CN1087718A - Optical fibre thermosensitive device and manufacture method thereof - Google Patents
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- CN1087718A CN1087718A CN92113322.7A CN92113322A CN1087718A CN 1087718 A CN1087718 A CN 1087718A CN 92113322 A CN92113322 A CN 92113322A CN 1087718 A CN1087718 A CN 1087718A
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- 239000013307 optical fiber Substances 0.000 title claims abstract description 93
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
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- 239000007788 liquid Substances 0.000 claims description 4
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- 238000011049 filling Methods 0.000 claims description 3
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- 238000012545 processing Methods 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
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Abstract
The present invention relates to a kind of optical fibre thermosensitive device and manufacture method.Comprise thermal expansion element, the reflective mirror on it has several optical fiber guide channels to location wall skeleton and vertically is connected to the reflective mirror place and inserts single-mode fiber in the passage.Its main manufacturing step is to corrode on silicon substrate with anisotropic etchant to make thermal expansion element, passage and wall bone.Reflective mirror is to be deposited on the oxide layer with chemical gas-phase method, and the reflector layer by silicon nitride, titanium, the combination of gold layer hides thin plate with anode bonding process bonding, and optical fiber inserts in the passage and is fixed on the chip and the closed channel mouth with multipolymer by thermal treatment.Has the low advantage that can make in batches of cost.
Description
The present invention relates to a kind of semiconductor devices, relate to a kind of optical fibre thermosensitive device and manufacture method thereof or rather.
Because aspects such as technology controlling and process, quality control, robotization and safety guarantee are to the new demand of thermal measurement mode and the proposition of thermal sensor performance; Not only since optical fiber itself be electrical insulator but also be the undesirable heat conductor, and not influenced by electrical interference, thereby security is good, isolation is good, and the thermal loss of Measuring Object can be reduced to minimum, and the optical fibre thermosensitive device of therefore using optical fiber technology has become the development characteristic of current thermal sensor.The optical fibre thermosensitive device that the physical influence of the light of existing many optical fibre thermosensitive device patents and utilization and temperature correlation is made comes out.
The variation of light transmission is shown by the thermoelectric material fork-like farm tool used in ancient China, be presented to No. 5052820 patent of the U.S. of Vincent moral McInnis (Vincent DMcGinniss) etc. on October 1st, 1991, a kind of device that uses improved organic polymer to make is disclosed, in certain temperature range, significant change can take place in its light transmission.Return the amplitude and the time delay that comprise Stokes and anti-Stokes light in the light beam of fork-like farm tool used in ancient China from optical fiber and dependence is arranged with temperature.These principles of application such as Yuzuru Tanabe have been made a kind of distributed optical fiber temperature sensor (United States Patent (USP) U.S.5054935, on October 8th, 1991 is open)
The fluorescence intensity of many materials is temperature variant, based on this principle, a kind of thermally sensitive new fiber optic system (U.S. Pat is open on February 25th, 5090818,1992) has been made in equine Si Kelei Leman (Marcos YKleinerman) etc.
At present, optical fibre thermosensitive device development and use in common problem be that the instability and the cost of the inexactness of fiber transmission attenuation and long-term work is too high.
The report of existing fiber optic high-resolution interferometer type thermosensitive device, lightwave technology journal (Journal of Lightwave Technology) the 9th volume the 1st phase 129-133 page or leaf as publishing in January, 1991 by the newest research results that becomes to provide according to Lee and Henry Fu Taile (Chung E Lee and Henry FTaylor) is: " using fiber optics Fabry-Pyrrho (Fabry-Perot) temperature sensor of low-coherence light source ".The resolution of these sensors is high especially to be owing to light path, in other words owing to the highly sensitive cause of optical phase to temperature.Another advantage of these sensors is not need accurately to measure the transmission light intensity.
Regrettably, the thermosensitive device of these fiber optic interferometric ceremonies has following defective:
(a) optical path difference can not remain enough little (i.e. tens microns);
(b) variation of reference interferometer environment temperature can influence sensing point;
(c) be difficult to produce this sensor in batches with low cost.
