CN108735903A - A method of perovskite thin film is carried out using fluoro fatty amine hydrophobically modified - Google Patents
A method of perovskite thin film is carried out using fluoro fatty amine hydrophobically modified Download PDFInfo
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- CN108735903A CN108735903A CN201810306113.2A CN201810306113A CN108735903A CN 108735903 A CN108735903 A CN 108735903A CN 201810306113 A CN201810306113 A CN 201810306113A CN 108735903 A CN108735903 A CN 108735903A
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- 239000010409 thin film Substances 0.000 title claims abstract description 71
- 150000001412 amines Chemical class 0.000 title claims abstract description 35
- 125000001153 fluoro group Chemical group F* 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000012986 modification Methods 0.000 claims abstract description 36
- 230000004048 modification Effects 0.000 claims abstract description 35
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 25
- 125000003368 amide group Chemical group 0.000 claims abstract description 4
- 239000005416 organic matter Substances 0.000 claims description 16
- KIPSRYDSZQRPEA-UHFFFAOYSA-N 2,2,2-trifluoroethanamine Chemical group NCC(F)(F)F KIPSRYDSZQRPEA-UHFFFAOYSA-N 0.000 claims description 12
- GVDAXSWUPRQVBQ-UHFFFAOYSA-N C(CCC)N.[F] Chemical compound C(CCC)N.[F] GVDAXSWUPRQVBQ-UHFFFAOYSA-N 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 230000003993 interaction Effects 0.000 claims description 3
- 238000003958 fumigation Methods 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- -1 amine compound Chemical class 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000003960 organic solvent Substances 0.000 abstract 2
- MDQRDWAGHRLBPA-UHFFFAOYSA-N fluoroamine Chemical compound FN MDQRDWAGHRLBPA-UHFFFAOYSA-N 0.000 abstract 1
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical group ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 21
- 239000000243 solution Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 230000005611 electricity Effects 0.000 description 5
- 238000001453 impedance spectrum Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005034 decoration Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 150000002896 organic halogen compounds Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000013112 stability test Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YTEUDCIEJDRJTM-UHFFFAOYSA-N 2-(chloromethyl)benzoic acid Chemical class OC(=O)C1=CC=CC=C1CCl YTEUDCIEJDRJTM-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- MCWXGJITAZMZEV-UHFFFAOYSA-N dimethoate Chemical compound CNC(=O)CSP(=S)(OC)OC MCWXGJITAZMZEV-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005213 imbibition Methods 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000003956 methylamines Chemical class 0.000 description 1
- IVUHDTWRNCXVCD-UHFFFAOYSA-N methylazanium;iodate Chemical class [NH3+]C.[O-]I(=O)=O IVUHDTWRNCXVCD-UHFFFAOYSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A method of perovskite thin film is carried out using fluoro fatty amine hydrophobically modified.Fluoro fat amine compound is dissolved in a certain concentration in organic solvent.Obtained solution is formed on and forms it into the atmosphere containing organic solvent and fluoro fatty amine in a closed container.The perovskite thin film prepared is placed in this atmosphere, the perovskite thin film of hydrophobic modification is obtained by amido on fluoroamine and perovskite formation hydrogen bond.This method can significantly improve the hydrophobicity and moisture resistance of perovskite thin film, and then improve the stability of perovskite battery；The introducing of decorative material makes the resistance of inside battery be substantially reduced simultaneously, and inside battery interface charge efficiency of transmission improves, this is significant to its practical application.
Description
Technical field
The present invention relates to perovskite solar cells to develop and use research field, and in particular to a kind of raising perovskite is thin
The hydrophobic method of modifying of film, it is characterised in that the perovskite thin film prepared is placed in by a certain concentration (1~4vol%)
In the closed atmosphere that fluoro fatty amine solution evaporation is formed, hydrogen bond is formed with perovskite thin film surface by amido on fluorine amine by is obtained
Obtain the perovskite thin film of hydrophobic modification.This method can significantly improve the hydrophobicity and moisture resistance of perovskite thin film, and then improve
The stability of perovskite battery, it is significant to its practical application.
