a kind of method of electro-deposition ARTSemiconductor silicon carbide composite deposite, including：
(1) absolute ethyl alcohol is added into silicon carbide, 12~36h of ball milling, in 80~100 DEG C of dry 3~5h, obtaining grain size is
The silicon carbide powder of 10~100nm；
(2) above-mentioned silicon carbide powder is added in plating solution, 1~2h of ultrasonic disperse makes silicon carbide powder be evenly dispersed in
In plating solution, wherein the plating solution is mainly made of the zinc sulfate of 150~170g/L and the sulfuric acid of 50~80g/L；
(3) pretreated plated object is placed in the plating solution of above-mentioned silicon carbide-containing powder and is electroplated, divided after plating
It is not cleaned 2~5 times with absolute ethyl alcohol and deionized water, it is dry, obtain ARTSemiconductor silicon carbide composite deposite.
Wherein, in step (2), 2~10g silicon carbide powders are contained in plating solution described in 1L, it is preferred that contain in plating solution described in 1L
There are 5~8g silicon carbide powders.
Wherein, in step (3), the condition of plating is：1~3A/dm of current density2, 25~35 DEG C of electroplating temperature, when plating
Between 30~40min, it is preferred that current density 2A/dm2, 30 DEG C of electroplating temperature, electroplating time 35min.
Wherein, further include stabilizer and antioxidant in the plating solution.
In the present invention, the thickness of the ARTSemiconductor silicon carbide composite deposite is 0.1~0.8mm, it is preferred that the semiconductor
The thickness of SiC composite coat is 0.3~0.6mm.
Following methods that electro-deposition ARTSemiconductor silicon carbide composite deposite in the present invention is illustrated with specifically embodiment.
Embodiment 1
(1) absolute ethyl alcohol is added into silicon carbide, ball milling 12h, in 80 DEG C of dry 3h, it is 10~100nm's to obtain grain size
Silicon carbide powder；
(2) above-mentioned silicon carbide powder is added in plating solution, ultrasonic disperse 1h makes silicon carbide powder be evenly dispersed in plating solution
In, wherein the plating solution is mainly made of the sulfuric acid of the zinc sulfate of 150g/L and 50g/L, and, 2g carbon is contained in plating solution described in 1L
SiClx powder；
(3) pretreated plated object is placed in the plating solution of above-mentioned silicon carbide-containing powder and is electroplated, wherein plating
Condition be：Current density 1A/dm2, 25 DEG C, electroplating time 30min of electroplating temperature, after plating respectively with absolute ethyl alcohol and go from
Sub- water cleans 2~5 times, dry, obtains ARTSemiconductor silicon carbide composite deposite.
Embodiment 2
(1) absolute ethyl alcohol is added into silicon carbide, for 24 hours, in 90 DEG C of dry 4h, it is 10~100nm's to obtain grain size to ball milling
Silicon carbide powder；
(2) above-mentioned silicon carbide powder is added in plating solution, ultrasonic disperse 1.5h makes silicon carbide powder be evenly dispersed in plating
In liquid, wherein the plating solution is mainly made of the sulfuric acid of the zinc sulfate of 160g/L and 60g/L, and, 6g is contained in plating solution described in 1L
Silicon carbide powder；
(3) pretreated plated object is placed in the plating solution of above-mentioned silicon carbide-containing powder and is electroplated, wherein plating
Condition be：Current density 2A/dm2, 30 DEG C, electroplating time 35min of electroplating temperature, after plating respectively with absolute ethyl alcohol and go from
Sub- water cleans 2~5 times, dry, obtains ARTSemiconductor silicon carbide composite deposite.
Embodiment 3
(1) absolute ethyl alcohol is added into silicon carbide, ball milling 36h, in 100 DEG C of dry 5h, it is 10~100nm's to obtain grain size
Silicon carbide powder；
(2) above-mentioned silicon carbide powder is added in plating solution, ultrasonic disperse 2h makes silicon carbide powder be evenly dispersed in plating solution
In, wherein the plating solution is mainly made of the sulfuric acid of the zinc sulfate of 170g/L and 80g/L, and, 10g is contained in plating solution described in 1L
Silicon carbide powder；
(3) pretreated plated object is placed in the plating solution of above-mentioned silicon carbide-containing powder and is electroplated, wherein plating
Condition be：Current density 3A/dm2, 35 DEG C, electroplating time 40min of electroplating temperature, after plating respectively with absolute ethyl alcohol and go from
Sub- water cleans 2~5 times, dry, obtains ARTSemiconductor silicon carbide composite deposite.
The thickness for the ARTSemiconductor silicon carbide composite deposite being prepared according to the method in the various embodiments described above is 0.1~
0.8mm, it is preferred that the thickness of the ARTSemiconductor silicon carbide composite deposite is 0.3~0.6mm.