The object of the present invention is to provide a kind of optical fibre thermosensitive device and manufacture method thereof, have reliable, accurate, replaceable, safe, solid and characteristics that cost is low.
Optical fibre thermosensitive device of the present invention, comprise the thermal expansion element that is produced on the silicon substrate, be produced on the reflective mirror on the thermal expansion element, an optical fiber guide channel that is produced on the silicon substrate vertically is connected to the reflective mirror place, that makes in pairs in the optical fiber guide channel stops wall bone (studs) and location wall skeleton, insert in the optical fiber guide channel to stop the light transmitting fiber that wall bone and location wall skeleton stop, locate, light transmitting fiber and reflective mirror maintenance certain distance.
The manufacture method of optical fibre thermosensitive device of the present invention is preparation (110) silicon substrate; With right<100〉and<110〉direction corrosion speeds are greatly faster than<111〉anisotropic etchant of direction corrosion speed corrodes to make on described silicon substrate and stops wall bone, location wall skeleton in thermal expansion element, optical fiber guide channel and the passage; The compound reflecting layer of on the sidewall oxide of thermal expansion element, forming by silicon nitride layer, titanium layer and gold layer with the CVD (Chemical Vapor Deposition) method deposit; Silicon chip is divided into chip; Bonding (bonding) hides dull and stereotyped under ambiance on the thermal expansion element of described chip and most of optical fiber guide channel; Light transmitting fiber inserted the optical fiber guide channel from the outside and, by Technology for Heating Processing light transmitting fiber is fixed on the substrate of optical fiber guide channel outer end with multipolymer to stop wall bone and location wall skeleton location, and the seal channel mouth.
Optical fibre thermosensitive device of the present invention has two kinds of basic structures, first kind of basic structure is: thermal expansion element is the annular seal space that fills the big flowable mass of thermal expansivity such as gas or liquid in, reflective mirror is a sidewall of this cavity, can depart from, and be coated with reflector layer.Optical fiber guide channel aligning reflective mirror departs from the zone for maximum, the a pair of top that stops the wall position of bone in the optical fiber guide channel, other then is provided with along the optical fiber guide channel location wall skeleton, between the top of reflective mirror and optical fiber guide channel an interconnection is arranged, the optical fiber guide channel is communicated with atmospheric environment by interconnection.Insert single-mode fiber in the optical fiber guide channel and be subjected to the passage top to stop the wall bone to stop, remain on a distance with reflective mirror, and the wall bone that is positioned remains on the center position of optical fiber guide channel.But this structure utilizes the expansion of thermal expansion element to cause the displacement of cavity offset from side wall, utilizes the interferometer optics systematic survey phase shift that is connected with single-mode fiber again.First kind of basic structure can have some modified structures, and comprising silicon substrate back side deposit infrared absorption (black matrix) layer at thermal expansion element and optical fiber guide channel, the heat that makes the expansion of cavity inner fluid is from infrared absorption layer.Another kind of modified structure is the cavity blow-by but communicates with ambient atmosphere by interconnection that the cavity madial wall applies layer of resist, the interconnection exit sealing between reflective mirror and optical fiber guide channel top.
Second kind of basic structure is: thermal expansion element is exactly an optical fiber guide channel itself, and reflective mirror is the madial wall of optical fiber guide channel, is coated with reflector layer on the madial wall but can not departs from.The optical fiber guide channel stop wall bone and location wall skeleton all with first kind of basic structure, optical fiber in the passage can be freely flexible along passage, also be connected, measure because the phase shift that the caused light transmitting fiber length variations of substrate thermal expansion causes with the interferometer optics system.