Background technology
It is introduced in solar cell, quickly grows for the first time from organohalogen compounds perovskite material in 2009,
In a few years, risen to by initial 3.8% with its photoelectric conversion efficiency for the solar cell of main material preparation
Present 22.7%, development speed is fast, has far been more than other film class solar cells.Although perovskite battery is ground
Study carefully and have been achieved for encouraging progress, but still suffer from some challenges, wherein most importantly its stability problem.
Perovskite shows lower tolerance, such as moisture, oxygen, ultraviolet light etc. to environmental factor.Wherein moisture is to perovskite
The influence of stability test is particularly acute, and the decline of device performance, unstability can be caused seriously to hinder perovskite photovoltaic
The application of technology.And perovskite extinction film in perovskite battery is subjected to hydrophobic modification, its resilience to humidity is improved,
It is an effective ways for improving perovskite stability test, it is necessary that research is carried out to it.
Hydrophobic modification is a kind of means being effectively protected perovskite.Document " Thiols as Interfacial
Modifiers to Enhance the Performance and Stability of Perovskite Solar Cells”
(Nanoscale, 2015,7,9443-9447) report uses the hydrophobic molecule for containing sulfydryl as modifying interface material, due to Pb-S
The formation of coordinate bond can form a monolayer (SAM) on perovskite surface.This completely hydrophobic protective layer can successfully hinder
Sealing molecule enters perovskite thin film.This surface modification is effectively improved the stability of perovskite in the environment.Do not repair
The 20% of the only surplus starting efficiency of photoelectric conversion efficiency (PCE) after the device of decorations is placed 10 days in air, and use HS-PhF5Modification
Device PCE still can keep 80% or more starting efficiency under the conditions of same afterwards.Similarly, with AM1.5G continuous illuminations, do not have
There is the PCE of mercapto-modified device to decay in 50min more than half, and uses HS-PhF5The device of modification is more than 200 in illumination
Minute can just make performance degradation to equal extent.Document " Bifunctional Alkyl Chain Barriers for
Efficient Perovskite Solar Cells”(Chemicals Communications,2015,51,7047-7050)
It reports and long-chain (dodecyl) is assembled in perovskite/TiO2Hydrophobic layer is formed on interface.This modification can be perovskite
Surface becomes hydrophobicity by hydrophily, and the stability of device is also improved.Through comparing, with the hydride modified rear devices of C12-
The performances such as stability, short circuit current are obtained for raising.Store 600 hours in atmospheric environment, unencapsulated C12- silane is still
It can keep the 85% of starting efficiency.Document " Improved Performance and Stability of Perovskite
Solar Cells by Crystal Crosslinking with Alkylphosphonic Acidω-Ammonium
Chlorides " (Nature Chemistry, 2015,7,703-711) is found that one by adding phosphamide to improve device
Moisture resistance method.Assembling perovskite thin film process precursor solution in add 4- amido fourth p chloromethylbenzoic acids, make it with
Adjacent perovskite crystal passes through-PO (OH)2 -With-NH3 +Between the hydrogen bond that is formed perovskite is connected, cause perovskite
Layer is more uniform, reduces the exposure of crystal boundary in perovskite, and is effectively improved resisting property of the device to water, causes device
Stability greatly improves.Document " A Polymer Scaffold for Self-Healing Perovskite Solar
Cell " (Nature Communication, 2016,7,10228) uses the polymer P EG of the moisture absorption as shelf layer, the shelf layer
Perovskite thin film can be stablized, ensure that the moisture-proof and stability of device.Interestingly, shelf layer has stronger self-regeneration
Property.The raising of stability and self-regeneration effect are attributed between the good water imbibitions of PEG and PEG and perovskite strong mutual
Effect.PEG molecules can form the outside that fine and close moisture barrier layer makes water be blocked on perovskite.Due to methylamine salt (MAI) and
Strong interaction between PEG, when perovskite is exposed in moisture, MAI molecules can adsorb on nigh PEG.Moment point
Solve-live again the quick repair process that mechanism explains PEG shelf layer perovskite thin films.Item of the unpackaged device in high humility
The height output for being held up to 300h is remained under part (70% relative humidity).Above-mentioned document is by distinct methods by different materials
It modifies in perovskite, to improve the hydrophobicity of perovskite thin film and the stability of battery, but the introducing of decorative material can increase
The interface resistance of inside battery, reduces the photoelectric conversion efficiency of battery, therefore develops one kind can to improve perovskite thin film hydrophobic
Property, and the decorative material that can improve inside battery interface charge efficiency of transmission is necessary.
