CN108736837A - A kind of built-in single ended input slip divides the low-noise amplifier of export structure - Google Patents
A kind of built-in single ended input slip divides the low-noise amplifier of export structure Download PDFInfo
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- CN108736837A CN108736837A CN201810493883.2A CN201810493883A CN108736837A CN 108736837 A CN108736837 A CN 108736837A CN 201810493883 A CN201810493883 A CN 201810493883A CN 108736837 A CN108736837 A CN 108736837A
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- Prior art keywords
- amplifying circuit
- nmos transistor
- circuit
- built
- low
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
- H04B1/1009—Placing the antenna at a place where the noise level is low and using a noise-free transmission line between the antenna and the receivers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses the low-noise amplifiers that a kind of built-in single ended input slip divides export structure, it is related to radio-frequency communication technical field, including input matching circuit and output loading match circuit, further include the first order amplifying circuit being connected with each other and second level amplifying circuit, the input matching circuit is connect with the first order amplifying circuit, the first order amplifying circuit is connect with the second level amplifying circuit, and the second level amplifying circuit is connect with the output loading match circuit.The advantages of this structure is that area is small, cost-effective, is not necessarily to external matching circuit, is verified through practical flow, and the sensitivity of the traditional structure for the input tape balun that compares, the structure has the promotion of 2-3dB.
Description
Technical field
The present invention relates to radio-frequency communication technical fields more particularly to a kind of built-in single ended input slip to divide the low of export structure
Noise amplifier.
Background technology
With the fast development of wireless communication technique and CMOS integrated circuit technologies, wireless terminal miniaturization, low-power consumption,
Low cost, high-performance have become the inexorable trend of RF IC (RFIC) development.
In radio-frequency transmitter design, good overall system performance is obtained, key is the front end of superior performance.It penetrates
The first order module low-noise amplifier (LNA) of frequency receiver is one of the circuit of wherein most critical, and LNA needs to have good
Noise coefficient, and enough gains are provided, to ensure that entire reception system has minimum NF；Simultaneously when reception signal is larger,
There should be enough linearities to reduce distorted signals.In addition the prime of low-noise amplifier is usually discrete radio frequency bandpass filtering
Device, since transmission characteristic and the connect load of terminal of filter have much relations, the input impedance of low-noise amplifier that must accord with
The regulation of filter is closed, in RF application, which is typically set at 50 ohm unified of a pure resistance value.
Current radio frequency receiver front end module LNA and mixer operational version mainly has：Single-ended LNA and single balance mixer；
Piece outer Balun, difference LNA and double balanced mixer；And single ended input difference output LNA and double balanced mixer.
With the raising of circuit level, in particular with the SOC that RF circuits and Baseband circuits are integrated
Development, Substrate Coupling Noise becomes increasingly severe, and single-ended amplifier, mixer etc. couple no rejection ability, lining to substrate
Bottom couples with understanding extreme influence low-noise amplifier and mixer performance, and the performance of system receiver is finally made to have a greatly reduced quality.
Difference LNA and double balanced mixer scheme can preferable suppression common mode noise influence, but need to use one
The single-ended signal that antenna receives is converted into differential signal by additional balanced to unbalanced transformer Balun.Fig. 1 is that 2.4G LNA include
The course of work of the conventional architectures of Balun, this structure is：The signal to come from antenna turns single-ended signal by Balun
It is changed to after double-end signal, gives the LNA input terminals of fully differential amplifying circuit.The advantages of this structure is without additional matching electricity
Road, system are simpler；Its major defect is that Balun areas are very big, increases chip cost；Balanced to unbalanced transformer is difficult simultaneously
On piece is integrated, needs to use piece external component, and can introduce the loss of 1-3dB, this will substantially reduce the sensitive of radio-frequency transmitter
It spends (about 1-3dB), reduces the integrated level and performance of system, improve system cost.
Therefore, those skilled in the art is dedicated to developing the low noise that a kind of built-in single ended input slip divides export structure
Amplifier can complete the single-ended function of turning both-end, and be amplified to output by cathode-input amplifier, drive late-class circuit.