The interferometer optics system mainly comprises a semiconductor laser module, at least three single-mode optical fiber connectors, a four-way single-mode optical-fibre coupler and a photodiode module.During optical fibre thermosensitive device work, the light that carries the laser module of single-mode fiber flexible cord passes through first connector and coupling mechanism.Laser instrument is driven by the square pulse of low duty cycle, transmission light in one of coupling mechanism output fiber incides on the device by second connector, this light produces first reflected light by the single-mode fiber end face reflection of device again, then produce second reflected light by the device reflective mirror, by behind second connector, coupling mechanism and the 3rd connector, detect this two reflected light by the photodiode module.The intensity distributions of the optical system of this interferometer type is drawn by two reflected light stacks, represents with following formula:
I=I
o+I
r+2(I
oI
r)
1/2COS(θ+φ)
I wherein
oAnd I
rRepresent respectively from the intensity of reflected light of reflective mirror fork-like farm tool used in ancient China with from the intensity of reflected light of device fiber end face fork-like farm tool used in ancient China; θ is two fixed skew between the reflected light; φ is the additional phase error that is produced by the expansion of device thermal expansion element.
For first kind of basic structure form, but the expansion of thermal expansion element causes the displacement of device cavity offset from side wall, and this moment, additional phase error can be write as following form:
φ=2πW/λ
Wherein λ is a light intensity, but W is the bias of device cavity offset from side wall.
For second kind of basic structure form, thermal expansion causes that the additional phase error that the light transmitting fiber length variations causes can be write as following form:
φ=2πkL/λ
Wherein k is the thermal expansivity of silicon, and L is the length of fiber optics in the optical fiber guide channel.
Describe structure of the present invention and method for making in detail below in conjunction with the embodiment accompanying drawing.
Accompanying drawing 1A-1B is optical fibre thermosensitive device first most preferred embodiment plan view from above and the sectional view of the present invention
Accompanying drawing 2A-2G is all sectional views of the optical fibre thermosensitive device first most preferred embodiment production process of the present invention
Accompanying drawing 3 stops wall bone sectional view for optical fiber guide channel the inner
Accompanying drawing 4 is a location wall skeleton sectional view in the optical fiber guide channel
Accompanying drawing 5A-5B is optical fibre thermosensitive device second most preferred embodiment vertical view and the sectional view of the present invention
Accompanying drawing 6A-6B is optical fibre thermosensitive device the 3rd most preferred embodiment vertical view and a sectional view of the present invention
Accompanying drawing 7A-7B is optical fibre thermosensitive device the 4th most preferred embodiment vertical view and a sectional view of the present invention
Referring to accompanying drawing 1A, 1B, but optical fibre thermosensitive device comprises cavity 14 offset from side wall 12, cavity 16, and interconnection 18, vertical passage 22 a pair ofly stops wall bone 26 and the two pairs of location wall skeletons 28 and 30,10 are silicon substrate or claim chip.Layer of resist 42 is arranged on the sidewall of cavity 14, but reflector layer 40 is arranged, hide the surface that flat board 32 is bonded in chip 10, be used to hide the major part of cavity 14, whole interconnection 18 and vertical passage 22 towards the offset from side wall surface of passage 22.But a single-mode fiber 24 inserts vertical passages 22 and stopped wall bone 26 to stop and keep certain distances with offset from side wall 12.Optical fiber 24 is positioned at the center of passage 22, but passage 22 is perpendicular to offset from side wall 12 and to maximum deviation zone that will definitely offset from side wall 12.There is higher temperatures binding material 34 in passage 22 exits, be used for 22 mouthfuls of seal channels and optical fiber 24 is fixed on chip 10.
Referring to accompanying drawing 2A-2G, silicon substrate 10, be oriented in<110〉direction on ± 1 ° within, its reference edge cut into two groups of { 111 } faces in one group parallel and with (110) Surface Vertical.
Step shown in Fig. 2 B, on oxide layer 11, etch 5 rectangular apertures with standard photolithography techniques, but the distance between opening defines the thickness of offset from side wall 12 and the thickness of film 15,17,19, and film 15,17,19 is used to form and stops wall bone 26 and location wall skeleton 28,30.But the thickness of offset from side wall 12 is by the design decision of device, and the thickness of film 15,17,19 is 3-4 μ m.