Organohalogen compounds perovskite hydrophobic modification based on the present invention is by the way that perovskite thin film obtained to be placed in centainly
The fluoro fatty amines organic solution of concentration (1~4vol%), which is volatilized, to be completed in the closed atmosphere to be formed.Modification process is simple, item
Mild, at low cost, the required equipment of part is simple, is easily industrialized production.By the modification of fluorine-containing fat subsitutes amine organic matter,
The stability of the hydrophobic performance that perovskite thin film can be effectively improved, the perovskite battery built on this basis is remarkably reinforced,
And fluorine amine organic matter is introduced by it, the internal resistance of perovskite solar cell is reduced, enhancing perovskite thin film is passed with electronics
The separation of charge of charge at defeated bed boundary, improves the photoelectric conversion efficiency of battery to a certain extent.
Invention content
The object of the present invention is to provide a kind of hydrophobic method of modifying of raising perovskite thin film.It is characterized in that will prepare
Perovskite thin film be placed in the fluoro fatty amines organic solution of a certain concentration (1~4vol%) and volatilize the closed atmosphere to be formed
In, the perovskite that hydrophobic modification is obtained by amido on fluoro fatty amines organic matter and the interaction on perovskite surface is thin
Film.The perovskite modified according to the present invention finds that its hydrophobic performance is obviously improved after a test, and battery is stablized after assembled battery
Property obviously increases, this is significant to its Future Development and practical application.
The hydrophobic method of modifying of perovskite thin film of the present invention.Including following steps：
Step 1：Deionized water, acetone, isopropanol is used to be ultrasonically treated respectively 15 minutes FTO electro-conductive glass, post-plasma treated
10 minutes；
Step 2：0.5mmol lead iodides, 0.5mmol lead chlorides and 2mmol iodate methylamines are dissolved in 1 milliliter of N, N- dimethyl formyls
Perovskite precursor solution is obtained in amine；
Step 3：The spin coating perovskite precursor solution on the FTO electro-conductive glass handled well, after anneal under 100 degrees celsius
Processing obtains perovskite thin film in 10 minutes, is cooled to room temperature；
Step 4：By the fluoro fatty amines of the electro-conductive glass obtained with perovskite thin film and a certain concentration (1-4vol%)
Organic solution is collectively disposed in closed container, thin in 0-60 degrees Celsius of lower perovskite suffocating treatment 0-3 hours, modified
Film.
Wherein fluoro fatty amines organic matter is 2,2,2- trifluoroethylamines, seven fluorine butylamine of 2,2,3,3,4,4,4- and 1H, 1H-
Perfluoro capryl amine.
The solvent of wherein dissolving fluoro fatty amines organic matter is dichloromethane.
The wherein a concentration of 1-4vol% of fluoro fatty amines organic solution.
The beneficial effects of the present invention are：Propose a kind of novel perovskite thin-film hydrophobic method of modifying.This method passes through
It perovskite thin film obtained is placed in fluoro fatty amines organic solution volatilizees and can be completed in the closed atmosphere to be formed, prepare
Processes and apparatus is simple, preparation condition is mild, is easily industrialized production.It is modified by fluoro fatty amines organic matter thin
Film can effectively improve contact angle of the water on perovskite thin film, that is, improve its hydrophobic ability.The perovskite battery built with this
Stability obviously increases, and introduces fluoro fatty amines organic matter, enhancing perovskite thin film and electron-transport stratum boundary by it
The separation of charge of charge at face improves the photoelectric conversion efficiency of battery to a certain extent.
Description of the drawings
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is modification schematic diagram of the present invention.It can be seen from the figure that 1 indicates fluoro fatty amines organic solution,
2 indicate the FTO electro-conductive glass with perovskite thin film.
Fig. 2 is the front and back contact angle test result of perovskite thin film modification.1 indicates unmodified perovskite thin film contact
Angle, 2 indicate the perovskite thin film contact angle of 2,2,2- trifluoroethylamines modification, and 3 indicate the perovskite of 2,2,2- trifluoroethylamines modification
Film contacts angle, 4 indicate the perovskite thin film contact angle of 2,2,2- trifluoroethylamines modification, it can be seen from the figure that, calcium titanium after modification
The hydrophobic performance of mine film is improved.