It is swept to carrying out Electronic Speculum using the method deposition ARTSemiconductor silicon carbide composite deposite obtained in above-described embodiment 1~3
Discovery is retouched, silicon carbide and zinc can be evenly dispersed in the surface of plated object, have fine and close surface texture, grain size
For 50~100nm；The ARTSemiconductor silicon carbide composite deposite in above-described embodiment 1~3 is carried out using friction wear testing machine resistance to
Grind performance test, test condition：Load 200g, GCr15 abrading-ball size Φ 5mm, time 20min, rotating speed 300r/min.As a result table
Bright, the friction coefficient of the ARTSemiconductor silicon carbide composite deposite in the present invention is 0.8~0.95, therefore has preferable wearability
Energy.
Finally, it is to be noted that, the terms "include", "comprise" or its any other variant be intended to it is non-exclusive
Property include so that including a series of elements process, method, article or equipment not only include those elements, but also
Further include other elements that are not explicitly listed, or further include for this process, method, article or equipment it is intrinsic
Element.
Claims (8)
1. a kind of method of electro-deposition ARTSemiconductor silicon carbide composite deposite, which is characterized in that including：
(1) be added absolute ethyl alcohol into silicon carbide, 12~36h of ball milling, in 80~100 DEG C of dry 3~5h, obtain grain size be 10~
The silicon carbide powder of 100nm；
(2) above-mentioned silicon carbide powder is added in plating solution, 1~2h of ultrasonic disperse makes silicon carbide powder be evenly dispersed in plating solution
In, wherein the plating solution is mainly made of the zinc sulfate of 150~170g/L and the sulfuric acid of 50~80g/L；
(3) pretreated plated object is placed in the plating solution of above-mentioned silicon carbide-containing powder and is electroplated, used respectively after plating
Absolute ethyl alcohol and deionized water are cleaned 2~5 times, dry, obtain ARTSemiconductor silicon carbide composite deposite.
2. the method for electro-deposition ARTSemiconductor silicon carbide composite deposite according to claim 1, which is characterized in that step (2)
In, 2~10g silicon carbide powders are contained in plating solution described in 1L.
3. the method for electro-deposition ARTSemiconductor silicon carbide composite deposite according to claim 2, which is characterized in that plated described in 1L
Contain 5~8g silicon carbide powders in liquid.
4. the method for electro-deposition ARTSemiconductor silicon carbide composite deposite according to claim 1, which is characterized in that step (3)
In, the condition of plating is：1~3A/dm of current density2, 25~35 DEG C of electroplating temperature, 30~40min of electroplating time.
5. the method for electro-deposition ARTSemiconductor silicon carbide composite deposite according to claim 1, which is characterized in that the plating solution
In further include stabilizer.
6. the method for electro-deposition ARTSemiconductor silicon carbide composite deposite according to claim 1, which is characterized in that the plating solution
In further include antioxidant.
7. the method for electro-deposition ARTSemiconductor silicon carbide composite deposite according to claim 1, which is characterized in that described partly to lead
The thickness of body SiC composite coat is 0.1~0.8mm.
8. the method for electro-deposition ARTSemiconductor silicon carbide composite deposite according to claim 7, which is characterized in that described partly to lead
The thickness of body SiC composite coat is 0.3~0.6mm.
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| CN201810752894.8A CN108796565A (en) | 2018-07-10 | 2018-07-10 | A kind of method of electro-deposition ARTSemiconductor silicon carbide composite deposite |
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| CN201810752894.8A CN108796565A (en) | 2018-07-10 | 2018-07-10 | A kind of method of electro-deposition ARTSemiconductor silicon carbide composite deposite |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3945893A (en) * | 1972-12-30 | 1976-03-23 | Suzuki Motor Company Limited | Process for forming low-abrasion surface layers on metal objects |
| CN103911649A (en) * | 2014-04-23 | 2014-07-09 | 桂林理工大学 | Preparation method of zinc-based composite coating |
| CN107641685A (en) * | 2017-10-14 | 2018-01-30 | 闫英 | A kind of heat treatment method of high-strength steel sheet |
| CN107653361A (en) * | 2017-10-14 | 2018-02-02 | 闫英 | A kind of preparation technology of deep processing autobody sheet |
-
2018
- 2018-07-10 CN CN201810752894.8A patent/CN108796565A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3945893A (en) * | 1972-12-30 | 1976-03-23 | Suzuki Motor Company Limited | Process for forming low-abrasion surface layers on metal objects |
| CN103911649A (en) * | 2014-04-23 | 2014-07-09 | 桂林理工大学 | Preparation method of zinc-based composite coating |
| CN107641685A (en) * | 2017-10-14 | 2018-01-30 | 闫英 | A kind of heat treatment method of high-strength steel sheet |
| CN107653361A (en) * | 2017-10-14 | 2018-02-02 | 闫英 | A kind of preparation technology of deep processing autobody sheet |
Non-Patent Citations (1)
| Title |
|---|
| 张允诚 等: "《电镀手册》", 31 December 2011 * |
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Application publication date: 20181113 |