Shown in Fig. 2 C in the step, employing be anisotropic etch, promptly form with the anisotropic etchant corrosion, this mordant is right<100 and<110〉direction quite high corrosion speed is arranged, compare fast about 50 times of<111〉direction corrosion speed.For stable control size dimension, make the long limit of each opening be parallel to the silicon chip reference edge, promptly aim at<111〉direction, accuracy is within ± 1 °.Can finish by one of following two methods.Method is to make conventional visable indicia on photomask, and its design is consistent with reference edge. second method be near and be parallel to the rectangular opening that erodes away the dark about 10 μ m of a row on the substrate of reference edge.Anisotropic etch is to carry out under 53 ℃ in the solution that contains 40 gram KOH and 100ml water.With this understanding, rate of corrosion is 21 μ m/ hours.In the 2C step, but form cavity 14 and offset from side wall thereof 12, three vertical films 15,17,19 and passages 22 in the silicon chip 10.Owing to be sideetching, but the thickness of offset from side wall is approximately than the little 2 μ m of corresponding spacing of this figure.The about 1-2 μ of the thickness m of film 15,17,19.But offset from side wall 12 is inverted isosceles trapezoids, and its thickness and size are determined by designs.The shape of film 15,17,19 is inverted isosceles triangles.The length b on film 15 tops should follow following relation (referring to Fig. 3):
Dh/tan(α/2)<b
Stop<Dh/tan(α/2)
α represents the angle between top and waist limit in the formula, and h is the height of film 15, and d is the core diameter of optical fiber 24, and D is the diameter of optical fiber 24, and promptly fiber cores coats diameter.
The length b(on film 17,19 tops is referring to Fig. 4) estimate by following formula:
b
The location=Dh/tan(α/2)
The figure that the length on this film top is subjected to be formed by corrosion in the step shown in Fig. 2 B is limited.
In the step, silicon chip 10 thermal oxides for the second time are to change the major part of film 15,17,19 into oxide 11 shown in Fig. 2 D.
Shown in Fig. 2 E in the step, in HF solution, erode oxidation film 15,17,19 after, form and stop wall bone 26 and location wall skeleton 28,30.Silicon chip 10 thermal oxide for the third time, but the oxide layer that forms thick 1000A on the sidewall and offset from side wall 12 surfaces of cavity 14, generally use thick titanium layer and gold layer that 1500A is thick of silicon nitride layer, 400A of a thick 1200A of CVD (Chemical Vapor Deposition) method deposit again on this oxide layer surface, this composite bed is as layer of resist 42 and reflector layer 40.
In the step, after silicon chip 10 was divided into chip, the method that bonds with anode was bonded to chip surface with Pyrex glass 32, covered the big portion of cavity 14 and passage 22 shown in Fig. 2 F.
In the final step shown in Fig. 2 G, single-mode fiber 24 is inserted in the passage 22, is stopped that wall bone 26 blocks and, a fritter multipolymer 34 is applied to the exit region of passage 22, and under about 482 ℃, carries out thermal treatment in 30 minutes by wall bone 28,30 location.Because the fusing of multipolymer and flowing, seal chamber 16 and passage 22 also are fixed on optical fiber 24 on the chip 10.
Because silicon has sufficiently high reflectivity in visible-range, the device of in visible-range, using, reflector layer 40 can omit.
Referring to Fig. 3, shown in Fig. 2 E-2G in the step, remove film 15 backs form block light transmitting fiber 24 stop wall bone 26.
Referring to Fig. 4, in the step, remove film 17,19 backs and form the location wall skeleton 28,30 that light transmitting fiber 24 is clamped in passage 22 centers shown in Fig. 2 E-2G.
Referring to Fig. 5 A, 5B, but optical fibre thermosensitive device comprises the cavity 14 that all is produced on silicon substrate or the chip 10, cavity 16 offset from side wall 12, interconnection 20, vertical passage 22, a pair of wall bone 26, two pairs of location wall skeletons 28 and 30 of stopping.But offset from side wall 12 is formed with reflector layer 40 towards the surface of vertical passage 22.Chip 10 surfaces are bonded with thin plate 32, are used for seal chamber 14, hide whole interconnections 20 and most vertical passage 22.One single-mode fiber 24 inserts vertical passages 22 and blocks to stop wall bone 26, vertical passage 22 places that a droplet bonding agent 34 is applied to optical fiber 24 and is not covered by thin plate 32, and the seal channel mouth also is fixed on optical fiber 24 on the chip 10.