Invention content
In view of the drawbacks described above of the prior art, the technical problem to be solved by the present invention is to：
1, the signal from antenna and amplification are received, itself there is very low noise and is provided after enough gains have inhibited
The noise of continuous circuit.
2, the output impedance for matching antenna, to obtain maximum signal power from antenna.
In practical applications, after meeting system index requirement, LNA can more pay close attention to power consumption and area.With existing
In the requirement for reducing chip cost and power consumption, the LNA of traditional 2.4G due to structure limitation in some applications gradually
It cannot meet the requirements.
To achieve the above object, the present invention provides the low noise amplifications that a kind of built-in single ended input slip divides export structure
Device, the structure are applied in the radio frequency reception access first order, including input matching circuit and output loading match circuit, further include phase
The first order amplifying circuit and second level amplifying circuit to connect, the input matching circuit connect with the first order amplifying circuit
It connects, the first order amplifying circuit is connect with the second level amplifying circuit, and the second level amplifying circuit and the output are negative
Carry match circuit connection.
Further, the first order amplifying circuit includes a NMOS transistor M1 and a NMOS transistor M2, described
NMOS transistor M1 amplifies aerial signal, and drain signal and grid signal differ 180 °；The drain electrode of the NMOS transistor M1
By capacitance C3 connection NMOS transistor M2 grids, the single-ended function of turning both-end is completed.
Further, the second level amplifying circuit includes a NMOS transistor M3 and a NMOS transistor M4, described
The source electrode of the drain electrode connection NMOS transistor M3 of NMOS transistor M1, the drain electrode connection NMOS transistor M4's of NMOS transistor M2
Source electrode.
Further, the input matching circuit includes an a capacitance C1 and inductance L1, the first order amplifying circuit
NMOS transistor M1 grids connect the capacitance C1 and inductance L1, one end of capacitance C1 and the inductance L1 and the NMOS crystal
The grid of pipe M1 is connected, and the other end of capacitance C1 is connected to ground.
Further, the output loading match circuit include a capacitance C2 and inductance a L2, the capacitance C2 with it is described
Inductance L2 is connected in parallel.
Further, the first order amplifying circuit is common source amplifying circuit.
Further, the second level amplifying circuit is total grid amplifying circuit.
Further, the capacitance C2 and inductance L2 is to be connected in series with.
Advantages of the present invention is：
1, built-in matching network.The input impedance of this LNA is：
C1=0.4p, Cgs=0.1p, L1=6.8nH, Lbonding=2nH
LbondingFor the parasitic inductance of bonding lines reality is provided for input matching network generally between 1nH~5nH
Portion；C1 can reduce the imaginary part of matching network and increase real part, reduce susceptibility of the matching network to input pipe Cgs.
2, have the function of that single ended input turns difference output, avoid the power attenuation of Balun introducings, improve NF, and
Reduce the area of LNA.Input signal completes 180 ° of phase shift after M1 amplifies, in the drain terminal of M1, send to the grid of M2, completes
Single ended input turns the function of difference output.
The advantages of this structure is that area is small, cost-effective, is not necessarily to external matching circuit.It verifies, compares through practical flow
Compared with the traditional structure of input tape balun, the sensitivity of the structure has the promotion of 2-3dB.
The technique effect of the design of the present invention, concrete structure and generation is described further below with reference to attached drawing, with
It is fully understood from the purpose of the present invention, feature and effect.
Description of the drawings
Fig. 1 is traditional amplifier circuit in low noise structure；
Fig. 2 is that the built-in single ended input slip of the preferred embodiment of the present invention divides the low-noise amplifier of export structure
Circuit structure.
Specific implementation mode
Multiple preferred embodiments that the present invention is introduced below with reference to Figure of description, keep its technology contents more clear and just
In understanding.The present invention can be emerged from by many various forms of embodiments, and protection scope of the present invention not only limits
The embodiment that Yu Wenzhong is mentioned.
In the accompanying drawings, the identical component of structure is indicated with same numbers label, everywhere the similar component of structure or function with
Like numeral label indicates.The size and thickness of each component shown in the drawings are to be arbitrarily shown, and there is no limit by the present invention
The size and thickness of each component.In order to keep diagram apparent, some places suitably exaggerate the thickness of component in attached drawing.