Fig. 3 is the impedance spectra that solar cell is assembled into using the front and back perovskite thin film of modification.1 indicates not repair in figure
Decorations perovskite thin film is assembled into the impedance spectra of battery, and 2 expression 2,2,2- trifluoroethylamines modification perovskite thin films are assembled into battery
Impedance spectra, 3 expression 2,2,3,3,4,4,4- seven fluorine butylamine modification perovskite thin films are assembled into the impedance spectra of battery, 4 tables
Show that 1H, the amine-modified perovskite thin film of 1H- perfluoro capryls are assembled into the impedance spectra of battery, 5 indicate to be fitted battery impedance data
Equivalent circuit diagram used.It can be obtained from figure, after the modification of fluoro fatty amines organic matter, the internal resistance of battery is different
The reduction of degree, and combined resistance has different degrees of raising, it was demonstrated that it can improve battery after the modification of fluoro fatty amines organic matter
Performance.
Fig. 4 is the current density and voltage relationship figure that solar cell is assembled into using the front and back perovskite thin film of modification.
1 indicates that unmodified perovskite thin film is assembled into the current density and voltage relationship figure of battery in figure, and 2 indicate 2,2,2- trifluoroethylamines
Modification perovskite thin film is assembled into the current density and voltage relationship figure of battery, and 32,2,3,3,4,4,4- seven fluorine butylamine of expression are repaiied
Decorations perovskite thin film is assembled into the current density and voltage relationship figure of battery, and 4 indicate 1H, the amine-modified perovskite of 1H- perfluoro capryls
Film is assembled into the current density and voltage relationship figure of battery.It can be seen from the figure that being modified in fluoro fatty amines organic matter
Later, the photoelectric property of battery has different degrees of raising.
Fig. 5 is the electricity conversion and time relationship that solar cell is assembled into using the front and back perovskite thin film of modification
Figure.1 indicates that unmodified perovskite thin film is assembled into the electricity conversion and time chart of battery in figure, and 2 indicate 2,2,2-
Trifluoroethylamine modification perovskite thin film is assembled into the electricity conversion and time chart of battery, and 3 indicate 2,2,3,3,4,4,
Seven fluorine butylamine of 4- modification perovskite thin film is assembled into the electricity conversion and time chart of battery, and 4 indicate 1H, 1H- perfluors
The amine-modified perovskite thin film of octyl is assembled into the electricity conversion and time chart of battery.It can be seen from the figure that in fluorine
After the modification of fat subsitutes amine organic matter, the stability of battery significantly improves.
Specific implementation mode
Embodiment 1：It is thin using its steam modification perovskite with 2,2,2- trifluoroethylamines as fluoro fatty amines organic matter
Film improves hydrophobic performance.1 microlitre of 2,2,2- trifluoroethylamine is dissolved in 1 milliliter of dichloromethane solution first and obtains fluoro fatty amine
Organic solution.By the perovskite thin film prepared and 2,2,2- trifluoroethylamine solution are positioned in same closed container, in heat
It is heated to 35 degrees Celsius on platform, ensures that solution fully volatilizees for steam and acted on perovskite thin film.Then moditied processing is complete
The complete FTO electro-conductive glass with perovskite thin film is placed in thermal station, and 10 minutes are heated under 40 degrees Celsius to remove perovskite
The dichloromethane solvent adsorbed in film finally obtains the perovskite thin film of 2,2,2- trifluoroethylamines modification.
Embodiment 2：With 2,2,3,3,4,4,4- seven fluorine butylamine as fluoro fatty amines organic matter, modified using its steam
Perovskite thin film improves hydrophobic performance.1 microlitre of seven fluorine butylamine of 2,2,3,3,4,4,4- is dissolved in 1 milliliter of dichloromethane solution first
In obtain fluoro fat amine aqueous solution.The perovskite thin film prepared and seven fluorine butylamine solution of 2,2,3,3,4,4,4- are positioned over together
In one closed container, 35 degrees Celsius are heated in thermal station, ensures that solution fully volatilizees for steam and acted on perovskite thin film.So
The FTO electro-conductive glass with perovskite thin film that moditied processing finishes is placed in thermal station afterwards, 10 points are heated under 40 degrees Celsius
Clock finally obtains the calcium of 2,2,3,3,4,4,4- seven fluorine butylamine modification to remove the dichloromethane solvent adsorbed in perovskite thin film
Titanium ore film.