The making step of said structure is basic identical with step shown in Fig. 2 A-2G, only is modified as follows:
A) form interconnection 20 rather than interconnection 18;
B) omit layer of resist 42;
C) form seal chamber 14 rather than cavity 16 and vertical passage 22;
D) described sealing technology is Pyrex glass anode to be bonded to chip 10 surfaces under 300-400 ℃ or to be coated with 7570 to one
#The silicon chip of glass film at room temperature is bonded to chip 10 surfaces or low-melting alloy is bonded to chip 10 surfaces;
E) for gas filling, the sealing of first cavity that expands, under 300-400 ℃ or room temperature, carry out, for liquid-filled, sealing, at room temperature carry out.
Referring to Fig. 6 A, 6B, optical fibre thermosensitive device comprises cavity 16, interconnection 20, vertical passage 22, a pair of wall bone 26 and the two pairs of location wall skeletons 28,30 of stopping that all being produced on silicon substrate or the chip 10.Cavity 16 is formed with reflector layer 40 on the sidewall of vertical passage 22.A thin plate 32 is bonded to the surface of chip 10, is used to cover the big portion of cavity 16, whole interconnection 20 and vertical passage 22.One single-mode fiber 24 is inserted into the exit of vertical passage 22, and the seal channel mouth also is fixed on optical fiber 24 on the chip 10.
Also substantially with shown in Fig. 2 A-2G, difference only is the making step of said structure:
A) omit cavity 14 and interconnection 18;
B) increase the length of vertical passage 22 as far as possible;
Referring to Fig. 7 A, 7B, but optical fibre thermosensitive device comprises the cavity 14 that all is produced on silicon substrate or the chip 10 and offset from side wall 12 thereof, cavity 16, interconnection 20, vertical passage 22, a pair of wall bone 26 and two pairs of location wall skeletons 28,30 of stopping.But be formed with reflector layer 40 on offset from side wall 12 surfaces, be formed with infrared absorption layer 44 at chip 10 back sides towards vertical passage 22.Thin plate 32 is bonded to the big portion of chip 10 surfaces with seal chamber 14, the whole interconnections 20 of covering and vertical passage 22.One single-mode fiber 24 insert vertical passages 22 and with stop wall bone 26 and offset.One droplet bonding agent 34 puts on zone, seal channel mouth and the fixed fiber 24 that optical fiber 24 and vertical passage 22 are not covered by thin plate 32.
Also substantially with shown in Fig. 2 A-2G, difference is as follows for the making step of said structure:
A) form interconnection 20 rather than interconnection 18;
B) omit etch resistant layer 42;
C) back of the body of silicon substrate 10 is deposited with black bismuth infrared absorption layer;
D) form seal chamber 14 rather than cavity 16 and vertical passage 22;
E) sealing technology is under 300-400 ℃ of condition, and Pyrex glass anode is bonded to the surface of chip 10 or low-melting alloy is bonded to chip 10 surfaces;
F) be sealed in the plenum chamber and carry out.
More than to the explanation of four kinds of most preferred embodiment structures and method for making, be interpreted as by spirit of the present invention, can do the deformation design and the processing of multiple optical fibre thermosensitive device.
Claims (13)
1, a kind of optical fibre thermosensitive device, it is characterized in that: comprise the thermal expansion element that is produced on the silicon substrate, be produced on the reflective mirror on the thermal expansion element, the optical fiber guide channel that is produced on the silicon chip substrate vertically is connected to the reflective mirror place, stopping wall bone and location wall skeleton and inserting in the optical fiber guide channel to stop that the wall bone blocks and with the single mode optical fibre of location wall skeleton location of paired making arranged in the optical fiber guide channel.
2, optical fibre thermosensitive device according to claim 1 is characterized in that described thermal expansion element is a seal chamber that is filled with big gas of thermal expansivity or liquid.