As shown in Fig. 2, a kind of built-in single ended input slip divides the low-noise amplifier of export structure, which, which applies, is penetrating
The frequency receiving path first order, including input matching circuit and output loading match circuit further include that the first order being connected with each other is put
Big circuit and second level amplifying circuit, input matching circuit are connect with first order amplifying circuit, first order amplifying circuit and second
Grade amplifying circuit connection, second level amplifying circuit are connect with output loading match circuit.
First order amplifying circuit includes an a NMOS transistor M1 and NMOS transistor M2, and NMOS transistor M1 amplifies antenna
Signal, drain signal and grid signal differ 180 ° of amplification input signals, and the drain electrode of NMOS transistor M1 passes through capacitance
C3 connection NMOS transistor M2 grids complete the single-ended function of turning both-end, instead of the function of the balun in Fig. 1；Amplify the second level
Circuit is made of cascode pipes, provides certain gain and shielding LNA outputs and input, including a NMOS transistor M3 and one
The source electrode of the drain electrode connection NMOS transistor M3 of NMOS transistor M4, NMOS transistor M1, the drain electrode connection of NMOS transistor M2
The source electrode of NMOS transistor M4.First order amplifying circuit is common source amplifying circuit.Second level amplifying circuit is total grid amplifying circuit.
Input matching circuit carries out impedance matching, including an a capacitance C1 and inductance L1, first order amplification with piece outside antenna
The NMOS transistor M1 grids of circuit connect capacitance C1 and inductance L1, and one end of capacitance C1 is with inductance L1's and NMOS transistor M1
Grid is connected, and the other end of capacitance C1 is connected to ground.
Output loading match circuit is inductor capacitor resonant circuit LC tank, as the load of LNA, and can pass through tune
Load capacitance is saved to adjust gain peak points (maximum gain of antenna), output loading match circuit includes the electricity of a capacitance C2 and one
Feel L2, capacitance C2 is connected in parallel or is connected in series with inductance L2.
The course of work of circuit of the present invention is：Signal from antenna via built-in input resistant matching network to M1,
M1 amplifies aerial signal, and M1 drain signals and grid signal differ 180 °；M1 drain signals are sent to M2 grids and are amplified, and complete
The double function of single-turn；M1 drain signals and M2 drain signals are amplified to output, driving rear class electricity by cascode pipes M3 and M4 again
Road.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that the ordinary skill of this field is without wound
The property made labour, which according to the present invention can conceive, makes many modifications and variations.Therefore, all technician in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Scheme, all should be in the protection domain being defined in the patent claims.
Claims (8)
1. a kind of built-in single ended input slip divides the low-noise amplifier of export structure, including input matching circuit and output loading
Match circuit, which is characterized in that further include the first order amplifying circuit being connected with each other and second level amplifying circuit, the input
It is connect with the first order amplifying circuit with circuit, the first order amplifying circuit is connect with the second level amplifying circuit, institute
Second level amplifying circuit is stated to connect with the output loading match circuit.
2. built-in single ended input slip as described in claim 1 divides the low-noise amplifier of export structure, which is characterized in that institute
It includes a NMOS transistor M1 and a NMOS transistor M2, the NMOS transistor M1 amplifications antenna letter to state first order amplifying circuit
Number, drain signal and grid signal differ 180 °；The drain electrode of the NMOS transistor M1 passes through capacitance C3 connections NMOS
Transistor M2 grids complete the single-ended function of turning both-end.
3. built-in single ended input slip as described in claim 1 divides the low-noise amplifier of export structure, which is characterized in that institute
The drain electrode that second level amplifying circuit includes a NMOS transistor M3 and NMOS transistor a M4, the NMOS transistor M1 is stated to connect
The source electrode of NMOS transistor M3, the source electrode of the drain electrode connection NMOS transistor M4 of NMOS transistor M2.
4. built-in single ended input slip as described in claim 1 divides the low-noise amplifier of export structure, which is characterized in that institute
It includes an a capacitance C1 and inductance L1 to state input matching circuit, and the NMOS transistor M1 grids of the first order amplifying circuit connect
The capacitance C1 and inductance L1, one end of capacitance C1 are connected with the grid of the inductance L1 and the NMOS transistor M1, capacitance
The other end of C1 is connected to ground.