Embodiment 3：With 1H, 1H- perfluoro capryls amine modifies perovskite as fluoro fatty amines organic matter, using its steam
Film improves hydrophobic performance.First by 1 microlitre of 1H, 1H- perfluoro capryl amine, which is dissolved in 1 milliliter of dichloromethane solution, obtains fluoro fat
Fat amine organic solution.By the perovskite thin film prepared and 1H, 1H- perfluoro capryl amine aqueous solutions are positioned over same closed container
In, it is heated to 35 degrees Celsius in thermal station, ensures that solution fully volatilizees for steam and acted on perovskite thin film.It afterwards will be at modification
It manages the FTO electro-conductive glass with perovskite thin film finished to be placed in thermal station, 10 minutes is heated under 40 degrees Celsius to go deliming
The dichloromethane solvent adsorbed in titanium ore film finally obtains 1H, the amine-modified perovskite thin film of 1H- perfluoro capryls.
Sensitized nanocrystalline solar cell photoelectric pole barrier layer prepared by the present invention is by directly thermally decomposing the nickel of atomization
Source can be obtained, and not only greatly simplify technological process, and mild, at low cost, the required equipment of preparation condition is simple, production safety
Property is strong, it is easy to accomplish industrialized production.Prepared solar cell photoelectric pole barrier layer can effectively obstruct conductive substrates with
Electrolyte is in direct contact, and reduces the generation of dark current, improves the photoelectric conversion efficiency of solar cell.
The above, only presently preferred embodiments of the present invention, are not intended to limit the present invention in any form；It is all to be familiar with
One of ordinary skill in the art can by specification attached drawing and described above and swimmingly implement the present invention；But it is all familiar
Professional and technical personnel without departing from the scope of the present invention, is made using disclosed above technology contents
A little change, modification and the equivalent variations developed, are the equivalent embodiment of the present invention；Meanwhile all implementation according to the present invention
Technology belongs to technical scheme of the present invention to the variation, modification and evolution etc. of any equivalent variations made by above example
Protection domain within.
Claims (4)
1. the object of the present invention is to provide a kind of hydrophobic method of modifying of raising perovskite thin film.It is characterized in that will prepare
Perovskite thin film is placed in certain density fluoro fatty amines organic solution and volatilizees in the closed atmosphere to be formed, and passes through fluoro fat
The interaction on amido and perovskite surface on fat amine organic matter and the perovskite thin film for obtaining hydrophobic modification.The method of modifying
Preparation include following steps：
Step 1：Perovskite precursor solution is spin-coated on the FTO electro-conductive glass after over cleaning and plasma treatment, annealing
Processing obtains perovskite thin film, is cooled to room temperature；
Step 2：By the electro-conductive glass obtained with perovskite thin film and certain density fluoro fatty amines organic solution
It is collectively disposed in closed container, at a certain temperature suffocating treatment certain time, the perovskite thin film modified.
2. the hydrophobic method of modifying of raising perovskite thin film according to claim 1, wherein method of modifying are fluoro fat
The solution vapor fumigating system of fat amine organic matter.
3. the hydrophobic method of modifying of raising perovskite thin film according to claim 1, wherein fluoro fatty amines are organic
Object is 2,2,2- trifluoroethylamines, seven fluorine butylamine of 2,2,3,3,4,4,4- and 1H, 1H- perfluoro capryl amine.
4. the hydrophobic method of modifying of raising perovskite thin film according to claim 1, wherein fluoro fatty amines are organic
Solution concentration is 1-4vol%, and fumigation temperature is 0-60 degrees Celsius, and fumigation time is 0-3 hours.
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| CN110676390A (en) * | 2019-09-05 | 2020-01-10 | 厦门大学 | Perovskite surface modification method and application thereof |
| CN111138659A (en) * | 2020-01-14 | 2020-05-12 | 四川大学 | Method for preparing triblock nonionic fluorine-containing short-chain surfactant by non-isocyanate route |
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| CN111138659A (en) * | 2020-01-14 | 2020-05-12 | 四川大学 | Method for preparing triblock nonionic fluorine-containing short-chain surfactant by non-isocyanate route |
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