3, optical fibre thermosensitive device according to claim 1 and 2, but it is characterized in that described reflective mirror is the reflector layer that is deposited on one of described seal chamber and the offset from side wall that atmospheric environment communicates.
4, optical fibre thermosensitive device according to claim 1 is characterized in that on described thermal expansion element and the most of optical fiber guide channel covering thin plate being arranged.
5, optical fibre thermosensitive device according to claim 1 is characterized in that described thermal expansion element is the optical fiber guide channel that is deposited with reflector layer on the madial wall.
6, optical fibre thermosensitive device according to claim 1 and 2 is characterized in that being deposited with layer of resist in the described seal chamber.
7, optical fibre thermosensitive device according to claim 1 and 2 is characterized in that there is infrared absorption layer at the silicon chip back side that is manufactured with seal chamber and optical fiber guide channel.
8, a kind of manufacture method of optical fibre thermosensitive device as claimed in claim 1 is characterized in that it being to adopt following steps:
A) preparation (110) silicon substrate;
B) with right<100〉and<110〉direction corrosion speeds are faster than right<111〉anisotropic etchant of about 50 times of direction corrosion speeds, corrosion is made and is stopped wall bone, location wall skeleton in thermal expansion element, optical fiber guide channel and the passage on described silicon substrate;
C) the compound reflecting layer of on the sidewall oxide of thermal expansion element, forming by silicon nitride, titanium layer and gold layer with the chemical vapor deposition deposit;
D) silicon chip is divided into chip;
E) on thermal expansion element and most of optical fiber guide channel, cover the covering thin plate;
F) insert the optical fiber guide channel from the outside with single mode optical fibre, with stop the wall bone photo and support, and be clamped in channel center place with location wall skeleton, single mode optical fibre is fixed on the substrate of optical fiber guide channel outer end by Technology for Heating Processing with multipolymer, and the seal channel mouth.
9, the manufacture method of optical fibre thermosensitive device according to claim 8 is characterized in that described e step, is filling thermal expansion gas or filling thermally-expansible liquid at room temperature in the plenum chamber under 300-400 ℃ or the room temperature.
10, the manufacture method of optical fibre thermosensitive device according to claim 8, it is characterized in that described cover to hide thin plate on thermal expansion element and optical fiber guide channel be with Pyrex glass, under 300-400 ℃ of condition, be bonded on the chip surface with the anode adhesive method.
11, the manufacture method of optical fibre thermosensitive device according to claim 8 is characterized in that covering the covering thin plate on described thermal expansion element and the optical fiber guide channel is to be coated with 7570
#The silicon chip of sheets of glass at room temperature, is bonded on the chip surface with the anode adhesive method.
12, the manufacture method of optical fibre thermosensitive device according to claim 8 is characterized in that described cover to hide thin plate on thermal expansion element and optical fiber guide channel be with low-melting alloy, is bonded on the chip surface with adhesive method.
13, the manufacture method of optical fibre thermosensitive device according to claim 8, it is characterized in that described step c after, at the silicon substrate of described thermal expansion element and the optical fiber guide channel back of the body, with black bismuth deposit infrared absorption layer.
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CN92113322A CN1040050C (en) | 1992-12-01 | 1992-12-01 | Optical fiber thermosensitive device and manufacturing method thereof |
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CN92113322A CN1040050C (en) | 1992-12-01 | 1992-12-01 | Optical fiber thermosensitive device and manufacturing method thereof |
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CN1040050C CN1040050C (en) | 1998-09-30 |
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CN109655209A (en) * | 2019-01-30 | 2019-04-19 | 杭州坦布科技有限公司 | A kind of sealing property of ball valves test equipment and test method |
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US4756627A (en) * | 1984-08-17 | 1988-07-12 | Sperry Corporation | Optical temperature sensor using photoelastic waveguides |
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CN109655209A (en) * | 2019-01-30 | 2019-04-19 | 杭州坦布科技有限公司 | A kind of sealing property of ball valves test equipment and test method |
CN109655209B (en) * | 2019-01-30 | 2020-09-08 | 博纳斯威阀门股份有限公司 | Ball valve sealing performance testing equipment and testing method |
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