5. built-in single ended input slip as described in claim 1 divides the low-noise amplifier of export structure, which is characterized in that institute
It includes a capacitance C2 and an inductance L2 to state output loading match circuit, and the capacitance C2 is connected in parallel with the inductance L2.
6. built-in single ended input slip as described in claim 1 divides the low-noise amplifier of export structure, which is characterized in that institute
It is common source amplifying circuit to state first order amplifying circuit.
7. built-in single ended input slip as described in claim 1 divides the low-noise amplifier of export structure, which is characterized in that institute
It is total grid amplifying circuit to state second level amplifying circuit.
8. built-in single ended input slip as claimed in claim 5 divides the low-noise amplifier of export structure, which is characterized in that institute
It is to be connected in series with to state the capacitance C2 and inductance L2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810493883.2A CN108736837A (en) | 2018-05-22 | 2018-05-22 | A kind of built-in single ended input slip divides the low-noise amplifier of export structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810493883.2A CN108736837A (en) | 2018-05-22 | 2018-05-22 | A kind of built-in single ended input slip divides the low-noise amplifier of export structure |
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| Publication Number | Publication Date |
|---|---|
| CN108736837A true CN108736837A (en) | 2018-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810493883.2A Pending CN108736837A (en) | 2018-05-22 | 2018-05-22 | A kind of built-in single ended input slip divides the low-noise amplifier of export structure |
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Citations (10)
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|---|---|---|---|---|
| US20080136521A1 (en) * | 2006-12-06 | 2008-06-12 | Yuyu Chang | Method and system for a low power fully differential noise cancelling low noise amplifier |
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
| US7834703B2 (en) * | 2008-08-19 | 2010-11-16 | Texas Instruments Incorporated | Amplifier with single-ended input and differential output |
| CN101904091A (en) * | 2007-12-18 | 2010-12-01 | 高通股份有限公司 | Low noise and low input capacitance differential MDS LNA |
| CN102647157A (en) * | 2012-04-10 | 2012-08-22 | 江苏天源电子有限公司 | Single-ended input differential output type radio frequency low-noise amplifier |
| CN203590166U (en) * | 2013-08-09 | 2014-05-07 | 成都国腾电子技术股份有限公司 | Single-to-differential low noise amplifier with highly balanced and stable difference output gain phase |
| US20140159812A1 (en) * | 2012-03-19 | 2014-06-12 | KAIST (Korea Advanced Institute of Science and Technology) | Signal converting apparatus and receiving apparatus for supporting concurrent dual bands in wireless communication system |
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2018
- 2018-05-22 CN CN201810493883.2A patent/CN108736837A/en active Pending
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|---|---|---|---|---|
| US20080136521A1 (en) * | 2006-12-06 | 2008-06-12 | Yuyu Chang | Method and system for a low power fully differential noise cancelling low noise amplifier |
| CN101904091A (en) * | 2007-12-18 | 2010-12-01 | 高通股份有限公司 | Low noise and low input capacitance differential MDS LNA |
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
| US7834703B2 (en) * | 2008-08-19 | 2010-11-16 | Texas Instruments Incorporated | Amplifier with single-ended input and differential output |
| US20140159812A1 (en) * | 2012-03-19 | 2014-06-12 | KAIST (Korea Advanced Institute of Science and Technology) | Signal converting apparatus and receiving apparatus for supporting concurrent dual bands in wireless communication system |
| CN102647157A (en) * | 2012-04-10 | 2012-08-22 | 江苏天源电子有限公司 | Single-ended input differential output type radio frequency low-noise amplifier |
| CN203590166U (en) * | 2013-08-09 | 2014-05-07 | 成都国腾电子技术股份有限公司 | Single-to-differential low noise amplifier with highly balanced and stable difference output gain phase |
| CN106063125A (en) * | 2014-02-28 | 2016-10-26 | 瑞典爱立信有限公司 | A low noise amplifier circuit |
| CN107148749A (en) * | 2014-10-29 | 2017-09-08 | 高通股份有限公司 | Transformer feedback amplifier |
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